Physical and technological limits in optical and x-ray lithography (English)
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In:
Microelectronic Engineering
;
6
, 1-4
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53-60
;
1987
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Physical and technological limits in optical and x-ray lithography
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Contributors:Arden, Wolfgang ( author ) / Müller, Karl-Heinz ( author )
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Published in:Microelectronic Engineering ; 6, 1-4 ; 53-60
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Publisher:
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Publication date:1987-01-01
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Size:8 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 6, Issue 1-4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Process integration conceptBarbuscia, G. / Traversini, R. et al. | 1987
- 15
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An integrated approach to defect detection, analysis and reduction in photolithographyCastel, Egil D. / Ray, Alan B. et al. | 1987
- 23
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Analysis strategy for internal measurements on VLSI devicesKölzer, Jochen / Frieling, Focko / Cutter, David et al. | 1987
- 31
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The future of subhalf-micrometer optical lithographyLin, Burn J. et al. | 1987
- 53
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Physical and technological limits in optical and x-ray lithographyArden, Wolfgang / Müller, Karl-Heinz et al. | 1987
- 61
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Experience with deep UV excimer laser lithographyGoodall, F / A Lawes, R et al. | 1987
- 69
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Linewidth control in deep UV contact lithographyIost, Michel / Gourrier, Serge / Bru, Bernard / Rabinzohn, Patrick / Pasqualini, François et al. | 1987
- 77
-
Direct writing laser lithography for production of microstructuresUlrich, H. / Wijnaendts-van-Resandt, R.W. / Rensch, C. / Ehrensperger, W. et al. | 1987
- 85
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Spin-on dry ETCH ARC process for submicron lithographyLamb, James E. III / Hawely, Donna D. / Mori, J.Michael et al. | 1987
- 93
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Monte Carlo simulation of fast electron beam pattern generatorsvan der Mast, K.D. / Jansen, G.H. et al. | 1987
- 99
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Electron energy spread in high-voltage variable shape E-beam lithography systemsNorris, T.S. / Jones, G.A.C. / Ahmed, H. et al. | 1987
- 105
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Pulsed field emission electron or ion gun with energy filterTroyon, Michel et al. | 1987
- 111
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An electron optical line source for microelectronic engineeringBrodie, A.D. / Nixon, W.C. et al. | 1987
- 117
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Alignment markers for e-beam writing of the gate level pattern: Fabrication in an intermediate stage and alignment accuracyPatovan, R. / Caro, J. / Romijn, J. / Radelaar, S. et al. | 1987
- 123
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High resolution e-beam lithography for X-ray mask makingPongratz, S. / Reimer, K. / Demmeler, R. / Ehrlich, Ch. et al. | 1987
- 129
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Precise lithography for component integral optics of nanometer rangeAristov, V.V. / Babin, S.V. / Davydov, A.V. / Erko, A.I. / Svintsov, A.A. / Redkin, S.V. et al. | 1987
- 135
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Performance modelling of pattern recognition techniques for calibration and registration mark detectionPenberth, M.J. / Rix, N.F. et al. | 1987
- 141
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Large data buffer for electron beam lithographyMelot, J.P. / Sloman, A.W. / Penberth, M.J. et al. | 1987
- 147
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Three-dimensional development of electron beam exposed resist patterns simulated by using ray tracing modelJia, Li / Jian-kun, Wang / Shao-jun, Wang et al. | 1987
- 155
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NanofabricationWilkinson, C.D.W. et al. | 1987
- 163
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Fabrication of nanometer width GaAs/AlGaAs and InGaAs/InP quantum wiresMaile, B.E. / Forchel, A. / Germann, R. / Menschig, A. / Streubel, K. / Scholz, F. / Weimann, G. / Schlapp, W. et al. | 1987
- 169
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Fabrication of GaAs heterojunction ring structuresFord, C.J.B. / Ahmed, H. et al. | 1987
- 175
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Nanostructures for quantum physicsBellessa, J. / Carcenac, F. / Izrael, A. / Launois, H. / Mailly, D. et al. | 1987
- 181
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Fabrication of nanometer-scale devices for studies of flux pinning in superconducting double layers of a-Nb3Ge and NBNv.d. Drift, E. / Radelaar, S. / Pruymboom, A. / Kes, P.H. et al. | 1987
- 189
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Fabrication of tenth-micron scale structures for semiconductor laser devicesFice, M.J. / Ahmed, H. / Clements, S.J. et al. | 1987
- 195
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Nanostructures in gallium arsenide TEGFETJin, Y. / Mailly, D. / Carcenac, F. / Etienne, B. / Launois, H. et al. | 1987
- 201
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Two methods for reaching electron nanolithography domainBalladore, J.L. / Pyee, M. / Camon, H. / Bourdel, E. / Martinez, J.P. / Sekkaki, N. et al. | 1987
- 207
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Fabrication of fine and smooth curved features by e-beam lithography systemOhki, H. / Nakazawa, H. / Kosaka, Y. / Sato, H. / Asari, T. / Isobe, M. et al. | 1987
- 215
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Fabrication of halfmicron MOSFETs by means of x-ray lithographyLauer, V. / Bauer, F. / Korec, J. / Huber, H.-L. / Balk, P. et al. | 1987
- 221
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The influence of photoelectrons and flourescence radiation on resolution in x-ray lithographyChlebek, J. / Betz, H. / Heuberger, A. / Huber, H.-L. et al. | 1987
- 227
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An x-ray projection method using zone plates for mask preparation with sub-micron sizesBurge, R.E. / Browne, M.T. / Charalambous, P. et al. | 1987
- 233
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Electrical resistivity and radiation damage in boro-hydro-nitride x-ray lithography mask substratesDana, S.S. / Batey, J. / Maldonado, J.R. / Vladimirsky, O. / Fair, R. / Viswanathan, R. et al. | 1987
- 241
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Non hydrogenated materials for x-ray masks (Si3N4 and SiC)Madouri, A. / Gosnet, A.M. / Bourneix, J. et al. | 1987
- 247
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Application of lead electroplating for x-ray absorber patterningTrube, J. / Huber, H.-L. / Löchel, B. / Windbracke, W. et al. | 1987
- 253
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Optimization of the stresses in tungsten sputtered films, study of their stabilityGosnet, A.M. / Ladan, F.R. / Joncour, M.C. / Gao, Y. et al. | 1987
- 259
-
Improved tungsten absorber technology for sub-half-micron x-ray lithographyLuethje, H. / Harms, M. / Bruns, A. / Mackens, U. et al. | 1987
- 265
-
Influence of phase shift on pattern transfer in x-ray lithographyWeiss, M. / Oertel, H. / Huber, H.-L. et al. | 1987
- 273
-
Microgap x-ray nanolithographySchattenburg, M.L. / Tanaka, I. / Smith, Henry I. et al. | 1987
- 281
-
X-ray lithography with laser-plasma sourcesToubhans, I. / Fabbro, R. / Faral, B. / Chaker, M. / Pepin, H. et al. | 1987
- 287
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X-ray lithography using a KrF laser-plasma source at hν ≈ 1 keVTurcu, Edmond / Davis, Gillian / Gower, Malcolm / O'Neill, Fergus / Lawless, Martin et al. | 1987
- 293
-
A synchrotron compatible production oriented x-ray stepperThompson, P. / Cullmann, E. / Vach, W. / Müller, K.H. et al. | 1987
- 299
-
A new silicon nitride mask technology for synchrotron radiation x-ray lithography: First resultsVisser, C.C.G. / Uglow, J.E. / Burns, D.W. / Wells, G. / Redaelli, R. / Cerrina, F. / Guckel, H. et al. | 1987
- 305
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X-ray lithography using silicon nitride masks and the kodak 771 negative resistEwald, Detlef et al. | 1987
- 315
-
Current work on focused ion beams in JapanNamba, Susumu et al. | 1987
- 327
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An optimized two lens optical column for use with a liquid metal ion sourceOrloff, Jon et al. | 1987
- 333
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Open silicon stencil masks for demagnifying ion projectionHeuberger, A. / Buchmann, L.-M. / Csepregi, L. / Müller, K.P. et al. | 1987
- 343
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Nanometer structure fabricated by FIB and its observation by STMKomuro, M. / Okayama, S. / Kitamura, O. / Mizutani, W. / Tokumoto, H. / Kajimura, K. et al. | 1987
- 349
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Metal droplet beams in M.E. technology: Production, focusing and depositionAssayag, Gérard Ben / Sudraud, Pierre / Alaoui, Fathia / Swanson, L.W. et al. | 1987
- 355
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Particularities in the development characteristics of ion beam exposed positive polymer resistsDavid, Philippe / Karapiperis, Leonidas et al. | 1987
- 361
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Development of a focused-ion-beam lithography systemSawaragi, H. / Aihara, R. / Matsui, S. / Mori, K. / Shearer, M.Hassel et al. | 1987
- 369
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Resist overviewCoopmans, Fedor et al. | 1987
- 381
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The nature of titanium-containing films formed on polymer surfaces by reactions of sorbed water with TiCl4Stillwagon, L.E. / Vasile, M.J. / Baiocchi, F.A. / Silverman, P.J. / Taylor, G.N. et al. | 1987
- 393
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An organosilicon photoresist for use in excimer laser lithographyOrvek, Kevin J. / Cunningham, Wells C. Jr. / McFarland, Janet C. et al. | 1987
- 399
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Contribution to the study of polysilanes for photolithographyRosilio, C. / Rosilio, A. / Serre, B. et al. | 1987
- 407
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Resist image enhancement by UV-, soft vacuum pulsed electron beams and organometallic compoundsHiraoka, Hiroyuki et al. | 1987
- 413
-
Wet and dry developable photosensitive deep UV resistHan, C.C. / Corelli, J.C. et al. | 1987
- 421
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A-and B-parameter dependent submicron stepper performance of positive type photoresistMünzel, H. / Lux, J. / Schulz, R. et al. | 1987
- 427
-
Photoresist spin coating mechanism related to polymer solution rheologyWeill, Andre / Francou, Jean Marc / Dechenaux, Elisabeth et al. | 1987
- 433
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Synthesis and studies of resists bearing tetrathiafulvalene groups and sensitive to U.V. and electron beam irradiationsSchue, F. / Monginoul, C. / Fabre, J.M. / Giral, L. / Mungroo, A. / Sagnes, R. et al. | 1987
- 439
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Diffusion in AZ-5214 image reversal process and its application to e-beam proximity effect correctionLiu, Hua-yu / Liu, E.D. et al. | 1987
- 447
-
Focused ion beam lithography using Al2O3 resistOhta, Tsuneaki / Kanayama, Toshihiko / Komuro, Masanori et al. | 1987
- 453
-
The use of organosilicon polymers in multilayer plasma resist processingParaszczak, J. / Babich, E. / McGouey, R. / Heidenreich, J. / Hatzakis, M. / Shaw, J. et al. | 1987
- 461
-
The optimum contrast enhancement layer in microlithographyMeyerhofer, Dietrich et al. | 1987
- 467
-
A study of catalytically transformed negative X-ray resists, based on aqueous base developable resin, an acid generator and a crosslinkerBruns, A. / Luethje, H. / Vollenbroek, F.A. / Spiertz, E.J. et al. | 1987
- 473
-
A comparison of electron sensitive single, Bi-, and tri-level resist schemes for the fabrication of sub-micron gate structures in doped polysiliconWillis, H. / Brown, A.G. / Till, S.J. / Mortimer, S.H. et al. | 1987
- 479
-
Self-development rate of resists exposed to energetic ions (10 keV – 500 keV)Bahna, Zahed / Merhari, Lhadi / Moliton, Jean-Pierre et al. | 1987
- 487
-
An improved bilayer PMGI(1) lithographic processGuibert, J.C. / Chevalier, M. / Paniez, P. / Amblard, G. et al. | 1987
- 495
-
Built in mask (BIM) : A new way to a submicron process with high resolution and good latitudeVollenbroek, F.A. / Nijssen, W.P.M. / Geomini, M.J.H.J. / Mutsaers, C.M.J. / Visser, R.J. et al. | 1987
- 503
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Photocatalytic novolak-based positive resist for X-ray lithography - kinetics and simulation -Dammel, R. / Dössel, K.F. / Lingnau, J. / Theis, J. / Huber, H.L. / Oertel, H. et al. | 1987
- 511
-
A comparison of the E-beam and UV-sensitivities and relative O2- plasma stabilities of organosilicon polymers.Part II. Lithographic characteristics of polysilphenylene siloxanes and some organic polymers with pendant silyl groupsBabich, E. / Shaw, J. / Hatzakis, M. / Paraszczak, J. / Lenz, R.W. / Dvornich, P.R. et al. | 1987
- 519
-
Evaluation of x-ray resists for submicron lithographyRedaelli, R. / Wells, G.M. / Cerrina, F. / Crapella, S. / Vento, G. et al. | 1987
- 527
-
Characterization of the lithographic properties of inorganic resists with nanometre resolution on bulk substratesMacaulay, J.M. / Berger, S.D. et al. | 1987
- 535
-
Characteristics of maskless ion beam assisted etching of SiO2Xu, Zheng / Gamo, Kenji / Namba, Susumu et al. | 1987
- 541
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Fabrication by tri-level electron beam lithography of X-ray masks with 50nm linewidths, and replication by X-ray nanolithographyAnderson, Erik H. / Kern, D.P. / Smith, Henry I. et al. | 1987
- 547
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Fabrication of 15 μm thick Si-hole masks for demagnifying projection systems for ion- or electron-beamsOlschimke, J. / Rangelow, I.W. / Tschudi, T. / Kassing, R. et al. | 1987
- 553
-
RIE etching of deep trenches in Si using CBrF3 and SF6 plasmaKrings, A.M. / Eden, K. / Beneking, H. et al. | 1987
- 559
-
In-situ temperature measurements for aluminum etchingCastricher, G. / Banks, P.M. / Pang, T-M. / Baumann, P. / Grünwald, H. / Hussla, I. / Lorenz, G. / Stoll, H. / Ramisch, H. et al. | 1987
- 565
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X-ray microscope images with Fresnel zone plates fabricated by electron beam nanolithographyUnger, P. / Bögli, V. / Beneking, H. / Niemann, B. / Guttmann, P. et al. | 1987
- 571
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λ/4 shifted 1st and 2nd order DFB-gratings for InGaAs/InP lasersKorn, M. / Forchel, A. / Möhrle, M. / Germann, R. / Streubel, K. / Scholz, F. et al. | 1987
- 575
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Fractal micropatterns generated by anodic etchingHarsányi, J. / Habermeier, H.-U. et al. | 1987
- 583
-
Focused ion beam repair in microelectronicsSudraud, Pierre / Benassayag, Gérard / Bon, Michel et al. | 1987
- 597
-
Comparison of focused ion beam and laser techniques for optical mask repairHeard, P.J. / Prewett, P.D. / Lawes, R.A. et al. | 1987
- 605
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Custom IC repairs using focused ion beamsClampitt, R. / Watkins, R. / Whitaker, J. et al. | 1987
- 611
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Elimination of substrate damage in focused-ion-beam repair of photomaskOnoda, H. / Morimoto, H. / Kawashima, M. / Watakabe, Y. / Kato, T. et al. | 1987
- 617
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Identification and removal of opaque defects on X-ray masks in a focussed ion beam repair systemWeigmann, U. / Burghause, H. / Schaffer, H. et al. | 1987
- 623
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Repair of clear X-ray mask defects by laser-induced metal depositionPetzold, H.-C. / Putzar, R. / Weigmann, U. / Wilke, I. et al. | 1987
- 631
-
Accurate image modeling for submicron CD optical controlGuillaume, M.E. / Livrozet, P. / Buevoz, J.L. / Alcouffe-Noailly, N. et al. | 1987
- 637
-
A new signal processing method for overlay and grid characterization measurementsHignette, O. / Noailly, N.Alcouffe / Guillaume, M.E. et al. | 1987
- 645
-
Precise linewidth measurement using the electron beam metrology systemMatsuoka, Genya / Murakoshi, Hisaya / Yamamoto, Kenichi / Ichihashi, Mikio et al. | 1987
- 653
-
Linewidth metrology for x-ray masks with subhalfmicron feature sizeMescheder, U. / Mund, F. / Huber, H.-L. et al. | 1987
- 661
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IC-internal logic verification using an integrated electron beam measurement systemGörlich, S. / Harbeck, H. / Keβler, P. et al. | 1987
- 667
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In-the-lens electron spectrometers for E-beam testing: A reviewGarth, S.C.J. et al. | 1987
- 673
-
The influence of different SEM parameters on CD measurement resultsTollkamp-Schierjott, C. et al. | 1987
- 679
-
The use of S.E.M. for linewidth measurementsBurlet, Daniel / Martin, Herve et al. | 1987
- 683
-
Ultra high speed electron beam testing systemThong, J.T.L. / Garth, S.C.J. / Breton, B.C. / Nixon, W.C. et al. | 1987
- 689
-
LMS 2000 — A new metrology toolPaul, H.-H. et al. | 1987
- 693
-
Inspection and process control in DSW lithographyDusa, Mircea / Drǎgan, Gabriela et al. | 1987
- 699
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Author index volume 6 (1987)| 1987
- ii
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Editorial Board| 1987
- v
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PrefacePerrocheau, J. et al. | 1987