RESISTIVE MEMORY DEVICE HAVING FIELD ENHANCED FEATURES (English)
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- New search for: LAM SI-TY
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2016
- Patent / Electronic Resource
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Title:RESISTIVE MEMORY DEVICE HAVING FIELD ENHANCED FEATURES
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Patent number:US2016141494
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Patent applicant:
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Patent family:
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Contributors:LAM SI-TY ( author ) / SHENG XIA ( author ) / HENZE RICHARD H ( author ) / ZHOU ZHANG-LIN ( author )
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Publisher:
- New search for: Europäisches Patentamt
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Publication date:2016-05-19
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Type of media:Patent
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Type of material:Electronic Resource
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Language:English
- New search for: H01L
- Further information on International Patent Classification
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Classification:
IPC: H01L Halbleiterbauelemente, SEMICONDUCTOR DEVICES -
Source: