Study of the nucleation and growth of InP nanowires on silicon with gold-indium catalyst (English)
- New search for: Mavel, Amaury
- New search for: Chauvin, Nicolas
- New search for: Regreny, Philippe
- New search for: Patriarche, Gilles
- New search for: Masenelli, Bruno
- New search for: Gendry, Michel
- New search for: Mavel, Amaury
- New search for: Chauvin, Nicolas
- New search for: Regreny, Philippe
- New search for: Patriarche, Gilles
- New search for: Masenelli, Bruno
- New search for: Gendry, Michel
In:
Journal of Crystal Growth
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458
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96-102
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2016
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Study of the nucleation and growth of InP nanowires on silicon with gold-indium catalyst
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Contributors:Mavel, Amaury ( author ) / Chauvin, Nicolas ( author ) / Regreny, Philippe ( author ) / Patriarche, Gilles ( author ) / Masenelli, Bruno ( author ) / Gendry, Michel ( author )
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Published in:Journal of Crystal Growth ; 458 ; 96-102
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Publisher:
- New search for: Elsevier B.V.
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Publication date:2016-11-04
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Size:7 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 458
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Growth of lattice-matched GaInAsP grown on vicinal GaAs(001) substrates within the miscibility gap for solar cellsOshima, Ryuji / France, Ryan M. / Geisz, John F. / Norman, Andrew G. / Steiner, Myles A. et al. | 2016
- 8
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Non-classical crystallization of silicon thin films during hot wire chemical vapor depositionJung, Jae-Soo / Lee, Sang-Hoon / Kim, Da-Seul / Kim, Kun-Su / Park, Soon-Won / Hwang, Nong-Moon et al. | 2016
- 16
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Travelling-solvent floating-zone growth of the dilutely Co-doped spin-ladder compound Sr14(Cu, Co)24O41Bag, Rabindranath / Karmakar, Koushik / Singh, Surjeet et al. | 2016
- 27
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Behavior of crystal defects in synthetic type-IIa single-crystalline diamond at high temperatures under normal pressureTatsumi, Natsuo / Tamasaku, Kenji / Ito, Toshimichi / Sumiya, Hitoshi et al. | 2016
- 31
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Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacketZhao, Wenhan / Liu, Lijun et al. | 2016
- 37
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Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solventsKomatsu, Naoyoshi / Mitani, Takeshi / Hayashi, Yuichiro / Kato, Tomohisa / Harada, Shunta / Ujihara, Toru / Okumura, Hajime et al. | 2016
- 44
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Crystal growth of aragonite in the presence of phosphateTadier, Solène / Rokidi, Stamatia / Rey, Christian / Combes, Christèle / Koutsoukos, Petros G. et al. | 2016
- 53
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An investigation of near-infrared photoluminescence from AP-MOVPE grown InSb/GaSb quantum dot structuresAhia, C.C. / Tile, N. / Urgessa, Z.N. / Botha, J.R. / Neethling, J.H. et al. | 2016
- 60
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The effect of glycine on the growth of calcium carbonate in alkaline silica gelGan, Xiong / He, Kunhuan / Qian, Baosong / Deng, Qin / Lu, Laixian / Wang, Yun et al. | 2016
- 66
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Effect of Sn doping on improvement of minority carrier lifetime of Fe contaminated p-type multi-crystalline Si ingotSun, Jifei / He, Qiuxiang / Ban, Boyuan / Bai, Xiaolong / Li, Jingwei / Chen, Jian et al. | 2016
- 72
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A new heating stage for high Temperature/low fO2 conditionsTissandier, L. / Florentin, L. / Lequin, D. / Baillot, P. / Faure, F. et al. | 2016
- 80
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Modelling and experiments for the convecto-diffusive removal of impurities from the solidification frontAltenberend, J. / Delannoy, Y. / Nehari, A. / Chichignoud, G. / Zaidat, K. et al. | 2016
- 87
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Codeposited pentacene:perfluoropentacene grown on SiO2: A microstructural study by transmission electron microscopyFélix, Rocío / Volz, Kerstin / Gries, Katharina I. et al. | 2016
- 96
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Study of the nucleation and growth of InP nanowires on silicon with gold-indium catalystMavel, Amaury / Chauvin, Nicolas / Regreny, Philippe / Patriarche, Gilles / Masenelli, Bruno / Gendry, Michel et al. | 2016
- 103
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Preparation of a 1:1 cocrystal of genistein with 4,4′-bipyridineZhang, Yu-Nan / Yin, He-Mei / Zhang, Yu / Zhang, Da-Jun / Su, Xin / Kuang, Hai-Xue et al. | 2016
- 110
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The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic deviceJi, Lian / Tan, Ming / Ding, Chao / Honda, Kazuki / Harasawa, Ryo / Yasue, Yuya / Wu, Yuanyuan / Dai, Pan / Tackeuchi, Atsushi / Bian, Lifeng et al. | 2016
- 115
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Effects of cooling interval and MnO2, TiO2, CdO, NiO additions on spheluritic willemite crystalsCoşkun, Nihal Derin / Uz, Veli / Issi, Ali / Genç, Soner / Çakı, Münevver et al. | 2016
- 120
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Characterization of the loss of the dislocation-free growth during Czochralski silicon pullingLanterne, Adeline / Gaspar, Guilherme / Hu, Yu / Øvrelid, Eivind / Di Sabatino, Marisa et al. | 2016
- 129
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Some remarks on cooling curves as a principle tool for solidification characterizationGhomashchi, Reza / Nafisi, Shahrooz et al. | 2016
- 133
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Effect of growth promoters on chemistry synthesis of Cr3C2 nanowhiskers from water-soluble precursorsYang, Ruisong / Jin, Yongzhong / Zhang, Zhengquan / Liu, Dongliang et al. | 2016
- 140
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The effects of flow multiplicity on GaN deposition in a rotating disk CVD reactorGkinis, P.A. / Aviziotis, I.G. / Koronaki, E.D. / Gakis, G.P. / Boudouvis, A.G. et al. | 2016
- 149
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Unequal growth of twinned variants in boron-rich fivefold twinned nanowiresYu, Zhiyang / Jiang, Jun / Zhu, Jing et al. | 2016
- 154
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On the effect of thermodiffusion on solute segregation during the growth of semiconductor materials by the vertical Bridgman methodBen Sassi, Mokhtar / Kaddeche, Slim / Lappa, Marcello / Millet, Séverine / Henry, Daniel / Ben Hadid, Hamda et al. | 2016
- IFC
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Editorial Board| 2016