Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration (English)
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In:
2021 IEEE International Reliability Physics Symposium (IRPS)
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1-5
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2021
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ISBN:
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ISSN:
- Conference paper / Electronic Resource
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Title:Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration
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Contributors:Frutuoso, T. Mota ( author ) / Lugo-Alvarez, J. ( author ) / Garros, X. ( author ) / Brunet, L. ( author ) / Lacord, J. ( author ) / Gerrer, L. ( author ) / Casse, M. ( author ) / Catapano, E. ( author ) / Fenouillet-Beranger, C. ( author ) / Andrieu, F. ( author )
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Published in:
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Publisher:
- New search for: IEEE
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Publication date:2021-03-01
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Size:857566 byte
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ISBN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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A Reliable Triple-Level Operation of Resistive-Gate Flash Featuring Forming-Free and High Immunity to Sneak PathYang, W. Y. / Hsieh, E. R. / Cheng, C. H. / Chen, B. Y. / Li, K. S. / Chung, Steve S. et al. | 2021
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Considerations in High Voltage Lateral ESD PNP DesignShah, Milan / Zhou, Yujie / LaFonteese, David / Rosenbaum, Elyse et al. | 2021
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On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devicesPutcha, V. / Cheng, L. / Alian, A. / Zhao, M. / Lu, H. / Parvais, B. / Waldron, N. / Linten, D. / Collaert, N. et al. | 2021
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Transient Investigation of Metal-oxide based, CMOS-compatible ECRAMSolomon, Paul M. / Bishop, Douglas M. / Todorov, Teodor K. / Dawes, Simon / Farmer, Damon B. / Copel, Matthew / Lee, Ko-Tao / Collins, John / Rozen, John et al. | 2021
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Monitoring Setup and Hold Timing LimitsCacho, F. / Angbel, L. / Federspiel, X. et al. | 2021
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Single Event Hard Error due to Terrestrial RadiationHan, Jin-Woo / Meyyappan, M. / Kim, Jungsik et al. | 2021
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Assessing the pre-breakdown carriers' multiplication in SiC power MOSFETs by soft gamma radiation and its correlation to the Terrestrial Cosmic Rays failure rate data as measured by neutron irradiationCiappa, Mauro / Pocaterra, Marco et al. | 2021
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Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETsZhu, Shengnan / Liu, Tianshi / White, Marvin H. / Agarwal, Anant K. / Salemi, Arash / Sheridan, David et al. | 2021
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“Pinch to Detect”: A Method to Increase the Number of Detectable RTN Traps in Nano-scale MOSFETsTataridou, Angeliki / Ghibaudo, Gerard / Theodorou, Christoforos et al. | 2021
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Excellent Reliability of Xtacking™ Bonding InterfaceOuyang, Yan / Yang, Suhui / Yin, Dandan / Huang, Xiang / Wang, Zhiqiang / Yang, Shengwei / Han, Kun / Xia, Zhongyi et al. | 2021
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Chip to Package Interaction Risk Assessment of FCBGA Devices using FEA Simulation, Meta-Modeling and Multi-Objective Genetic Algorithm Optimization TechniqueLee, Moon Soo / Baick, Inhak / Kim, Min / Kwon, Seo Hyun / Yeo, Myeong Soo / Rhee, Hwasung / Lee, Euncheol et al. | 2021
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Robust Brain-Inspired Computing: On the Reliability of Spiking Neural Network Using Emerging Non-Volatile SynapsesWei, Ming-Liang / Amrouch, Hussam / Sung, Cheng-Lin / Lue, Hang-Ting / Yang, Chia-Lin / Wang, Keh-Chung / Lu, Chih-Yuan et al. | 2021
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Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current densityPalanisamy, S. / Basler, T. / Lutz, J. / Kunzel, C. / Wehrhahn-Kilian, L. / Elpelt, R. et al. | 2021
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Design Optimization of MV-NMOS to Improve Holding Voltage of a 28nm CMOS Technology ESD Power ClampKaralkar, Sagar P / Ganesan, Vishal / Paul, Milova / Hwang, KyongJin / Gauthier, Robert et al. | 2021
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Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memoriesMulaosmanovic, Halid / Lomenzo, Patrick D. / Schroeder, Uwe / Slesazeck, Stefan / Mikolajick, Thomas / Max, Benjamin et al. | 2021
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Impacts of Depth and Lateral Profiles of Fluorine Atoms in Gate Oxide Films on ReliabilityFujii, Shuntaro / Hamada, Shohei / Yagi, Tatsushi / Maru, Isao / Katsuki, Shogo / Sakamoto, Toshiro / Okamoto, Atsushi / Morita, Soichi / Miyazaki, Tsutomu et al. | 2021
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A Study on System Level UFS M-PHY Reliability Measurement Method Using RDVSYang, NamHyuk / Kim, JinHwan / Park, GeonGu / Kwon, ChulHyuk / Lee, SeungTaek / Pae, SangWoo / Kim, HooSung / Hwang, SangWon et al. | 2021
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Low-Bit Precision Neural Network Architecture with High Immunity to Variability and Random Telegraph Noise based on Resistive MemoriesZanotti, Tommaso / Puglisi, Francesco Maria / Pavan, Paolo et al. | 2021
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Variability sources and reliability of 3D — FeFETsPesic, Milan / Beltrando, Bastien / Padovani, Andrea / Gangopadhyay, Shruba / Kaliappan, Muthukumar / Haverty, Michael / Villena, Marco A. / Piccinini, Enrico / Bertocchi, Matteo / Chiang, Tony et al. | 2021
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Drastic reliability improvement using H2O2/UV treatment of HfO2 for heterogeneous integrationKim, S.M. / Nyugen, T.M.H. / Oh, J.W. / Lee, Y.S. / Kang, S.C. / Lee, H.I. / Kim, C.H. / Some, S. / Hwang, H.J. / Lee, B.H. et al. | 2021
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HCI Temperature sense effect from 180nm to 28nm nodesFederspiel, X. / Camara, A. / Michard, A. / Diouf, C. / Cacho, F. et al. | 2021
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Effect of High Temperature on Recovery of Hot Carrier Degradation of scaled nMOSFETs in DRAMSon, D. / Kim, G.-J. / Kim, J. / Lee, N. / Kim, K. / Pae, S. et al. | 2021
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Stochastic and Deterministic Modeling Frameworks for Time Kinetics of Gate Insulator Traps During and After Hot Carrier Stress in MOSFETsKumar, Satyam / Samadder, Tarun / Thakor, Karansingh / Sharma, Uma / Mahapatra, Souvik et al. | 2021
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[IRPS Title Page]| 2021
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Product Lifetime Estimation in 7nm with Large data of Failure Rate and Si-Based Thermal Coupling ModelAhn, Jae-Gyung / Nathanael, Rhesa / Chen, I-Ru / Yeh, Ping-Chin / Chang, Jonathan et al. | 2021
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Reliability-Conscious MOSFET Compact Modeling with Focus on the Defect-Screening Effect of Hot-Carrier InjectionVyas, Pratik B. / Pimparkar, Ninad / Tu, Robert / Arfaoui, Wafa / Bossu, Germain / Siddabathula, Mahesh / Lehmann, Steffen / Goo, Jung-Suk / Icel, Ali B. et al. | 2021
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Novel Weight Mapping Method for Reliable NVM based Neural NetworkHan, L.X. / Xiang, Y.C. / Huang, P. / Yu, G. H. / Han, R. Z. / Liu, X. Y. / Kang, J. F. et al. | 2021
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Study of the microstructure and the mechanical properties of Pb-2.5Ag-2Sn solder jointKariya, K. / Yumiba, A. / Ukita, M. / Ikeda, T. / Koganemaru, M. / Masago, N. et al. | 2021
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A BSIM-Based Predictive Hot-Carrier Aging Compact ModelXiang, Y. / Tyaginov, S. / Vandemaele, M. / Wu, Z. / Franco, J. / Bury, E. / Truijen, B. / Parvais, B. / Linten, D. / Kaczer, B. et al. | 2021
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Progress and Current Topics of JEDEC JC-70.1 Power GaN Device Quality and Reliability Standards Activity: Or: What is the Avalanche capability of your GaN Transistor?McDonald, Tim / Butler, Stephanie Watts et al. | 2021
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Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETsCioni, M. / Bertacchini, A. / Mucci, A. / Verzellesi, G. / Pavan, P. / Chini, A. et al. | 2021
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Reliability Characterization of a Flexible Interconnect for Cryogenic and Quantum ApplicationsSchmidgall, Emma R. / Griggio, Flavio / Thiel, George H. / Peek, Sherman E. / Yelamanchili, Bhargav / Shah, Archit / Gupta, Vaibhav / Sellers, John A. / Hamilton, Michael C. / Tuckerman, David B. et al. | 2021
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Robust RRAM-based In-Memory Computing in Light of Model StabilityKrishnan, Gokul / Sun, Jingbo / Hazra, Jubin / Du, Xiaocong / Liehr, Maximilian / Li, Zheng / Beckmann, Karsten / Joshi, Rajiv V. / Cady, Nathaniel C. / Cao, Yu et al. | 2021
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Time series modeling of the cycle-to-cycle variability in h-BN based memristorsRoldan, J. B. / Maldonado, D. / Alonso, F. J. / Roldan, A. M. / Hui, F. / Shi, Y. / Jimenez-Molinos, F. / Aguilera, A.M. / Lanza, M. et al. | 2021
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Embedded emerging memory technologies for neuromorphic computing: temperature instability and reliabilityChang, Yao-Feng / Karpov, Ilya / Hopkins, Reed / Janosky, David / Medeiros, Jacob / Sherrill, Benjamin / Zhang, Jiahan / Huang, Yifu / Pramanik, Tanmoy / Chen, Albert et al. | 2021
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Time Dependent Variability in Advanced FinFET Technology for End-of-Lifetime Reliability PredictionJiang, Hai / Kim, Jinju / Choi, Kihyun / Shim, Hyewon / Sagong, Hyunchul / Park, Junekyun / Rhee, Hwasung / Lee, Euncheol et al. | 2021
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[Copyright notice]| 2021
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Off-state TDDB in FinFET Technology and its Implication for Safe Operating AreaToledano-Luque, M. / Paliwoda, P. / Nour, M. / Kauerauf, T. / Min, B. / Bossu, G. / Siddabathula, M. / Nigam, T. et al. | 2021
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Gate Driver Protection Methods for SiC MOSFET Short Circuit TestingNevarez, Jairo / Olmedo, Anthony / Williams, Rachel / Pechnikova, Polina et al. | 2021
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New Developments in SiGe HBT Reliability for RF Through mmW CircuitsCressler, John D. et al. | 2021
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Characterization of Early Breakdown of SiC MOSFET Gate Oxide by Voltage Ramp TestsZheng, Yongju / Potera, Rahul / Witt, Tony et al. | 2021
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Accuracy of Thermal Analysis for SiC Power DevicesRace, S. / Ziemann, T. / Tiwari, S. / Kovacevic-Badstuebner, I. / Grossner, U. et al. | 2021
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Failure Mechanisms of Cascode GaN HEMTs Under Overvoltage and Surge Energy EventsSong, Qihao / Zhang, Ruizhe / Kozak, Joseph P. / Liu, Jingcun / Li, Qiang / Zhang, Yuhao et al. | 2021
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Impact of Multilevel Retention Characteristics on RRAM based DNN Inference EngineShim, Wonbo / Meng, Jian / Peng, Xiaochen / Seo, Jae-sun / Yu, Shimeng et al. | 2021
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Nanosecond-scale and self-heating free characterization of advanced CMOS transistors utilizing wave reflectionLiu, Wei / Ding, Yaru / Zhao, Liang / Zhao, Yi et al. | 2021