Properties of epitaxial silicon layers on buried silicon nitride produced by ion implantation (English)
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In:
Vacuum
;
36
, 11-12
;
933-937
;
1986
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Properties of epitaxial silicon layers on buried silicon nitride produced by ion implantation
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Contributors:
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Published in:Vacuum ; 36, 11-12 ; 933-937
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Publisher:
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Publication date:1986-01-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 36, Issue 11-12
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 767
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IntroductionPalmer, D.W. / Grant, W.A. / Colligon, J.S. et al. | 1986
- 769
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The use of ion beams in thin film depositionArmour, DG / Bailey, P / Sharples, G et al. | 1986
- 777
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Production of thin films with use of a cylindrical low energy ion gunDepauw, JM / Renier, M / Hannotiau, M / Lucas, AA et al. | 1986
- 781
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New facility for simultaneous implantation and evaporationdu Marchie van Voorthuysen, EH et al. | 1986
- 787
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Ion-beam assisted etching of semiconductorsZalm, PC et al. | 1986
- 799
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Etching of SiO2 in SF6 plasmas: the role of ions and electrons in etching mechanismsPetit, B / Durandet, A / Pelletier, J et al. | 1986
- 803
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Dry etching of indium phosphideDoughty, GF / Thoms, S / Law, V / Wilkinson, CDW et al. | 1986
- 807
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Ion implantation and ion assisted coating of metalsDearnaley, G / Goode, PD / Minter, FJ / Peacock, AT / Hughes, W / Proctor, GW et al. | 1986
- 813
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Wear behaviour of ion implanted steel surfacesDienel, G / Kreissig, U / Richter, E et al. | 1986
- 817
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XPS studies at various depths of low energy N2+ ions implanted on 304 stainless steelPrabhawalkar, PD / Raole, PM / Kothari, DC / Nair, MR et al. | 1986
- 821
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Argon ion bombardment induced mixing in CoSi: interfacial oxide effectsCollins, RA / Edwards, SC / Dearnaley, G et al. | 1986
- 825
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Impregnated-electrode-type liquid metal ion sourceIshikawa, J / Takagi, T et al. | 1986
- 833
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Recent results with a high-current, heavy-ion source systemKeller, R / Spädtke, P / Emig, H et al. | 1986
- 837
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Rf multipolar plasma for broad and reactive ion beamsLejeune, C / Grandchamp, JP / Kessi, O / Gilles, JP et al. | 1986
- 841
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Characterization of a 3 cm Kaufman ion source with nitrogen feed gasVan Vechten, D / Hubler, GK / Donovan, EP et al. | 1986
- 847
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Current-voltage curves in liquid metal ion sourcesMair, GLR et al. | 1986
- 851
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Triplasmatron sources for broad and reactive ion beamsLejeune, C / Grandchamp, JP / Kessi, O / Gilles, JP et al. | 1986
- 857
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Electrostatic reflex plasma source as a plasma bridge neutralizerLejeune, C / Grandchamp, JP / Kessi, O et al. | 1986
- 861
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Quantitative SIMS measurements of Al(x)Ga(1−x)As as a function of alloy composition and ion beam energyClark, EA et al. | 1986
- 865
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Directly heated LaB6 cathodes for ion source operationLeung, KN et al. | 1986
- 869
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Operational characteristic of a compact microwave ion sourceWalther, SR / Leung, KN et al. | 1986
- 873
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Plasma parameter measurements in a tandem multipole hydrogen plasmaHopkins, MB / Graham, WG et al. | 1986
- 877
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Ion beam synthesis of thin buried layers of SiO2 in siliconHemment, PLF / Reeson, KJ / Kilner, JA / Chater, RJ / Marsh, C / Booker, GR / Celler, GK / Stoemenos, J et al. | 1986
- 883
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The formation of buried oxide layers by ion implantationWoods, TA / Antonelli, E / Collins, RA / Chivers, DJ / Dearnaley, G et al. | 1986
- 887
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Neutral and ionized alkaline metal bombardment type heavy negative ion source (NIABNIS)Ishikawa, J / Tsuji, H / Takagi, T et al. | 1986
- 891
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Formation mechanism and structures of buried oxy-nitride layers produced by ion beam synthesisReeson, KJ / Hemment, PLF / Kilner, JA / Chater, RJ / Meekison, CD / Marsch, C / Booker, GR / Davis, JR et al. | 1986
- 897
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Several mini ion sourcesZhizhong, Song / Jinxiang, Yu / Renxing, Li / Zhongxi, Yuan et al. | 1986
- 901
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Oxidation resistance and optical reflectivity of Al-implanted 304 stainless steelLin, W-L et al. | 1986
- 905
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Characterization of defects due to low voltage thin film sputter deposition by means of the MIS junctionKeppner, H / Munz, P / Maier, C / Bucher, E et al. | 1986
- 909
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The first observation of RHEED intensity oscillation during the growth of a metal-metal multilayered film by MBE and the electrical resistivity measurement of Mo/Al multilayered films grown by rf sputteringDoyama, M / Yamamoto, R / Kaneko, T / Imafuku, M / Kokubu, C / Izumiya, T / Hanamura, T et al. | 1986
- 913
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Rapid automatic compensation for charging effects during the SIMS depth profiling of semiconductorsDowsett, MG / McPhail, DS / Parker, EHC / Fox, H et al. | 1986
- 917
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Low-energy hydrogen implantation for silicon Schottky barrier modificationAshok, S / Ringel, SA et al. | 1986
- 921
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The mechanism for activating tin implants in GaAsBensalem, R / Sealy, BJ et al. | 1986
- 925
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Microstructure of silicon-on-insulator structures produced by high dose nitrogen implantation of siliconMeekison, CD / Booker, GR / Reeson, KJ / Hemment, PLF / Chater, RJ / Kilner, JA / Davis, JR et al. | 1986
- 929
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Direct formation of dielectric thin films on silicon by low energy ion beam bombardmentTodorov, SS / Yu, CF / Fossum, ER et al. | 1986
- 933
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Properties of epitaxial silicon layers on buried silicon nitride produced by ion implantationSkorupa, W / Kreissig, U / Oertel, H / Bartsch, H et al. | 1986
- 939
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Laser excitation of ion beamsHallin, Reinhold / Arnesen, Arne / Nordling, Carl / Vogel, Olle / Wännström, Anders et al. | 1986
- 945
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High accuracy ion optics computingAmos, R.J. / Evans, G.A. / Smith, R. et al. | 1986
- 953
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A new approach to ion implanter mass analysis opticsAitken, D et al. | 1986
- 961
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Focused ion beam millingWatkins, R.E.J. / Rockett, P. / Thoms, S. / Clampitt, R. / Syms, R. et al. | 1986
- 969
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Heavy ion radio frequency quadrupole (RFQ) accelerators, a new tool for ion implantationAngert, N / Müller, RW et al. | 1986
- 973
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Rf-broad-beam ion source for reactive sputteringLossy, R / Engemann, J et al. | 1986
- 977
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AIN: a solid Al+ ion sourcePelletier, J et al. | 1986
- 981
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Neutral and ion beam SIMS of non-conducting materialsVan den Berg, JA et al. | 1986
- 991
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The contribution of SIMS to the characterization of III–V semiconductor layers grown by molecular beam epitaxySpiller, GDT / Andrews, DA et al. | 1986
- 997
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Loss of depth resolution with depth in secondary ion mass spectrometry (SIMS) due to variations in ion dose density across the rastered areaMcPhail, DS / Dowsett, MG / Parker, EHC et al. | 1986
- 1001
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SIMS analysis of isotopic impurities in ion implantsSykes, DE / Blunt, RT et al. | 1986
- 1005
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Interaction of ion beams with polymers, with particular reference to SIMSBriggs, D / Hearn, MJ et al. | 1986
- 1011
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SIMS analysis of GaAs/GaAIAs superlattice including sub-monolayer grown by MBESykes, DE / Clark, EA / Courtney, SJ / Blackmore, GW / Whitehouse, CR / Emeny, MT et al. | 1986
- 1017
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Accelerated-ion beam doping during Si growth by molecular beam epitaxy and ion-enhanced In film deposition using a low-energy (40–300 eV) In ion source| 1986
- 1019
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Property modification and syntheses by low energy particle bombardment concurrent with film growth| 1986
- 1019
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The depth of disorder generation in low energy Ar+ ion implanted Si| 1986
- 1019
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Ion source for spacecraft potential control| 1986
- 1019
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Atomic mixing of Sb and Si| 1986
- 1020
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The physics of liquid metal field-ion source| 1986
- 1020
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Extension of 400 keV proton beam facility for the characterisation of superlattices| 1986
- 1020
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Depth profiles of cutlery steel by SIMS| 1986
- 1020
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Rare gas incorporation in ion beam sputtering deposited Si films| 1986
- 1021
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The use of microfocussed ion beams for small area depth profiles| 1986
- 1021
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Ion-surface interactions in the study of dry etching| 1986
- 1023
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Author index of articles| 1986
- I
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Editorial: Software survey section| 1986