Analysis and modelling of generation–recombination noise in amorphous semiconductors (English)
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In:
Thin Solid Films
;
427
, 1-2
;
133-136
;
2002
-
ISSN:
- Article (Journal) / Electronic Resource
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Title:Analysis and modelling of generation–recombination noise in amorphous semiconductors
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Contributors:
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Published in:Thin Solid Films ; 427, 1-2 ; 133-136
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Publisher:
- New search for: Elsevier Science B.V.
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Publication date:2002-01-01
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Size:4 pages
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ISSN:
-
DOI:
-
Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 427, Issue 1-2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Cluster-suppressed plasma CVD for deposition of high quality a-Si:H filmsShiratani, Masaharu / Koga, Kazunori / Watanabe, Yukio et al. | 2002
- 6
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Polymorphous silicon deposited in large area reactor at 13 and 27 MHzÁguas, H / Roca i Cabarrocas, P / Lebib, S / Silva, V / Fortunato, E / Martins, R et al. | 2002
- 11
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Surface diffusion of SiH3 radicals and growth mechanism of a-Si:H and microcrystalline SiDewarrat, R. / Robertson, J. et al. | 2002
- 16
-
VHF plasma processing for in-line deposition systemsRüdiger, J. / Brechtel, H. / Kottwitz, A. / Kuske, J. / Stephan, U. et al. | 2002
- 21
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Development of a numerical simulation tool to study uniformity of large area PECVD film processingSansonnens, L / Bondkowski, J / Mousel, S / Schmitt, J.P.M / Cassagne, V et al. | 2002
- 27
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Relationship between microstructure and photovoltaic performance in microcrystalline silicon film solar cells fabricated by a high-density microwave plasmaOhkawara, Go / Nakajima, Masanobu / Ueyama, Hiroyuki / Shirai, Hajime et al. | 2002
- 33
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A novel approach for the growth of μc-Si at a high rate over 3 nm/sTanda, M. / Kondo, M. / Matsuda, A. et al. | 2002
- 33
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A novel approach for the growth of mc-Si at a high rate over 3 nm/sTanda, M. / Kondo, M. / Matsuda, A. et al. | 2003
- 37
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High rate growth of microcrystalline silicon by VHF-GD at high pressureGraf, U. / Meier, J. / Kroll, U. / Bailat, J. / Droz, C. / Vallat-Sauvain, E. / Shah, A. et al. | 2002
- 41
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Investigation of scaling-up issues in hot-wire CVD of polycrystalline siliconvan der Werf, C.H.M. / Hardeman, A.J. / van Veenendaal, P.A.T.T. / van Veen, M.K. / Rath, J.K. / Schropp, R.E.I. et al. | 2002
- 46
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Preparation of microcrystalline silicon seed-layers with defined structural propertiesVetterl, O. / Hülsbeck, M. / Wolff, J. / Carius, R. / Finger, F. et al. | 2002
- 51
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Defects and transport properties of electron-irradiated microcrystalline silicon with successive annealingBronner, W. / Kleider, J.P. / Brüggemann, R. / Mehring, M. et al. | 2002
- 56
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High hole and electron field effect mobilities in nanocrystalline silicon deposited at 150 °CCheng, I-Chun / Wagner, Sigurd et al. | 2002
- 56
-
High hole and electron field effect mobilities in nanocrystalline silicon deposited at 150 degreeCCheng, I. C. / Wagner, S. et al. | 2003
- 60
-
Progressive degradation in a-Si:H/SiN thin film transistorsMerticaru, A.R. / Mouthaan, A.J. / Kuper, F.G. et al. | 2002
- 67
-
Effect of deposition conditions and dielectric plasma treatments on the electrical properties of microcrystalline silicon TFTsKasouit, S. / Roca i Cabarrocas, P. / Vanderhaghen, R. / Bonassieux, Y. / Elyaakoubi, M. / French, I. / Rocha, J. / Vitoux, B. et al. | 2002
- 71
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Dependence of TFT performance on the dielectric characteristicsLavareda, G. / Nunes de Carvalho, C. / Amaral, A. / Fortunato, E. / Ramos, A.R. / da Silva, M.F. et al. | 2002
- 77
-
Advanced excimer-laser crystallization process for single-crystalline thin film transistorsIshihara, Ryoichi / van der Wilt, Paul Ch. / van Dijk, Barry D. / Burtsev, Artyom / Metselaar, J.W. / Beenakker, C.I.M. et al. | 2002
- 86
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Excimer laser crystallization of amorphous silicon on metal coated glass substratesBrendel, K. / Nickel, N.H. / Lengsfeld, P. / Schöpke, A. / Sieber, I. / Nerding, M. / Strunk, H.P. / Fuhs, W. et al. | 2002
- 91
-
Crystallization mechanisms in laser irradiated thin amorphous silicon filmsMariucci, L. / Pecora, A. / Fortunato, G. / Spinella, C. / Bongiorno, C. et al. | 2002
- 96
-
Enhancement of bulk nucleation in a-Si1−xGex on SiO2 for low-temperature solid-phase crystallizationSadoh, T. / Tsunoda, I. / Nagata, T. / Kenjo, A. / Miyao, M. et al. | 2002
- 101
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Parametric investigation of SLS-processed poly-silicon thin films for TFT applicationsCrowder, M.A. / Moriguchi, M. / Mitani, Y. / Voutsas, A.T. et al. | 2002
- 108
-
Influence of precursors gases on LPCVD TFT's characteristicsRogel, R. / Gautier, G. / Coulon, N. / Sarret, M. / Bonnaud, O. et al. | 2002
- 113
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Origin of low frequency noise in polycrystalline silicon thin-film transistorsDimitriadis, Charalabos A. / Brini, Jean / Kamarinos, George et al. | 2002
- 117
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A new self-consistent model for the analysis of hot-carrier induced degradation in lightly doped drain (LDD) and gate overlapped LDD polysilicon TFTsValletta, A. / Mariucci, L. / Pecora, A. / Fortunato, G. / Ayres, J.R. / Brotherton, S.D. et al. | 2002
- 123
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Time-of-flight measurements of carrier drift mobilities in polymorphous siliconBrinza, M. / Adriaenssens, G.J. / Cabarrocas, P.Roca i et al. | 2002
- 127
-
Capacitance techniques for the evaluation of electronic properties and defects in disordered thin film semiconductorsKleider, J.P. et al. | 2002
- 133
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Analysis and modelling of generation–recombination noise in amorphous semiconductorsBadran, R.I. / Main, C. / Reynolds, S. et al. | 2002
- 137
-
Ellipsometric characterization of expanding thermal plasma deposited SiO2-like filmsCreatore, M. / Kilic, M. / O'Brien, K. / Groenen, R. / van de Sanden, M.C.M. et al. | 2002
- 142
-
Low temperature growth of SiO2 on SiC by plasma enhanced chemical vapor deposition for power device applicationsMandracci, P. / Ferrero, S. / Ricciardi, C. / Scaltrito, L. / Richieri, G. / Sgorlon, C. et al. | 2002
- 147
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Atomic layer deposition of polycrystalline HfO2 films by the HfI4–O2 precursor combinationSundqvist, J. / Hårsta, A. / Aarik, J. / Kukli, K. / Aidla, A. et al. | 2002
- 152
-
Standing wave detection by thin transparent n–i–p diodes of amorphous siliconStiebig, H. / Büchner, H.-J. / Bunte, E. / Mandryka, V. / Knipp, D. / Jäger, G. et al. | 2002
- 157
-
Microcrystalline silicon for large area thin film solar cellsRech, B. / Roschek, T. / Repmann, T. / Müller, J. / Schmitz, R. / Appenzeller, W. et al. | 2002
- 166
-
Experimental realization of field effect a-Si:H solar cellsDe Cesare, G. / Chicarella, F. / Palma, F. / Nobile, G. / Tucci, M. et al. | 2002
- 171
-
Study of the interface in n+μc-Si/p-type c-Si heterojunctions: role of the fluorine chemistry in the interface passivationLosurdo, M. / Grimaldi, A. / Sacchetti, A. / Capezzuto, P. / Ambrico, M. / Bruno, G. / Roca, Francesco et al. | 2002
- 171
-
Study of the interface in n+mc-Si/p-type c-Si heterojunctions: role of the fluorine chemistry in the interface passivationLosurdo, M. / Grimaldi, A. / Sacchetti, A. / Capezzuto, P. / Ambrico, M. / Bruno, G. / Roca, F. et al. | 2003
- 176
-
Laser-crystallized microcrystalline SiGe alloys for thin film solar cellsEisele, C. / Berger, M. / Nerding, M. / Strunk, H.P. / Nebel, C.E. / Stutzmann, M. et al. | 2002
- 181
-
Low-temperature thin-film silicon MEMSConde, J.P. / Gaspar, J. / Chu, V. et al. | 2002
- 187
-
Characterization of polycrystalline SiC layers grown by ECR-PECVD for micro-electro-mechanical systemsRicciardi, C. / Bennici, E. / Cocuzza, M. / Mandracci, P. / Bich, D. / Guglielmetti, V. / Barucca, G. et al. | 2002
- 191
-
A novel a-Si:H mechanical stress sensorde Cesare, G / Gavesi, M / Palma, F / Riccò, B et al. | 2002
- 196
-
Bias controlled spectral sensitivity in a-SiC:H p–i–n devicesLouro, P. / Vieira, M. / Fantoni, A. / Fernandes, M. / Vygranenko, Yu. / Schwarz, R. et al. | 2002
- 201
-
Surface functionalization of amorphous silicon and silicon suboxides for biological applicationsDahmen, C. / Janotta, A. / Dimova-Malinovska, D. / Marx, S. / Jeschke, B. / Nies, B. / Kessler, H. / Stutzmann, M. et al. | 2002
- 201
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Surface functionalization of amorphous silicon and suboxides for biological applicationsDahmen, C. / Dimova-Malinovska, D. / Marx, S. / Jeschke, B. / Nies, B. / Kessler, H. / Stutzmann, M. et al. | 2003
- 208
-
Deposition of transparent conductive tin oxide thin films doped with fluorine by PACVDArefi-Khonsari, F / Bauduin, N / Donsanti, F / Amouroux, J et al. | 2002
- 215
-
Properties of ITO films deposited by r.f.-PERTE on unheated polymer substrates—dependence on oxygen partial pressureNunes de Carvalho, C. / Lavareda, G. / Fortunato, E. / Amaral, A. et al. | 2002
- 219
-
Modelling and experimental study of an O2/Ar/tetramethyltin discharge used for the deposition of transparent conductive thin tin oxide filmsMorscheidt, W. / Hassouni, K. / Arefi-Khonsari, F. / Amouroux, J. et al. | 2002
- 225
-
From porous to compact films by changing the onset conditions of HW-CVD processFerreira, I. / Costa, M.E.V. / Fortunato, E. / Martins, R. et al. | 2002
- 231
-
Combining HW-CVD and PECVD techniques to produce a-Si:H filmsFerreira, I. / Fortunato, E. / Martins, R. et al. | 2002
- 236
-
Plasma studies under polymorphous silicon deposition conditionsKharchenko, A.V. / Suendo, V. / Roca i Cabarrocas, P. et al. | 2002
- 241
-
What makes a thin films semiconductor suitable for solar cells applications?Saadane, O. / Longeaud, C. / Lebib, S. / Roca i Cabarrocas, P. et al. | 2002
- 247
-
Study of pm-SiGe:H thin films for p–i–n devices and tandem solar cellsGueunier, M.E. / Kleider, J.P. / Chatterjee, P. / Roca i Cabarrocas, P. / Poissant, Y. et al. | 2002
- 252
-
Pronounced crystallization of silicon layers deposited with high deposition rates at temperatures 200 degreeCLeconte, Y. / Marie, P. / Portier, X. / Lejeune, M. / Rizk, R. et al. | 2003
- 252
-
Pronounced crystallization of silicon layers deposited with high deposition rates at temperatures ⩽200 °CLeconte, Y. / Marie, P. / Portier, X. / Lejeune, M. / Rizk, R. et al. | 2002
- 252
-
Pronounced crystallization of silicon layers deposited with high deposition rates at temperaturesLeconte, A. / Marie, P. / Portier, X. / Lejeune, M. / Rizk, R. et al. | 2003
- 259
-
The properties of fluoride/glass and fluoride/siliconKo, Jae kyung / Kim, Do young / Park, Joong Hyun / Choi, Seok-Won / Park, Sung Hyun / Yi, Junsin et al. | 2002
- 266
-
Raman spectroscopy of B-doped microcrystalline silicon filmsSaleh, R. / Nickel, N.H. et al. | 2002
- 270
-
Alternative phosphorus-doped amorphous silicon using trimethylphosphine diluted in hydrogenTerasa, R. / Albert, M. / Bartha, J.W. / Roessler, T. / Abramov, A.S. / Kosarev, A.I. / Kuduyarova, V.K. / Vinogradov, A. et al. | 2002
- 274
-
Low-temperature epitaxial growth of B doped Si films on Si(100) and Si(111)Schwarzkopf, J. / Selle, B. / Schmidbauer, M. / Fuhs, W. et al. | 2002
- 279
-
Properties of a-SiC:H films deposited in high power regimeAmbrosone, G. / Ballarini, V. / Coscia, U. / Ferrero, S. / Giorgis, F. / Maddalena, P. / Patelli, A. / Rava, P. / Rigato, V. et al. | 2002
- 284
-
Power density effects on the growth of microcrystalline silicon-carbon alloys of PECVDCoscia, U. / Ambrosone, G. / Lettieri, S. / Maddalena, P. / Rava, P. / Minarini, C. et al. | 2003
- 284
-
Power density effects on the growth of microcrystalline silicon–carbon alloys by PECVDCoscia, U. / Ambrosone, G. / Lettieri, S. / Maddalena, P. / Rava, P. / Minarini, C. et al. | 2002
- 289
-
Temperature dependence of the growth of super-grain polycrystalline silicon by metal induced crystallizationChoi, Jong Hyun / Kim, Do Young / Park, Seong Jin / Choo, Byoung Kwon / Jang, Jin et al. | 2002
- 294
-
Nickel-enhanced low-temperature epitaxial growth of siliconUchida, Y. / Katsumata, N. / Ishida, K. et al. | 2002
- 298
-
Preparation of thin polycrystalline silicon films on glass by aluminium-induced crystallisation—an electron microscopy studySieber, I. / Schneider, R. / Doerfel, I. / Schubert-Bischoff, P. / Gall, S. / Fuhs, W. et al. | 2002
- 303
-
High temperature crystallized poly-Si on Mo substrates for TFT applicationPark, Joong Hyun / Kim, Do Young / Ko, Jae Kyung / Chakrabarty, K. / Yi, Junsin et al. | 2002
- 309
-
Phase-field modelling of excimer laser lateral crystallization of silicon thin filmsBurtsev, A. / Apel, M. / Ishihara, R. / Beenakker, C.I.M. et al. | 2002
- 314
-
Lateral growth control by thickness spatial modulation of amorphous silicon filmPecora, A. / Mariucci, L. / Piperno, S. / Fortunato, G. et al. | 2002
- 319
-
Observation of super lateral growth in long pulse (170 ns) excimer laser crystallization of a-Si filmsPecora, A. / Carluccio, R. / Mariucci, L. / Fortunato, G. / Murra, D. / Bollanti, S. / Di Lazzaro, P. et al. | 2002
- 324
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Current assisted germanium-induced crystallization of amorphous siliconDerakhshandeh, J. / Golshani, N. / Mohajerzadeh, S. / Asl Soleimani, E. et al. | 2002
- 330
-
Low temperature stress-induced crystallization of germanium on plasticShahrjerdi, D. / Hekmatshoar, B. / Rezaee, L. / Mohajerzadeh, S.S. et al. | 2002
- 335
-
DTRMC, a probe of transverse transport in microcrystalline siliconKasouit, S. / Roca i Cabarrocas, P. / Vanderhaghen, R. et al. | 2002
- 340
-
State creation under gate-bias stress in polysilicon TFTs studied from the temperature-transfer characteristics behaviorToutah, H. / Llibre, J.F. / Tala-Ighil, B. / Boudart, B. / Mohammed-Brahim, T. et al. | 2002
- 345
-
Spectroscopic ellipsometry study of amorphous silicon anodically oxidisedÁguas, H. / Gonçalves, A. / Pereira, L. / Silva, R. / Fortunato, E. / Martins, R. et al. | 2002
- 350
-
Meyer–Neldel parameter as a figure of merit for quality of thin-film-transistor active layer?Pichon, L / Mercha, A / Routoure, J.M / Carin, R / Bonnaud, O / Mohammed-Brahim, T et al. | 2002
- 355
-
Parameters for photoelectronic characterisation and the Fermi level in amorphous siliconBrüggemann, R. et al. | 2002
- 358
-
Thickness dependence of optical scattering and surface roughness in microcrystalline siliconBrüggemann, R. / Reinig, P. / Hölling, M. et al. | 2002
- 362
-
Design of a polysilicon-on-insulator pressure sensor with original polysilicon layout for harsh environmentMalhaire, C. / Barbier, D. et al. | 2002
- 367
-
Pentacene thin-films obtained by thermal evaporation in high vacuumPuigdollers, J. / Voz, C. / Orpella, A. / Martin, I. / Vetter, M. / Alcubilla, R. et al. | 2002
- 371
-
Study of organic thin film transistors based on nickel phthalocyanine: effect of annealingBen Chaabane, R. / Ltaief, A. / Dridi, C. / Rahmouni, H. / Bouazizi, A. / Ben Ouada, H. et al. | 2002
- 377
-
Plasma and injection modification of the gate dielectric in MOS structuresBondarenko, G.G. / Andreev, V.V. / Maslovsky, V.M. / Stolyarov, A.A. / Drach, V.E. et al. | 2002
- 381
-
Characterization of carrier generation and transport mechanisms in single-crystal and thin-film HgI2Khadilkar, U. / Mamazza, R. / Ferekides, C.S. / Morel, D.L. / DeVito, R. / Sandoval, J. / van den Berg, L. et al. | 2002
- 386
-
Improvement of the properties of commercial SnO2 by Cd treatmentNapo, K. / Kadi Allah, F. / Bernède, J.C. / Barreau, N. / Khelil, A. et al. | 2002
- 391
-
Characterisation of HfO2 deposited by photo-induced chemical vapour depositionFang, Q. / Zhang, J.-Y. / Wang, Z.M. / Wu, J.X. / O'Sullivan, B.J. / Hurley, P.K. / Leedham, T.L. / Davies, H. / Audier, M.A. / Jimenez, C. et al. | 2002
- 397
-
Highly transparent and conducting CdO films grown by chemical spray pyrolysisRamakrishna Reddy, K.T. / Shanthini, G.M. / Johnston, D. / Miles, R.W. et al. | 2002
- 401
-
Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperatureAssunção, V. / Fortunato, E. / Marques, A. / Águas, H. / Ferreira, I. / Costa, M.E.V. / Martins, R. et al. | 2002
- 406
-
On the physical properties of indium oxide thin films deposited by pyrosol in comparison with films deposited by pneumatic spray pyrolysisGirtan, Mihaela / Cachet, H / Rusu, G.I et al. | 2002
- 411
-
High uniformity deposition with chemical beams in high vacuumBenvenuti, G. / Halary-Wagner, E. / Brioude, A. / Hoffmann, P. et al. | 2002
- 417
-
XTEM characterization of tungsten implanted SiC thin films on silicon for field emission devicesLindner, J.K.N. / Tsang, W.M. / Wong, S.P. / Xu, J.B. / Wilson, I.H. et al. | 2002
- 422
-
Polycrystalline silicon thin films for MEMS applicationsMahfoz-Kotb, H. / Salaün, A.C. / Mohammed-Brahim, T. / Le Bihan, F. / El-Marssi, M. et al. | 2002
- 427
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Substrate influence on the response of sol–gel derived SnO2 gas-sensorsDima, A / Dima, O / Moldovan, C / Cobianu, C / Savaniu, C / Zaharescu, M et al. | 2002
- 432
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Author Index| 2003
- 434
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Subject Index| 2003
- ix
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PrefaceRoca i Cabarrocas, Pere et al. | 2002