Preparation and gas-sensing properties of NiFe2O4 semiconductor materials (English)
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In:
Solid-State Electronics
;
49
, 6
;
1029-1033
;
2005
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Preparation and gas-sensing properties of NiFe2O4 semiconductor materials
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Contributors:Yang, Liufang ( author ) / Xie, Yongan ( author ) / Zhao, Heyun ( author ) / Wu, Xinghui ( author ) / Wang, Yude ( author )
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Published in:Solid-State Electronics ; 49, 6 ; 1029-1033
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Publisher:
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Publication date:2005-03-23
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 49, Issue 6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 865
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Hooge noise parameter of epitaxial n-GaN on sapphireTanuma, Nobuhisa / Tacano, Munecazu / Pavelka, Jan / Hashiguchi, Sumihisa / Sikula, Josef / Matsui, Toshiaki et al. | 2005
- 871
-
A circuit model simulation for separate absorption, grading, charge, and multiplication avalanche photodiodesBanoushi, A. / Kardan, M.R. / Ataee Naeini, M. et al. | 2005
- 878
-
The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodesLeroy, W.P. / Opsomer, K. / Forment, S. / Van Meirhaeghe, R.L. et al. | 2005
- 884
-
Temperature and field dependent mobility in pentacene-based thin film transistorsZhu, Mo / Liang, Guirong / Cui, Tianhong / Varahramyan, Kody et al. | 2005
- 889
-
An electron mobility model for wurtzite GaNSchwierz, Frank et al. | 2005
- 896
-
Characteristics of 4H#8211SiC MOS interface annealed in N2OFujihira, Keiko et al. | 2005
- 896
-
Characteristics of 4H–SiC MOS interface annealed in N2OFujihira, Keiko / Tarui, Yoichiro / Imaizumi, Masayuki / Ohtsuka, Ken-ichi / Takami, Tetsuya / Shiramizu, Tatsuya / Kawase, Kazumasa / Tanimura, Jyunji / Ozeki, Tatsuo et al. | 2004
- 902
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Electrical properties of spray pyrolytic tin sulfide filmsKoteeswara Reddy, N. / Ramakrishna Reddy, K.T. et al. | 2005
- 907
-
Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectricsHaartman, M. von / Westlinder, J. / Wu, D. / Malm, B.G. / Hellström, P.-E. / Olsson, J. / Östling, M. et al. | 2005
- 915
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Experimental investigation of the kink effect and the low frequency noise properties in pseudomorphic HEMT’sPrincipato, F. / Caddemi, A. / Ferrante, G. et al. | 2005
- 915
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Experimental investigation of the kink effect and the low frequency noise properties in pseudomorphic HEMT#8217sPrincipato, F. et al. | 2005
- 923
-
Electron direct tunneling time in heterostructures with nanometer-thick trapezoidal barriersKhairurrijal / Noor, Fatimah A. / Sukirno et al. | 2005
- 928
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On the soft breakdown phenomenon in AlGaAs/InGaAs HEMT: An experimental study down to cryogenic temperatureCaddemi, A. / Crupi, G. / Donato, N. et al. | 2005
- 935
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Two relaxation mechanisms in (Sr1−1.5xBix)TiO3 (x:0.0067)Şentürk, E. et al. | 2005
- 935
-
Two relaxation mechanisms in (Sr1#87221.5x Bi x )TiO3 (x:0.0067)| 2005
- 940
-
Normal distribution of confinement energy from a photoluminescence line shape analysis in oxidized porous siliconChen, Songyan / Huang, Yanhua / Cai, Beini et al. | 2005
- 945
-
Design and optimization of junction termination extension (JTE) for 4H–SiC high voltage Schottky diodesMahajan, Atul / Skromme, B.J. et al. | 2005
- 945
-
Design and optimization of junction termination extension (JTE) for 4H#8211SiC high voltage Schottky diodesMahajan, Atul et al. | 2005
- 956
-
Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistorManeux, C. / Belhaj, M. / Grandchamp, B. / Labat, N. / Touboul, A. et al. | 2005
- 965
-
A numerical study of scaling issues for trench power MOSFETsRoig, J. / Cortés, I. / Jiménez, D. / Flores, D. / Iñiguez, B. / Hidalgo, S. / Rebollo, J. et al. | 2005
- 976
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Modeling MOSFET surface capacitance behavior under non-equilibriumKapoor, Abhishek / Jindal, R.P. et al. | 2005
- 981
-
High performance InP/InGaAs/InP DHBTs with patterned sub-collector fabricated by elevated temperature N+ implantChen, Mary / Sokolich, Marko / Chow, David / Shi, Bin / Rajavel, Rajesh / Bui, Steven / Royter, Yakov / Thomas, Steve III / Fields, Charles et al. | 2005
- 986
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The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technologyHaugerud, Becca M. / Nayeem, Mustayeen B. / Krithivasan, Ramkumar / Lu, Yuan / Zhu, Chendong / Cressler, John D. / Belford, Rona E. / Joseph, Alvin J. et al. | 2005
- 991
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Tunnelling enhanced recombination in polycrystalline CdS/CdTe and CdS/Cu(In,Ga)Se2 heterojunction solar cellsBayhan, Habibe / Kavasoğlu, A. Sertap et al. | 2005
- 997
-
Body factor conscious modeling of single gate fully depleted SOI MOSFETs for low power applicationsKumar, Anil / Nagumo, Toshiharu / Tsutsui, Gen / Ohtou, Tetsu / Hiramoto, Toshiro et al. | 2005
- 1002
-
A TCAD methodology for high-speed photodetectorsJacob, Biju / Witzigmann, Bernd / Klemenc, Michaela / Petit, Christophe et al. | 2005
- 1009
-
Accurate modeling and parameter extraction method for organic TFTsEstrada, M. / Cerdeira, A. / Puigdollers, J. / Reséndiz, L. / Pallares, J. / Marsal, L.F. / Voz, C. / Iñiguez, B. et al. | 2005
- 1017
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Electron transport modeling in the inversion layers of 4H and 6H–SiC MOSFETs on implanted regionsZeng, Yu Anne / White, Marvin H. / Das, Mrinal K. et al. | 2005
- 1017
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Electron transport modeling in the inversion layers of 4H and 6H#8211SiC MOSFETs on implanted regionsZeng, Yu Anne et al. | 2005
- 1029
-
Preparation and gas-sensing properties of NiFe2O4 semiconductor materialsYang, Liufang / Xie, Yongan / Zhao, Heyun / Wu, Xinghui / Wang, Yude et al. | 2005
- 1034
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Parameter sensitivity for optimal design of 65nm node double gate SOI transistorsLim, Tao Chuan / Alastair Armstrong, G. et al. | 2005
- 1044
-
Electrical properties of [100]-oriented CVD diamond filmSu, Qingfeng / Lu, Jinfang / Wang, Linjun / Liu, Jianmin / Ruan, Jianfeng / Cui, Jiangtao / Shi, Weimin / Xia, Yiben et al. | 2005
- 1049
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Identical resonant features of THz photoconductivity and plasmon absorption in a grid-gated double-quantum well FETPopov, V.V. / Teperik, T.V. / Zayko, Yu.N. / Allen, S.J. / Horing, N.J.M. et al. | 2005
- 1052
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Temperature dependence of barrier heights of Au/n-type GaAs Schottky diodesKarataş, Ş. / Altındal, Ş. et al. | 2005