Radiation hardness of amorphous silicon particle sensors (English)
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- New search for: Miazza, C.
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- New search for: Shah, A.
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In:
Journal of Non-Crystalline Solids
;
352
, 9-20
;
1797-1800
;
2006
-
ISSN:
- Article (Journal) / Electronic Resource
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Title:Radiation hardness of amorphous silicon particle sensors
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Contributors:Wyrsch, N. ( author ) / Miazza, C. ( author ) / Dunand, S. ( author ) / Ballif, C. ( author ) / Shah, A. ( author ) / Despeisse, M. ( author ) / Moraes, D. ( author ) / Powolny, F. ( author ) / Jarron, P. ( author )
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Published in:Journal of Non-Crystalline Solids ; 352, 9-20 ; 1797-1800
-
Publisher:
- New search for: Elsevier B.V.
-
Publication date:2006-01-01
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Size:4 pages
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 352, Issue 9-20
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 839
-
The localization of electrons in amorphous semiconductors: A twenty-first century perspectiveTaylor, P. Craig et al. | 2006
- 851
-
Ionic amorphous oxide semiconductors: Material design, carrier transport, and device applicationHosono, Hideo et al. | 2006
- 859
-
Amorphous silicon memory arraysJackson, W.B. / Elder, R. / Hamburgen, W. / Jeans, A. / Kim, H.-J. / Luo, H. / Mei, P. / Perlov, C. / Taussig, C. / Branz, H. et al. | 2006
- 863
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Thirty years trajectory of amorphous and nanocrystalline silicon materials and their optoelectronic devicesHamakawa, Yoshihiro et al. | 2006
- 868
-
An adventure in disordered semiconductors: The localisation of the quantum wave functionSolomon, Ionel et al. | 2006
- 871
-
Light emitting diodes – How it startedGrimmeiss, Hermann G. / Allen, John W. et al. | 2006
- 881
-
Amorphous silicon – From doping to multi-billion dollar applicationsMadan, Arun et al. | 2006
- 887
-
Chalcogenides – Past, present, futurePopescu, Mihai et al. | 2006
- 892
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Growth chemistry of nanocrystalline silicon and germanium filmsDalal, Vikram L. / Muthukrishnan, Kamal / Niu, Xuejun / Stieler, Daniel et al. | 2006
- 896
-
Toward the fast deposition of highly crystallized microcrystalline silicon films with low defect density for Si thin-film solar cellsJia, Haijun / Saha, Jhantu K. / Ohse, Naoyuki / Shirai, Hajime et al. | 2006
- 901
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Microcrystalline silicon prepared at magnetic field modified nucleationKočka, J. / Mates, T. / Ledinský, M. / Stuchlíková, H. / Stuchlík, J. / Fejfar, A. et al. | 2006
- 906
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Dynamics of low temperature PECVD growth of microcrystalline silicon thin films: Impact of substrate surface treatmentsLosurdo, M. / Giangregorio, M.M. / Sacchetti, A. / Capezzuto, P. / Bruno, G. / Càrabe, J. / Gandìa, J.J. / Urbina, L. et al. | 2006
- 911
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The application of very high frequency inductively coupled plasma to high-rate growth of microcrystalline silicon filmsKosku, Nihan / Miyazaki, Seiichi et al. | 2006
- 915
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High-rate deposition of nanocrystalline silicon using the expanding thermal plasma techniqueKessels, W.M.M. / Houston, I.J. / Nadir, K. / van de Sanden, M.C.M. et al. | 2006
- 919
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Reaction mechanism of silicon Cat-CVDNakamura, S. / Matsumoto, K. / Susa, A. / Koshi, M. et al. | 2006
- 925
-
Advances in hot wire chemical vapor deposition technology for the synthesis of novel silicon thin films materialsMiddya, A.R. et al. | 2006
- 928
-
Thermodynamic analysis of gas phase chemistry in hot wire chemical vapor deposition of a-Si:H and mc-Si:HAdhikari, S. / Viswanathan, N. N. / Dusane, R. O. et al. | 2006
- 928
-
Thermodynamic analysis of gas phase chemistry in hot wire chemical vapor deposition of a-Si:H and μc-Si:HAdhikari, Subhra / Viswanathan, N.N. / Dusane, R.O. et al. | 2006
- 933
-
New insights in microcrystalline silicon deposition with expanding thermal plasma chemical vapor depositionvan Swaaij, R.A.C.M.M. / Jiménez Zambrano, R. / Smit, C. / van de Sanden, M.C.M. et al. | 2006
- 937
-
The role of ion-bulk interactions during high rate deposition of microcrystalline silicon by means of the multi-hole-cathode VHF plasmaSmets, A.H.M. / Kondo, M. et al. | 2006
- 941
-
Scaling properties of growing surfaces of microcrystalline siliconToyama, T. / Kitagawa, T. / Yoshida, W. / Sobajima, Y. / Okamoto, H. et al. | 2006
- 945
-
Surface characterisation of wafers for silicon-heterojunction solar cellsBarrio, R. / Maffiotte, C. / Gandía, J.J. / Cárabe, J. et al. | 2006
- 950
-
Model for the amorphous roughening transition in amorphous semiconductor depositionPodraza, N.J. / Wronski, C.R. / Collins, R.W. et al. | 2006
- 955
-
Annealing in water vapor as a new method for improvement of silicon thin film propertiesHonda, S. / Fejfar, A. / Kočka, J. / Yamazaki, T. / Ogane, A. / Uraoka, Y. / Fuyuki, T. et al. | 2006
- 959
-
Plasma diagnostics in silane–methane–hydrogen plasmas under pm-Si1−xCx:H deposition conditions: Correlation with film propertiesSuendo, V. / Roca i Cabarrocas, P. et al. | 2006
- 964
-
Large grain μc-Si:H films deposited at low temperature: Growth process and electronic propertiesAbramov, A. / Djeridane, Y. / Vanderhaghen, R. / Roca i Cabarrocas, P. et al. | 2006
- 968
-
Undoped and arsenic-doped low temperature (∼165°C) microcrystalline silicon for electronic devices processKandoussi, K. / Simon, C. / Coulon, N. / Mohammed-Brahim, T. / Moreac, A. et al. | 2006
- 968
-
Undoped and arsenic-doped low temperature (165degreeC) microcrystalline silicon for electronic devices processKandoussi, K. / Simon, C. / Coulon, N. / Mohammed-Brahim, T. / Moreac, A. et al. | 2006
- 972
-
Aluminum-induced crystallization: Nucleation and growth processSchneider, J. / Schneider, A. / Sarikov, A. / Klein, J. / Muske, M. / Gall, S. / Fuhs, W. et al. | 2006
- 976
-
Cross-sectional TEM study on Ni-mediated crystallization of amorphous siliconKim, Kyung Ho / Park, Seong Jin / Kim, Sung Hoon / Jang, Jin et al. | 2006
- 980
-
Theoretical study of the kinetics of grain nucleation in the aluminium-induced layer-exchange processSarikov, A. / Schneider, J. / Muske, M. / Gall, S. / Fuhs, W. et al. | 2006
- 984
-
A new approach to thin film crystal silicon on glass: Biaxially-textured silicon on foreign template layersTeplin, Charles W. / Ginley, David S. / Branz, Howard M. et al. | 2006
- 989
-
Rapid recrystallization of amorphous silicon utilizing the plasma jet at atmospheric pressureSakurai, Yusuke / Yeo, Mina / Shirai, Hajime / Kobayashi, Tomohiro / Hasegawa, Yasuhiro et al. | 2006
- 993
-
Selective crystallization of amorphous silicon thin film by a CW green laserPark, Seong Jin / Ku, Yu Mi / Kim, Eun Hyun / Jang, Jin / Kim, Ki Hyung / Kim, Chae Ok et al. | 2006
- 998
-
Cw argon laser crystallization of silicon films: Structural propertiesMichaud, J.F. / Rogel, R. / Mohammed-Brahim, T. / Sarret, M. et al. | 2006
- 1003
-
Laser crystallization of compensated hydrogenated amorphous silicon thin filmsSaleh, R. / Nickel, N.H. / Maydell, K.v. et al. | 2006
- 1008
-
Synthesis of polycrystalline silicon thin films with ‘icosahedral’ symmetry by ceramics hot wire chemical vapor depositionMiddya, A.R. / Liang, J.-J. / Ghosh, K. et al. | 2006
- 1011
-
Detailed structural study of low temperature mixed-phase Si films by X-TEM and ambient conductive AFMMates, T. / Bronsveld, P.C.P. / Fejfar, A. / Rezek, B. / Kočka, J. / Rath, J.K. / Schropp, R.E.I. et al. | 2006
- 1016
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Amorphous silicon deposited by xenon ion beam assisted depositionBarbieri, P.F. / de Oliveira, M.H. Jr. / Champi, A. / Marques, F.C. et al. | 2006
- 1020
-
Electron spin resonance studies of microcrystalline and amorphous silicon irradiated with high energy electronsAstakhov, Oleksandr / Finger, Friedhelm / Carius, Reinhard / Lambertz, Andreas / Petrusenko, Yuri / Borysenko, Valery / Barankov, Dmitriy et al. | 2006
- 1024
-
Determination of the density of states of semiconductors from steady-state photoconductivity measurementsSchmidt, J.A. / Longeaud, C. / Koropecki, R.R. / Kleider, J.P. et al. | 2006
- 1028
-
Numerical modeling of thermally-stimulated currents for the density-of-states determination in thin-film semiconductorsMain, C. / Souffi, N. / Reynolds, S. / Brüggemann, R. et al. | 2006
- 1032
-
Studies of the phonon density of states in ab initio generated amorphous structures of pure siliconValladares, Alexander / Valladares, R.M. / Alvarez-Ramírez, F. / Valladares, Ariel A. et al. | 2006
- 1037
-
Influence of compositional and structural changes on hydrogen bonding in silicon and silicon–germanium alloysNickel, N.H. / Weizman, M. / Sieber, I. / Yan, B. et al. | 2006
- 1041
-
Microscopic properties of silicon dihydride bonding in a-Si:HBobela, David C. / Su, T. / Taylor, P.C. / Ganguly, G. et al. | 2006
- 1045
-
Substrate temperature dependence of microcrystalline silicon growth by PECVD techniqueMukhopadhyay, Sumita / Chowdhury, Amartya / Ray, Swati et al. | 2006
- 1049
-
Relative importance of hydrogen atom flux and ion bombardment to the growth of mc-Si:H thin filmsLyka, B. / Amanatides, E. / Mataras, D. et al. | 2006
- 1049
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Relative importance of hydrogen atom flux and ion bombardment to the growth of μc-Si:H thin filmsLyka, B. / Amanatides, E. / Mataras, D. et al. | 2006
- 1055
-
Hydrogen-induced crystallization of amorphous silicon clusters in a plasma reactorBrulin, Q. / Ning, N. / Vach, H. et al. | 2006
- 1059
-
Defect-state engineering in a-Si:H: An effective tool for studying processes during light-induced degradationNádaždy, V. / Durný, R. / Zeman, M. et al. | 2006
- 1064
-
Light-induced creation of defects related to low energy photoluminescence in hydrogenated amorphous siliconOgihara, C. / Nomiyama, T. / Yamamoto, H. / Nakanishi, K. / Harada, J. / Yu, X. / Morigaki, K. et al. | 2006
- 1068
-
The nature of the defect states above midgap and their role in the light-induced metastability of a-Si:HKounavis, P. et al. | 2006
- 1071
-
Radiation-induced defects in a-Si:H by 1.5MeV He4 particles studied by photoconductivity and photothermal deflection spectroscopyMorgado, E. / Schwarz, R. / Braz, T. / Casteleiro, C. / Maçarico, A. / Vieira, M. / Alves, E. et al. | 2006
- 1075
-
Metastable effects in silicon thin films: Atmospheric adsorption and light-induced degradationSmirnov, V. / Reynolds, S. / Finger, F. / Carius, R. / Main, C. et al. | 2006
- 1079
-
Metastable dark and photoconductive properties of microcrystalline siliconBrüggemann, R. / Souffi, N. et al. | 2006
- 1083
-
Experimental evidence for extended hydrogen diffusion in silicon thin films during light-soakingKail, F. / Fellah, S. / Abramov, A. / Hadjadj, A. / Roca i Cabarrocas, P. et al. | 2006
- 1087
-
Hole mobilities and the physics of amorphous silicon solar cellsSchiff, E.A. et al. | 2006
- 1093
-
Electron and hole transport in microcrystalline silicon solar cells studied by time-of-flight photocurrent spectroscopyDylla, T. / Reynolds, S. / Carius, R. / Finger, F. et al. | 2006
- 1097
-
Transport properties of microcrystalline silicon, prepared at high growth rateKočka, J. / Mates, T. / Ledinský, M. / Stuchlíková, H. / Stuchlík, J. / Fejfar, A. et al. | 2006
- 1101
-
Transport properties and defects in silicon nanoparticles and effect of embedding in amorphous silicon layersGueunier-Farret, M.E. / Kleider, J.P. / Voigt, F. / Brüggemann, R. / Bauer, G.H. / Huisken, F. / Ledoux, G. et al. | 2006
- 1105
-
AMPS-1D simulation studies of electronic transport in n+-μc-Si:H thin filmsTripathi, S. / Dusane, R.O. et al. | 2006
- 1109
-
Density-of-states in microcrystalline silicon from thermally-stimulated conductivitySouffi, N. / Bauer, G.H. / Brüggemann, R. et al. | 2006
- 1113
-
Investigation of hopping transport in n-a-Si:H/c-Si solar cells with pulsed electrically detected magnetic resonanceBoehme, C. / Behrends, J. / Maydell, K.v. / Schmidt, M. / Lips, K. et al. | 2006
- 1117
-
Universal critical exponents in percolation systems with tunnelingBaskin, E. et al. | 2006
- 1122
-
Time-of-flight measurements in inhomogeneous electric fieldsEmelianova, E.V. / Arkhipov, V.I. / Adriaenssens, G.J. et al. | 2006
- 1126
-
Charging and Coulomb blockade effects of the nc-Si embedded in SiNx double-barrier structuresHuang, Xinfan / Wu, Liangcai / Dai, Min / Han, Peigao / Yu, Linwei / Ma, Zhongyuan / Liu, Yansong / Li, Wei / Chen, Kunji et al. | 2006
- 1130
-
Trapping phenomena in intrinsic hydrogenated amorphous silicon like materials studied using current transient spectroscopiesTripathi, Vibha / Mohapatra, Y.N. / Roca i Cabarrocas, P. et al. | 2006
- 1134
-
Characterization of the protocrystalline silicon multilayerKwon, Seong Won / Kwak, Joonghwan / Myong, Seung Yeop / Lim, Koeng Su et al. | 2006
- 1138
-
Understanding the photoluminescence over 13-decade lifetime distribution in a-Si:HAoki, Takeshi et al. | 2006
- 1144
-
Two characteristic photoluminescence states in a-Si:H and its alloysOheda, Hidetoshi et al. | 2006
- 1148
-
Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline silicon embedded in a silicon amorphous matrixCerqueira, M.F. / Losurdo, M. / Monteiro, T. / Stepikhova, M. / Soares, M.J. / Peres, M. / Alves, E. / Conde, O. et al. | 2006
- 1152
-
Photoluminescence of Si or Ge nanocrystallites embedded in silicon oxideTorchynska, T.V. / Hernandez, A. Vivas / Goldstein, Y. / Jedrzejewskii, J. / Sandoval, S. Jiménez et al. | 2006
- 1156
-
Electron-paramagnetic resonance and photoluminescence study of Si nanocrystals-photosensitizers of singlet oxygen moleculesKonstantinova, E.A. / Demin, V.A. / Vorontzov, A.S. / Ryabchikov, Yu. V. / Belogorokhov, I.A. / Osminkina, L.A. / Forsh, P.A. / Kashkarov, P.K. / Timoshenko, V. Yu. et al. | 2006
- 1160
-
Photoluminescence of geminate and non-geminate pairs in amorphous semiconductorsSingh, Jai et al. | 2006
- 1163
-
Kinetics of the photoinduced evolution of the nanostructured porous silicon photoluminescenceKoropecki, R.R. / Arce, R.D. / Gennaro, A.M. / Spies, C. / Schmidt, J.A. et al. | 2006
- 1167
-
Non-Langevin bimolecular recombination in low-mobility materialsJuška, G. / Arlauskas, K. / Stuchlik, J. / Österbacka, R. et al. | 2006
- 1172
-
Study of anomalous behavior of steady state photoconductivity in highly crystallized undoped microcrystalline Si filmsRam, Sanjay K. / Kumar, Satyendra / Roca i Cabarrocas, P. et al. | 2006
- 1176
-
Modulated photoconductivity method for investigation of band gap states distribution in silicon-based thin filmsKazanskii, A.G. / Khabarova, K.Yu. / Terukov, E.I. et al. | 2006
- 1180
-
Photo-carrier transport in nanocrystalline silicon filmsShimakawa, K. et al. | 2006
- 1184
-
Numerical simulation of a low- and a high-electric-field photocurrent decay in a-Si:HAllag, A. / Smaïl, T. / Aoucher, M. et al. | 2006
- 1188
-
Photoluminescence and structure investigations of Si nano-crystals in amorphous silicon matrixTorchynska, T.V. / Vivas Hernandez, A. / Matsumoto, Yasuhiro / Khomenkova, L. / Shcherbina, L. et al. | 2006
- 1192
-
Photoluminescence properties of erbium-doped structures of silicon nanocrystals in silicon dioxide matrixTimoshenko, V.Yu. / Zhigunov, D.M. / Kashkarov, P.K. / Shalygina, O.A. / Teterukov, S.A. / Zhang, R.J. / Zacharias, M. / Fujii, M. / Hayashi, Sh. et al. | 2006
- 1196
-
Optical properties of microcrystalline 3C–SiC:H films measured by resonant photothermal bending spectroscopyKunii, Toshie / Honda, Takashi / Yoshida, Norimitsu / Nonomura, Shuichi et al. | 2006
- 1200
-
Determination of Raman emission cross-section ratio in hydrogenated microcrystalline siliconVallat-Sauvain, E. / Droz, C. / Meillaud, F. / Bailat, J. / Shah, A. / Ballif, C. et al. | 2006
- 1204
-
Spectroscopic ellipsometry study of nickel induced crystallization of a-SiPereira, L. / Águas, H. / Beckers, M. / Martins, R.M.S. / Fortunato, E. / Martins, R. et al. | 2006
- 1209
-
Characterization of mixed phase silicon by Raman spectroscopyLedinský, M. / Fekete, L. / Stuchlík, J. / Mates, T. / Fejfar, A. / Kočka, J. et al. | 2006
- 1213
-
New approach to capacitance spectroscopy for interface characterization of a-Si:H/c-Si heterojunctionsGudovskikh, A.S. / Kleider, J.P. / Stangl, R. et al. | 2006
- 1217
-
Electronic states in a-Si:H/c-Si heterostructuresKorte, L. / Laades, A. / Schmidt, M. et al. | 2006
- 1221
-
Fast quantum efficiency measurement of solar cells by Fourier transform photocurrent spectroscopyHod’áková, L. / Poruba, A. / Kravets, R. / Vaněček, M. et al. | 2006
- 1225
-
Modeling of the emission red-shift in organic–inorganic di-ureasil hybridsFerreira, R.A. Sá / Ferreira, A.L. / Carlos, L.D. et al. | 2006
- 1230
-
Controlled light emission from dye-impregnated porous silicon microcavitiesVenturello, A. / Ricciardi, C. / Giorgis, F. / Strola, S. / Salvador, G.P. / Garrone, E. / Geobaldo, F. et al. | 2006
- 1234
-
Micromechanical properties of amorphous, nanocrystalline and transition phase hot-wire thin-silicon MEMSPatil, Samadhan B. / Adrega, Teresa / Pimentel, Alexandra / Chu, V. / Conde, J.P. et al. | 2006
- 1238
-
Complex study of mechanical properties of a-Si:H and a-SiC:H boron doped filmsBuršíková, Vilma / Sládek, Petr / St’ahel, Pavel / Buršík, Jiří et al. | 2006
- 1242
-
Mechanical properties of thin silicon films deposited on glass and plastic substrates studied by depth sensing indentation techniqueBuršíková, Vilma / Sládek, Petr / St’ahel, Pavel / Buršík, J. et al. | 2006
- 1246
-
Study of mechanical stability of suspended bridge devices used as pH sensorsBendriaa, F. / Le Bihan, F. / Salaün, A.C. / Mohammed-Brahim, T. / Bonnaud, O. et al. | 2006
- 1250
-
Superior structural and electronic properties for amorphous silicon–germanium alloys deposited by a low temperature hot wire chemical vapor deposition processDatta, Shouvik / Xu, Yueqin / Mahan, A.H. / Branz, Howard M. / Cohen, J. David et al. | 2006
- 1255
-
Microcrystalline silicon–germanium alloys for solar cell application: Growth and material propertiesMatsui, T. / Ogata, K. / Isomura, M. / Kondo, M. et al. | 2006
- 1259
-
Successive segregation in laser-crystallized poly-SiGe thin filmsWeizman, M. / Nickel, N.H. / Sieber, I. / Yan, B. et al. | 2006
- 1263
-
Deposition phase diagrams for Si1−xGex:H from real time spectroscopic ellipsometryPodraza, N.J. / Wronski, C.R. / Collins, R.W. et al. | 2006
- 1268
-
The similarities between amorphous silicon and germanium stretch mode dynamicsJobson, K.W. / Wells, J.-P.R. / Schropp, R.E.I. / Carder, D.A. / Phillips, P.J. / Dijkhuis, J.I. et al. | 2006
- 1272
-
PECVD growth of Six:Ge1−x films for high speed devices and MEMSKannan, Srinivasan / Taylor, Craig / Allred, David et al. | 2006
- 1275
-
Influences of GeF4 on poly-SiGe films prepared by reactive thermal CVDZhang, J.J. / Shimizu, K. / Zhao, Y. / Xue, J.M. / Geng, X.H. / Xiong, S.Z. / Wu, C.Y. / Hanna, J. et al. | 2006
- 1279
-
Ab initio modeling of interstitial oxygen in crystalline SiGe alloysTorres, V.J.B. / Coutinho, J. / Briddon, P.R. / Barroso, M. et al. | 2006
- 1282
-
SEM and Raman studies of annealed nanocrystalline GaN and amorphous GaN:OTrodahl, H.J. / Grigorescu, C.E.A. / Bittar, A. / Budde, F. / Ruck, B.J. / Granville, S. / Williams, G.V.M. / Monnereau, O. / Notonier, R. et al. | 2006
- 1286
-
Spectroscopic investigation of Nd-doped amorphous SiN filmsRibeiro, C.T.M. / Zanatta, A.R. et al. | 2006
- 1290
-
Structure changes of AlN:Ho films with annealing and enhancement of the Ho3+ emissionAldabergenova, S.B. / Frank, G. / Strunk, H.P. / Maqbool, M. / Richardson, H.H. / Kordesch, M.E. et al. | 2006
- 1294
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Amorphous Silicon Nitride: a suitable alloy for optical multilayered structuresRicciardi, C. / Ballarini, V. / Galli, M. / Liscidini, M. / Andreani, L.C. / Losurdo, M. / Bruno, G. / Lettieri, S. / Gesuele, F. / Maddalena, P. et al. | 2006
- 1298
-
Local bonding in PECVD-SiOxNy filmsCriado, D. / Alayo, M.I. / Fantini, M.C.A. / Pereyra, I. et al. | 2006
- 1303
-
Carbon nano-structures containing nitrogen and hydrogen prepared by ion beam assisted depositionParedez, P. / Marchi, M.C. / Maia da Costa, M.E.H. / Figueroa, C.A. / Kleinke, M.U. / Ribeiro, C.T.M. / Sánchez-López, J.C. / Rojas, T.C. / Alvarez, F. et al. | 2006
- 1307
-
Some properties of amorphous carbon films deposited on the grounded electrode of a RF-PECVD reactor from Ar–CH4 mixturesGupta, Namita Dutta / Longeaud, C. / Chaudhuri, P. / Bhaduri, A. / Vignoli, S. et al. | 2006
- 1310
-
Study of CNTs and nanographite grown by thermal CVD using different precursorsPorro, S. / Musso, S. / Giorcelli, M. / Tagliaferro, A. / Dalal, S.H. / Teo, K.B.K. / Jefferson, D.A. / Milne, W.I. et al. | 2006
- 1314
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Oxygen plasma etching of carbon nano-structures containing nitrogenAcuña, J.J.S. / Figueroa, C.A. / Maia da Costa, M.E.H. / Paredez, P. / Ribeiro, C.T.M. / Alvarez, F. et al. | 2006
- 1319
-
Nature and evolution of ESR active centers in ta-C:HFanchini, G. / Tagliaferro, A. et al. | 2006
- 1323
-
DC and AC Hopping transport in metal/amorphous carbon nitride/metal devicesKleider, J.P. / Gudovskikh, A.S. / Godet, C. et al. | 2006
- 1327
-
Deep traps influence in polycrystalline diamond electrical transport chargeMadaleno, J.C. / Pereira, L. et al. | 2006
- 1332
-
The energetics of hydrogen adsorbed in nanoporous carbon: A simulational studyLoustau, Emilye R.L. / Estrada, Rubén / Valladares, Ariel A. et al. | 2006
- 1336
-
Fabry–Perot resonance enhancement–inhibition of spontaneous light emission from a-C:H thin filmsTóth, S. / Veres, M. / Füle, M. / Koós, M. et al. | 2006
- 1340
-
Size of spatial confinement at luminescence centers determined from resonant excitation bands of a-C:H photoluminescenceFüle, M. / Budai, J. / Tóth, S. / Veres, M. / Koós, M. et al. | 2006
- 1344
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Spectroscopy of thin nanodiamond layers and membranesKravets, R. / Remes, Z. / Vorlicek, V. / Bryknar, Z. / Nesladek, M. / Potmesil, J. / Poruba, A. / Vanecek, M. et al. | 2006
- 1348
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Thickness dependence of the structure of a-C:H thin films prepared by rf-CVD evidenced by Raman spectroscopyVeres, M. / Tóth, S. / Füle, M. / Koós, M. et al. | 2006
- 1352
-
Study of electron field emission from arrays of multi-walled carbon nanotubes synthesized by hot-wire dc plasma-enhanced chemical vapor depositionCojocaru, Costel Sorin / Kim, Dohyung / Pribat, Didier / Bourée, Jean-Eric / Minoux, Eric / Gangloff, Laurent / Legagneux, Pierre et al. | 2006
- 1357
-
Influence of deposition parameters and post-deposition plasma treatments on the photoluminescence of polymorphous silicon carbon alloysSuendo, V. / Patriarche, G. / Roca i Cabarrocas, P. et al. | 2006
- 1361
-
Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniquesFerreira, I. / Fortunato, E. / Vilarinho, P. / Viana, A.S. / Ramos, A.R. / Alves, E. / Martins, R. et al. | 2006
- 1367
-
Nanocrystalline cubic silicon carbide films prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at a low substrate temperatureKomura, Y. / Tabata, A. / Narita, T. / Kondo, A. / Mizutani, T. et al. | 2006
- 1371
-
Silicon–carbon films deposited at low substrate temperatureAmbrosone, G. / Coscia, U. / Lettieri, S. / Maddalena, P. / Noce, M. Della / Ferrero, S. / Restello, S. / Rigato, V. / Tucci, M. et al. | 2006
- 1376
-
Structural properties of microcrystalline SiC deposited at low substrate temperatures by HWCVDKlein, S. / Houben, L. / Carius, R. / Finger, F. / Fischer, W. et al. | 2006
- 1380
-
Microstructure analysis of a-SiC:H thin films grown by high-growth-rate PECVDRicciardi, C. / Primiceli, A. / Germani, G. / Rusconi, A. / Giorgis, F. et al. | 2006
- 1384
-
Hydrogenated amorphous silicon–carbon alloys obtained from Ar–SiH4–CH4 gas mixtures: Structural and transport propertiesVignoli, S. / Chaudhuri, P. / Bhaduri, A. / Gupta, N. Dutta / Longeaud, C. et al. | 2006
- 1388
-
Structural, optical and electrical properties of helium diluted a-Si1−xCx:H films deposited by PECVDLoulou, M. / Gharbi, R. / Fathallah, M.A. / Ambrosone, G. / Coscia, U. / Abbate, G. / Marino, A. / Ferrero, S. / Tresso, E. et al. | 2006
- 1392
-
Post thermal annealing crystallization and reactive ion etching of SiC films produced by PECVDOliveira, A.R. / Carreño, M.N.P. et al. | 2006
- 1398
-
UV and blue light emission from SiC nanoclusters in annealed amorphous SiC alloysXu, Jun / Mei, Jiaxin / Rui, Yunjun / Chen, Deyuan / Cen, Zhanhong / Li, Wei / Ma, Zhongyuan / Xu, Ling / Huang, Xinfan / Chen, Kunji et al. | 2006
- 1402
-
Microstructure characterization of SiCl4-based microcrystalline silicon films by effusion of implanted heliumBeyer, Wolfhard / Carius, Reinhard / Zastrow, Uwe et al. | 2006
- 1406
-
Amorphous hydrogenated silicon–carbon as new antireflective coating for solar cellsStapinski, Tomasz / Swatowska, Barbara et al. | 2006
- 1410
-
Characterization of nanocrystalline silicon carbide filmsZhang, S. / Pereira, L. / Hu, Z. / Ranieiro, L. / Fortonato, E. / Ferreira, I. / Martins, R. et al. | 2006
- 1416
-
Time resolved photoluminescence of hydrogenated amorphous silicon carbon thin films deposited by HWCVDSwain, B.P. / Gundu Rao, T.K. / Dusane, R.O. et al. | 2006
- 1421
-
Hopping current density in amorphous carbon/crystalline silicon heterojunctionsKatsuno, T. / Godet, C. / Loir, A.S. / Garrélie, F. et al. | 2006
- 1425
-
Synthesis, characterization and modelling of silicon based opalsPallavidino, L. / Razo, D. Santamaria / Geobaldo, F. / Balestreri, A. / Bajoni, D. / Galli, M. / Andreani, L.C. / Ricciardi, C. / Celasco, E. / Quaglio, M. et al. | 2006
- 1430
-
A comparative analysis of silicon dioxide films deposited by ECR-PECVD, TEOS-PECVD and Vapox-APCVDPecora, A. / Maiolo, L. / Fortunato, G. / Caligiore, C. et al. | 2006
- 1434
-
High quality SiO2 gate insulator suitable for poly-Si TFTs on plastic substrates employing inductively coupled plasma-chemical vapor deposition with N2O plasma treatment and excimer laser annealingHan, Sang-Myeon / Shin, Moon-Young / Park, Joong-Hyun / Han, Min-Koo et al. | 2006
- 1438
-
Correlation of PECVD SiOxNy dielectric layer structural properties and Si/SiOxNy/Al capacitors interface electrical propertiesAlbertin, K.F. / Pereyra, I. et al. | 2006
- 1444
-
UV and ozone influence on the conductivity of ZnO thin filmsGonçalves, G. / Pimentel, A. / Fortunato, E. / Martins, R. / Queiroz, E.L. / Bianchi, R.F. / Faria, R.M. et al. | 2006
- 1448
-
Role of the thickness on the electrical and optical performances of undoped polycrystalline zinc oxide films used as UV detectorsPimentel, A. / Gonçalves, A. / Marques, A. / Martins, R. / Fortunato, E. et al. | 2006
- 1453
-
Optical active centres in ZnO samplesMonteiro, T. / Soares, M.J. / Neves, A. / Pereira, S. / Correia, M.R. / Peres, M. / Alves, E. / Rogers, D. / Teherani, F. / Munoz-SanJose, V. et al. | 2006
- 1457
-
Gas sensitive light emission properties of tin oxide and zinc oxide nanobeltsLettieri, S. / Bismuto, A. / Maddalena, P. / Baratto, C. / Comini, E. / Faglia, G. / Sberveglieri, G. / Zanotti, L. et al. | 2006
- 1461
-
Spray deposited heavy doped indium oxide film as an efficient hole supplier in silicon light-emitting diodesMalik, O. / Grimalsky, V. / De la Hidalga-W, J. et al. | 2006
- 1466
-
Comparative study of ITO layers deposited by DC and RF magnetron sputtering at room temperatureKurdesau, F. / Khripunov, G. / da Cunha, A.F. / Kaelin, M. / Tiwari, A.N. et al. | 2006
- 1471
-
Electron transport and optical characteristics in amorphous indium zinc oxide filmsMartins, R. / Almeida, P. / Barquinha, P. / Pereira, L. / Pimentel, A. / Ferreira, I. / Fortunato, E. et al. | 2006
- 1475
-
On the electronic transport properties of bismuth oxide thin filmsLeontie, L. / Rusu, G.I. et al. | 2006
- 1479
-
Optical properties of cobalt oxide films by a dipping sol–gel processDrasovean, Romana / Monteiro, Regina / Fortunato, Elvira / Musat, Viorica et al. | 2006
- 1486
-
Optical and magnetic properties of Co-doped TiO2 thin films grown by pulsed laser depositionPopovici, N. / Jimenez, E. / da Silva, R.C. / Branford, W.R. / Cohen, L.F. / Conde, O. et al. | 2006
- 1490
-
AC and DC conductivity analysis of hydroxyapatite and titanium calcium phosphate formed by dry ball millingSilva, C.C. / Graça, M.P.F. / Valente, M.A. / Sombra, A.S.B. et al. | 2006
- 1495
-
Electrical impedance spectroscopy and aging behavior of glasses containing silver oxide and metallic silver nanoparticlesHulpus, A.O. / Monteiro, J.H. / Mendiratta, S.K. / Carrasco, M.F. / Ardelean, I. et al. | 2006
- 1501
-
Study of the electric and dielectric properties of SiO2–Li2O–Nb2O5 sol–gel glass–ceramicsGraça, M.P.F. / da Silva, M.G. Ferreira / Sombra, A.S.B. / Valente, M.A. et al. | 2006
- 1506
-
Self-organization and anisotropy in amorphous chalcogenidesPopescu, M. / Sava, F. / Lőrinczi, A. et al. | 2006
- 1510
-
Atomic structure and bonding properties in amorphous Cux(As2S3)1−x by ab initio molecular-dynamics simulationsAniya, M. / Shimojo, F. et al. | 2006
- 1514
-
An anomalous X-ray scattering study on glassy superionic conductor (As2Se3)0.4(AgI)0.6 using a third-generation synchrotron radiation facilityUsuki, T. / Hosokawa, S. / Bérar, J.-F. et al. | 2006
- 1517
-
Partial structure analysis of glassy As2Se3 using anomalous X-ray scatteringHosokawa, S. / Wang, Y. / Pilgrim, W.-C. / Bérar, J.-F. / Mamedov, S. / Boolchand, P. et al. | 2006
- 1520
-
Nano-scale annealing-induced structural changes in As-rich pulsed laser deposited AsxSe100−x films studied by XPSSiokou, A. / Kalyva, M. / Yannopoulos, S.N. / Němec, P. / Frumar, M. et al. | 2006
- 1525
-
Microstructural characterization and optical properties of ZnSe thin filmsRusu, G.I. / Ciupina, V. / Popa, M.E. / Prodan, G. / Rusu, G.G. / Baban, C. et al. | 2006
- 1529
-
Stimulated structural transformations in Se0.6Te0.4/SiOx nano-layered compositeKokenyesi, S. / Malyovanik, M. / Cheresnya, V. / Shiplyak, M. / Csik, A. et al. | 2006
- 1534
-
Network disruption and modification in arsenic and germanium chalcogenides by the addition of univalent metal sulfides and selenides: Comparisons with network disruption and modification in zirconium silicate alloysLucovsky, G. / Phillips, J.C. et al. | 2006
- 1539
-
Density of states of a-Se near the valence bandKoughia, K. / Kasap, S.O. et al. | 2006
- 1543
-
Discrete defect levels in the amorphous selenium bandgapBenkhedir, M.L. / Brinza, M. / Qamhieh, N. / Adriaenssens, G.J. et al. | 2006
- 1547
-
Amorphous arsenic chalcogenide films modified using rare-earth complexesKozyukhin, S.A. / Voronkov, E.N. / Kuz’mina, N.P. et al. | 2006
- 1551
-
Differential scanning calorimetric studies on As–Te–Si glasses: Network topological effects and the composition dependence of thermal parametersAnbarasu, M. / Asokan, S. et al. | 2006
- 1555
-
Synthesis and physical properties of Si(Ge)–Se–Te glassesKulakova, L.A. / Kudoyarova, V.Kh. / Melekh, B.T. / Bakharev, V.I. et al. | 2006
- 1560
-
Correlation between bismuth concentration and distribution of relaxators in As2Se3(Bi)x layersCastro, R.A. / Bordovsky, G.A. / Bordovsky, V.A. / Anisimova, N.I. et al. | 2006
- 1563
-
Spin-coated As33S67−xSex thin films: the effect of annealing on structure and optical propertiesKohoutek, T. / Wagner, T. / Vlcek, Mir. / Vlcek, Mil. / Frumar, M. et al. | 2006
- 1567
-
Optical and electronic properties of Ge–Sb–Te filmsLi, H. / Ju, T. / Taylor, P.C. et al. | 2006
- 1570
-
Correlation between low frequency vibrational excitations and glass transition dynamics in amorphous semiconductors Ge1−xSxOgura, Hideki / Matsuishi, Kiyoto / Onari, Seinosuke et al. | 2006
- 1574
-
1/f Conductance noise in stabilized amorphous seleniumMajid, Shaikh Hasibul / Johanson, Robert E. et al. | 2006
- 1578
-
Percolation breakdown of amorphous semiconductorsVoronkov, E.N. / Popov, A.I. / Savinov, I.S. / Fairushin, A.R. et al. | 2006
- 1582
-
In situ simultaneous measurements of photodarkening and photoinduced volume changes in chalcogenide glassesIkeda, Y. / Shimakawa, K. et al. | 2006
- 1587
-
Universal feature of photo-induced volume changes in chalcogenide glassesHegedüs, J. / Kohary, K. / Kugler, S. et al. | 2006
- 1591
-
Effect of pressure on photo-induced interdiffusion in amorphous chalcogenide nanomultilayersIvan, I. / Erdélyi, G. / Kokenyesi, S. / Beke, D.L. et al. | 2006
- 1595
-
The effect of temperature on photoinduced metastability in avalanche a-Se layersReznik, A. / Lui, B.J.M. / Lyubin, V. / Klebanov, M. / Ohkawa, Y. / Matsubara, T. / Miyakawa, K. / Kubota, M. / Tanioka, K. / Kawai, T. et al. | 2006
- 1599
-
Photoluminescence, photostructural transformations and photoinduced anisotropy in rare-earth-doped chalcogenide glassy filmsLyubin, V. / Klebanov, M. / Sfez, B. / Veinger, M. / Dror, R. / Lyubina, I. et al. | 2006
- 1602
-
Raman spectroscopy of cobalt ferrite nanocomposite in silica matrix prepared by sol–gel methodda Silva, S.W. / Pedroza, R.C. / Sartoratto, P.P.C. / Rezende, D.R. / da Silva Neto, A.V. / Soler, M.A.G. / Morais, P.C. et al. | 2006
- 1607
-
New evidence of light-induced structural changes detected in As–S glasses by photon energy dependent Raman spectroscopyHolomb, R. / Mateleshko, N. / Mitsa, V. / Johansson, P. / Matic, A. / Veres, M. et al. | 2006
- 1612
-
Why DVDs work the way they do: The nanometer-scale mechanism of phase change in Ge–Sb–Te alloysKolobov, Alexander V. / Fons, Paul / Tominaga, Junji / Uruga, T. et al. | 2006
- 1616
-
Reduction of the dark current in stabilized a-Se based X-ray detectorsBelev, G. / Kasap, S.O. et al. | 2006
- 1621
-
EXAFS study of amorphous Ge2Sb2Te5Baker, D.A. / Paesler, M.A. / Lucovsky, G. / Taylor, P.C. et al. | 2006
- 1624
-
Simulation of phase-change processes in non-volatile memory cellsPopov, A.I. / Savinov, I.S. / Voronkov, E.N. et al. | 2006
- 1628
-
Blue emitting thin-film electroluminescent devices utilizing Tm-doped ZnS nanocrystalsAdachi, D. / Haze, H. / Shirahase, H. / Toyama, T. / Okamoto, H. et al. | 2006
- 1632
-
New micro-optical devices for the IR based on three-component amorphous chalcogenide photoresistsEisenberg, N.P. / Manevich, M. / Arsh, A. / Klebanov, M. / Lyubin, V. et al. | 2006
- 1637
-
Selective wet-etching of undoped and silver photodoped amorphous thin films of chalcogenide glasses in inorganic alkaline solutionsOrava, J. / Wagner, T. / Krbal, M. / Kohoutek, T. / Vlcek, Mil. / Frumar, M. et al. | 2006
- 1641
-
Experimental observation of the density of localized trapping levels in organic semiconductorsSedghi, N. / Donaghy, D. / Raja, M. / Badriya, S. / Higgins, S.J. / Eccleston, W. et al. | 2006
- 1644
-
On the concentration and field dependences of the hopping mobility in disordered organic solidsBaranovskii, S.D. / Rubel, O. / Thomas, P. et al. | 2006
- 1648
-
The dynamics of ohmic contact formation in hydrazone doped polymersGoldie, D.M. et al. | 2006
- 1652
-
Effect of field cycling on the ac and dc properties of Alq3 deviceSilva, V.M. / Mendiratta, S.K. / Pereira, L. et al. | 2006
- 1656
-
Optical absorption by defect states in organic solar cellsGoris, L. / Poruba, A. / Purkrt, A. / Vandewal, K. / Swinnen, A. / Haeldermans, I. / Haenen, K. / Manca, J.V. / Vaněček, M. et al. | 2006
- 1660
-
Optical properties of amorphous polyazomethine thin filmsJarzabek, B. / Weszka, J. / Domanski, M. / Jurusik, J. / Cisowski, J. et al. | 2006
- 1663
-
Low level optical absorption measurements on organic semiconductorsStella, M. / Voz, C. / Puigdollers, J. / Rojas, F. / Fonrodona, M. / Escarré, J. / Asensi, J.M. / Bertomeu, J. / Andreu, J. et al. | 2006
- 1668
-
Absorption spectra of organic semiconductors in IR-range measured by constant photocurrent methodFenukhin, A.V. / Kazanskii, A.G. / Kolosko, A.G. / Terukov, E.I. / Ziminov, A.V. et al. | 2006
- 1671
-
Photo-carrier transport in disordered organic TPD filmsShimakawa, K. / Murata, K. / Matsumoto, S. / Naito, H. et al. | 2006
- 1675
-
Constant photocurrent method and time-of-flight measurements applied to polymer blendsWillekens, J. / Brinza, M. / Aernouts, T. / Poortmans, J. / Adriaenssens, G.J. et al. | 2006
- 1679
-
UV created weak and dangling bonds in aryl-substituted polysilylenesSchauer, F. / Kuřitka, I. / Sáha, P. / Nešpůrek, S. / Lipson, S. et al. | 2006
- 1683
-
Study of strong coupling between surface plasmon and exciton in an organic semiconductorBonnand, Clément / Bellessa, Joel / Plénet, Jean-Claude et al. | 2006
- 1686
-
Effect of ion concentration of ionomer in electron injection layer of polymer light-emitting devicesOlivati, C.A. / Carvalho, A.J.F. / Balogh, D.T. / von Seggern, H. / Faria, R.M. et al. | 2006
- 1691
-
Modelling the effect of non-planarity on luminescence energy of conjugated polymersCorreia, Helena M.G. / Barbosa, Hélder M.C. / Ramos, Marta M.D. et al. | 2006
- 1695
-
Monitoring of the initial degradation of oxadiazole based blue OLED’sNeitzert, H.C. / Ferrara, M. / Rubino, A. / Concilio, S. / Iannelli, P. / Vacca, P. / Ferrara, L. / Minarini, C. et al. | 2006
- 1700
-
Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistorsFlewitt, A.J. / Lin, S. / Milne, W.I. / Wehrspohn, R.B. / Powell, M.J. et al. | 2006
- 1704
-
Fabrication of amorphous silicon thin-film transistor by micro imprint lithographyChoo, Byoung-Kwon / Choi, Jung-Su / Kim, Se-Whan / Park, Kyu-Chang / Jang, Jin et al. | 2006
- 1708
-
Effect of channel length on the threshold voltage degradation of hydrogenated amorphous silicon TFTs due to the drain bias stressShin, Kwang-Sub / Lee, Jae-Hoon / Han, Sang-Myeon / Song, In-Hyuk / Han, Min-Koo et al. | 2006
- 1711
-
Reduction of bonding constraints by self-organization in gate dielectrics for a-Si:H thin film transistors (TFTs) and crystalline Si field effect transistors (FETs)Lucovsky, G. / Phillips, J.C. et al. | 2006
- 1715
-
A new instability phenomenon in microcrystalline silicon thin film transistorsLi, Juan / Wu, Chunya / Liu, Jianpin / Zhao, Shuyun / Meng, Zhiguo / Xiong, Shaozhen / Zhang, Lizhu et al. | 2006
- 1719
-
Hysteresis phenomenon of hydrogenated amorphous silicon thin film transistors for an active matrix organic light emitting diodeLee, Jae-Hoon / Nam, Woo-Jin / Shin, Kwang-Sub / Han, Min-Koo et al. | 2006
- 1723
-
Annealing temperature effects on the electrical characteristics of p-channel polysilicon thin film transistorsCuscunà, M. / Stracci, G. / Bonfiglietti, A. / di Gaspare, A. / Maiolo, L. / Pecora, A. / Mariucci, L. / Fortunato, G. et al. | 2006
- 1728
-
Improved microcrystalline silicon TFTsKandoussi, K. / Gaillard, A. / Simon, C. / Coulon, N. / Pier, T. / Mohammed-Brahim, T. et al. | 2006
- 1732
-
High hole and electron mobilities in nanocrystalline silicon thin-film transistorsLee, Czang-Ho / Sazonov, Andrei / Nathan, Arokia et al. | 2006
- 1737
-
Impedance study of the electrical properties of poly-Si thin film transistorsPereira, L. / Raniero, L. / Barquinha, P. / Fortunato, E. / Martins, R. et al. | 2006
- 1741
-
Application of metal induced unilaterally crystallized polycrystalline silicon thin-film transistor technology to system-on-glass displayWu, Chunya / Meng, Zhiguo / Xiong, Shaozhen / Wong, Man / Kwok, Hoi Sing et al. | 2006
- 1745
-
Dynamic characteristics of MICC polycrystalline thin film transistorsSon, Yong-Duck / Yang, Kyung-Dong / Bae, Byung-Seong / Park, Kyu-Chang / Jang, Jin et al. | 2006
- 1749
-
Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxideBarquinha, P. / Pimentel, A. / Marques, A. / Pereira, L. / Martins, R. / Fortunato, E. et al. | 2006
- 1753
-
Zinc tin oxide transistors on flexible substratesJackson, W.B. / Herman, G.S. / Hoffman, R.L. / Taussig, C. / Braymen, S. / Jeffery, F. / Hauschildt, J. et al. | 2006
- 1756
-
Effect of UV and visible light radiation on the electrical performances of transparent TFTs based on amorphous indium zinc oxideBarquinha, P. / Pimentel, A. / Marques, A. / Pereira, L. / Martins, R. / Fortunato, E. et al. | 2006
- 1761
-
The effect of water related traps on the reliability of organic based transistorsGomes, H.L. / Stallinga, P. / Cölle, M. / Biscarini, F. / de Leeuw, D.M. et al. | 2006
- 1765
-
Analysis of electrical characteristics of high performance pentacene thin-film transistors with PMMA buffer layerDe Angelis, F. / Mariucci, L. / Cipolloni, S. / Fortunato, G. et al. | 2006
- 1769
-
Submillimeter radius bendable organic field-effect transistorsSekitani, Tsuyoshi / Iba, Shingo / Kato, Yusaku / Noguchi, Yoshiaki / Sakurai, Takayasu / Someya, Takao et al. | 2006
- 1774
-
Environmental stability and electronic transport of pentacene thin film transistorsKnipp, D. / Muck, T. / Benor, A. / Wagner, V. et al. | 2006
- 1778
-
Copper phthalocyanine thin-film transistors with polymeric gate dielectricPuigdollers, J. / Voz, C. / Fonrodona, M. / Cheylan, S. / Stella, M. / Andreu, J. / Vetter, M. / Alcubilla, R. et al. | 2006
- 1783
-
Thin phase selective transparent detector for length measurementsBunte, E. / Jun, K.H. / Stiebig, H. et al. | 2006
- 1787
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Investigation of a-Si:H 1D MIS position sensitive detectors for application in 3D sensorsÁguas, H. / Pereira, L. / Raniero, L. / Costa, D. / Fortunato, E. / Martins, R. et al. | 2006
- 1792
-
Amorphous silicon position sensitive detectors applied to micropositioningContreras, J. / Baptista, C. / Ferreira, I. / Costa, D. / Pereira, S. / Águas, H. / Fortunato, E. / Martins, R. / Wierzbicki, R. / Heerlein, H. et al. | 2006
- 1797
-
Radiation hardness of amorphous silicon particle sensorsWyrsch, N. / Miazza, C. / Dunand, S. / Ballif, C. / Shah, A. / Despeisse, M. / Moraes, D. / Powolny, F. / Jarron, P. et al. | 2006
- 1801
-
The laser scanned photodiode: Theoretical and electrical models of the image sensorFernandes, M. / Vieira, M. / Martins, R. et al. | 2006
- 1805
-
a-SiC:H/a-Si:H tandem structure analysis for RGB color recognition in LSP devicesFantoni, A. / Fernandes, M. / Louro, P. / Vieira, M. et al. | 2006
- 1809
-
Light filtering in a-SIC:H multilayers stacked devices using the LSP techniqueVieira, M. / Fantoni, A. / Louro, P. / Fernandes, M. / Lavareda, G. / Carvalho, C.N. et al. | 2006
- 1813
-
Spice model for a laser scanned photodiode tricolor image sensorMartins, J. / Fernandes, M. / Fantoni, A. / Vieira, M. et al. | 2006
- 1818
-
Innovative window layer for amorphous silicon/amorphous silicon carbide UV sensorCaputo, D. / de Cesare, G. / Nascetti, A. / Tucci, M. et al. | 2006
- 1822
-
Thermally actuated a-SiC:H MEMS fabricated by a PECVD processRehder, G. / Carreño, M.N.P. et al. | 2006
- 1829
-
Noise characterization of a-Si:H pin diodesJankovec, Marko / Stiebig, Helmut / Smole, Franc / Topič, Marko et al. | 2006
- 1832
-
Characterization of a thick layer a-Si:H pixel detector with TFA technology using a scanning electron microscopeDespeisse, M. / Saramad, S. / Ballif, C. / Dunand, S. / Jarron, P. / Morse, J. / Snigireva, I. / Miazza, C. / Moraes, D. / Anelli, G. et al. | 2006
- 1837
-
Low leakage current a-Si:H/a-SiC:H n–i–p photodiode with Cr/a-SiNx front contactVygranenko, Yu. / Louro, P. / Vieira, M. / Chang, J.H. / Nathan, A. et al. | 2006
- 1841
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Nanostructure in the p-layer and its impacts on amorphous silicon solar cellsLiao, Xianbo / Du, Wenhui / Yang, Xiesen / Povolny, Henry / Xiang, Xianbi / Deng, Xunming / Sun, Kai et al. | 2006
- 1847
-
Fabrication of a n–p–p tunnel junction for a protocrystalline silicon multilayer/amorphous silicon tandem solar cellKwak, Joonghwan / Kwon, Seong Won / Lim, Koeng Su et al. | 2006
- 1851
-
Proton-induced degradation of thin-film microcrystalline silicon solar cellsMeillaud, F. / Vallat-Sauvain, E. / Niquille, X. / Dubey, M. / Shah, A. / Ballif, C. et al. | 2006
- 1855
-
Microcrystalline single and double junction silicon based solar cells entirely prepared by HWCVD on textured zinc oxide substrateKumar, P. / Kupich, M. / Bock, W. / Dusane, R.O. / Schroeder, B. et al. | 2006
- 1859
-
Improvement of open circuit voltage in microcrystalline silicon solar cells using hot wire buffer layersMai, Y. / Klein, S. / Carius, R. / Stiebig, H. / Houben, L. / Geng, X. / Finger, F. et al. | 2006
- 1863
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Influence of front electrode and back reflector electrode on the performances of microcrystalline silicon solar cellsZhang, X.D. / Zhao, Y. / Gao, Y.T. / Zhu, F. / Wei, C.C. / Chen, X.L. / Sun, J. / Hou, G.F. / Geng, X.H. / Xiong, S.Z. et al. | 2006
- 1868
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Influence on cell performance of bulk defect density in microcrystalline silicon grown by VHF PECVDGordijn, A. / Hodakova, L. / Rath, J.K. / Schropp, R.E.I. et al. | 2006
- 1872
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Thin p++ μc-Si layers for use as back surface field in p-type silicon heterojunction solar cellsGoldbach, H.D. / Bink, A. / Schropp, R.E.I. et al. | 2006
- 1876
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Sensitivity of the dark spectral response of thin film silicon based tandem solar cells on the defective regions in the intrinsic layersRubinelli, F.A. / Stolk, R.L. / Sturiale, A. / Rath, J.K. / Schropp, R.E.I. et al. | 2006
- 1880
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Study of nanostructured/amorphous silicon solar cell by impedance spectroscopy techniqueRaniero, L. / Fortunato, E. / Ferreira, I. / Martins, R. et al. | 2006
- 1884
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Band-edge electroluminescence from amorphous/crystalline silicon heterostructure solar cellsFuhs, W. / Laades, A. / Maydell, K.v. / Stangl, R. / Gusev, O.B. / Terukov, E.I. / Kazitsyna-Baranovski, S. / Weiser, G. et al. | 2006
- 1888
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Modulated photoluminescence studies for lifetime determination in amorphous-silicon passivated crystalline-silicon wafersBrüggemann, R. / Reynolds, S. et al. | 2006
- 1892
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Advanced optical design of tandem micromorph silicon solar cellsKrc, Janez / Smole, Franc / Topic, Marko et al. | 2006
- 1896
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Spectral analysis of the angular distribution function of back reflectors for thin film silicon solar cellsEscarré, J. / Villar, F. / Asensi, J.M. / Bertomeu, J. / Andreu, J. et al. | 2006
- 1900
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Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cellsHu, Zhihua / Liao, Xianbo / Diao, Hongwei / Cai, Yi / Zhang, Shibin / Fortunato, Elvira / Martins, Rodrigo et al. | 2006
- 1904
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Light-induced changes in diphasic nanocrystalline silicon films and solar cellsHao, Huiying / Liao, Xianbo / Zeng, Xiangbo / Diao, Hongwei / Xu, Ying / Kong, Guanglin et al. | 2006
- 1909
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Light induced degradation of microcrystalline silicon solar cellsWang, Yan / Han, Xiaoyan / Zhu, Feng / Hou, Guofu / Ren, Huizhi / Zhang, Kunde / Xue, Junming / Sun, Jian / Zhao, Ying / Geng, Xinhua et al. | 2006
- 1913
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Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition ratesGueunier-Farret, M.E. / Bazin, C. / Kleider, J.P. / Longeaud, C. / Bulkin, P. / Daineka, D. / Dao, T.H. / Roca i Cabarrocas, P. / Descamps, P. / Kervyn de Meerendre, T. et al. | 2006
- 1917
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Progress in amorphous and nanocrystalline silicon solar cellsGuha, Subhendu / Yang, Jeffrey et al. | 2006