Growth and characterization of nitrogen-phosphorus hybrid passivated gate oxide film on N-type 4H-SiC epilayer (English)
- New search for: Jia, Yifan
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https://orcid.org/0000-0003-2417-5203
- New search for: Lv, Hongliang
- New search for: Tang, Xiaoyan
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- New search for: Song, Qingwen
- New search for: Zhang, Yimen
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- New search for: Dimitrijev, Sima
- New search for: Han, Jisheng
- New search for: Jia, Yifan
- New search for: Lv, Hongliang
- New search for: Tang, Xiaoyan
- New search for: Han, Chao
- New search for: Song, Qingwen
- New search for: Zhang, Yimen
- New search for: Zhang, Yuming
- New search for: Dimitrijev, Sima
- New search for: Han, Jisheng
In:
Journal of Crystal Growth
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507
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98-102
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2018
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Growth and characterization of nitrogen-phosphorus hybrid passivated gate oxide film on N-type 4H-SiC epilayer
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Contributors:Jia, Yifan ( author ) / Lv, Hongliang ( author ) / Tang, Xiaoyan ( author ) / Han, Chao ( author ) / Song, Qingwen ( author ) / Zhang, Yimen ( author ) / Zhang, Yuming ( author ) / Dimitrijev, Sima ( author ) / Han, Jisheng ( author )
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Published in:Journal of Crystal Growth ; 507 ; 98-102
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Publisher:
- New search for: Elsevier B.V.
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Publication date:2018-01-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 507
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Effects of succinic acid and adipic acid on the metastable width of glutaric acid in acetic acidHuang, Yulan / Lu, Jingjing / Chen, Honglin / Du, Weiwei / Wang, Xunqiu et al. | 2018
- 10
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Ternary Pb1 −xCdxSe films grown by molecular beam epitaxy on GaAs/ZnTe hybrid substratesChusnutdinow, S. / Szot, M. / Schreyeck, S. / Aleszkiewicz, M. / Kucherenko, I.V. / Muratov, A.V. / Yakovlev, V.A. / Wojtowicz, T. / Karczewski, G. et al. | 2018
- 16
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Scintillation properties and increased vacancy formation in cerium and calcium co-doped yttrium aluminum garnetDickens, Peter T. / Haven, Drew T. / Friedrich, Stephan / Lynn, Kelvin G. et al. | 2018
- 23
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Investigation on Cd1-xMnxTe grown by traveling heater method with redissolution process and Te inclusions on carrier transport uniformity of detectorShi, Haozhi / Zhang, Jijun / Ling, Liwen / Zhao, Shuhao / Min, Jiahua / Liang, Xiaoyan / Huang, Jian / Tang, Ke / Wang, Linjun et al. | 2018
- 31
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Na2Mo2O7 scintillating crystals: Growth, morphology and optical propertiesGrigorieva, Veronika D. / Shlegel, Vladimir N. / Ivannikova, Nina V. / Bekker, Tatyana B. / Yelisseyev, Alexander P. / Kuznetsov, Artem B. et al. | 2018
- 38
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The effect of solution conditions on the crystal morphology of β-HMX by molecular dynamics simulationsLi, Jing / Jin, Shaohua / Lan, Guanchao / Xu, Zishuai / Wu, Nana / Chen, Shusen / Li, Lijie et al. | 2018
- 46
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Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on siliconMuhowski, A.J. / Bogh, C.L. / Heise, R.L. / Boggess, T.F. / Prineas, J.P. et al. | 2018
- 50
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Numerical simulation of heat and mass transfer during Czochralski silicon crystal growth under the application of crystal-crucible counter- and iso-rotationsNguyen, Thi Hoai Thu / Chen, Jyh Chen / Hu, Chieh / Chen, Chun Hung et al. | 2018
- 58
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Habit prediction of 3,4,5-trinitro-1H-pyrazole in four solvent mediums using a molecular dynamics simulationChen, Lizhen / She, Chongchong / Pan, Hongxia / Wang, Jianlong / Cao, Duanlin et al. | 2018
- 65
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Molecular beam epitaxy and characterization of AlGaN nanowire ultraviolet light emitting diodes on Al coated Si (0 0 1) substrateWu, Yuanpeng / Wang, Yongjie / Sun, Kai / Mi, Zetian et al. | 2018
- 70
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X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafersMeduňa, Mojmír / Kreiliger, Thomas / Mauceri, Marco / Puglisi, Marco / Mancarella, Fulvio / La Via, Francesco / Crippa, Danilo / Miglio, Leo / Känel, Hans von et al. | 2018
- 77
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Physical properties of Ga-Fe-N system relevant for crystallization of GaN – Initial studiesSadovyi, B. / Sadovyi, P. / Petrusha, I. / Dziecielewski, I. / Porowski, S. / Turkevich, V. / Nikolenko, A. / Tsykaniuk, B. / Strelchuk, V. / Grzegory, I. et al. | 2018
- 87
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Molecular beam epitaxy and characterization of Al0.6Ga0.4N epilayersLaleyan, David Arto / Liu, Xianhe / Pandey, Ayush / Shin, Walter Jin / Reid, Eric T. / Mashooq, Kishwar / Soltani, Mohammad / Mi, Zetian et al. | 2018
- 93
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MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly-bonded InP/Si substrateSugiyama, Hirokazu / Uchida, Kazuki / Han, Xu / Periyanayagam, Gandhi Kallarasan / Aikawa, Masaki / Hayasaka, Natsuki / Shimomura, Kazuhiko et al. | 2018
- 98
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Growth and characterization of nitrogen-phosphorus hybrid passivated gate oxide film on N-type 4H-SiC epilayerJia, Yifan / Lv, Hongliang / Tang, Xiaoyan / Han, Chao / Song, Qingwen / Zhang, Yimen / Zhang, Yuming / Dimitrijev, Sima / Han, Jisheng et al. | 2018
- 103
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Epitaxial lateral overgrowth of GaN on nano-cavity patterned sapphire substratesLee, Donghyun / Lee, Seungmin / Kim, Giwoong / Kim, Jongmyeong / Jang, Jeonghwan / Oh, Jehong / Moon, Daeyoung / Park, Yongjo / Yoon, Euijoon et al. | 2018
- 109
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A correlation study of substrate and epitaxial wafer with 4H-N type silicon carbideZhao, Lixia / Wu, Huiwang et al. | 2018
- 113
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Homoepitaxy of Ge on ozone-treated Ge (1 0 0) substrate by ultra-high vacuum chemical vapor depositionWang, Jiaqi / Shen, Limeng / Lin, Guangyang / Wang, Jianyuan / Xu, Jianfang / Chen, Songyan / Xiang, Gang / Li, Cheng et al. | 2018
- 118
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Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimizationBecerra, Daniel L. / Cohen, Daniel A. / Mehari, Shlomo / DenBaars, Steven P. / Nakamura, Shuji et al. | 2018
- 124
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Kinetics of plaster hydration and structure of gypsum: Experiments and kinetic Monte Carlo simulations with added gypsum seedsMorgado, G. / Masurel, L. / Rhodes, Z. / Lespiat, R. / Rétot, H. / Lemarchand, A. et al. | 2018
- 134
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Design evolution of MOVPE reactors for improved productivity: Adaptation to nitrides and feedback to classical III-VMatsumoto, Koh / Ubukata, Akinori / Guanxi, Piao / Yano, Yoshiki / Tabuchi, Toshiya / Koseki, Shuichi / Sodabanlu, Hassanet / Watanabe, Kentaro / Nakano, Yoshiaki / Sugiyama, Masakazu et al. | 2018
- 139
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Understanding and controlling Ga contamination in InAlN barrier layersMrad, M. / Charles, M. / Mazel, Y. / Nolot, E. / Kanyandekwe, J. / Veillerot, M. / Ferret, P. / Feuillet, G. et al. | 2018
- 143
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Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layersNiu, Yingxi / Tang, Xiaoyan / Wu, Pengfei / Kong, Lingyi / Li, Yun / Xia, Jinghua / Tian, Honglin / Tian, Liang / Tian, Lixin / Zhang, Wenting et al. | 2018
- 146
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A kinetic study of crystallization process of imatinib mesylate with polymorphic transformation phenomenonLin, Mengxing / Wu, Yuanyi / Rohani, Sohrab et al. | 2018
- 154
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In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystalsMiyamura, Y. / Harada, H. / Liu, X. / Nakano, S. / Nishizawa, S. / Kakimoto, K. et al. | 2018
- 157
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Dependence of optimum V/III ratio on substrate orientation, and influence of buffer layer on MOVPE grown InSb/GaSb quantum dotsAhia, Chinedu Christian / Tile, Ngcali / Botha, Johannes Reinhardt et al. | 2018
- 163
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Molecular beam epitaxy growth of Mn4− xNixN thin films on MgO(0 0 1) substrates and their magnetic propertiesKomori, Taro / Anzai, Akihito / Gushi, Toshiki / Toko, Kaoru / Suemasu, Takashi et al. | 2018
- 168
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Synthesis of high purity ammonium alum crystallized from solutions containing impuritiesYou, Shaowei / Guo, Tao / Liu, Pengfei / Mao, Xiang / Zhang, Yifei / Zhang, Yi et al. | 2018
- 175
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The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substratesYan, G.G. / Liu, X.F. / Shen, Z.W. / Zhao, W.S. / Wang, L. / Cui, Y.X. / Li, J.T. / Zhang, F. / Sun, G.S. / Zeng, Y.P. et al. | 2018
- 180
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Study of indium and antimony incorporation into SnS2 single crystalsKhimani, Ankurkumar J. / Chaki, Sunil H. / Deshpande, M.P. / Tailor, Jiten P. et al. | 2018
- 189
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Hydrothermal synthesis of aluminum-doped zincophosphate large single crystal with different morphologyShi, W.T. / Sun, D.L. / Chen, J.Q. / Sun, L. / Chu, S.W. / Xi, Z. / Zeng, Yu-Jia / Xu, X.T. / Ruan, S.C. et al. | 2018
- 196
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Effects of 6H-SiC substrate polarity on the morphology and microstructure of AlN films by HVPE with varied V/III ratioChen, Jing Jing / Su, Xu Jun / Huang, Jun / Niu, Mu Tong / Xu, Ke et al. | 2018
- 200
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Influence of the growth conditions of LT-AlN on quality of HT-AlN growth on Si (1 1 1) by metalorganic chemical vapor depositionChernykh, M.Y. / Ezubchenko, I.S. / Mayboroda, I.O. / Zanaveskin, M.L. et al. | 2018
- 205
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How to obtain metal-polar untwinned high-quality (1 0 −1 3) GaN on m-plane sapphireHu, Nan / Dinh, Duc V. / Pristovsek, Markus / Honda, Yoshio / Amano, Hiroshi et al. | 2018
- 209
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Growth of PrCo2 single crystals with a Boron Nitride crucibleLiu, Yong / Lin, Qisheng / Pathak, Arjun K. / Paudyal, Durga / Lograsso, Thomas A. et al. | 2018
- 213
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The impact of sulfite ions on barium sulfate crystallizationJones, Franca / Ogden, Mark I. / Radomirovic, Tomoko et al. | 2018
- 220
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Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on SiliconCordier, Yvon / Comyn, Rémi / Tottereau, Olivier / Frayssinet, Eric / Portail, Marc / Nemoz, Maud et al. | 2018
- 226
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Selective-area growth of magnetic MnAs nanodisks on Si (1 1 1) substrates using multiple types of dielectric masksHoriguchi, Ryoma / Hara, Shinjiro / Iida, Masaya / Morita, Kohei et al. | 2018
- 232
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Secondary nucleation and growth kinetics of aluminum hydroxide crystallization from potassium aluminate solutionXue, Jin / Liu, Chenglin / Luo, Mengjie / Lin, Mengxing / Jiang, Youfa / Li, Ping / Yu, Jianguo / Rohani, Sohrab et al. | 2018
- 241
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Magnetization characterization of MnAs nanoclusters at close range in bended MnAs/InAs heterojunction nanowiresKodaira, Ryutaro / Horiguchi, Ryoma / Hara, Shinjiro et al. | 2018
- 246
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Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent propertiesDominec, Filip / Hospodková, Alice / Hubáček, Tomáš / Zíková, Markéta / Pangrác, Jiří / Kuldová, Karla / Vetushka, Aliaksei / Hulicius, Eduard et al. | 2018
- 251
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Determination of the phase relation of a LixLa(1− x )/3NbO3 system by the slow cooling floating zone methodTanaka, Isao / Yoshihara, Risa / Nakazawa, Chie / Nagao, Masanori / Watauchi, Satoshi et al. | 2018
- 255
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Highly tin doped GaAs at low growth temperatures using tetraethyl tin by metal organic vapor phase epitaxyElleuch, Omar / Lekhal, Kaddour / Guan, Yingxin / Kuech, Thomas F. et al. | 2018
- 260
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The effect of crystal-solvent interaction on crystal growth and morphologyLi, Jing-Wen / Zhang, Shu-Hai / Gou, Rui-Jun / Han, Gang / Chen, Ming-Hua et al. | 2018
- 270
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The role of higher coformer stoichiometry ratio in pharmaceutical cocrystals for improving their solid-state properties: The cocrystals of progesterone and 4-hydroxybenzoic acidSamipillai, Marivel / Rohani, Sohrab et al. | 2018
- 283
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Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor depositionLiu, X.F. / Yan, G.G. / Shen, Z.W. / Wen, Z.X. / Chen, J. / He, Y.W. / Zhao, W.S. / Wang, L. / Guan, M. / Zhang, F. et al. | 2018
- 288
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Effect of buffer layer structure on the structural properties of GaAs epitaxial layers grown on GaP substratesImaizumi, Mitsuru / Hirotani, Masumi / Soga, Tetsuo / Umeno, Masayoshi et al. | 2018
- 295
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Influence of quartz on silicon incorporation in HVPE grown AlNFleischmann, Simon / Richter, Eberhard / Mogilatenko, Anna / Weyers, Markus / Tränkle, Günther et al. | 2018
- 299
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The influence of travelling magnetic field on phosphorus distribution in n-type multi-crystalline siliconBuchovska, Iryna / Dropka, Natasha / Kayser, Stefan / Kiessling, Frank M. et al. | 2018
- 307
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Improved crystal quality of semipolar AlN by employing a thermal annealing technique with MOVPEJo, Masafumi / Itokazu, Yuri / Kuwaba, Shunsuke / Hirayama, Hideki et al. | 2018
- 310
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Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interfaceHubáček, T. / Hospodková, A. / Oswald, J. / Kuldová, K. / Pangrác, J. / Zíková, M. / Hájek, F. / Dominec, F. / Florini, N. / Komninou, Ph. et al. | 2018
- 316
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Characteristics of aluminum nitride films on hexagonal boron nitride buffer layers using various growth methods through metal organic chemical vapor depositionHan, Min / Ryu, Beo Deul / Ko, Kang Bok / Jo, Chang Hee / Lim, Chang-hyun / Cuong, Tran Viet / Han, Nam / Hong, Chang-Hee et al. | 2018
- 321
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Growth and fluorescence characteristics of Er:LuAG laser crystalsQuan, Jiliang / Yang, Xin / Long, Siwei / Yang, Mingming / Ma, Decai / Huang, Jinqiang / Guo, Yongwen / Zhu, Yunzhong / Wang, Biao et al. | 2018
- 327
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Morphology of diamond single crystals grown in the Fe-Co-Mg-C systemKovalenko, T.V. / Lysakovskyi, V.V. / Kvasnytsya, V.M. / Ivakhnenko, S.O. / Suprun, O.M. / Burchenia, A.V. et al. | 2018
- 332
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Growth and characterization of Cs2LiLaCl6:Ce single crystalsZhu, Hebing / Zhang, Peng / Pan, Shangke / Li, Huanying / Jiang, Yong / Zhang, Jianyu / Zhang, Zheng / Ren, Guohao / Pan, Jianguo / Chen, Hongbing et al. | 2018
- 338
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Understanding Al incorporation into 4H-SiC during epitaxyFerro, Gabriel / Chaussende, Didier / Tsavdaris, Nikolaos et al. | 2018
- 344
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Continuous crystallization of α-form L-glutamic acid in an MSMPR-Tubular crystallizer systemGao, Zhenguo / Wu, Yuanyi / Gong, Junbo / Wang, Jingkang / Rohani, Sohrab et al. | 2018
- 352
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MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substratesSundaram, Suresh / Li, Xin / Alam, Saiful / Ayari, Taha / Halfaya, Yacine / Patriarche, Gilles / Voss, Paul L. / Salvestrini, Jean Paul / Ougazzaden, Abdallah et al. | 2018
- 357
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Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(1 0 0) substrate by molecular beam epitaxyMachida, Ryuto / Akahane, Kouichi / Watanabe, Issei / Hara, Shinsuke / Fujikawa, Sachie / Kasamatsu, Akifumi / Fujishiro, Hiroki I. et al. | 2018
- 362
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Crystallization of the polymer induced liquid mineral precursor in the constraint nanoporesLi, YaLi / Zhu, Jianhua / Cui, Mingfang / Wang, Jun / Zha, Juanjuan et al. | 2018
- 370
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Initial stages of the epitaxial growth of AlN on GaN (1 1 1)-(2 × 2) surface: Ab-initio studiesMoreno, J.C. / Camacho-Garcia, J.H. / Ponce-Pérez, R. / Sánchez-Ochoa, F. / Romero de la Cruz, María Teresa / Cocoletzi, Gregorio H. et al. | 2018
- 379
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Epitaxial growth of undoped and Li-doped NiO thin films on α-Al2O3 substrates by mist chemical vapor depositionIkenoue, Takumi / Inoue, Junki / Miyake, Masao / Hirato, Tetsuji et al. | 2018
- 384
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Atomic step-flow epitaxy of low defect InGaAs islands on Si(1 1 1) by micro-channel selective area MOVPEFu, Yufeng / Otake, Nobuyuki / Tachino, Yoshihide / Watanabe, Tohma / Sugiyama, Masakazu et al. | 2018
- 389
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Structural characteristics of m-plane AlN substrates and homoepitaxial filmsBobea Graziano, Milena / Bryan, Isaac / Bryan, Zachary / Kirste, Ronny / Tweedie, James / Collazo, Ramon / Sitar, Zlatko et al. | 2018
- 395
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Study on the growth kinetics of Al2O3 columnar crystal in Al2O3 matrix composite ceramics prepared by microwave sinteringLü, Chen / Ai, Yunlong / Yu, Qingling / Chen, Weihua / He, Wen / Zhang, Jianjun / Min, Xinxin et al. | 2018
- 402
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Assessing epitaxial regrowth material quality on a micro-transfer printed GaAs substrateSchmieder, Kenneth J. / Lumb, Matthew P. / Bennett, Mitchell F. / Haughn, Chelsea R. / Mack, Shawn / Yakes, Michael K. / Maximenko, Sergey I. / Walters, Robert J. et al. | 2018
- 406
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Laser-diode-heated floating-zone crystal growth of ErVO3Telang, Prachi / Maljuk, Andrey / Rout, Dibyata / Hu, Rongwei / Skoulatos, Markos / Karmakar, Koushik / Seiro, Silvia / Roessli, Bertrand / Stuhr, Uwe / Büchner, Bernd et al. | 2018
- 413
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Isomorphous substitutions in sillenite-family single-crystal Bi24(M 2- xMn4+ x)O40 solid solutions (M = Al3+, Fe3+, Ge4+, Ti4+, Cr4+, V5+)Kuz'micheva, Galina M. / Mel'nikova, Tatyana I. / Kaurova, Irina A. / Zubavichus, Yan V. / Nikolaychik, Vladimir I. et al. | 2018
- 421
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First-principle study of ammonia decomposition and nitrogen incorporation on the GaN surface in metal organic vapor phase epitaxyBui, Kieu My / Iwata, Jun-Ichi / Kangawa, Yoshihiro / Shiraishi, Kenji / Shigeta, Yasuteru / Oshiyama, Atsushi et al. | 2018
- 425
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Post-solidification effects in directionally solidified ternary eutectic --Steinmetz, Philipp / Gadkari, Saurabh / Genau, Amber et al. | 2018
- 437
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Fabrication of submicron active-region-buried GaN hexagonal frustum structures by selective area growth for directional micro-LEDsKumagai, Naoto / Takahashi, Tokio / Yamada, Hisashi / Cong, Guangwei / Wang, Xue-Lun / Shimizu, Mitsuaki et al. | 2018
- 442
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Development of high power SiC devices for rail traction power systemsLiu, Guoyou / Wu, Yibo / Li, Kongjing / Wang, Yangang / Li, ChengZhan et al. | 2018
- 453
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Uniformly valid asymptotic solutions of rod eutectic growth in directional solidification for liquid-solid interface slopes of small orderLi, Xiang-Ming / Chen, Xiang-Kai / Xu, Fei et al. | 2018
- 459
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Erratum to “Selective crystal growth of polymorphs and crystal-to-crystal thermal phase transition of non-peripherally alkyl-substituted phthalocyanine and tetrabenzotriazaporphyrin” [Journal of Crystal Growth 468(2017)804–809]Ohmori, Masashi / Nakano, Chika / Fujii, Akihiko / Shimizu, Yo / Ozaki, Masanori et al. | 2019
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Editorial Board| 2019