Switching limits of top-gated carbon nanotube field-effect transistors (English)
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https://orcid.org/0000-0001-9522-0441
- New search for: Gilardi, C.
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In:
Solid-State Electronics
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202
;
2023
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Switching limits of top-gated carbon nanotube field-effect transistors
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Contributors:Sanchez-Soares, A. ( author ) / Gilardi, C. ( author ) / Lin, Q. ( author ) / Kelly, T. ( author ) / Su, S.-K. ( author ) / Fagas, G. ( author ) / Greer, J.C. ( author ) / Pitner, G. ( author ) / Chen, E. ( author )
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Published in:Solid-State Electronics ; 202
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Publisher:
- New search for: Elsevier Ltd
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Publication date:2023-02-13
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 202
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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A physics-based TCAD framework for NBTITiwari, Ravi / Duan, Meng / Bajaj, Mohit / Dolgos, Denis / Smith, Lee / Wong, Hiu Yung / Mahapatra, Souvik et al. | 2022
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Quantum element method for multi-dimensional nanostructures enabled by a projection-based learning algorithmVeresko, Martin / Cheng, Ming-Cheng et al. | 2023
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PMOS junction optimization for 3D NAND FLASH memory with CMOS under arrayLiao, Jeng-Hwa / Ko, Zong-Jie / Lin, Hsing-Ju / Hsieh, Jung-Yu / Yang, Ling-Wu / Yang, Tahone / Chen, Kuang-Chao / Lu, Chih-Yuan et al. | 2023
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An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETsHan, Hung-Chi / Jazaeri, Farzan / Zhao, Zhixing / Lehmann, Steffen / Enz, Christian et al. | 2023
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Switching limits of top-gated carbon nanotube field-effect transistorsSanchez-Soares, A. / Gilardi, C. / Lin, Q. / Kelly, T. / Su, S.-K. / Fagas, G. / Greer, J.C. / Pitner, G. / Chen, E. et al. | 2023
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Editorial Board| 2023
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Design of auto-store circuit for nvSRAM with SONOS access transistorKo, Woonsan / Sung, Jaeyoung / Jeong, Junkyo / Ahn, Jaehyuk / Lee, Hideok / Lee, Gawon et al. | 2023
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Impact of thermal coupling effects on the digital and analog figures of merit of UTBB SOI MOSFET pairsVanbrabant, Martin / Raskin, Jean-Pierre / Flandre, Denis / Kilchytska, Valeriya et al. | 2023
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Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysisde Lima Silva, Wenita / do Nascimento Tolêdo, Rodrigo / Gonçalez Filho, Walter / de Moraes Nogueira, Alexandro / Ghedini Der Agopian, Paula / Antonio Martino, Joao et al. | 2023
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Improved RF power performance of AlGaN/GaN HEMT on silicon with planar distributed channelChen, Jingxiong / Qin, Jian / Ma, Xiao / Wang, Hong et al. | 2023
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Improved ISPP scheme for narrow threshold voltage distribution in 3-D NAND flash memoryYang, Giho / Park, Chanyang / Nam, Kihoon / Kim, Donghyun / Park, Min Sang / Baek, Rock-Hyun et al. | 2023