Challenges of testing high-volume, low-cost 8-bit microcontrollers (English)
- New search for: Stout, M.
- New search for: Tumin, K.
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- New search for: Stout, M.
- New search for: Tumin, K.
- New search for: Vargas, C.
- New search for: Gotchall, B.
In:
2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual.
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366-371
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2003
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ISBN:
- Conference paper / Electronic Resource
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Title:Challenges of testing high-volume, low-cost 8-bit microcontrollers
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Contributors:
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Published in:
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Publisher:
- New search for: IEEE
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Publication date:2003-01-01
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Size:464810 byte
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ISBN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Effect of gate oxide breakdown on RF device and circuit performanceHong Yang, / Yuan, J.S. / Enjun Xiao, et al. | 2003
- 5
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On the degradation of p-MOSFETs in analog and RF circuits under inhomogeneous negative bias temperature stressSchlunder, C. / Brederlow, R. / Ankele, B. / Lill, A. / Goser, K. / Thewes, R. et al. | 2003
- 11
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Modeling and experimental verification of the effect of gate oxide breakdown on CMOS invertersRodriguez, R. / Stathis, J.H. / Linder, B.P. et al. | 2003
- 17
-
Behavior of NBTI under AC dynamic circuit conditionsAbadeer, W. / Ellis, W. et al. | 2003
- 23
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Stress polarity dependence of degradation and breakdown of SiO/sub 2//high-k stacksDegrave, R. / Kauerauf, T. / Kerber, A. / Cartier, E. / Govoreanu, B. / Roussel, P. / Pantisano, L. / Blomme, P. / Kaczer, B. / Groeseneken, G. et al. | 2003
- 29
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Accurate reliability evaluation of non-uniform ultrathin oxynitride and high-k layersRoussel, P. / Degraeve, R. / Kerber, A. / Pantisano, L. / Groeseneken, G. et al. | 2003
- 34
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Novel dielectric breakdown model of Hf-silicate with high temperature annealingYamaguchi, T. / Ino, T. / Satake, H. / Fukushima, N. et al. | 2003
- 41
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Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectricsKerber, A. / Cartier, E. / Pantisano, L. / Rosmeulen, M. / Degraeve, R. / Kauerauf, T. / Groeseneken, G. / Maes, H.E. / Schwalke, U. et al. | 2003
- 46
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Dynamic reliability characteristics of ultra-thin HfO/sub 2/Kim, Y.H. / Onishi, K. / Kang, C.S. / Choi, R. / Cho, H.-J. / Krishnan, S. / Shahriar, A. / Lee, J.C. et al. | 2003
- 51
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Neutron-induced latchup in SRAMs at ground levelDodd, P.E. / Shaneyfelt, M.R. / Schwank, J.R. / Hash, G.L. et al. | 2003
- 56
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Measuring the width of transient pulses induced by ionising radiationNicolaidis, M. / Perez, R. et al. | 2003
- 60
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A systematic approach to SER estimation and solutionsNguyen, H.T. / Yagil, Y. et al. | 2003
- 71
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Contribution of device simulation to SER understandfngPalau, J.-M. / Calvet, M.-C. / Dodd, P.E. / Sexton, F.W. / Roche, P. et al. | 2003
- 76
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Latchup in CMOSMorris, W. et al. | 2003
- 85
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A new I/O signal latchup phenomenon in voltage tolerant ESD protection circuitsSalcedo-Suner, J. / Cline, R. / Duvvury, C. / Cadena-Hernandez, A. / Ting, L. / Schichl, J. et al. | 2003
- 92
-
New observance and analysis of various guard-ring structures on latch-up hardness by backside photo emission imageLiao, S. / Niou, C. / Chien, K. / Guo, A. / Dong, W. / Huang, C. et al. | 2003
- 99
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Transmission line pulse picosecond imaging circuit analysis methodology for evaluation of ESD and latchupWeger, A. / Voldman, S. / Stellari, F. / Peilin Song, / Pia Sanda, / McManus, M. et al. | 2003
- 105
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A device level negative feedback in the emitter line of SCR-structures as a method to realize latch-up free ESD protectionConcannon, A. / Vashchenko, V.A. / ter Beek, M. / Hopper, P. et al. | 2003
- 112
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A 90 nm CMOS technology with modular quadruple gate oxides for advanced SoC applicationsMirabedini, M.R. / Gopinath, V.P. / Kamath, A. / Lee, M.Y. / Hsia, W.J. / Hornback, V. / Le, Y. / Badowski, A. / Baylis, B. / Li, E. et al. | 2003
- 116
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Detailed investigation of the transient local tunneling in gate oxidesBeug, M.F. / Ferretti, R. / Hofmann, K.R. et al. | 2003
- 121
-
Abnormal gate oxide thickening at active edge with SiN-linered shallow trench isolationKong-Soo Lee, / Jae-Jong Ban, / Seung-Mok Shin, / Ki-Hyun Hwang, / Seok-Woo Nam, / Hyeon-Deok Lee, / Chang-Lyong Song, et al. | 2003
- 126
-
Using the temperature coefficient of the resistance (TCR) as early reliability indicator for stressvoiding risks in Cu interconnectsvon Glasow, A. / Fischer, A.H. / Steinlesberger, G. et al. | 2003
- 132
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A study in flip-chip UBM/bump reliability with effects of SnPb solder compositionWu, J.D. / Zheng, P.J. / Lee, C.W. / Hung, S.C. / Lee, J.J. et al. | 2003
- 140
-
Line depletion electromigration characteristics of Cu interconnectsBaozhen Li, / Sullivan, T.D. / Lee, T.C. et al. | 2003
- 146
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The influence of the SiN cap process on the electromigration and stressvoiding performance of dual damascene Cu interconnectsvon Glasow, A. / Fischer, A.H. / Bunel, D. / Friese, G. / Hausmann, A. / Heitzsch, O. / Hommel, M. / Kriz, J. / Penka, S. / Raffin, P. et al. | 2003
- 151
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Electromigration improvement with PDL TiN(Si) barrier in copper dual damascene structuresAlers, G.B. / Vijayendran, A. / Gillespie, P. / Chen, L. / Cox, H. / Lam, K. / Augur, R. / Shannon, K. / Pfeifer, S. / Danek, M. et al. | 2003
- 156
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Stress-induced voiding and its geometry dependency characterizationDoong, K.Y.Y. / Wang, R.C.J. / Lin, S.C. / Hung, L.J. / Chiu, C.C. / Su, D. / Wu, K. / Young, K.L. / Peng, Y.K. et al. | 2003
- 161
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On the use of highly accelerated electromigration tests (SWEAT) on copperZitzelsberger, A. / Bauer, R. / von Hagen, J. / Penka, S. / Pietsch, A. / Ungar, F. / Walter, W. et al. | 2003
- 166
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Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectricsOgawa, E.T. / Jinyoung Kim, / Haase, G.S. / Mogul, H.C. / McPherson, J.W. et al. | 2003
- 173
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The effect of low-k ILD on the electromigration reliability of Cu interconnects with different line lengthsHau-Riege, C.S. / Marathe, A.P. / Van Pham, et al. | 2003
- 178
-
Evidence for hydrogen-related defects during NBTl stress in p-MOSFETsHuard, V. / Monsieur, F. / Ribes, G. / Bruyere, S. et al. | 2003
- 183
-
Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectricsTsujikawa, S. / Mine, T. / Watanabe, K. / Shimamoto, Y. / Tsuchiya, R. / Ohnishi, K. / Onai, T. / Yugami, J. / Kimura, S. et al. | 2003
- 189
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Collapse of MOSFET drain current after soft breakdown and its dependence on the transistor aspect ratio W/LCester, A. / Cimino, S. / Paccagnella, A. / Ghidini, G. / Guegan, G. et al. | 2003
- 196
-
Dynamic NBTI of PMOS transistors and its impact on device lifetimeChen, G. / Chuah, K.Y. / Li, M.F. / Chan, D.S.H. / Ang, C.H. / Zheng, J.Z. / Jin, Y. / Kwong, D.L. et al. | 2003
- 203
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An improved interface characterization technique for a full-range profiling of oxide damage in ultra-thin gate oxide CMOS devicesChen, S.-J. / Lin, T.-C. / Lo, D.-K. / Yang, J.-J. / Chung, S.S. / Kao, T.-Y. / Wang, C.-J. / Peng, Y.-K. et al. | 2003
- 208
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Evaluation of the positive biased temperature stress stability in HfSiON gate dielectricsShanware, A. / Visokay, M.R. / Chambers, J.J. / Rotondaro, A.L.P. / Bu, H. / Bevan, M.J. / Khamankar, R. / Aur, S. / Nicollian, P.E. / McPherson, J. et al. | 2003
- 214
-
Competing hot carrier degradation mechanisms in lateral n-type DMOS transistorsMoens, P. / Van den Bosch, G. / Groeseneken, G. et al. | 2003
- 222
-
ESD challenges in magnetic recording: past, present and futureWallash, A. et al. | 2003
- 229
-
Impact of scaling on the high current behavior of RF CMOS technologyBoselli, G. / Reddy, V. / Duvvury, C. et al. | 2003
- 235
-
Internal behavior of BCD ESD protection devices under very-fast TLP stressBlaho, M. / Pogany, D. / Gornik, E. / Zullino, L. / Morena, E. / Stella, R. / Andreini, A. et al. | 2003
- 241
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Moving current filaments in ESD protection devices and their relation to electrical characteristicsPogany, D. / Bychikhin, S. / Gornik, E. / Denison, M. / Jensen, N. / Groos, G. / Stecher, M. et al. | 2003
- 249
-
Modeling of temperature dependent contact resistance for analysis of ESD reliabilityKwang-Hoon Oh, / Jung-Hoon Chun, / Banerjee, K. / Duvvury, C. / Dutton, R.W. et al. | 2003
- 256
-
Dynamic substrate resistance snapback triggering of ESD protection devicesVassilev, V. / Groeseneken, G. / Steyaert, M. / Maes, H. et al. | 2003
- 261
-
Increasing the ESD protection capability of over-voltage NMOS structures by comb-ballasting region designVashchenko, V.A. / Concannon, A. / ter Beek, M. / Hopper, P. et al. | 2003
- 269
-
The failure mechanism of high voltage tolerance IO buffer under ESDJian-Hsing Lee, / Shih, J.R. / Wu, Y.H. / Ong, T.C. et al. | 2003
- 277
-
Leakage behavior and reliability assessment of tantalum oxide dielectric MIM capacitorsRemmel, T. / Ramprasad, R. / Walls, J. et al. | 2003
- 282
-
A physical model of time-dependent dielectric breakdown in copper metallizationWen Wu, / Xiaodong Duan, / Yuan, J.S. et al. | 2003
- 287
-
Cu-ion-migration phenomena and its influence on TDDB lifetime in Cu metallizationNoguchi, J. / Miura, N. / Kubo, M. / Tamaru, T. / Yamaguchi, H. / Hamada, N. / Makabe, K. / Tsuneda, R. / Takeda, K. et al. | 2003
- 293
-
Reliability and electric properties for PECVD a-SiN/sub x/:H films with an optical band-gap ranging from 2.5 to 5.38 eVvan Delden, M.H.W.M. / van der Wel, P.J. et al. | 2003
- 298
-
HSG storage capacitor dielectric reliability of 0.13 /spl mu/m embedded DRAM CMOS technologyBruyere, S. / Roy, D. / Jacques, D. / Boccaccio, C. et al. | 2003
- 303
-
New process damage during the etching of small-contact on long floating conductor layerJinkee Choi, / Donggun Park, / Hongjoon Moon, / Sanghyok Lee, / Hyeongchan Ko, / Kihoon Yang, / Wonshik Lee, et al. | 2003
- 307
-
NMOS predope enhanced off-state leakage currentLim, K.Y. / Lee, J. / Quek, E. et al. | 2003
- 313
-
1/f noise degradation caused by Fowler-Nordheim tunneling stress in MOSFETsToita, M. / Sugawa, S. / Teramoto, A. / Akaboshi, T. / Imai, H. / Ohmi, T. et al. | 2003
- 318
-
Semiconductor reliability challenges from the fabless company perspectiveKole, T.M. et al. | 2003
- 320
-
Current collapse induced in AlGaN/GaN HEMTs by short-term DC bias stressMittereder, J.A. / Binari, S.C. / Klein, P.B. / Roussos, J.A. / Katzer, D.S. / Storm, D.F. / Koleske, D.D. / Wickenden, A.E. / Henry, R.L. et al. | 2003
- 324
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Bias acceleration model of drain resistance degradation in InP-based HEMTsFukai, Y.K. / Sugitani, S. / Enoki, T. / Kitabayashi, H. / Makimura, T. / Yamane, Y. / Muraguchi, M. et al. | 2003
- 329
-
Reliability characteristics of pHEMT resulting from electron interaction with interface states under the gateMil'shtein, S. / Ersland, P. / Gil, C. / Somisetty, S. et al. | 2003
- 332
-
SiGe HBT performance and reliability trends through f/sub T/ of 350 GHzFreeman, G. / Jae-Sung Rieh, / Jagannathan, B. / Zhijian Yang, / Guarin, F. / Joseph, A. / Ahlgren, D. et al. | 2003
- 339
-
Avalanche current induced hot carrier degradation in 200 GHz SiGe heterojunction bipolar transistorsZhijian Yang, / Guarin, F. / Hostetter, E. / Freeman, G. et al. | 2003
- 344
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Characterization of light emission from SiGe heterojunction bipolar transistor for photon emission microscopy applicationsPolonsky, S. / Talalaevskii, A. / McManus, M. et al. | 2003
- 347
-
The influence of process and design of subcollectors on the ESD robustness of ESD structures and silicon germanium heterojunction bipolar transistors in a BiCMOS SiGe technologyVoldman, S.H. / Lanzerotti, L. / Ronan, B. / St Onge, S. / Dunn, J. et al. | 2003
- 357
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Investigation of ESD devices in 0.18 /spl mu/m SiGe BiCMOS processShiao-Shien Chen, / Tung-Yang Chen, / Tien-Hao Tang, / Tsun-Lai Hsu, / Hua-Chou Tseng, / Jen-Kon Chen, / Chiu-Hsiang Chou, et al. | 2003
- 361
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DRAM reliability characterization by using dynamic operation stress in wafer burn-in modeIl-Gweon Kim, / Se-Kyeong Choi, / Jin-Hyeok Choi, / Joo-Seog Park, et al. | 2003
- 366
-
Challenges of testing high-volume, low-cost 8-bit microcontrollersStout, M. / Tumin, K. / Vargas, C. / Gotchall, B. et al. | 2003
- 372
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Correlation of the V/sub T/ drift in a-Si:H TFT to the optically observed flicker increase in AMLCDChung-Che Huang, / Constable, J. / Yost, B. / Greene, R. et al. | 2003
- 378
-
Reliability qualification of a smart power technology for high temperature application based on physics-of-failure and risk & opportunity assessmentPreussger, A. / Kanert, W. / Gerling, W. et al. | 2003
- 385
-
Product level verification of gate oxide reliability projections using DRAM chipsVollertsen, R.-P. / Nierle, K. / Wu, E.Y. / Wen, S. et al. | 2003
- 391
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Investigation of wafer level burn-in to SoC memory: 1TRAMPan, Y.L. / Chen, S.H. / Lu, C.H. / Wang, J.J. et al. | 2003
- 395
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Practical WLRC methodology & applications in a wafer foundryChien, W.T.K. / Shunwang Chiang, / Summer Tseng, / Huang, C.H.J. / Yang, K. / Wang, W. / Zhou, J. et al. | 2003
- 402
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Growth and scaling of oxide conduction after breakdownLinder, B.P. / Stathis, J.H. / Frank, D.J. / Lombardo, S. / Vayshenker, A. et al. | 2003
- 406
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A phenomenological theory of correlated multiple soft-breakdown events in ultra-thin gate dielectricsAlam, M.A. / Smith, R.K. et al. | 2003
- 412
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Analysis of quantum yield in n-channel MOSFETsSpinelli, A.S. / Ielmini, D. / Lacaita, A.L. / Sebastian, A. / Ghidini, G. et al. | 2003
- 417
-
Temperature dependence and conduction mechanism after analog soft breakdownNigam, T. / Martin, S. / Abusch-Magder, D. et al. | 2003
- 424
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Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxidesMonsieur, F. / Vincent, E. / Ribes, G. / Huard, V. / Bruyere, S. / Roy, D. / Pananakakis, G. / Ghibaudo, G. et al. | 2003
- 432
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Soft breakdown in thin gate oxide - a measurement artifactCheung, K.P. et al. | 2003
- 437
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Negative substrate bias enhanced breakdown hardness in ultra-thin oxide pMOSFETsTahui Wang, / Tsai, C.W. / Chen, M.C. / Chan, C.T. / Chiang, H.K. et al. | 2003
- 442
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Wheatstone bridge method for electromigration study of solder balls in flip-chip packagesMin Ding, / Matsuhashi, H. / Ho, P.S. / Marathe, A. / Master, R. / Van Pham, et al. | 2003
- 447
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Board level solder reliability vs. ramp rate & dwell time during temperature cyclingZhai, C.J. / Sidharth, / Blish, R. et al. | 2003
- 452
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A simple model for the mode II popcorn effect in thin plastic IC packagesAlpern, P. / Lee, K.C. et al. | 2003
- 458
-
Advanced getter solutions at wafer level to assure high reliability to the last generations MEMSMoraja, M. / Amiotti, M. et al. | 2003
- 460
-
Instrumentation for genome analysis (and beyond) based on the TI Digital Micromirror DeviceGarner, H.R. et al. | 2003
- 463
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Effect of Al/sub 2/O/sub 3/ ALD nanocoatings on the thermo-mechanical behavior of Au/Si MEMS structuresGall, K. / Dunn, M.L. / Hulse, M. / Finch, D. / George, S.M. et al. | 2003
- 473
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Effects of operating conditions on DMD hinge memory lifetimeSontheimer, A.B. / Mehrl, D.J. et al. | 2003
- 478
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Reliability of MEMS-based mass-flow controllers for semiconductor processingLawrence, E.D. / Henning, A.K. et al. | 2003
- 484
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On-chip monitoring of MEMS gear motionTanner, D.M. / Swanson, S.E. / Walraven, J.A. / Dohner, J.L. et al. | 2003
- 491
-
Variable stress-induced leakage current and analysis of anomalous charge loss for flash memory applicationYamada, R. / King, T.J. et al. | 2003
- 497
-
Degradation of tunnel oxide by FN current stress and its effects on data retention characteristics of 90 nm NAND flash memory cellsJae-Duk Lee, / Jeong-Hyuk Choi, / Donggun Park, / Kinam Kim, et al. | 2003
- 502
-
Data retention, endurance and acceleration factors of NROM devicesJanai, M. et al. | 2003
- 506
-
Study of data retention for nanocrystal Flash memoriesCompagnoni, C.M. / Ielmini, D. / Spinelli, A.S. / Lacaita, A.L. / Previtali, C. / Gerardi, C. et al. | 2003
- 513
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An enhanced erase mechanism in flash memory and its implication on endurance reliabilityTseng, J.M.Z. / Larsen, B.J. / Xiao, Y. / Yount, J. / Randazzo, T. / Shore, S. / Miller, G. / Erickson, D.A. et al. | 2003
- 518
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Effect of programming biases on the reliability of CHE and CHISEL flash EEPROMsMohapatra, N.R. / Mahapatra, S. / Rao, V.R. / Shukuri, S. / Bude, J. et al. | 2003
- 523
-
Lifetime prediction and design of reliability tests for high-power devices in automotive applicationsCiappa, M. / Carbognani, F. / Cova, P. / Fichtner, W. et al. | 2003
- 529
-
High resolution backside fault isolation technique using directly forming Si substrate into solid immersion lensKoyama, T. / Yoshida, E. / Komori, J. / Mashiko, Y. / Nakasuji, T. / Katoh, H. et al. | 2003
- 536
-
Reliability issues and advanced failure analysis deprocessing techniques for copper/low-k technologyHuixian Wu, / Cargo, J. / Peridier, C. / Serpiello, J. et al. | 2003
- 545
-
Automated PICA transistor channeling and spatial-temporal photon correlation for faster IC diagnosisDesplats, R. / Beaudoin, F. / Faggion, G. / Jesson, O. / Perdu, P. / Leibowitz, M. / Lundquist, T. / Shah, K. et al. | 2003
- 553
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Laser interaction with SiCr thin film resistors: "the bubble theory"Coyne, E. et al. | 2003
- 559
-
A new approach to detect small-sized oxygen precipitates in Si wafers using reactive ion etchingNakashima, K. / Yoshida, T. / Watanabe, Y. / Mitsushima, Y. et al. | 2003
- 564
-
Consistency of optical data from PICALundquist, T. / Le Coupanec, P. / Abraham, A. / Ng, W. et al. | 2003
- 570
-
A method to comprehend the impact of interconnect coupling effects on gate oxide reliabilityMutlu, A.A. / Aminzadeh, P. et al. | 2003
- 572
-
ARET for system-level IC reliability simulationXiangdong Xuan, / Chatterjee, A. / Singh, A.D. et al. | 2003
- 574
-
Drain avalanche breakdown and gate instabilities in 4H-SiC MESFETsHongliang Lv, / Yimen Zhang, / Yuming Zhang, et al. | 2003
- 576
-
A study on GaAs FET's failure mechanism and experimental technology of rapid evaluation of reliabilityLi Zhiguo, / Song Zengchao, / Cheng Yaohai, / Xuan Jiuxia, / Zhou Zhongrong, / Zhang Wanrong, / Sun Dapeng, / Gao Guangbo, et al. | 2003
- 578
-
A proper lifetime-prediction method of PMOSFET with 1.1 nm gate dielectrics in the lower testing voltage regionTamura, N. / Kase, M. et al. | 2003
- 580
-
Experimental study and modeling of the temperature dependence of soft breakdown conduction in ultrathin gate oxidesAvellan, A. / Miranda, E. / Sell, B. / Krautschneider, W. et al. | 2003
- 582
-
Voltage-driven distribution of gate oxide breakdownHiraiwa, A. / Sakai, S. / Ishikawa, D. et al. | 2003
- 584
-
DBIE shape and hardness dependence on gate oxide breakdown location in MOSFET channelPey, K.L. / Tung, C.H. / Radhakrishnan, M.K. / Tang, L.J. / Lin, W.H. et al. | 2003
- 586
-
Defect passivation and dark count in Geiger-mode avalanche photodiodesJackson, J.C. / Healy, G. / Kelleher, A.-M. / Alderman, J. / Donnelly, J. / Hurley, P.K. / Morrison, A.P. / Mathewson, A. et al. | 2003
- 588
-
Localization and analysis of functional failures in deep submicron advanced ASIC productsRubin, M. et al. | 2003
- 590
-
FIB-induced deposition of conducting material with intermediate resistivity for design debuggingGu, G.Y. / Bassom, N.J. / Casey, J.D. / Scipioni, L. / Saxonis, A. / Huynh, C. et al. | 2003
- 592
-
Temperature dependent current and charge trapping in thick SiO/sub 2//ZrO/sub 2/ stacksBlomme, P. / Govoreanu, B. / Van Houdt, J. / De Meyer, K. et al. | 2003
- 594
-
Effect of current distribution on the reliability of multi-terminal Cu dual-damascene interconnect treesChee Lip Gan, / Thompson, C.V. / Kin Leong Pey, / Wee Kiong Choi, / Choon Wai Chang, / Qiang Guo, et al. | 2003
- 596
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Real case studies of failure mechanisms for Cu trench electromigrationLai, J.B. / Yang, J.L. / Yang, H.W. / Hwang, R.L. / Su, D. / Chuang, H. / Huang, Y.S. et al. | 2003
- 598
-
TDDB and voltage-ramp reliability of SiC-base dielectric diffusion barriers in Cu/low-k interconnectsJow, K. / Alers, G.B. / Sanganeria, M. / Harm, G. / Fu, H. / Tang, X. / Kooi, G. / Ray, G.W. / Danek, M. et al. | 2003
- 600
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Defect based testing with a new ISB current strategyLisenker, B. et al. | 2003
- 602
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Wafer level reliability monitoring strategy of an advanced multi-process CMOS foundryScarpa, A. / Tao, G. / Kuper, F.G. et al. | 2003
- 604
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Process qualification strategy for advanced embedded non-volatile memory technology - the Philips 0.18 /spl mu/m embedded flash caseGuoqiao Tao, / Scarpa, A. / van Dijk, K. / Kuper, F.G. et al. | 2003
- 606
-
Transient effects and characterization methodology of negative bias temperature instability in pMOS transistorsErshov, M. / Lindley, R. / Saxena, S. / Shibkov, A. / Minehane, S. / Babcock, J. / Winters, S. / Karbasi, H. / Yamashita, T. / Clifton, P. et al. | 2003
- 608
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Design optimization of N-LDMOS transistor arrays for hot carrier lifetime enhancementBrisbin, D. / Strachan, A. / Chaparala, P. et al. | 2003
- 610
-
Time and voltage dependence of degradation and recovery under pulsed negative bias temperature stressUsui, H. / Kanno, M. / Morikawa, T. et al. | 2003
- 612
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The study of compressive and tensile stress on MOSFET's I-V, C-V characteristics and it's impacts on hot carrier injection and negative bias temperature instabilityShih, J.R. / Wang, J.J. / Ken, W. / Yeng Peng, / Yue, J.T. et al. | 2003
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2003 IEEE International Reliability Physics Symposium Proceedings 41st Annual (Cat. No.03CH37400)| 2003