Synthesis, phase segregation and properties of piezo-/ferroelectric (1−x)Pb(Sc1/2Nb1/2)O3–xPbTiO3 single crystals (English)
- New search for: Bing, Y.-H.
- New search for: Ye, Z.-G.
- New search for: Bing, Y.-H.
- New search for: Ye, Z.-G.
In:
Journal of Crystal Growth
;
287
, 2
;
326-329
;
2005
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Synthesis, phase segregation and properties of piezo-/ferroelectric (1−x)Pb(Sc1/2Nb1/2)O3–xPbTiO3 single crystals
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Contributors:Bing, Y.-H. ( author ) / Ye, Z.-G. ( author )
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Published in:Journal of Crystal Growth ; 287, 2 ; 326-329
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Publisher:
- New search for: Elsevier B.V.
-
Publication date:2005-01-01
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Size:4 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 287, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 531
-
PrefaceBhat, Rajaram / Caneau, Catherine et al. | 2005
- 214
-
Theoretical and technological solutions of the striation problemScheel, Hans J. et al. | 2005
- 224
-
Growth of Ga(1−x)InxSb alloys by Vertical Bridgman technique under alternating magnetic fieldMitric, A. / Duffar, T. / Diaz-Guerra, C. / Corregidor, V. / Alves, L.C. / Garnier, C. / Vian, G. et al. | 2005
- 224
-
Growth of Ga(1#8722 x )In x Sb alloys by Vertical Bridgman technique under alternating magnetic fieldMitric, A. et al. | 2006
- 230
-
Crystal growth and optical properties of Dy-doped potassium lead bromide (KPb2Br5)Hömmerich, U. / Nyein, EiEi / Freeman, J.A. / Amedzake, P. / Trivedi, S.B. / Zavada, J.M. et al. | 2005
- 234
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Dielectric spectrum of rare-earth-doped calcium fluoride crystalsNicoara, I. / Munteanu, M. / Pecingina-Girjioaba, N. / Stef, Marius / Lighezan, L. et al. | 2005
- 239
-
Bridgman growth of LaBr3:Ce and LaCl3:Ce crystals for high-resolution gamma-ray spectrometersHiggins, W.M. / Glodo, J. / Van Loef, E. / Klugerman, M. / Gupta, T. / Cirignano, L. / Wong, P. / Shah, K.S. et al. | 2005
- 243
-
Crystal growth and infrared spectroscopy of Cr:Cd1#8722 x Zn x Te and Cr:Cd1#8722 x Mg x TeHömmerich, U. et al. | 2006
- 243
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Crystal growth and infrared spectroscopy of Cr:Cd1−xZnxTe and Cr:Cd1−xMgxTeHömmerich, U. / Bluiett, A.G. / Jones, I.K. / Trivedi, S.B. / Shah, R.T. et al. | 2005
- 248
-
Horizontal gradient freeze growth of AgGaGeS4 and AgGaGe5Se12Schunemann, Peter G. / Zawilski, Kevin T. / Pollak, Thomas M. et al. | 2005
- 252
-
Solidification interface shape control in a continuous Czochralski silicon growth systemWang, Chenlei / Zhang, Hui / Wang, Tihu / Zheng, Lili et al. | 2005
- 258
-
Quality evaluation of resistivity-controlled silicon crystalsWang, Jong Hoe et al. | 2005
- 262
-
Growth of oriented tricrystals of an Fe–Si alloyLejček, Pavel / Kopeček, Jaromír / Jarošová, Markéta et al. | 2005
- 262
-
Growth of oriented tricrystals of an Fe#8211Si alloyLej#269ek, Pavel et al. | 2006
- 267
-
Preferential growth direction in Fe-28at.%Al-4at.%Cr alloyKopeček, J. / Lejček, P. et al. | 2005
- 270
-
Comparing modified vertical gradient freezing with rotating magnetic fields or with steady magnetic and electric fieldsWang, X. / Ma, N. / Bliss, D.F. / Iseler, G.W. / Becla, P. et al. | 2005
- 275
-
3D unsteady analysis of gas turbulent convection during HPLEC InP growthBystrova, E.N. / Kalaev, V.V. et al. | 2005
- 281
-
Numerical investigation of crucible rotation effect on crystallization rate behavior during Czochralski growth of Si1−xGex crystalsSmirnova, O.V. / Kalaev, V.V. / Makarov, Yu.N. / Abrosimov, N.V. / Riemann, H. et al. | 2005
- 281
-
Numerical investigation of crucible rotation effect on crystallization rate behavior during Czochralski growth of Si1#8722 x Ge x crystalsSmirnova, O.V. et al. | 2006
- 287
-
3D mass diffusivity model of liquid metals in the presence of a magnetic fieldKhine, Y.Y. / Banish, R.M. et al. | 2005
- 291
-
Voids engulfment in shaped sapphire crystalsNicoara, Irina / Bunoiu, O.M. / Vizman, D. et al. | 2005
- 296
-
Growth of 3-inch diameter near-stoichiometric LiTaO3 by conventional Czochralski techniqueShumov, Dimitar P. / Rottenberg, Jason / Samuelson, Stuart et al. | 2005
- 300
-
The Czochralski growth of large-diameter La3Ga5.5Ta0.5O14 crystals along different orientationsLuo, J. / Shah, D. / Klemenz, C.F. / Dudley, M. / Chen, H. et al. | 2005
- 305
-
Synthesis and characterization of solid solutions in ABCO4 systemNovoselov, A. / Zimina, G. / Komissarova, L. / Pajaczkowska, A. et al. | 2005
- 309
-
Study on crystal growth and luminescence properties of Pr-doped RE2SiO5 (RE=Y, Lu)Novoselov, A. / Ogino, H. / Yoshikawa, A. / Nikl, M. / Pejchal, J. / Mares, J.A. / Beitlerova, A. / D’Ambrosio, C. / Fukuda, T. et al. | 2005
- 313
-
Crystal growth and optical absorption of pure and Ti, Mn-doped MgAl2O4 spinelJouini, A. / Sato, H. / Yoshikawa, A. / Fukuda, T. / Boulon, G. / Kato, K. / Hanamura, E. et al. | 2005
- 318
-
Single-crystal growth and superconductivity of (La1#8722 x Sr x )2CaCu2O6+ #948Gu, G.D. et al. | 2006
- 318
-
Single-crystal growth and superconductivity of (La1−xSrx)2CaCu2O6+δGu, G.D. / Hucker, M. / Kim, Y.-J. / Tranquada, J.M. / Li, Q. / Moodenbaugh, A.R. et al. | 2005
- 318
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Single-crystal growth and superconductivity of (La1-xSrx)2CaCu2O6+dGu, G. D. / Hucker, M. / Kim, Y. J. / Tranquada, J. M. / Li, Q. / Moodenbaugh, A. R. et al. | 2006
- 323
-
Growth of alkaline-earth vanadate garnet by synthetic contact metamorphism with molten V2O5–Na2SiO3 acting on dolomiteCiszek, T.F. et al. | 2005
- 323
-
Growth of alkaline-earth vanadate garnet by synthetic contact metamorphism with molten V2O5#8211Na2SiO3 acting on dolomiteCiszek, T.F. et al. | 2006
- 326
-
Synthesis, phase segregation and properties of piezo--ferroelectric (1#8722x)Pb(Sc1-2Nb1-2)O3#8211xPbTiO3 single crystalsBing, Y.-H. et al. | 2006
- 326
-
Synthesis, phase segregation and properties of piezo-/ferroelectric (1−x)Pb(Sc1/2Nb1/2)O3–xPbTiO3 single crystalsBing, Y.-H. / Ye, Z.-G. et al. | 2005
- 330
-
3D numerical simulation of heat transfer during horizontal direct crystallization of corundum single crystalsLukanina, M.A. / Hodosevitch, K.V. / Kalaev, V.V. / Semenov, V.B. / Sytin, V.N. / Raevsky, V.L. et al. | 2005
- 335
-
Growth and scintillation properties of Pr-doped Lu3Al5O12 crystalsOgino, Hiraku / Yoshikawa, Akira / Nikl, Martin / Krasnikov, Aleksei / Kamada, Kei / Fukuda, Tsuguo et al. | 2005
- 339
-
Effects of hydrogen on the properties of SiC crystals grown by physical vapor transport: Thermodynamic considerations and experimental resultsFanton, M.A. / Li, Q. / Polyakov, A.Y. / Skowronski, M. / Cavalero, R. / Ray, R. et al. | 2005
- 344
-
Epitaxial growth and characterization of silicon carbide filmsDhanaraj, Govindhan / Dudley, Michael / Chen, Yi / Ragothamachar, Balaji / Wu, Bei / Zhang, Hui et al. | 2005
- 349
-
Characterization of bulk grown GaN and AlN single crystal materialsRaghothamachar, Balaji / Bai, Jie / Dudley, Michael / Dalmau, Rafael / Zhuang, Dejin / Herro, Ziad / Schlesser, Raoul / Sitar, Zlatko / Wang, Buguo / Callahan, Michael et al. | 2005
- 354
-
Study of carrier localization in InGaN/GaN quantum well blue-light-emitting diode structuresChen, J.H. / Feng, Z.C. / Wang, J.C. / Tsai, H.L. / Yang, J.R. / Parekh, A. / Armour, E. / Faniano, P. et al. | 2005
- 359
-
Growth of nitrogen-doped SiC boules by halide chemical vapor depositionFanton, M. / Snyder, D. / Weiland, B. / Cavalero, R. / Polyakov, A. / Skowronski, M. / Chung, H. et al. | 2005
- 363
-
Growth of 6H-SiC crystals with low boron concentrationFanton, M.A. / Cavalero, R.L. / Weiland, B.E. / Ray, R.G. / Snyder, D.W. / Gamble, R.D. / Oslosky, E.J. / Everson, W.J. et al. | 2005
- 367
-
Fabrication of homoepitaxial ZnO films by low-temperature liquid-phase epitaxyEhrentraut, Dirk / Sato, Hideto / Miyamoto, Miyuki / Fukuda, Tsuguo / Nikl, Martin / Maeda, Katsumi / Niikura, Ikuo et al. | 2005
- 372
-
Seeded growth of AlN single crystals by physical vapor transportZhuang, D. / Herro, Z.G. / Schlesser, R. / Sitar, Z. et al. | 2005
- 376
-
Ammonothermal growth of GaN crystals in alkaline solutionsWang, Buguo / Callahan, M.J. / Rakes, K.D. / Bouthillette, L.O. / Wang, S.-Q. / Bliss, D.F. / Kolis, J.W. et al. | 2005
- 381
-
Hydrothermal growth and characterization of nitrogen-doped ZnO crystalsWang, Buguo / Callahan, M.J. / Bouthillette, L.O. / Xu, Chunchuan / Suscavage, M.J. et al. | 2005
- 386
-
Progress with polycrystalline silicon thin-film solar cells on glass at UNSWAberle, Armin G. et al. | 2005
- 391
-
High-throughput zone-melting recrystallization for crystalline silicon thin-film solar cellsReber, Stefan / Eyer, Achim / Haas, Fridolin et al. | 2005
- 397
-
Laser crystallization #8212 a way to produce crystalline silicon films on glass or on polymer substratesFalk, F. et al. | 2006
- 397
-
Laser crystallization — a way to produce crystalline silicon films on glass or on polymer substratesFalk, F. / Andrä, G. et al. | 2005
- 402
-
Transition metals in photovoltaic-grade ingot-cast multicrystalline silicon: Assessing the role of impurities in silicon nitride crucible lining materialBuonassisi, T. / Istratov, A.A. / Pickett, M.D. / Rakotoniaina, J.-P. / Breitenstein, O. / Marcus, M.A. / Heald, S.M. / Weber, E.R. et al. | 2005
- 408
-
Kinetics of the reactive crystallization of CuInSe2 and CuGaSe2 chalcopyrite films for solar cell applicationsPurwins, M. / Weber, A. / Berwian, P. / Müller, G. / Hergert, F. / Jost, S. / Hock, R. et al. | 2005
- 414
-
Low-temperature silicon homoepitaxy by hot-wire chemical vapor deposition with a Ta filamentTeplin, Charles W. / Wang, Qi / Iwaniczko, Eugene / Jones, Kim M. / Al-Jassim, Mowafak / Reedy, Robert C. / Branz, Howard M. et al. | 2005
- 419
-
Pocket surface and slip defect in Si epitaxyWang, Tien Y. / Carlson, Douglas J. et al. | 2005
- 423
-
A simple model explaining the preferential (100) orientation of silicon thin films made by aluminum-induced layer exchangeSchneider, J. / Sarikov, A. / Klein, J. / Muske, M. / Sieber, I. / Quinn, T. / Reehal, H.S. / Gall, S. / Fuhs, W. et al. | 2005
- 428
-
Large silicon crystal hollow-tube growth by the edge-defined film-fed growth (EFG) methodMackintosh, B. / Seidl, A. / Ouellette, M. / Bathey, B. / Yates, D. / Kalejs, J. et al. | 2005
- 433
-
Extended defects in Si films epitaxially grown by low-temperature ECRCVDRau, B. / Petter, K. / Sieber, I. / Stöger-Pollach, M. / Eyidi, D. / Schattschneider, P. / Gall, S. / Lips, K. / Fuhs, W. et al. | 2005
- 438
-
Progress in epitaxial deposition on low-cost substrates for thin-film crystalline silicon solar cells at IMECNieuwenhuysen, K. Van / Duerinckx, F. / Kuzma, I. / Gestel, D. van / Beaucarne, G. / Poortmans, J. et al. | 2005
- 442
-
Theoretical study of the initial stage of the aluminium-induced layer-exchange processSarikov, Andrey / Schneider, Jens / Klein, Juliane / Muske, Martin / Gall, Stefan et al. | 2005
- 446
-
Kinetics of SiGe chemical vapor deposition from chloride precursorsLovtsus, A.A. / Segal, A.S. / Sid’ko, A.P. / Talalaev, R.A. / Storck, P. / Kadinski, L. et al. | 2005
- 450
-
Comparison of the optical properties of diffusion-doped polycrystalline Cr:ZnSe and Cr:CdTe windowsHömmerich, U. / Jones, I.K. / Ei Nyein, Ei / Trivedi, S.B. et al. | 2005
- 454
-
Electric-field poling effect on thermal stability of monoclinic phase in Pb(Mg1/3Nb2/3)0.74Ti0.26O3 single crystalChien, R.R. / Hugo Schmidt, V. / Tu, Chi-Shun et al. | 2005
- 458
-
Influence of annealing temperature on the grain growth of samarium-doped ceriaHuang, Hong-Hsin / Chang, Hung-Peng / Chien, Yu-Tsang / Huang, Ming-Chih / Wang, Jenn-Shing et al. | 2005
- 463
-
Single domain structure and two-color holographic recording in LiNbO3:Cu:Ce crystals grown by the vertical Bridgman methodLiang, Xinan / Xu, Xuewu / Chong, Tow-Chong / Li, Minghua / Solanki, Sanjeev et al. | 2005
- 468
-
Characterization of Berthelot-type behaviors of InGaN/GaN semiconductor heterosystemsNee, Tzer-En / Shen, Hui-Tang / Wang, Jen-Cheng / Lin, Ray-Ming et al. | 2005
- 472
-
SIMS-depth profile and microstructure studies of Ti-diffused Mg-doped near-stoichiometric lithium niobate waveguideKumar, R. Mohan / Yamamoto, F. / Ichikawa, J. / Ryoken, H. / Sakaguchi, I. / Liu, X. / Nakamura, M. / Terabe, K. / Takekawa, S. / Haneda, H. et al. | 2005
- 478
-
Laser-induced damage mechanisms and improvement of optical qualities of bulk potassium dihydrogen phosphate crystalsWang, Kunpeng / Fang, Changshui / Zhang, Jianxiu / Sun, Xun / Wang, Shenglai / Gu, Qingtian / Zhao, Xian / Wang, Bo et al. | 2005
- 483
-
Structural modulation in bismuth cuprate superconductor observed by X-ray reciprocal space mappingKaneko, Satoru / Akiyama, Kensuke / Shimizu, Yoshitada / Hirabayashi, Yasuo / Ohya, Seishiro / Funakubo, Hiroshi / Yoshimoto, Mamoru et al. | 2005
- 486
-
The phase-field theory applied to CO2 and CH4 hydrateSvandal, Atle / Kvamme, Bjørn / Grànàsy, Làszlò / Pusztai, Tamàs / Buanes, Trygve / Hove, Joakim et al. | 2005
- 491
-
Computer simulation of hydrate growthBuanes, Trygve et al. | 2006
- 491
-
Computer simulation of hydrate growthBuanes, Trygve / Kvamme, Bjørn / Svandal, Atle et al. | 2005
- 491
-
Computer simulation of Formula Not Shown hydrate growthBuanes, T. / Kvamme, B. / Svandal, A. et al. | 2006
- 495
-
Two-dimensional phase-field simulation of self-assembled quantum dot formationTakaki, Tomohiro / Hasebe, Tadashi / Tomita, Yoshihiro et al. | 2005
- 500
-
Molecular beam epitaxial growth of high-quality GaN nanocolumnsVan Nostrand, J.E. / Averett, K.L. / Cortez, R. / Boeckl, J. / Stutz, C.E. / Sanford, N.A. / Davydov, A.V. / Albrecht, J.D. et al. | 2005
- 504
-
Growth and characterization of defect free GaAs nanowiresWacaser, Brent A. / Deppert, Knut / Karlsson, Lisa S. / Samuelson, Lars / Seifert, Werner et al. | 2005
- 509
-
Growth of highly ordered relaxed InAs/GaAs quantum dots on non-lithographically patterned substrates by molecular beam epitaxyGuo, W. / Guico, R.S. / Beresford, R. / Xu, J.M. et al. | 2005
- 514
-
Aligned Co nanodiscs by electrodeposition on GaAsLiang Bao, Zhi / Kavanagh, Karen L. et al. | 2005
- 518
-
Morphological evolution of Ge islands on Au-patterned SiRobinson, J.T. / Liddle, J.A. / Minor, A. / Radmilovic, V. / Dubon, O.D. et al. | 2005
- 522
-
Spontaneously grown GaN and AlGaN nanowiresBertness, K.A. / Roshko, A. / Sanford, N.A. / Barker, J.M. / Davydov, A.V. et al. | 2005
- 528
-
Framboidal vaterite aggregates and their transformation into calcite: A morphological studyNehrke, G. / Van Cappellen, P. et al. | 2005
- 532
-
Optical and electrical characterization of OMVPE-grown AlGaAsSb epitaxial layers on InP substratesRao, T.S. / So, M.G. / Jiang, W.Y. / Mayer, T. / Roorda, S. / Gujrathi, S.C. / Thewalt, M.L.W. / Bolognesi, C.R. / Watkins, S.P. et al. | 2005
- 536
-
Improved structure and performance of the GaAsSb/InP interface in a resonant tunneling diodeKollonitsch, Z. / Schimper, H.-J. / Seidel, U. / Möller, K. / Neumann, S. / Tegude, F.-J. / Willig, F. / Hannappel, T. et al. | 2005
- 541
-
Microstructure of ordered nanodomains induced by Bi surfactant in OMVPE-grown GaAsSbJiang, W.Y. / Liu, J.Q. / Zhang, X. / Thewalt, M.L.W. / Kavanagh, K.L. / Watkins, S.P. et al. | 2005
- 545
-
Metal organic chemical vapor deposition of metaphorphic InAs–GaSb superlattices on (001) GaAs substrates for mid-IR photodetector applicationsZhang, X.B. / Ryou, J.-H. / Dupuis, R.D. / Mou, S. / Chuang, S.L. / Xu, C. / Hsieh, K.-C. et al. | 2005
- 545
-
Metal organic chemical vapor deposition of metaphorphic InAs#8211GaSb superlattices on (001) GaAs substrates for mid-IR photodetector applicationsZhang, X.B. et al. | 2006
- 550
-
MOCVD growth of highly strained 1.3 #956m InGaAs:Sb-GaAs vertical cavity surface emitting laserChang, Y.A. et al. | 2006
- 550
-
MOCVD growth of highly strained 1.3 mm InGaAs:Sb/GaAs vertical cavity surface emitting laserChang, Y. A. / Chu, J. T. / Ko, C. T. / Kuo, H. C. / Lin, C. F. / Wang, S. C. et al. | 2006
- 550
-
MOCVD growth of highly strained 1.3 μm InGaAs:Sb/GaAs vertical cavity surface emitting laserChang, Y.A. / Chu, J.T. / Ko, C.T. / Kuo, H.C. / Lin, C.F. / Wang, S.C. et al. | 2005
- 554
-
Carrier transport by formation of two-dimensional hole gas in p-type Al0.1Ga0.9N/GaN superlattice for AlGaInN-based laser diodeLee, Sung-Nam / Jang, T. / Son, J.K. / Paek, H.S. / Sakong, T. / Yoon, E. / Nam, O.H. / Park, Y. et al. | 2005
- 558
-
Enhanced optical properties of InGaN MQWs with InGaN underlying layersSon, J.K. / Lee, S.N. / Sakong, T. / Paek, H.S. / Nam, O. / Park, Y. / Hwang, J.S. / Kim, J.Y. / Cho, Y.H. et al. | 2005
- 562
-
Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contactsSaripalli, Y.N. / Zeng, C. / Long, J.P. / Barlage, D.W. / Johnson, M.A.L. / Braddock, D. et al. | 2005
- 566
-
Modeling the parasitic chemical reactions of AlGaN organometallic vapor-phase epitaxyColtrin, Michael E. / Randall Creighton, J. / Mitchell, Christine C. et al. | 2005
- 572
-
Emissivity-correcting near-UV pyrometry for group-III nitride OMVPECreighton, J.R. / Koleske, D.D. / Mitchell, C.C. et al. | 2005
- 577
-
Effect of thermal annealing induced by p-type layer growth on blue and green LED performanceLee, Wonseok / Limb, Jae / Ryou, Jae-Hyun / Yoo, Dongwon / Chung, Theodore / Dupuis, Russell D. et al. | 2005
- 582
-
Quaternary AlInGaN multiple quantum well 368nm light-emitting diodeWang, Te-Chung / Kuo, Hao-Chung / Lee, Zheng-Hong / Chuo, Chang-Cheng / Tsai, Min-Ying / Tsai, Ching-En / Lee, Tsin-Dong / Lu, Tien-Chang / Chi, Jim et al. | 2005
- 586
-
Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafersCollazo, R. / Mita, S. / Aleksov, A. / Schlesser, R. / Sitar, Z. et al. | 2005
- 591
-
Correlation of the structural and ferromagnetic properties of Ga1−xMnxN grown by metalorganic chemical vapor depositionKane, Matthew H. / Strassburg, Martin / Fenwick, William E. / Asghar, Ali / Payne, Adam M. / Gupta, Shalini / Song, Qing / John Zhang, Z. / Dietz, Nikolaus / Summers, Christopher J. et al. | 2005
- 591
-
Correlation of the structural and ferromagnetic properties of Ga1#8722 x Mn x N grown by metalorganic chemical vapor depositionKane, Matthew H. et al. | 2006
- 596
-
A nucleation study of group III-nitride multifunctional nanostructuresGupta, Shalini / Kang, Hun / Strassburg, Martin / Asghar, Ali / Kane, Matthew / Fenwick, William E. / Dietz, Nikolaus / Ferguson, Ian T. et al. | 2005
- 601
-
Effect of V/III ratio in AlN and AlGaN MOVPELobanova, A.V. / Mazaev, K.M. / Talalaev, R.A / Leys, M. / Boeykens, S. / Cheng, K. / Degroote, S. et al. | 2005
- 605
-
Effects of reactor pressure and residence time on GaN MOVPE growth efficiencyLundin, W.V. / Zavarin, E.E. / Sizov, D.S. / Sinitsin, M.A. / Tsatsul’nikov, A.F. / Kondratyev, A.V. / Yakovlev, E.V. / Talalaev, R.A. et al. | 2005
- 610
-
MOCVD growth of thick AlN and AlGaN superlattice structures on Si substratesMastro, M.A. / Eddy, C.R. Jr. / Gaskill, D.K. / Bassim, N.D. / Casey, J. / Rosenberg, A. / Holm, R.T. / Henry, R.L. / Twigg, M.E. et al. | 2005
- 615
-
Characteristics of InGaAsN-GaAsSb type-II “W” quantum wellsYeh, J.-Y. / Mawst, L.J. / Khandekar, A.A. / Kuech, T.F. / Vurgaftman, I. / Meyer, J.R. / Tansu, N. et al. | 2005
- 615
-
Characteristics of InGaAsN-GaAsSb type-II #8220W#8221 quantum wellsYeh, J.-Y. et al. | 2006
- 620
-
Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMSKim, K.S. / Kim, T. / Park, Y.J. / Baek, S.I. / Kim, Y.W. / Sun, H.D. / Dawson, M.D. et al. | 2005
- 625
-
Characterisation of GaAsN layers grown by MOVPEPelosi, Claudio / Attolini, Giovanni / Bosi, Matteo / Avella, Manuel / Calicchio, Marco / Musayeva, Nahida / Jimenez, Juan et al. | 2005
- 629
-
Highly efficient InGaAs QW vertical external cavity surface emitting lasers emitting at 1060nmKim, K.S. / Yoo, J.R. / Lee, S.M. / Lim, S.J. / Kim, J.Y. / Lee, J.H. / Cho, S.H. / Kim, T. / Park, Y.J. et al. | 2005
- 633
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Avoidance of surface-related defects in MOVPE-grown InGaP layersKnauer, A. / Krispin, P. / Dadgar, A. / Weyers, M. et al. | 2005
- 637
-
In situ determination and control of AlGaInP composition during MOVPE growthZorn, M. / Zettler, J.-T. / Knauer, A. / Weyers, M. et al. | 2005
- 642
-
Material studies regarding InP-based high-efficiency solar cellsSchimper, H.-J. / Kollonitsch, Z. / Möller, K. / Seidel, U. / Bloeck, U. / Schwarzburg, K. / Willig, F. / Hannappel, T. et al. | 2005
- 647
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Zn enhancement during surfactant-mediated growth of GaInP and GaPChapman, D.C. / Howard, A.D. / Stringfellow, G.B. et al. | 2005
- 652
-
A new MOVPE reactor for heteroepitaxial GaAs deposition on large-scale Ge substratesPelosi, C. / Attolini, G. / Bosi, M. / Moscatelli, D. / Veneroni, A. / Masi, M. et al. | 2005
- 656
-
On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parametersMitrovic, B. / Gurary, A. / Kadinski, L. et al. | 2005
- 664
-
Effect of group V partial pressure on the kinetics of selective area MOVPE for GaAs on (100) exact and misoriented substrateSong, Haizheng / Song, Xueliang / Sugiyama, Masakazu / Nakano, Yoshiaki / Shimogaki, Yukihiro et al. | 2005
- 668
-
Control of abnormal edge growth in selective area MOVPE of InPSugiyama, M. / Waki, N. / Nobumori, Y. / Song, H. / Nakano, T. / Arakawa, T. / Nakano, Y. / Shimogaki, Y. et al. | 2005
- 673
-
Epitaxial growth of thick GaAs on orientation-patterned wafers for nonlinear optical applicationsBliss, D.F. / Lynch, C. / Weyburne, D. / O’Hearn, K. / Bailey, J.S. et al. | 2005
- 679
-
Exceptionally stable vapor delivery of trimethylindium under intense OMVPE growth conditionsShenai-Khatkhate, Deodatta V. / Ware, Robert A. / DiCarlo, Ronald L. Jr / Polcari, Robert F. / Marsman, Charles J. / Woelk, Egbert / Keiter, Alan G. et al. | 2005
- 684
-
Designing novel organogermanium OMVPE precursors for high-purity germanium filmsWoelk, Egbert / Shenai-Khatkhate, Deodatta V. / DiCarlo, Ronald L. Jr. / Amamchyan, Artashes / Power, Michael B. / Lamare, Bruno / Beaudoin, Grégoire / Sagnes, Isabelle et al. | 2005
- 688
-
Metal-organic chemical vapor deposition of ZnOPan, M. / Fenwick, W.E. / Strassburg, M. / Li, N. / Kang, H. / Kane, M.H. / Asghar, A. / Gupta, S. / Varatharajan, R. / Nause, J. et al. | 2005
- 694
-
Horizontal growth of epitaxial (100) #946-FeSi2 templates by metal#8211organic chemical vapor depositionAkiyama, Kensuke et al. | 2006
- 694
-
Horizontal growth of epitaxial (100) b-FeSi2 templates by metal-organic chemical vapor depositionAkiyama, K. / Kaneko, S. / Hirabayashi, Y. / Suemasu, T. / Funakubo, H. et al. | 2006
- 694
-
Horizontal growth of epitaxial (100) β-FeSi2 templates by metal–organic chemical vapor depositionAkiyama, Kensuke / Kaneko, Satoru / Hirabayashi, Yasuo / Suemasu, Takashi / Funakubo, Hiroshi et al. | 2005
- 698
-
Author Index vol. 287| 2006
- 708
-
Subject Index vol. 287| 2006
- I
-
Instructions to Authors| 2006
- v
-
Contents| 2006