SIC CRYSTALS WITH AN OPTIMAL ORIENTATION OF LATTICE PLANES FOR FISSURE REDUCTION AND METHOD OF PRODUCING SAME (English)
Free access
- New search for: VOGEL MICHAEL
- New search for: SCHMITT ERWIN
- New search for: WEBER ARND-DIETRICH
- New search for: BARZ RALPH-UWE
- New search for: BANNSPACH DOMINIK
- New search for: VOGEL MICHAEL
- New search for: SCHMITT ERWIN
- New search for: WEBER ARND-DIETRICH
- New search for: BARZ RALPH-UWE
- New search for: BANNSPACH DOMINIK
2022
- Patent / Electronic Resource
-
Title:SIC CRYSTALS WITH AN OPTIMAL ORIENTATION OF LATTICE PLANES FOR FISSURE REDUCTION AND METHOD OF PRODUCING SAME
-
Additional title:SIC-KRISTALLE MIT OPTIMALER ORIENTIERUNG VON GITTEREBENEN ZUR SPALTREDUZIERUNG UND HERSTELLUNGSVERFAHREN DAFÜR
CRISTAUX DE CARBURE DE SILICIUM AYANT UNE ORIENTATION OPTIMALE DES PLANS DE RÉSEAU POUR LA RÉDUCTION DES FISSURES ET SON PROCÉDÉ DE PRODUCTION -
Patent number:EP3943644
-
Patent applicant:
-
Patent family:
-
Contributors:VOGEL MICHAEL ( author ) / SCHMITT ERWIN ( author ) / WEBER ARND-DIETRICH ( author ) / BARZ RALPH-UWE ( author ) / BANNSPACH DOMINIK ( author )
-
Publisher:
- New search for: Europäisches Patentamt
-
Publication date:2022-01-26
-
Type of media:Patent
-
Type of material:Electronic Resource
-
Language:English
- New search for: C30B
- Further information on International Patent Classification
-
Classification:
IPC: C30B SINGLE-CRYSTAL GROWTH, Züchten von Einkristallen -
Source: