Influence of deposition pressure of CuTe electrode on the tantalum oxide-based resistive switching memory (English)
- New search for: Baek, Gwangho
- New search for: Yang, Seungmo
- New search for: Kim, Taeyoon
- New search for: Baek, Gwangho
- New search for: Yang, Seungmo
- New search for: Kim, Taeyoon
In:
Microelectronic Engineering
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215
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2019
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Influence of deposition pressure of CuTe electrode on the tantalum oxide-based resistive switching memory
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Contributors:
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Published in:
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Publisher:
- New search for: Elsevier B.V.
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Publication date:2019-05-04
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 215
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Determination of energy thresholds of electron excitations at semiconductor/insulator interfaces using trap-related displacement currentsAfanas'ev, V.V. / Schubert, J. / Neft, A. / Delie, G. / Shlyakhov, I. / Trepalin, V. / Houssa, M. / Stesmans, A. et al. | 2019
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Effect of molecular weight and concentration of polyethylene glycol on through‑silicon via filling by copperWang, Fuliang / Zhou, Kang / Zhang, Qinglong / Le, Yuping / Liu, Wei / Wang, Yan / Wang, Feng et al. | 2019
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Effects of fluorine based double plasma treatment on electrical and reliability characteristics of Ge pMOSFETsRuan, Dun-Bao / Chang-Liao, Kuei-Shu / Li, Ji-Syuan / Yi, Shih-Han / Liu, Guan-Ting / Chiu, Po-Chen / Li, Yan-Lin et al. | 2019
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Yttria-stabilized zirconia cross-point memristive devices for neuromorphic applicationsEmelyanov, A.V. / Nikiruy, K.E. / Demin, V.A. / Rylkov, V.V. / Belov, A.I. / Korolev, D.S. / Gryaznov, E.G. / Pavlov, D.A. / Gorshkov, O.N. / Mikhaylov, A.N. et al. | 2019
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Low-frequency noise in nanowire and planar III-V MOSFETsHellenbrand, Markus / Kilpi, Olli-Pekka / Svensson, Johannes / Lind, Erik / Wernersson, Lars-Erik et al. | 2019
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Ferroelectric HfZrO2 FETs for steep switch onsetChen, K.-T. / Liao, C.-Y. / Chen, H.-Y. / Lo, C. / Siang, G.-Y. / Lin, Y.-Y. / Tseng, Y.-J. / Chang, C. / Chueh, C.-Y. / Yang, Y.-J. et al. | 2019
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Modeling the interface traps-related low frequency noise in triple-gate SOI junctionless nanowire transistorsTrevisoli, Renan / Doria, Rodrigo Trevisoli / Barraud, Sylvain / Pavanello, Marcelo Antonio et al. | 2019
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Effect of interfacial InZnO conducting layer on electrical performance and bias stress stability of InAlZnO thin-film transistorsWoo, Kyoungwan / Lee, Se Hyeong / Lee, Sanghyun / Bak, So-Young / Kim, Yoo-Jong / Yi, Moonsuk et al. | 2019
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Tailoring second-order nonlinear optical effects in coupled quantum dot-metallic nanosphere structures using the Purcell effectEvangelou, Sofia et al. | 2019
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Theoretical studies on the switching mechanism of VMCO memoriesNakanishi, T. / Chokawa, K. / Araidai, M. / Nakayama, T. / Shiraishi, K. et al. | 2019
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Cu-alloying effect on structure stability of electrodeposited gold-based micro-cantilever evaluated by long-term vibration testNitta, Kyotaro / Chang, Tso-Fu Mark / Tachibana, Koichiro / Tang, Haochun / Chen, Chun-Yi / Iida, Shinichi / Yamane, Daisuke / Ito, Hiroyuki / Machida, Katsuyuki / Masu, Kazuya et al. | 2019
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Native filament-to-dielectric interfaces in phase change superlattice memoriesChen, Wenduo / Li, Huanglong et al. | 2019
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Mimicking the spike-timing dependent plasticity in HfO2-based memristors at multiple time scalesMaestro-Izquierdo, M. / Gonzalez, M.B. / Campabadal, F. et al. | 2019
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Ohmic contacts to n-type 3C-SiC using Cr/Ni/Au and Ni/Cr/Au metallizationsLeech, Patrick W. / Kibel, Martyn H. / Barlow, Anders J. / Reeves, Geoffrey K. / Holland, Anthony S. / Tanner, Philip et al. | 2019
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Detection of inhibitory effects in the generation of breakdown spots in HfO2-based MIM devicesMuñoz-Gorriz, J. / Monaghan, S. / Cherkaoui, K. / Suñé, J. / Hurley, P.K. / Miranda, E. et al. | 2019
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Implantable micro and nanophotonic devices: toward a new generation of neural interfacesPisanello, Ferruccio et al. | 2019
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C-reactive protein detection based on ISFET structure with gate dielectric SiO2-CeO2Kutova, Oksana / Dusheiko, Mykhailo / Klyui, Nickolai I. / Skryshevsky, Valeriy A. et al. | 2019
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Performance improvement of solution-processed InZnO thin film transistor with HfO2 vertical diffusion layerLee, Sanghyun / Lee, Se Hyeong / Woo, Kyoungwan / Kim, Yoo-Jong / Bak, So-Young / Yi, Moonsuk et al. | 2019
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RTN in GexSe1-x OTS selector devicesChai, Zheng / Zhang, Weidong / Degraeve, Robin / Zhang, Jian Fu / Marsland, John / Fantini, Andrea / Garbin, Daniele / Clima, Sergiu / Goux, Ludovic / Kar, Gouri Sankar et al. | 2019
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PDMS membrane filter with nano-slit array fabricated using three-dimensional silicon mold for the concentration of particles with bacterial size rangeNam, Young-Ho / Lee, Seung-Ki / Kim, Jong-Ho / Park, Jae-Hyoung et al. | 2019
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Microfluidic platform for cell analysis using through-polydimethylsiloxane micro-tip electrode arrayShin, Young-min / Ha, Joon-Geun / Kim, Yong-Kweon / Lee, Seung-Ki / Park, Jae-Hyoung et al. | 2019
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Design of a high performance CNTFET-based full adder cell applicable in: Carry ripple, carry select and carry skip addersTaheri Tari, Hani / Dabaghi Zarandi, Arezoo / Reshadinezhad, Mohammad Reza et al. | 2019
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Flexible graphene-based micro-capacitors using ultrafast laser ablationWang, Chien-Ping / Chou, Ching-Pong / Wang, Po-Chun / Chang, Tien-Li et al. | 2019
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Intense pulse light sintering of an Ag microparticle-based, highly stretchable, and conductive electrodeNam, Hyun Jin / Kang, Sun Young / Park, Jin Yeong / Choa, Sung-Hoon et al. | 2019
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Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer depositionOnaya, Takashi / Nabatame, Toshihide / Sawamoto, Naomi / Ohi, Akihiko / Ikeda, Naoki / Nagata, Takahiro / Ogura, Atsushi et al. | 2019
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An unsupervised and probabilistic approach to Pavlov's dog experiment with OxRAM devicesPedro, M. / Martin-Martinez, J. / Rodriguez, R. / Gonzalez, M.B. / Campabadal, F. / Nafria, M. et al. | 2019
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Nano-patterning of cuprate superconductors by masked He+ ion irradiation: 3-dimensional profiles of the local critical temperatureMletschnig, K.L. / Lang, W. et al. | 2019
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Integrated Field's metal microelectrodes based microfluidic impedance cytometry for cell-in-droplet quantificationPanwar, Jatin / Roy, Rahul et al. | 2019
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Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation frameworkGarzón, Esteban / De Rose, Raffaele / Crupi, Felice / Trojman, Lionel / Lanuzza, Marco et al. | 2019
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Room temperature bonding of Si and Si wafers by using Mo/Au nano-adhesion layersWang, Kang / Ruan, Kun / Hu, Wenbo / Wu, Shengli / Wang, Hongxing et al. | 2019
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Comparative investigation of electronic parameters of low voltage organic field-effect transistors with variable capacitance non-ionic gel gate dielectricsYardım, Tayfun / Yücedağ, İbrahim / Allı, Sema / Allı, Abdulkadir / Demir, Ahmet / Kösemen, Arif et al. | 2019
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A new technique to analyze RTN signals in resistive memoriesGonzález-Cordero, G. / González, M.B. / Campabadal, F. / Jiménez-Molinos, F. / Roldán, J.B. et al. | 2019
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1/f noise characteristics of AlGaN/GaN HEMTs with periodically carbon-doped GaN buffer layerIm, Ki-Sik / Choi, Jinseok / Hwang, Youngmin / An, Sung Jin / Roh, Jea-Seung / Kang, Seung-Hyeon / Lee, Jun-Hyeok / Lee, Jung-Hee et al. | 2019
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Fabrication of highly sensitive capacitive pressure sensors with porous PDMS dielectric layer via microwave treatmentKim, Yeongjun / Jang, Shin / Oh, Je Hoon et al. | 2019
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Thermally stable iridium contacts to highly doped p-In0:53Ga0:47As for indium phosphide double heterojunction bipolar transistorsBrahem, M. / Mogilatenko, A. / Stoppel, D. / Berger, D. / Hochheim, S. / Rentner, D. / Ostermay, I. / Reiner, M. / Boppel, S. / Nosaeva, K. et al. | 2019
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Influence of deposition pressure of CuTe electrode on the tantalum oxide-based resistive switching memoryBaek, Gwangho / Yang, Seungmo / Kim, Taeyoon et al. | 2019
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Influence of magnetic field on the operation of TiN/Ti/HfO2/W resistive memoriesMaldonado, D. / Roldán, A.M. / González, M.B. / Jiménez-Molinos, F. / Campabadal, F. / Roldán, J.B. et al. | 2019
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Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMTNifa, I. / Leroux, C. / Torres, A. / Charles, M. / Reimbold, G. / Ghibaudo, G. / Bano, E. et al. | 2019
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Smart glass electrochromic device fabrication of uniform tungsten oxide films from its powder synthesized by solution combustion methodEvecan, Dilek / Kaplan, Ş. Samet / Sönmez, M. Şeref / Yıldırım, Saffettin / Okutan, Merve / Deligöz, Hüseyin / Zayim, Esra et al. | 2019
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Effect of traps-to-gate tunnel communication on C-V characteristics of MIS capacitorsMazurak, A. / Jasiński, J. / Majkusiak, B. et al. | 2019
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Editorial| 2019
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Editorial Board| 2019
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SPICE model for the current-voltage characteristic of resistive switching devices including the snapback effectMiranda, E. / Muñoz-Gorriz, J. / Suñe, J. / Fröhlich, K. et al. | 2019
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A detailed study of the gate/drain voltage dependence of RTN in bulk pMOS transistorsSaraza-Canflanca, P. / Martin-Martinez, J. / Castro-Lopez, R. / Roca, E. / Rodriguez, R. / Nafria, M. / Fernandez, F.V. et al. | 2019
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Controlling the intermediate conductance states in RRAM devices for synaptic applicationsGarcía, H. / Ossorio, O.G. / Dueñas, S. / Castán, H. et al. | 2019
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Corrigendum to “Process optimization of parameterized single shot method for a rapid production of photon sireve with direct write lithography” Microelectronic Engineering, Volume 209, 15 March 2019, Pages 41–48Rüzgar, Kemal / Bacıoğlu, Akın et al. | 2019
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Material relaxation in chalcogenide OTS SELECTOR materialsClima, S. / Garbin, D. / Devulder, W. / Keukelier, J. / Opsomer, K. / Goux, L. / Kar, G.S. / Pourtois, G. et al. | 2019