8-1 A TCAD Study on Mechanism and Countermeasure for Program Characteristics Degradation of 3D Semicircular Charge Trap Flash Memory (English)
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In:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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161-164
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2020
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ISBN:
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ISSN:
- Conference paper / Electronic Resource
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Title:8-1 A TCAD Study on Mechanism and Countermeasure for Program Characteristics Degradation of 3D Semicircular Charge Trap Flash Memory
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Contributors:Kariya, N. ( author ) / Tsuda, M. ( author ) / Kurusu, T. ( author ) / Kondo, M. ( author ) / Nishitani, K. ( author ) / Tokuhira, H. ( author ) / Shimokawa, J. ( author ) / Yokota, Y. ( author ) / Tanimoto, H. ( author ) / Onoue, S. ( author )
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Published in:
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Publisher:
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Publication date:2020-09-23
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Size:254433 byte
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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1-1 Forefront of Silicon Quantum ComputingItoh, Kohei M. et al. | 2020
- 1
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Characteristics of Gate-All-Around Silicon Nanowire and Nanosheet MOSFETs with Various SpacersKola, Sekhar Reddy / Li-, Yiming / Thoti, Narasimhulu et al. | 2020
- 1
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Full-Band Monte Carlo simulations of GaAs p-i-n Avalanche PhotoDiodes: What Are the Limits of Nonlocal Impact Ionization Models?Pilotto, A. / Driussi, F. / Esseni, D. / Selmi, L. / Antonelli, M. / Arfelli, F. / Biasiol, G. / Carrato, S. / Cautero, G. / De Angelis, D. et al. | 2020
- 3
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Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalismPala, Marco / Esseni, David et al. | 2020
- 7
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Future of Power Electronics from TCAD PerspectiveMa, Terry et al. | 2020
- 11
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Computics Approach toward Clarification of Atomic Reactions during Epitaxial Growth of GaNOshiyama, Atsushi / Bui, Kieu My / Boero, Mauro / Kangawa, Yoshihiro / Shiraishi, Kenji et al. | 2020
- 15
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Estimation of Phonon Mean Free Path in Small-Scaled Si Wire by Monte Carlo SimulationSuzuki, Yuhei / Fujita, Yuma / Fauziah, Khotimatul / Nogita, Takuto / Ikeda, Hiroya / Watanabe, Takanobu / Kamakura, Yoshinari et al. | 2020
- 19
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First-principles study of dopant trap level and concentration in Si(110)/a-SiO2 interfaceKang, Gijae / Jeon, Joohyun / Kim, Junsoo / Ahn, Hyoshin / Jang, Inkook / Kim, Daesin et al. | 2020
- 23
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Energy Band Calculation of Si/Si0.7 Ge0.3 Nanopillars in k➙ SpaceChuang, Min-Hui / Li, Yiming et al. | 2020
- 27
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Full Band Monte Carlo simulation of phonon transfer at interfacesLe, N.D. / Davier, B. / Dollfus, P. / Pala, M. / Bournel, A. / Saint-Martin, J. et al. | 2020
- 31
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First Principle Simulations of Electronic and Optical Properties of a Hydrogen Terminated Diamond Doped by a Molybdenum Oxide MoleculeMcGhee, Joseph / Georgiev, Vihar P. et al. | 2020
- 35
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High-sigma analysis of DRAM write and retention performance: a TCAD-to-SPICE approachAmoroso, Salvatore Maria / Lee, Jaehyun / Brown, Andrew R. / Asenov, Plamen / Lin, Xi-Wei / Moroz, Victor / Yang, Thomas et al. | 2020
- 39
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Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCADScharinger, Alexander / Manstetten, Paul / Hossinger, Andreas / Weinbub, Josef et al. | 2020
- 43
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Implant heating contribution to amorphous layer formation: a KMC approachJulliard, P.L. / Dumas, P. / Monsieur, F. / Hilario, F. / Rideau, D. / Hemeryck, A. / Cristiano, F. et al. | 2020
- 47
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Automatic Modeling of Logic Device Performance Based on Machine Learning and Explainable AIKim, Seungju / Lee, Kwangseok / Noh, Hyeon-Kyun / Shin, Youngkyu / Chang, Kyu-Baik / Jeong, Jaehoon / Baek, Sangwon / Kang, Myunggil / Cho, Keunhwi / Kim, Dong-Won et al. | 2020
- 51
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Gummel-cycle Algebraic Multigrid Preconditioning for Large-scale Device SimulationsKoshimoto, Hiroo / Ishimabushi, Hisashi / Yoo, Jaehyun / Kayama, Yasuyuki / Yamada, Satoru / Kwon, Uihui / Kim, Dae Sin et al. | 2020
- 55
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A continuous cellular automaton method with flux interpolation for two-dimensional electron gas electron transport analysisFukuda, Koichi / Hattori, Junichi / Asai, Hidehiro / Yaita, Junya / Kotani, Junji et al. | 2020
- 59
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Geometric Advection Algorithm for Process EmulationKlemenschits, Xaver / Selberherr, Siegfried / Filipovic, Lado et al. | 2020
- 63
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Performance and Leakage Analysis of Si and Ge NWFETs Using a Combined Subband BTE and WKB ApproachStanojevic, Z. / Strof, G. / Baumgartner, O. / Rzepa, G. / Karner, M. et al. | 2020
- 67
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Molecular Dynamics Modeling of the Radial Heat Transfer from Silicon NanowiresBejenari, Igor / Burenkov, Alexander / Pichler, Peter / Deretzis, Ioannis / La Magna, Antonino et al. | 2020
- 71
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Advanced simulations on laser annealing: explosive crystallization and phonon transport correctionsSciuto, Alberto / Deretzis, Ioannis / Fisicaro, Giuseppe / Lombardo, Salvatore F. / Magna, Antonino La / Grimaldi, Maria Grazia / Huet, Karim / Lespinasse, Bobby / Verstraete, Armand / Curvers, Benoit et al. | 2020
- 75
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4-4 Effect of Unit-cell Arrangement on Performance of Multi-stage-planar Cavity-free Unileg Thermoelectric Generator Using Silicon NanowiresAbe, Katsuki / Oda, Kaito / Tomita, Motohiro / Matsuki, Takeo / Matsukawa, Takashi / Watanabe, Takanobu et al. | 2020
- 83
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On the Physical Mechanism of Negative Capacitance Effect in Ferroelectric FETKobayashi, Masaharu et al. | 2020
- 89
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Undoped SiGe material calibration for numerical nanosecond laser annealing simulationsRoyet, A-S. / Dagault, L. / Kerdiles, S. / Alba, P. Acosta / Barnes, J.P / Cristiano, F. / Huet, K. et al. | 2020
- 93
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TCAD simulation for transition metal dichalcogenide channel Tunnel FETs consistent with ab-initio based NEGF calculationAsai, Hidehiro / Kuroda, Tatsuya / Fukuda, Koich / Hattori, Junichi / Ikegami, Tsutomu / Mori, Nobuya et al. | 2020
- 97
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Ab-initio Study of Magnetically Intercalated Tungsten DiselenideReyntjens, Peter D. / Tiwari, Sabyasachi / Put, Maarten L. Van de / Soree, Bart / Vandenberghe, William G. et al. | 2020
- 101
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A Study of Wiggling AA modeling and Its Impact on the Device Performance in Advanced DRAMWang, QingPeng / De Chen, Yu / Huang, Jacky / Joseph, Ervin et al. | 2020
- 105
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Reactive Force-Field Molecular Dynamics Study of the Silicon-Germanium Deposition Processes by Plasma Enhanced Chemical Vapor DepositionUene, Naoya / Mabuchi, Takuya / Zaitsu, Masaru / Yasuhara, Shigeo / Tokumasu, Takashi et al. | 2020
- 109
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Universal Feature of Trap-Density Increase in Aged MOSFET and Its Compact ModelingHerrera, Fernando Avila / Miura-Mattausch, Mitiko / Iizuka, Takahiro / Kikuchihara, Hideyuki / Mattausch, Hans Jurgen / Takatsuka, Hirotaka et al. | 2020
- 113
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TCAD Incorporation of Physical Framework to Model N and P BTI in MOSFETsTiwari, Ravi / Choudhury, Nilotpal / Samadder, Tarun / Mukhopadhyay, Subhadeep / Parihar, Narendra / Mahapatra, Souvik et al. | 2020
- 117
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6-3 Benchmarking Charge Trapping Models with NBTI, TDDS and RTN ExperimentsBhagdikar, Sharang / Mahapatra, Souvik et al. | 2020
- 121
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A TCAD Framework for Assessing NBTI Impact Under Drain Bias and Self-Heating Effects in Replacement Metal Gate (RMG) p-FinFETsSharma, Uma / Mahapatra, Souvik et al. | 2020
- 125
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5 Model analysis for effects of spatial and energy profiles of plasma process-induced defects in Si substrate on MOS device performanceHamano, Takashi / Urabe, Keiichiro / Eriguchi, Koji et al. | 2020
- 129
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Modeling and Simulation of Si IGBTsShigyo, N. / Watanabe, M. / Kakushima, K. / Hoshii, T. / Furukawa, K. / Nakajima, A. / Satoh, K. / Matsudai, T. / Saraya, T. / Takakura, T. et al. | 2020
- 137
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A technique for phase-detection auto focus under near-infrared-ray incidence in a back-side illuminated CMOS image sensor pixel with selectively grown germanium on siliconKunikiyo, Tatsuya / Sato, Hidenori / Kamino, Takeshi / Iizuka, Koji / Sonoda, Ken'ichiro / Yamashita, Tomohiro et al. | 2020
- 141
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Investigation of the relationship between current filament movement and local heat generation in IGBTs by using modified avalanche model of TCADSuwa, Takeshi et al. | 2020
- 145
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Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodesoussaiti, Y. / Rideau, D. / Manouvrier, J.R. / Quenette, V. / Mamdy, B. / Buj, C. / Grebot, J. / Wehbe-Alause, H. / Lopez, A. / Mugny, G. et al. | 2020
- 149
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Novel Full-Band Monte Carlo Device Simulator with Real-Space Treatment of the Short-Range Coulomb Interactions for Modeling 4H-SiC Power DevicesCheng, Chi-Yin / Vasileska, Dragica et al. | 2020
- 153
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Tight-binding simulation of optical gain in h-BCN for laser applicationMaki, Daisuke / Ogawa, Matsuto / Souma, Satofumi et al. | 2020
- 157
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Predictive Compact Modeling of Abnormal LDMOS Characteristics Due to Overlap-Length ModificationIizuka, Takahiro / Navarro, Dondee / Miura-Mattausch, Mitiko / Kikuchihara, Hidenori / Mattausch, Hans Jurgen / Rus, Daniel Nestor et al. | 2020
- 161
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8-1 A TCAD Study on Mechanism and Countermeasure for Program Characteristics Degradation of 3D Semicircular Charge Trap Flash MemoryKariya, N. / Tsuda, M. / Kurusu, T. / Kondo, M. / Nishitani, K. / Tokuhira, H. / Shimokawa, J. / Yokota, Y. / Tanimoto, H. / Onoue, S. et al. | 2020
- 165
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Impact of Random Phase Distribution in 3D Vertical NAND Architecture of Ferroelectric Transistors on In-Memory ComputingChoe, Gihun / Shim, Wonbo / Hur, Jae / Khan, Asif Islam / Yu, Shimeng et al. | 2020
- 169
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TCAD Modeling and Optimization of 28nm HKMG ESF3 Flash MemoryZaka, Alban / Herrmann, Tom / Richter, Ralf / Duenkel, Stefan / Jain, Ruchil et al. | 2020
- 173
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Coupling the Multi Phase-Field Method with an Electro-Thermal Solver to Simulate Phase Change Mechanisms in Ge-rich GST based PCMBayle, Raphael / Cueto, Olga / Blonkowski, Serge / Philippe, Thomas / Henry, Herve / Plapp, Mathis et al. | 2020
- 177
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Efficient partitioning of surface Green’s function: toward ab initio contact resistance study.Gandus, Guido / Lee, Youseung / Passerone, Daniele / Luisier, Mathieu et al. | 2020
- 181
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Quantum Transport in Si:P δ-Layer WiresMendez, Juan P. / Mamaluy, Denis / Gao, Xujiao / Anderson, Evan M. / Campbell, DeAnna M. / Ivie, Jeffrey A. / Lu, Tzu-Ming / Schmucker, Scott W. / Misra, Shashank et al. | 2020
- 185
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Analytical Formulae for the Surface Green’s Functions of Graphene and 1T’ MoS2 NanoribbonsKosina, Hans / Seiler, Heribert / Sverdlov, Viktor et al. | 2020
- 189
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Numerical Solution of the Constrained Wigner EquationKosik, Robert / Cervenka, Johann / Kosina, Hans et al. | 2020
- 193
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Calibrated Si Mobility and Incomplete Ionization Models with Field Dependent Ionization Energy for Cryogenic SimulationsWong, Hiu Yung et al. | 2020
- 197
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Monte Carlo Simulation of a Three-Terminal RRAM with Applications to Neuromorphic ComputingBalasingam, Akhilesh / Levy, Akash / Li, Haitong / Raina, Priyanka et al. | 2020
- 201
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Fully Analog ReRAM Neuromorphic Circuit Optimization using DTCO Simulation FrameworkNguyen, Anh / Nguyen, Hoi / Venimadhavan, Sruthi / Venkattraman, Ayyaswamy / Parent, David / Wong, Hiu Yung et al. | 2020
- 205
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Effect of Shape Deformation by Edge Roughness in Spin-Orbit Torque Magnetoresistive Random-Access MemoryByun, Jihun / Kang, Doo Hyung / Shin, Mincheol et al. | 2020
- 209
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Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport ModelingFiorentini, Simone / Ender, Johannes / Mohamedou, Mohamed / Orio, Roberto / Selberherr, Siegfried / Goes, Wolfgang / Sverdlov, Viktor et al. | 2020
- 213
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Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM CellsEnder, Johannes / Mohamedou, Mohamed / Fiorentini, Simone / Orio, Roberto / Selberherr, Siegfried / Goes, Wolfgang / Sverdlov, Viktor et al. | 2020
- 217
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Properties of Conductive Oxygen Vacancies and Compact Modeling of IV Characteristics in HfO2 Resistive Random-Access-MemoriesPark, Junsung / Kim, Min-Jae / Jang, Jae-Hyung / Hong, Sung-Min et al. | 2020
- 221
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MOS-like approach for compact modeling of High-Electron-Mobility TransistorVaysset, Adrien / Martinie, Sebastien / Triozon, Francois / Rozeau, Olivier / Jaud, Marie-Anne / Escoffier, Rene / Poiroux, Thierry et al. | 2020
- 225
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Compact modeling of gate leakage phenomenon in GaN HEMTsLi, Kexin / Yagyu, Eiji / Saito, Hisashi / Teo, Koon Hoo / Rakheja, Shaloo et al. | 2020
- 229
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Effect of Atomic Interface on Tunnel Barrier in Ferroelectric HfO2 Tunnel JunctionsSeo, Junbeom / Shin, Mincheol et al. | 2020
- 233
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Surge Current Capability in lateral AlGaN/GaN Hybrid Anode Diodes with p-GaN/Schottky AnodeAtmaca, Gokhan / Jaud, Marie-Anne / Jerome, Julien Buckley / Yvon, Arnaud / Collard, Emmanuel et al. | 2020
- 237
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Dynamic Simulation of Write ‘1’ Operation in the Bi-stable 1-Transistor SRAM CellDutta, Tapas / Adamu-Lema, Fikru / Asenov, Asen / Widjaja, Yuniarto / Nebesnyi, Valerii et al. | 2020
- 241
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Simulation of gated GaAs-AlGaAs resonant tunneling diodes for tunable terahertz communication applicationsGeorgiev, V. P. / Sengupta, A. / Maciazek, P. / Badami, O. / Medina-Bailon, C. / Dutta, T. / Adamu-Lema, F. / Asenov, A. et al. | 2020
- 245
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Theoretical Study of Double-Heterojunction AlGaN/GaN/InGaN/δ-doped HEMTs for Improved Transconductance LinearityYu, Tsung-Hsing et al. | 2020
- 249
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Nanoscale FET: How To Make Atomistic Simulation Versatile, Predictive, and Fast at 5nm Node and BelowBlaise, Philippe / Kapoor, Udita / Townsend, Mark / Guichard, Eric / Charles, James / Lemus, Daniel / Kubis, Tillmann et al. | 2020
- 253
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TCAD-Assisted MultiPhysics Modeling & Simulation for Accelerating Silicon Quantum Dot Qubit DesignMohiyaddin, F. A. / Simion, G. / Stuyck, N. I. Dumoulin / Li, R. / Elsayed, A. / Shehata, M. / Kubicek, S. / Godfrin, C. / Chan, B. T. / Jussot, J. et al. | 2020
- 257
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Physics-augmented Neural Compact Model for Emerging Device TechnologiesKim, Yohan / Myung, Sanghoon / Ryu, Jisu / Jeong, Changwook / Kim, Dae Sin et al. | 2020
- 261
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A Modeling Study on Performance of a CNOT Gate Devices based on Electrode-driven Si DQD StructuresRyu, Hoon / Kang, Ji-Hoon et al. | 2020
- 265
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Simulation and Evaluation of Plasmonic CircuitsFukuda, Mitsuo / Ishikawa, Yasuhiko et al. | 2020
- 269
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Numerical study of surface chemical reactions in 2D-FET based pH sensorsToral-Lopez, A. / Marin, E.G. / Cuesta, J. / Ruiz, F.G. / Pasadas, F. / Medina-Rull, A. / Godoy, A. et al. | 2020
- 273
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A Combined First Principles and Kinetic Monte Carlo study of Polyoxometalate based Molecular Memory DevicesLapham, P. / Badami, O. / Medina-Bailon, C. / Adamu-Lema, F. / Dutta, T. / Nagy, D. / Georgiev, V. / Asenov, A. et al. | 2020
- 277
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Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing DevicesGao, Xujiao / Tracy, Lisa A. / Anderson, Evan M. / Campbell, DeAnna M. / Ivie, Jeffrey A. / Lu, Tzu-Ming / Mamaluy, Denis / Schmucker, Scott W. / Misra, Shashank et al. | 2020
- 281
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Effects of the Dielectric Environment on Electronic Transport in Monolayer MoS2: Screening and Remote Phonon ScatteringVan de Put, Maarten L. / Gaddemane, Gautam / Gopalan, Sanjay / Fischetti, Massimo V. et al. | 2020
- 285
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Impact of Schottky Barrier on the Performance of Two-Dimensional Material TransistorsSu, Sheng-Kai / Cai, Jin / Chen, Edward / Li, Lain-Jong / Philip Wong, H.-S. et al. | 2020
- 289
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AC NEGF Simulation of Nanosheet MOSFETsHong, Sung-Min / Ahn, Phil-Hun et al. | 2020
- 293
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Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS)Medina-Bailon, Cristina / Badami, Oves / Carrillo-Nunez, Hamilton / Dutta, Tapas / Nagy, Daniel / Adamu-Lema, Fikru / Georgiev, Vihar P. / Asenov, Asen et al. | 2020
- 297
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Electrostatic Potential Profile Generator for Two-Dimensional Semiconductor DevicesHan, Seung-Cheol / Choi, Jonghyun / Hong, Sung-Min et al. | 2020
- 301
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Agile Pathfinding Technology Prototyping: the Hunt for Directional CorrectnessChanemougame, Daniel / Smith, Jeffrey / Gutwin, Paul / Byrns, Brandon / Liebmann, Lars et al. | 2020
- 307
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Self-Aligned Single Diffusion Break Technology Optimization Through Material Engineering for Advanced CMOS NodesPal, Ashish / Bazizi, El Mehdi / Jiang, Liu / Saremi, Mehdi / Alexander, Blessy / Ayyagari-Sangamalli, Buvna et al. | 2020
- 311
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L-UTSOI: A compact model for low-power analog and digital applications in FDSOI technologyMartinie, Sebastien / Rozeau, Olivier / Poiroux, Thierry / Scheer, Patrick / Ghouli, Salim El / Kang, Mihyun / Juge, Andre / Lee, Harrison et al. | 2020
- 315
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Electromigration Model for Platinum HotplatesFilipovic, Lado et al. | 2020
- 319
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Compact Modeling of Radiation Effects in Thin-Layer SOI-MOSFETsMiura-Mattausch, Mitiko / Kikuchihara, Hideyuki / Baba, Shunsuke / Navarro, Dondee / Iizuka, Takahiro / Sakamoto, Keita / Mattausch, Hans Juergen et al. | 2020
- 323
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Complementary FET Device and Circuit Level Evaluation Using Fin-Based and Sheet-Based Configurations Targeting 3nm Node and BeyondJiang, Liu / Pal, Ashish / Bazizi, El Mehdi / Saremi, Mehdi / Ren, He / Alexander, Blessy / Ayyagari-Sangamalli, Buvna et al. | 2020
- 327
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Via Size Optimization for Optimum Circuit Performance at 3 nm nodeMittal, Sushant / Pal, Ashish / Saremi, Mehdi / Bazizi, El Mehdi / Alexander, Blessy / Ayyagari, Buvna et al. | 2020
- 331
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Time-Resolved Mode Space based Quantum-Liouville type Equations applied onto DGFETsSchulz, Lukas / Schulz, Dirk et al. | 2020
- 335
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Power Device Degradation Estimation by Machine Learning of Gate WaveformsYamasaki, Hiromu / Miyazaki, Koutaro / Lo, Yang / Mahfuzul Islam, A. K. M. / Hata, Katsuhiro / Sakurai, Takayasu / Takamiya, Makoto et al. | 2020
- 339
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Machine Learning Prediction of Defect Formation Energies in a-SiO2Milardovich, Diego / Jech, Markus / Waldhoer, Dominic / Waltl, Michael / Grasser, Tibor et al. | 2020
- 343
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Novel Optimization Method using Machine-learning for Device and Process Competitiveness of BCD ProcessKim, Junhyeok / Yoo, Jae-Hyun / Jung, Jaehyun / Kim, Kwangtea / Bae, Jaehyun / Kim, Yoon-suk / Kwon, OhKyum / Kwon, UiHui / Kim, DaeSin et al. | 2020
- 347
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Real-Time TCAD: a new paradigm for TCAD in the artificial intelligence eraMyung, Sanghoon / Kim, Jinwoo / Jeon, Yongwoo / Jang, Wonik / Huh, In / Kim, Jaemin / Han, Songyi / Baek, Kang-hyun / Ryu, Jisu / Kim, Yoon-Suk et al. | 2020
- 351
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Application of Noise to Avoid Overfitting in TCAD Augmented Machine LearningRaju, Sophia Susan / Wang, Boyan / Mehta, Kashyap / Xiao, Ming / Zhang, Yuhao / Wong, Hiu-Yung et al. | 2020
- 355
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Automatic Device Model Parameter Extractions via Hybrid Intelligent MethodologyLiu, Cheng-Che / Li, Yiming / Yang, Ya-Shu / Chen, Chieh-Yang / Chuang, Min-Hui et al. | 2020
- 359
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Physics-Informed Graph Neural Network for Circuit Compact Model DevelopmentGao, Xujiao / Huang, Andy / Trask, Nathaniel / Reza, Shahed et al. | 2020
- 363
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Theoretical study of electronic transport in monolayer SnSeGopalan, Sanjay / Gaddemane, Gautam / Van de Put, Maarten L. / Fischetti, Massimo V. et al. | 2020
- 367
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Transient simulation of graphene FET gated by electrolyte mediumArihori, Koki / Ogawa, Matsuto / Souma, Satofumi / Sato-Iwanaga, Junko / Suzuki, Masa-aki et al. | 2020
- 371
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Quantum Transport Simulations of Phosphorene Nanoribbon MOSFETs: Effects of Metal Contacts, Ballisticity and Series ResistancePoljak, Mirko / Matic, Mislav et al. | 2020
- 375
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High-Performance Metal-Ferroeletric-Semiconductor Nanosheet Line Tunneling Field Effect Transistors with Strained SiGeThoti, Narasimhulu / Li, Yiming / Kola, Sekhar Reddy / Samukawa, Seiji et al. | 2020
- 379
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A First-principles Study on the Strain-induced Localized Electronic Properties of Dumbbell-shape Graphene Nanoribbon for Highly Sensitive Strain SensorsZhang, Qinqiang / Suzuki, Ken / Miura, Hideo et al. | 2020
- 383
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Multiband Phase Space Operator for Narrow Bandgap Semiconductor DevicesSchulz, Lukas / Schulz, Dirk et al. | 2020
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