SiC-SIT Circuit Breakers With Controllable Interruption Voltage for 400-V DC Distribution Systems (English)
- New search for: Sato, Yukihiko
- New search for: Tanaka, Yasunori
- New search for: Fukui, Akiyoshi
- New search for: Yamasaki, Mikio
- New search for: Ohashi, Hiromichi
- New search for: Sato, Yukihiko
- New search for: Tanaka, Yasunori
- New search for: Fukui, Akiyoshi
- New search for: Yamasaki, Mikio
- New search for: Ohashi, Hiromichi
In:
IEEE Transactions on Power Electronics
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29
, 5
;
2597-2605
;
2014
- Article (Journal) / Electronic Resource
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Title:SiC-SIT Circuit Breakers With Controllable Interruption Voltage for 400-V DC Distribution Systems
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Contributors:Sato, Yukihiko ( author ) / Tanaka, Yasunori ( author ) / Fukui, Akiyoshi ( author ) / Yamasaki, Mikio ( author ) / Ohashi, Hiromichi ( author )
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Published in:IEEE Transactions on Power Electronics ; 29, 5 ; 2597-2605
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Publisher:
- New search for: IEEE
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Publication date:2014-05-01
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Size:1124794 byte
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 29, Issue 5
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2153
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SPECIAL ISSUE ON WIDE BANDGAP DEVICES AND THEIR APPLICATIONS - EDITORIAL - Special Issue on Wide Bandgap Power Devices and Their Applications, 2014Nee, H-P et al. | 2014
- 2153
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Editorial: Special Issue on Wide Bandgap Power Devices and Their Applications, 2014Nee, Hans-Peter / Kolar, Johann W. / Friedrichs, Peter / Rabkowski, Jacek et al. | 2014
- 2155
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A Survey of Wide Bandgap Power Semiconductor DevicesMillan, Jose / Godignon, Philippe / Perpina, Xavier / Perez-Tomas, Amador / Rebollo, Jose et al. | 2014
- 2155
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SPECIAL ISSUE PAPERS - Survey and Device Related Topics - A Survey of Wide Bandgap Power Semiconductor DevicesMillán, J et al. | 2014
- 2164
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Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTsHuang, Huolin / Liang, Yung C. / Samudra, Ganesh S. / Chang, Ting-Fu / Huang, Chih-Fang et al. | 2014
- 2174
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Design and Performances of 4H-SiC Bipolar Mode Field Effect Transistor (BMFETs)Bellone, Salvatore / Di Benedetto, Luigi et al. | 2014
- 2180
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Analysis and Experimental Verification of the Influence of Fabrication Process Tolerances and Circuit Parasitics on Transient Current Sharing of Parallel-Connected SiC JFETsLim, Jang-Kwon / Peftitsis, Dimosthenis / Rabkowski, Jacek / Bakowski, Mietek / Nee, Hans-Peter et al. | 2014
- 2192
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1000-H Evaluation of a 1200-V, 880-A All-SiC Dual ModuleSalem, Thomas E. / Wood, Robert A. et al. | 2014
- 2192
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Reliability - 1000-H Evaluation of a 1200-V, 880-A All-SiC Dual ModuleSalem, T E et al. | 2014
- 2199
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Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power ApplicationsMeneghini, Matteo / Bisi, Davide / Marcon, Denis / Stoffels, Steve / Van Hove, Marleen / Wu, Tian-Li / Decoutere, Stefaan / Meneghesso, Gaudenzio / Zanoni, Enrico et al. | 2014
- 2208
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Analytical Loss Model of High Voltage GaN HEMT in Cascode ConfigurationHuang, Xiucheng / Li, Qiang / Liu, Zhengyang / Lee, Fred C. et al. | 2014
- 2208
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Modeling - Analytical Loss Model of High Voltage GaN HEMT in Cascode ConfigurationHuang, X et al. | 2014
- 2220
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Datasheet Driven Silicon Carbide Power MOSFET ModelMudholkar, Mihir / Ahmed, Shamim / Ericson, M. Nance / Frank, S. Shane / Britton, Charles L. / Mantooth, H. Alan et al. | 2014
- 2229
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Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature RangeSun, Kai / Wu, Hongfei / Lu, Juejing / Xing, Yan / Huang, Lipei et al. | 2014
- 2238
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Characterization and Scalable Modeling of Power Semiconductors for Optimized Design of Traction Inverters with Si- and SiC-DevicesMerkert, Arvid / Krone, Tobias / Mertens, Axel et al. | 2014
- 2246
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Modeling of a Buck Converter With a SiC JFET to Predict EMC Conducted EmissionsRondon-Pinilla, Eliana / Morel, Florent / Vollaire, Christian / Schanen, Jean-Luc et al. | 2014
- 2261
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Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment ApplicationsNavarro, Luis A. / Perpina, Xavier / Godignon, Philippe / Montserrat, Josep / Banu, Viorel / Vellvehi, Miquel / Jorda, Xavier et al. | 2014
- 2261
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Packaging and Modules - Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment ApplicationsNavarro, L A et al. | 2014
- 2272
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The Investigation of a 6.5-kV, 1-kA SiC Diode Module for Medium Voltage ConvertersFilsecker, Felipe / Alvarez, Rodrigo / Bernet, Steffen et al. | 2014
- 2281
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Evaluation of Encapsulation Materials for High-Temperature Power Device PackagingLocatelli, Marie-Laure / Khazaka, Rabih / Diaham, Sombel / Pham, Cong-Duc / Bechara, Mireille / Dinculescu, Sorin / Bidan, Pierre et al. | 2014
- 2289
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Development of Advanced All-SiC Power ModulesLiang, Zhenxian / Ning, Puqi / Wang, Fred et al. | 2014
- 2296
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A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate DriverWu, Xinke / Cheng, Shidong / Xiao, Qiang / Sheng, Kuang et al. | 2014
- 2307
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A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency ApplicationsChen, Zheng / Yao, Yiying / Boroyevich, Dushan / Ngo, Khai D. T. / Mattavelli, Paolo / Rajashekara, Kaushik et al. | 2014
- 2321
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High Temperature Aspects - A SiC NMOS Linear Voltage Regulator for High-Temperature ApplicationsValle-Mayorga, J A et al. | 2014
- 2321
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A SiC NMOS Linear Voltage Regulator for High-Temperature ApplicationsValle-Mayorga, Javier A. / Rahman, Ashfaqur / Mantooth, Homer Alan et al. | 2014
- 2329
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High Temperature Stability and the Performance Degradation of SiC MOSFETsZhou, Weicheng / Zhong, Xueqian / Sheng, Kuang et al. | 2014
- 2338
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A 200 °C Safety System at Power-Up of Normally On SiC JFETs InverterRisaletto, D et al. | 2014
- 2338
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A 200 °C Safety System at Power-Up of Normally On SiC JFETs InvertersRisaletto, Damien / Bergogne, Dominique / Dubois, Fabien / Morel, Herve / Allard, Bruno / Meuret, Regis et al. | 2014
- 2345
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A 120 °C Ambient Temperature Forced Air-Cooled Normally-off SiC JFET Automotive Inverter SystemWrzecionko, Benjamin / Bortis, Dominik / Kolar, Johann W. et al. | 2014
- 2359
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Optimization of the Driver of GaN Power Transistors Through Measurement of Their Thermal BehaviorHoffmann, Lionel / Gautier, Cyrille / Lefebvre, Stephane / Costa, Francois et al. | 2014
- 2359
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Gate and Base Drivers and Aspects on Switching Speed - Optimization of the Driver of GaN Power Transistors Through Measurement of Their Thermal BehaviorHoffmann, L et al. | 2014
- 2367
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Dual-Function Gate Driver for a Power Module With SiC Junction Field-Effect TransistorsColmenares, Juan / Peftitsis, Dimosthenis / Rabkowski, Jacek / Sadik, Diane-Perle / Nee, Hans-Peter et al. | 2014
- 2380
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Instability in Half-Bridge Circuits Switched With Wide Band-Gap TransistorsLemmon, Andrew / Mazzola, Michael / Gafford, James / Parker, Christopher et al. | 2014
- 2393
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An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation With Hard-Switched All-Si, Si-SiC, and All-SiC Device CombinationsOswald, Niall / Anthony, Philip / McNeill, Neville / Stark, Bernard H. et al. | 2014
- 2408
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A Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction TransistorsTolstoy, Georg / Peftitsis, Dimosthenis / Rabkowski, Jacek / Palmer, Patrick R. / Nee, Hans-Peter et al. | 2014
- 2418
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Cascode Circuits - On the Use of Front-End Cascode Rectifiers Based on Normally On SiC JFET and Si MOSFETVázquez, A et al. | 2014
- 2418
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On the Use of Front-End Cascode Rectifiers Based on Normally On SiC JFET and Si MOSFETVazquez, Aitor / Rodriguez, Alberto / Fernandez, Marcos / Hernando, Marta M. / Maset, Enrique / Sebastian, Javier et al. | 2014
- 2428
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Switching Performance Comparison of the SiC JFET and SiC JFET/Si MOSFET Cascode ConfigurationAlonso, Alberto Rodriguez / Diaz, Marcos Fernandez / Lamar, Diego. G. / de Azpeitia, Manuel Arias Perez / Hernando, Marta M. / Sebastian, Javier et al. | 2014
- 2441
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Investigations of 600-V GaN HEMT and GaN Diode for Power Converter ApplicationsMitova, Radoslava / Ghosh, Rajesh / Mhaskar, Uday / Klikic, Damir / Wang, Miao-Xin / Dentella, Alain et al. | 2014
- 2453
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Evaluation and Application of 600 V GaN HEMT in Cascode StructureHuang, Xiucheng / Liu, Zhengyang / Li, Qiang / Lee, Fred C. et al. | 2014
- 2462
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High-Frequency PWM Buck Converters Using GaN-on-SiC HEMTsRodriguez, Miguel / Zhang, Yuanzhe / Maksimovic, Dragan et al. | 2014
- 2462
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DC-DC Converters - High-Frequency PWM Buck Converters Using GaN-on-SiC HEMTsRodríguez, M et al. | 2014
- 2474
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Evaluation of SiC BJTs for High-Power DC–DC ConvertersCalderon-Lopez, Gerardo / Forsyth, Andrew J. / Gordon, David L. / McIntosh, Jim R. et al. | 2014
- 2482
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Parallel-Operation of Discrete SiC BJTs in a 6-kW/250-kHz DC/DC Boost ConverterRabkowski, Jacek / Peftitsis, Dimosthenis / Nee, Hans-Peter et al. | 2014
- 2492
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Design and Evaluation of Reduced Self-Capacitance Inductor in DC/DC Converters with Fast-Switching SiC TransistorsZdanowski, Mariusz / Kostov, Konstantin / Rabkowski, Jacek / Barlik, Roman / Nee, Hans-Peter et al. | 2014
- 2500
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A Wide Bandgap Device-Based Isolated Quasi-Switched-Capacitor DC/DC ConverterZhang, Xuan / Yao, Chengcheng / Li, Cong / Fu, Lixing / Guo, Feng / Wang, Jin et al. | 2014
- 2511
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Classification and Comparative Evaluation of PV Panel-Integrated DC–DC Converter ConceptsKasper, Matthias / Bortis, Dominik / Kolar, Johann W. et al. | 2014
- 2527
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Resonant and Soft-Switching Converters - An Experimental Evaluation of SiC Switches in Soft-Switching ConvertersRanstad, P et al. | 2014
- 2527
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An Experimental Evaluation of SiC Switches in Soft-Switching ConvertersRanstad, Per / Nee, Hans-Peter / Linner, Jorgen / Peftitsis, Dimosthenis et al. | 2014
- 2539
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Design and Implementation of a High-Efficiency Multiple-Output Resonant Converter for Induction Heating Applications Featuring Wide Bandgap DevicesSarnago, Hector / Lucia, Oscar / Mediano, Arturo / Burdio, Jose. M. et al. | 2014
- 2550
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A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating InverterJordan, Jose / Esteve, Vicente / Sanchis-Kilders, Esteban / Dede, Enrique J. / Maset, Enrique / Ejea, Juan B. / Ferreres, Agustin et al. | 2014
- 2563
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Matrix Converters - Design Challenges in the Use of Silicon Carbide JFETs in Matrix Converter ApplicationsEmpringham, L et al. | 2014
- 2563
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Design Challenges in the Use of Silicon Carbide JFETs in Matrix Converter ApplicationsEmpringham, Lee / de Lillo, Liliana / Schulz, Martin et al. | 2014
- 2574
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Realization of a Modular Indirect Matrix Converter System Using Normally Off SiC JFETsEscobar-Mejia, Andres / Stewart, Corris / Hayes, Jonathan K. / Ang, Simon S. / Balda, Juan Carlos / Talakokkula, Saikishore et al. | 2014
- 2584
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Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix ConverterSafari, Saeed / Castellazzi, Alberto / Wheeler, Patrick et al. | 2014
- 2597
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Grid-Side and Motot-Drive Applications - SiC-SIT Circuit Breakers With Controllable Interruption Voltage for 400-V DC Distribution SystemsSato, Y et al. | 2014
- 2597
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SiC-SIT Circuit Breakers With Controllable Interruption Voltage for 400-V DC Distribution SystemsSato, Yukihiko / Tanaka, Yasunori / Fukui, Akiyoshi / Yamasaki, Mikio / Ohashi, Hiromichi et al. | 2014
- 2606
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A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power DevicesWhitaker, Bret / Barkley, Adam / Cole, Zach / Passmore, Brandon / Martin, Daniel / McNutt, Ty R. / Lostetter, Alexander B. / Lee, Jae Seung / Shiozaki, Koji et al. | 2014
- 2618
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A Space Vector Modulator for the High-Switching Frequency Control of Three-Level SiC InvertersHoltz, Joachim / Holtgen, Markus / Krah, Jens Onno et al. | 2014
- 2627
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Open Access| 2014
- 2628
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IEEE Power Electronics Society Information| 2014