Reliability aspects of 1200V and 3300V silicon carbide MOSFETs (English)
- New search for: Fursin, L.
- New search for: Li, X.
- New search for: Li, Z.
- New search for: O'Grady, M.
- New search for: Simon, W.
- New search for: Bhalla, A.
- New search for: Fursin, L.
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In:
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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373-377
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2017
- Conference paper / Electronic Resource
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Title:Reliability aspects of 1200V and 3300V silicon carbide MOSFETs
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Contributors:Fursin, L. ( author ) / Li, X. ( author ) / Li, Z. ( author ) / O'Grady, M. ( author ) / Simon, W. ( author ) / Bhalla, A. ( author )
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Published in:
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Publisher:
- New search for: IEEE
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Publication date:2017-10-01
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Size:1226188 byte
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ISBN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Panel discussion overview [2 abstracts]| 2017
- 1
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WiPDA 2017 sponsors| 2017
- 1
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Organizing Committee| 2017
- 1
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Author index| 2017
- 1
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Evaluation of SiC based inverter drivesNarasimhan, Sneha / Karami, Marzieh / Tallam, Rangarajan / Das, Mrinal et al. | 2017
- 1
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Tutorial sessions overview: “SiC power devices: Physics, current status, and future trends”Cooper, Jim et al. | 2017
- 1
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Welcome from the general chair| 2017
- 1
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Keynotes: “Current and future directions in power electronic devices and circuits based on wide band-gap semiconductors”Kizilyalli, Isik C. et al. | 2017
- 1
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Technical program| 2017
- 1
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[Copyright notice]| 2017
- 9
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Safe integration of depletion mode SiC VJFET power modules into a commercial motor driveMazzola, Michael / Gafford, James / Sullivan, Brian et al. | 2017
- 15
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Dead-time optimization for SiC based voltage source converters using online condition monitoringDyer, Jacob / Zhang, Zheyu / Wang, Fred / Costinett, Daniel / Tolbert, Leon M. / Blalock, Benjamin J. et al. | 2017
- 20
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Multilayer busbar design for a Si IGBT and SiC MOSFET hybrid switch based 100 kW three-level T-type PEBBDeshpande, Amol / Luo, Fang et al. | 2017
- 25
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SiC-based automotive traction drives, opportunities and challengesChen, Chingchi / Su, Ming / Xu, Zhuxian / Lu, Xi et al. | 2017
- 31
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Design optimization of GaN vertical power diodes and comparison to Si and SiCFlicker, Jack / Kaplar, Robert et al. | 2017
- 39
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Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliabilityAzam, Faisal / Lee, Bongmook / Misra, Veena et al. | 2017
- 44
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Reverse bias lifetime analysis of 600V enhancement mode GaN devicesKannan, Hari / Veereddy, Deepak / Wang, Zhaofeng / Khalil, Sameh / Charles, Alain / Kim, Hyeongnam / Imam, Mohamed et al. | 2017
- 48
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Low temperature epitaxial deposition of GaN on LTCC substratesAlexandrov, Dimiter / Tot, Jonny / Dubreuil, Robert / Morales, Francisco Miguel / Manuel, Jose Manuel / Jimenez, Juan Jesus / Lacroix, Bertrand / Garcia, Rafael / Videkov, Valentin / Andreev, Svetozar et al. | 2017
- 55
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Investigation of performance degradation in thermally aged cascode GaN power devicesXu, Chi / Ugur, Enes / Akin, Bilal et al. | 2017
- 60
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Design and control methodology for improved operation of a HV bipolar hybrid switched capacitor converterDelhotal, J. / Richards, J. / Stewart, J. / Neely, J. / Flicker, J. / Brocato, R. / Rashkin, L. / Lehr, Jane et al. | 2017
- 67
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An integrated PEBB using e-GaN FETs and nanocrystalline inductors for multiple DC-DC, AC-DC and DC-AC applicationsElsayad, Nour / Berzoy, Alberto / Mohammed, Osama A. et al. | 2017
- 74
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Insulation design for Wide Bandgap (WBG) device based voltage source converter fed motorsMorya, Ajay / Toliyat, Hamid A. et al. | 2017
- 80
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Prediction of Pareto-optimal performance improvements in a power conversion system using GaN devicesZhang, B. / Sudhoff, S. / Pekarek, S. / Swanson, R. / Flicker, J. / Neely, J. / Delhotal, J. / Kaplar, R. et al. | 2017
- 87
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Comparison of methods for current measurement in WBG systemsNew, Christopher / Lemmon, Andrew N. / Shahabi, Ali et al. | 2017
- 93
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Critical short-timescale transient processes of a GaN+Si hybrid switching module used in zero-voltage-switching applicationsLiu, Guanliang / Bai, Kevin Hua / McAmmond, Matt / Brown, Allan / Johnson, Philip Mike / Lu, Juncheng et al. | 2017
- 98
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Application-related characterization and theoretical potential of wide-bandgap devicesEndruschat, Achim / Heckel, Thomas / Gerstner, Holger / Joffe, Christopher / Eckardt, Bernd / Marz, Martin et al. | 2017
- 105
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Evaluation of measurement techniques for high-speed GaN transistorsBiswas, Suvankar / Reusch, David / de Rooij, Michael / Neville, Tom et al. | 2017
- 111
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Application of a 100A normally-on GaN-based device in a 2kW/400V input half-bridge non-isolated DC-DC configurationDalla Vecchia, Mauricio / Van den Broeck, Giel / Ravyts, Simon / Driesen, Johan et al. | 2017
- 116
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Comprehensive switching behavior characterization of high speed Gallium Nitride E-HEMT with ultra-low loop inductancePeng, Han / Ramabhadran, Ramanujam / Thomas, Robert / Schutten, Michael J. et al. | 2017
- 122
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Optimization of an enhancement-mode AlGaN/GaN/AlGaN DHFET towards a high breakdown voltage and low figure of meritBinder, Andrew / Yuan, Jiann-Shiun et al. | 2017
- 127
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Motor loss and temperature reduction with high switching frequency SiC-based invertersYamaguchi, Koji / Katsura, Kenshiro / Jikumaru, Takehiro et al. | 2017
- 132
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Pulsed measurement of sub-nanosecond 1000 V/ns switching 600 V GaN HEMTs using 1.5 GHz low-impedance voltage probe and 50 Ohm scopeMoench, Stefan / Hillenbrand, Philipp / Hengel, Philipp / Kallfass, Ingmar et al. | 2017
- 138
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Breakdown voltage improvement and analysis of GaN HEMTs through field plate inclusion and substrate removalBerzoy, A. / Lashway, C. R. / Moradisizkoohi, H. / Mohammed, Osama A. et al. | 2017
- 143
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A resonant Bi-directional buck-boost converter with distributed voltage stress using eGaN HEMTsMoradisizkoohi, Hadi / Elsayad, Nour / Mohammed, Osama A. et al. | 2017
- 148
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Design and optimization of high conversion ratio quasi square wave buck convertersNaeimi, Yashar / Huang, Alex et al. | 2017
- 153
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SiC MOSFETs designed and evaluated for linear mode operationO'Brien, Heather / Ogunniyi, Aderinto / Urciuoli, Damian / Zhang, Qingchun Jon / Hull, Brett et al. | 2017
- 158
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Comparison of GaN based switched-tank converter and cascaded voltage dividerLyu, Xiaofeng / Li, Yanchao / Cao, Dong / Jiang, Shuai / Nan, Chenhao et al. | 2017
- 165
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Thin layer Ag-Sn transient liquid phase bonding using magnetron sputtering for chip to baseplate bondingNatzke, Philipp / Grossner, Ulrike / Janczak-Rusch, Jolanta / Jeurgens, Lars et al. | 2017
- 171
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A multivariable turn-on/turn-off switching loss scaling approach for high-voltage GaN HEMTs in a hard-switching half-bridge configurationHou, Ruoyu / Xu, Jianchun / Chen, Di et al. | 2017
- 177
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A comprehensive comparison of the static performance of commercial GaN-on-Si devicesPerkins, S. / Arvanitopoulos, A. / Gyftakis, K. N. / Lophitis, N. et al. | 2017
- 185
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Mixed-mode circuit simulation to characterize Ga2O3 MOSFETs in different device structuresLee, Inhwan / Kumar, Avinash / Zeng, Ke / Singisetti, Uttam / Yao, Xiu et al. | 2017
- 190
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Investigation of EM radiation changes in SiC based converters throughout device agingPu, Shi / Ugur, Enes / Akin, Bilal / Akca, Hakan et al. | 2017
- 195
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GaN based inverter with high conversion ratio and sinusoidal output for motor drive applications stress analysisJohnson, Jalen / Cao, Dong / Lyu, Xiaofeng / Ni, Ze et al. | 2017
- 201
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Using ultra-low parasitic hybrid packaging method to reduce high frequency EMI noise for SiC power moduleXie, Yue / Li, Yuxiong / Huang, Zhizhao / Liu, Teng / Zhang, Yi / Tan, Yifan / Chen, Cai / Kang, Yong et al. | 2017
- 208
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Effect of capacitive current on reverse recovery of body diode of 10kV SiC MOSFETs and external 10kV SiC JBS diodesKumar, Ashish / Vechalapu, Kasunaidu / Bhattacharya, Subhashish / Veliadis, Victor / Van Brunt, Edward / Grider, David / Sabri, Shadi / Hull, Brett et al. | 2017
- 213
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A comparison of GaN-based power stages for high-switching speed medium-power convertersHegde, Ashwath / Long, Yu / Kitchen, Jennifer et al. | 2017
- 220
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High power-density photovoltaic boost converter and inverter using GaN and AlGaN devices housed in 3D printed packagesBrocato, Robert et al. | 2017
- 225
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Designing a 1kW GaN PFC stage with over 99% efficiency and 155W/in3 power densityDusmez, Serkan / Ye, Zhong et al. | 2017
- 233
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GaN-FET based grid-connected solar microinverter: Some design insightsGupta, Ankit / Mazumder, Sudip K. et al. | 2017
- 238
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Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM)Sung, Woongje / Han, Kijeong / Baliga, B. J. et al. | 2017
- 242
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Thermal-oxidation-free dielectrics for SiC power devicesRamamurthy, Rahul P. / Morisette, Dallas T. / Amarasinghe, Voshadhi / Feldman, Leonard C. et al. | 2017
- 246
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New generation 6.5 kV SiC power MOSFETSabri, Shadi / Van Brunt, Edward / Barkley, Adam / Hull, Brett / O'Loughlin, Michael / Burk, Al / Allen, Scott / Palmour, John et al. | 2017
- 251
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A simple calorimetric technique for high-efficiency GaN inverter transistor loss measurementLi, He / Li, Xiao / Zhang, Zhangda / Wang, Jin / Liu, Liming / Bala, Sandeep et al. | 2017
- 257
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Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridgesMoench, Stefan / Reiner, Richard / Weiss, Beatrix / Waltereit, Patrick / Quay, Rudiger / Ambacher, Oliver / Kallfass, Ingmar et al. | 2017
- 265
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Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-ChipWeiss, Beatrix / Reiner, Richard / Polyakov, Vladimir / Waltereit, Patrick / Quay, Rudiger / Ambacher, Oliver / Maksimovic, Dragan et al. | 2017
- 273
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Evaluation of 600 V direct-drive GaN HEMT and a comparison to GaN GITAbdullah, Yousef / Li, He / Wang, Jin et al. | 2017
- 277
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A fast overcurrent protection scheme for GaN GITsJones, Edward A. / Williford, Paige / Wang, Fred et al. | 2017
- 285
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Short-circuit performance of multi-chip SiC MOSFET modulesKadavelugu, Arun / Aeloiza, Eddy / Belcastro, Christopher et al. | 2017
- 291
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An overview of advances in high reliability gate driving mechanisms for SiC MOSFETsSakib, Nazmus / Manjrekar, Madhav / Ebong, Abasifreke et al. | 2017
- 295
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Comparative study on the turn-off capability of multiple Si and SiC power devicesZhang, Liqi / Tan, Kai / Song, Xiaoqing / Huang, Alex Q. et al. | 2017
- 300
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SiC power module loss reduction by PWM gate drive patterns and impedance-optimized gate drive voltagesGerstner, Holger / Heckel, Thomas / Endruschat, Achim / Roskopf, Andreas / Eckardt, Bernd / Marz, Martin et al. | 2017
- 308
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Improvement of the modified opposition method used for accurate switching energy estimation of WBG transistorsSathler, Hans / Cougo, Bernardo et al. | 2017
- 316
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Study of 1200 V SiC JFET cascode deviceXie, Ren / Shi, Yanjun / Li, Hui et al. | 2017
- 321
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Characterization and evaluation of 4.5 kV 40 A SiC super-cascode deviceHu, Boxue / Wei, Zhuo / Li, He / Lyu, Xingtong / Xing, Diang / Na, Risha / Wang, Jin et al. | 2017
- 327
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Response surface modeling for parasitic extraction for multi-objective optimization of multi-chip power modules (MCPMs)Le, Quang / Evans, Tristan / Mukherjee, Shilpi / Peng, Yarui / Vrotsos, Tom / Mantooth, H. Alan et al. | 2017
- 335
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A 200 kVA electric vehicle traction drive inverter having enhanced performance over its entire operating regionOlejniczak, Kraig / McNutt, Ty / Simco, David / Wijenayake, Ajith / Flint, Tom / Passmore, Brandon / Shaw, Robert / Martin, Daniel / Curbow, Austin / Casady, Jeff et al. | 2017
- 342
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An improved SiC MOSFET-gate driver integrated power module with ultra low stray inductancesZhang, Liqi / Liu, Pengkun / Huang, Alex Q. / Guo, Suxuan / Yu, Ruiyang et al. | 2017
- 346
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Efficient single-phase cooling techniques for durable power electronics modulePahinkar, Darshan G / Puckett, Waylon / Graham, Samuel / Boteler, Lauren / Ibitayo, Dimeji et al. | 2017
- 352
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Output capacitance losses in 600 V GaN power semiconductors with large voltage swings at high- and very-high-frequenciesZulauf, Grayson / Liang, Wei / Surakitbovorn, Kawin / Rivas-Davila, Juan et al. | 2017
- 360
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A very-high-power-transfer-density GaN-based capacitive wireless power transfer systemSinha, Sreyam / Regensburger, Brandon / Kumar, Ashish / Afridi, Khurram et al. | 2017
- 366
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How eGaN® FETs are enabling large area wireless power transferZhang, Yuanzhe / de Rooij, Michael A. et al. | 2017
- 373
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Reliability aspects of 1200V and 3300V silicon carbide MOSFETsFursin, L. / Li, X. / Li, Z. / O'Grady, M. / Simon, W. / Bhalla, A. et al. | 2017
- 378
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Real-time degradation monitoring of SiC-MOSFETs through readily available system microcontrollerPu, Shi / Ugur, Enes / Akin, Bilal et al. | 2017
- 383
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Detection of gate oxide and channel degradation in SiC power MOSFETs using reflectometryHanif, Abu / Roy, Sourov / Khan, Faisal et al. | 2017
- 388
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A novel characterization method for blocking characteristics of high voltage 4H-SiC power devicesJi, In-Hwan / Kashyap, Avinash S. / Starr, Linda / Odekirk, Bruce / Sdrulla, Dumitru et al. | 2017
- 391
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Comparison of SiC MOSFETs and GaN HEMTs based high-efficiency high-power-density 7.2kW EV battery chargersLiu, Guanliang / Bai, Kevin Hua / McAmmond, Matt / Brown, Allan / Johnson, Philip Mike / Taylor, Allan / Lu, Juncheng et al. | 2017
- 398
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Operation of PCB-embedded, high-voltage multilevel-converter GaN-ICWeiss, Beatrix / Reiner, Richard / Waltereit, Patrick / Quay, Rudiger / Ambacher, Oliver et al. | 2017
- 404
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Protruding ceramic substrates for high voltage packaging of wide bandgap semiconductorsReynes, Hugo / Buttay, Cyril / Morel, Herve et al. | 2017
- 411
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Electrically thin approach to switching cell design for flying capacitor multilevel convertersPallo, Nathan / Modeer, Tomas / Pilawa-Podgurski, Robert C.N. et al. | 2017
- 417
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Current and future directions in power electronic devices and circuits based on wide band-gap semiconductorsKizilyalli, Isik C. / Xu, Yanzhi Ann / Carlson, Eric / Manser, Joseph / Cunningham, Daniel W. et al. | 2017