Groove type MOSFET and manufacturing method thereof (Chinese)
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- New search for: ZHANG LEI
- New search for: TIAN BINWEI
- New search for: ZHANG LEI
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2024
- Patent / Electronic Resource
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Title:Groove type MOSFET and manufacturing method thereof
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Additional title:一种沟槽型MOSFET及其制造方法
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Patent number:CN117637823
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Patent applicant:
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Patent family:
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Contributors:ZHANG LEI ( author ) / TIAN BINWEI ( author )
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Publisher:
- New search for: Europäisches Patentamt
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Publication date:2024-03-01
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Type of media:Patent
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Type of material:Electronic Resource
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Language:Chinese
- New search for: H01L
- Further information on International Patent Classification
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Classification:
IPC: H01L Halbleiterbauelemente, SEMICONDUCTOR DEVICES -
Source: