High-k dielectrics for future generation memory devices (Invited Paper) (English)
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In:
Microelectronic Engineering
;
86
, 7-9
;
1789-1795
;
2009
-
ISSN:
- Article (Journal) / Electronic Resource
-
Title:High-k dielectrics for future generation memory devices (Invited Paper)
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Contributors:Kittl, J.A. ( author ) / Opsomer, K. ( author ) / Popovici, M. ( author ) / Menou, N. ( author ) / Kaczer, B. ( author ) / Wang, X.P. ( author ) / Adelmann, C. ( author ) / Pawlak, M.A. ( author ) / Tomida, K. ( author ) / Rothschild, A. ( author )
-
Published in:Microelectronic Engineering ; 86, 7-9 ; 1789-1795
-
Publisher:
- New search for: Elsevier B.V.
-
Publication date:2009-03-05
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Size:7 pages
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ISSN:
-
DOI:
-
Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 86, Issue 7-9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1519
-
PrefaceRobertson, John / Hall, Steve et al. | 2009
- 1520
-
Roadmap for 22nm and beyond (Invited Paper)Iwai, H. et al. | 2009
- 1520
-
Roadmap for 22 nm and beyondIwai, H. et al. | 2009
- 1529
-
Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper)Caymax, Matty / Brammertz, Guy / Delabie, Annelies / Sioncke, Sonja / Lin, Dennis / Scarrozza, Marco / Pourtois, Geoffrey / Wang, Wei-E / Meuris, Marc / Heyns, Marc et al. | 2009
- 1536
-
Interface studies of ALD-grown metal oxide insulators on Ge and III–V semiconductors (Invited Paper)McIntyre, Paul C. / Oshima, Yasuhiro / Kim, Eunji / Saraswat, Krishna C. et al. | 2009
- 1540
-
Challenges of integration of high-κ dielectric with III–V materials (Invited Paper)Tsai, W. / Goel, N. / Koveshnikov, S. / Majhi, P. / Wang, W. et al. | 2009
- 1540
-
Challenges of integration of high-k dielectric with III-V materials (Invited Paper)Tsai, W. / Goel, N. / Koveshnikov, S. / Majhi, P. / Wang, W. et al. | 2009
- 1544
-
Surface passivation and implications on high mobility channel performance (Invited Paper)Hinkle, C.L. / Milojevic, M. / Vogel, E.M. / Wallace, R.M. et al. | 2009
- 1550
-
Band offsets at interfaces of (100)InxGa1−xAs (0x0.53) with Al2O3 and HfO2Afanas’ev, V.V. / Stesmans, A. / Brammertz, G. / Delabie, A. / Sionke, S. / O’Mahony, A. / Povey, I.M. / Pemble, M.E. / O’Connor, E. / Hurley, P.K. et al. | 2009
- 1550
-
Band offsets at interfaces of (100)InxGa1-xAs (0 less-than, equal or similar x less-than, equal or similar 0.53) with Al2O3 and HfO2Afanasev, V.V. / Stesmans, A. / Brammertz, G. / Delabie, A. / Sionke, S. / O'Mahony, A. / Povey, I.M. / Pemble, M.E. / O'Connor, E. / Hurley, P.K. et al. | 2009
- 1554
-
Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulatorLin, Han-Chung / Wang, Wei-E. / Brammertz, Guy / Meuris, Marc / Heyns, Marc et al. | 2009
- 1558
-
Interface states model for III–V oxide interfacesRobertson, J. et al. | 2009
- 1561
-
Deposition of HfO2 on InAs by atomic-layer depositionWheeler, D. / Wernersson, L.-E. / Fröberg, L. / Thelander, C. / Mikkelsen, A. / Weststrate, K.-J. / Sonnet, A. / Vogel, E.M. / Seabaugh, A. et al. | 2009
- 1564
-
Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETsAyubi-Moak, J. / Benbakhti, B. / Kalna, K. / Paterson, G.W. / Hill, R. / Passlack, M. / Thayne, I. / Asenov, A. et al. | 2009
- 1568
-
A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devicesLongo, P. / Paterson, G.W. / Holland, M.C. / Thayne, I.G. / Craven, A.J. et al. | 2009
- 1571
-
Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)Toriumi, Akira / Tabata, Toshiyuki / Hyun Lee, Choong / Nishimura, Tomonori / Kita, Koji / Nagashio, Kosuke et al. | 2009
- 1577
-
Germanium surface and interfaces (Invited Paper)Dimoulas, A. / Tsipas, P. et al. | 2009
- 1577
-
Germanium surface and interfacesDimoulas, A. / Tsipas, P. et al. | 2009
- 1582
-
Improvement in NBTI reliability of Si-passivated Ge/high-k/metal-gate pFETsKaczer, B. / Franco, J. / Mitard, J. / Roussel, Ph. J. / Veloso, A. / Groeseneken, G. et al. | 2009
- 1585
-
Improved GeOI substrates for pMOSFET off-state leakage controlRomanjek, K. / Augendre, E. / Van Den Daele, W. / Grandchamp, B. / Sanchez, L. / Le Royer, C. / Hartmann, J.-M. / Ghyselen, B. / Guiot, E. / Bourdelle, K. et al. | 2009
- 1589
-
Atomistic model structure of the Ge(100)–GeO2 interfaceBroqvist, Peter / Binder, Jan Felix / Pasquarello, Alfredo et al. | 2009
- 1592
-
Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOSMerckling, C. / Penaud, J. / Kohen, D. / Bellenger, F. / Alian, A. / Brammertz, G. / El-Kazzi, M. / Houssa, M. / Dekoster, J. / Caymax, M. et al. | 2009
- 1596
-
A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectricLi, C.X. / Wang, C.D. / Leung, C.H. / Lai, P.T. / Xu, J.P. et al. | 2009
- 1599
-
Inhomogeneous Ni/Ge Schottky barriers due to variation in Fermi-level pinningLi, X.V. / Husain, M.K. / Kiziroglou, M. / de Groot, C.H. et al. | 2009
- 1603
-
Scaling the MOSFET gate dielectric: from high-k to higher-k?Frank, M.M. / Kim, SangBum / Brown, S.L. / Bruley, J. / Copel, M. / Hopstaken, M. / Chudzik, M. / Narayanan, V. et al. | 2009
- 1603
-
Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)Frank, Martin M. / Kim, SangBum / Brown, Stephen L. / Bruley, John / Copel, Matthew / Hopstaken, Marco / Chudzik, Michael / Narayanan, Vijay et al. | 2009
- 1609
-
Performance and reliability of advanced High-K/Metal gate stacks (Invited Paper)Garros, X. / Casse, M. / Reimbold, G. / Rafik, M. / Martin, F. / Andrieu, F. / Cosnier, V. / Boulanger, F. et al. | 2009
- 1615
-
Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper)Schroeder, T. / Giussani, A. / Muessig, H.-J. / Weidner, G. / Costina, I. / Wenger, Ch. / Lukosius, M. / Storck, P. / Zaumseil, P. et al. | 2009
- 1621
-
Paramagnetic Ge dangling bond type defects at (100)Si1−xGex/SiO2 interfaces (Invited Paper)Stesmans, A. / Somers, P. / Afanas’ev, V.V. et al. | 2009
- 1621
-
Paramagnetic Ge dangling bond type defects at (100)Si1-xGex/SiO2 interfacesStesmans, A. / Somers, P. / Afanasev, V.V. et al. | 2009
- 1626
-
Stabilization of a very high-k tetragonal ZrO2 phase by direct doping with germaniumTsoutsou, D. / Apostolopoulos, G. / Galata, S. / Tsipas, P. / Sotiropoulos, A. / Mavrou, G. / Panayiotatos, Y. / Dimoulas, A. et al. | 2009
- 1629
-
Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFETKawanago, T. / Song, J. / Kakushima, K. / Ahmet, P. / Tsutsui, K. / Sugii, N. / Hattori, T. / Iwai, H. et al. | 2009
- 1632
-
Interfacial layer optimization of high-k/metal gate stacks for low temperature processingLinder, Barry P. / Narayanan, Vijay / Cartier, Eduard A. et al. | 2009
- 1635
-
Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devicesAndersson, C. / Rossel, C. / Sousa, M. / Webb, D.J. / Marchiori, C. / Caimi, D. / Siegwart, H. / Panayiotatos, Y. / Dimoulas, A. / Fompeyrine, J. et al. | 2009
- 1638
-
Post metallization annealing study in La2O3/Ge MOS structureSong, J. / Kakushima, K. / Ahmet, P. / Tsutsui, K. / Sugii, N. / Hattori, T. / Iwai, H. et al. | 2009
- 1642
-
Scaling potential and MOSFET integration of thermally stable Gd silicate dielectricsGottlob, H.D.B. / Schmidt, M. / Stefani, A. / Lemme, M.C. / Kurz, H. / Mitrovic, I.Z. / Davey, W.M. / Hall, S. / Werner, M. / Chalker, P.R. et al. | 2009
- 1646
-
Amorphous ternary rare-earth gate oxides for future integration in MOSFETsLopes, J.M.J. / Durğun Özben, E. / Roeckerath, M. / Littmark, U. / Lupták, R. / Lenk, St. / Luysberg, M. / Besmehn, A. / Breuer, U. / Schubert, J. et al. | 2009
- 1650
-
Characterization of interfacial reaction and chemical bonding features of LaOx/HfO2 stack structure formed on thermally-grown SiO2/Si(100)Ohta, Akio / Kanme, Daisuke / Murakami, Hideki / Higashi, Seiichiro / Miyazaki, Seiichi et al. | 2009
- 1654
-
Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectricsGundogdu, K. / Lucovsky, G. / Chung, K.-B. / Kim, J.-W. / Nordlund, D. et al. | 2009
- 1658
-
Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozoneLee, B. / Park, T.J. / Hande, A. / Kim, M.J. / Wallace, R.M. / Kim, J. / Liu, X. / Yi, J.H. / Li, H. / Rousseau, M. et al. | 2009
- 1662
-
“Higher-κ” dielectrics for advanced silicon microelectronic devices: A combinatorial research studyGreen, M.L. / Schenck, P.K. / Chang, K.-S. / Ruglovsky, J. / Vaudin, M. et al. | 2009
- 1662
-
"Higher-k" dielectrics for advanced silicon microelectronic devices: A combinatorial research studyGreen, M. L. / Schenck, P. K. / Chang, K. S. / Ruglovsky, J. / Vaudin, M. et al. | 2009
- 1665
-
Accurate electron mobility extraction in nMOSFETs by RF split CVHyvert, G. / Calmon, F. / Nguyen, T. / Poncet, A. / Plossu, C. et al. | 2009
- 1668
-
Oxygen vacancy levels and interfaces of Al2O3Liu, D. / Robertson, J. et al. | 2009
- 1672
-
Electronic structure of oxygen vacancies in La2O3, Lu2O3 and LaLuO3Xiong, Ka / Robertson, John et al. | 2009
- 1676
-
Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopyLucovsky, G. / Chung, K.-B. / Kim, J.-W. / Norlund, D. et al. | 2009
- 1680
-
Atomistic origin of high-quality “novel SiON gate dielectrics”Yamaguchi, Keita / Otake, Akira / Kobayashi, Kenji / Shiraishi, Kenji et al. | 2009
- 1683
-
Integration of Gd silicate/TiN gate stacks into SOI n-MOSFETsSchmidt, M. / Stefani, A. / Gottlob, H.D.B. / Kurz, H. et al. | 2009
- 1686
-
Molecular beam deposition of LaAlO3 on silicon for sub-22nm CMOS technological nodes: Towards a perfect control of the oxide/silicon heterointerfacePelloquin, S. / Becerra, L. / Saint-Girons, G. / Plossu, C. / Baboux, N. / Albertini, D. / Grenet, G. / Hollinger, G. et al. | 2009
- 1689
-
Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursorsDueñas, Salvador / Castán, Helena / García, Héctor / Gómez, Alfonso / Bailón, Luis / Kukli, Kaupo / Niinistö, Jaakko / Ritala, Mikko / Leskelä, Markku et al. | 2009
- 1692
-
Characterization of TiOxNy nanoparticles embedded in HfOxNy as charge trapping nodes for nonvolatile memory device applicationsLiu, Chien-Wei / Cheng, Chin-Lung / Chang-Liao, Kuei-Shu / Jeng, Jin-Tsong / Dai, Bau-Tong / Tsai, Chen-Pang et al. | 2009
- 1696
-
Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si(100)Congedo, G. / Spiga, S. / Lamagna, L. / Lamperti, A. / Lebedinskii, Yu. / Matveyev, Yu. / Zenkevich, A. / Chernykh, P. / Fanciulli, M. et al. | 2009
- 1700
-
Growth temperature dependence of epitaxial Gd2O3 films on Si(111)Niu, G. / Vilquin, B. / Baboux, N. / Plossu, C. / Becerra, L. / Saint-Grions, G. / Hollinger, G. et al. | 2009
- 1703
-
Experimental evidence of suppression on oxygen vacancy formation in Hf based high-k gate dielectrics with La incorporationLu, C. C. / Chang-Liao, K. S. / Cheng, Y. F. / Wang, T. K. et al. | 2009
- 1703
-
Experimental evidence of suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporationLu, Chun-Chang / Chang-Liao, Kuei-Shu / Cheng, Yu-Fen / Wang, Tien-Ko et al. | 2009
- 1707
-
Net negative charge in low-temperature SiO2 gate dielectric layersBoogaard, A. / Kovalgin, A.Y. / Wolters, R.A.M. et al. | 2009
- 1711
-
Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfacesCasey, P. / O’Connor, E. / Long, R. / Brennan, B. / Krasnikov, S.A. / O’Connell, D. / Hurley, P.K. / Hughes, G. et al. | 2009
- 1715
-
Degradation dynamics and breakdown of MgO gate oxidesMiranda, E. / O’Connor, E. / Hughes, G. / Casey, P. / Cherkaoui, K. / Monaghan, S. / Long, R. / O’Connell, D. / Hurley, P.K. et al. | 2009
- 1718
-
Stability and Schottky barrier of silicides: First-principles studyNakayama, T. / Sotome, S. / Shinji, S. et al. | 2009
- 1722
-
The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper)Tseng, Hsing-Huang / Kirsch, Paul / Park, C.S. / Bersuker, Gennadi / Majhi, Prashant / Hussain, Muhammad / Jammy, Raj et al. | 2009
- 1728
-
Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)Chin, Albert / Chang, M.F. / Lin, S.H. / Chen, W.B. / Lee, P.T. / Yeh, F.S. / Liao, C.C. / Li, M.-F. / Su, N.C. / Wang, S.J. et al. | 2009
- 1728
-
Flat band voltage control on low Vt metal-gate/high-k CMOSFETs with small EOT (Invited Paper)Chin, A. / Chang, M. F. / Lin, S. H. / Chen, W. B. / Lee, P. T. / Yeh, F. S. / Liao, C. C. / Li, M. F. / Su, N. C. / Wang, S. J. et al. | 2009
- 1733
-
Theoretical models for work function control (Invited Paper)Shiraishi, Kenji et al. | 2009
- 1733
-
Theoretical models for work function controlShiraishi, K. et al. | 2009
- 1737
-
Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodesChoi, Changhwan / Ando, Takashi / Cartier, Eduard / Frank, Martin M. / Iijima, Ryosuke / Narayanan, Vijay et al. | 2009
- 1740
-
Tuning the dipole at the High-k/SiO2 interface in advanced metal gate stacksCharbonnier, M. / Leroux, C. / Cosnier, V. / Besson, P. / Martin, F. / Ghibaudo, G. / Reimbold, G. et al. | 2009
- 1740
-
Tuning the dipole at the High-κ/SiO2 interface in advanced metal gate stacksCharbonnier, M. / Leroux, C. / Cosnier, V. / Besson, P. / Martin, F. / Ghibaudo, G. / Reimbold, G. et al. | 2009
- 1743
-
Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layersLin, L. / Robertson, J. et al. | 2009
- 1747
-
A first-principles study of the structural and electronic properties of III–V/thermal oxide interfacesScarrozza, M. / Pourtois, G. / Houssa, M. / Caymax, M. / Stesmans, A. / Meuris, M. / Heyns, M.M. et al. | 2009
- 1751
-
Electronic properties of defects in polycrystalline dielectric materialsMcKenna, K.P. / Shluger, A.L. et al. | 2009
- 1756
-
Point defects in Al2O3 and their impact on gate stacksWeber, J.R. / Janotti, A. / Van de Walle, C.G. et al. | 2009
- 1760
-
First principles study of substoichiometric germanium oxidesBinder, Jan Felix / Broqvist, Peter / Pasquarello, Alfredo et al. | 2009
- 1763
-
Modeling complexity of a complex gate oxideDemkov, Alexander A. / Sharia, O. / Luo, X. / Bersuker, G. / Robertson, J. et al. | 2009
- 1767
-
Mechanism of positive charge generation in the bulk of HfAlO/SiO2 stackSamanta, Piyas / Cheng, Chin-Lung / Lee, Yao-Jen / Chan, Mansun et al. | 2009
- 1771
-
Compositional dependence of work function and Fermi level position of the HfNx/SiO2 systemRothschild, J.A. / Eizenberg, M. et al. | 2009
- 1774
-
High kappa for MIM and RRAM applications: impact of the metallic electrode and oxygen vacanciesVallee, C. / Gonon, P. / Jorel, C. / El Kamel, F. / Mougenot, M. / Jousseaume, V. et al. | 2009
- 1774
-
High k for MIM and RRAM applications: Impact of the metallic electrode and oxygen vacanciesVallee, C. / Gonon, P. / Jorel, C. / El Kamel, F. / Mougenot, M. / Jousseaume, V. et al. | 2009
- 1774
-
High κ for MIM and RRAM applications: Impact of the metallic electrode and oxygen vacanciesVallée, C. / Gonon, P. / Jorel, C. / El Kamel, F. / Mougenot, M. / Jousseaume, V. et al. | 2009
- 1777
-
Effect of heat treatments on electric dipole at metal/high-k dielectric interfaces measured by in situ XPSZenkevich, Andrei / Lebedinskii, Yuri / Matveyev, Yuri / Spiga, Sabina / Lamagna, Luca / Fanciulli, Marco et al. | 2009
- 1780
-
Stability of Si impurity in high-κ oxidesUmezawa, Naoto / Shiraishi, Kenji / Chikyow, Toyohiro et al. | 2009
- 1780
-
Stability of Si impurity in high-k oxidesUmezawa, N. / Shiraishi, K. / Chikyow, T. et al. | 2009
- 1782
-
Lanthanum implantation for threshold voltage control in metal/high-k devicesFet, A. / Häublein, V. / Bauer, A.J. / Ryssel, H. / Frey, L. et al. | 2009
- 1786
-
Experimental demonstration and analysis of high performance and low 1/f noise Tri-gate MOSFETs by optimizing device structureCheng, Weitao / Teramoto, Akinobu / Ohmi, Tadahiro et al. | 2009
- 1789
-
High-k dielectrics for future generation memory devicesKittl, J.A. / Opsomer, K. / Popovici, M. / Menou, N. / Kaczer, B. / Wang, X.P. / Adelmann, C. / Pawlak, M.A. / Tomida, K. / Rothschild, A. et al. | 2009
- 1789
-
High-k dielectrics for future generation memory devices (Invited Paper)Kittl, J.A. / Opsomer, K. / Popovici, M. / Menou, N. / Kaczer, B. / Wang, X.P. / Adelmann, C. / Pawlak, M.A. / Tomida, K. / Rothschild, A. et al. | 2009
- 1796
-
Reliability of charge trapping memories with high-k control dielectrics (Invited Paper)Molas, G. / Bocquet, M. / Vianello, E. / Perniola, L. / Grampeix, H. / Colonna, J.P. / Masarotto, L. / Martin, F. / Brianceau, P. / Gély, M. et al. | 2009
- 1804
-
Data retention characteristics of MANOS-type flash memory device with different metal gates at various levels of charge injectionChang, Man / Kim, Tae-Wook / Lee, Joonmyoung / Jo, Minseok / Kim, Seonghyun / Jung, Seungjae / Choi, Hyejung / Lee, Takhee / Hwang, Hyunsang et al. | 2009
- 1807
-
Understanding the potential and limitations of HfAlO as interpoly dielectric in floating-gate Flash memoryGovoreanu, B. / Degraeve, R. / Zahid, M.B. / Nyns, L. / Cho, M. / Kaczer, B. / Jurczak, M. / Kittl, J.A. / Van Houdt, J. et al. | 2009
- 1812
-
Reliable impurity trap memory with high charge trap efficiency using ultrathin SiO2 impurity host layer for nonvolatile memory applicationJung, Seungjae / Chang, Man / Kim, Seonghyun / Lee, Joonmyung / Cho, Chunhum / Lee, Choongman / Hwang, Hyunsang et al. | 2009
- 1815
-
Comprehensive investigation of trap-assisted conduction in ultra-thin SrTiO3 layersManger, D. / Kaczer, B. / Menou, N. / Clima, S. / Wouters, D.J. / Afanas’ev, V.V. / Kittl, J.A. et al. | 2009
- 1818
-
Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 additionMüller, J. / Böscke, T.S. / Schröder, U. / Reinicke, M. / Oberbeck, L. / Zhou, D. / Weinreich, W. / Kücher, P. / Lemberger, M. / Frey, L. et al. | 2009
- 1822
-
Cycling degradation in TANOS stackGhidini, G. / Scozzari, C. / Galbiati, N. / Modelli, A. / Camerlenghi, E. / Alessandri, M. / Del Vitto, A. / Albini, G. / Grossi, A. / Ghilardi, T. et al. | 2009
- 1826
-
Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−x)AlxO2 filmsWeinreich, W. / Reiche, R. / Lemberger, M. / Jegert, G. / Müller, J. / Wilde, L. / Teichert, S. / Heitmann, J. / Erben, E. / Oberbeck, L. et al. | 2009
- 1830
-
Program efficiency and high temperature retention of SiN/high-K based memoriesVianello, E. / Bocquet, M. / Driussi, F. / Perniola, L. / Molas, G. / Selmi, L. et al. | 2009
- 1834
-
Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cellsZheng, X.F. / Zhang, W.D. / Govoreanu, B. / Zhang, J.F. / Van Houdt, J. et al. | 2009
- 1838
-
Ultra-low-energy ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory applicationsDimitrakis, P. / Mouti, A. / Bonafos, C. / Schamm, S. / Ben Assayag, G. / Ioannou-Sougleridis, V. / Schmidt, B. / Becker, J. / Normand, P. et al. | 2009
- 1842
-
Hf- and Zr-based alkaline earth perovskite dielectrics for memory applicationsŁupina, G. / Seifarth, O. / Kozłowski, G. / Dudek, P. / Dąbrowski, J. / Lippert, G. / Müssig, H.-J. et al. | 2009
- 1845
-
Electrical characterization of metal-ferroelectric (Mn-substituted BiFeO3)-insulator (HfO2)-semiconductor capacitors for nonvolatile memory applicationsJuan, Pi-chun / Wang, Chen-Hao et al. | 2009
- 1849
-
Theoretical studies on the charge trap mechanism of MONOS type memories – Relationship between atomistic information and program/erase actionsOtake, Akira / Yamaguchi, Keita / Kobayashi, Kenji / Shiraishi, Kenji et al. | 2009
- 1852
-
Charge retention improvement of charge-trapping type flash device by plasma immersion ion implantationLiu, Li-Jung / Chang-Liao, Kuei-Shu / Wu, Tai-Yu / Wang, Tien-Ko / Tsai, Wen-Fa / Ai, Chi-Fong et al. | 2009
- 1856
-
Three-dimensional modeling of the tunneling potential in MOS memories embedded with metal nanoparticlesBeniakar, M. / Kladas, A. / Xanthakis, J.P. / Sargentis, Ch. / Tsamakis, D. et al. | 2009
- 1859
-
Interface and border trap relaxation in Si–SiO2 structures with Ge nanocrystals examined by transient capacitance spectroscopyBeyer, R. / von Borany, J. / Burghardt, H. et al. | 2009
- 1863
-
A novel SONOS-type flash device with stacked charge trapping layerYe, Zong-Hao / Chang-Liao, Kuei-Shu / Liu, Te-Chiang / Wang, Tien-Ko / Tzeng, Pei-Jer / Lin, Cha-Hsin / Tsai, Min-Jinn et al. | 2009
- 1866
-
Electronic structure of memory traps in silicon nitrideGritsenko, V.A. / Nekrashevich, S.S. / Vasilev, V.V. / Shaposhnikov, A.V. et al. | 2009
- 1870
-
Reliability issues and modeling of Flash and post-Flash memory (Invited Paper)Ielmini, Daniele et al. | 2009
- 1876
-
Understanding negative bias temperature instability in the context of hole trapping (Invited Paper)Grasser, T. / Kaczer, B. / Goes, W. / Aichinger, Th. / Hehenberger, Ph. / Nelhiebel, M. et al. | 2009
- 1876
-
Understanding negative bias temperature instability in the context of hole trappingGrasser, T. / Kaczer, B. / Goes, W. / Aichinger, T. / Hehenberger, P. / Nelhiebel, M. et al. | 2009
- 1883
-
Defects and instabilities in Hf-dielectric/SiON stacksZhang, J.F. et al. | 2009
- 1883
-
Defects and instabilities in Hf-dielectric/SiON stacks (Invited Paper)Zhang, J.F. et al. | 2009
- 1888
-
Recovery study of negative bias temperature instabilityWang, Miaomiao / Zafar, Sufi / Stathis, James H. et al. | 2009
- 1891
-
The evolution of optical and electrical properties of low-k dielectrics under bias stressAtkin, J.M. / Cartier, E. / Shaw, T.M. / Lloyd, J.R. / Laibowitz, R.B. / Heinz, T.F. et al. | 2009
- 1894
-
Significant reduction of Positive Bias Temperature Instability in high-k/metal-gate nFETs by incorporation of rare earth metalsKaczer, B. / Veloso, A. / Aoulaiche, M. / Groeseneken, G. et al. | 2009
- 1897
-
Strain sensitivity of gate leakage in strained-SOI nMOSFETs: A benefit for the performance trade-off and a novel way to extract the strain-induced band offsetRochette, F. / Garros, X. / Reimbold, G. / Andrieu, F. / Cassé, M. / Mouis, M. / Ghibaudo, G. / Boulanger, F. et al. | 2009
- 1901
-
Atomic-scale theory on current-assisted thermochemical degradation mode and its field acceleration via charge trapping of O vacancy in HfSiO4Nakasaki, Yasushi / Hirano, Izumi / Kato, Koichi / Mitani, Yuichiro et al. | 2009
- 1905
-
Estimate of dielectric density using spectroscopic ellipsometryDavey, W. / Buiu, O. / Werner, M. / Mitrovic, I.Z. / Hall, S. / Chalker, P. et al. | 2009
- 1908
-
Channel hot-carrier degradation under AC stress in short channel nMOS devices with high-k gate stacksAmat, E. / Rodríguez, R. / Nafría, M. / Aymerich, X. et al. | 2009
- 1911
-
Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscaleYanev, V. / Erlbacher, T. / Rommel, M. / Bauer, A.J. / Frey, L. et al. | 2009
- 1915
-
Electronic structure of bulk and defect α- and γ-Al2O3Perevalov, T.V. / Shaposhnikov, A.V. / Gritsenko, V.A. et al. | 2009
- 1915
-
Electronic structure of bulk and defect a- and g-Al2O3Perevalov, T. V. / Shaposhnikov, A. V. / Gritsenko, V. A. et al. | 2009
- 1918
-
Wide band (0.05–40GHz) characterization and signal propagation in Cu–porous MSQ interconnectsWong, T.K.S. / Kumar, R. / Rustagi, S.C. et al. | 2009
- 1921
-
Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devicesLanza, M. / Porti, M. / Nafria, M. / Aymerich, X. / Benstetter, G. / Lodermeier, E. / Ranzinger, H. / Jaschke, G. / Teichert, S. / Wilde, L. et al. | 2009
- 1925
-
Resistive non-volatile memory devices (Invited Paper)Waser, Rainer et al. | 2009
- 1929
-
Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applicationsYoon, Jaesik / Lee, Joonmyoung / Choi, Hyejung / Park, Ju-Bong / Seong, Dong-jun / Lee, Wootae / Cho, Chunhum / Kim, Seonghyun / Hwang, Hyunsang et al. | 2009
- 1933
-
The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applicationsLee, Joonmyoung / Choi, Hyejung / Seong, Dong-jun / Yoon, Jaesik / Park, Jubong / Jung, Seungjae / Lee, Wootae / Chang, Man / Cho, Chunhum / Hwang, Hyunsang et al. | 2009
- 1936
-
Sr excess accommodation in ALD grown SrTiO3 and its impact on the dielectric responseClima, S. / Pourtois, G. / Menou, N. / Popovici, M. / Rothschild, A. / Kaczer, B. / Van Elshocht, S. / Wang, X.P. / Swerts, J. / Pierreux, D. et al. | 2009
- 1939
-
Low temperature formation of SiO2 thin films by nitric acid oxidation of Si (NAOS) and application to thin film transistor (TFT)Matsumoto, T. / Asuha / Kim, W.-B. / Yamada, M. / Imai, S. / Terakawa, S. / Kobayashi, H. et al. | 2009
- 1942
-
Unified mechanisms for structural relaxation and crystallization in phase-change memory devicesIelmini, D. / Boniardi, M. / Lacaita, A.L. / Redaelli, A. / Pirovano, A. et al. | 2009
- 1946
-
Atomic layer deposition of Ge2Sb2Te5 thin filmsRitala, Mikko / Pore, Viljami / Hatanpää, Timo / Heikkilä, Mikko / Leskelä, Markku / Mizohata, Kenichiro / Schrott, Alejandro / Raoux, Simone / Rossnagel, Stephen M. et al. | 2009
- 1950
-
Phase change and electrical characteristics of Ge–Se–Te alloysLee, Eui-Bok / Ju, Byeong-Kwon / Kim, Yong-Tae et al. | 2009
- 1954
-
Electroluminescence, charge trapping and quenching in Eu implantes SiO2–Si structuresTyagulskiy, S. / Tyagulskyy, I. / Nazarov, A. / Lysenko, V. / Rebohle, L. / Lehmann, J. / Skorupa, W. et al. | 2009
- 1957
-
Silicon nanowire NVM with high-k gate dielectric stackZhu, Xiaoxiao / Gu, D. / Li, Qiliang / Ioannou, D.E. / Baumgart, H. / Suehle, J.S. / Richter, C.A. et al. | 2009
- 1961
-
Investigation of oxidation-induced strain in a top-down Si nanowire platformNajmzadeh, M. / Bouvet, D. / Dobrosz, P. / Olsen, S. / Ionescu, A.M. et al. | 2009
- 1965
-
Piezoresistive coefficients of 〈110〉 silicon-on-insulator MOSFETs with 0.135/0.45/10 micrometers channel length with external forcesChang, W.T. / Lin, J.A. et al. | 2009
- I
-
Author Index| 2009
- IFC
-
Inside Front Cover - Editorial Board| 2009
- ii
-
Editorial Board| 2009
- v
-
Table of Contents| 2009