Investigation of carbon-silicon schottky diodes and their use as chemical sensors (English)
- New search for: Duesberg, Georg S.
- New search for: Kim, Hye-Young
- New search for: Lee, Kangho
- New search for: McEvoy, Niall
- New search for: Winters, Sinead
- New search for: Yim, Chanyoung
- New search for: Duesberg, Georg S.
- New search for: Kim, Hye-Young
- New search for: Lee, Kangho
- New search for: McEvoy, Niall
- New search for: Winters, Sinead
- New search for: Yim, Chanyoung
In:
2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
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85-90
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2013
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ISBN:
- Conference paper / Electronic Resource
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Title:Investigation of carbon-silicon schottky diodes and their use as chemical sensors
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Contributors:Duesberg, Georg S. ( author ) / Kim, Hye-Young ( author ) / Lee, Kangho ( author ) / McEvoy, Niall ( author ) / Winters, Sinead ( author ) / Yim, Chanyoung ( author )
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Published in:
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Publisher:
- New search for: IEEE
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Publication date:2013-09-01
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Size:765253 byte
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ISBN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Front matter| 2013
- 1
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Automotive electronics and energy efficiencyPloss, Reinhard et al. | 2013
- 1
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Author index| 2013
- 3
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FinFETs — Technology and circuit design challengesMaszara, W. P. / Lin, M.-R. et al. | 2013
- 9
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MEMS for automotive and consumer electronicsFinkbeiner, Stefan et al. | 2013
- 15
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Cyborg insects, neural dust and other things: Building interfaces between the synthetic and the multicellularBlanche, T. / Van Kleef, J. / Ledochowitsch, P. / Massey, T. / Muller, R. / Seo, D. J. / Maharbiz, M. M. et al. | 2013
- 16
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Nanometer-scale InGaAs field-effect transistors for THz and CMOS technologiesdel Alamo, J. A. et al. | 2013
- 22
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Ultrahigh-voltage SiC devices for future power infrastructureKimoto, Tsunenobu et al. | 2013
- 30
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Emerging memoriesBaldi, Livio / Sandhu, Gurtej et al. | 2013
- 37
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2D electronics: Graphene and beyondCao, Wei / Kang, Jiahao / Liu, Wei / Khatami, Yasin / Sarkar, Deblina / Banerjee, Kaustav et al. | 2013
- 45
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Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurationsMorita, Y. / Mori, T. / Migita, S. / Mizubayashi, W. / Tanabe, A. / Fukuda, K. / Matsukawa, T. / Endo, K. / O'uchi, S. / Liu, Y. X. et al. | 2013
- 49
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On the optimization of SiGe and III-V compound hetero-junction Tunnel FET devicesRevelant, Alberto / Palestri, Pierpaolo / Osgnach, Patrik / Lizzit, Daniel / Selmi, Luca et al. | 2013
- 53
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Characterization of border traps in III-V MOSFETs using an RF transconductance methodJohansson, Sofia / Mo, Jiongjiong / Lind, Erik et al. | 2013
- 57
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Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrateAgboton, A. / DeFrance, N. / Altuntas, P. / Avramovic, V. / Cutivet, A. / Ouhachi, R. / De Jaeger, J. C. / Bouzid-Driad, S. / Maher, H. / Renvoise, M. et al. | 2013
- 61
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Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility TransistorsBisi, D. / Meneghini, M. / Stocco, A. / Cibin, G. / Pantellini, A. / Nanni, A. / Lanzieri, C. / Zanoni, E. / Meneghesso, G. et al. | 2013
- 65
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Impact of process variability on a frequency-addressed NEMS array sensor used for gravimetric detectionMartin, Olivier / Colinet, Eric / Sage, Eric / Dupre, Cecilia / Villard, Patrick / Hentz, Sebastien / Duraffourg, Laurent / Ernst, Thomas et al. | 2013
- 69
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Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platformBaravelli, E. / Gnani, E. / Grassi, R. / Gnudi, A. / Reggiani, S. / Baccarani, G. et al. | 2013
- 73
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Boosting InAs TFET on-current above 1 mA/μm with no leakage penaltyBetti Beneventi, G. / Gnani, E. / Gnudi, A. / Reggiani, S. / Baccarani, G. et al. | 2013
- 77
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Full-band simulation of p-type ultra-scaled silicon nanowire transistorsSzabo, Aron / Luisier, Mathieu et al. | 2013
- 81
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Gate stack optimization to minimize power consumption in super-lattice fetsMaiorano, P. / Gnani, E. / Gnudi, A. / Reggian, S. / Baccarani, G. et al. | 2013
- 85
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Investigation of carbon-silicon schottky diodes and their use as chemical sensorsDuesberg, Georg S. / Kim, Hye-Young / Lee, Kangho / McEvoy, Niall / Winters, Sinead / Yim, Chanyoung et al. | 2013
- 91
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Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited)Reggiani, S. / Gnani, E. / Gnudi, A. / Baccarani, G. / Poli, S. / Wise, R. / Chuang, M. Y. / Tian, W. / Denison, M. et al. | 2013
- 95
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An experimental study of integrated DMOS transistors with increased energy capabilityZawischka, Timo / Pfost, Martin / Ebli, Michael / Costachescu, Dragos et al. | 2013
- 99
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Porous Si dielectric parameter extraction for use in RF passive device integration: Measurements and simulationsSarafis, P. / Hourdakis, E. / Nassiopoulou, A. G. et al. | 2013
- 103
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4H-SiC MESFET specially designed and fabricated for high temperature integrated circuitsAlexandru, M. / Banu, V. / Godignon, P. / Vellvehi, M. / Millan, J. et al. | 2013
- 107
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Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMTKawanago, T. / Kakushima, K. / Kataoka, Y. / Nishiyama, A. / Sugii, N. / Wakabayashi, H. / Tsutsui, K. / Natori, K. / Iwai, H. et al. | 2013
- 111
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Monolithic fabrication of a planar Gunn diode and a pHEMT side-by-sidePapageorgiou, V. / Khalid, A. / Steer, M. J. / Li, C. / Cumming, D. R. S. et al. | 2013
- 115
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Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTsYoshida, Tomohiro / Kobayashi, Kengo / Otsuji, Taiichi / Suemitsu, Tetsuya et al. | 2013
- 119
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Role of junction depth in light emission from silicon p-i-n ledsPiccolo, G. / Sammak, A. / Hueting, R. J. E. / Schmitz, J. / Nanver, L. K. et al. | 2013
- 123
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Filter-less color sensor in standard CMOS technologyBatistell, Graciele / Sturm, Johannes et al. | 2013
- 127
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New color sensor concept based on single spectral tunable photodiodeWachowiak, Andre / Slesazeck, Stefan / Jordan, Paul / Holz, Jurgen / Mikolajick, Thomas et al. | 2013
- 131
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Towards rectennas for solar energy harvestingSedghi, N. / Zhang, J. W. / Ralph, J. F. / Huang, Y. / Mitrovic, I. Z. / Hall, S. et al. | 2013
- 135
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Photodiodes in deep submicron CMOS process for fully integrated optical receiversAhmad, Waqas / Tormanen, Markus / Sjoland, Henrik et al. | 2013
- 139
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Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETsKim, SangHyeon / Yokoyama, Masafumi / Ikku, Yuki / Nakane, Ryosho / Ichikawa, Osamu / Osada, Takenori / Hata, Masahiko / Takenaka, Mitsuru / Takagi, Shinichi et al. | 2013
- 143
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Scalability of ultra-thin-body and BOX InGaAs MOSFETs on siliconCzornomaz, L. / Daix, N. / Kerber, P. / Lister, K. / Caimi, D. / Rossel, C. / Sousa, M. / Uccelli, E. / Fompeyrine, J. et al. | 2013
- 147
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The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowireVoisin, B. / Roche, B. / Dupont-Ferrier, E. / Sklenard, B. / Cobian, M. / Jehl, X. / Cueto, O. / Wacquez, R. / Vinet, M. / Niquet, Y.-M. et al. | 2013
- 151
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Novel low temperature 3D wafer stacking technology for high density device integrationRadu, I. / Gaudin, G. / van den Daele, W. / Letertre, F. / Mazure, C. / Di Cioccio, L. / Lacave, T. / Mazen, F. / Scheiblin, P. / Signamarcheix, T. et al. | 2013
- 155
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Mobility enhancement by integration of TmSiO IL in 0.65nm EOT high-k/metal gate MOSFETsDentoni Litta, Eugenio / Hellstrom, Per-Erik / Ostling, Mikael et al. | 2013
- 159
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STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) processJang, Doyoung / Bardon, Marie Garcia / Yakimets, Dmitry / Miyaguchi, Kenichi / De Keersgieter, An / Chiarella, Thomas / Ritzenthaler, Romain / Dehan, Morin / Mercha, Abdelkarim et al. | 2013
- 163
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Connecting RRAM performance to the properties of the hafnia-based dielectricsBersuker, Gennadi / Butcher, Brian / Gilmer, David / Kirsch, Paul / Larcher, Luca / Padovani, Andrea et al. | 2013
- 166
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Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRSPuglisi, Francesco M. / Pavan, Paolo / Padovani, Andrea / Larcher, Luca et al. | 2013
- 170
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On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculationsTraore, B. / Vianello, E. / Molas, G. / Gely, M. / Nodin, J. F. / Jalaguier, E. / Blaise, P. / De Salvo, B. / Fonseca, L. R. C. / Xue, K.-H. et al. | 2013
- 174
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Weibull analysis of the kinetics of resistive switches based on tantalum oxide thin filmsNishi, Yoshifumi / Schmelzer, Sebastian / Bottger, Ulrich / Waser, Rainer et al. | 2013
- 178
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A two-step set operation for highly uniform resistive swtiching ReRAM by controllable filamentLee, Sangheon / Lee, Daeseok / Woo, Jiyong / Cha, Euijun / Hwang, Hyunsang et al. | 2013
- 182
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ACE: A robust variability and aging sensor for high-k/metal gate SoCChen, Min / Reddy, Vijay / Krishnan, Srikanth / Ondrusek, Jay / Cao, Yu et al. | 2013
- 186
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Investigation of SRAM using BTI-aware statistical compact modelsDing, Jie / Reid, Dave / Millar, Campbell / Asenov, Asen et al. | 2013
- 190
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Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistorsAoulaiche, M. / Simoen, E. / Ritzenthaler, R. / Schram, T. / Arimura, H. / Cho, M. / Kauerauf, T. / Groeseneken, G. / Horiguchi, N. / Thean, A. et al. | 2013
- 194
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Threshold voltage extraction techniques and temperature effect in context of global variability in UTBB mosfetsMakovejev, S. / Esfeh, B. Kazemi / Raskin, J.-P. / Flandre, D. / Kilchytska, V. / Andrieu, F. et al. | 2013
- 198
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Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillationsCoquand, R. / Barraud, S. / Casse, M. / Koyama, M. / Maffini-Alvaro, V. / Samson, M.-P. / Tosti, L. / Mescot, X. / Ghibaudo, G. / Monfray, S. et al. | 2013
- 202
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Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodesMizubayashi, W. / Fukuda, K. / Mori, T. / Endol, K. / Liu, Y. X. / Matsukawa, T. / O'uchi, S. / Ishikawa, Y. / Migita, S. / Morita, Y. et al. | 2013
- 206
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On the strain induced by arsenic into siliconKoffel, Stephane / Pichler, Peter / Lorenz, Jurgen / Bisognin, Gabriele / Napolitani, Enrico / De Salvador, Davide et al. | 2013
- 210
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High-ohmic resistors using nanometer-thin pure-boron chemical-vapour-deposited layersGolshani, Negin / Mohammadi, V. / Ramesh, Siva / Nanver, Lis K. et al. | 2013
- 214
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Melt depth and time variations during pulsed laser thermal annealing with one and more pulsesHackenberg, M. / Rommel, M. / Rumler, M. / Lorenz, J. / Pichler, P. / Huet, K. / Negru, R. / Fisicaro, G. / Magna, A. La / Taleb, N. et al. | 2013
- 218
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Effect of ions presence in the SiOCH inter metal dielectric structureRebuffat, B. / Della Marca, V. / Masson, P. / Ogier, J.-L. / Mantelli, M. / Paulet, O. / Lopez, L. / Laffont, R. et al. | 2013
- 222
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Novel back-biased UTBB lateral SCR for FDSOI ESD protectionsSolaro, Yohann / Fonteneau, Pascal / Legrand, Charles-Alexandre / Fenouillet-Beranger, Claire / Ferrari, Philippe / Cristoloveanu, Sorin et al. | 2013
- 226
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Reliability tests for discriminating between technological variants of QFN packagingBazu, Marius / Ilian, Virgil Emil / Varsescu, Dragos / Galateanu, Lucian / Sikio, Vili / Reimets, Meelis / Uhl, Volker / Weiss, Manuel et al. | 2013
- 230
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Multi-scale computational framework for the evaluation of variability in the programing window of a flash cell with molecular storageGeorgiev, Vihar P. / Markov, Stanislav / Vila-Nadal, Laia / Busche, Cristoph / Cronin, Leroy / Asenov, Asen et al. | 2013
- 234
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Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stabilityWang, Xingsheng / Cheng, Binjie / Brown, Andrew R. / Millar, Campbell / Kuang, Jente B. / Nassif, Sani / Asenov, Asen et al. | 2013
- 238
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Flicker noise in advanced CMOS technology: Effects of halo implantPaydavosi, Navid / Venugopalan, Sriramkumar / Sachid, Angada / Niknejad, Ali / Hu, Chenming / Dey, Sagnik / Martin, Samuel / Zhang, Xin et al. | 2013
- 242
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Characterization of n-channel MOSFETs: Electrical measurements and simulation analysisUhnevionak, V. / Strenger, C. / Burenkov, A. / Mortet, V. / Bedel-Pereira, E. / Lorenz, J / Pichler, P. et al. | 2013
- 246
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Reconfigurable nanowire electronics — Device principles and circuit prospectsWeber, Walter M. / Trommer, Jens / Martin, Dominik / Grube, Matthias / Heinzig, Andre / Mikolajick, Thomas et al. | 2013
- 252
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Electrical and thermoelectrical properties of gated InAs nanowiresMensch, Philipp / Karg, Siegfried / Gotsmann, Bernd / Das Kanungo, Pratyush / Schmidt, Volker / Troncale, Valentina / Schmid, Heinz / Riel, Heike et al. | 2013
- 256
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Low frequency noise in strained silicon nanowire array MOSFETs and Tunnel-FETsRichter, S. / Vitusevich, S. / Pud, S. / Li, J. / Knoll, L. / Trellenkamp, S. / Schafer, A. / Lenk, S. / Zhao, Q. T. / Offenhausser, A. et al. | 2013
- 260
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Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memoriesSchenk, T. / Mueller, S. / Schroeder, U. / Materlik, R. / Kersch, A. / Popovici, M. / Adelmann, C. / Van Elshocht, S. / Mikolajick, T. et al. | 2013
- 264
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A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applicationsPalma, G. / Vianello, E. / Thomas, O. / Oucheikh, H. / Onkaraiah, S. / Toffoli, A. / Carabasse, C. / Molas, G. / De Salvo, B. et al. | 2013
- 268
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Nonvolatile resistive memory devices based on hydrogenated amorphous carbonDellmann, L. / Sebastian, A. / Jonnalagadda, P. / Santini, C. A. / Koelmans, W. W. / Rossel, C. / Eleftheriou, E. et al. | 2013
- 272
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Monolithic integration of pseudo-spin-MOSFETs using a custom CMOS chip fabricated through multi-project wafer serviceNakane, R. / Shuto, Y. / Sukegawa, H. / Wen, Z. C. / Yamamoto, S. / Mitani, S. / Tanaka, M. / Inomata, K. / Sugahara, S. et al. | 2013
- 276
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Nanomagnetic logic clocked in the MHz regimeBecherer, M. / Kiermaier, J. / Breitkreutz, S. / Eichwald, I. / Csaba, G. / Schmitt-Landsiedel, D. et al. | 2013
- 280
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Micron-scale inkjet-assisted digital lithography for large-area flexible electronicsSporea, R. A. / Alshammari, A. S. / Georgakopoulos, S. / Underwood, J. / Shkunov, M. / Silva, S. R. P. et al. | 2013
- 284
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Design and array implementation a cantilever-based non-volatile memory utilizing vibrational resetDo, Anh Tuan / Gopal, Jayaraman Karthik / Singh, Pushpapraj / Li, Chua Geng / Yeo, Kiat Seng / Kim, Tony Tae-Hyoung et al. | 2013
- 288
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RF MEMS power sensors for ultra-low power wake-up circuit applicationsVitale, Wolfgang A. / Fernandez-Bolanos, Montserrat / Bazigos, Antonios / Dehollain, Catherine / Ionescu, Adrian M. et al. | 2013
- 292
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Design of a poly silicon MEMS microphone for high signal-to-noise ratioDehe, Alfons / Wurzer, Martin / Fuldner, Marc / Krumbein, Ulrich et al. | 2013
- 296
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Magnetoresistance measurements and unusual mobilitiy behavior in FD MOSFETsChang, Sung-Jae / Cristoloveanu, Sorin / Bawedin, Maryline / Lee, Jong-Hyun / Lee, Jung-Hee / Mukhopadhyay, S. / Piot, B. A. et al. | 2013
- 300
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Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETsKoyama, M. / Casse, M. / Coquand, R. / Barraud, S. / Ghibaudo, G. / Iwai, H. / Reimbold, G. et al. | 2013
- 304
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Why are SCE overestimated in FD-SOI MOSFETs?Navarro, C. / Bawedin, M. / Andrieu, F. / Sagnes, B. / Cristolovcanu, S. et al. | 2013
- 308
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Atomistic simulation of electron and phonon transport in nano-devicesLuisier, Mathieu / Rhyner, Reto et al. | 2013
- 314
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DC and small-signal numerical simulation of graphene base transistor for terahertz operationDi Lecce, Valerio / Grassi, Roberto / Gnudi, Antonio / Gnani, Elena / Reggiani, Susanna / Baccarani, Giorgio et al. | 2013
- 318
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Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz bandKawasaki, Tetsuya / Dobroiu, Adrian / Eto, Takanori / Kurita, Yuki / Kojima, Kazuki / Yabe, Yuhei / Sugiyama, Hiroki / Watanabe, Takayuki / Takabayashi, Susumu / Suemitsu, Tetsuya et al. | 2013
- 322
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On-wafer graphene diodes for high-frequency applicationsDragoman, Mircea / Dinescu, Adrian / Dragoman, Daniela et al. | 2013
- 326
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Carbon nanotube resistors as gas sensors: Towards selective analyte detection with various metal-nanotubeinterfacesGuerin, Hoel / Poche, Helene Le / Pohle, Roland / Fernandez-Bolanos, Montserrat / Dijon, Jean / Ionescu, Adrian M. et al. | 2013
- 330
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A negative differential resistance effect implemented with a single MOSFET from 375 k down to 80 kVega-Gonzalez, Victor / Gutierrez-Dominguez, Edmundo / Guarin, Fernando et al. | 2013
- 334
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Reduction of momentum and spin relaxation rate in strained thin silicon filmsOsintsev, D. / Sverdlov, V. / Selberherr, S. et al. | 2013
- 338
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Compact modeling of STT-MTJ for SPICE simulationXu, Zihan / Sutaria, Ketul B. / Yang, Chengen / Chakrabarti, Chaitali / Cao, Yu et al. | 2013
- 342
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Understanding the conduction mechanism of the chalcogenide Ag2S silver-doped through ab initio simulationTodorova, Tsanka Z. / Blaise, Philippe / Vianello, Elisa / Fonseca, Leonardo R. C. et al. | 2013
- 346
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Modeling the dynamic self-heating of PCMMarcolini, G. / Giovanardi, F. / Rudan, M. / Buscemi, F. / Piccinini, E. / Brunetti, R. / Cappelli, A. et al. | 2013
- 350
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Low power finfet ph-sensor with high-sensitivity voltage readoutRigante, S. / Livi, P. / Wipf, M. / Bedner, K. / Bouvet, D. / Bazigos, A. / Rusu, A. / Hierlemann, A. / Ionescu, A. M. et al. | 2013
- 354
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Flexible platinum nanoparticle strain sensorsSkotadis, E. / Mousadakos, D. / Tanner, J. / Tsoukalas, D. / Broutas, P. et al. | 2013
- 358
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MEMS sensors for high voltage linesMoagar-Poladian, Victor / Moagar-Poladian, Gabriel et al. | 2013
- 362
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Investigation of gate material ductility enables flexible a-IGZO TFTs bendable to a radius of 1.7 mmMunzenrieder, Niko / Petti, Luisa / Zysset, Christoph / Gork, Deniz / Buthe, Lars / Salvatore, Giovanni A. / Troster, Gerhard et al. | 2013
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Table of contents| 2013