An ECR ion source directly excited in a selected microwave mode cavity resonator for material processing (English)
- New search for: Asaji, Toyohisa
- New search for: Sasaki, Hiroshi
- New search for: Furuki, Hideyuki
- New search for: Kato, Yushi
- New search for: Ishii, Shigeyuki
- New search for: Kanazawa, Motoichi
- New search for: Saito, Junji
- New search for: Asaji, Toyohisa
- New search for: Sasaki, Hiroshi
- New search for: Furuki, Hideyuki
- New search for: Kato, Yushi
- New search for: Ishii, Shigeyuki
- New search for: Kanazawa, Motoichi
- New search for: Saito, Junji
In:
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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237
, 1-2
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262-266
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2005
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ISSN:
- Article (Journal) / Electronic Resource
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Title:An ECR ion source directly excited in a selected microwave mode cavity resonator for material processing
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Contributors:Asaji, Toyohisa ( author ) / Sasaki, Hiroshi ( author ) / Furuki, Hideyuki ( author ) / Kato, Yushi ( author ) / Ishii, Shigeyuki ( author ) / Kanazawa, Motoichi ( author ) / Saito, Junji ( author )
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Published in:
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Publisher:
- New search for: Elsevier B.V.
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Publication date:2005-01-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 237, Issue 1-2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Ion implantation in advanced planar and vertical devicesGossmann, Hans-Joachim L. et al. | 2005
- 6
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Alternative USJ formation and characterization methods for 45nm node technologyBorland, John O. et al. | 2005
- 12
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Electrical activation of ultra-shallow B and BF2 implanted silicon by flash annealYoo, Woo Sik / Kang, Kitaek et al. | 2005
- 18
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Ultra shallow P+/N junctions using plasma immersion ion implantation and laser annealing for sub 0.1μm CMOS devicesTorregrosa, Frank / Laviron, Cyrille / Milesi, Frédéric / Hernandez, Miguel / Faïk, Hasna / Venturini, Julien et al. | 2005
- 25
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Ultra-shallow junction formation by B18H22 ion implantationKawasaki, Y. / Kuroi, T. / Yamashita, T. / Horita, K. / Hayashi, T. / Ishibashi, M. / Togawa, M. / Ohno, Y. / Yoneda, M. / Horsky, Tom et al. | 2005
- 30
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Nondestructive evaluation of as-implanted and annealed ultra shallow junctions by photothermal and photoluminescence heterodyne techniquesGeiler, H.D. / Karge, H. / Wagner, M. / Lerch, W. / Paul, S. et al. | 2005
- 35
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Optimization of pre-amorphization and dopant implant conditions for advanced annealingFelch, S.B. / Graoui, H. / Tsai, G. / Mayur, A. et al. | 2005
- 41
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New method of Plasma doping with in-situ Helium pre-amorphizationSasaki, Y. / Jin, C.G. / Okashita, K. / Tamura, H. / Ito, H. / Mizuno, B. / Sauddin, H. / Higaki, R. / Satoh, T. / Majima, K. et al. | 2005
- 46
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Optimization of advanced PMOS junctions using Ge, B and F co-implantsGraoui, H. / Hilkene, M. / McComb, B. / Castle, M. / Felch, S. / Al-Bayati, A. / Tjandra, A. / Foad, M.A. et al. | 2005
- 53
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90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implantsFelch, S.B. / Foad, M.A. / Olsen, C. / Nouri, F. / Matsunaga, Y. / Natsuaki, N. et al. | 2005
- 58
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Ultra shallow p+/n junction formation by plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) with selective absorption modulationJin, C.G. / Sasaki, Y. / Okashita, K. / Tamura, H. / Ito, H. / Mizuno, B. / Tsutsui, K. / Ohmi, S. / Iwai, H. et al. | 2005
- 62
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Application of ultra-high energy boron implantation for superjunction power (CoolMOS™) devicesBorany, J. von / Friedrich, M. / Rüb, M. / Deboy, G. / Butschke, J. / Letzkus, F. et al. | 2005
- 68
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Implantation and annealing of aluminum in 4H silicon carbideRambach, M. / Schmid, F. / Krieger, M. / Frey, L. / Bauer, A.J. / Pensl, G. / Ryssel, H. et al. | 2005
- 72
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Dopant profiling of ultra shallow As implanted in Si with and without spike annealing using medium energy ion scatteringAbo, S. / Ichihara, S. / Lohner, T. / Wakaya, F. / Eimori, T. / Inoue, Y. / Takai, M. et al. | 2005
- 77
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Electrical characteristics due to differences in crystal damage induced by various implant conditionsFuse, G. / Sano, M. / Murooka, H. / Yagita, T. / Kabasawa, M. / Siraishi, T. / Fujino, Y. / Suetsugu, N. / Kariya, H. / Izutani, H. et al. | 2005
- 83
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Formation of β-FeSi2 by implanting multicharged iron ions produced in an ECR ion sourceTomida, Masashi / Kato, Yushi / Asaji, Toyohisa et al. | 2005
- 88
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Diffusion of indium implanted in silicon: The effect of the pre-amorphisation treatment and of the presence of carbonGennaro, S. / Barozzi, M. / Bersani, M. / Sealy, B.J. / Gwilliam, R. et al. | 2005
- 93
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Comparison of elemental boron and boron halide implants into siliconSharp, J.A. / Gwilliam, R.M. / Sealy, B.J. / Jeynes, C. / Hamilton, J.J. / Kirkby, K.J. et al. | 2005
- 98
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Angled implants for controlling gate–source/drain extension: A TCAD modeling studyThirupapuliyur, Sunderraj / Al-Bayati, Amir / Jain, Amitabh / Mayur, Abhilash et al. | 2005
- 102
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Implantation induced electrical isolation of sulphur doped GaNxAs1−x layersAhmed, S. / Lin, J. / Haq, A. / Sealy, B. et al. | 2005
- 107
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Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOIHamilton, J.J. / Collart, E.J.H. / Colombeau, B. / Jeynes, C. / Bersani, M. / Giubertoni, D. / Sharp, J.A. / Cowern, N.E.B. / Kirkby, K.J. et al. | 2005
- 113
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Investigation on boron transient enhanced diffusion induced by the advanced P+/N ultra-shallow junction fabrication processesLallement, F. / Lenoble, D. et al. | 2005
- 121
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Ultra shallow junction formation and dopant activation study of Ga implanted SiGwilliam, R. / Gennaro, S. / Claudio, G. / Sealy, B.J. / Mulcahy, C. / Biswas, S. et al. | 2005
- 126
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Advanced 65nm CMOS devices fabricated using ultra-low energy plasma dopingWalther, S. / Lenoble, D. / Lallement, F. / Grouillet, A. / Erokhin, Y. / Singh, V. / Testoni, A. et al. | 2005
- 131
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Transient enhanced diffusion and deactivation of ion-implanted As in strained SiDilliway, G.D.M. / Smith, A.J. / Hamilton, J.J. / Benson, J. / Xu, Lu / McNally, P.J. / Cooke, G. / Kheyrandish, H. / Cowern, N.E.B. et al. | 2005
- 136
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Merits and demerits of light absorbers for ultra-shallow junction formation by green laser annealingMatsuno, Akira / Takii, Eisuke / Eto, Takanori / Kurobe, Ken-ichi / Shibahara, Kentaro et al. | 2005
- 142
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Reducing ultra-shallow boron diffusion using carbon and fluorine co-implantationVanderpool, Aaron / Taylor, Mitch et al. | 2005
- 148
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Poly-Si gate engineering for advanced CMOS transistors by germanium implantationBourdon, H. / Juhel, M. / Oudet, B. / Breil, N. / Lenoble, D. et al. | 2005
- 155
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The effects of energy non-monochromaticity of 11B ion beams on 11B diffusionChen, John / Shao, Lin / Lin, Tony / Liu, Jiarui / Chu, Wei-Kan et al. | 2005
- 160
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Nickel silicide formation on shallow junctionsJiang, Yu-Long / Agarwal, Aditya / Ru, Guo-Ping / Cai, Gary / Li, Bing-Zong et al. | 2005
- 167
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Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressingYu, C.H. / Yeh, P.H. / Chen, L.J. et al. | 2005
- 174
-
Enhanced thermal and morphological stability of Ni(Si1−xGex) growth on -preamorphized Si0.8Ge0.2 substrateHe, J.H. / Wu, W.W. / Chen, L.J. et al. | 2005
- 174
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Enhanced thermal and morphological stability of Ni(Si1−xGex) growth on Formula Not Shown -preamorphized Si0.8Ge0.2 substrateHe, J. H. / Wu, W. W. / Chen, L. J. et al. | 2005
- 179
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High-dose V+ implantation in ZnO thin film structuresVyatkin, A.F. / Zinenko, V.I. / Agaphonov, Yu.A. / Pustovit, A.N. / Roshchupkin, D.V. / Reuss, F. / Kirchner, C. / Kling, R. / Waag, A. et al. | 2005
- 183
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Dual gate oxide integrity improvement by implementing nitrogen implantation technologyLuoh, Tuung / Hsieh, Jung-Yu / Yang, Ling-Wuu / Huang, Chi-Tung / Chen, Kuang-Chao / Chung, Henry / Ku, Joseph / Lu, Chih-Yuan et al. | 2005
- 188
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New developments in the applications of proton beam writingMistry, P. / Gomez-Morilla, I. / Grime, G.W. / Webb, R.P. / Gwilliam, R. / Cansell, A. / Merchant, M. / Kirkby, K.J. / Teo, E.J. / Breese, M.B.H. et al. | 2005
- 193
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The influence of the ion implantation temperature and the flux on smart-cut© in GaAsWebb, M. / Jeynes, C. / Gwilliam, R.M. / Tabatabaian, Z. / Royle, A. / Sealy, B.J. et al. | 2005
- 197
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Investigation of silicon-on-insulator (SOI) substrate preparation using the smart-cutTM processChao, D.S. / Shu, D.Y. / Hung, S.B. / Hsieh, W.Y. / Tsai, M.-J. et al. | 2005
- 203
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Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantationHerden, Marc / Gehre, Daniel / Feudel, Thomas / Wei, Andy / Bersani, Massimo / Mannino, Giovanni / Berg, Jaap v.d. et al. | 2005
- 208
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Manufacturability of fully ion implanted planer-doped-barrier diodes in GaAsGwilliam, R. / Wang, Y.Y. / Kelly, M.J. / Kearney, M.J. et al. | 2005
- 213
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Thermal stability enhancement of silicides by using N2 and Ar implantationLuoh, Tuung / Liou, Maggie / Liu, Hung-Wei / Su, Chin-Ta / Hung, Yung-Tai / Yang, Ling-Wuu / Huang, Chi-Tung / Chen, Kuang-Chao / Chung, Henry / Ku, Joseph et al. | 2005
- 217
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Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealingLiao, K.F. / Chen, P.S. / Lee, S.W. / Chen, L.J. / Liu, C.W. et al. | 2005
- 223
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Characterization of polysilicon thin-film transistors with asymmetric source/drain implantationShieh, M.S. / Lin, Y.J. / Yu, C.M. / Lei, T.F. et al. | 2005
- 228
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Transistor challenges – A DRAM perspectiveFaul, Juergen W. / Henke, Dietmar et al. | 2005
- 235
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Gas cluster ion beams for wafer processingMack, M.E. et al. | 2005
- 240
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Development of polyatomic ion beam system using liquid organic materialsTakaoka, G.H. / Nishida, Y. / Yamamoto, T. / Kawashita, M. et al. | 2005
- 245
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Langmuir probe analysis of a BF3 discharge in a high current ion sourceMefo, J. / Sealy, B.J. / Collart, E.J.H. / Armour, D.G. / Gwilliam, R. et al. | 2005
- 250
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Very high uniformity mass analysed large area ion implantationAitken, Derek et al. | 2005
- 256
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ECR multi-charged ion source directly excited in a circular TE01 mode cavity resonatorKato, Yushi / Furuki, Hideyuki / Asaji, Toyohisa / Sasaki, Hiroshi / Ishii, Sigeyuki et al. | 2005
- 262
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An ECR ion source directly excited in a selected microwave mode cavity resonator for material processingAsaji, Toyohisa / Sasaki, Hiroshi / Furuki, Hideyuki / Kato, Yushi / Ishii, Shigeyuki / Kanazawa, Motoichi / Saito, Junji et al. | 2005
- 267
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Production of multicharged iron and nitrogen ions and application to enhance photo-catalytic performance in visible light region on TiO2 thin filmsKato, Yushi / Yoshinaga, Takashi / Tomida, Masashi / Kimpara, Shinichiro et al. | 2005
- 273
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Mass and energy analysis of the ions in a plasma flood systemWooding, A.C. / Armour, D.G. / van den Berg, J.A. / Holmes, A.J.T. / Burgess, C. / Goldberg, R.D. et al. | 2005
- 278
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Ion implantation of boron into silicon by use of the boron cathodic-arc plasma generator: First resultsWilliams, J.M. / Klepper, C.C. / Hazelton, R.C. et al. | 2005
- 284
-
Approaches to single wafer high current ion implantationRenau, A. et al. | 2005
- 290
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Enhancement of c-axis texture of AlN films by substrate implantationChen, C.H. / Yeh, J.M. / Hwang, J. et al. | 2005
- 296
-
Characterization of Pt oxide thin film fabricated by plasma immersion ion implantationChen, Yi-Chan / Sun, Yu-Ming / Yu, Shih-Ying / Hsiung, Chang-Po / Gan, Jon-Yiew / Kou, Chwung-Shan et al. | 2005
- 301
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Damage effect of fluorine implantation on PECVD α-SiOC barrier dielectricYang, F.M. / Chang, T.C. / Liu, P.T. / Chen, C.W. / Tai, Y.H. / Lou, J.C. et al. | 2005
- 307
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Determination of nitrogen-related defects in N-implanted ZnO films by dynamic cathodoluminescenceMei, Y.F. / Siu, G.G. / Fu, Ricky K.Y. / Wong, K.W. / Chu, Paul K. / Lai, C.W. / Ong, H.C. et al. | 2005
- 312
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Post-annealing effects on shallow-junction characteristics caused by 20keV BGe molecular ion implantationLiang, J.H. / Sang, Y.J. / Wang, C.-H. / Wang, T.W. / Hsu, J.Y. / Niu, H. / Tseng, M.S. et al. | 2005
- 318
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Implant process control: Going beyond particles and RSSing, D.C. / Rendon, M.J. et al. | 2005
- 324
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Carrier illumination measurement of dopant lateral diffusionBudiarto, E. / Segovia, M. / Borden, P. / Felch, S. et al. | 2005
- 330
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Characterization and reduction of a new particle defect mode in sub-0.25μm semiconductor process flowsPipes, Leonard / Taylor, Mitchell / Zietz, Gerard / Al-Bayati, Amir / Castle, Matthew / Marin, Tony / Simmons, Jonathon et al. | 2005
- 336
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Low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectrometry (SIMS) sensitivity studies to ultra shallow arsenic implantsGraoui, H. / Conti, G. / Hilkene, M. / McComb, B. / Tjandra, A. / Foad, M.A. / Kouzminov, D. / Hunter, J. / Hitzman, C.J. / Evans, C.A. et al. | 2005
- 341
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Investigations into the wear of a WL10 ion sourceHäublein, Volker / Sadrawetz, Simone / Frey, Lothar / Martinz, Hans-Peter / Ryssel, Heiner et al. | 2005
- 346
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Additional peaks in mass spectra due to charge exchange events and dissociation of molecular ions during extractionHäublein, Volker / Frey, Lothar / Ryssel, Heiner et al. | 2005
- 351
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Ultra-shallow junction (USJ) sheet resistance measurements with a non-penetrating four point probeBenjamin, M.C. / Hillard, R.J. / Borland, J.O. et al. | 2005
- 356
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Analyzing nitrogen concentration using carrier illumination (CI) technology for DPN ultra-thin gate oxideLi, W.S. / Wu, Bill / Fan, Aki / Kuo, C.W. / Segovia, M. / Kek, H.A. et al. | 2005
- 361
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In-line implant and RTP process monitoring using the carrier illumination techniqueLi, W.S. / Lim, H.K. / Fan, A. / Kuo, C.W. / Segovia, M. / Kek, H.A. et al. | 2005
- 365
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Tuning for optimal performance in angle control, uniformity, and energy purityLiebert, Reuel B. / Olson, Joseph C. / Arevalo, Edwin A. / Downey, Daniel F. et al. | 2005
- 372
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Mass resolution: The effects of resolving aperture and beam width on beam current and energetic contaminationFreer, B.S. / Graf, M.A. / Chow, J.L. / Tieger, D.R. / Sohl, C. et al. | 2005
- 378
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In situ beam angle measurement in a multi-wafer high current ion implanterFreer, B.S. / Reece, R.N. / Graf, M.A. / Parrill, T. / Polner, D. et al. | 2005
- 384
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Effects of implantation energy and annealing temperature on the structural evolution of Ge+-implanted amorphous SiHe, J.H. / Lin, H.H. / Wu, W.W. / Chen, L.J. et al. | 2005
- 390
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Silicon field emission array as novel charge neutralization device for high current ion implanterIshikawa, J. / Gotoh, Y. / Nakamura, K. / Kojima, T. / Tsuji, H. / Ikejiri, T. / Sakai, S. / Umisedo, S. / Nagai, N. / Nagao, M. et al. | 2005
- 395
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Flat panel display – Impurity doping technology for flat panel displaysSuzuki, Toshiharu et al. | 2005
- 402
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Fundamental characteristics of liquid cluster ion source for surface modificationTakaoka, G.H. / Noguchi, H. / Nakayama, K. / Hironaka, Y. / Kawashita, M. et al. | 2005
- 406
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Ultra-high resolution mass spectroscopy of boron cluster ionsJacobson, Dale / Horsky, Thomas / Krull, Wade / Milgate, Bob et al. | 2005
- 411
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Improvements of anti-corrosion and mechanical properties of NiTi orthopedic materials by acetylene, nitrogen and oxygen plasma immersion ion implantationPoon, Ray W.Y. / Ho, Joan P.Y. / Liu, Xuanyong / Chung, C.Y. / Chu, Paul K. / Yeung, Kelvin W.K. / Lu, William W. / Cheung, Kenneth M.C. et al. | 2005
- 417
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Surface modification of polymeric materials by plasma immersion ion implantationFu, Ricky K.Y. / Cheung, I.T.L. / Mei, Y.F. / Shek, C.H. / Siu, G.G. / Chu, Paul K. / Yang, W.M. / Leng, Y.X. / Huang, Y.X. / Tian, X.B. et al. | 2005
- 422
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Formation of almost delta-layered nanoparticles in SiO2 thin film on Si substrate by metal negative-ion implantationIshikawa, Junzo / Tsuji, Hiroshi / Arai, Nobutoshi / Matsumoto, Takuya / Ueno, Kazuya / Adachi, Kouichiro / Kotaki, Hiroshi / Gotoh, Yasuhito et al. | 2005
- 428
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Off-resonance microwave ion source for high-current molecular ion-beamsSakudo, N. / Ikenaga, N. / Nishimoto, R. / Tamashiro, Y. / Shinohara, T. / Ito, H. / Takahashi, T. et al. | 2005
- 433
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Silver negative-ion implantation to sol–gel TiO2 film for improving photocatalytic property under fluorescent lightTsuji, Hiroshi / Sakai, Noriaki / Sugahara, Hiromitsu / Gotoh, Yasuhito / Ishikawa, Junzo et al. | 2005
- 438
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Characterization of Formula Not Shown implanted monitor for rapid thermal processor temperature calibrationDrobny, V. F. / Robinson, D. et al. | 2005
- 438
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Characterization of implanted monitor for rapid thermal processor temperature calibrationDrobny, Vladimir F. / Robinson, Derek et al. | 2005
- 443
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Decaborane implantation with the medium current implanterHamamoto, Nariaki / Umisedo, Sei / Nagayama, Tsutomu / Tanjyo, Masayasu / Sakai, Shigeki / Nagai, Nobuo / Aoyama, Takayuki / Nara, Yasuo et al. | 2005
- 449
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Morphological evolution of surfaces irradiated by gas cluster ion beams during thin film depositionInoue, S. / Toyoda, N. / Tsubakino, H. / Yamada, I. et al. | 2005
- 455
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Development of 1mA cluster ion beam sourceSeki, T. / Matsuo, J. et al. | 2005
- 459
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Immobilization of extracellular matrix on polymeric materials by carbon-negative-ion implantationTsuji, Hiroshi / Sommani, Piyanuch / Muto, Takashi / Utagawa, Yoshiyuki / Sakai, Shun / Sato, Hiroko / Gotoh, Yasuhito / Ishikawa, Junzo et al. | 2005
- 465
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Morphology modifications of quantum dots on Si(001) surface by ion sputteringChen, H.C. / Huang, C.M. / Liao, K.F. / Lee, S.W. / Hsu, C.H. / Chen, L.J. et al. | 2005
- 470
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Nanostructure and adhesion of electroless-plated Cu film on the self-catalyzed Cu using metal-plasma ion implanterChen, Uei-Shin / Hsieh, Wei-Jen / Shih, Han C. / Chang, Yee-Shyi / Weng, Ko-Wei / Wang, Da-Yung et al. | 2005
- 477
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Characterization of copper metallization for interconnect by 90°-bend electromagnetic filtered vacuum arcChen, Uei-Shin / Shih, Han C. et al. | 2005
- CO2
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Editorial board| 2005
- ix
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Committees and Sponsors| 2005
- vii
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EditorialChen, Lih J. / Poate, John / Lei, Tan-Fu et al. | 2005
- xi
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Contents| 2005