Characterization of nitrided SiC(1 00) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy (English)
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In:
Materials Science in Semiconductor Processing
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175
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2024
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Characterization of nitrided SiC(1 00) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy
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Contributors:Kobayashi, Takuma ( author ) / Suzuki, Asato ( author ) / Nakanuma, Takato ( author ) / Sometani, Mitsuru ( author ) / Okamoto, Mitsuo ( author ) / Yoshigoe, Akitaka ( author ) / Shimura, Takayoshi ( author ) / Watanabe, Heiji ( author )
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Published in:
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Publisher:
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Publication date:2024-02-15
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 175
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