Simulation Study of a p-LDMOS With Double Electron Paths to Enhance Current Capability (English)
- New search for: Yi, Bo
- Further information on Yi, Bo:
- https://orcid.org/0000-0002-6596-8480
- New search for: Kong, Moufu
- Further information on Kong, Moufu:
- https://orcid.org/0000-0003-2964-7652
- New search for: Cheng, Junji
- Further information on Cheng, Junji:
- https://orcid.org/0000-0002-6163-6219
- New search for: Yi, Bo
- Further information on Yi, Bo:
- https://orcid.org/0000-0002-6596-8480
- New search for: Kong, Moufu
- Further information on Kong, Moufu:
- https://orcid.org/0000-0003-2964-7652
- New search for: Cheng, Junji
- Further information on Cheng, Junji:
- https://orcid.org/0000-0002-6163-6219
In:
IEEE Electron Device Letters
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39
, 11
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1700-1703
;
2018
- Article (Journal) / Electronic Resource
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Title:Simulation Study of a p-LDMOS With Double Electron Paths to Enhance Current Capability
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Contributors:
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Published in:IEEE Electron Device Letters ; 39, 11 ; 1700-1703
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Publisher:
- New search for: IEEE
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Publication date:2018-11-01
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Size:1479639 byte
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 39, Issue 11
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1625
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Table of contents| 2018
- 1628
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Performance Comparison of ${n}$ –Type Si Nanowires, Nanosheets, and FinFETs by MC Device SimulationBufler, F. M. / Ritzenthaler, R. / Mertens, H. / Eneman, G. / Mocuta, A. / Horiguchi, N. et al. | 2018
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First Experimental Demonstration and Mechanism of Abnormal Palladium Diffusion Induced by Excess Interstitial GeChou, Chen-Han / Shih, An-Shih / Yu, Shao-Cheng / Lin, Yu-Hsi / Tsai, Yi-He / Lin, Chiung-Yuan / Yeh, Wen-Kuan / Chien, Chao-Hsin et al. | 2018
- 1636
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Enhanced Interface Characteristics of PA-ALD HfOxNy/InGaAs MOSCAPs Using IPA Oxygen Reactant and Cyclic N2 PlasmaEom, Su-Keun / Kong, Min-Woo / Kang, Myoung-Jin / Lee, Jae-Gil / Cha, Ho-Young / Seo, Kwang-Seok et al. | 2018
- 1640
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${L}_{{g}} = {87}$ nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and $f_{{T}}$ of 559 GHzJo, Hyeon-Bhin / Baek, Ji-Min / Yun, Do-Young / Son, Seung-Woo / Lee, Jung-Hee / Kim, Tae-Woo / Kim, Dae-Hyun / Tsutsumi, Takuya / Sugiyama, Hiroki / Matsuzaki, Hideaki et al. | 2018
- 1644
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Random Telegraph Noise Read Instability Characteristics in a Megabit RRAM ArrayWu, Chun-Yu / Kuo, Wen-Hsien / Wang, Wayne / Lee, Yung-Huei / Chu, Wen-Ting / Chang, Chih-Yang / Liao, Ta-Chuan et al. | 2018
- 1648
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Modeling of Read-Disturb-Induced SET-State Current Degradation in a Tungsten Oxide Resistive Switching MemorySu, Po-Cheng / Jiang, Cheng-Min / Wang, Chih-Wei / Wang, Tahui et al. | 2018
- 1652
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Impact of RTN on Pattern Recognition Accuracy of RRAM-Based Synaptic Neural NetworkChai, Zheng / Freitas, Pedro / Zhang, Weidong / Hatem, Firas / Zhang, Jian Fu / Marsland, John / Govoreanu, Bogdan / Goux, Ludovic / Kar, Gouri Sankar et al. | 2018
- 1656
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Write Disturb in Ferroelectric FETs and Its Implication for 1T-FeFET AND Memory ArraysNi, Kai / Li, Xueqing / Smith, Jeffrey A. / Jerry, Matthew / Datta, Suman et al. | 2018
- 1660
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High-Resolution Flexible AMOLED Display Integrating Gate Driver by Metal–Oxide TFTsWu, Wei-Jing / Chen, Jun-Wei / Wang, Jun-Sheng / Zhou, Lei / Tao, Hong / Zou, Jian-Hua / Xu, Miao / Wang, Lei / Peng, Jun-Biao / Chan, Mansun et al. | 2018
- 1664
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Effect of Microwave Annealing on Transparent In–Ga–ZnO Thin-Film Transistors With Graphene Source and Drain ElectrodesHong, Eun-Ki / Cho, Won-Ju et al. | 2018
- 1668
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High-Quality Solution-Processed Metal-Oxide Gate Dielectrics Realized With a Photo-Activated Metal-Oxide Nanocluster PrecursorJo, Jeong-Wan / Kim, Kyung-Tae / Facchetti, Antonio / Kim, Myung-Gil / Park, Sung Kyu et al. | 2018
- 1672
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Rapid Improvement in Thin Film Transistors With Atomic-Layer-Deposited InOx Channels via O2 Plasma TreatmentMa, Qian / Shao, Yan / Wang, Y.-P. / Zheng, H.-M. / Zhu, B. / Liu, W.-J. / Ding, Shi-Jin / Zhang, D. W. et al. | 2018
- 1676
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Oxide-Based Complementary Inverters With High Gain and Nanowatt Power ConsumptionYuan, Yuzhuo / Yang, Jin / Hu, Zhenjia / Li, Yunpeng / Du, Lulu / Wang, Yiming / Zhou, Li / Wang, Qingpu / Song, Aimin / Xin, Qian et al. | 2018
- 1680
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InSnZnO Thin-Film Transistors With Vapor- Phase Self-Assembled Monolayer as Passivation LayerZhong, Wei / Li, Guoyuan / Lan, Linfeng / Li, Bin / Chen, Rongsheng et al. | 2018
- 1684
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OFF-State-Stress-Induced Instability in Switching Polycrystalline Silicon Thin-Film Transistors and Its Improvement by a Bridged-Grain StructureZhang, Meng / Yan, Yan / Li, Guijun / Deng, Sunbin / Zhou, Wei / Chen, Rongsheng / Wong, Man / Kwok, Hoi-Sing et al. | 2018
- 1688
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Graphene/MoS2/Si Nanowires Schottky-NP Bipolar van der Waals Heterojunction for Ultrafast PhotodetectorsYu, Yongqiang / Li, Zhi / Lu, Zhijian / Geng, Xiangshun / Lu, Yingchun / Xu, Gaobin / Wang, Li / Jie, Jiansheng et al. | 2018
- 1692
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Highly Efficient Trilayered White Quantum Dot Light Emitting Diodes Based on Organic Buffer LayersChang, Chun / Zhang, Qin / Zhao, Weifeng / Li, Feng / Huang, Yan / Li, Longxiang / Shen, Huaibin / Li, Qinghua et al. | 2018
- 1696
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Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current RatioLiu, Yaxuan / Du, Lulu / Liang, Guangda / Mu, Wenxiang / Jia, Zhitai / Xu, Mingsheng / Xin, Qian / Tao, Xutang / Song, Aimin et al. | 2018
- 1700
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Simulation Study of a p-LDMOS With Double Electron Paths to Enhance Current CapabilityYi, Bo / Kong, Moufu / Cheng, Junji et al. | 2018
- 1704
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Characterization and Modeling of Hydrogen-Terminated MOSFETs With Single-Crystal and Polycrystalline DiamondFu, Yu / Xu, Ruimin / Xu, Yuehang / Zhou, Jianjun / Wu, Qingzhi / Kong, Yuechan / Zhang, Yong / Chen, Tangsheng / Yan, Bo et al. | 2018
- 1708
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Ultraviolet Light-Based Current–Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in $\beta$ -Ga2O3 FETsBae, Hagyoul / Noh, Jinhyun / Alghamdi, Sami / Si, Mengwei / Ye, Peide D. et al. | 2018
- 1712
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A Novel On-Chip Transformer With Patterned Ground Shield for High Common-Mode Transient Immunity Isolated Signal TransferWu, Rongxiang / Chen, Julong / Fang, Xiangming et al. | 2018
- 1716
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High-Voltage Vertical GaN p-n Diodes by Epitaxial Liftoff From Bulk GaN SubstratesWang, Jingshan / McCarthy, Robert / Youtsey, Chris / Reddy, Rekha / Xie, Jinqiao / Beam, Edward / Guido, Louis / Cao, Lina / Fay, Patrick et al. | 2018
- 1720
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High-Mobility Normally OFF Al2O3/AlGaN/GaN MISFET With Damage-Free Recessed-Gate StructureZhang, Jialin / He, Liang / Li, Liuan / Ni, Yiqiang / Que, Taotao / Liu, Zhenxin / Wang, Wenjing / Zheng, Jiexin / Huang, Yanfen / Chen, Jia et al. | 2018
- 1724
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Large-Area 4H-SiC Ultraviolet Avalanche Photodiodes Based on Variable-Temperature Reflow TechniqueZhou, Xingye / Han, Tingting / Lv, Yuanjie / Li, Jia / Lu, Weili / Wang, Yuangang / Song, Xubo / Tan, Xin / Liang, Shixiong / Feng, Zhihong et al. | 2018
- 1728
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Total Ionizing Dose Effect on Ring Oscillator Frequency in 28-nm FD-SOI TechnologySeo, Dongkyu / Trang, Le Dang / Han, Jin-Woo / Kim, Jinsang / Lee, Senghyun / Chang, Ik-Joon et al. | 2018
- 1732
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Schottky Nature of Au/SnO2 Ultrathin Film Diode Fabricated Using Sol–Gel ProcessJang, Bongho / Kim, Taegyun / Lee, Sojeong / Lee, Won-Yong / Jang, Jaewon et al. | 2018
- 1736
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Self-Rectifying DNTT MemristorsKim, Chang-Hyun et al. | 2018
- 1740
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A Flexible and Adaptable Ethanol Vapor Sensor Derived From an Adhesive TapeZhang, Yalei / Cui, Yue et al. | 2018
- 1744
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Nanoelectromechanical Disk Resonators as Highly Sensitive Mass SensorsQaradaghi, Vahid / Ramezany, A. / Babu, S. / Lee, J. B. / Pourkamali, S. et al. | 2018
- 1748
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A Self-Adaptive Stiffness Approach to Improving the Robustness of Electrostatic Switches Against Parameter VariationsXiang, Xiaojian / Dai, Xuhan / Wang, Kai / Sun, Shi / Ding, Guifu / Zhao, Xiaolin et al. | 2018
- 1752
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An Integrated On-Chip Flux Concentrator for Galvanic Current SensingPoluri, Nagaditya / De Souza, Maria Merlyne et al. | 2018
- 1756
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A Wearable Self-Driven Impulse Sensor Based on a Mechanical-Field-Coupled Thin-Film TransistorRasheed, Ahmed / Iranmanesh, Emad / Li, Weiwei / Feng, Xiao / Ou, Hai / Wang, Kai et al. | 2018
- 1760
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Silicon Oxycarbide-Derived Carbon as Potential NO2 Gas Sensor: A First Principles’ StudyLiao, Ningbo / Zhou, Hongming / Zheng, Beirong / Xue, Wei et al. | 2018
- 1764
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Biological Band-Pass Filtering Emulated by Oxide-Based Neuromorphic TransistorsWan, Xiang / He, Yongli / Nie, Sha / Shi, Yi / Wan, Qing et al. | 2018
- 1768
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Drift-Enhanced Unsupervised Learning of Handwritten Digits in Spiking Neural Network With PCM SynapsesOh, Sangheon / Shi, Yuhan / Liu, Xin / Song, Jungwoo / Kuzum, Duygu et al. | 2018
- 1772
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Device Performance Assessment of Monolayer HfSe2: A New Layered Material Compatible With High- $\kappa$ HfO2AlMutairi, AbdulAziz / Yoon, Youngki et al. | 2018
- 1776
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Phase Transition FETs for Improved Dynamic Logic GatesAvedillo, Maria J. / Jimenez, Manuel / Nunez, Juan et al. | 2018
- 1780
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Switching Dynamics of Ferroelectric Zr-Doped HfO2Alessandri, Cristobal / Pandey, Pratyush / Abusleme, Angel / Seabaugh, Alan et al. | 2018
- 1784
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Device Modeling of MgO-Barrier Tunneling Magnetoresistors for Hybrid Spintronic-CMOSZuo, Siming / Nazarpour, Kianoush / Heidari, Hadi et al. | 2018
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EDS Meetings Calendar| 2018
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IEEE Electron Device Letters information for authors| 2018
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2019 IEEE International Vacuum Electronics Conference| 2018
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