Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors (English)
- New search for: Yonenaga, I.
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In:
Physica B: Condensed Matter
;
404
, 23-24
;
4999-5001
;
2009
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors
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Contributors:
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Published in:Physica B: Condensed Matter ; 404, 23-24 ; 4999-5001
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Publisher:
- New search for: Elsevier B.V.
-
Publication date:2009-01-01
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Size:3 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 404, Issue 23-24
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 4509
-
Non-equilibrium molecular-dynamics for impurities in semiconductors: Vibrational lifetimes and thermal conductivitiesEstreicher, S.K. / Gibbons, T.M. et al. | 2009
- 4515
-
Trends on 3d transition metal impurities in diamondAssali, L.V.C. / Machado, W.V.M. / Justo, J.F. et al. | 2009
- 4518
-
Detection and identification of nitrogen defects in nanodiamond as studied by EPRSoltamova, A.A. / Ilyin, I.V. / Baranov, P.G. / Vul’, A.Ya. / Kidalov, S.V. / Shakhov, F.M. / Mamin, G.V. / Orlinskii, S.B. / Silkin, N.I. / Salakhov, M.Kh. et al. | 2009
- 4522
-
Exchange coupled pairs of dangling bond spins as a new type of paramagnetic defects in nanodiamondsOsipov, V. Yu. / Shames, A.I. / Vul', A. Ya. et al. | 2009
- 4525
-
Boron–hydrogen complexes in diamond: Energy levels and metastable statesLombardi, E.B. et al. | 2009
- 4529
-
Experimental and theoretical study of the thermal solubility of the vacancy in germaniumVanhellemont, J. / Lauwaert, J. / Witecka, A. / Śpiewak, P. / Romandic, I. / Clauws, P. et al. | 2009
- 4533
-
Interstitial-related defect reactions in electron-irradiated oxygen-rich Ge crystals: A DLTS studyMarkevich, V.P. / Peaker, A.R. / Lastovskii, S.B. / Murin, L.I. / Litvinov, V.V. / Emtsev, V.V. / Dobaczewski, L. et al. | 2009
- 4537
-
Spin-Peierls transition in the Ge:As semiconductor impurity system in the vicinity of the insulator–metal phase transitionVeinger, A.I. / Zabrodskii, A.G. / Tisnek, T.V. / Goloshchapov, S.I. et al. | 2009
- 4540
-
Dislocation photoluminescence in plastically deformed germaniumShevchenko, S.A. / Tereshchenko, A.N. et al. | 2009
- 4543
-
Self-assembling conditions of 4C10Sn nanoclusters in Ge:(C, Sn)Elyukhin, V.A. / Rodriguez Peralta, P. / Mishurnyi, V.A. / de Anda, F. et al. | 2009
- 4546
-
Quantitative evaluation of germanium displacement induced by arsenic implantation using germanium isotope superlatticesKawamura, Yoko / Shimizu, Yasuo / Oshikawa, Hiroyuki / Uematsu, Masashi / Haller, Eugene E. / Itoh, Kohei M. et al. | 2009
- 4549
-
Comparative mid- and far-infrared spectroscopy of nitrogen–oxygen complexes in siliconAlt, H.Ch. / Wagner, H.E. et al. | 2009
- 4552
-
Photoluminescence from triplet states of isoelectronic bound excitons at interstitial carbon-intersititial oxygen defects in siliconIshikawa, T. / Koga, K. / Itahashi, T. / Vlasenko, L.S. / Itoh, K.M. et al. | 2009
- 4555
-
The photoluminescence of the thermo-treated siliconBolotov, Valeriy V. / Kan, Vasiliy E. et al. | 2009
- 4558
-
Formation of Frenkel pairs and diffusion of self-interstitial in Si under normal and hydrostatic pressure: Quantumchemical simulationGusakov, Vasilii / Belko, Victor / Dorozhkin, Nikolai et al. | 2009
- 4561
-
Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperaturesMakarenko, L.F. / Lastovski, S.B. / Korshunov, F.P. / Murin, L.I. / Moll, M. et al. | 2009
- 4565
-
Trivacancy in silicon: A combined DLTS and ab-initio modeling studyMarkevich, V.P. / Peaker, A.R. / Lastovskii, S.B. / Murin, L.I. / Coutinho, J. / Markevich, A.V. / Torres, V.J.B. / Briddon, P.R. / Dobaczewski, L. / Monakhov, E.V. et al. | 2009
- 4568
-
Trivacancy-oxygen complex in silicon: Local vibrational mode characterizationMurin, L.I. / Svensson, B.G. / Lindström, J.L. / Markevich, V.P. / Londos, C.A. et al. | 2009
- 4572
-
Formation of vacancy and oxygen containing complexes in Cz-Si by rapid thermal annealingAkhmetov, V. / Kissinger, G. / von Ammon, W. et al. | 2009
- 4576
-
DLTS study of the oxygen dimer formation kinetics in siliconYarykin, Nikolai / Weber, Jörg et al. | 2009
- 4579
-
Self-interstitials and related defects in irradiated siliconGorelkinskii, Yu.V. / Abdullin, Kh.A. / Mukashev, B.N. / Turmagambetov, T.S. et al. | 2009
- 4583
-
Electrically detected magnetic resonance of phosphorous due to spin dependent recombination with triplet centers in γ-irradiated siliconAkhtar, W. / Morishita, H. / Vlasenko, L.S. / Poloskin, D.S. / Itoh, K.M. et al. | 2009
- 4586
-
Electron spin resonance of palladium-related defect in siliconIshiyama, T. / Kimura, S. / Kamiura, Y. / Yamashita, Y. et al. | 2009
- 4590
-
Electron spin resonance of light holes in porous siliconGorelkinski, Yu.V. / Abdullin, Kh.A. / Kalykova, G.K. / Mukashev, B.N. / Olzhabay, A.T. / Turmagambetov, T.S. et al. | 2009
- 4593
-
High-resolution spectroscopy and time-resolved study of electroluminescence of Er-1 center in siliconKudryavtsev, K.E. / Shmagin, V.B. / Shengurov, D.V. / Krasilnik, Z.F. et al. | 2009
- 4597
-
The features of electro-optical memory effect for 1.54μm electroluminescence of an Er doped Si diodeAndreev, B.A. / Krasilnik, Z.F. / Kryzhkov, D.I. / Kudryavtsev, K.E. / Kuznetsov, V.P. et al. | 2009
- 4601
-
Band-to-band and direct optical excitation of Er in silicon: Comparison of kinetics, temperature dependence of erbium PLYablonskiy, A.N. / Krasilnikova, L.V. / Andreev, B.A. / Kryzhkov, D.I. / Kuznetsov, V.P. / Krasilnik, Z.F. et al. | 2009
- 4604
-
Energy state distributions at oxide–semiconductor interfaces investigated by Laplace DLTSDobaczewski, L. / Markevich, V.P. / Kruszewski, P. / Hawkins, I.D. / Peaker, A.R. et al. | 2009
- 4608
-
Dislocation luminescence and electrical properties of dislocation network produced by silicon direct wafer bondingBondarenko, Anton / Vyvenko, Oleg / Bazlov, Nikolay / Kononchuk, Oleg et al. | 2009
- 4612
-
Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growthTaishi, Toshinori / Hoshikawa, Keigo / Ohno, Yutaka / Yonenaga, Ichiro et al. | 2009
- 4616
-
Analysis of photoluminescence spectra for detection of stress-induced defects in silicon substrates after the polycrystalline diamond film depositionBagaev, Victor S. / Aminev, Denis F. / Galkina, Tatiana I. / Klokov, Andrey Yu. / Krivobok, Vladimir S. / Ralchenko, Victor G. et al. | 2009
- 4619
-
Grown-in defects in heavily phosphorus-doped Czochralski siliconZeng, Yuheng / Chen, Jiahe / Ma, Xiangyang / Zeng, Zhidan / Yang, Deren et al. | 2009
- 4622
-
Effects of group-V impurities on the elastic properties of siliconSanten, Nicole / Vianden, Reiner et al. | 2009
- 4626
-
X-ray diffraction on precipitates in Czochralski-grown siliconCaha, O. / Meduňa, M. et al. | 2009
- 4630
-
Defect structure of zinc doped silicon studied by X-ray diffuse scattering methodShcherbachev, Kirill D. / Privezentsev, Vladimir V. et al. | 2009
- 4634
-
TEM observations in Si: An attempt to link deformation microstructures and electrical activityEyidi, D. / Eremenko, V. / Demenet, J.L. / Rabier, J. et al. | 2009
- 4637
-
Homogenization of CZ Si wafers by Tabula Rasa annealingMeduňa, M. / Caha, O. / Kuběna, J. / Kuběna, A. / Buršík, J. et al. | 2009
- 4641
-
Boron non-uniform precipitation in Si at the Ostwald ripening stageFeklistov, Konstantin / Fedina, Ludmila I. et al. | 2009
- 4645
-
Iron–oxygen interaction in silicon: A combined XBIC/XRF-EBIC-DLTS study of precipitation and complex buildingTrushin, M. / Vyvenko, O. / Seifert, W. / Jia, G. / Kittler, M. et al. | 2009
- 4649
-
Improved AMOLED with aligned poly-Si thin-film transistors by laser annealing and chemical solution treatmentsWu, G.M. / Chen, C.N. / Feng, W.S. / Lu, H.C. et al. | 2009
- 4653
-
Silicon nanoclusters formation in silicon dioxide by high power density electron beamKolesnikova, E.V. / Zamoryanskaya, M.V. et al. | 2009
- 4657
-
Some features of a microdefect revealing in single-crystal silicon by the preferential etching techniqueUsenka, Alexandra E. / Yukhnevich, Anatolii V. et al. | 2009
- 4661
-
Raman lasers due to scattering on donor electronic resonances in siliconPavlov, Sergey G. / Büttger, Ute / Abrosimov, Nikolay V. / Riemann, Helge / Shastin, Valery / Redlich, Britta / van der Meer, Alexander F.G. / Hübers, Heinz-Wilhelm et al. | 2009
- 4664
-
Influence of irradiation by neutrons on the properties of p+–n–n+ Si radiation detectorsKalendra, Vidmantas / Kažukauskas, Vaidotas / Vainorius, Neimantas / Vaitkus, Juozas V. et al. | 2009
- 4667
-
Kinetics of reverse resistance recovery of silicon diodes: The role of the distance the metallurgical p+n-junction-defect layer formed by 250MeV krypton implantationPoklonski, N.A. / Gorbachuk, N.I. / Shpakovski, S.V. / Filipenia, V.A. / Skuratov, V.A. / Wieck, A. et al. | 2009
- 4671
-
Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substratesOhyama, H. / Rafí, J.M. / Campabadal, F. / Takakura, K. / Simoen, E. / Chen, J. / Vanhellemont, J. et al. | 2009
- 4674
-
Effects of irradiation induced lattice defects on standard trench and fine pattern trench IGBT characteristicsNakabayashi, M. / Ohyama, H. / Kaneko, T. / Hanano, K. / Rafi, J.M. / Simoen, E. / Claeys, C. et al. | 2009
- 4678
-
Iron diffusion in silicon under external stressSuzuki, K. / Yoshida, Y. / Kamimura, T. / Ichino, M. / Asahi, K. et al. | 2009
- 4681
-
An application of gold diffusion for defect investigation in siliconFeklisova, O.V. / Yakimov, E.B. et al. | 2009
- 4685
-
Control of impurity diffusion in silicon by IR laser excitationShirai, K. / Matsukawa, K. / Moriwaki, T. / Ikemoto, Y. et al. | 2009
- 4689
-
Strange lifetimes of the vibrations of interstitial oxygen in SiGe alloysKohli, K.K. / Vinh, N.Q. / Clauws, P. / Davies, G. et al. | 2009
- 4693
-
Effects of germanium doping on the behavior of oxygen and carbon impurities and impurity-related complexes in SiLondos, C.A. / Andrianakis, A. / Emtsev, V.V. / Oganesyan, G.A. / Ohyama, H. et al. | 2009
- 4698
-
Oxygen diffusion in Si1− xGex alloysKhirunenko, L.I. / Pomozov, Yu.V. / Sosnin, M.G. / Duvanskii, A.V. / Sobolev, N.A. / Abrosimov, N.V. / Riemann, H. et al. | 2009
- 4701
-
Morphological properties of laser irradiated Si/Ge multilayersGaiduk, P.I. / Prakopyeu, S.L. / Lundsgaard Hansen, J. / Nylandsted Larsen, A. et al. | 2009
- 4705
-
Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperaturesFeklisova, O.V. / Yakimov, E.B. / Arapkina, L.V. / Chapnin, V.A. / Chizh, K.V. / Kalinushkin, V.P. / Yuryev, V.A. et al. | 2009
- 4708
-
Laser-induced melting and recrystallization of CVD grown polycrystalline Si/SiGe/Ge layersGaiduk, P.I. / Prakopyeu, S.L. / Zajkov, V.A. / Ivlev, G.D. / Gatskevich, E.I. et al. | 2009
- 4712
-
Stress-induced nanoislands nucleation during growth of Ge/Si heterostructures under low-energy ion irradiationSmagina, J.V. / Novikov, P.L. / Armbrister, V.A. / Zinoviev, V.A. / Nenashev, A.V. / Dvurechenskii, A.V. et al. | 2009
- 4716
-
Quantum cascade laser design based on impurity–band transitions of donors in Si/GeSi(111) heterostructuresBekin, N.A. / Pavlov, S.G. et al. | 2009
- 4719
-
Defects of Ge quantum dot arrays on the Si(001) surfaceYuryev, V.A. / Arapkina, L.V. et al. | 2009
- 4723
-
Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formationRafí, J.M. / Vanhellemont, J. / Simoen, E. / Chen, J. / Zabala, M. / Campabadal, F. et al. | 2009
- 4727
-
Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiCMarinova, Maya / Zoulis, Georgios / Robert, Teddy / Mercier, Frederic / Mantzari, Alkioni / Galben, Irina / Kim-Hak, Olivier / Lorenzzi, Jean / Juillaguet, Sandrine / Chaussende, Didier et al. | 2009
- 4731
-
Microstructural and magnetic study of Fe-implanted 6H-SiCDupeyrat, C. / Declémy, A. / Drouet, M. / Eyidi, D. / Thomé, L. / Debelle, A. / Viret, M. / Ott, F. et al. | 2009
- 4735
-
EPR, ESE and pulsed ENDOR study of the nitrogen donor pairs on quasi-cubic lattice sites in 6H SiCSavchenko, D.V. / Kalabukhova, E.N. / Lukin, S.N. / Mokhov, E.N. / Hoentsch, J. / Pöppl, A. et al. | 2009
- 4739
-
A new spin one defect in cubic SiCBratus’, V.Ya. / Melnik, R.S. / Okulov, S.M. / Rodionov, V.N. / Shanina, B.D. / Smoliy, M.I. et al. | 2009
- 4742
-
Vacancy clusters created via room temperature irradiation in 6H-SiCScholle, A. / Greulich-Weber, S. / Rauls, E. / Schmidt, W.G. / Gerstmann, U. et al. | 2009
- 4745
-
Characterization of major in-grown stacking faults in 4H-SiC epilayersFeng, Gan / Suda, Jun / Kimoto, Tsunenobu et al. | 2009
- 4749
-
A TEM study of in-grown stacking faults in 3C-SiC layers grown by CF-PVT on 4H-SiC substratesMarinova, Maya / Mercier, Frederic / Mantzari, Alkioni / Galben, Irina / Chaussende, Didier / Polychroniadis, Efstathios K. et al. | 2009
- 4752
-
Charge carrier removal rates in n-type silicon and silicon carbide subjected to electron and proton irradiationKozlovski, V.V. / Emtsev, V.V. / Ivanov, A.M. / Lebedev, A.A. / Oganesyan, G.A. / Poloskin, D.S. / Strokan, N.B. et al. | 2009
- 4755
-
Mechanisms of changes of hole concentration in Al-doped 6H-SiC by electron irradiation and annealingMatsuura, Hideharu / Yanagisawa, Hideki / Nishino, Kozo / Myojin, Yoshiko / Nojiri, Takunori / Matsuyama, Yukei / Ohshima, Takeshi et al. | 2009
- 4758
-
Influence of the defect density (twins boundaries) on electrical parameters of 3C-SiC epitaxial filmsLebedev, Alexander A. / Abramov, Pavel L. / Lebedev, Sergey P. / Oganesyan, Gagik A. / Tregubova, Alla S. / Shamshur, Dmitrii V. et al. | 2009
- 4761
-
Far-action radiation defects and gettering effects in 6H-SiC irradiated with Bi ionsShustov, D. / Kalinin, V. / Kalinina, E. / Zamoryanskaya, M. et al. | 2009
- 4764
-
Diffusion Al from implanted SiC layerAleksandrov, O.V. / Kalinina, E.V. et al. | 2009
- 4768
-
Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formationBrillson, L.J. / Dong, Y. / Doutt, D. / Look, D.C. / Fang, Z.-Q. et al. | 2009
- 4774
-
Point defects in ZnO: Electron paramagnetic resonance studyVlasenko, Leonid S. et al. | 2009
- 4779
-
Dynamical nuclear polarization by means of shallow donors in ZnO quantum dotsBaranov, Pavel G. / Orlinskii, Sergei B. / de Mello Donega, Celso / Meijerink, Andries / Blok, Hubert / Schmidt, Jan et al. | 2009
- 4783
-
Spin-dependent recombination of defects in bulk ZnO crystals and ZnO nanocrystals as studied by optically detected magnetic resonanceRomanov, N.G. / Tolmachev, D.O. / Badalyan, A.G. / Babunts, R.A. / Baranov, P.G. / Dyakonov, V.V. et al. | 2009
- 4787
-
Persistent photoconductivity of ZnOLaiho, R. / Stepanov, Yu.P. / Vlasenko, M.P. / Vlasenko, L.S. et al. | 2009
- 4791
-
Ab initio study of the magnetic interaction of Co and Ni doped ZnO with intrinsic vacanciesDebernardi, Alberto / Fanciulli, Marco et al. | 2009
- 4794
-
Electronic structure of oxygen vacancy in crystalline InGaO3(ZnO)mLee, W.-J. / Ryu, B. / Chang, K.J. et al. | 2009
- 4797
-
Li-related defects in ZnO: Hybrid functional calculationsCarvalho, A. / Alkauskas, A. / Pasquarello, Alfredo / Tagantsev, A.K. / Setter, N. et al. | 2009
- 4800
-
On the oxygen vacancy in Co-doped ZnO thin filmsSeghier, D. / Gislason, H.P. et al. | 2009
- 4803
-
Lattice location of the group V elements As and Sb in ZnOWahl, U. / Correia, J.G. / Decoster, S. / Mendonça, T. et al. | 2009
- 4807
-
On diffusion of Cu in ZnOHerklotz, F. / Lavrov, E.V. / Weber, J. et al. | 2009
- 4810
-
Nitrogen and hydrogen in bulk single-crystal ZnOJokela, S.J. / Tarun, M.C. / McCluskey, M.D. et al. | 2009
- 4813
-
On quantum efficiency of photoluminescence in ZnO layers and nanostructuresReshchikov, M.A. / El-Shaer, A. / Behrends, A. / Bakin, A. / Waag, A. et al. | 2009
- 4816
-
The structure, photoluminescence, optical and magnetic properties of ZnO films doped with ferromagnetic impuritiesGritskova, E.V. / Mukhamedshina, D.M. / Mit’, K.A. / Dolya, N.A. / Abdullin, Kh.A. et al. | 2009
- 4820
-
Temperature and dose dependence of defect complex formation with ion implanted Mn/Fe in ZnOMølholt, T.E. / Mantovan, R. / Gunnlaugsson, H.P. / Bharuth-Ram, K. / Fanciulli, M. / Gíslason, H.P. / Johnston, K. / Kobayashi, Y. / Langouche, G. / Masenda, H. et al. | 2009
- 4823
-
The electronic properties of the interface structure between ZnO and amorphous HfO2Ryu, Byungki / Chang, K.J. et al. | 2009
- 4827
-
ZnO nanocrystals/SiO2 multilayer structures fabricated by RF-magnetron sputteringPankratov, V. / Osinniy, V. / Nylandsted Larsen, A. / Bech Nielsen, B. et al. | 2009
- 4831
-
Physical properties of copper oxide thin films prepared by dc reactive magnetron sputtering under different oxygen partial pressuresChu, Chun-Lung / Lu, Hsin-Chun / Lo, Chen-Yang / Lai, Chi-You / Wang, Yu-Hsiang et al. | 2009
- 4835
-
Influence of the thermal annealing temperature of the channel layers grown at room temperature on the device performance in the ZnO thin-film-transistorsAhn, Cheol Hyoun / Seo, Dong Kyu / Woo, Chang Ho / Cho, Hyung Koun et al. | 2009
- 4839
-
Photosensitivity of ZnO/CuIn3Se5 heterostructures at γ-radiationEmtsev, V.V. / Nikolaev, Yu.A. / Poloskin, D.S. / Terukov, E.I. / Bodnar’, I.V. / Rud’, V.Yu. / Rud’, Yu.V. et al. | 2009
- 4842
-
Electron and molecular processes on the surface of wide-bandgap oxides induced by photoexcitation of point defectsLisachenko, A.A. et al. | 2009
- 4846
-
Fabrication of low-resistive p-type Al–N co-doped zinc oxide thin films by RF reactive magnetron sputteringLu, Hsin-Chun / Lu, Jo-Ling / Lai, Chi-You / Wu, Gwo-Mei et al. | 2009
- 4850
-
Intrinsic and defect-related luminescence of NiOMochizuki, Shosuke / Saito, Takashi et al. | 2009
- 4854
-
Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurementsTakakura, K. / Koga, D. / Ohyama, H. / Rafi, J.M. / Kayamoto, Y. / Shibuya, M. / Yamamoto, H. / Vanhellemont, J. et al. | 2009
- 4858
-
Photo-induced spectral change in CeO2 and CeO2-based solid solution at room temperatureMochizuki, Shosuke / Fujishiro, Fumito / Kano, Satoshi et al. | 2009
- 4862
-
Electrical and electrothermal transport in InN: The roles of defectsMiller, N. / Ager, J.W. III / Jones, R.E. / Smith, H.M. III / Mayer, M.A. / Yu, K.M. / Hawkridge, M.E. / Liliental-Weber, Z. / Haller, E.E. / Walukiewicz, W. et al. | 2009
- 4866
-
Stable In-defect complexes in GaN and AlNSchmitz, J. / Niederhausen, J. / Penner, J. / Lorenz, K. / Alves, E. / Vianden, R. et al. | 2009
- 4870
-
Electrical properties and deep traps spectra in AlGaN films with nitrogen and gallium polarities prepared by molecular beam epitaxyProtasov, D.Yu. / Tereshchenko, O.E. / Zhuravlev, K.S. / Polyakov, A.Y. / Smirnov, N.B. / Govorkov, A.V. et al. | 2009
- 4873
-
Defects in AlN: High-frequency EPR and ENDOR studiesOrlinskii, Sergei B. / Baranov, Pavel G. / Bundakova, Anna P. / Bickermann, Matthias / Schmidt, Jan et al. | 2009
- 4877
-
Deep levels investigation of AlGaN/GaN heterostructure transistorsChikhaoui, W. / Bluet, J.M. / Girard, P. / Bremond, G. / Bru-Chevallier, C. / Dua, C. / Aubry, R. et al. | 2009
- 4880
-
Optical quenching of photoconductivity in AlxGa1− xN epilayersSeghier, D. / Gislason, H.P. et al. | 2009
- 4882
-
Alloy and lattice disorder in Hf implantedGeruschke, Thomas / Lorenz, Katharina / Vianden, Reiner et al. | 2009
- 4882
-
Alloy and lattice disorder in Hf implanted Formula Not ShownGeruschke, T. / Lorenz, K. / Vianden, R. et al. | 2009
- 4886
-
Atomic structure of threading dislocations in AlN thin filmsTokumoto, Yuki / Shibata, Naoya / Mizoguhci, Teruyasu / Yamamoto, Takahisa / Ikuhara, Yuichi et al. | 2009
- 4889
-
Deep level transient spectroscopy signatures of majority traps in GaN p–n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substratesPŁaczek-Popko, E. / Trzmiel, J. / Zielony, E. / Grzanka, S. / Czernecki, R. / Suski, T. et al. | 2009
- 4892
-
Role of the surface in the electrical and optical properties of GaNFoussekis, M. / Ferguson, J.D. / Baski, A.A. / Morkoç, H. / Reshchikov, M.A. et al. | 2009
- 4896
-
Two channels of non-radiative recombination in InGaN/GaN LEDsAverkiev, N.S. / Chernyakov, A.E. / Levinshtein, M.E. / Petrov, P.V. / Yakimov, E.B. / Shmidt, N.M. / Shabunina, E.I. et al. | 2009
- 4899
-
Depth profile of donor–acceptor pair transition revealing its effect on the efficiency of green LEDsXia, Yong / Li, Yufeng / Detchprohm, Theeradetch / Wetzel, Christian et al. | 2009
- 4903
-
Defect-related photoluminescence in Mg-doped GaN nanostructuresReshchikov, M.A. / Shahedipour-Sandvik, F. / Messer, B.J. / Jindal, V. / Tripathi, N. / Tungare, M. et al. | 2009
- 4907
-
Deep-level transient spectroscopy studies of light-emitting diodes based on multiple-quantum-well InGaN/GaN structureSobolev, Mikhail M. / Shmidt, Natalia M. et al. | 2009
- 4911
-
An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPETörmä, P.T. / Ali, M. / Svensk, O. / Sintonen, S. / Kostamo, P. / Suihkonen, S. / Sopanen, M. / Lipsanen, H. / Odnoblyudov, M.A. / Bougrov, V.E. et al. | 2009
- 4916
-
EBIC investigations of defect distribution in ELOG GaN filmsYakimov, E.B. / Vergeles, P.S. / Govorkov, A.V. / Polyakov, A.Y. / Smirnov, N.B. / Lee, In-Hwan / Lee, Cheul Ro / Pearton, S.J. et al. | 2009
- 4919
-
The influence of sapphire substrate orientation on crystalline quality of GaN films grown by hydride vapor phase epitaxyGovorkov, Anatolij / Donskov, Alexsandr / Diakonov, Lev / Kozlova, Yulia / Malahov, Sergej / Markov, Alexsandr / Mezhennyi, Mikhail / Pavlov, Vladimir / Polykov, Alexsandr / Yugova, Tatiana et al. | 2009
- 4922
-
Characterization of defects in undoped non c-plane and high resistance GaN layers dominated by stacking faultsWitte, H. / Guenther, K.-M. / Wieneke, M. / Blaesing, J. / Dadgar, A. / Krost, A. et al. | 2009
- 4925
-
Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40Mev iodine ion irradiationAli, M. / Svensk, O. / Zhen, Z. / Suihkonen, S. / Törmä, P.T. / Lipsanen, H. / Sopanen, M. / Hjort, K. / Jensen, J. et al. | 2009
- 4929
-
Hanle effect and spin-dependent recombination at deep centers in GaAsNKalevich, V.K. / Shiryaev, A.Yu. / Ivchenko, E.L. / Afanasiev, M.M. / Egorov, A.Yu. / Ustinov, V.M. / Masumoto, Y. et al. | 2009
- 4933
-
Imaging minority carrier diffusion in GaN nanowires using near field optical microscopyBaird, Lee / Ang, G.H. / Low, C.H. / Haegel, N.M. / Talin, A.A. / Li, Qiming / Wang, G.T. et al. | 2009
- 4937
-
Structural and electronic properties of carbon-doped c-BN(110) surfaceKökten, Hatice / Erkoç, Şakir et al. | 2009
- 4939
-
Deep centers in bulk AlN and their relation to low-angle dislocation boundariesPolyakov, A.Y. / Smirnov, N.B. / Govorkov, A.V. / Yugova, T.G. / Scherbatchev, K.D. / Avdeev, O.A. / Chemekova, T.Yu. / Mokhov, E.N. / Nagalyuk, S.S. / Helava, H. et al. | 2009
- 4942
-
EPR identification of intrinsic and transition metal-related defects in ZnGeP2 and other II–IV–V2 compoundsGehlhoff, W. / Hoffmann, A. et al. | 2009
- 4949
-
Shallow defects in Cu2ZnSnS4Hönes, K. / Zscherpel, E. / Scragg, J. / Siebentritt, S. et al. | 2009
- 4953
-
Structural peculiarities and photoluminescence of ZnGa2Se4 compoundTagiyev, B.G. / Tagiyev, O.B. / Kerimova, T.G. / Guseynov, G.G. / Asadullayeva, S.G. et al. | 2009
- 4956
-
Ruthenium related deep-level defects in n-type GaAsNaz, Nazir A. / Qurashi, Umar S. / Majid, A. / Zafar Iqbal, M. et al. | 2009
- 4959
-
Thermal annealing behavior of deep levels in Rh-doped n-type MOVPE GaAsNaz, Nazir A. / Qurashi, Umar S. / Zafar Iqbal, M. et al. | 2009
- 4963
-
Imaging charge transport and dislocation networks in ordered GaInPHaegel, Nancy M. / Williams, Scott E. / Frenzen, C. / Scandrett, C. et al. | 2009
- 4967
-
Deep level defects in proton irradiated p-type Al0.5Ga0.5AsSzatkowski, J. / Sierański, K. / Płaczek-Popko, E. / Gumienny, Z. et al. | 2009
- 4970
-
Structural study of low-temperature grown superlattices of GaAs with delta-layers of Sb and PBaidakova, M.V. / Bert, N.A. / Chaldyshev, V.V. / Nevedomsky, V.N. / Yagovkina, M.A. / Preobrazhenskii, V.V. / Putyato, M.A. / Semyagin, B.R. et al. | 2009
- 4974
-
Impurity photoconductivity in strained p-InGaAs/GaAsP heterostructuresAleshkin, V.Ya. / Antonov, A.V. / Kozlov, D.V. / Zvonkov, B.N. / Gavrilenko, V.I. et al. | 2009
- 4977
-
Thermal annealing behaviour of deep levels in as-grown p-type MOCVD GaAsNaz, Nazir A. / Qurashi, Umar S. / Zafar Iqbal, M. et al. | 2009
- 4981
-
Radiation-induced deep levels in n-type GaAs grown by metal-organic chemical-vapor depositionNaz, Nazir A. / Qurashi, Umar S. / Zafar Iqbal, M. et al. | 2009
- 4984
-
Structural distortions in nitrogen-doped GaP and GaAsParfenova, I.I. et al. | 2009
- 4988
-
Phase composition of microdefects in heavily doped n-GaAsDavletkildeev, N.A. / Nukenov, M.M. / Sologub, N.V. et al. | 2009
- 4992
-
Self-assembling of isoelectronic impurity nanoclusters in III–V semiconductorsElyukhin, V.A. et al. | 2009
- 4995
-
Surface and bulk passivation of A3B5 layers by isovalent dopant diffusion from a localized sourceKarlina, L.B. / Vlasov, A.S. / Rakova, E.P. / Ber, B.Y. / Kazanthev, D.Yu. / Andreev, V.M. et al. | 2009
- 4999
-
Recent knowledge of strength and dislocation mobility in wide band-gap semiconductorsYonenaga, I. / Ohno, Y. / Taishi, T. / Tokumoto, Y. et al. | 2009
- 5002
-
Native point defects in ZnS filmsKurbatov, D. / Kosyak, V. / Opanasyuk, A. / Melnik, V. et al. | 2009
- 5006
-
High temperature antistructure disorder in undoped ZnSLott, K. / Shinkarenko, S. / Türn, L. / Nirk, T. / Öpik, A. / Kallavus, U. / Gorokhova, E. / Grebennik, A. / Vishnjakov, A. et al. | 2009
- 5009
-
Formation of nonuniformity in ZnSe/ZnMgSSe quantum well structures during MOVPE on GaAs(001) misoriented by 10° to (111)A planeKozlovsky, V.I. / Martovitsky, V.P. et al. | 2009
- 5013
-
Low-threshold up-conversion luminescence in ZnxCd1− xS with oxidized surfaceSmirnov, Mikhail S. / Ovchinnikov, Oleg V. / Kosyakova, Ekaterina A. / Latyshev, Anatoly N. / Klinskikh, Alexander F. / Tat’yanina, Elena P. / Novikov, Pavel V. / Hai, Mien et al. | 2009
- 5016
-
ZnSe based films characterization by cathodoluminescenceShakhmin, Alexey A. / Sedova, Irina V. / Sorokin, Sergey V. / Fitting, Hans-Joachim / Zamoryanskaya, Maria V. et al. | 2009
- 5019
-
Intrinsic defects in CdTe and CdZnTe alloysCarvalho, A. / Tagantsev, A. / Öberg, S. / Briddon, P.R. / Setter, N. et al. | 2009
- 5022
-
Charge carrier scattering on the short-range potential of the crystal lattice defects in ZnCdTe, ZnHgSe and ZnHgTeMalyk, Orest P. et al. | 2009
- 5025
-
Long-term room-temperature relaxation of the defects induced in (Hg,Cd)Te by low-energy ionsIzhnin, I.I. / Mynbaev, K.D. / Pociask, M. / Mudryy, R.Ya. / Voitsekhovskii, A.V. / Talipov, N.Kh. et al. | 2009
- 5028
-
Shallow traps and the space-charged-induced limitation of the injection current in PbSnTe:In narrow-gap ferroelectricKlimov, Alexander E. / Shumsky, Vladimir N. et al. | 2009
- 5032
-
XAFS studies of nickel-doped lead tellurideRadisavljević, Ivana / Novaković, Nikola / Ivanović, Nenad / Romčević, Nebojša / Manasijević, Miodrag / Mahnke, Heinz-Eberhard et al. | 2009
- 5035
-
Study of alloy disorder in (Hg,Cd)Te with the use of infrared photoluminescenceIvanov-Omskii, V.I. / Bazhenov, N.L. / Mynbaev, K.D. / Smirnov, V.A. / Varavin, V.S. / Mikhailov, N.N. / Sidorov, G.Yu. et al. | 2009
- 5038
-
Hall and thermoelectric evaluation of p-type InAsWagener, M.C. / Wagener, V. / Botha, J.R. et al. | 2009
- 5042
-
Local cathodoluminescence study of defects in semiconductors and multilayer structuresZamoryanskaya, M.V. / Domracheva, Ya.V. / Shakhmin, A.A. / Shustov, D.B. / Trofimov, A.N. / Konnikov, S.G. et al. | 2009
- 5045
-
Microscopic observation of vacancy and self-interstitial and the formation of Frenkel pairs in InSb by Mössbauer spectroscopySielemann, R. / Govindaraj, R. / Müller, M. / Wende, L. / Weyer, G. et al. | 2009
- 5050
-
Isotopic fingerprints of gold-containing luminescence centers in 28SiSteger, M. / Yang, A. / Sekiguchi, T. / Saeedi, K. / Thewalt, M.L.W. / Henry, M.O. / Johnston, K. / Riemann, H. / Abrosimov, N.V. / Churbanov, M.F. et al. | 2009
- 5054
-
Dynamic nuclear polarization of 29Si via spin S=1 centers in isotopically controlled siliconItahashi, T. / Hayashi, H. / Itoh, K.M. / Poloskin, D.S. / Vlasenko, L.S. / Vlasenko, M.P. et al. | 2009
- 5057
-
Isotopic effects in photoconductivity spectrum of impurities in siliconAndreev, Boris A. / Ezhevskii, Alexander A. / Sennikov, Petr G. / Abrosimov, Nikolai V. / Pohl, Hans-Joachim et al. | 2009
- 5060
-
Electron paramagnetic resonance and dynamic nuclear polarization of 29Si nuclei in lithium-doped siliconRahman, M.R. / Vlasenko, L.S. / Haller, E.E. / Itoh, K.M. et al. | 2009
- 5063
-
Electron paramagnetic resonance spectroscopy of lithium donors in monoisotopic siliconEzhevskii, Alexandr A. / Soukhorukov, Andrey V. / Guseinov, Davud V. / Gusev, Anatoly V. et al. | 2009
- 5066
-
IR characterization of hydrogen in crystalline silicon solar cellsStavola, M. / Kleekajai, S. / Wen, L. / Peng, C. / Yelundur, V. / Rohatgi, A. / Carnel, L. / Kalejs, J. et al. | 2009
- 5071
-
Bistable character of a deep level in polycrystalline Si substrate for solar cellYamashita, Y. / Ochi, M. / Yoshinaga, H. / Kamiura, Y. / Ishiyama, T. et al. | 2009
- 5075
-
Hydrogen in ZnOLavrov, E.V. et al. | 2009
- 5080
-
Donor level of interstitial hydrogen in semiconductors: Deep level transient spectroscopyKolkovsky, Vl. / Dobaczewski, L. / Nielsen, K. Bonde / Kolkovsky, V. / Larsen, A. Nylandsted / Weber, J. et al. | 2009
- 5085
-
Raman scattering on Formula Not Shown in platelets in siliconLavrov, E. V. / Hiller, M. / Weber, J. et al. | 2009
- 5085
-
Raman scattering on in platelets in siliconLavrov, E.V. / Hiller, M. / Weber, J. et al. | 2009
- 5089
-
Isotope study of far IR absorption of bistable centers in hydrogen-implanted siliconIsova, Ainur T. / Klimenov, Vasiliy V. / Nevmerzhitsky, Ivan S. / Zakharov, Mikhail A. / Yeleuov, Mukhtar A. / Tokmoldin, Serekbol Z. et al. | 2009
- 5093
-
Minority-carrier-enhanced dissociation of the boron–hydrogen pair in siliconYarykin, Nikolai et al. | 2009
- 5096
-
One more deep level related to the metastable hydrogen-related defects in n-GaAs epilayersSoltanovich, O.A. / Yakimov, E.B. / Erofeev, E.V. / Kagadei, V.A. / Weber, J. et al. | 2009
- 5099
-
Hydrogen ion drift in Sb-doped Ge Schottky diodesBollmann, J. / Endler, R. / Dung, Vo Tien / Weber, J. et al. | 2009
- 5102
-
Thermally induced defect photoluminescence in hydrogenated amorphous silicon upon intense interband pumpingGusev, O. / Terukov, E. / Tsendin, K. / Undalov, Yu. / Minissale, S. / Gregorkiewicz, T. et al. | 2009
- 5106
-
Defect-level pinning and shallow states of the muonium isotope of hydrogenLichti, R.L. / Chow, K.H. / Cox, S.F.J. et al. | 2009
- 5110
-
Muonium as a probe of electron spin polarisation in CdTeAlberto, H.V. / Weidinger, A. / Vilão, Rui / Piroto Duarte, J. / Gil, J.M. / Ayres de Campos, N. / Lord, J.S. / Cox, S.F.J. et al. | 2009
- 5113
-
Evidence for a shallow muonium acceptor state in Ge-rich Formula Not ShownCarroll, B. R. / Lichti, R. L. / Celebi, Y. G. / Chow, K. H. / King, P. J. / Yonenaga, I. et al. | 2009
- 5113
-
Evidence for a shallow muonium acceptor state in Ge-richCarroll, B.R. / Lichti, R.L. / Celebi, Y.G. / Chow, K.H. / King, P.J.C. / Yonenaga, I. et al. | 2009
- 5117
-
Muonium in 4H silicon carbideCelebi, Y.G. / Lichti, R.L. / Carroll, B.R. / King, P.J.C. / Cox, S.F.J. et al. | 2009
- 5121
-
Hyperfine spectroscopy and characterization of muonium in ZnGeP2Mengyan, P.W. / Baker, B.B. / Lichti, R.L. / Chow, K.H. / Celebi, Y.G. / Zawilski, K.T. / Schunemann, P.G. et al. | 2009
- 5125
-
Positron states and annihilation in nanometric semiconducting superlatticesSekkal, Nadir / Arutyunov, N.Yu. et al. | 2009
- 5128
-
Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi: Changes in atomic structures of defects due to n→p conversionArutyunov, N.Yu. / Emtsev, V.V. et al. | 2009
- 5132
-
Optical properties of Si/Si:Er multi-nanolayer structures grown by SMBE methodNgoc Ha, Ngo / Krasil’nik, Z.F. / Gregorkiewicz, T. et al. | 2009
- 5136
-
Low temperature transport spectroscopy of defects using Schottky-barrier MOSFETsCalvet, L.E. / Meshkov, G.A. / Strupiechonski, E. / Toubestani, D. / Snyder, J.P. / Fortuna, F. / Wernsdorfer, W. et al. | 2009
- 5140
-
EDEPR of impurity centers embedded in silicon microcavitiesBagraev, N.T. / Gehlhoff, W. / Gets, D.S. / Klyachkin, L.E. / Kudryavtsev, A.A. / Malyarenko, A.M. / Mashkov, V.A. / Romanov, V.V. et al. | 2009
- 5144
-
Magnetic resonance spectroscopy of single centers in silicon quantum wellsBagraev, Nikolay T. / Klyachkin, Leonid E. / Kudryavtsev, Andrey A. / Malyarenko, Anna M. et al. | 2009
- 5148
-
Optical studies of Formula Not Shown -centers in GaAs/AlGaAs quantum wells. Energy structure of the isolated centers, and their collective behaviorPetrov, P. V. / Ivanov, Y. L. / Sedov, V. E. / Sablina, N. I. / Averkiev, N. S. et al. | 2009
- 5148
-
Optical studies of -centers in GaAs/AlGaAs quantum wells. Energy structure of the isolated centers, and their collective behaviorPetrov, P.V. / Ivanov, Yu.L. / Sedov, V.E. / Sablina, N.I. / Averkiev, N.S. et al. | 2009
- 5150
-
On the nature of defect states at interfaces of InAs/AlSb quantum wellsVasilyev, Yu. B. / Meltser, B. Ya. / Ivanov, S.V. / Kop’ev, P.S. et al. | 2009
- 5153
-
Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface propertiesKropman, D. / Mellikov, E. / Öpik, A. / Lott, K. / Volobueva, O. / Kärner, T. / Heinmaa, I. / Laas, T. / Medvid, A. et al. | 2009
- 5156
-
Point defects generated by oxidation of silicon crystal surfaceSuezawa, M. / Yamamoto, Y. / Suemitsu, M. / Yonenaga, I. et al. | 2009
- 5159
-
Simultaneous effects of pressure and temperature on donor binding energy in Pöschl–Teller quantum wellHakimyfard, Alireza / Barseghyan, M.G. / Duque, C.A. / Kirakosyan, A.A. et al. | 2009
- 5163
-
Hydrogenic donor impurity in parallel-triangular quantum wires: Hydrostatic pressure and applied electric field effectsRestrepo, R.L. / Giraldo, E. / Miranda, G.L. / Ospina, W. / Duque, C.A. et al. | 2009
- 5167
-
Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wellsWagener, Viera / Olivier, E.J. / Botha, J.R. et al. | 2009
- 5170
-
Relation between photocurrent and DLTS signals observed for quantum dot systemsKruszewski, P. / Dobaczewski, L. / Mesli, A. / Markevich, V.P. / Mitchell, C. / Missous, M. / Peaker, A.R. et al. | 2009
- 5173
-
Capacitance spectroscopy of CdTe self-assembled quantum dots embedded in ZnTe matrixPlaczek-Popko, E. / Zielony, E. / Trzmiel, J. / Szatkowski, J. / Gumienny, Z. / Wojtowicz, T. / Karczewski, G. / Kruszewski, P. / Dobaczewski, L. et al. | 2009
- 5177
-
Hydrogenic impurity binding energy in vertically coupled quantum-dots under hydrostatic pressure and applied electric fieldDuque, C.M. / Barseghyan, M.G. / Duque, C.A. et al. | 2009
- 5177
-
Hydrogenic impurity binding energy in vertically coupled Formula Not Shown quantum-dots under hydrostatic pressure and applied electric fieldDuque, C. M. / Barseghyan, M. G. / Duque, C. A. et al. | 2009
- 5181
-
Photoluminescence energy transitions in Formula Not Shown double quantum wells: Electric and magnetic fields and hydrostatic pressure effectsLó / pez, S. Y. / Mora-Ramos, M. E. / Duque, C. A. et al. | 2009
- 5181
-
Photoluminescence energy transitions in double quantum wells: Electric and magnetic fields and hydrostatic pressure effectsLópez, S.Y. / Mora-Ramos, M.E. / Duque, C.A. et al. | 2009
- 5185
-
Defects in nanothin crystalline layers and multilayer structures formed of themGoncharova, Olga et al. | 2009
- 5189
-
Influence of Ge nanocrystals and radiation defects on C–V characteristics in Si-MOS structuresLevy, Shai / Shlimak, Issai / Chelly, Avraham / Zalevsky, Zeev / Lu, Tiecheng et al. | 2009
- 5192
-
Effect of impurity potential range on a scaling behavior in the quantum Hall regimeArapov, Yu.G. / Harus, G.I. / Karskanov, I.V. / Neverov, V.N. / Shelushinina, N.G. / Yakunin, M.V. et al. | 2009
- 5196
-
Quantum-limit anisotropic magnetoresistance of semiconducting n-BiSb alloysRedko, N.A. / Kagan, V.D. / Volkov, M.P. et al. | 2009
- 5200
-
Doping and segregation of impurity atoms in silicon nanowiresFukata, N. / Seoka, M. / Saito, N. / Sato, K. / Chen, J. / Sekiguchi, T. / Murakami, K. et al. | 2009
- 5203
-
Lattice dislocation in Si nanowiresOmar, M.S. / Taha, H.T. et al. | 2009
- 5207
-
Computer simulation of some optical properties of one-dimensional photonic finite systems with defectsTimoshenko, Yu.K. / Smirnov, Yu.V. / Shunina, V.A. et al. | 2009
- 5207
-
Computer simulation of some optical properties of one-dimensional photonic finite systems Formula Not Shown with defectsTimoshenko, Y. K. / Smirnov, Y. V. / Shunina, V. A. et al. | 2009
- 5209
-
The investigation of the structural and electrophysical properties of carbon nanotubes with controlled dopant and defect compositionBolotov, Valeriy V. / Kan, Vasiliy E. / Roslikov, Vladislav E. / Ponomareva, Irina V. / Stenkin, Yuri A. / Davletkildeev, Nadim A. et al. | 2009
- 5212
-
Charge transfer through localized defect states with no change in on-site total spin and populationMashkov, V.A. et al. | 2009
- 5215
-
Influence of defects on charge and energy transfer in layered crystalsAbdullayev, N.A. / Kerimova, T.G. et al. | 2009
- 5218
-
Structural characterization and electro-physical properties for SiOC(–H) low-k dielectric filmsZakirov, A.S. / Khabibullaev, P.K. / Choi, Chi Kyu et al. | 2009
- 5221
-
Dependence of mobility on shallow localized gap states in single-crystal organic field-effect-transistorsButko, V.Y. / So, W. / Lang, D.V. / Chi, X. / Lashley, J.C. / Ramirez, A.P. et al. | 2009
- 5223
-
Peculiarities of the spectroscopic properties of γ-La2(1− x )Nd2 xS3 crystals caused by their structure imperfectionAbutalibov, G.I. / Mamedov, A.A. et al. | 2009
- 5227
-
Evidence of trapping levels and photoelectric properties of Cu3BiS3 thin filmsMesa, F. / Dussan, A. / Gordillo, G. et al. | 2009
- 5231
-
Relaxation spectrum of the TlSbSe2 thin filmsDeger, D. / Ulutas, K. / Yildirim, S. / Kalkan, N. et al. | 2009
- 5234
-
Structural distortions induced during stress relaxation affecting electrical transport of nanometer-thick La0.67(Ba,Ca)0.33MnO3 filmsSerenkov, I.T. / Sakharov, V.I. / Boikov, Yu. A. / Danilov, V.A. / Volkov, M.P. / Claeson, T. et al. | 2009
- 5237
-
First-principles material design and perspective on semiconductor spintronics materialsSato, K. / Fukushima, T. / Toyoda, M. / Kizaki, H. / Dinh, V.A. / Fujii, H. / Bergqvist, L. / Dederichs, P.H. / Katayama-Yoshida, H. et al. | 2009
- 5244
-
Characterization of II–VI: 3d crystals with the help of ultrasonic techniqueGudkov, V.V. / Lonchakov, A.T. / Zhevstovskikh, I.V. / Sokolov, V.I. / Korostelin, Yu.V. / Landman, A.I. / Surikov, V.T. et al. | 2009
- 5247
-
Magnetic impurity behavior in the type II broken-gap p-GaInAsSb/p-InAs:Mn heterostructures with 2D-semimetal channel at the interfaceMikhailova, Maya P. / Moiseev, Konstantin D. / Voronina, Tamara I. / Lagunova, Tamara S. / Parfeniev, Robert V. / Yakovlev, Yury P. et al. | 2009
- 5251
-
On the stretched-exponential decay kinetics of the ionized DX centers in gallium doped Cd1− xMnxTeTrzmiel, J. / Placzek-Popko, E. / Nowak, A. / Weron, K. / Gumienny, Z. et al. | 2009
- 5255
-
Electronic structure of diluted magnetic semiconductors Pb1− x − ySnxCryTeSkipetrov, E.P. / Pichugin, N.A. / Kovalev, B.B. / Slyn’ko, E.I. / Slyn’ko, V.E. et al. | 2009
- 5259
-
The impurities of iron and cobalt in mercury selenide: Localization effects of hybridized electronic states in the temperature dependences of thermoelectric powerLonchakov, A.T. / Okulov, V.I. / Konstantinov, V.L. / Okulova, K.A. / Paranchich, S.Yu. et al. | 2009
- 5262
-
Vanadium-induced deep impurity level in Pb1− xSnxTeSkipetrov, E.P. / Golovanov, A.N. / Zvereva, E.A. / Slyn’ko, E.I. / Slyn’ko, V.E. et al. | 2009
- 5266
-
Optical and magneto-optical properties of thin Zn1− xMnxO films doped by nitrogenPelenovich, V.O. / Yuldashev, Sh.U. / Zakirov, A.S. / Khabibullaev, P.K. / Nusretov, R.A. / Sokolov, V.Yu. et al. | 2009
- IFC
-
Editorial Board| 2009
- iii
-
Proceedings of the 25th International Conference on Defects in Semiconductors| 2009
- iv
-
Manuscript received date| 2009
- v
-
Conference Organization| 2009
- vii
-
Contents| 2009
- xix
-
PrefaceBagraev, Nikolay T. / Emtsev, Vadim V. / Estreicher, Stefan K. et al. | 2009
- xx
-
Conference Photograph| 2009