Back gate impact on SEU characterization of a Double SOI 4k-bit SRAM (English)
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In:
Microelectronics and Reliability
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138
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2022
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Back gate impact on SEU characterization of a Double SOI 4k-bit SRAM
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Contributors:
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Published in:
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Publication date:2022-08-02
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 138
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Research on ESD failure voltage model of the T-shaped wiring structure in GOA productsYang, Borui / Fu, Guicui / Wan, Bo / Rong, Keyi / Wang, Ye / Li, Xin / Tian, Pengcheng / Li, Jian et al. | 2022
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Ruthenium based RRAM for low variability switching and scaling for contemporary computing systemsSeal, Mainak / Deogaonkar, Anirudha / Senapati, Asim / Maikap, Siddheswar / Raghavan, Nagarajan et al. | 2022
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Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopantsWang, Yu-Yun / Wang, Kuan-Chi / Chang, Ting-Yu / Ronchi, Nicolò / O'Sullivan, Barry / Banerjee, Kaustuv / van den Bosch, Geert / Van Houdt, Jan / Wu, Tian-Li et al. | 2022
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Prediction of failure in time (FIT) of electrical connectors with short term testsSong, Jian / Shukla, Abhay / Probst, Roman et al. | 2022
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An investigation of angle effect on heavy ion induced single event effect in SiC MOSFETYan, X.Y. / He, Z. / Chen, Q.Y. / Hu, P.P. / Gao, S. / Zhao, S.W. / Cai, C. / Ye, B. / Zhao, P.X. / Sun, Y.M. et al. | 2022
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Multchip SiC-based compact module for automotive applications: A high speed thermal studyAnoldo, L. / Malta, G. / Mazza, B. / Piccione, G.G. / Calabretta, M. / Russo, S. / Russo, A. / Sitta, A. / Messina, A. / Lionetto, A. et al. | 2022
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Effects of the hardness and roughness on the plastic deformation properties of electroplated gold bumps during thermocompression bondingElsotohy, M. / Froehlich, J. / Dietrich, L. / Oppermann, H. / Schneider-Ramelow, M. et al. | 2022
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Effect of EVA discoloration in 25-year-old single crystalline silicon photovoltaic modules operated under moderate climateJeong, Jae-Seong et al. | 2022
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A comparative radiation analysis of reconfigurable memory technologies: FinFET versus bulk CMOSAzimi, S. / De Sio, C. / Portaluri, A. / Rizzieri, D. / Sterpone, L. et al. | 2022
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Application of N parallel-connected SiC MOSFETs to solid-state circuit breakers based on UIS testsLou, Zaiqi / Saito, Wataru / Nishizawa, Shin-ichi et al. | 2022
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Aging investigation of the latest standard dual power modules using improved interconnect technologies by power cycling testZhang, Yi / Wu, Rui / Iannuzzo, Francesco / Wang, Huai et al. | 2022
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Experimental study of total ionizing dose effect on SiC MOSFETs at temperature from −233 °C to 175 °CYu, Qingkui / Cao, Shuang / Lv, He / Sun, Yi / Mo, Rigen / Wang, Qianyuan / Mei, Bo / Zhang, Hongwei / Liu, Chaoming / Yu, Xuefeng et al. | 2022
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Experimental-numerical characterization of maximum current capability in Si-based surface mounted power devicesSitta, Alessandro / Mauromicale, Giuseppe / Corrente, Giovanni / Messina, Angelo Alberto / Rundo, Francesco / Calabretta, Michele / Sequenzia, Gaetano et al. | 2022
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Degradation mechanisms-based reliability modeling for metallized film capacitors under temperature and voltage stressesHu, Yifan / Ye, Xuerong / Zheng, Bokai / Zhao, Zichuan / Zhai, Guofu et al. | 2022
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An interpretable remaining useful life prediction scheme of lithium-ion battery considering capacity regenerationLyu, Guangzheng / Zhang, Heng / Zhang, YuJie / Miao, Qiang et al. | 2022
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Hybrid domain-based fast transient thermal evaluation method for power semiconductor modules in EV motor driveZhou, Yu / Jin, Yuting / Zhang, Yi / Luo, Haoze / Zhang, Jian / Li, Wuhua et al. | 2022
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Reliability estimation of complex systems based on a Wiener process with random effects and D-vine copulasZheng, Bokai / Chen, Cen / Zhang, Wei / Fu, Rao / Hu, Yifan / Lin, Yigang / Wang, Chunqing / Zhai, Guofu et al. | 2022
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Multiscale warpage behaviour in a Fan-Out Panel during thermal cyclesHölck, O. / Vernhes, P. / Gamba, B. / Cruz, R. / Huber, S. / Braun, T. / Schneider-Ramelow, M. et al. | 2022
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Effect of post bonding annealing on the reliability of Al based wire bondings in IGBTsKaranja, L. / Pichon, P. / Brandelero, J. / Legros, M. et al. | 2022
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Rapid three-dimensional reconstruction of printed circuit board using femtosecond laser delayering and digital microscopyChoi, Hongbin / May, Nicholas / Phoulady, Adrian / Suleiman, Yara / DiMase, Daniel / Shahbazmohamadi, Sina / Tavousi, Pouya et al. | 2022
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New measurement method to investigated service life of protection networks exposed to ESDRuffat, F. / Caignet, F. / Boyer, A. / Escudié, F. / Mejecaze, G. / Puybaret, F. et al. | 2022
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Embedded systems and printed circuit boards as weak spots in HV-H3TRB testsBrunko, A. / Meier, M.R. / Gloth, M. / Kaminski, N. et al. | 2022
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Self-propagating exothermic reaction assisted Cu clip bonding for effective high-power electronics packagingLiu, Canyu / Liu, Allan / Jiang, Han / Liang, Shuibao / Zhou, Zhaoxia / Liu, Changqing et al. | 2022
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A data-driven photovoltaic string current mismatch fault diagnosis method based on I-V curveZhang, Zhixiang / Ma, Mingyao / Ma, Wenting / Zhang, Rui / Wang, Jun et al. | 2022
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AC stress analysis of trench-based multi-gate transistors in a 40 nm e-NVM technologyGay, R. / Marca, V. Della / Aziza, H. / Chiquet, P. / Regnier, A. / Niel, S. / Marzaki, A. et al. | 2022
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An event-oriented reliability assessment for DC link capacitors in grid connected inverter with low voltage ride through operationLiu, Yi / Zhu, Mingshuo / Huang, Meng / Zha, Xiaoming et al. | 2022
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A thermal network model for monitoring IGBT chip solder degradation based on feedback PI controlZhang, Xiaotong / Mu, Wei / Lv, Chunlin / Shi, Miao / Yu, Xiaoling / Wu, Kangning / Li, Jianying et al. | 2022
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Expedient validation of LED reliability with anomaly detection through multi-output Gaussian process regressionLim, Sze Li Harry / Duong, Pham Luu Trung / Park, Hyunseok / Raghavan, Nagarajan et al. | 2022
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A combined modelling approach to design test structures to study thermomigration in Cu interconnectsDing, Y. / Lofrano, M. / Varela Pedreira, O. / Zahedmanesh, H. / Croes, K. / De Wolf, I. et al. | 2022
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Analysis of copper pillar bump interconnects for RF-filtersEulenkamp, C. / Schober, J. / Feiertag, G. et al. | 2022
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Coupling simulation and accelerated degradation model for reliability estimation: Application to a voltage regulatorAl Rashid, Jaber / Saintis, Laurent / Koohestani, Mohsen / Barreau, Mihaela et al. | 2022
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Online monitoring and correction method of threshold voltage in SiC MOSFET power cycling testWu, Qiang / Kang, Jianlong / Chen, Yu / Zheng, Fujun / Zhang, Jian / Luo, Haoze / Li, Wuhua / Iannuzzo, Francesco et al. | 2022
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FEM simulations applied to the failure analysis of 3D printable finned liquid cold plates for high-power press-pack applicationsSpaggiari, D. / Delmonte, N. / Portesine, F. / Sacchi, E. / Aschero, M. / Cova, P. et al. | 2022
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Multistate time lag dynamic Bayesian networks model for reliability prediction of smart metersLiu, Kaixin / Qi, Jia / Zhou, Zhen / Sun, Yongquan / Guo, Kangkang et al. | 2022
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Microstructural evolution during the crack propagation at the bond-wire contact area of IGBT power modules upon power cyclingShqair, Mustafa / Khatir, Zoubir / Ibrahim, Ali / Halouani, Ayda / Berkani, Mounira et al. | 2022
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Squeeze-out and bond strength of patterned CuSn SLID seal-framesPapatzacos, P.H. / Nguyen, H.-V. / Roy, A. / Hoivik, N. / Broaddus, P. / Ohlckers, P. et al. | 2022
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Study of short-circuit robustness of p-GaN and cascode transistorsLandel, M. / Gautier, C. / Lefebvre, S. et al. | 2022
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Effect of electroless Cu depositions for micro-via structure and thermal cycling reliabilityZhang, Zheng / Hsieh, Ming-Chun / Liu, Ran / Yeom, Jeyun / Suetake, Aiji / Yoshida, Hiroshi / Chen, Chuantong / Kang, Joonhaeng / Honma, Hidekazu / Kitahara, Yuhei et al. | 2022
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Soft-switching inverter investigation for three-phase IM drive as wind turbine emulator designMoussa, Intissar / Khedher, Adel et al. | 2022
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Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTsChiocchetta, F. / De Santi, C. / Rampazzo, F. / Mukherjee, K. / Grünenpütt, Jan / Sommer, Daniel / Blanck, Hervé / Lambert, Benoit / Gerosa, A. / Meneghesso, G. et al. | 2022
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Effects of proton and electron irradiations on the dielectric properties of epoxy/anhydride cured productsZhang, D. / Xing, A. / Li, B. / Gao, J. / Jiao, J. / Wang, K. / Zhang, W. / Wang, L. / Sun, P. / Zhou, J. et al. | 2022
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Study of migration and coalescence of voids driven by electric current stressing in solder interconnects using phase field simulationLiang, S. / Zhou, M.B. / Ke, C.B. / Wei, C. / Zhang, X.P. et al. | 2022
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Comparison between Cu(In,Ga)Se2 solar cells with different back contacts submitted to current stressBertoncello, M. / Barbato, M. / Caria, A. / Buffolo, M. / De Santi, C. / Rampino, S. / Pattini, F. / Spaggiari, G. / Trivellin, N. / Vogrig, D. et al. | 2022
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The impact of mission profile on system level reliability of cascaded H-bridge multilevel PV inverterGatla, Ranjith Kumar / Zhu, Guorong / Lu, Jianghua / Kshatri, Sainadh Singh / Devineni, Gireesh Kumar et al. | 2022
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Mission profile simplification method for reliability analysis of PV convertersFogsgaard, Martin Bendix / Bahman, Amir Sajjad / Iannuzzo, Francesco / Blaabjerg, Frede et al. | 2022
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Investigation of stress relaxation in SAC305 with micro-Raman spectroscopyLiu, E / Bhogaraju, Sri Krishna / Wunderle, Bernhard / Elger, Gordon et al. | 2022
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FEM-based analysis of avalanche ruggedness of high voltage SiC Merged-PiN-Schottky and Junction-Barrier-Schottky diodesShen, Chengjun / Yu, Renze / Jahdi, Saeed / Mellor, Phil / Munagala, Sai Priya / Hopkins, Andrew / Simpson, Nick / Ortiz-Gonzalez, Jose / Alatise, Olayiwola et al. | 2022
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On the injected charge distribution and discharge currents in the dielectric films for MEMS capacitive switchesPapaioannou, G. et al. | 2022
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Performance analysis of coloured BIPV systems depending on reliability of irradiance dataJeong, Sookyung / Jang, Juhee / Park, Indoo / Jo, Sun keun / Lim, Jungtek / Lee, Sangsoo / Lee, Hae-seok / Oh, Wonwook et al. | 2022
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A fast decomposition algorithm of positive and negative sequence components with sampling noise optimizationMa, Mingyao / Liang, Jiacheng / Xiang, Nianwen / Wang, Hanyu / Wu, Jijun et al. | 2022
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Characterization of the carriers' multiplication in Si and SiC power devices by soft-gamma irradiation under cryostatic conditionsPocaterra, M. / Ciappa, M. et al. | 2022
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Reliability assessment of miniaturised electromechanical RF relays for space applicationsMarozau, I. / Unterhofer, S. / Berry, M. / Aubry, G. / Gonin, P. / Enquebecq, R. / Dadras, M. / Sereda, O. et al. | 2022
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Editorial Board| 2022
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Experimental research on performance degradation of TSV microstructure under thermal cycling, vibration and electrical stressFan, Zhengwei / Chen, Xun / Wang, Yashun / Jiang, Yu / Zhang, Shufeng et al. | 2022
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Effect of thermal loading definitions on the mission profile-based reliability evaluation of power devices in PV invertersRyu, Taerim / Choi, Ui-Min / Vernica, Ionut / Blaabjerg, Frede et al. | 2022
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Correlative multimodal imaging and targeted lasering for automated high-precision IC decapsulationMay, Nicholas / Choi, Hongbin / Phoulady, Adrian / Suleiman, Yara / DiMase, Daniel / Tavousi, Pouya / Shahbazmohamadi, Sina et al. | 2022
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High complexity reliable space applications in commercial microprocessorsAviles, Pablo M. / Schäfer, Laura / Lindoso, Almudena / Belloch, Jose A. / Entrena, Luis et al. | 2022
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Single-event burnout of LDMOS with polygon P+ structureWang, Shiping / Cai, Xiaowu / Li, Xiaojing / Li, Duoli / Zeng, Chuanbin / Jin, Meichen / Wang, Jiajia / Li, Jiangjiang / Zhao, Fazhan / Li, Bo et al. | 2022
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Optimized selection of materials for IGBT module packagingAlavi, O. / De Ceuninck, W. / Daenen, M. et al. | 2022
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Robust resistive switching characteristics of AlOx CBRAM using simple and cost-effective thermal evaporation processDeogaonkar, Anirudha / Seal, Mainak / Senapati, Asim / Ginnaram, Sreekanth / Ranjan, Alok / Maikap, Siddheswar / Raghavan, Nagarajan et al. | 2022
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Dynamic high temperature operating life test methodology for long-term switching reliability of GaN power devicesTayyab, Muhammad Farhan / Silvestri, Marco / Bernardoni, Mirko / Basler, Thomas / Curatola, Gilberto et al. | 2022
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Condition monitoring indicators for Si and SiC power modulesDi Nuzzo, G. / Tuellmann, M. / Methfessel, T. / Rzepka, S. et al. | 2022
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Improved failure analysis in scanning acoustic microscopy via advanced signal processing techniquesWolf, M. / Sukumaran Nair, A. / Hoffrogge, P. / Kühnicke, E. / Czurratis, P. et al. | 2022
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Experimental investigation of PCB embedded 1200 V IGBT/diode power pre-package under high-humidity high-temperature reverse voltage biasHuesgen, T. / Sharma, A.B. / Rawal, K.B. / Polezhaev, V. / Stohrer, G. / Koch, F. / Vaas, M. et al. | 2022
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A data-driven method for anomaly detection and aging model parameter estimation of capacitors based on condition monitoringLv, Chunlin / Liu, Jinjun / Zhang, Yan et al. | 2022
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Cleavage anisotropy of boron doped cracks in crystalline siliconLiu, B. / Zhang, Y.A. / Li, Y.J. / Wang, X.F. / Yue, Y.J. et al. | 2022
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Hot-carrier reliability and performance study of transistors with variable gate-to-drain/source overlapDevoge, P. / Aziza, H. / Lorenzini, P. / Masson, P. / Julien, F. / Marzaki, A. / Malherbe, A. / Delalleau, J. / Cabout, T. / Regnier, A. et al. | 2022
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Editorial (ESREF 2022 Special issue)| 2022
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A temperature-insensitive process corner detection circuit based on self-timing ring oscillatorYang, Lixin / Li, Dejian / Yang, Xiaokun / Feng, Xi / Tan, Lang / Shen, Chongfei / Cai, Hao et al. | 2022
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Finite elements analyses of early-stage crack propagation in aluminum wire bonds due to power cyclingHalouani, A. / Shqair, M. / Khatir, Z. / Ibrahim, A. / Ouhab, M. et al. | 2022
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Defect formation and mitigation in Cu/Cu joints formed through transient liquid phase bonding with Cu-Sn nanocomposite interlayerJiang, H. / Robertson, S. / Liang, S. / Zhou, Z. / Zhao, L. / Liu, C. et al. | 2022
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Evaluation of the impact of defects on threshold voltage drift employing SiO2 pMOS transistorsTselios, Konstantinos / Michl, Jakob / Knobloch, Theresia / Enichlmair, Hubert / Ioannidis, Eleftherios G. / Minixhofer, Rainer / Grasser, Tibor / Waltl, Michael et al. | 2022
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Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTsModolo, N. / Fregolent, M. / Masin, F. / Benato, A. / Bettini, A. / Buffolo, M. / De Santi, C. / Borga, M. / Posthuma, N. / Bakeroot, B. et al. | 2022
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Unclamped inductive stressing of GaN and SiC Cascode power devices to failure at elevated temperaturesGunaydin, Yasin / Jahdi, Saeed / Yuan, Xibo / Yu, Renze / Shen, Chengjun / Munagala, Sai Priya / Hopkins, Andrew / Simpson, Nick / Hosseinzadehlish, Mana / Ortiz-Gonzalez, Jose et al. | 2022
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Failure analysis of fabrication process in hermetic wafer-level packaging for microbolometer focal plane arraysXia, H. / Roy, A. / Nguyen, H.-V. / Ramic, Z. / Aasmundtveit, K.E. / Ohlckers, P. et al. | 2022
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Simulation of Cu pad expansion in wafer-to-wafer Cu/SiCN hybrid bondingTsau, Yan Wen / De Messemaeker, Joke / Salahouelhadj, Abdellah / Gonzalez, Mario / Witters, Liesbeth / Zhang, Boyao / Seefeldt, Marc / Beyne, Eric / De Wolf, Ingrid et al. | 2022
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Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETsMasin, F. / De Santi, C. / Lettens, J. / Geenen, F. / Meneghesso, G. / Zanoni, E. / Moens, P. / Meneghini, M. et al. | 2022
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PV module life prediction based on coupled failure modelMa, Mingyao / Ma, Jianye / Wang, Hanyu / Ma, Wenting / Zhang, Rui et al. | 2022
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Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDsFregolent, M. / Boito, M. / Marcuzzi, A. / De Santi, C. / Chiocchetta, F. / Treidel, E. Bahat / Wolf, M. / Brunner, F. / Hilt, O. / Würfl, J. et al. | 2022
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RF signals over field emission currents: A theoretical study for MEMS capacitive switchesMichalas, Loukas / Konstantinidis, George / Papaioannou, George et al. | 2022
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Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitationNicoletto, Marco / Caria, Alessandro / De Santi, Carlo / Buffolo, Matteo / Huang, Xuanqi / Fu, Houqiang / Chen, Hong / Zhao, Yuji / Meneghesso, Gaudenzio / Zanoni, Enrico et al. | 2022
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Warpage measurements to support the development of mmWave modulesAlbrecht, Oliver / Meier, Karsten / Schaulin, Michael / Toussaint, Pierre-Louis / Gamba, Baptiste / Cruz, Rodolfo / Vernhes, Pierre / Götze, Christian / Bock, Karlheinz et al. | 2022
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Analysis of impact ionization on RF power LDMOS reliability under RF life test in radar systemBelaïd, M.A. et al. | 2022
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Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitorsFavero, D. / De Santi, C. / Mukherjee, K. / Borga, M. / Geens, K. / Chatterjee, U. / Bakeroot, B. / Decoutere, S. / Rampazzo, F. / Meneghesso, G. et al. | 2022
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Reliability-centered prediction methods of clock battery low-output-voltage event for smart electricity metersDai, Y.J. / Jing, Z. / Sun, Y.Q. et al. | 2022
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Impact of dielectric film thickness on field emission in MEMS capacitive switchesTheocharis, J. / Gardelis, S. / Papaioannou, G. et al. | 2022
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Investigation of thermal effect on solidification in Sn/Cu interconnects during self-propagating exothermic reaction bondingLiang, Shuibao / Zhong, Yi / Robertson, Stuart / Liu, Allan / Jiang, Han / Liu, Canyu / Zhou, Zhaoxia / Liu, Changqing et al. | 2022
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Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stressRoccato, Nicola / Piva, Francesco / De Santi, Carlo / Buffolo, Matteo / Haller, Camille / Carlin, Jean-François / Grandjean, Nicolas / Vallone, Marco / Tibaldi, Alberto / Bertazzi, Francesco et al. | 2022
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Investigating the reliability impacts of neutron-induced soft errors in aerial image classification CNNs implemented in a softcore SRAM-based FPGA GPUBenevenuti, Fabio / Gonçalves, Marcio M. / Pereira, Evaldo Carlos F. Jr / Vaz, Rafael G. / Gonçalez, Odair L. / Bastos, Rodrigo Possamai / Letiche, Manon / Kastensmidt, Fernanda L. / Azambuja, José Rodrigo et al. | 2022
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Condition monitoring of power module using S-parameters, TDR, and TDTPascal, Y. / Daschner, F. / Liserre, M. / Höft, M. et al. | 2022
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Hydrogen sulphide (H2S) single gas testing on power semiconductor modules under high voltageHanf, M. / Peters, J.-H. / Clausner, S. / Kaminski, N. et al. | 2022
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Novel stress analysis method on board-level during drop tests for electrical componentsHuotari, J. / Inkeri, T. et al. | 2022
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Power cycling tests under driving ΔTj = 125 °C on the Cu clip bonded EV power moduleKim, Dongjin / Lee, Byeongsoo / Lee, Tae-Ik / Noh, Seungjun / Choe, Chanyang / Park, Semin / Kim, Min-Su et al. | 2022
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Design of RC trigger circuit for dynamically activated ESD protections ensuring application requirements and ESD performancesMerlo, L. / Di Biccari, L. / Cerati, L. / Andreini, A. et al. | 2022
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Fabrication of polymeric vacuum-sealed cavities on a silicon waferChowdhury, S. et al. | 2022
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Self-heating temperature measurement in AlInN/GaN HEMTs by using CeO2 and TiO2 micro-Raman thermometersStrenaer, R. / Guhel, Y. / Brocero, G. / Gaquière, C. / Boudart, B. et al. | 2022
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Predictive gate ageing-laws of SiC MOSFET under repetitive short-circuit stressRichardeau, F. / Barazi, Y. et al. | 2022
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Multi-domain system level modeling approach for assessment of degradation behaviour under thermal and thermo-mechanical stressDobs, T. / Elsotohy, M. / Jaeschke, J. / Sehr, F. / Strogies, J. / Wilke, K. et al. | 2022
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Life prediction of power devices of VIENNA rectifier considering the effects of aging and dust accumulationLiu, Hongpeng / An, Chunguang / Zhang, Wei / Dou, Zhenlan / Tong, Xianliang et al. | 2022
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Back gate impact on SEU characterization of a Double SOI 4k-bit SRAMGao, J. / Huang, Y. / Wang, Y. / Wang, K. / Wang, C. / Li, B. / Liu, F. / Li, J. / Zhang, G. / Zhang, D. et al. | 2022
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Package-level Joule-heating measurements for multilevel interconnectsJose, S. et al. | 2022
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A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applicationsDouzi, Chawki / Kadi, Moncef / Dherbecourt, Pascal / Besserour, Mohamed Akram / Joubert, Eric / Fouquet, François et al. | 2022
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1T-NOR Flash memory after endurance degradation: An advanced TCAD simulationMatteo, F. / Simola, R. / Postel-Pellerin, J. / Coulié, K. et al. | 2022
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The influence of thermal cycling test parameters on the failure rate of electrical connectorsKrüger, K. / Song, J. et al. | 2022
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Impact of negative bias temperature instability on p-channel power VDMOSFET used in practical applicationsMitrović, N. / Veljković, S. / Davidović, V. / Djorić-Veljković, S. / Golubović, S. / Živanović, E. / Prijić, Z. / Danković, D. et al. | 2022
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Experimental analysis on stochastic behavior of preswitching time in STT-MRAMYazigy, N. / Postel-Pellerin, J. / Marca, V. Della / Terziyan, K. / Nadifi, S. / Sousa, R.C. / Canet, P. / Di Pendina, G. et al. | 2022
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Investigation on the junction temperature of planar power 4H-SiC MOSFET under short circuit operationNguyen, Tien Anh / Lefebvre, Stéphane / Azzopardi, Stéphane / Chaplier, Gérard et al. | 2022
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A novel nanoprobing analysis flow by using multi-probe configuration to localize silicide defect in MOSFETZheng, Shijun / Yang, Jianli / Tian, Li / Che, Yi / Zhai, Lin et al. | 2022
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Development of a high accuracy and stability test bench for ageing measurement of 16 nm FinFETs based FPGASobas, J. / Airimitoaie, T.-B. / Marc, F. et al. | 2022
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Impact of a defect trapping layer on the reliability of 1.3 μm quantum dot laser diodes grown on siliconZenari, M. / Buffolo, M. / De Santi, C. / Shang, C. / Hughes, E. / Wan, Y. / Herrick, R.W. / Meneghesso, G. / Zanoni, E. / Bowers, J. et al. | 2022
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Benchmarking the robustness of Si and SiC MOSFETs: Unclamped inductive switching and short-circuit performanceOrtiz Gonzalez, J. / Deb, A. / Bashar, E. / Agbo, S.N. / Jahdi, S. / Alatise, O. et al. | 2022
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A unified model for TCAD simulation of the charge generated in semiconductors by low-energy alpha particles and protonsPocaterra, M. / Ciappa, M. / Pfaeffli, P. et al. | 2022
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PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transientsAndjelkovic, Marko / Marjanovic, Milos / Chen, Junchao / Ilic, Stefan / Ristic, Goran / Krstic, Milos et al. | 2022
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