Experimental demonstration of improved analog device performance of nanowire-TFETs (English)
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In:
Solid-State Electronics
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113
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179-183
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2015
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Experimental demonstration of improved analog device performance of nanowire-TFETs
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Contributors:Schulte-Braucks, Christian ( author ) / Richter, Simon ( author ) / Knoll, Lars ( author ) / Selmi, Luca ( author ) / Zhao, Qing-Tai ( author ) / Mantl, Siegfried ( author )
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Published in:Solid-State Electronics ; 113 ; 179-183
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Publisher:
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Publication date:2015-01-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 113
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Selected papers from ESSDERC 2014Bez, Roberto / Meneghesso, Gaudenzio / Pavan, Paolo / Zanoni, Enrico et al. | 2015
- 2
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FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integrationFenouillet-Beranger, C. / Previtali, B. / Batude, P. / Nemouchi, F. / Cassé, M. / Garros, X. / Tosti, L. / Rambal, N. / Lafond, D. / Dansas, H. et al. | 2015
- 9
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Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulationMarino, F.A. / Bisi, D. / Meneghini, M. / Verzellesi, G. / Zanoni, E. / Van Hove, M. / You, S. / Decoutere, S. / Marcon, D. / Stoffels, S. et al. | 2015
- 15
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Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTsRossetto, I. / Rampazzo, F. / Gerardin, S. / Meneghini, M. / Bagatin, M. / Zanandrea, A. / Dua, C. / di Forte-Poisson, M.-A. / Aubry, R. / Oualli, M. et al. | 2015
- 22
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Novel AlInN/GaN integrated circuits operating up to 500°CGaska, R. / Gaevski, M. / Jain, R. / Deng, J. / Islam, M. / Simin, G. / Shur, M. et al. | 2015
- 28
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Physics-based stability analysis of MOS transistorsFerrara, A. / Steeneken, P.G. / Boksteen, B.K. / Heringa, A. / Scholten, A.J. / Schmitz, J. / Hueting, R.J.E. et al. | 2015
- 35
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Local non invasive study of SiC diodes with abnormal electrical behaviorLeón, Javier / Perpiñà, Xavier / Vellvehi, Miquel / Jordà, Xavier / Godignon, Philippe et al. | 2015
- 42
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Dual Ground Plane EDMOS in 28nm FDSOI for 5V power management applicationsLitty, Antoine / Ortolland, Sylvie / Golanski, Dominique / Cristoloveanu, Sorin et al. | 2015
- 49
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High PAE high reliability AlN/GaN double heterostructureMedjdoub, F. / Zegaoui, M. / Linge, A. / Grimbert, B. / Silvestri, R. / Meneghini, M. / Meneghesso, G. / Zanoni, E. et al. | 2015
- 54
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A high-sensitivity 135GHz millimeter-wave imager by compact split-ring-resonator in 65-nm CMOSLi, Nan / Yu, Hao / Yang, Chang / Shang, Yang / Li, Xiuping / Liu, Xiong et al. | 2015
- 61
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Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulkCarrillo-Nuñez, Hamilton / Luisier, Mathieu / Schenk, Andreas et al. | 2015
- 68
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Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strainChang, Pengying / Liu, Xiaoyan / Zeng, Lang / Du, Gang et al. | 2015
- 73
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Extraction of roughness parameters at nanometer scale by Monte Carlo simulation of Critical Dimension Scanning Electron MicroscopyCiappa, M. / Ilgünsatiroglu, E. / Illarionov, A.Yu. et al. | 2015
- 79
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InGaAs inversion layers band structure, electrostatics, and mobility modeling based on 8 band theoryPham, Anh-Tuan / Jin, Seonghoon / Choi, Woosung / Lee, Myoung-Jae / Cho, Seong-Ho / Kim, Young-Tae / Lee, Keun-Ho / Park, Youngkwan et al. | 2015
- 86
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A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETsVillani, F. / Gnani, E. / Gnudi, A. / Reggiani, S. / Baccarani, G. et al. | 2015
- 92
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Compact model for parametric instability under arbitrary stress waveformAlagi, Filippo / Rossetti, Mattia / Stella, Roberto / Viganò, Emanuele / Raynaud, Philippe et al. | 2015
- 101
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Hybrid Systems in Foil (HySiF) exploiting ultra-thin flexible chipsHarendt, Christine / Kostelnik, Jan / Kugler, Andreas / Lorenz, Enno / Saller, Stefan / Schreivogel, Alina / Yu, Zili / Burghartz, Joachim N. et al. | 2015
- 109
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High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETsUmana-Membreno, G.A. / Chang, S.-J. / Bawedin, M. / Antoszewski, J. / Cristoloveanu, S. / Faraone, L. et al. | 2015
- 116
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Flexible and stretchable electronics for wearable health devicesvan den Brand, Jeroen / de Kok, Margreet / Koetse, Marc / Cauwe, Maarten / Verplancke, Rik / Bossuyt, Frederick / Jablonski, Michael / Vanfleteren, Jan et al. | 2015
- 121
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Thermal characterization and modeling of ultra-thin silicon chipsAlshahed, Muhammad / Yu, Zili / Rempp, Horst / Richter, Harald / Harendt, Christine / Burghartz, Joachim N. et al. | 2015
- 127
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Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodesBesnard, G. / Garros, X. / Andrieu, F. / Nguyen, P. / Van Den Daele, W. / Reynaud, P. / Schwarzenbach, W. / Delprat, D. / Bourdelle, K.K. / Reimbold, G. et al. | 2015
- 132
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Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRSPuglisi, Francesco Maria / Pavan, Paolo / Larcher, Luca / Padovani, Andrea et al. | 2015
- 138
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Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memoriesPaolucci, G.M. / Bertuccio, M. / Monzio Compagnoni, C. / Beltrami, S. / Spinelli, A.S. / Lacaita, A.L. / Visconti, A. et al. | 2015
- 144
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Self-consistent simulation on multiple activation energy of retention characteristics in charge trapping flash memoryPark, Sangyong / Choi, Seongwook / Jun, Kwang Sun / Kim, HuiJung / Rhee, SungMan / Park, Young June et al. | 2015
- 151
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Reliability study of organic complementary logic inverters using constant voltage stressWrachien, N. / Cester, A. / Lago, N. / Rizzo, A. / D’Alpaos, R. / Stefani, A. / Turatti, G. / Muccini, M. / Meneghesso, G. et al. | 2015
- 157
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Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contactsAyala, Christopher L. / Grogg, Daniel / Bazigos, Antonios / Bleiker, Simon J. / Fernandez-Bolaños, Montserrat / Niklaus, Frank / Hagleitner, Christoph et al. | 2015
- 167
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Two dimensional quantum mechanical simulation of low dimensional tunneling devicesAlper, C. / Palestri, P. / Lattanzio, L. / Padilla, J.L. / Ionescu, A.M. et al. | 2015
- 173
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Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistorsMorita, Yukinori / Mori, Takahiro / Migita, Shinji / Mizubayashi, Wataru / Fukuda, Koichi / Matsukawa, Takashi / Endo, Kazuhiko / O’uchi, Shin-ichi / Liu, Yongxun / Masahara, Meishoku et al. | 2015
- 179
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Experimental demonstration of improved analog device performance of nanowire-TFETsSchulte-Braucks, Christian / Richter, Simon / Knoll, Lars / Selmi, Luca / Zhao, Qing-Tai / Mantl, Siegfried et al. | 2015
- IFC
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Editorial Board| 2015