Recent progress in nanostructure fabrication using MBE (English)
- New search for: Ploog, Klaus H.
- New search for: Ploog, Klaus H.
In:
Journal of Crystal Growth
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301-302
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10-15
;
2006
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Recent progress in nanostructure fabrication using MBE
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Contributors:Ploog, Klaus H. ( author )
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Published in:Journal of Crystal Growth ; 301-302 ; 10-15
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Publisher:
- New search for: Elsevier B.V.
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Publication date:2006-01-01
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Size:6 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 301-302
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Preface| 2007
- 4
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Controlling electronic properties of epitaxial nanocomposites of dissimilar materialsHanson, M.P. / Bank, S.R. / Zide, J.M.O. / Zimmerman, J.D. / Gossard, A.C. et al. | 2007
- 10
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Recent progress in nanostructure fabrication using MBEPloog, Klaus H. et al. | 2006
- 16
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Quantitative structure determination of GaAs(001) under typical MBE conditions using synchrotron X-ray diffractionTakahasi, M. / Mizuki, J. et al. | 2006
- 22
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Structure transition between two GaAs(001)-c(4x4) surface reconstructions in As4 fluxArai, T. / Suzuki, M. / Ueno, Y. / Okabayashi, J. / Yoshino, J. et al. | 2007
- 22
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Structure transition between two GaAs(001)-c(4×4) surface reconstructions in As4 fluxArai, T. / Suzuki, M. / Ueno, Y. / Okabayashi, J. / Yoshino, J. et al. | 2006
- 26
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Investigation on GaAs(001) surface treated by As-free high temperature surface cleaning methodIsomura, N. / Tsukamoto, S. / Iizuka, K. / Arakawa, Y. et al. | 2006
- 30
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Growth simulation of fish-like pit pattern on GaAs(110)Ishii, A. / Oda, Y. et al. | 2007
- 34
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Atomically controlled doping of nitrogen on GaAs(001) surfacesShimizu, N. / Inoue, T. / Kita, T. / Wada, O. et al. | 2006
- 38
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RHEED metrology of Stranski–Krastanov quantum dotsFeltrin, A. / Freundlich, A. et al. | 2007
- 42
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Formation mechanism of rotational twins in beam-induced lateral epitaxy on (111)B GaAs substrateNaritsuka, Shigeya / Matsuoka, Sota / Kondo, Toshiyuki / Saitoh, Koji / Suzuki, Takashi / Yamamoto, Yo / Maruyama, Takahiro et al. | 2007
- 47
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Atomic arrangement in a CuPt-B-type ordered GaAsSb layer grown by molecular beam epitaxy observed by cross sectional scanning tunneling microscopeGomyo, A. / Ohkouchi, S. / Kawamura, Y. et al. | 2006
- 50
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Endotaxy of MnSb into GaSbBraun, Wolfgang / Trampert, Achim / Kaganer, Vladimir M. / Jenichen, Bernd / Satapathy, Dillip K. / Ploog, Klaus H. et al. | 2006
- 54
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Atmospheric oxygen in Mn doped GaAs/GaAs(001) thin films grown by molecular beam epitaxyXu, J.F. / Thibado, P.M. / Awo-Affouda, C. / Moore, R. / LaBella, V.P. et al. | 2007
- 58
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Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrixSemenov, Alexey / Lyublinskaya, Olga G. / Solov’ev, Victor A. / Meltser, Boris Ya. / Ivanov, Sergey V. et al. | 2006
- 62
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A simple approach to temperature dependence of strain energy: Application to GaN-based semiconductorsIto, Tomonori / Araki, Tatsuya / Akiyama, Toru / Nakamura, Kohji et al. | 2006
- 67
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Compound-source molecular beam epitaxy of GaN using GaN powder and ammonia as sourcesSawada, M. / Sawadaishi, M. / Yamamoto, H. / Arai, M. / Honda, T. et al. | 2006
- 71
-
In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxyCordier, Y. / Baron, N. / Semond, F. / Massies, J. / Binetti, M. / Henninger, B. / Besendahl, M. / Zettler, T. et al. | 2006
- 75
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Ab initio-based approach on initial growth kinetics of GaN on GaN (001)Kangawa, Y. / Matsuo, Y. / Akiyama, T. / Ito, T. / Shiraishi, K. / Kakimoto, K. et al. | 2006
- 79
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Real-time in-situ flux monitoring by wavelength-modulated atomic absorption spectroscopy in molecular beam epitaxy: Application to Ga flux measurementVignaud, D. / Mollot, F. et al. | 2006
- 84
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P-cracker cell temperature effects on the optical properties of AlGaInP:Be layers grown by SSMBESoubervielle-Montalvo, C. / Hernández, I.C. / Sheldon, M. / Gorbatchev, A.Yu. / Rodríguez, A.G. / de Anda, F. / Zamora-Peredo, L. / Méndez-García, V.H. et al. | 2007
- 88
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Substrate temperature measurement using a commercial band-edge detection systemFarrer, I. / Harris, J.J. / Thomson, R. / Barlett, D. / Taylor, C.A. / Ritchie, D.A. et al. | 2007
- 93
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Influence of interface interruption on spin relaxation in GaAs (110) quantum wellsLiu, L.S. / Wang, W.X. / Li, Z.H. / Liu, B.L. / Zhao, H.M. / Wang, J. / Gao, H.C. / Jiang, Z.W. / Liu, S. / Chen, H. et al. | 2006
- 97
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Imaging of subbands in InAs/GaSb double quantum wells by low-temperature scanning tunneling spectroscopySuzuki, K. / Kanisawa, K. / Perraud, S. / Ueki, M. / Takashina, K. / Hirayama, Y. et al. | 2007
- 101
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Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxyXu, J.F. / Liu, S.W. / Xiao, Min / Thibado, P.M. et al. | 2006
- 105
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Thermal imaging of wafer temperature in MBE using a digital cameraJackson, A.W. / Gossard, A.C. et al. | 2007
- 109
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MBE growth of TlInGaAs/TlInP/InP SCH LD structures and their laser operation with low-temperature variation of lasing wavelengthFujiwara, A. / Krishnamurthy, D. / Matsumoto, T. / Hasegawa, S. / Asahi, H. et al. | 2006
- 113
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Effects of annealing on TlGaAs/GaAs single hetero structures and TlGaAs/GaAs multiple quantum well structures grown by low-temperature MBEOhnishi, K. / Kanda, T. / Kiriyama, H. / Kajikawa, Y. et al. | 2006
- 117
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Thallium incorporation during TlInAs growth by low-temperature MBETakushima, M. / Kobayashi, N. / Yamashita, Y. / Kajikawa, Y. / Satou, Y. / Tanaka, Y. / Sumida, N. et al. | 2006
- 121
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Temperature dependence of Bi behavior in MBE growth of InGaAs/InPFeng, Gan / Oe, Kunishige / Yoshimoto, Masahiro et al. | 2007
- 125
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Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 micrometer grown by molecular beam epitaxyNi, H.Q. / Niu, Z.C. / Fang, Z.D. / Huang, S.S. / Zhang, S.Y. / Wu, D.H. / Shun, Z. / Han, Q. / Wu, R.H. et al. | 2007
- 125
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Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3– grown by molecular beam epitaxyNi, H.Q. / Niu, Z.C. / Fang, Z.D. / Huang, S.S. / Zhang, S.Y. / Wu, D.H. / Shun, Z. / Han, Q. / Wu, R.H. et al. | 2006
- 125
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Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3- Formula Not Shown grown by molecular beam epitaxyNi, H. Q. / Niu, Z. C. / Fang, Z. D. / Huang, S. S. / Zhang, S. Y. / Wu, D. H. / Shun, Z. / Han, Q. / Wu, R. H. et al. | 2007
- 129
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Key issues associated with low threshold current density for InP-based quantum cascade lasersLi, A.Z. / Li, H. / Xu, G.Y. / Zhang, Y.G. / Lin, C. / Zhu, C. / Wei, L. / Li, Y.Y. et al. | 2007
- 134
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InAsPSb quaternary alloy grown by gas source molecular beam epitaxyTsai, Gene / Wang, De-Lun / Wu, Chia-En / Wu, Chen-Jun / Lin, Yan-Ting / Lin, Hao-Hsiung et al. | 2006
- 139
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Development of GaAs-based MOSFET using molecular beam epitaxyDroopad, Ravi / Rajagopalan, Karthik / Abrokwah, Jon / Adams, Liz / England, Nate / Uebelhoer, Dave / Fejes, Peter / Zurcher, Peter / Passlack, Matthias et al. | 2006
- 145
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Growth and subband structure determination of high mobility hole gases on (001) and (110) GaAsGerl, C. / Bauer, J. / Wegscheider, W. et al. | 2006
- 148
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Dramatic dependence of the Fermi level pinning strength on crystal orientation at clean surfaces of n-type In0.53Ga0.47As grown by molecular beam epitaxyPerraud, Simon / Kanisawa, Kiyoshi / Wang, Zhao-Zhong / Hirayama, Yoshiro et al. | 2007
- 152
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Properties of InSb single-crystal thin films sandwiched by Al0.1In0.9Sb layers with 0.5% lattice mismatch grown on GaAsGeka, Hirotaka / Okamoto, Atsushi / Yamada, Satoshi / Goto, Hiromasa / Yoshida, Kazuo / Shibasaki, Ichiro et al. | 2007
- 158
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Growth of (In,Ga)As/(Al,Ga)As quantum wells on GaAs(110) by MBEHey, R. / Trampert, A. / Jahn, U. / Couto, O.D.D. Jr. / Santos, P. et al. | 2007
- 163
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Growth of GaAs with orientation-patterned structures for nonlinear opticsYu, Xiaojun / Scaccabarozzi, Luigi / Lin, Angie C. / Fejer, Martin M. / Harris, James S. et al. | 2007
- 168
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Structural and optical studies of (AlAs)m/(GaAs)n type-I ultra short-period superlattices with fractional monolayerFujii, Kensuke / Tsurumachi, Noriaki / Miyagawa, Hayato / Ueji, Rintaro / Itoh, Hiroshi / Nakanishi, Shunsuke / Akiyama, Hidefumi / Koshiba, Shyun et al. | 2007
- 172
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Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on GaAs substratesKitada, Takahiro / Shimomura, Satoshi / Hiyamizu, Satoshi et al. | 2006
- 172
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Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on Formula Not Shown GaAs substratesKitada, T. / Shimomura, S. / Hiyamizu, S. et al. | 2007
- 177
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Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxyMozume, T. / Kasai, J. / Nagase, M. / Simoyama, T. / Ishikawa, H. et al. | 2006
- 181
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Buffer influence on AlSb/InAs/AlSb quantum wellsLi, Zhi Hua / Wang, Wen Xin / Liu, Lin Sheng / Gao, Han Chao / Jiang, Zhong Wei / Zhou, Jun Ming / Chen, Hong et al. | 2007
- 185
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Negative and positive persistent photoconductivity effects in AlxGa1−xAsySb1−y/InAs quantum wellsIshida, S. / Fujimoto, A. / Oto, K. / Araki, M. / Shibasaki, I. et al. | 2007
- 190
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Area selective epitaxy of GaAs with AlGaAs native oxide mask by molecular beam epitaxyYoshiba, Ippei / Iwai, Takayuki / Uehara, Takahiro / Horikoshi, Yoshiji et al. | 2006
- 194
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High mobility metamorphic AlSb/InAs heterostructures grown on InP substratesDesplanque, L. / Vignaud, D. / Wallart, X. et al. | 2007
- 199
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Low-temperature transport properties in AlxGa1−xAsySb1−y/InAs quantum wells: Well-width dependenceIshida, S. / Fujimoto, A. / Araki, M. / Oto, K. / Okamoto, A. / Shibasaki, I. et al. | 2007
- 203
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Low-temperature growth of InSb(111) on Si(111) substrateMurata, K. / Ahmad, N.B. / Tamura, Y. / Mori, M. / Tatsuyama, C. / Tambo, T. et al. | 2006
- 207
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Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via 2x2-In surface reconstructionMori, M. / Saito, M. / Yamashita, Y. / Nagashima, K. / Hashimoto, M. / Tatsuyama, C. / Tambo, T. et al. | 2007
- 207
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Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via 2×2-In surface reconstructionMori, M. / Saito, M. / Yamashita, Y. / Nagashima, K. / Hashimoto, M. / Tatsuyama, C. / Tambo, T. et al. | 2006
- 212
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Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistorsXu, Anhuai / Qi, Ming / Zhu, Fuying / Sun, Hao / Ai, Likun et al. | 2006
- 217
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MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applicationsYarekha, D.A. / Godey, S. / Wallart, X. / Colder, H. / Zaknoune, M. / Mollot, F. et al. | 2007
- 221
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A study on maskless selective growth of Mg-doping p-type GaAs using low-energy focused ion beamKim, E.M. / Gotoh, T. / Fukai, M. / Suzuki, T. / Pak, K. et al. | 2006
- 225
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Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxyChavanapranee, Tosaporn / Horikoshi, Yoshiji et al. | 2006
- 230
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Dependence of the AlSb buffers on GaSb/GaAs(001) heterostructuresKim, H.S. / Noh, Y.K. / Kim, M.D. / Kwon, Y.J. / Oh, J.E. / Kim, Y.H. / Lee, J.Y. / Kim, S.G. / Chung, K.S. et al. | 2007
- 235
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Invalidity of graded buffers for InAs grown on GaAs (001)—A comparison between direct and graded-buffer growthJeong, Y. / Choi, H. / Suzuki, T. et al. | 2007
- 240
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Strain compensation for InGaAs–AlAs–AlAsSb coupled double quantum wells by controlling the barrier layer compositionNagase, Masanori / Mozume, Teruo / Simoyama, Takasi / Hasama, Toshifumi / Ishikawa, Hiroshi et al. | 2006
- 244
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Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(100) substrateNoh, Y.K. / Park, S.R. / Kim, M.D. / Kwon, Y.J. / Oh, J.E. / Kim, Y.H. / Lee, J.Y. / Kim, S.G. / Chung, K.S. / Kim, T.G. et al. | 2006
- 248
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Modification of InAs quantum dot structure during annealingKaizu, Toshiyuki / Takahasi, Masamitu / Yamaguchi, Koichi / Mizuki, Jun’ichiro et al. | 2006
- 252
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Observation of abrupt first-order metal–insulator transition in Be-doped GaAsKim, Hyun-Tak / Youn, Doo-Hyeb / Chae, Byung-Gyu / Kang, Kwang-Yong / Lim, Yong-Sik et al. | 2006
- 256
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Properties of low-temperature-grown InAs and their changes upon annealingShiba, M. / Ikariyama, R. / Takushima, M. / Kajikawa, Y. et al. | 2006
- 260
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GaMnAs grown on (001), (311)A and (110) GAaS substrates: Comparison of growth conditions and post-growth annealing behaviourWurstbauer, Ursula / Sperl, Matthias / Schuh, Dieter / Bayreuther, Günther / Sadowski, Janusz / Wegscheider, Werner et al. | 2006
- 264
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Effect of substrate temperature on the properties of heavily Mn-doped GaAsLee, H.-J. / Chiba, D. / Matsukura, F. / Ohno, H. et al. | 2006
- 268
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MBE HgCdTe on Si and GaAs substratesHe, L. / Chen, L. / Wu, Y. / Fu, X.L. / Wang, Y.Z. / Wu, J. / Yu, M.F. / Yang, J.R. / Ding, R.J. / Hu, X.N. et al. | 2006
- 273
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Zn irradiation effects in MBE growth of MgSe/BeZnSeTe II–VI compound superlattices on InP substratesNomura, Ichirou / Yamazaki, Tomohiro / Hayashi, Hiroaki / Hayami, Koichi / Kato, Masaki / Kishino, Katsumi et al. | 2006
- 277
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Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxyJo, M. / Endo, M. / Kumano, H. / Suemune, I. et al. | 2007
- 281
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Structural and optical properties of CdSe quantum dots induced by amorphous SeAichele, T. / Robin, I.-C. / Bougerol, C. / André, R. / Tatarenko, S. / Van Tendeloo, G. et al. | 2006
- 285
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Al and N co-doped ZnTe Layers Grown by MBEIchiba, A. / Kobayashi, M. et al. | 2007
- 289
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MBE growth of MgS nanowires characterized using AFMMoug, R.T. / Bradford, C. / Prior, K.A. et al. | 2006
- 293
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Amorphous-Te-mediated self-organization of CdSe/ZnSe nanostructuresMahapatra, S. / Margapoti, E. / Worschech, L. / Forchel, A. / Brunner, K. et al. | 2006
- 297
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Deep emissions of MBE-ZnTe on tilted GaAs substrateShigaura, G. / Ohashi, M. / Ichinohe, Y. / Kanamori, M. / Kimura, Na. / Kimura, No. / Sawada, T. / Suzuki, K. / Imai, K. et al. | 2006
- 301
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Quasi-Stranski–Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxyYang, C.S. / Lai, Y.J. / Chou, W.C. / Chen, D.S. / Wang, J.S. / Chien, K.F. / Shih, Y.T. et al. | 2006
- 306
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Light up-conversion mechanism of ZnSe–ZnTe superlatticesOhashi, M. / Shigaura, G. / Ichinohe, Y. / Kanamori, M. / Chikarayumi, Y. / Sasaki, Y. / Kimura, Na. / Kimura, No. / Sawada, T. / Suzuki, K. et al. | 2006
- 310
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Layer-by-layer growth and island formation in CdSe/ZnSe heteroepitaxyMahapatra, S. / Kiessling, T. / Margapoti, E. / Astakhov, G.V. / Ossau, W. / Worschech, L. / Forchel, A. / Brunner, K. et al. | 2006
- 315
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Very thin, high Ge content Si0.3Ge0.7 relaxed buffer grown by MBE on SOI(001) substrateMyronov, M. / Shiraki, Y. et al. | 2006
- 319
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Island motion triggered by the growth of strain-relaxed SiGe/Si(001) islandsMerdzhanova, T. / Rastelli, A. / Stoffel, M. / Kiravittaya, S. / Schmidt, O.G. et al. | 2006
- 324
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Isotopically controlled self-assembled Ge/Si nanostructuresMoutanabbir, O. / Miyamoto, S. / Fujimoto, A. / Itoh, K.M. et al. | 2006
- 330
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High-quality heteroepitaxial Ge growth on nano-patterned Si templates using diblock copolymer patterningLee, J. / Wang, K.L. / Chen, H.-T. / Chen, L.-J. et al. | 2007
- 335
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Growth of strain relaxed Si1−yCy films using SOI substratesMurano, Masahiko / Ishihara, Hanae / Yamada, Akira / Konagai, Makoto et al. | 2006
- 339
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Fabrication of Ge channels with extremely high compressive strain and their magnetotransport propertiesSawano, K. / Kunishi, Y. / Toyama, K. / Okamoto, T. / Usami, N. / Nakagawa, K. / Shiraki, Y. et al. | 2006
- 343
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Growth temperature dependence of lattice structures of SiGe/graded buffer structures grown on Si(110) substrates by gas-source MBEArimoto, Keisuke / Yamanaka, Junji / Nakagawa, Kiyokazu / Sawano, Kentarou / Shiraki, Yasuhiro / Usami, Noritaka / Nakajima, Kazuo et al. | 2006
- 349
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Surface morphology of the Si(111) surface induced by Co-deposition of Si and CH4Suryana, R. / Ichimiya, A. / Nakahara, H. / Saito, Y. et al. | 2006
- 353
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Polarization-induced two-dimensional electron gas at Zn1−xMgxO/ZnO heterointerfaceYano, Mitsuaki / Hashimoto, Kazuyuki / Fujimoto, Kazuya / Koike, Kazuto / Sasa, Shigehiko / Inoue, Masataka / Uetsuji, Yasutomo / Ohnishi, Tomoyuki / Inaba, Katsuhiko et al. | 2006
- 358
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High electron mobility Zn polar ZnMgO/ZnO heterostructures grown by molecular beam epitaxyTampo, H. / Matsubara, K. / Yamada, A. / Shibata, H. / Fons, P. / Yamagata, M. / Kanie, H. / Niki, S. et al. | 2006
- 362
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p-Type ZnO on sapphire by using O2–N2 co-activating and fabrication of ZnO LEDZhang, Z.Z. / Wei, Z.P. / Lu, Y.M. / Shen, D.Z. / Yao, B. / Li, B.H. / Zhao, D.X. / Zhang, J.Y. / Fan, X.W. / Tang, Z.K. et al. | 2006
- 366
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Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxyChauveau, J.-M. / Buell, D.A. / Laügt, M. / Vennéguès, P. / Teisseire-Doninelli, M. / Berard-Bergery, S. / Deparis, C. / Lo, B. / Vinter, B. / Morhain, C. et al. | 2007
- 370
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ZnO epitaxial films grown by flux-modulated RF-MBEHirano, Katsuya / Fujita, Miki / Sasajima, Masanori / Kosaka, Tomohiro / Horikoshi, Yoshiji et al. | 2007
- 373
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Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBELu, Y.M. / Wang, X. / Zhang, Z.Z. / Shen, D.Z. / Su, S.C. / Yao, B. / Li, B.H. / Zhang, J.Y. / Zhao, D.X. / Fan, X.W. et al. | 2007
- 378
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A novel approach of using a MBE template for ALD growth of high-k dielectricsLee, K. Y. / Lee, W. C. / Huang, M. L. / Chang, C. H. / Lee, Y. J. / Chiu, Y. K. / Wu, T. B. / Hong, M. / Kwo, R. et al. | 2007
- 378
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A novel approach of using a MBE template for ALD growth of high-κ dielectricsLee, K.Y. / Lee, W.C. / Huang, M.L. / Chang, C.H. / Lee, Y.J. / Chiu, Y.K. / Wu, T.B. / Hong, M. / Kwo, R. et al. | 2007
- 381
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Growth of praseodymium oxide and silicate for high-k dielectrics by molecular beam epitaxyWatahiki, Tatsuro / Tinkham, Brad P. / Jenichen, Bernd / Braun, Wolfgang / Ploog, Klaus H. et al. | 2006
- 386
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MBE grown high-quality Gd2O3/Si(111) hetero-structureLin, T.D. / Hang, M.C. / Hsu, C.H. / Kwo, J. / Hong, M. et al. | 2006
- 390
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MBE grown high k dielectrics Ga2O3(Gd2O3) on GaNChang, Y. C. / Lee, Y. J. / Chiu, Y. N. / Lin, T. D. / Wu, S. Y. / Chiu, H. C. / Kwo, J. / Wang, Y. H. / Hong, M. et al. | 2007
- 390
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MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaNChang, Y.C. / Lee, Y.J. / Chiu, Y.N. / Lin, T.D. / Wu, S.Y. / Chiu, H.C. / Kwo, J. / Wang, Y.H. / Hong, M. et al. | 2007
- 394
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Characterization of Au thin films deposited on a-Sn(111)-(3x3)/InSb(111)A surfacesKasukabe, Y. / Zhao, X. / Nishida, S. / Fujino, Y. et al. | 2007
- 394
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Characterization of Au thin films deposited on α-Sn(111)-(3×3)/InSb(111)A surfacesKasukabe, Y. / Zhao, X. / Nishida, S. / Fujino, Y. et al. | 2007
- 400
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Structural and transport properties of β-FeSi2 [100] oriented thin film on Si(001) substrateKakemoto, H. / Higuchi, T. / Shibata, H. / Wada, S. / Tsurumi, T. et al. | 2007
- 400
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Structural and transport properties of b-FeSi2 [100] oriented thin film on Si(001) substrateKakemoto, H. / Higuchi, T. / Shibata, H. / Wada, S. / Tsurumi, T. et al. | 2007
- 404
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Quality improvement of III-nitride epilayers and their heterostructures grown on vicinal substrates by rf-MBEShen, X.Q. / Furuta, K. / Nakamura, N. / Matsuhata, H. / Shimizu, M. / Okumura, H. et al. | 2006
- 410
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A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxySuda, J. / Horita, M. / Armitage, R. / Kimoto, T. et al. | 2007
- 414
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Be and Mg co-doping in GaNKawaharazuka, A. / Tanimoto, T. / Nagai, K. / Tanaka, Y. / Horikoshi, Y. et al. | 2006
- 417
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MBE growth of GaN using 15N isotope for nuclear magnetic resonance applicationsNovikov, S.V. / Morris, R.D. / Kent, A.J. / Geen, H.L. / Foxon, C.T. et al. | 2006
- 420
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Effects of V/III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxySawahata, Junji / Seo, Jongwon / Takiguchi, Mikio / Saito, Daisuke / Nemoto, Shinya / Akimoto, Katsuhiro et al. | 2006
- 424
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Low-temperature deposition of hexagonal GaN films for UV electroluminescent devices by CS-MBE techniqueHonda, Tohru / Egawa, Shinichi / Sugimoto, Koichi / Arai, Masatoshi et al. | 2007
- 429
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AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterizationStorm, D.F. / Katzer, D.S. / Roussos, J.A. / Mittereder, J.A. / Bass, R. / Binari, S.C. / Hanser, D. / Preble, E.A. / Evans, K.R. et al. | 2006
- 434
-
Developments for the production of high-quality and high-uniformity AlGaN/GaN heterostructures by ammonia MBECordier, Y. / Semond, F. / Massies, J. / Leroux, M. / Lorenzini, P. / Chaix, C. et al. | 2007
- 437
-
Growth of GaN-HEMT structures using super lattice quasi-AlGaN alloy barriers on vicinal SiC substrates by rf-MBEFuruta, K. / Nakamura, N. / Shen, X.Q. / Shimizu, M. / Kitamura, T. / Nakamura, K. / Okumura, H. et al. | 2007
- 442
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GaN nanostructures and HFET structures selectively grown on silicon substrates by ammonia-MBETang, H. / Bardwell, J.A. / Lapointe, J. / Raymond, S. / Fraser, J. / Haffouz, S. / Rolfe, S. et al. | 2007
- 447
-
Fabrication of lateral lattice-polarity-inverted GaN heterostructureKatayama, Ryuji / Kuge, Yoshihiro / Kondo, Takashi / Onabe, Kentaro et al. | 2006
- 452
-
Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0001) vicinal substratesNakamura, N. / Furuta, K. / Shen, X.Q. / Kitamura, T. / Nakamura, K. / Okumura, H. et al. | 2006
- 457
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Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxyLiu, X.Y. / Aggerstam, T. / Jänes, P. / Holmström, P. / Lourdudoss, S. / Thylén, L. / Andersson, T.G. et al. | 2007
- 461
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Growth and optical properties of AlN homoepitaxial layers grown by ammonia-source molecular beam epitaxyIwata, Shiro / Nanjo, Yoshiyuki / Okuno, Toshihiro / Kurai, Satoshi / Taguchi, Tsunemasa et al. | 2006
- 465
-
InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650nm rangeIvanov, Sergey V. / Jmerik, Valentin N. / Shubina, Tatiana V. / Listoshin, Svyatoslav B. / Mizerov, Andrey M. / Sitnikova, Alla A. / Kim, Min-Ho / Koike, Masayoshi / Kim, Bum-Joon / Kop’ev, Pyotr S. et al. | 2006
- 469
-
Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templatesJmerik, V.N. / Mizerov, A.M. / Shubina, T.V. / Yagovkina, M. / Listoshin, V.B. / Sitnikova, A.A. / Ivanov, S.V. / Kim, M.-H. / Koike, M. / Kim, B.-J. et al. | 2006
- 473
-
Growth of In-rich InGaN films on sapphire via GaN layer by RF-MBEKomaki, Hironori / Nakamura, Teruyuki / Katayama, Ryuji / Onabe, Kentaro / Ozeki, Masashi / Ikari, Tetsuo et al. | 2006
- 478
-
MBE growth of GaN on MgO substrateSuzuki, Ryotaro / Kawaharazuka, Atsushi / Horikoshi, Yoshiji et al. | 2006
- 482
-
Use of band-gap thermometry to investigate the growth of GaN on sapphire and GaAsFoxon, C.T. / Campion, R.P. / Grant, V.A. / Novikov, S.V. / Harris, J.J. / Thomson, R. / Taylor, C. / Barlett, D. et al. | 2007
- 486
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Fabrication of GaN dot structure by droplet epitaxy using NH3Maruyama, Takahiro / Otsubo, Hiroaki / Kondo, Toshiyuki / Yamamoto, Yo / Naritsuka, Shigeya et al. | 2006
- 490
-
Growth of InN nanocolumns by RF-MBENishikawa, S. / Nakao, Y. / Naoi, H. / Araki, T. / Na, H. / Nanishi, Y. et al. | 2007
- 496
-
In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxyWang, Xinqiang / Che, Song-Bek / Ishitani, Yoshihiro / Yoshikawa, Akihiko et al. | 2006
- 500
-
A quantitative study of suppression effect for oxygen contamination by Ga beam irradiation in InN RF-MOMBE growthHashimoto, A. / Iwao, K. / Isamoto, K. / Yamamoto, A. et al. | 2006
- 504
-
Effects of nitrogen plasma irradiation during the growth process after buffer layer growth on the characteristics of hexagonal InN films grown on Si (111) by electron–cyclotron resonance plasma-assisted molecular-beam epitaxyYodo, Tokuo / Shimada, Teruya / Tagawa, Sumito / Harada, Yoshiyuki et al. | 2007
- 508
-
RF–MBE growth and structural characterization of cubic InN films on yttria-stabilized zirconia (001) substratesNakamura, T. / Tokumoto, Y. / Katayama, R. / Yamamoto, T. / Onabe, K. et al. | 2006
- 513
-
RF-MBE growth of InN/InGaN quantum well structures on 3C–SiC substratesHirano, S. / Inoue, T. / Shikata, G. / Orihara, M. / Hijikata, Y. / Yaguchi, H. / Yoshida, S. et al. | 2006
- 517
-
RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayerShikata, G. / Hirano, S. / Inoue, T. / Orihara, M. / Hijikata, Y. / Yaguchi, H. / Yoshida, S. et al. | 2006
- 521
-
The influence of indium monolayer insertion on the InN epifilm grown by plasma-assisted molecular beam epitaxyYao, Yongzhao / Sekiguchi, Takashi / Sakuma, Yoshiki / Ohashi, Naoki et al. | 2007
- 525
-
All-GaInNAs ultrafast lasers: Material development for emitters and absorbersRutz, A. / Liverini, V. / Müller, E. / Schön, S. / Keller, U. et al. | 2007
- 529
-
Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of (Ga,In)(N,As) multiple quantum wellsIshikawa, Fumitaro / Trampert, Achim / Ploog, Klaus H. et al. | 2006
- 529
-
Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of Formula Not Shown (Ga,In)(N,As) multiple quantum wellsIshikawa, F. / Trampert, A. / Ploog, K. H. et al. | 2007
- 534
-
TlGaInNAs/GaAs double quantum well structures: Effect of barrier layers and substrate orientationKrishnamurthy, D. / Matsumoto, T. / Fujiwara, A. / Hasegawa, S. / Asahi, H. et al. | 2006
- 539
-
Band alignments of InGaPN/GaPN quantum well structures on GaP and SiUmeno, Kazuyuki / Kim, Sung Man / Furukawa, Yuzo / Yonezu, Hiroo / Wakahara, Akihiro et al. | 2006
- 545
-
Growth of low-threshold GaInNAs/GaAs triple-quantum-well lasersKasai, J. / Kitatani, T. / Adachi, K. / Nakahara, K. / Aoki, M. et al. | 2007
- 548
-
Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxyLiu, H.F. / Xiang, N. / Zhou, H.L. / Chua, S.J. / Yang, P. / Moser, H.O. et al. | 2007
- 552
-
Optical characterization of (In,Ga)(As,N) thin films grown by molecular beam epitaxy on non-(100) GaAs substratesIbáñez, J. / Henini, M. / Kudrawiec, R. / Misiewicz, J. / Schmidbauer, M. / Hopkinson, M. et al. | 2006
- 556
-
Nitrogen-dependent effects on GaInNAs photoluminescence upon annealingLiverini, V. / Rutz, A. / Keller, U. / Schön, S. et al. | 2007
- 560
-
Effect of residual hydrogen and temperature on initial growth stages and properties of GaAs1−xNxFotkatzikis, A. / Freundlich, A. et al. | 2007
- 565
-
Study of optical properties of GaAsN layers prepared by molecular beam epitaxyPulzara-Mora, A. / Cruz-Hernández, E. / Rojas-Ramirez, J. / Contreras-Guerrero, R. / Meléndez-Lira, M. / Falcony-Guajardo, C. / Aguilar-Frutis, M.A. / López-López, M. et al. | 2007
- 570
-
Parameter tunable GaInNAs saturable absorbers for mode locking of solid-state lasersRutz, A. / Liverini, V. / Grange, R. / Haiml, M. / Schön, S. / Keller, U. et al. | 2007
- 575
-
Improvement of crystal quality of thick InGaAsN layers grown on InP substrates by adding antimonyMiura, K. / Nagai, Y. / Iguchi, Y. / Okada, H. / Kawamura, Y. et al. | 2006
- 579
-
Effect of growth temperature on the properties of Ga(In)NAs thin films by atomic hydrogen-assisted RF-MBEShimizu, Yukiko / Miyashita, Naoya / Mura, Yusuke / Uedono, Akira / Okada, Yoshitaka et al. | 2006
- 583
-
GaNAs/GaAs multiple quantum well grown by modulated N radical beam sequence of RF-MBE: Effect of growth interruptionFujii, Kensuke / Takao, Katsuhiro / Kumamoto, Tsuneaki / Kakino, Masayoshi / Tsurumachi, Noriaki / Miyagawa, Hayato / Ueji, Rintaro / Itoh, Hiroshi / Nakanishi, Shunsuke / Akiyama, Hidefumi et al. | 2007
- 588
-
Structural and magnetic properties of epitaxial Fe3Si/GaAs heterostructuresHsu, Y.L. / Lee, Y.J. / Chang, Y.H. / Huang, M.L. / Chiu, Y.N. / Ho, C.C. / Chang, P. / Hsu, C.H. / Hong, M. / Kwo, J. et al. | 2006
- 592
-
Growth, interface structure and magnetic properties of Heusler alloy Co2FeSi/GaAs(001) hybrid structuresHashimoto, M. / Herfort, J. / Trampert, A. / Ploog, K.H. et al. | 2006
- 597
-
Epitaxial growth of ferromagnetic Fe3N films on Si(111) substrates by molecular beam epitaxyYamaguchi, K. / Yui, T. / Yamaki, K. / Kakeya, I. / Kadowaki, K. / Suemasu, T. et al. | 2006
- 602
-
Electron spin injection from a regrown Fe layer in a spin-polarized vertical-cavity surface-emitting laserHolub, M. / Bhattacharya, P. / Shin, J. / Saha, D. et al. | 2006
- 607
-
Epitaxial growth of bcc Mn films on 4H-SiC(0001) by molecular beam epitaxyWang, Wenhong / Takano, Fumiyoshi / Ofuchi, Hironori / Akinaga, Hiro et al. | 2006
- 611
-
Schottky barrier MOSFETs with epitaxial ferromagnetic MnAs/Si(001) source and drain: Post-growth annealing and transport characteristicsSugiura, K. / Nakane, R. / Sugahara, S. / Tanaka, M. et al. | 2006
- 615
-
Molecular beam epitaxy growth, magnetic and structural properties of MnAs thin films grown on InP(001) and InGaAsPYokoyama, M. / Ohya, S. / Tanaka, M. et al. | 2006
- 619
-
Formation and properties of MnAs magnetic nanoscaled dots on sulfur-passivated semiconductor substratesKubo, K. / Kanai, K. / Okabayashi, J. / Oshima, M. / Ofuchi, H. et al. | 2006
- 623
-
Preparation of high-TC ferromagnetic (In,Mn)As with strongly As-rich conditionsSchallenberg, T. / Munekata, H. et al. | 2006
- 627
-
Fabrication, structural and magnetic properties of InAlMnAs and InAlAs:MnAs granular thin filmsYokoyama, M. / Ohya, S. / Tanaka, M. et al. | 2007
- 631
-
Theoretical study of alloy phase stability in zincblende Ga1−xMnxAsHatano, Keishi / Nakamura, Kohji / Akiyama, Toru / Ito, Tomonori et al. | 2006
- 634
-
Enhanced magnetization by modulated Mn delta doping in GaAsYanagisawa, Kohei / Takeuchi, Suguru / Yoshitake, Hirosi / Onomitsu, Koji / Horikoshi, Yosizi et al. | 2007
- 638
-
Epitaxial GaMnAs layers and nanostructures with anisotropy in structural and magnetic propertiesWenisch, J. / Ebel, L. / Gould, C. / Schmidt, G. / Molenkamp, L.W. / Brunner, K. et al. | 2007
- 642
-
Molecular beam epitaxy and magnetic properties of GaMnNAsKobayashi, Genki / Mori, Takahiro / Kato, Takashi / Hanada, Takashi / Makino, Hisao / Yao, Takafumi et al. | 2006
- 647
-
Epitaxial growth and magnetic properties of GaMnNAsManago, T. / Sinsarp, A. / Kawaguchi, K. / Akinaga, H. et al. | 2006
- 651
-
Growth and characterization of ferromagnetic cubic GaCrN: Structural and magnetic propertiesKimura, S. / Emura, S. / Ofuchi, H. / Zhou, Y.K. / Hasegawa, S. / Asahi, H. et al. | 2006
- 656
-
MBE growth of Mn-doped Zn–Sn–As compounds on (001) InP substratesAsubar, J.T. / Kato, A. / Kambayashi, T. / Nakamura, S. / Jinbo, Y. / Uchitomi, N. et al. | 2007
- 662
-
Existence of localized spins in pair delta-doped GaAs structuresNoh, J.P. / Idutsu, Y. / Otsuka, N. et al. | 2007
- 666
-
Percolation transition via quantum point contacts in Be delta-doped GaAs structures grown by molecular beam epitaxyShimogishi, F. / Noh, J.P. / Idutsu, Y. / Otsuka, N. et al. | 2007
- 671
-
The coherent {100} and {110} interfaces between rocksalt-PbTe and zincblende-CdTeGroiss, H. / Heiss, W. / Schäffler, F. / Leitsmann, R. / Bechstedt, F. / Koike, K. / Harada, H. / Yano, M. et al. | 2006
- 676
-
Epitaxial growth and luminescence characterization of Si/β-FeSi2/Si multilayered structures by molecular beam epitaxyMurase, S. / Sunohara, T. / Suemasu, T. et al. | 2006
- 676
-
Epitaxial growth and luminescence characterization of Si/b-FeSi2/Si multilayered structures by molecular beam epitaxyMurase, S. / Sunohara, T. / Suemasu, T. et al. | 2007
- 680
-
Molecular beam epitaxy of band gap tunable ternary semiconducting silicides Ba1−xSrxSi2 for photovoltaic applicationSuemasu, T. / Morita, K. / Kobayashi, M. et al. | 2006
- 684
-
Thin film growth of (Cu, C)Ba2Ca(n−1)CunOy (n=1–4) superconductor by molecular beam epitaxyShibata, H. / Karimoto, S. / Tsukada, A. / Makimoto, T. et al. | 2006
- 687
-
Characteristics of multivalent impurity doped C60 films grown by MBENishinaga, Jiro / Aihara, Tomoyuki / Kawaharazuka, Atsushi / Horikoshi, Yoshiji et al. | 2007
- 692
-
Kinetic model of intermixing during self-assembled InAs quantum dot formationHeyn, Ch. / Schramm, A. / Kipp, T. / Hansen, W. et al. | 2006
- 697
-
MBE growth of self-assembled InGaAs quantum dots aligned along quasi-periodic multi-atomic steps on a vicinal (111)B GaAs surfaceAkiyama, Y. / Sakaki, H. et al. | 2006
- 701
-
Guided quantum dot ordering by self-organized anisotropic strain engineering and step engineering on shallow-patterned substratesSelcuk, E. / Lippen, T.v. / Hamhuis, G.J. / Nötzel, R. et al. | 2006
- 705
-
Initial stages of self-assembled InAs/InP(001) quantum wire formationFuster, David / Alén, Benito / González, Luisa / González, Yolanda / Martínez-Pastor, Juan et al. | 2006
- 709
-
Emission-wavelength extension of nitrided InAs/GaAs quantum dots with different sizesMizuno, H. / Inoue, T. / Kikuno, M. / Kita, T. / Wada, O. / Mori, H. / Yasuda, H. et al. | 2006
- 713
-
High-density InSb-based quantum dots emitting in the mid-infraredTasco, V. / Deguffroy, N. / Baranov, A.N. / Tournié, E. / Satpati, B. / Trampert, A. / Dunaevski, M. / Titkov, A. et al. | 2006
- 718
-
Amplified spontaneous emission from GaSb quantum dots in Si grown by MBEYasuhara, N. / Jo, M. / Sugawara, Y. / Kawamoto, K. / Fukatsu, S. et al. | 2007
- 722
-
Photoluminescence characterization of PbTe/CdTe quantum dots grown by lattice-type mismatched epitaxyKoike, Kazuto / Harada, Hisashi / Itakura, Tomoyuki / Yano, Mitsuaki / Heiss, Wolfgang / Groiss, Heiko / Kaufmann, Erich / Hesser, Gunter / Schäffler, Friedrich et al. | 2006
- 726
-
Selective growth of InAs quantum dots using In nano-dot arrays formed by nano-jet probe methodOhkouchi, S. / Sugimoto, Y. / Ozaki, N. / Ishikawa, H. / Asakawa, K. et al. | 2006
- 731
-
Electronic properties of self-assembled InAs quantum dots on GaAs surfaces probed by lateral electron tunneling structuresShibata, K. / Jung, M. / Hirakawa, K. / Machida, T. / Ishida, S. / Arakawa, Y. / Sakaki, H. et al. | 2006
- 735
-
Self-assembled lateral Bi-quantum-dot molecule formation by gas-source molecular beam epitaxySuraprapapich, S. / Shen, Y.M. / Odnoblyudov, V.A. / Fainman, Y. / Panyakeow, S. / Tu, C.W. et al. | 2006
- 740
-
Ring-shaped GaAs quantum dot laser grown by droplet epitaxy: Effects of post-growth annealing on structural and optical propertiesMano, T. / Kuroda, T. / Mitsuishi, K. / Yamagiwa, M. / Guo, X.-J. / Furuya, K. / Sakoda, K. / Koguchi, N. et al. | 2007
- 744
-
Selective growth of ordered InGaAs quantum dots on patterned substrates with nano-hole arraysOhkouchi, S. / Nakamura, Y. / Ikeda, N. / Sugimoto, Y. / Asakawa, K. et al. | 2006
- 748
-
Shape transformation of self-assembled InAs quantum dots by overgrowth with GaAs and AlAsSchramm, A. / Schaefer, J. / Kipp, T. / Heyn, Ch. / Hansen, W. et al. | 2006
- 751
-
Fabrication of ultra-low density and long-wavelength emission InAs quantum dotsHuang, Shesong / Niu, Zhichuan / Ni, Haiqiao / Xiong, Yonghua / Zhan, Feng / Fang, Zhidan / Xia, Jianbai et al. | 2007
- 755
-
Fabrication of high-quality CdSe quantum dots for green laser diodes by molecular beam epitaxyOhkuno, Koji / Oku, Hironao / Araki, Yuji / Nagata, Naohiro / Saraie, Junji et al. | 2006
- 759
-
Lateral self-arrangement of self-assembled InAs quantum dots by an intentional-induced dislocation networkWelsch, H. / Kipp, T. / Heyn, Ch. / Hansen, W. et al. | 2006
- 762
-
InAs quantum dots array grown with an As2 source on non-planar GaAs substratesSugaya, T. / Morohashi, I. / Komori, K. / Amano, T. et al. | 2006
- 766
-
Dosage dependence of Ge quantum dots grown on carbon-implanted Si substratesOgawa, Masaaki / Cha, Dong-ho / Lee, Joo-young / Wang, Kang L. et al. | 2007
- 771
-
Selective area growth of InAs quantum dots with a metal mask towards optical integrated circuit devicesOzaki, N. / Takata, Y. / Ohkouchi, S. / Sugimoto, Y. / Nakamura, Y. / Ikeda, N. / Asakawa, K. et al. | 2006
- 776
-
Optical properties of stacked InAs self-organized quantum dots on InP (311)BOshima, Ryuji / Akahane, Kouichi / Tsuchiya, Masahiro / Shigekawa, Hidemi / Okada, Yoshitaka et al. | 2006
- 781
-
Growth and magneto-optical properties of CdSe/ZnMnSe self-assembled quantum dotsLee, Sanghoon / Dobrowolska, M. / Furdyna, J.K. et al. | 2007
- 785
-
Feasibility study of a semiconductor quantum bit structure based on a spin FET embedded with self-assembled InAs quantum dotsKashiwada, Saori / Matsuda, Takashi / Yoh, Kanji et al. | 2006
- 789
-
Investigation of CdSe quantum dots in MgS barriers as active region in light emitting diodesGust, A. / Kruse, C. / Hommel, D. et al. | 2007
- 793
-
Effect of strain anisotropies on RHEED patterns of quantum dotsFeltrin, A. / Freundlich, A. et al. | 2007
- 797
-
High-temperature growth of Mn-irradiated InAs quantum dotsNagahara, Seiji / Tsukamoto, Shiro / Arakawa, Yasuhiko et al. | 2006
- 801
-
InGaAs quantum dots grown with As4 and As2 sources using molecular beam epitaxySugaya, T. / Furue, S. / Amano, T. / Komori, K. et al. | 2006
- 805
-
Optical properties of p-type modulation-doped InAs quantum dot structures grown by molecular beam epitaxyKumagai, N. / Watanabe, K. / Nakata, Y. / Arakawa, Y. et al. | 2006
- 809
-
Green light emitting diodes with CdSe quantum dotsAraki, Yuji / Ohkuno, Koji / Furukawa, Takeshi / Saraie, Junji et al. | 2006
- 812
-
Evolution of self-assembled lateral quantum dot moleculesSiripitakchai, N. / Suraprapapich, S. / Thainoi, S. / Kanjanachuchai, S. / Panyakeow, S. et al. | 2007
- 817
-
Temperature-insensitive detectivity of 5-pair InAs/GaAs quantum-dot infrared photodetectors with asymmetric device structureChou, Shu-Ting / Chen, Shang-Fu / Lin, Shih-Yen / Wu, Meng-Chyi / Wang, Jing-Mei et al. | 2007
- 821
-
MBE growth of InAs self-assembled quantum dots embedded in GaNAs strain-compensating layersHashimoto, Takayuki / Oshima, Ryuji / Shigekawa, Hidemi / Okada, Yoshitaka et al. | 2006
- 825
-
AlAs coating for stacked structure of self-assembled InAs/GaAs quantum dotsYokota, H. / Iizuka, K. / Okamoto, H. / Suzuki, T. et al. | 2007
- 828
-
Molecular beam epitaxial growth of very large lateral anisotropic GaSb/GaAs quantum dotsJiang, Chao / Kawazu, Takuya / Kobayashi, Shigeki / Sakaki, Hiroyuki et al. | 2006
- 833
-
Intersubband absorption in p-type Si1−xGex quantum dots on pre-patterned Si substrates made by a diblock copolymer processCha, Dongho / Ogawa, Masaaki / Chen, Christopher / Kim, Seongku / Lee, Jooyoung / Wang, Kang L. / Wang, Jiayu / Russell, Thomas P. et al. | 2006
- 837
-
An empirical potential approach to the structural stability of InAs stacking-fault tetrahedron in InAs/GaAs(111)Joe, Hidenori / Akiyama, Toru / Nakamura, Kohji / Kanisawa, Kiyoshi / Ito, Tomonori et al. | 2007
- 841
-
The influence of InAs coverage on the performances self-assembled InGaAs quantum ringsHuang, Chun-Yuan / Wu, Meng-Chyi / Lin, Shih-Yen / Dai, Jong-Horng / Lee, Si-Chen et al. | 2007
- 846
-
Site control of very low density InAs QDs on patterned GaAs nano-wire surfacesUeta, Akio / Akahane, Kouichi / Gozu, Sinichiro / Yamamoto, Naokatsu / Ohtani, Naoki / Tsuchiya, Masahiro et al. | 2006
- 849
-
Closely stacking growth of highly uniform InAs quantum dots on self-formed GaAs nanoholesTsukiji, Nobukazu / Yamaguchi, Koichi et al. | 2006
- 853
-
GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperatureHarmand, J.C. / Tchernycheva, M. / Patriarche, G. / Travers, L. / Glas, F. / Cirlin, G. et al. | 2006
- 857
-
Selective MBE growth of hexagonal networks of trapezoidal and triangular GaAs nanowires on patterned (111)B substratesTamai, Isao / Hasegawa, Hideki et al. | 2006
- 862
-
A Monte-Carlo simulation study of twinning formation in InP nanowiresSano, Kosuke / Akiyama, Toru / Nakamura, Kohji / Ito, Tomonori et al. | 2007
- 866
-
Growth temperature dependence of MBE-grown ZnSe NanowiresChan, S.K. / Cai, Y. / Wang, N. / Sou, I.K. et al. | 2006
- 871
-
Orientation and size dependence on structural stability in silicon nanowires: A transferable tight-binding calculation studyMaeda, S. / Akiyama, T. / Nakamura, K. / Ito, T. et al. | 2006
- 876
-
Formation of patterned Ga InAs/GaAs hetero-structures using amorphous arsenic maskNoritake, Y. / Yamada, T. / Tabuchi, M. / Takeda, Y. et al. | 2006
- 880
-
Structure of GaSb/GaAs(001) surface using the first principles calculationIshii, A. / Fujiwara, K. / Tsukamoto, S. / Kakuda, N. / Yamaguchi, K. / Arakawa, Y. et al. | 2007
- 884
-
Study of the GaAs MBE growth on (631)-oriented substrates by Raman spectroscopyCruz-Hernández, E. / Pulzara-Mora, A. / Rojas-Ramirez, J. / Contreras-Guerrero, R. / Vazquez, D. / Rodriguez, A.G. / Méndez-García, V.H. / López-López, M. et al. | 2006
- 889
-
Interface analysis of InAs/GaSb superlattice grown by MBESatpati, B. / Rodriguez, J.B. / Trampert, A. / Tournié, E. / Joullié, A. / Christol, P. et al. | 2007
- 893
-
Epitaxial growth of GaInAs/AlGaAsSb quantum cascade lasersManz, C. / Yang, Q. / Kirste, L. / Köhler, K. et al. | 2006
- 897
-
Piezoresistance of suspended InAs/AlGaSb heterostructure nanobeamYamazaki, Kenji / Etaki, Samir / van der Zant, Herre S.J. / Yamaguchi, Hiroshi et al. | 2006
- 902
-
Ultra-low-frequency photocurrent self-oscillation in strained InxGa1−xAs quantum well diodesTanigawa, K. / Fujiwara, K. / Sano, N. et al. | 2006
- 906
-
Enhancement of magnetic field in superconductor and magnetic semiconductor quantum well hybrid structureLee, Sanghoon / Shin, D.Y. / Hyun, E.K. / Lee, S.-R. / Dobrowolska, M. / Furdyna, J.K. et al. | 2007
- 910
-
g-factor of two-dimensional electrons in selectively doped n-AlGaAs/GaAs heterojunctions with embedded InGaAs quantum dotsKawazu, Takuya / Sakaki, Hiroyuki et al. | 2006
- 914
-
MBE-grown metamorphic lasers for applications at telecom wavelengthsLedentsov, N.N. / Shchukin, V.A. / Kettler, T. / Posilovic, K. / Bimberg, D. / Karachinsky, L.Ya. / Gladyshev, A.Yu. / Maximov, M.V. / Novikov, I.I. / Shernyakov, Yu.M. et al. | 2006
- 923
-
Molecular beam epitaxial growth and characteristics of ultra-low threshold 1.45μm metamorphic InAs quantum dot lasers on GaAsMi, Z. / Yang, J. / Bhattacharya, P. et al. | 2006
- 923
-
Molecular beam epitaxial growth and characteristics of ultra-low threshold 1.45mm metamorphic InAs quantum dot lasers on GaAsMi, Z. / Yang, J. / Bhattacharya, P. et al. | 2007
- 927
-
Room temperature, low-threshold distributed feedback quantum cascade lasers at ∼8.4 and ∼7.7μmXu, Gangyi / Wei, Lin / Li, Yaoyao / Li, Aizhen / Lin, Chun / Zhang, Yonggang / Li, Hua et al. | 2007
- 927
-
Room temperature, low-threshold distributed feedback quantum cascade lasers at 8.4 and 7.7mmXu, G. / Wei, L. / Li, Y. / Li, A. / Lin, C. / Zhang, Y. / Li, H. et al. | 2007
- 931
-
High-power, narrow-ridge, mid-infrared interband cascade lasersCanedy, C.L. / Kim, C.S. / Kim, M. / Larrabee, D.C. / Nolde, J.A. / Bewley, W.W. / Vurgaftman, I. / Meyer, J.R. et al. | 2006
- 935
-
Tuning the emission frequency of a 2THz quantum cascade laser by altering the total thickness of the structureBeere, H.E. / Worrall, C.H. / Whelan, S. / Ritchie, D.A. / Alton, J. / Barbieri, S. / Sirtori, C. et al. | 2006
- 941
-
Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3μmBoehm, Gerhard / Grau, Markus / Dier, Oliver / Windhorn, Kirsten / Roenneberg, Enno / Rosskopf, Juergen / Shau, Robert / Meyer, Ralf / Ortsiefer, Markus / Amann, Markus-Christian et al. | 2006
- 941
-
Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3mmBoehm, G. / Grau, M. / Dier, O. / Windhorn, K. / Roenneberg, E. / Rosskopf, J. / Shau, R. / Meyer, R. / Ortsiefer, M. / Amann, M. C. et al. | 2007
- 945
-
MBE-grown ultra-large aperture single-mode vertical-cavity surface-emitting laser with all-epitaxial filter sectionBlokhin, S.A. / Karachinsky, L.Ya. / Novikov, I.I. / Kuznetsov, S.M. / Gordeev, N.Yu. / Shernyakov, Y.M. / Savelyev, A.V. / Maximov, M.V. / Mutig, A. / Hopfer, F. et al. | 2007
- 951
-
MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devicesAkazawa, Masamichi / Hasegawa, Hideki et al. | 2006
- 955
-
Metamorphic molecular beam epitaxy growth and selective wet etching for epitaxial layer lift-off of AlAsSb toward optical waveguides with high optical confinementGozu, Shin-ichiro / Akahane, Kouichi / Yamamoto, Naokatsu / Ueta, Akio / Ohtani, Naoki / Tsuchiya, Masahiro et al. | 2006
- 959
-
Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAsLi, L.H. / Rossetti, M. / Patriarche, G. / Fiore, A. et al. | 2006
- 963
-
Properties of InAsSbN quantum well laser diodes operating at 2μm wavelength region grown on InP substratesKawamura, Yuichi / Inoue, Naohisa et al. | 2007
- 963
-
Properties of InAsSbN quantum well laser diodes operating at 2mm wavelength region grown on InP substratesKawamura, Y. / Inoue, N. et al. | 2007
- 967
-
Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93mmCerutti, L. / Boissier, G. / Grech, P. / Perona, A. / Angellier, J. / Rouillard, Y. / Tournie, E. / Genty, F. / Dente, G. C. / Kaspi, R. et al. | 2007
- 967
-
Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93μmCerutti, L. / Boissier, G. / Grech, P. / Perona, A. / Angellier, J. / Rouillard, Y. / Tournié, E. / Genty, F. / Dente, G.C. / Kaspi, R. et al. | 2006
- 971
-
Metamorphic growth of 1.25–1.29μm InGaAs quantum well lasers on GaAs by molecular beam epitaxyTångring, I. / Wang, S.M. / Sadeghi, M. / Larsson, A. / Wang, X.D. et al. | 2006
- 971
-
Metamorphic growth of 1.25-1.29mm InGaAs quantum well lasers on GaAs by molecular beam epitaxyTangring, I. / Wang, S. M. / Sadeghi, M. / Larsson, A. / Wang, X. D. et al. | 2007
- 975
-
Molecular-beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emissionYoshimoto, Masahiro / Huang, Wei / Feng, Gan / Tanaka, Yoshinori / Oe, Kunishige et al. | 2006
- 979
-
Application of rapid thermal annealing on 1.3–1.55μm GaInNAs(Sb) lasers grown by molecular beam epitaxyZhao, H. / Xu, Y.Q. / Ni, H.Q. / Zhang, S.Y. / Han, Q. / Du, Y. / Yang, X.H. / Wu, R.H. / Niu, Z.C. et al. | 2007
- 979
-
Application of rapid thermal annealing on 1.3-1.55mm GaInNAs(Sb) lasers grown by molecular beam epitaxyZhao, H. / Xu, Y. Q. / Ni, H. Q. / Zhang, S. Y. / Han, Q. / Du, Y. / Yang, X. H. / Wu, R. H. / Niu, Z. C. et al. | 2007
- 984
-
Photonic dot structure which emits photons horizontally to a built-in waveguideMukai, Kohki / Yamamoto, Yasufumi et al. | 2006
- 989
-
Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wellsXiang, N. / Liu, H.F. / Kong, J. / Tang, D.Y. / Pessa, M. et al. | 2007