The Impact of Long-Term Memory Effects on the Linearizability of GaN HEMT-Based Power Amplifiers (English)
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In:
IEEE Transactions on Microwave Theory and Techniques
;
70
, 2
;
1377-1390
;
2022
- Article (Journal) / Electronic Resource
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Title:The Impact of Long-Term Memory Effects on the Linearizability of GaN HEMT-Based Power Amplifiers
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Contributors:Gomes, Joao L. ( author ) / Nunes, Luis C. ( author ) / Barradas, Filipe M. ( author ) / Cooman, Adam ( author ) / de Jong, Aryan E. F. ( author ) / Heeres, Rob M. ( author ) / Pedro, Jose C. ( author )
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Published in:IEEE Transactions on Microwave Theory and Techniques ; 70, 2 ; 1377-1390
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Publisher:
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Publication date:2022-02-01
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Size:4941770 byte
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 70, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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A Unified View of Computational ElectromagneticsChen, Zhizhang / Wang, Chao-Fu / Hoefer, Wolfgang J. R. et al. | 2022
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Passive Intermodulation Distortion in Connectors With Nonlinear Interaction in Electrical Contacts and Magnetic MaterialsJin, Qiuyan / Feng, Quanyuan et al. | 2022
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An Evolutionary Multilayer Perceptron-Based Large-Signal Model of GaN HEMTs Including Self-Heating and Trapping EffectsHu, Wenrui / Guo, Yong-Xin et al. | 2022
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A Generic Theory for Design of Efficient Three-Stage Doherty Power AmplifiersZhou, Han / Perez-Cisneros, Jose-Ramon / Hesami, Sara / Buisman, Koen / Fager, Christian et al. | 2022
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The Impact of Long-Term Memory Effects on the Linearizability of GaN HEMT-Based Power AmplifiersGomes, Joao L. / Nunes, Luis C. / Barradas, Filipe M. / Cooman, Adam / de Jong, Aryan E. F. / Heeres, Rob M. / Pedro, Jose C. et al. | 2022
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