Contact resistance extraction of graphene FET technologies based on individual device characterization (English)
- New search for: Pacheco-Sanchez, Anibal
- New search for: Feijoo, Pedro C.
- New search for: Jiménez, David
- New search for: Pacheco-Sanchez, Anibal
- New search for: Feijoo, Pedro C.
- New search for: Jiménez, David
In:
Solid-State Electronics
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172
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2020
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Contact resistance extraction of graphene FET technologies based on individual device characterization
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Contributors:
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Published in:Solid-State Electronics ; 172
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Publisher:
- New search for: Elsevier Ltd
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Publication date:2020-08-24
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 172
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Copper phthalocyanine buffer interlayer film incorporated in paper substrates for printed circuit boards and dielectric applications in flexible electronicsDomínguez, Miguel A. / Sosa-Sánchez, José L. et al. | 2020
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A unified aging compact model for hot carrier degradation under mixed-mode and reverse E-B stress in complementary SiGe HBTsMukherjee, C. / Fischer, G.G. / Marc, F. / Couret, M. / Zimmer, T. / Maneux, C. et al. | 2020
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New accurate approximation of the Einstein Relation for heavily-doped semiconductor devicesAlQurashi, Ahmed / Selvakumar, C.R. et al. | 2020
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Channel mobility and contact resistance in scaled ZnO thin-film transistorsMohamed, A.H. / Ghazali, N.A.B. / Chong, H.M.H. / Cobley, R.J. / Li, L. / Kalna, K. et al. | 2020
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On the charge transport mechanisms in Ge-rich GeSbTe alloysBourgine, Adrien / Grisolia, Jérémie / Vallet, Maxime / Benoit, Daniel / Le Friec, Y. / Caubet-Hilloutou, V. / Claverie, Alain et al. | 2020
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High-power electro-mechanical behavior of a capacitive microwave power sensor with warped cantilever beamLi, Jian-hua / Liao, Xiaoping et al. | 2020
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Abnormal double-hump phenomenon in amorphous In-Ga-Zn-O thin-film transistor under positive gate bias temperature stressKim, Yongjo / Ha, Tae-Kyoung / Yu, SangHee / Kim, GwangTae / Jeong, Hoon / Park, JeongKi / Kim, Ohyun et al. | 2020
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Electrical properties of MgO/GaN metal-oxide-semiconductor structuresOgidi-Ekoko, Onoriode N. / Goodrich, Justin C. / Howzen, Alexandra J. / Peart, Matthew R. / Strandwitz, Nicholas C. / Wierer, Jonathan J. Jr. / Tansu, Nelson et al. | 2020
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Ion implantation of aluminum in 4H-SiC epilayers from 90 keV to above 1 MeVSang, Ling / Xia, Jinghua / Jin, Rui / Wang, Yaohua / Zha, Yiying / Yang, Fei / Wu, Junmin et al. | 2020
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Editorial Board| 2020
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Automated extraction of barrier heights for asymmetric MIM tunneling diodesLin, Wallace / Lu, Darsen D. / Hong, Yi-Xiu / Hsu, Wei-Chou et al. | 2020
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Contact resistance extraction of graphene FET technologies based on individual device characterizationPacheco-Sanchez, Anibal / Feijoo, Pedro C. / Jiménez, David et al. | 2020
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RF simulation of self-aligned T-shape S/D contact InAs MOSFET on siliconCheng, Qi / Cui, Peng / Khandelwal, Sourabh / Zeng, Yuping et al. | 2020
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Effect of V2O5 interlayers in V2O5/Ge8Sb92 superlattice-like film on thermal stability and size scalingXu, Yongkang / Hu, Yifeng / Sun, Song / Zhu, Xiaoqin / Lai, Tianshu / Song, Sannian / Song, Zhitang et al. | 2020
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Electron mobility of strained InGaAs long-channel MOSFETs: From scattering rates to TCAD modelCarapezzi, Stefania / Reggiani, Susanna / Gnani, Elena / Gnudi, Antonio et al. | 2020
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Performance of pyrocatechol violet and carminic acid sensitized ZnO/CdS nanostructured photoactive materials for dye sensitized solar cellAnsir, Rotaba / Shah, Syed Mujtaba / Ullah, Naimat / Hussain, Muhammad Nasir et al. | 2020