Regrown ohmic contacts to InxGa1−xAs approaching the quantum conductivity limit (English)
- New search for: Law, J. J. M.
- New search for: Carter, A. D.
- New search for: Lee, S.
- New search for: Gossard, A. C.
- New search for: Rodwell, M. J. W.
- New search for: Law, J. J. M.
- New search for: Carter, A. D.
- New search for: Lee, S.
- New search for: Gossard, A. C.
- New search for: Rodwell, M. J. W.
In:
70th Device Research Conference
;
199-200
;
2012
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ISSN:
- Conference paper / Electronic Resource
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Title:Regrown ohmic contacts to InxGa1−xAs approaching the quantum conductivity limit
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Contributors:Law, J. J. M. ( author ) / Carter, A. D. ( author ) / Lee, S. ( author ) / Gossard, A. C. ( author ) / Rodwell, M. J. W. ( author )
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Published in:70th Device Research Conference ; 199-200
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Publisher:
- New search for: IEEE
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Publication date:2012-06-01
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Size:472855 byte
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ISBN:
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Direct measurement of Dirac point and Fermi level at graphene/oxide interface by internal photoemissionXu, Kun / Zeng, Caifu / Zhang, Qin / Ye, Peide / Wang, Kang / Richter, Curt A. / Gundlach, David / Nguyen, Nhan V. et al. | 2012
- 1
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Resonant-body silicon nanowire field effect transistor without junctionsBartsch, Sebastian T. / Dupre, Cecilia / Ollier, Eric / Ionescu, Adrian M. et al. | 2012
- 1
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Plenary session [breaker page]| 2012
- 1
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III–V 4D transistorsGu, J. J. / Wang, X. W. / Shao, J. / Neal, A. T. / Manfra, M. J. / Gordon, R. G. / Ye, P. D. et al. | 2012
- 1
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Monolithically integrated E/D-mode InAlN HEMTs with ƒt/ƒmax > 200/220 GHzSong, Bo / Sensale-Rodriguez, Berardi / Wang, Ronghua / Ketterson, Andrew / Schuette, Michael / Beam, Edward / Saunier, Paul / Gao, Xiang / Guo, Shiping / Fay, Patrick et al. | 2012
- 1
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70th Device Research Conference Digest [front matter]| 2012
- 1
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Late news [breaker page]| 2012
- 3
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Mapping a path to the beyond-CMOS technology for computationYoung, Ian A. et al. | 2012
- 7
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Solid-state electronics and single-molecule biophysicsShepard, Ken et al. | 2012
- 9
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Advanced device technologies for defense systemsZolper, John C. et al. | 2012
- 13
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Mems, sensors and harvestors [breaker page]| 2012
- 15
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High performance miniaturized NEMS sensors Toward co-integration with CMOS?Ernst, T. / Arcamone, J. / Philippe, J. / Martin, O. / Ollier, E. / Batude, P. / Gouttenoire, V. / Marcoux, C. / Ricoul, F. / Dupre, C. et al. | 2012
- 17
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Silicon monolithic MEMS + photonic systemsBhave, Sunil A. et al. | 2012
- 19
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Highly sensitive III–V nitride based piezoresistive microcantilever using embedded AlGaN/GaN HFET as ultrasonic detectorTalukdar, Abdul / Qazi, Muhammad / Koley, Goutam et al. | 2012
- 21
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Nanostructured thermoelectric energy conversion and refrigeration devicesShakouri, Ali et al. | 2012
- 23
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Piezotronics and piezo-phototronicsWang, Zhong Lin et al. | 2012
- 24a
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Alternative graphene devices: beyond field effect transistorsLemme, M.C. / Vaziri, S. / Smith, A.D. / Ostling, M. et al. | 2012
- 25
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Alternate transistor concept [breaker page]| 2012
- 27
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Novel double layer graphene transistors-bilayer pseudospin FETs and 2D-2D tunnel FETsBanerjee, S.K. / Register, L.F. / Tutuc, E. / Reddy, D. / Kim, S. / Basu, D. / Corbet, C. / Colombo, L. / Carpenter, G. / MacDonald, A.H. et al. | 2012
- 29
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Effect of interfacial phonon-plasmon modes on electrical transport in supported grapheneOng, Zhun-Yong / Fischetti, Massimo V. et al. | 2012
- 31
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Possible applications of topological insulator thin films for tunnel FETsChang, Jiwon / Register, Leonard F. / Banerjee, Sanjay K. et al. | 2012
- 33
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SymFET: A proposed symmetric graphene tunneling field effect transistorZhao, Pei / Feenstra, R. M. / Gu, Gong / Jena, Debdeep et al. | 2012
- 35
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Hybrid straintronics and spintronics: An ultra energy-efficient paradigm for logic and memoryBandyopadhyay, Supriyo / Atulasimha, Jayasimha et al. | 2012
- 37
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Graphene and topological insulator based transistors: Beyond computing applicationsChen, Yong P. et al. | 2012
- 39
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Poster session [breaker page]| 2012
- 45
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Al2O3/InSb/Si quantum well MOSFETs having an ultra-thin InSb layerMaezawa, Koichi / Ito, Taihei / Kadoda, Azusa / Nakayama, Koji / Yasui, Yuichiro / Mori, Masayuki / Miyazaki, Eiji / Mizutani, Takashi et al. | 2012
- 47
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Ultra-sensitive magnetoelectric sensor with high saturation fieldLei Mei, / Zhao Fang, / Feng Li, / Datta, S. / Zhang, Q. M. et al. | 2012
- 49
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Study of SiOx-based complementary resistive switching memristorYao-Feng Chang, / Yen-Ting Chen, / Fei Xue, / Yanzhen Wang, / Fei Zhou, / Fowler, Burt / Lee, Jack C. et al. | 2012
- 51
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Illumination instability analysis of ZnO thin film transistors with HfO2 gate dielectricsSiddiqui, J.J. / Phillips, J.D. / Leedy, K. / Bayraktaroglu, B. et al. | 2012
- 53
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1.4 kV breakdown voltage for MOCVD grown AlGaN/GaN HEMTs on Si substrateSelvaraj, S. Lawrence / Watanabe, Arata / Wakejima, Akio / Egawa, Takashi et al. | 2012
- 55
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Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in OFF currentGupta, Sumeet Kumar / Kulkarni, Jaydeep P. / Datta, Suman / Roy, Kaushik et al. | 2012
- 57
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Exclusive electrical determination of high-resistance grain-boundaries in poly-grapheneChen, Ruiyi / Das, Suprem R. / Jeong, Changwook / Janes, David B. / Alam, Muhammad A. et al. | 2012
- 59
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Improved OFF-state breakdown voltage in AlGaN/GaN HEMTs grown on 150-mm diameter silicon-on-insulator (SOI) substrateArulkumaran, S. / Lin, V. K. X. / Dolmanan, S. B. / Ng, G.I. / Vicknesh, S. / Tan, J. P. Y. / Teo, S. L. / Kumar, M. Krishna / Tripathy, S. et al. | 2012
- 61
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Improved dual-carrier high gain impact ionization engineered avalanche photodiodeHuang, Jun / Banerjee, Koushik / Ghosh, Siddhartha / Hayat, Majeed M. et al. | 2012
- 63
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Enhanced tunneling current in 1d-1dEdge overlapped TFET'sAgarwal, Sapan / Yablonovitch, Eli et al. | 2012
- 65
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Metal contacts to MoS2: A two-dimensional semiconductorNeal, Adam T. / Liu, Han / Gu, J.J. / Ye, P.D. et al. | 2012
- 67
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Balancing stress & dipolar interactions for fast, low power, reliable switching in multiferroic logicMunira, Kamaram / Nadri, Souheil / Forgues, Mark / Ghosh, Avik W. et al. | 2012
- 69
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Double slot high-k waveguide grating couplers for silicon photonicsNaiini, Maziar M. / Henkel, Christoph / Malm, Gunnar B. / Ostling, Mikael et al. | 2012
- 71
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Self-aligned metal S/D GaSb p-MOSFETs using Ni-GaSb alloysZota, C. B. / Kim, S. H. / Asakura, Y. / Takenaka, M. / Takagi, S. et al. | 2012
- 73
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Bilayer graphene vertical tunneling field effect transistorReddy, Dharmendar / Register, Leonard F. / Banerjee, Sanjay K. et al. | 2012
- 75
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440 V AlSiN-passivated AlGaN/GaN high electron mobility transistor with 40 GHz bandwidthHarvard, Ekaterina / Shealy, James R. et al. | 2012
- 77
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Analysis of terahertz zero bias detectors by using a triple-barrier resonant tunneling diode integrated with a self-complementary bow-tie antennaSuhara, Michihiko / Takahagi, Satoshi / Asakawa, Kiyoto / Okazaki, Toshimichi / Nakamura, Masahito / Yamashita, Shin / Itagaki, Yosuke / Saito, Mitsufumi / Tchegho, Anselme / Keller, Gregor et al. | 2012
- 79
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An InAs nanowire spin transistor with subthreshold slope of 20mV/decYoh, Kanji / Cui, Z. / Konishi, K. / Ohno, M. / Blekker, K. / Prost, W. / Tegude, F.-J. / Harmand, J.-C. et al. | 2012
- 81
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Understanding dual-gate polymer field-effect transistorsHa, Tae-Jun / Sonar, Prashant / Dodabalapur, Ananth et al. | 2012
- 83
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Fundamental limitations of conventional-FET biosensors: Quantum-mechanical-tunneling to the rescueSarkar, Deblina / Banerjee, Kaustav et al. | 2012
- 85
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Can quasi-saturation in the output characteristics of short-channel graphene field-effect transistors be engineered?Ganapathi, Kartik / Lundstrom, Mark / Salahuddin, Sayeef et al. | 2012
- 87
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Phonon limited transport in graphene pseudospintronic devicesEstrada, Z. J. / Dellabetta, B. / Ravaioli, U. / Gilbert, M. J. et al. | 2012
- 89
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Resistive switching in aluminum nitrideMarinella, M.J. / Stevens, J.E. / Longoria, E.M. / Kotula, P.G. et al. | 2012
- 91
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Limits of detection for silicon nanowire BioFETsRajan, Nitin K. / Duan, Xuexin / Vacic, Aleksandar / Routenberg, David A. / Reed, Mark A. et al. | 2012
- 93
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Hole-blocking TiO2/silicon heterojunction for silicon photovoltaicsAvasthi, Sushobhan / McClain, Will / Schwartz, Jeffrey / Sturm, James C. et al. | 2012
- 95
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Recess integration of platelet laser diodes with waveguides on siliconFamenini, Shaya / Fonstad, Clifton G. et al. | 2012
- 97
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NLSTT-MRAM: Robust spin transfer torque MRAM using non-local spin injection for writeSharad, Mrigank / Panagopoulos, Georgios / Augustine, Charles / Roy, Kaushik et al. | 2012
- 99
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All Spin Logic device as a compact artificial neuronSarkar, Angik / Behin-Aein, Behtash / Srinivasan, Srikant / Datta, Supriyo et al. | 2012
- 101
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Experimental demonstration of “Cold” low contact resistivity ohmic contacts on moderately doped n-Ge with in-situ atomic hydrogen cleanAgrawal, Ashish / Park, Jeongwon / Mohata, Dheeraj / Ahmed, Khaled / Datta, Suman et al. | 2012
- 103
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Mobility and scattering mechanisms in buried InGaSb quantum well channels integrated with in-situ MBE grown gate oxideMadisetti, S. / Nagaiah, P. / Chidambaram, T. / Tokranov, V. / Yakimov, M. / Oktyabrsky, S. et al. | 2012
- 105
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Dielectric thickness dependence of quantum capacitance in graphene varactors with local metal back gatesEbrish, M. A. / Koester, S. J. et al. | 2012
- 107
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Negative differential resistance in short-channel graphene FETs: Semianalytical model and simulationsGrassi, Roberto / Low, Tony / Gnudi, Antonio / Baccarani, Giorgio et al. | 2012
- 109
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Drain-induced-barrier lowering and subthreshold swing fluctuations in 16-nm-gate bulk FinFET devices induced by random discrete dopantsSu, Hsin-Wen / Li, Yiming / Chen, Yu-Yu / Chen, Chieh-Yang / Chang, Han-Tung et al. | 2012
- 111
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THz detector based on proximity effect of topological insulatorLi, Xiaodong / Semenov, Yuriy G. / Kim, Ki Wook et al. | 2012
- 113
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Transverse-field bandgap modulation on graphene nanoribbon transistors by double-self-aligned spacersTung, Lieh-Ting / Mateus, M. Veronica / Kan, Edwin C. et al. | 2012
- 115
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Epitaxial Si punch-through based selector for bipolar RRAMBafna, P. / Karkare, P. / Srinivasan, S / Chopra, S. / Lashkare, S. / Kim, Y. / Srinivasan, S. / Kuppurao, S. / Lodha, S. / Ganguly, U. et al. | 2012
- 117
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A figure of merit for oscillator-based thin-film circuits on plastic for high-performance signaling, energy harvesting and driving of actuation circuitsRieutort-Louis, Warren / Huang, Liechao / Hu, Yingzhe / Sanz-Robinson, Josue / Wagner, Sigurd / Sturm, James C. / Verma, Naveen et al. | 2012
- 119
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Short-channel enhancement-mode planar GaAs nanowire HEMTs through a bottom-up methodXin, Miao / Chen, Zhang / Xiuling, Li et al. | 2012
- 121
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Electric field driven domain wall transfer in hybrid structuresDuan, Xiaopeng / Stephanovich, Vladimir / Semenov, Yuriy G. / Fangohr, Hans / Franchin, Matteo / Kim, Ki Wook et al. | 2012
- 123
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Comparison of graphene nanoribbons with Cu and Al interconnectsWang, Ning / English, Chris D. / Pop, Eric et al. | 2012
- 125
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Electrical control of nuclear-spin-induced Hall voltage in an inverted InAs heterostructureIshikura, Tomotsugy / Cui, Zhixin / Yoh, Kanji et al. | 2012
- 127
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Epitaxialy defined (ED) FinFET: to reduce VT variability and enable multiple VTMittal, S. / Gupta, S. / Nainani, A. / Abraham, M.C. / Schuegraf, K. / Lodha, S. / Ganguly, U. et al. | 2012
- 129
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Power reduction in nanomagnetic logic clocking through high permeability dielectricsLi, Peng / Csaba, Gyorgy / Sankar, Vijay K. / Sharon Hu, X. / Niemier, Michael / Porod, Wolfgang / Bernstein, Gary H. et al. | 2012
- 131
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New tunnel-FET architecture with enhanced ION and improved Miller Effect for energy efficient switchingBiswas, Arnab / Alper, Cem / De Michielis, Luca / Ionescu, Adrian M. et al. | 2012
- 133
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Switching dynamics in ferroelectric-charge hybrid nonvolatile memoryAuluck, Kshitij / Rajwade, Shantanu / Kan, Edwin C. et al. | 2012
- 135
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Frequency dependence of amorphous silicon Schottky diodes for Large-Area rectification applicationsSanz-Robinson, Josue / Rieutort-Louis, Warren / Verma, Naveen / Wagner, Sigurd / Sturm, James C. et al. | 2012
- 137
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Reliability improvement achieved by N2O radical treatment for AlGaN/GaN heterojunction field-effect transistorsHu, Cheng-Yu / Hashizume, Tamotsu et al. | 2012
- 139
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Exploring variability and reliability of multi-level STT-MRAM cellsPanagopoulos, Georgios / Augustine, Charles / Fong, Xuanyao / Roy, Kaushik et al. | 2012
- 141
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Comparative study of LEDs conformally overgrown on multi-facet GaN NWs vs. conventional c-plane LEDsHosalli, A.M. / Frajtag, P. / Van Den Broeck, D. M. / Paskova, T. / El-Masry, N.A. / Bedair, S.M. et al. | 2012
- 143
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Inkjet-printed SWCNT films for stretchable electrode and strain sensor applicationsKim, Taehoon / Byun, Junghwan / Song, Hyunsoo / Hong, Yongtaek et al. | 2012
- 145
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Comparison of instantaneous crystallization and metastable models in phase change memory cellsFaraclas, Azer / Williams, Nicholas / Bakan, Gokhan / Gokirmak, Ali / Silva, Helena et al. | 2012
- 147
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A surface-potential based compact model for GaN HEMTs incorporating polarization chargesJana, Raj / Jena, Debdeep et al. | 2012
- 149
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Wide bandgap/high speed devices| 2012
- 151
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N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒmaxDenninghoff, D. / Lu, J. / Laurent, M. / Ahmadi, E. / Keller, S. / Mishra, U. K. et al. | 2012
- 153
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Ultra-thin Body GaN-on-insulator nFETs and pFETs: Towards III-nitride complementary logicLi, Guowang / Wang, Ronghua / Verma, Jai / Xing, Huili / Jena, Debdeep et al. | 2012
- 155
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Improved GaN-based HEMT performance by nanocrystalline diamond cappingAnderson, T.J. / Hobart, K.D. / Tadjer, M.J. / Feygelson, T.I. / Imhoff, E.A. / Meyer, D.J. / Katzer, D.S. / Hite, J.K. / Kub, F.J. / Pate, B.B. et al. | 2012
- 157
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Record low tunnel junction specific resistivity (< 3×10−4 Ωcm2) in GaN inter-band tunnel junctionsKrishnamoorthy, Sriram / Akyol, Fatih / Yang, Jing / Park, Pil Sung / Myers, Roberto C / Rajan, Siddharth et al. | 2012
- 159
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Ga2O3 Schottky barrier diodes fabricated on single-crystal β-Ga2O3 substratesSasaki, Kohei / Higashiwaki, Masataka / Kuramata, Akito / Masui, Takekazu / Yamakoshi, Shigenobu et al. | 2012
- 161
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Quaternary nitride enhancement mode HFET with 260 mS/mm and a threshold voltage of +0.5 VKetteniss, Nico / Reuters, Benjamin / Hollander, Bernhard / Hahn, Herwig / Kalisch, Holger / Vescan, Andrei et al. | 2012
- 163
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Methods for attaining high interband tunneling current in III-NitridesGrowden, Tyler A. / Krishnamoorthy, Sriram / Nath, Digbijoy N. / Ramesh, Anisha / Rajan, Siddharth / Berger, Paul R. et al. | 2012
- 165
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Experimental demonstration of a wafer-bonded heterostructure based unipolar transistor with In0.53Ga0.47as channel and III-N drainLal, Shalini / Jing Lu, / Thibeault, Brian / Denbaars, Steven P. / Mishra, Umesh K. et al. | 2012
- 167
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Electrical evidence of disorder at the SiO2/4H-SiC MOS interface and its effect on electron transportSwandono, S. / Penumatcha, A. / Cooper, J. A. et al. | 2012
- 169
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Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detectionBoubanga-Tombet, Stephane / Tanimoto, Yudai / Watanabe, Takayuki / Suemitsu, Tetsuya / Yuye, Wang / Minamide, Hiroaki / Ito, Hiromasa / Popov, Vyacheslav / Otsuji, T. et al. | 2012
- 171
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1/2-dimensional FETs [breaker page]| 2012
- 173
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Role of screening, heating, and dielectrics on high-field transport in grapheneSerov, Andrey Y. / Zhun-Yong Ong, / Dorgan, Vincent E. / Pop, Eric et al. | 2012
- 175
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Graphene field-effect transistors with self-aligned spin-on-doping of source/drain access regionsMovva, Hema C. P. / Ramon, Michael E. / Corbet, Chris M. / Chowdhury, Fahad Sk. / Carpenter, Gary / Tutuc, Emanuel / Banerjee, Sanjay K. et al. | 2012
- 177
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High performance, large area graphene transistors on quasi-free-standing graphene using synthetic hexagonal boron nitride gate dielectricsHollander, Matthew J. / Agrawal, Ashish / Bresnehan, Michael S. / LaBella, Michael / Trumbull, Kathleen A. / Cavalero, Randal / Datta, Suman / Robinson, Joshua A. et al. | 2012
- 179
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MoS2-based devices and circuitsRadisavljevic, B. / Krasnozhon, D. / Whitwick, M.B. / Kis, A. et al. | 2012
- 181
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Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristicsMadan, Himanshu / Hollander, Matthew J. / Robinson, Joshua A. / Datta, Suman et al. | 2012
- 183
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Pulsed nanosecond characterization of graphene transistorsCarrion, Enrique / Malik, Akshay / Behnam, Ashkan / Islam, Sharnali / Feng Xiong, / Pop, Eric et al. | 2012
- 185
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Graphene nanomesh contacts and its transport propertiesTao Chu, / Zhihong Chen, et al. | 2012
- 187
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First demonstration of two-dimensional WS2 transistors exhibiting 105 room temperature modulation and ambipolar behaviorWan Sik Hwang, / Remskar, Maja / Yan, Rusen / Protasenko, Vladimir / Tahy, Kristof / Soo Doo Chae, / Huili Xing, / Seabaugh, Alan / Jena, Debdeep et al. | 2012
- 189
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Low-frequency noise in contact and channel regions of ambipolar InAs nanowire transistorsDelker, Collin J. / Yunlong Zi, / Chen Yang, / Janes, David B. et al. | 2012
- 191
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MOSFETs/FETs [breaker page]| 2012
- 193
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High performance III–V FETs for low power CMOS applicationsRadosavljevic, M. et al. | 2012
- 195
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Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 VPersson, Karl-Magnus / Berg, Martin / Borg, Mattias / Jun Wu, / Sjoland, Henrik / Lind, Erik / Wernersson, Lars-Erik et al. | 2012
- 197
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Possible observation of ballistic contact resistance in wide Si MOSFETsMajumdar, Amlan / Antoniadis, Dimitri A. et al. | 2012
- 199
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Regrown ohmic contacts to InxGa1−xAs approaching the quantum conductivity limitLaw, J. J. M. / Carter, A. D. / Lee, S. / Gossard, A. C. / Rodwell, M. J. W. et al. | 2012
- 201
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Simulation study of nanowire tunnel FETsSchenk, Andreas / Rhyner, Reto / Luisier, Mathieu / Bessire, Cedric et al. | 2012
- 203
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Flicker noise characterization and analytical modeling of homo and hetero-junction III–V tunnel FETsBijesh, R. / Mohata, D. K. / Liu, H. / Datta, S. et al. | 2012
- 205
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High current density InAsSb/GaSb tunnel field effect transistorsDey, Anil W. / Borg, B. Mattias / Ganjipour, Bahram / Ek, Martin / Dick, Kimberly A. / Lind, Erik / Nilsson, Peter / Thelander, Claes / Wernersson, Lars-Erik et al. | 2012
- 207
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Gate-first implant-free InGaAs n-MOSFETs with sub-nm EOT and CMOS-compatible process suitable for VLSICzornomaz, L. / El Kazzi, M. / Caimi, D. / Rossel, C. / Uccelli, E. / Sousa, M. / Marchiori, C. / Richter, M. / Siegwart, H. / Fompeyrine, J. et al. | 2012
- 209
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Spin/memory devices [breaker page]| 2012
- 211
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Ultrafast spin torque memory based on magnetic tunnel junctions with combined in-plane and perpendicular polarizersKrivorotov, I. N. / Rowlands, G. E. / Rahman, T. / Katine, J. A. / Langer, J. / Lyle, A. / Zhao, H. / Alzate, J. G. / Kovalev, A. A. / Tserkovnyak, Y. et al. | 2012
- 213
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NanoMagnet logicPorod, Wolfgang / Li, Peng / Shah, Faisal / Siddiq, Mohammad / Varga, Edit / Csaba, Gyorgy / Sankar, Vijay / Bernstein, Gary H. / Hu, X. Sharon / Niemier, Michael et al. | 2012
- 215
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Nanowire phase change memory with carbon nanotube electrodesXiong, Feng / Bae, Myung-Ho / Dai, Yuan / Liao, Albert D. / Behnam, Ashkan / Carrion, Enrique / Hong, Sungduk / Ielmini, Daniele / Pop, Eric et al. | 2012
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A very reliable multilevel YSZ resistive switching memoryPan, Feng / Jang, Jaewon / Subramanian, Vivek et al. | 2012
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A comprehensive model for crossbar memory arraysChen, An / Krivokapic, Zoran / Lin, Ming-Ren et al. | 2012
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Spin neuron for ultra low power computational hardwareSharad, Mrigank / Panagopoulos, Georgios / Roy, Kaushik et al. | 2012
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- 227
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Transistor modeling [breaker page]| 2012
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Dissipative quantum transport in nanoscale transistorsGuo, Jing et al. | 2012
- 231
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- 233
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Exploration of vertical MOSFET and tunnel FET device architecture for Sub 10nm node applicationsLiu, H. / Mohata, D. K. / Nidhi, A. / Saripalli, V. / Narayanan, V. / Datta, S. et al. | 2012
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Organic thin-film transistors for flexible displays and circuitsKlauk, Hagen et al. | 2012
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Low-voltage ZnO double-gate thin film transistor circuitsLi, Yuanyuan V. / Ramirez, J. Israel / Sun, Kaige G. / Jackson, Thomas N. et al. | 2012
- 241
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High performance solution-processed thin-film transistors based on In2O3 nanocrystalsSwisher, Sarah L. / Volkman, Steve / Braam, Kyle / Jang, Jaewon / Subramanian, Vivek et al. | 2012
- 243
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Characterization and modeling of metal-insulator transition (MIT) based tunnel junctionsFreeman, E. / Kar, A. / Shukla, N. / Misra, R. / Engel-Herbert, R. / Schlom, D. / Gopalan, V. / Rabe, K. / Datta, S. et al. | 2012
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Two-stage model for lifetime prediction of highly stable amorphous-silicon thin-film transistors under low-gate fieldLiu, Ting / Wagner, Sigurd / Sturm, James C. et al. | 2012
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Optoelectronic devices [breaker page]| 2012
- 249
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Tunnel injection GaN/AlN quantum dot UV LEDVerma, Jai / Kumar Kandaswamy, Prem / Protasenko, Vladimir / Verma, Amit / Xing, Huili / Jena, Debdeep et al. | 2012
- 251
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Characterization and impact of traps in lattice-matched and strain-compensated In1−xGaxAs/GaAs1−ySby multiple quantum well photodiodesChen, Wenjie / Chen, Baile / Yuan, Jinrong / Holmes, Archie / Fay, Patrick et al. | 2012
- 253
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InAs avalanche photodiode with improved electric field uniformityMaddox, S. J. / Sun, W. / Lu, Z. / Nair, H. P. / Campbell, J. C. / Bank, S. R. et al. | 2012
- 255
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278 nm deep ultraviolet LEDs with 11% external quantum efficiencyShatalov, Max / Sun, Wenhong / Lunev, Alex / Hu, Xuhong / Dobrinsky, Alex / Bilenko, Yuri / Yang, Jinwei / Shur, Michael / Gaska, Remis / Moe, Craig et al. | 2012
- 257
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Unipolar barrier-integrated HgCdTe infrared detectorsItsuno, Anne M. / Phillips, Jamie D. / Velicu, Silviu et al. | 2012
- 271
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Biological devices [breaker page]| 2012
- 273
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Physics and scaling prospects of pH-based genome sequencersGo, Jonghyun / Alam, Muhammad A. et al. | 2012
- 275
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Biologically-inspired learning device using three-terminal ferroelectric memristorUeda, M. / Kaneko, Y. / Nishitani, Y. / Morie, T. / Fujii, E. et al. | 2012
- 277
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Fabrication and characterization of field effect reconfigurable nanofluidic ionic diodes: Towards digitally-programmed manipulation of biomoleculesGuan, Weihua / Fan, Rong / Reed, Mark A. et al. | 2012
- 279
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Transparent diamond-based electrolyzer for integration with solar cellPietzka, C. / Gao, Z. / Xu, Y. / Kohn, E. et al. | 2012
- 281
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Author index| 2012
- 285
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Conference at a glance| 2012
- ii
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Officers| 2012
- iii
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[Title page]| 2012
- iv
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Schedule of events| 2012
- vi
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Table of contents| 2012