Wafer-Level Integration of an Advanced Logic-Memory System Through the Second-Generation CoWoS Technology (English)
Free access
- New search for: Hou, S. Y.
- New search for: Chen, W. Chris
- Further information on Chen, W. Chris:
-
https://orcid.org/0000-0002-1014-5858
- New search for: Hu, Clark
- New search for: Chiu, Christine
- New search for: Ting, K. C.
- New search for: Lin, T. S.
- New search for: Wei, W. H.
- New search for: Chiou, W. C.
- New search for: Lin, Vic J. C.
- New search for: Chang, Victor C. Y.
- New search for: Wang, C. T.
- New search for: Wu, C. H.
- New search for: Yu, Douglas
- New search for: Hou, S. Y.
- New search for: Chen, W. Chris
- Further information on Chen, W. Chris:
-
https://orcid.org/0000-0002-1014-5858
- New search for: Hu, Clark
- New search for: Chiu, Christine
- New search for: Ting, K. C.
- New search for: Lin, T. S.
- New search for: Wei, W. H.
- New search for: Chiou, W. C.
- New search for: Lin, Vic J. C.
- New search for: Chang, Victor C. Y.
- New search for: Wang, C. T.
- New search for: Wu, C. H.
- New search for: Yu, Douglas
In:
IEEE Transactions on Electron Devices
;
64
, 10
;
4071-4077
;
2017
- Article (Journal) / Electronic Resource
-
Title:Wafer-Level Integration of an Advanced Logic-Memory System Through the Second-Generation CoWoS Technology
-
Contributors:Hou, S. Y. ( author ) / Chen, W. Chris ( author ) / Hu, Clark ( author ) / Chiu, Christine ( author ) / Ting, K. C. ( author ) / Lin, T. S. ( author ) / Wei, W. H. ( author ) / Chiou, W. C. ( author ) / Lin, Vic J. C. ( author ) / Chang, Victor C. Y. ( author )
-
Published in:IEEE Transactions on Electron Devices ; 64, 10 ; 4071-4077
-
Publisher:
- New search for: IEEE
-
Publication date:2017-10-01
-
Size:3554141 byte
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Electronic Resource
-
Language:English
-
Source:
Table of contents – Volume 64, Issue 10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3979
-
On-Chip ESD Protection Device for High-Speed I/O Applications in CMOS TechnologyChen, Jie-Ting / Lin, Chun-Yu / Ker, Ming-Dou et al. | 2017
- 3986
-
Modeling of Back-Gate Effects on Gate-Induced Drain Leakage and Gate Currents in UTB SOI MOSFETsLin, Yen-Kai / Kushwaha, Pragya / Agarwal, Harshit / Chang, Huan-Lin / Duarte, Juan Pablo / Sachid, Angada B. / Khandelwal, Sourabh / Salahuddin, Sayeef / Hu, Chenming et al. | 2017
- 3991
-
Ultracompact ESD Protection With BIMOS-Merged Dual Back-to-Back SCR in Hybrid Bulk 28-nm FD-SOI Advanced CMOS TechnologyGaly, Philippe / Bourgeat, Johan / Guitard, Nicolas / Lise, Jean-Daniel / Marin-Cudraz, David / Legrand, Charles-Alexandre et al. | 2017
- 3998
-
Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate StacksSeo, Yujin / Kim, Choong-Ki / Lee, Tae-In / Hwang, Wan Sik / Yu, Hyun-Yong / Choi, Yang-Kyu / Cho, Byung Jin et al. | 2017
- 4002
-
Effective Current Model for Inverter-Transmission Gate Structure and Its Application in Circuit DesignSharma, Arvind / Alam, Naushad / Bulusu, Anand et al. | 2017
- 4011
-
NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and ModelingGao, Rui / Ji, Zhigang / Manut, Azrif B. / Zhang, Jian Fu / Franco, Jacopo / Wan Muhamad Hatta, Sharifah / Zhang, Wei Dong / Kaczer, Ben / Linten, Dimitri / Groeseneken, Guido et al. | 2017
- 4018
-
PBTI in HKMG nMOS Transistors— Effect of Width, Layout, and Other Technological ParametersDuhan, Pardeep / Rao, V. Ramgopal / Mohapatra, Nihar Ranjan et al. | 2017
- 4025
-
Impact of Interface Traps and Surface Roughness on the Device Performance of Stacked-Nanowire FETsPark, Jinyoung / Shin, Changhwan et al. | 2017
- 4031
-
A Hybrid Planar-Doped Potential-Well Barrier Diode for Detector ApplicationsAkura, Mise / Dunn, Geoffrey / Missous, Mohamed et al. | 2017
- 4036
-
Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission SpectroscopyZhang, Zhaofu / Li, Baikui / Qian, Qingkai / Tang, Xi / Hua, Mengyuan / Huang, Baoling / Chen, Kevin J. et al. | 2017
- 4044
-
Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx DepositionWaller, William M. / Gajda, Mark / Pandey, Saurabh / Donkers, Johan J. T. M. / Calton, David / Croon, Jeroen / Sonsky, Jan / Uren, Michael J. / Kuball, Martin et al. | 2017
- 4050
-
Barrier Height Variation in Ni-Based AlGaN/GaN Schottky DiodesHajlasz, Marcin / Donkers, Johan J. T. M. / Pandey, Saurabh / Hurkx, Fred / Hueting, Raymond J. E. / Gravesteijn, Dirk J. et al. | 2017
- 4057
-
Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate StructureYang, Ling / Mi, Minhan / Hou, Bin / Zhu, Jiejie / Zhang, Meng / He, Yunlong / Lu, Yang / Zhu, Qing / Zhou, Xiaowei / Lv, Ling et al. | 2017
- 4065
-
RF Performance of In Situ SiNx Gate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator SubstrateChiu, Hsien-Chin / Wang, Hou-Yu / Peng, Li-Yi / Wang, Hsiang-Chun / Kao, Hsuan-Ling / Hu, Chih-Wei / Xuan, Rong et al. | 2017
- 4071
-
Wafer-Level Integration of an Advanced Logic-Memory System Through the Second-Generation CoWoS TechnologyHou, S. Y. / Chen, W. Chris / Hu, Clark / Chiu, Christine / Ting, K. C. / Lin, T. S. / Wei, W. H. / Chiou, W. C. / Lin, Vic J. C. / Chang, Victor C. Y. et al. | 2017
- 4078
-
Tristate Memory Cells Using Double-Peaked Fin-Array III–V Tunnel Diodes Monolithically Grown on (001) Silicon SubstratesHan, Yu / Li, Qiang / Lau, Kei May et al. | 2017
- 4084
-
Leveraging nMOS Negative Differential Resistance for Low Power, High Reliability Magnetic MemoryWang, Shaodi / Pan, Andrew / Grezes, Cecile / Khalili Amiri, Pedram / Wang, Kang L. / Chui, Chi On / Gupta, Puneet et al. | 2017
- 4091
-
Reliability Study of Ferroelectric Al:HfO2 Thin Films for DRAM and NAND ApplicationsFlorent, Karine / Lavizzari, Simone / Di Piazza, Luca / Popovici, Mihaela / Duan, Jingyu / Groeseneken, Guido / Van Houdt, Jan et al. | 2017
- 4099
-
Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph SignalsChai, Zheng / Ma, Jigang / Zhang, Wei Dong / Govoreanu, Bogdan / Zhang, Jian Fu / Ji, Zhigang / Jurczak, Malgorzata et al. | 2017
- 4106
-
Heat Transfer in Filamentary RRAM DevicesNiraula, Dipesh / Karpov, Victor G. et al. | 2017
- 4114
-
Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O2 AnnealingYe, Zhi / Xu, Hua / Liu, Tengfei / Liu, Ni / Wang, Ying / Zhang, Ning / Liu, Yang et al. | 2017
- 4123
-
Dynamic Logic Circuits Using a-IGZO TFTsKim, Jong-Seok / Jang, Jun-Hwan / Kim, Yong-Duck / Byun, Jung-Woo / Han, Kilim / Park, Jin-Seong / Choi, Byong-Deok et al. | 2017
- 4131
-
Side-by-Side Comparison of Single- and Dual-Active Layer Oxide TFTs: Experiment and TCAD SimulationStewart, Kevin A. / Gouliouk, Vasily / McGlone, John M. / Wager, John F. et al. | 2017
- 4137
-
Solution-Processed SrOx-Gated Oxide Thin-Film Transistors and InvertersFan, Caixuan / Liu, Ao / Meng, You / Guo, Zidong / Liu, Guoxia / Shan, Fukai et al. | 2017
- 4144
-
Performance Evaluation and Parametric Optimum Choice Criteria of a Near-Field Thermophotovoltaic CellLiao, Tianjun / Yang, Zhimin / Dong, Qingchun / Chen, Xiaohang / Chen, Jincan et al. | 2017
- 4149
-
A Facile Approach to Fabricate Patterned Surfaces for Enhancing Light Efficiency of COB-LEDsYu, Xingjian / Xie, Bin / Shang, Bofeng / Shu, Weicheng / Luo, Xiaobing et al. | 2017
- 4156
-
Planar GaN-Based Blue Light-Emitting Diodes With Surface p-n Junction Formed by Selective-Area Si–Ion ImplantationLee, Ming-Lun / Yeh, Yu-Hsiang / Liu, Zi-Yuan / Chiang, Kai-Jen / Sheu, Jinn-Kong et al. | 2017
- 4161
-
Enhanced UV Photodetector Response of ZnO/Si With AlN Buffer LayerRoul, Basanta / Pant, Rohit / Chirakkara, Saraswathi / Chandan, Greeshma / Nanda, K. K. / Krupanidhi, S. B. et al. | 2017
- 4167
-
High-Temperature Characteristics of 3-kV 4H-SiC Reverse Blocking MOSFET for High-Performance Bidirectional SwitchMori, Seigo / Aketa, Masatoshi / Sakaguchi, Takui / Nanen, Yuichiro / Asahara, Hirokazu / Nakamura, Takashi / Kimoto, Tsunenobu et al. | 2017
- 4175
-
Performance and Reliability Codesign for Superjunction Drain Extended MOS DevicesSomayaji, Jhnanesh / Kumar, B. Sampath / Bhat, M. S. / Shrivastava, Mayank et al. | 2017
- 4184
-
Theoretical Performance Limit of the IGBTWang, Hengyu / Su, Ming / Sheng, Kuang et al. | 2017
- 4193
-
Simulation-Based Study of Hybrid Fin/Planar LDMOS Design for FinFET-Based System-on-Chip TechnologyWu, Yi-Ting / Ding, Fei / Connelly, Daniel / Zheng, Peng / Chiang, Meng-Hsueh / Chen, Jone F. / Liu, Tsu-Jae King et al. | 2017
- 4200
-
Investigation of Double-Snapback Characteristic in Resistor-Triggered SCRs Stacking StructureYen, Shiang-Shiou / Cheng, Chun-Hu / Fan, Chia-Chi / Chiu, Yu-Chien / Hsu, Hsiao-Hsuan / Lan, Yu-Pin / Chang, Chun-Yen et al. | 2017
- 4206
-
Design and Characterization of High $di/dt$ CS-MCT for Pulse Power ApplicationsChen, Wanjun / Liu, Chao / Shi, Yijun / Liu, Yawei / Tao, Hong / Liu, Chengfang / Zhou, Qi / Li, Zhaoji / Zhang, Bo et al. | 2017
- 4213
-
Controlled Kink Effect in a Novel High-Voltage LDMOS Transistor by Creating Local Minimum in Energy Band DiagramMehrad, Mahsa / Zareiee, Meysam / Orouji, Ali A. et al. | 2017
- 4219
-
Investigation of Robustness Capability of −730 V P-Channel Vertical SiC Power MOSFET for Complementary Inverter ApplicationsAn, Junjie / Namai, Masaki / Yano, Hiroshi / Iwamuro, Noriyuki et al. | 2017
- 4226
-
Wafer Level Integration of 3-D Heat Sinks in Power ICsPara, Isabella / Marasso, S. L. / Perrone, D. / Gentile, M. G. / Sanfilippo, C. / Richieri, Giovanni / Merlin, Luigi / Pugliese, D. / Cocuzza, M. / Ferrero, S. et al. | 2017
- 4233
-
High-R Poly Resistance Deviation Improvement From Suppressions of Back-End Mechanical StressesLin, Tingyou / Ho, Yingchieh / Su, Chauchin et al. | 2017
- 4242
-
Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2Seo, Yujin / Lee, Tae In / Ahn, Hyun Jun / Moon, Jungmin / Hwang, Wan Sik / Yu, Hyun-Yong / Cho, Byung Jin et al. | 2017
- 4246
-
A Mobility Model for Random Discrete Dopants and Application to the Current Drivability of DRAM CellYu, Hoin / Kim, Daewon / Rhee, Sungman / Choi, Seongwook / Park, Young June et al. | 2017
- 4252
-
Leakage Current and Low-Frequency Noise Analysis and Reduction in a Suspended SOI Lateral p-i-n DiodeLi, Guoli / Kilchytska, Valeriya / Andre, Nicolas / Francis, Laurent A. / Zeng, Yun / Flandre, Denis et al. | 2017
- 4260
-
Investigation on the Conduction Mechanisms in Metal-Base Vertical Organic Transistors by DC and LF-Noise MeasurementsGiusi, G. / Sarnelli, E. / Barra, M. / Cassinese, A. / Scandurra, G. / Nakayama, K. / Ciofi, C. et al. | 2017
- 4266
-
Investigation of Instabilities in a Folded-Waveguide Sheet-Beam TWTSudhamani, H. S. / Balakrishnan, Jyothi / Reddy, S. U. M. et al. | 2017
- 4272
-
Microwave Power System Based on a Combination of Two MagnetronsZhang, Yi / Huang, Kama / Agrawal, Dinesh K. / Slawecki, Tania / Zhu, Huacheng / Yang, Yang et al. | 2017
- 4279
-
Beam–Wave Interaction From FEL to CARM and Associated Scaling LawsDi Palma, Emanuele / Dattoli, Giuseppe / Sabia, Elio / Sabchevski, Svilen / Spassovsky, Ivan et al. | 2017
- 4287
-
RF Behavior of a 220/251.5-GHz, 2-MW, Triangular Corrugated Coaxial Cavity GyrotronYuvaraj, S. / Kartikeyan, M. V. / Thumm, M. K. et al. | 2017
- 4295
-
Stateful Reconfigurable Logic via a Single-Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic MemoryZhang, He / Kang, Wang / Wang, Lezhi / Wang, Kang L. / Zhao, Weisheng et al. | 2017
- 4302
-
A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit ApplicationsAguirre-Morales, Jorge-Daniel / Fregonese, Sebastien / Mukherjee, Chhandak / Wei, Wei / Happy, Henri / Maneux, Cristell / Zimmer, Thomas et al. | 2017
- 4310
-
Solution-Processed Complementary Resistive Switching Arrays for Associative MemorySmith, Jeremy / Chung, Seungjun / Jang, Jaewon / Biaou, Carlos / Subramanian, Vivek et al. | 2017
- 4317
-
Evaluation of Negative Capacitance Ferroelectric MOSFET for Analog Circuit ApplicationsLi, Yang / Kang, Yuye / Gong, Xiao et al. | 2017
- 4322
-
Strain-Induced Armchair Graphene Nanoribbon Resonant-Tunneling DiodesZoghi, Milad / Goharrizi, Arash Yazdanpanah et al. | 2017
- 4327
-
A First Insight to the Thermal Dependence of the DC, Analog and RF Performance of an S/D Spacer Engineered DG-Ambipolar FETBhattacharjee, Abhishek / Saikiran, Marampally / Dasgupta, Sudeb et al. | 2017
- 4335
-
Graphene Electrodes as Barrier-Free Contacts for Carbon Nanotube Field-Effect TransistorsGangavarapu, P. R. Yasasvi / Lokesh, Punith C. / Bhat, K. N. / Naik, A. K. et al. | 2017
- 4340
-
Characterization of the CVD Graphene Monolayer as an Active Element of a One-Port Microwave DeviceJudek, Jaroslaw / Zdrojek, Mariusz / Sobieski, Jan / Przewloka, Aleksandra / Piotrowski, Jerzy K. et al. | 2017
- 4346
-
A Compact Model with Spin-Polarization Asymmetry for Nanoscaled Perpendicular MTJsDe Rose, Raffaele / Lanuzza, Marco / d'Aquino, Massimiliano / Carangelo, Greta / Finocchio, Giovanni / Crupi, Felice / Carpentieri, Mario et al. | 2017
- 4354
-
Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel TransistorsSchulte-Braucks, Christian / Pandey, Rahul / Sajjad, Redwan Noor / Barth, Mike / Ghosh, Ram Krishna / Grisafe, Ben / Sharma, Pankaj / von den Driesch, Nils / Vohra, Anurag / Rayner, Gilbert Bruce et al. | 2017
- 4363
-
Enhanced Negative Bias Stress Degradation in Multigate Polycrystalline Silicon Thin-Film TransistorsZhang, Dongli / Wang, Mingxiang / Wang, Huaisheng / Yang, Yilin et al. | 2017
- 4368
-
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on 2D Materials for Electronic, Optoelectronic and Sensor Devices| 2017
- C1
-
Table of contents| 2017
- C2
-
IEEE Transactions on Electron Devices publication information| 2017
- C3
-
IEEE Transactions on Electron Devices information for authors| 2017
-
Blank page| 2017