Optical properties of group-III nitride based quantum wells (English)
- New search for: Lefebvre, P.
- New search for: Lefebvre, P.
In:
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.
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227-232
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2002
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ISBN:
- Conference paper / Electronic Resource
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Title:Optical properties of group-III nitride based quantum wells
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Contributors:Lefebvre, P. ( author )
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Published in:
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Publisher:
- New search for: IEEE
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Publication date:2002-01-01
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Size:281061 byte
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ISBN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Space-grown SI-GaAs and its applicationNuoFu Chen, / Xingru Zhong, / Mian Zhang, / Lanying Lin, et al. | 2002
- 9
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Hopping conduction in lithium diffused and annealed GaAsGudmundsson, J.T. / Svavarsson, H.G. / Gislason, H.P. et al. | 2002
- 13
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Growth of InP substrate crystals by the vertical gradient freeze techniqueSahr, U. / Muller, G. et al. | 2002
- 19
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Inspection of residual strain in GaAs single crystal as standard ingot formYamada, M. / Tao Chu, et al. | 2002
- 23
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Electric field distribution in chromium compensated GaAsTyazhev, A.V. / Budnitsky, D.L. / Tolbanov, O.P. et al. | 2002
- 27
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Photocurrent and photoluminescence in Fe-doped InPAlvarez, A. / Gonzalez, M.A. / Avella, M. / Jimenez, J. / Fornari, R. et al. | 2002
- 31
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Electrical properties of semi-insulating GaAS irradiated with neutronsBohacek, P. / Morvic, M. / Betko, J. / Dubecky, F. / Huran, J. et al. | 2002
- 35
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GaAs for X-imaging and particle detectorsAyzenshtat, A.I. / Budnitsky, D.L. / Koretskaya, O.B. / Okaevich, L.S. / Novikov, V.A. / Potapov, A.I. / Tolbanov, O.P. / Tyazhev, A.V. / Vorobiev, A.P. et al. | 2002
- 41
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Heteroepitaxy of GaN on Si(111)Krost, A. / Dadgar, A. et al. | 2002
- 48
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Direct determination of the built-in polarization field in InGaN/GaN quantum wellsSchmidt, R. / Kiesel, P. / Kneissl, M. / Van de Walle, C.G. / Johnson, N.M. / Renner, F. / Dohler, G.H. et al. | 2002
- 52
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Electrical characterization of hydrogenated n-type AlGaNSeghier, D. / Gislason, H. et al. | 2002
- 56
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Photoenhanced wet etching of n-gallium nitrideSkriniarova, J. / Michalka, M. / Uherek, F. / Kordos, P. et al. | 2002
- 60
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High quality quaternary InAlGaN alloys grown by plasma-assisted molecular beam epitaxyDimakis, E. / Georgakilas, A. / Kittler, G. / Androulidaki, M. / Tsagaraki, K. / Bellet-Amalric, E. / Jalabert, D. / Pelekanos, N.T. et al. | 2002
- 64
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Group III-nitride devices for field effect based gas detectionEickhoff, M. / Schalwig, J. / Weidemann, O. / Gorgens, L. / Muller, G. / Stutzmann, M. et al. | 2002
- 64
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Group III-Nitride Divices for Field Effect Based Gas DetectionEickhoff, M. / Schalwig, J. / Weidemann, O. / Gorgens, L. / Muller, G. / Stutzmann, M. / IEEE / Slovak Academy of Sciences et al. | 2002
- 70
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Differences and similarities between structural properties of GaN grown by different growth methodsLiliental-Weber, Z. / Jasinski, J. / Washburn, J. et al. | 2002
- 76
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Characterization of GaN/InGaN Hetero-structures by SEM and CLFornari, R. / Bosi, M. / Avella, M. / Martin, E. / Jimenez, J. / IEEE / Slovak Academy of Sciences et al. | 2002
- 76
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Chareterization of GaN/InGaN hetero-structures by SEM and CLFornari, R. / Bosi, M. / Avella, M. / Martin, E. / Jimenez, J. et al. | 2002
- 80
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Influence of Isochronal Annealing on the Evolution of Hole Traps in GaAsN Epilayers Grown by Metalorganic Chemical Vapour DepositionGao, Q. / Tan, H. H. / Jagadish, C. / Deenapanray, P. N. K. / IEEE / Slovak Academy of Sciences et al. | 2002
- 80
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Influence of isochronal annealing on the evolution of hole traps in GaAsN epilayers grown by metalorganic chemical vapor depositionGao, Q. / Tan, H.H. / Jagadish, C. / Deenapanray, P.N.K. et al. | 2002
- 87
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Growth and fundamental properties of GeSi bulk crystalsYonenaga, I. et al. | 2002
- 93
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Optical and structural characterisation of CdTe crystals grown by physical vapour transport and Bridgman methodsArmani, N. / Ferrari, C. / Salviati, G. / Bissoli, F. / Zha, M. / Zappettini, A. / Zanotti, L. et al. | 2002
- 97
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The thermal stability of Ni and Ni/Au ohmic contacts to n-type 4H-SiCKim, B.K. / Burm, J. / An, C. et al. | 2002
- 102
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A Step Forward to the Growth and Characterization of Compositionally Homogeneous In~xGa~1~-~xAs Bulk CrystalVerma, P. / Islam, M. R. / Yamada, M. / Hanaue, Y. / Kinoshita, K. / Tatsumi, M. / IEEE / Slovak Academy of Sciences et al. | 2002
- 102
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A step forward to the growth and characterization of compositionally homogeneous In/sub x/Ga/sub 1-x/As bulk crystalVerma, P. / Islam, M.R. / Yamada, M. / Hanaue, Y. / Kinoshita, K. / Tatsumi, M. et al. | 2002
- 106
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Electrical study of 4H-SiC irradiated with swift heavy ionsKalinina, E. / Onushkin, G. / Davidov, D. / Hallen, A. / Konstantinov, A. / Skuratov, V.A. / Stano, J. et al. | 2002
- 110
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Luminescence properties of semi-insulating nominally-undoped CdTe crystalsZappettini, A. / Corregidor, V. / Dieguez, E. / Zha, M. / Bissoli, F. / Zanotti, L. et al. | 2002
- 114
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Plasma deposited N-doped a-SiC:H films: characterizationHuran, J. / Hotovy, I. / Kobzev, A.P. / Balalykin, N.I. et al. | 2002
- 121
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LT (Al)GaAs and Al(Ga)As Oxides for Electronic ApplicationsChamplain, J. / Zheng, C. / Mishra, U. / IEEE / Slovak Academy of Sciences et al. | 2002
- 121
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LT (Al)GaAs and Al(Ga)As/AlAsSb oxides for electronic applicationsChamplain, J. / Zheng, C. / Mishra, U. et al. | 2002
- 125
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Properties of GaAs/Si heterostructure material fabricated by low temperature wafer bonding using a spin-on-glass intermediate layerDeligeorgis, G. / Gallis, S. / Androulidaki, M. / Cengher, D. / Hatzopoulos, Z. / Alexe, M. / Dragoi, V. / Kyriakis-Bitzaros, E.D. / Halkias, G. / Peiro, F. et al. | 2002
- 129
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Visible rown-temperature photoluminescence of AlN films, prepared by RF magnetron sputteringLigatchev, V. / Wong, T.K.S. / Yoon, S.F. / Ahn, J. / Rusli, et al. | 2002
- 129
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Visible Room-temperature Photoluminescence of AlN Films, Prepared by RF Magnetron SputteringLigatchev, V. / Wong, T. K. S. / Yoon, S. F. / Ahn, J. / Rusli / IEEE / Slovak Academy of Sciences et al. | 2002
- 133
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LT GaMnAs and GaMnN - Prospect Materials for SpintronicsKaminska, M. / Twardowski, A. / IEEE / Slovak Academy of Sciences et al. | 2002
- 133
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LT GaMnAs and GaMnN - Prospective materials for spintronicsKaminska, M. / Twardowski, A. et al. | 2002
- 139
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Lattice stress gradient formation in oxide films deposited on substrates when used sputtering techniquesSutta, P. et al. | 2002
- 143
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Electrical isolation of ZnO by ion irradiationKucheyev, S.O. / Jagadish, C. / Williams, J.S. / Deenapanray, P.N.K. / Yano, M. / Koike, K. / Sasa, S. / Inoue, M. / Ogata, K. et al. | 2002
- 147
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Electronic spectrum of defects in SiOCH dielectric films measured by deep level transient spectroscopyLigatchev, V.A. / Wong, T.K.S. / Liu, B. / Rusli, et al. | 2002
- 153
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Advanced X-ray imaging techniques for semiconductor wafer characterisationBaumbach, T. / Mikulik, P. / Korytar, D. / Pernot, P. / Lubbert, D. / Helfen, L. / Herms, M. / Landesberger, Ch. et al. | 2002
- 159
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On the alpha particle induced degradation in n-type GaAs layersArpatzanis, N. / Constantinidis, G. / Georgakilas, A. / Papaioannou, G.J. / Papastamatiou, M. et al. | 2002
- 165
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Deep-trap governed carrier dynamics in semi-insulating crystals analyzed by time-resolved four-wave mixing techniqueJarasiunas, K. / Sudzius, M. / Aleksiejunas, R. et al. | 2002
- 169
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Indication of Minority Carrier Extraction at the Bulk Semi-insulating GaAs/As-implanted and LTG MBE GaAs InterfaceDubecky, F. / Zat ko, B. / Ferrari, C. / Smatko, V. / Forster, A. / Kordos, P. / IEEE / Slovak Academy of Sciences et al. | 2002
- 169
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Indication of minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interfaceDubecky, F. / Zat'ko, B. / Ferrari, C. / Smatko, V. / Forster, A. / Kordos, P. et al. | 2002
- 173
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Photoluminescence characterization of interface abruptness of GaAs/ AlGaAs quantum wells grown on [411]A and [100] GaAs substratesKusano, T. / Satake, A. / Fujiwara, K. / Shimomura, S. / Kitada, T. / Hiyamizu, S. et al. | 2002
- 177
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The photoluminescence studies of high purity InPSurma, B. / Wnuk, A. / Dubecky, F. / Piersa, M. / Hruban, A. et al. | 2002
- 181
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The capacitance-voltage characteristics of metal-ferroelectric-insulator-silicon structures for non-volatile memory applicationsChun-Lin Hou, / Joseph Ya-min Lee, et al. | 2002
- 185
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Space charge effects and carrier capture transient behaviour in semi-insulating GaAs and GaNVaitkus, J. / Gaubas, E. / Kazukauskas, V. / Lacroix, Y. / Sakai, S. / Smith, K. / Storasta, J. / Wang, T. et al. | 2002
- 190
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Non-uniform photocurrent transport and tunneling resonances in composite InGaAs/AlGaAs and GaAs/AlGaAs quantum wellsKawasaki, K. / Fujiwara, K. / Sano, N. et al. | 2002
- 194
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Two-dimensional mapping of composition in bulk In/sub x/Ga/sub 1-x/As crystals using photoluminescenceIslam, M.R. / Suzuki, M. / Verma, P. / Yamada, M. / Tatsumi, M. / Hanaue, Y. / Kinoshita, K. et al. | 2002
- 194
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Two-dimensional Mapping of Composition in Bulk In~xGa~1~-~xAs Crystals Using PhotoluminescenceIslam, M. R. / Suzuki, M. / Verma, P. / Yamada, M. / Tatsumi, M. / Hanaue, Y. / Kinoshita, K. / IEEE / Slovak Academy of Sciences et al. | 2002
- 198
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Laser technology in the formation of AuPt and AuPtTi contactsMachac, P. / Myslik, V. / Perina, V. / Zlamal, J. et al. | 2002
- 202
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The influence of glow-discharge cleaning of Ge/Pd-GaAs on the specific contact resistivityZlamal, J. / Myslik, V. / Machac, P. et al. | 2002
- 209
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Single Heterojunction barrier at terahertz frequencyHorak, M. et al. | 2002
- 213
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A new concept for highly efficient THz photomixers based on quasi ballistic transport and thin LT-GaAs recombination layersKiesel, P. / Renner, F. / Eckardt, M. / Schwanhausser, A. / Robledo, L. / Friedrich, A. / Pohl, P. / Dohler, G.H. et al. | 2002
- 217
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Electron and role trapping parameters of low-temperature-grown GaAsRoux, J.-F. / Coutaz, J.-L. / Marcinkevicius, S. / Siegert, J. / Kaminska, M. / Wolos, A. / Krotkus, A. et al. | 2002
- 217
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Electron and Hole Trapping Parameters of Low-temperature-grown GaAsRoux, J.-F. / Coutaz, J.-L. / Marcinkevicius, S. / Siegert, J. / Kaminska, M. / Wolos, A. / Krotkus, A. / IEEE / Slovak Academy of Sciences et al. | 2002
- 221
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Ultrafast carrier trapping in high energy ion implanted indium phosphideCamody, C. / Boudinov, H. / Tan, H.H. / Jagadish, C. / Dao, L.V. / Gal, M. et al. | 2002
- 227
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Optical properties of group-III nitride based quantum wellsLefebvre, P. et al. | 2002
- 233
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Two- and three-dimensional arrays of nanoscale as clusters in low-temperature grown GaAsBert, N.A. / Cherkashin, N.A. / Chaldyshev, V.V. / Claverie, A. / Preobrazhenskii, V.V. / Putyato, M.A. / Semyagin, B.R. / Werner, P. et al. | 2002
- 237
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Leakage Current in GaAs/AlGaAs-based Buried-heterostructure Laser Diodes with Semi-insulating GaInP:Fe Burying LayerBarrios, C. A. / Lourdudoss, S. / IEEE / Slovak Academy of Sciences et al. | 2002
- 237
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Leakage currents in GaAs/AlGaAs-based buried-heterostructure laser diodes with semi-insulating GaInP:Fe burying layerBarrios, C.A. / Lowdudoss, S. et al. | 2002
- 241
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Competitive capture and escape processes of electrically injected carriers in blue InGaN single quantum well light emitting diodesHori, A. / Yasunaga, D. / Fujiwara, K. et al. | 2002
- 245
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Photoclectronic properties of InGaAs/GaAs heterostructures with combined quantum well and self-organized quantum dot layersKarpovich, I.A. / Levichev, S.B. / Baidus, N.V. / Zvonkov, B.N. / Filatov, D.O. et al. | 2002
- 245
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Photoelectronic Properties of InGaAs/GaAs Heterostructures with Combined Quantum Well and Self-organized Quantum Dot LayersKarpovich, I. A. / Levichev, S. B. / Baidus, N. V. / Zvonkov, B. N. / Filatov, D. O. / IEEE / Slovak Academy of Sciences et al. | 2002
- 251
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Low-bandgap nitrides: Issues and applicationsTu, C.W. et al. | 2002
- 258
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Development and performance of imaging radiation detector based on semi-insulating GaAs: Application in gamma-ray computer tomograph for industrial purposesDubecky, F. / Zat ko, B. / Necas, V. / Scepko, P. / Gajtanska, M. / Sekacova, M. / Perd ochova, A. / Sekerka, V. / Huran, J. / Bohacek, P. et al. | 2002
- 258
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Development and performance of imaging radiation detector based on semi-insulating GaAs: Application in /spl gamma/-ray computer tomograph for industrial purposesDubecky, F. / Zat'ko, B. / Necas, V. / Scepko, P. / Gajtanska, M. / Sekacova, M. / Perd'ochova, A. / Sekerka, V. / Huran, J. / Bohacek, P. et al. | 2002
- 265
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Role of Semi-insulating GaAs Detector Topology in Detection PerformancePerd ochova, A. / Dubecky, F. / Anh, T. L. / Necas, V. / Bohacek, P. / Sekacova, M. / IEEE / Slovak Academy of Sciences et al. | 2002
- 265
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The role of semi-insulating GaAs detector topology in detection performancePerd'ochova, A. / Dubecky, F. / Ly Anh, T. / Necas, V. / Bohacek, P. / Sekacova, M. et al. | 2002
- 269
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Temperature influence on the spectrometric performances of the radiation detector based on semi-insulating GaAsZat'ko, B. / Dubecky, F. / Necas, V. et al. | 2002
- 273
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InP detectors for solar neutrino spectrometerPelfer, P.G. / Owens, A. et al. | 2002
- 280
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Evaluation of GaAs and InP MSM detectors for detection of pulsed X-ray emission from laser plasmasRyc, L. / Dubecky, F. / Pfeifer, M. / Pura, B. / Riesz, F. / Slysz, W. et al. | 2002
- 280
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Evaluation of GaAs and InP MSM Detectors for Detection of Pulsed X-ray Emission from Laser PlasmaRyc, L. / Dubecky, F. / Pfeifer, M. / Pura, B. / Riesz, F. / Slysz, W. / IEEE / Slovak Academy of Sciences et al. | 2002
- 284
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Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETsMitani, Y. / Wakabayashi, A. / Horio, K. et al. | 2002
- 288
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The Fabrication and Characterization of Metal-Oxide-Semiconductor Field-Effect Transistors and Gated Diodes Using (Ba~0~.~5,Sr~0~.~5)TiO~3 Gate DielectricLiu, Y.-R. / Lee, J. Y.-m. / IEEE / Slovak Academy of Sciences et al. | 2002
- 288
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The fabrication and characterization of metal-oxide semiconductor field-effect transistors and gated diodes using (Ba/sub 0.5/,Sr/sub 0.5)TiO/sub 3/ gate dielectricYu-Rung Liu, / Joseph Ya-min Lee, et al. | 2002
- 292
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Gamma-radiation hardness of bulk semi-insulating GaAsLy Anh, T. / Perd'ochova, A. / Necas, V. / Bohacek, P. / Sekacova, M. et al. | 2002
- 296
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Author index| 2002
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2002 12th International Conference on Semiconducting and Insulating Materials. SIMC-XII-2002 (Cat. No.02CH37343)| 2002