Investigation of a single Ge dots layer and its evolution upon oxidation by spectroscopic ellipsometry (English)
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In:
Physica E: Low-Dimensional Systems and Nanostructures
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17
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549-551
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2002
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Investigation of a single Ge dots layer and its evolution upon oxidation by spectroscopic ellipsometry
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Contributors:
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Published in:Physica E: Low-Dimensional Systems and Nanostructures ; 17 ; 549-551
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Publisher:
- New search for: Elsevier Science B.V.
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Publication date:2002-01-01
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Size:3 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 17
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Homogeneous linewidth of self-assembled III–V quantum dots observed in single-dot photoluminescenceLeosson, K. / Birkedal, D. / Magnusdottir, I. / Langbein, W. / Hvam, J.M. et al. | 2002
- 7
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Decoherence and environment effects in single InGaAs quantum dotsKammerer, C / Voisin, C / Cassabois, G / Delalande, C / Roussignol, Ph / Reithmaier, J.P / Gérard, J.M et al. | 2002
- 11
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Non-perturbative treatment of quantum dots coupled to light and phononsVagov, A. / Axt, V.M. / Kuhn, T. et al. | 2002
- 15
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Two different types of ‘natural’ quantum dots in narrow GaAs/AlGaAs QWsSteffan, A.G / Phillips, R.T et al. | 2002
- 19
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Tuning the wetting layer in the InGaAs/AlGaAs quantum dotsGurioli, M / Testa, S / Altieri, P / Sanguinetti, S / Grilli, E / Guzzi, M / Trevisi, G / Frigeri, P / Franchi, S et al. | 2002
- 22
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Strong graded interface related exciton energy blueshift in InxGa1−xN/GaN quantum dotsCaetano, E.W.S / Mesquita, M.V / Freire, V.N / Farias, G.A et al. | 2002
- 24
-
Multivalley effect on electronic states in Si quantum dotsHada, Yoko / Eto, Mikio et al. | 2002
- 26
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Observation of excited (bi-)exciton and multi-exciton features in locally homogeneous quantum dotsde Groote, Frank P.J / van Lippen, Twan / Haverkort, Jos E.M / Nötzel, Richard / Wolter, Joachim H et al. | 2002
- 31
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Energy spectrum of negatively charged single quantum dot: trion and charged biexciton statesAkimov, I.A / Hundt, A / Flissikowski, T / Kratzert, P / Henneberger, F et al. | 2002
- 35
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Charged excitons in individual quantum dots: effects of vertical electric fields and optical pump powerUrbaszek, B / McGhee, E.J / Smith, J.M / Warburton, R.J / Karrai, K / Gerardot, B.D / Garcia, J.M / Petroff, P.M et al. | 2002
- 37
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Effects of charge accumulation on the photocurrent and photoluminescence characteristics of self-assembled InAs/GaAs quantum dotsMonte, A.F.G / Finley, J.J / Itskevitch, I / Skolnick, M.S / Mowbray, D.J / Hopkins, M et al. | 2002
- 40
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Electronic properties of quantum-dot moleculesJaskólski, W / Zieliński, M / Bryant, Garnett W et al. | 2002
- 42
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Energy level engineering in InAs quantum dot stacks embedded in AlAs/GaAs superlatticesRebohle, L / Schrey, F.F / Hofer, S / Strasser, G / Unterrainer, K et al. | 2002
- 46
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Vertical stacks of small InAs/GaAs self-assembled dots: resonant and non-resonant excitationMartı́nez-Pastor, J / Alén, B / Rudamas, C / Roussignol, Ph / Garcı́a, J.M / González, L et al. | 2002
- 50
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2D–3D transitions in the quantum Stark effect in self-assembled InAs/GaAs quantum dotsSheng, Weidong / Leburton, Jean-Pierre et al. | 2002
- 56
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Optical properties and carrier dynamics of InAs/InP(113)B quantum dots emitting between 1.3 and for laser applicationsMiska, P. / Even, J. / Paranthoen, C. / Dehaese, O. / Folliot, H. / Loualiche, S. / Senes, M. / Marie, X. et al. | 2002
- 56
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Optical properties and carrier dynamics of InAs-InP(113)B quantum dots emitting between 1.3 and 1.55(micro)m for laser applicationsMiska, P. et al. | 2003
- 56
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Optical properties and carrier dynamics of InAs/InP(113)B quantum dots emitting between 1.3 and 1.55mm for laser applicationsMiska, P. / Even, J. / Paranthoen, C. / Dehaese, O. / Folliot, H. / Loualiche, S. / Senes, M. / Marie, X. et al. | 2003
- 60
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Intraband spectroscopy of self-organized GaN/AlN quantum dotsHelman, Ana / Fossard, Frédéric / Tchernycheva, Maria / Moumanis, Khalid / Lusson, Alain / Julien, François / Damilano, Benjamin / Grandjean, Nicolas / Massies, Jean / Adelman, Christophe et al. | 2002
- 64
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Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wellsMorel, A / Lefebvre, P / Taliercio, T / Bretagnon, T / Gil, B / Grandjean, N / Damilano, B / Massies, J et al. | 2002
- 68
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Thermal escape of carriers out of CdTe/ZnMgTe nanostructuresTinjod, Frank / Kheng, Kuntheak / Bleuse, Joël / Mariette, Henri et al. | 2002
- 73
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Recombination energy changes due to shell-like defects in Si/SiO2 quantum dotsde Sousa, J.S / Leburton, J-P / Freire, V.N / da Silva, E.F Jr. et al. | 2002
- 77
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Carrier localization and excitonic transitions in quantum-dot quantum-well nanoheterostructuresPérez-Conde, J. / Bhattacharjee, A.K. et al. | 2002
- 79
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Exciton luminescence of spherical GaAs nanocrystals studied by persistent hole-burning spectroscopyTaniguchi, K / Morishige, Y / Kanemitsu, Y et al. | 2002
- 82
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Intraband spectroscopy of self-organized InAs/InAlAs nanostructures grown onFossard, F. / Helman, A. / Julien, F.H. / Gendry, M. / Brault, J. / Péronne, E. / Alexandrou, A. / Schacham, S.E. / Finkman, E. et al. | 2002
- 84
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Electron–phonon interaction and intraband magneto-optical transitions in doped InAs/GaAs quantum dotsIsaia, J.N. / Hameau, S. / Deleporte, E. / Guldner, Y. / Verzelen, O. / Ferreira, R. / Bastard, G. / Zeman, J. / Gérard, J.M. et al. | 2002
- 86
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Far-infrared probe of size dispersion and population fluctuations in doped self-assembled quantum dotsIsaia, J.N. / de Vaulchier, L.A. / Hameau, S. / Ferreira, R. / Deleporte, E. / Guldner, Y. / Zeman, J. / Thierry-Mieg, V. et al. | 2002
- 89
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Self-assembled quantum dots: level broadening and continuous background in the sub-wetting layer region of electron energyKrál, Karel / Zdeněk, Petr et al. | 2002
- 91
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Carrier relaxation in quantum dots without wetting layerSanguinetti, S / Gurioli, M / Kuroda, T / Watanabe, K / Tateno, T / Minami, F / Wakaki, M / Koguchi, N et al. | 2002
- 93
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Investigation of inhomogeneous broadening of CdSe/ZnSe nanoisland photoluminescence band by resonant excitation methodsBorkovska, L.V. / Valakh, M.Ya. / Venger, E.F. / Sadofyev, Yu.G. / Korsunska, N.O. / Strelchuk, V.V. / Semenova, G.N. / Vuychik, M.V. et al. | 2002
- 95
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Large fluorescence quantum yield and low size dispersion from CdSe/ZnSe core/shell nanocrystalsReiss, Peter / Carayon, Sophie / Bleuse, Joël et al. | 2002
- 97
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Effect of growth conditions on optical properties of CdSe/ZnSe single quantum dotsMakino, T. / André, R. / Gérard, J.-M. / Romestain, R. / Si Dang, Le / Bartels, M. / Lischka, K. / Schikora, D. et al. | 2002
- 99
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Up-conversion luminescence via a below-gap state in CdSe/ZnS quantum dotsRakovich, Yu.P. / Donegan, J.F. / Filonovich, S.A. / Gomes, M.J.M. / Talapin, D.V. / Rogach, A.L. / Eychmüller, A. et al. | 2002
- 101
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Evaluation of nonlinear optical properties of cadmium chalcogenide nanomaterialsSeo, J.T / Yang, Q / Creekmore, S / Temple, D / Qu, L / Yu, W / Wang, A / Peng, X / Mott, A / Namkung, M et al. | 2002
- 104
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Optical switching spectroscopy of PbS quantum dots with dual-wavelength pump–probeHaché, Alain / LeBlanc, Serge-Émile / LoCascio, Michael / Martucci, Alessandro et al. | 2002
- 107
-
CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dotsCruz, J.M.R. / de Sales, F.V. / da Silva, S.W. / Soler, M.A.G. / Morais, P.C. / da Silva, M.J. / Quivy, A.A. / Leite, J.R. et al. | 2002
- 109
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Carrier dynamics in red-emitting self-organised InAs–AlGaAs quantum dots with indirect barriersMonte, A.F.G / Finley, J.J / Ashmore, A / Fox, A.M / Skolnick, M.S / Mowbray, D.J / Hopkins, M et al. | 2002
- 111
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Two-phonon capture processes into quantum dots: the role of intermediate statesMagnusdottir, I. / Uskov, A.V. / Bischoff, S. / Tromborg, B. / Mørk, J. et al. | 2002
- 114
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Surface morphology and optical property of 1.3(micro)m In0.5Ga0.5As-GaAs self-organized quantum dots grown by MBELan, Q. et al. | 2003
- 114
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Surface morphology and optical property of 1.3mm In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBELan, Q. / Niu, Z. C. / Zhou, D. Y. / Kong, Y. C. / Wang, X. D. / Miao, Z. H. / Feng, S. L. et al. | 2003
- 114
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Surface morphology and optical property of In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBELan, Q / Niu, Z.C / Zhou, D.Y / Kong, Y.C / Wang, X.D / Miao, Z.H / Feng, S.L et al. | 2002
- 117
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Photoluminescence of self-assembled InAs/AlAs quantum dots as a function of densityMa, Z / Pierz, K / Keyser, U.F / Haug, R.J et al. | 2002
- 120
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Observation of the spectral dependence of the spatial photocarrier redistribution in InAs/GaAs quantum dotsde Sales, F.V. / da Silva, S.W. / Cruz, J.M.R. / Soler, M.A.G. / Morais, P.C. / da Silva, M.J. / Quivy, A.A. / Leite, J.R. et al. | 2002
- 122
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Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densitiesMonte, A.F.G / de Sales, F.V / da Silva, S.W / Soler, M.A.G / Cruz, J.M.R / Morais, P.C / da Silva, M.J / Quivy, A.A / Leite, J.R et al. | 2002
- 124
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Evidence of excited levels in self-organized InAs/InP(001) islands with low size dispersionSalem, B. / Bremond, G. / Benyattou, T. / Bru-Chevallier, C. / Guillot, G. / Monat, C. / Gendry, M. / Hollinger, G. / Jbeli, A. / Marie, X. et al. | 2002
- 127
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InAsN-GaAs quantum dots with an intense and narrow photoluminescence peak at 1.3(micro)mJang, Y.D. et al. | 2003
- 127
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InAsN/GaAs quantum dots with an intense and narrow photoluminescence peak atJang, Y.D. / Yim, J.S. / Lee, U.H. / Lee, D. / Jang, J.W. / Park, K.H. / Jeong, W.G. / Lee, J.H. / Oh, D.K. et al. | 2002
- 127
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InAsN/GaAs quantum dots with an intense and narrow photoluminescence peak at 1.3mmJang, Y. D. / Yim, J. S. / Lee, U. H. / Lee, D. / Jang, J. W. / Park, K. H. / Jeong, W. G. / Lee, J. H. / Oh, D. K. et al. | 2003
- 129
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The energy level spacing between the ground and first excited states in InAs/GaAs quantum dots as a measure of the zero dimensionalityLee, U.H. / Jang, Y.D. / Lee, H. / Lee, D. / Kim, J.S. / Leem, J.Y. / Noh, S.K. et al. | 2002
- 131
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Nanostructures formed by sub- and close-to-critical Ge inclusions in a Si matrixCirlin, George E. / Talalaev, Vadim G. / Egorov, Vyatcheslav A. / Zakharov, Nikolai D. / Werner, Peter / Ledentsov, Nikolai N. / Ustinov, Victor M. et al. | 2002
- 134
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Effect of ageing on the luminescence intensity and lifetime of porous silicon: roles of recombination centersHuy, Bui / Binh, Phi Hoa / Diep, Bui Quang / Luong, Phi Van et al. | 2002
- 137
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Time resolved visible emission from Er3+-doped SiN thin filmsBell, M.J.V. / Anjos, V. et al. | 2002
- 139
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Transport properties of quantum dots with strong electron–phonon interactionTasai, Tomoki / Eto, Mikio et al. | 2002
- 143
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Long dephasing time and high temperature ballistic transport in an InGaAs open quantum dotHackens, B / Faniel, S / Delfosse, F / Gustin, C / Boutry, H / Huynen, I / Wallart, X / Bollaert, S / Cappy, A / Bayot, V et al. | 2002
- 147
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Transport properties through quantum dot in a vertical electric fieldLi, Shu-Shen / Xia, Jian-Bai et al. | 2002
- 149
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Unconventional mechanisms of resonance tunneling through complex quantum dotsKikoin, K. / Kuzmenko, T. / Avishai, Y. et al. | 2002
- 152
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Kondo effect and tristability in a double-quantum dotOrellana, Pedro A. / Lara, Gustavo A. / Anda, Enrique V. et al. | 2002
- 154
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Evidence for universal conductance fluctuations in an open quantum dot under a strictly parallel magnetic fieldGustin, C. / Faniel, S. / Hackens, B. / De Poortere, E.P. / Shayegan, M. / Bayot, V. et al. | 2002
- 156
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Weak antilocalization and UCFs in an open bismuth quantum dotHackens, B. / Minet, J.P. / Farhi, G. / Faniel, G. / Gustin, C. / Bayot, V. et al. | 2002
- 159
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Magnetic-field-induced quantum Hall—insulator transition and persistent photoconductivity in InAs/GaAs quantum dot layersKulbachinskii, Vladimir A. / Lunin, Roman A. / Rogozin, Vasili A. / Kytin, Vladimir G. / Zvonkov, Boris N. / Nekorkin, Sergey M. / Filatov, Dmitriy O. / de Visser, Anne et al. | 2002
- 161
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A novel InAs quantum wire systemYang, C.H / Yang, M.J / Cheng, K.A / Culbertson, J.C et al. | 2002
- 164
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Optical imaging spectroscopy of V-groove quantum wires: from localized to delocalized excitonsGuillet, T. / Voliotis, V. / Grousson, R. / Menant, M. / Wang, X.L. / Ogura, M. et al. | 2002
- 169
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Asymmetric carrier transport in InGaAs quantum wells and wires grown on tilted InP substratesMonte, A.F.G. / da Silva, S.W. / Cruz, J.M.R. / Morais, P.C. / Chaves, A.S. et al. | 2002
- 172
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Peculiarities of conductivity in structures delta-doped by Si on vicinal GaAs substrateKulbachinskii, Vladimir A. / Galiev, Galib B. / Mokerov, Vladimir G. / Lunin, Roman A. / Rogozin, Vasili A. / Derkach, Andrey V. / Vasil'evskii, Ivan S. et al. | 2002
- 174
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Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wiresAlén, B. / Martı́nez-Pastor, J. / Fuster, D. / Garcı́a, J.M. / González, L. / Molina, S.I. / Ponce, A. / Garcı́a, R. et al. | 2002
- 177
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Luminescence enhancement and carrier kinetics of disordered quantum-wire superlatticesSasaki, A. / Okanishi, R. / Shibakawa, S. / Liu, X.-Q. / Wang, X.-L. / Ogura, M. et al. | 2002
- 180
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Optical properties of self-organized InAs nanostructures grown on InAlAs/InP(001)Hjiri, M. / Hassen, F. / Maaref, H. / Salem, B. / Bremond, G. / Marty, O. / Brault, J. / Gendry, M. et al. | 2002
- 183
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Efficient indirect-exciton luminescence in silicon nanowiresNihonyanagi, S / Kanemitsu, Y et al. | 2002
- 185
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Doping into one-dimensional dangling-bond bands of natural quantum-wire-like Ga2Se3 semiconductorsIshikawa, M. / Nakayama, T. et al. | 2002
- 187
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Spectrum, correlations and dimensional crossover in triple 2D quantum crossbarsGredeskul, Sergey / Kuzmenko, Igor / Kikoin, Konstantin / Avishai, Yshai et al. | 2002
- 189
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Piled up charge effects in a ballistic transport in quantum wiresSablikov, V.A. / Shchamkhalova, B.S. et al. | 2002
- 191
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Dynamical quantum interference and its controllability in semiconductors irradiated by an intense terahertz laserLiu, Ren-Bao / Zhu, Bang-Fen et al. | 2002
- 197
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Combined exciton-electron optical processes in optical spectra of modulation doped QWsKochereshko, V.P. / Astakhov, G.V. / Yakovlev, D.R. / Ossau, W. / Landwehr, G. / Faschinger, W. / Wojtowicz, T. / Karczewski, G. / Kossut, J. et al. | 2002
- 201
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Strong carrier localization in Sb-terminated InGaAs/AlAsSb quantum wells grown by molecular beam epitaxyMozume, T et al. | 2002
- 204
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Confinement of electronic states in ultimately narrow GaAs/GaP quantum wellsMlayah, A. / Huntzinger, J.R. / Bachelier, G. / Carles, R. / Zwick, A. et al. | 2002
- 206
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Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wellsRudamas, C. / Martı́nez-Pastor, J. / González, L. / Vinattieri, A. / Colocci, M. et al. | 2002
- 209
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Phase shift, phase coherence and phase interference in the superlattice physicsPereyra, Pedro et al. | 2002
- 212
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Two-dimensional exciton revisitedParfitt, D.G.W. / Portnoi, M.E. et al. | 2002
- 215
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Magnetoexcitons from spatially separated electron–hole systems in semiconductor heterostructures with disorderDesforges, Jean / Singh, Mahi R et al. | 2002
- 217
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Phonon-assisted recombination of intra-subband magnetoexcitons and two-phonon dissociation of magnetorotons in the quantum Hall regimePortnoi, M.E. / Apalkov, V.M. et al. | 2002
- 220
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Exciton stark shift in graded GaAs/AlxGa1−xAs quantum wellsFerreira, E.C. / da Costa, J.A.P. / Freire, J.A.K. / Freire, V.N. / Farias, G.A. et al. | 2002
- 222
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Stark effect in the magneto-exciton energy in GaAs/AlxGa1−xAs double quantum wellsFerreira, E.C. / Da Costa, J.A.P. / Freire, J.A.K. et al. | 2002
- 225
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Exciton-based photoluminescence broadening in graded ZnSe/ZnSxSe1−x strained quantum wellsMaia, F.F. Jr. / Freire, J.A.K. / Freire, V.N. / Farias, G.A. / da Silva, E.F. Jr. et al. | 2002
- 227
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Electric field and interface fluctuation effects in CdTe/Cd1−xMnxTe strained quantum wellsSilva, E.D. / Freire, J.A.K. / da Silva, E.F. Jr. et al. | 2002
- 229
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Optical study of direct interface in InP/InAlAs/InP double heterostructures grown by MOCVDHellara, J. / Hassen, F. / Maaref, H. / Souliere, V. / Monteil, Y. et al. | 2002
- 232
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Indium segregation and reevaporation effects on the photoluminescence properties of highly strained InxGa1−xAs/GaAs quantum wellsIlahi, B. / Sfaxi, L. / Bouzaı̈ene, L. / Hassen, F. / Maaref, H. et al. | 2002
- 235
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First-principles calculations of the structural and electronic properties of the III-nitrides-based superlatticesBouhafs, B. / Lakdja, A. / Ruterana, P. et al. | 2002
- 238
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Electronic structure of cubic GaN/AlGaN quantum wellsArriaga, J / Hernández-Cocoletzi, H / Contreras-Solorio, D.A et al. | 2002
- 240
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Comparison of theoretical models for interband transitions in dilute nitrides and experimental measurementPotter, R.J. / Alexandropoulos, D. / Erol, A. / Mazzucato, S. / Balkan, N. / Adams, M.J. / Marie, X. / Carrère, H. / Bedel, E. / Lacoste, G. et al. | 2002
- 242
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S-shaped behaviour of the temperature-dependent energy band gap in dilute nitridesMazzucato, S. / Potter, R.J. / Erol, A. / Balkan, N. / Chalker, P.R. / Joyce, T.B. / Bullough, T.J. / Marie, X. / Carrère, H. / Bedel, E. et al. | 2002
- 245
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Band structure and optical gain in GaInAsN quantum wellsCarrère, H. / Arnoult, A. / Marie, X. / Amand, T. / Bedel-Pereira, E. / Potter, R.J. / Balkan, N. et al. | 2002
- 247
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Photo-induced interband absorption in group-III nitride quantum wellsKalliakos, S. / Lefebvre, P. / Taliercio, T. et al. | 2002
- 250
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Photo-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wellsMazzucato, S. / Erol, A. / Teke, A. / Arikan, M.C. / Potter, R.J. / Balkan, N. / Marie, X. / Boland-Thoms, A. / Carrère, H. / Bedel, E. et al. | 2002
- 252
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GaAsN and GaInAsN/GaAs quantum wells grown on substrates: growth conditions and optical propertiesBlanc, S. / Arnoult, A. / Carrère, H. / Fontaine, C. et al. | 2002
- 255
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Time-resolved gain dynamics in InGaN MQWs using a Kerr gateTaylor, R.A. / Smith, J.D. / Rice, J.H. / Ryan, J.F. / Someya, T. / Arakawa, Y. et al. | 2002
- 258
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On the origin of carrier localization on two-dimensional GaN substitution layers embedded in GaAsSchmidt, Heidemarie / Böhm, Georg et al. | 2002
- 260
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Magneto-optical studies of 2D hole Landau levels and screening of donor states in p-type modulation doped Ga0.5Al0.5As/GaAs interfacesBryja, L / Ryczko, K / Kubisa, M / Misiewicz, J / Ortner, G / Kress, A / Bayer, M / Forchel, A / Sorensen, C.B et al. | 2002
- 262
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Optical properties of remotely doped parabolic quantum wellsTabata, A. / Oliveira, J.B.B. / Lamas, T.E. / Sergio, C.S. / Quivy, A.A. / Gusev, G.M. / Leite, J.R. et al. | 2002
- 264
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Topological defects in 1D potential and superlatticesGumen, L / Feldman, E / Yurchenko, V / Krokhin, A / Pereyra, P et al. | 2002
- 266
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Lattice dynamic properties of interfaced InAs/GaAs superlatticesLemos, V / Barros, E.B / Freire, V.N / Gonçalves, J.R / Mendes Filho, J et al. | 2002
- 270
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Optical phonons dispersion relation in Si/3C-SiC heterostructuresSousa, J.M. / Vilela, R.C. / Costa Filho, R.N. / Nobre, E.F. / Freire, V.N. / Albuquerque, E.L. et al. | 2002
- 272
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Non-equilibrium electron transport in degenerate nitride heterostructures—dynamic screening effectsAnderson, D.R. / Babiker, M. / Bennett, C.R. / Probert, M.I.J. et al. | 2002
- 276
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DX-centers and long-term effects in the high-frequency hopping conductance in Si-doped GaAs/Al0.3Ga0.7As heterostructures in the quantum Hall regime: acoustical studiesDrichko, Irina L / Diakonov, Andrey M / Smirnov, Ivan Yu / Preobrazhenskii, Valery V / Toropov, Alexandr I / Galperin, Yuri M et al. | 2002
- 280
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Resistivity of the spin-polarized two-dimensional electron gas: scaling and width effectGold, A. / Dolgopolov, V.T. et al. | 2002
- 284
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Aharonov–Bohm effect in nanoscale quantum rings fabricated from compensating-layer GaAs/AlGaAs heterostructuresKähler, Dirk / Kunze, Ulrich / Reuter, Dirk / D. Wieck, Andreas et al. | 2002
- 286
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Coherent transport in an ensemble of connected quasi-ballistic ringsEstibals, O. / Bykov, A.A. / Marchishin, I.V. / Litvin, L.V. / Bakarov, A.K. / Latyshev, A.V. / Toropov, A.I. / Portal, J.C. et al. | 2002
- 289
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Dynamical conductivity of a two-dimensional electron gas under an intense terahertz radiationZhang, C. / Lough, B. et al. | 2002
- 292
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Insulator-quantum Hall transitions in two-dimensional electron gas containing self-assembled InAs dotsKim, Gil-Ho / Liang, C.-T. / Huang, C.F. / Lee, Myung-Hyun / Nicholls, J.T. / Ritchie, D.A. et al. | 2002
- 294
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Doping dependence of millimeterwave negative differential conductance in strain-compensated GaInAs/AlInAs superlatticesMinot, Christophe / Harmand, Jean-Christophe / Esnault, Jean-Claude et al. | 2002
- 297
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Polaronic effect in the charge dynamics of quantum wellsCamacho B, A.S. / Bohórquez, J. / Gutiérrez, R.M. et al. | 2002
- 300
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Peculiarities of the electron transport in very short period InAs/GaAs superlattices near quantum dot formationKulbachinskii, Vladimir A / Lunin, Roman A / Rogozin, Vasili A / Brandt, Nicolai B / Mokerov, Vladimir G / Fedorov, Yury V / Khabarov, Yury V et al. | 2002
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Observation of the breakdown in the coherency of the electron tunneling by measuring scattered electronsKim, Gyungock / Roh, Dong Wan / Paek, Seung Won et al. | 2002
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Effect of residual acceptors on electron mobility in single asymmetric quantum wellsLima, F.M.S. / Fonseca, A.L.A. / Nunes, O.A.C. / Qu, Fanyao / Freire, V.N. / da Silva, E.F. Jr. et al. | 2002
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Coupling of Mn2+ spins with a 2DEG in quantum Hall regimeTeran, F.J / Potemski, M / Maude, D.K / Wilamowski, Z / Hassan, A.K / Plantier, D / Jaroszynski, J / Wojtowicz, T / Karczewski, G et al. | 2002
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Magneto-optical Kerr effect study of GaMnAs layersHrabovsky, D / Vanelle, E / Sadowski, J / Fert, A.R / Yee, D.S / Redoules, J.P / Kanski, J / Ilver, L et al. | 2002
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Surface magnetostatic waves and magnetic polaritons at the junction of the magnetic superlattice and magnetic materialTagiyeva, R.T. / Saglam, M. et al. | 2002
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Optical and electrical spin injection in spin-LEDLiu, B.L. / Sénès, M. / Couderc, S. / Bobo, J.F. / Marie, X. / Amand, T. / Fontaine, C. / Arnoult, A. et al. | 2002
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Time-dependent spin interaction and switching in quantum dot molecule under the adiabatic approximationBen Chouikha, W. / Jaziri, S. / Bennaceur, R. et al. | 2002
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Circular photogalvanic effect and related effects in chiral carbon nanotubesIvchenko, E.L. / Spivak, B. et al. | 2002
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Control of light-matter interaction in microresonatorsBayer, Manfred et al. | 2002
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Second-harmonic generation measured on a GaAs photonic crystal planar waveguideAndreani, L.C / Cattaneo, F / Guizzetti, G / Malvezzi, A.M / Patrini, M / Vecchi, G / Romanato, F / Businaro, L / Di Fabrizio, E / Passaseo, A et al. | 2002
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Linear optical properties and photonic mode dispersion in GaAs/AlGaAs photonic crystal slabsPatrini, M. / Galli, M. / Agio, M. / Andreani, L.C. / Bajoni, D. / Guizzetti, G. / Businaro, L. / Di Fabrizio, E. / Romanato, F. / Passaseo, A. et al. | 2002
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Experimental dispersion of the radiative Bloch modes of GaAs photonic crystals consisting of pillars in a graphite arrangementCoquillat, D. / Peyrade, D. / Chen, Y. / Legros, R. / Torres, J. / De La Rue, R. / Manin-Ferlazzo, L. / Thierry-Mieg, V. / Lascaray, J.P. / Le Vassor d'Yerville, M. et al. | 2002
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Equifrequency surfaces in GaN/sapphire photonic crystalsPeyrade, D. / Torres, J. / Coquillat, D. / Legros, R. / Lascaray, J.P. / Chen, Y. / Manin-Ferlazzo, L. / Ruffenach, S. / Briot, O. / Le Vassor d'Yerville, M. et al. | 2002
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Bragg diffraction of light in high-quality synthetic opalsBaryshev, A.V. / Kaplyanskii, A.A. / Kosobukin, V.A. / Limonov, M.F. / Samusev, K.B. / Usvyat, D.E. et al. | 2002
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Optically induced Bragg switching in opal-VO2 photonic crystalsScherbakov, A.V. / Akimov, A.V. / Golubev, V.G. / Kaplyanskii, A.A. / Kurdyukov, D.A. / Meluchev, A.A. / Pevtsov, A.B. et al. | 2002
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Controlling quantum interference in nanostructuresKamli, Ali / Bougouffa, Smail et al. | 2002
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Enhanced optical properties of Si nanocrystals in planar microcavityToshikiyo, Kimiaki / Fujii, Minoru / Hayashi, Shinji et al. | 2002
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Lasing of CdSSe quantum dots in glass spherical microcavityLu, Shulong / Jia, Rui / Jiang, Desheng / Li, Shushen et al. | 2002
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Energy relaxation by polariton emission in asymmetric planar multilayer microcavitiesAl-Amri, M. / Babiker, M. / Bennett, C.R. et al. | 2002
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Non-linear resonant Rayleigh scattering from microcavityGurioli, M. / Cavigli, L. / Khitrova, G. / Gibbs, H.M. et al. | 2002
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Two-polariton interference phenomenon in dispersive and photonic band-gap materialsSingh, M.R. / Botha, A.E. / Tsang, C.-M. et al. | 2002
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Effect of bound electronic non-linearities in semiconductor microcavitiesSanchez, S. / De Matos, C. / Bardinal, V. / Fontaine, C. / Pugnet, M. et al. | 2002
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Study of the photodetection behaviour of oxide-confined vertical-cavity surface-emitting lasers (VCSELs)Bringer, C. / Bardinal, V. / Averseng, L. / Polesel-Maris, J. / Camps, T. / Dubreuil, P. / Fontaine, C. / Bedel-Pereira, E. / Vergnenegre, C. et al. | 2002
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InP based photonic crystal microlasers on silicon waferMonat, C. / Seassal, C. / Letartre, X. / Regreny, P. / Rojo-Romeo, P. / Viktorovitch, P. / Le Vassor d'Yerville, M. / Cassagne, D. / Albert, J.P. / Jalaguier, E. et al. | 2002
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Dynamic behavior of pulse emission from optically pumped micro-disk lasersXia, Jinan / Hoan O, Beom / Gol Lee, Seung / Lee, El-Hang et al. | 2002
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Coherent growth of InAs/GaAs self-assembled quantum dotsSantalla, S.N / Kanyinda-Malu, C / de la Cruz, R.M et al. | 2002
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