Effect of Back Gate on Word Line Disturb Immunity of a Vertical Channel DRAM Cell Array Transistor (English)
- New search for: Jeong, Moonyoung
- New search for: Lee, Sangho
- New search for: Jun, Yootak
- New search for: Lee, Kiseok
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- New search for: Kim, Ilgweon
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- New search for: Jeong, Moonyoung
- New search for: Lee, Sangho
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In:
2024 IEEE International Reliability Physics Symposium (IRPS)
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P23.MR-1-P23.MR-4
;
2024
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ISBN:
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ISSN:
- Conference paper / Electronic Resource
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Title:Effect of Back Gate on Word Line Disturb Immunity of a Vertical Channel DRAM Cell Array Transistor
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Contributors:Jeong, Moonyoung ( author ) / Lee, Sangho ( author ) / Jun, Yootak ( author ) / Lee, Kiseok ( author ) / Park, Seokhan ( author ) / Oh, Jeonghoon ( author ) / Kim, Ilgweon ( author ) / Park, Jemin ( author )
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Published in:2024 IEEE International Reliability Physics Symposium (IRPS) ; P23.MR-1-P23.MR-4
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Publisher:
- New search for: IEEE
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Publication date:2024-04-14
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Size:906278 byte
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ISBN:
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Ferroelectric HfO2-based Capacitors for FeRAM: Reliability from Field Cycling Endurance to Retention (invited)Vishnumurthy, Pramoda / Alcala, Ruben / Mikolajick, Thomas / Schroeder, Uwe / Antunes, Luis Azevedo / Kersch, Alfred et al. | 2024
- 1
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A Unified Physics-Based Stochastic Model for EM-Induced Resistance Degradation in BEoL Interconnect SegmentsSukharev, V. / Choy, J.-H. / Kteyan, A. / Shuster-Passage, J. / Choi, S. / Gall, M. et al. | 2024
- 1
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Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping MeasurementsMarcuzzi, A. / Avramenko, M. / De Santi, C. / Moens, P. / Geenen, F. / Meneghesso, G. / Zanoni, E. / Meneghini, M. et al. | 2024
- 1
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ASAP: An Efficient and Reliable Programming Algorithm for Multi-level RRAM CellSun, Jingwei / Wang, Zongwei / Gao, Jiajun / Shan, Linbo / Wang, Qishen / Yang, Yuhang / Cai, Yimao / Huang, Ru et al. | 2024
- 1
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Title Page| 2024
- 1
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Breakthrough Metal/Graphene Interface Phonon Engineering for Reliable Graphene Based-Heat SpreadersKumar, Jeevesh / Dar, Aadil Bashir / Shah, Asif A. / K. M., Amogh / Chattaraj, Sumana / Patbhaje, Utpreksh / Rai, Anand K. / Verma, Rupali / Shrivastava, Mayank et al. | 2024
- 1
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Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETsShi, Limeng / Qian, Jiashu / Jin, Michael / Bhattacharya, Monikuntala / Yu, Hengyu / White, Marvin H. / Agarwal, Anant K. / Shimbori, Atsushi et al. | 2024
- 1
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A TCAD to SPICE Framework for Isolation of BTI and HCD in GAA-SNS FETs and to Estimate Impact on RO Under Normal and Overclocking ConditionsThakor, Karansingh / Chatterjee, Payel / Mahapatra, Souvik et al. | 2024
- 1
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On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental ApproachBoito, M. / Fregolent, M. / De Santi, C. / Abbisogni, A. / Smerzi, S. / Rossetto, I. / Iucolano, F. / Meneghesso, G. / Zanoni, E. / Meneghini, M. et al. | 2024
- 1
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Embedded Deep-Nwell Collector Used to Improve Latch-Up Immunity of Multi-Functional I/O Buffer with Indirect Power-Connected N-WellHsu, Chen-Wei / Ker, Ming-Dou / Chung, Ping-Lin / Cheng, Chin-Tung / Chen, Chih-Ping et al. | 2024
- 1
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Possible Origins, Identification, and Screening of Silent Data Corruption in Data CentersSangani, D. / Kaczer, B. / Weckx, P. / Roussel, Ph. J. / Mishra, S. / Marinissen, E. J. / Gielen, G. et al. | 2024
- 1
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Single-Event Performance of Flip Flop Designs at the 5-nm Bulk FinFET Node at Near-Threshold Supply VoltagesKronenberg, J. / Xiong, Y. / Pieper, N. / Ball, D. / Bhuva, B. et al. | 2024
- 1
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Reliability Assesement of Ferroelectric nvCAP for Small-Signal Capacitive Read-OutPhadke, Omkar / Mulaosmanovic, Halid / Dunkel, Stefan / Beyer, Sven / Yu, Shimeng et al. | 2024
- 1
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Reliability Assessment for an In-3D-NAND Approximate Searching SolutionTseng, Po-Hao / Lin, Yu-Hsuan / Lee, Feng-Min / Bo, Tian-Cih / Lee, Ming-Hsiu / Hsieh, Kuang-Yeu / Wang, Keh-Chung / Lu, Chih-Yuan et al. | 2024
- 1
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On-Chip Characterization of Random Telegraph Signal Noise in Bulk 90 nm CMOSKim, J. / Loveless, T. D. / Pew, J. / Young, R. / Rcising, D. / Nour, M. / Manos, P. / Chambers, M. / Barnaby, H. J. / Neucndank, J. et al. | 2024
- 1
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IRPS 2024 General Chair Welcome Message| 2024
- 1
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DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power AmplifiersO'Sullivan, B. J. / Alian, A. / Sibaja-Hernandez, A. / Franco, J. / Yadav, S. / Yu, H. / Rathi, A. / Peralagu, U. / Chasin, A. / Parvais, B. et al. | 2024
- 1
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2.5D/3D Packaging and Reliability: New Frontiers, Old Paradigms, and OpportunitiesMysore, Kaushik et al. | 2024
- 1
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Reliability Assessment of a-IGZO and ZnO Thin Film Transistors (TFTs) to X-ray irradiationRodriguez-Davila, R.A. / Fernandez-Izquierdo, L. / Fink, J. / Moise, T. / Baumann, R.C. / Gnade, B. / Quevedo-Lopez, M. / Young, C.D. et al. | 2024
- 1
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Anomalous Mixed-Mode Damage Effects in SiGe HBTs at Cryogenic TemperaturesLee, Harrison P. / Nergui, Delgermaa / Teng, Jeffrey W. / Moody, Jackson P. / Sepulveda-Ramos, Nelson E. / Cressler, John D. et al. | 2024
- 1
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Patrons Page| 2024
- 1
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Reversible and Irreversible Polarization Degradation of Hf0.5Zr0.5O2 Capacitors with Coherent Structural Transition at Elevated TemperaturesGao, Zhaomeng / Xin, Tianjiao / Liu, Cheng / Xu, Yilin / Wang, Yiwei / Zheng, Yunzhe / Wang, Rui / Li, Xiaotian / Zheng, Yonghui / Du, Kai et al. | 2024
- 1
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Decoupling Current and Voltage Mediated Breakdown Mechanisms in CVD MoS2 FETsPatbhaje, Utpreksh / Verma, Rupali / Kumar, Jeevesh / Dar, Aadil Bashir / Shrivastava, Mayank et al. | 2024
- 1
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On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETsMoens, P. / Geenen, F. / Avramenko, M. / Gomez-Garcia, G. / Matocha, K. et al. | 2024
- 01
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Electric Field Coupled Molecular Dynamic Insights into Anisotropic Reliability Issues of Monolayer MoS2 Based 2D FETsShah, Asif A. / Verma, Rupali / Chaudhuri, Rajarshi Roy / Bashir Dar, Aadil / Kumar, Jeevcsh / Rai, Anand Kumar / Chattaraj, Sumana / Shrivastava, Mayank et al. | 2024
- 2A.1-1
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Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further ScalingZhou, Huimei / Wang, Miaomiao / Wu, Ernest et al. | 2024
- 2B.1-1
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Modeling Dark Current Degradation of Monolithic InGaAs/GaAs-On-Si Nano-Ridge PhotodetectorsHsieh, Ping-Yi / Ben Driss, Ameni / Tsiara, Artemisia / O'Sullivan, Barry / Yudistira, Didit / Kunert, Bernardette / Van Campenhout, Joris / De Wolf, Ingrid et al. | 2024
- 2C.2-1
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The First Investigation of Switching Lifetime on Parallel-Connected GaN Power DevicesHuang, Yifei / Jiang, Qimeng / Huang, Sen / Dai, Xinyue / Wang, Xinhua / Liu, Xinyu et al. | 2024
- 2C.4-1
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HV-CV Analysis Trapping Behavior in 650V pGaN HEMT with Field Plates for High-Voltage Power ApplicationsLin, Y.S. / Yang, Cheng Hsun / Wang, C.H. / Sou, K.P. / Yang, Cheng Hong / Shih, M.C. / Hung, W.S. / Chuang, W. H. / Ciou, F.M. / Chiu, P. C. et al. | 2024
- 3A.1-1
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Comparing the Reliability of Solid-State Drives Based on TLC and QLC NAND Flash Memories (Invited)Frickey, Robert / Doller, Joseph / Norton, Robert / Sancho, Roman / Sayyad, Rakhshanda / Ustinov, Dmitry / Wang, Raymond / Xu, Harvey et al. | 2024
- 3B.1-1
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A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETsGrasser, T. / Feil, M. / Waschneck, K. / Reisinger, H. / Berens, J. / Waldhoer, D. / Vasilev, A. / Waltl, M. / Aichinger, T. / Bockstedte, M. et al. | 2024
- 3C.1-1
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Vmin Shift Prediction Using Machine Learning-Based Methodology for Automotive ProductsYang, Y.L. / Tsao, P.C. / Lin, C.W. / Chen, H.Q. / Huang, B.J. / Hsieh, Hank / Chen, Kerwin / Lee, Ross / Koh, Khim / Ting, Y.J. et al. | 2024
- 4A.2-1
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Low-PBTS defect-engineered high-mobility metal-oxide BEOL transistorsBcltrando, Bastien / Coppolelli, Bruno / Kim, Jung-Bae / Bae, Yang Ho / Weeks, Stephen / Enman, Lisa / Saheli, Ghazal / Cornigli, Davide / Brinkley, Stuart / Saly, Mark et al. | 2024
- 4B.2-1
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A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation ProfilesDivay, A. / Dehos, C. / Charlet, I. / Gaillard, F. / Duriez, B. / Garros, X. / Antonijevic, J. / Hai, J. / Revil, N. / Forest, J. et al. | 2024
- 4B.3-1
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Robustness Assessment Through 77GHz Operating Life Test of Power Amplifier for Radar Applications in 28nm FD-SOI CMOSCacho, F. / Cathelin, P. / Hai, J. / Bouvot, S. / Nowakowski, J. / Martinez, M. / Debroucke, R. / Jean, S. / Paulin, R. / Antonijevic, J. et al. | 2024
- 4C.1-1
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Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer TechnologyDiaz-Fortuny, Javier / Saraza-Canflanca, Pablo / Romano-Molar, Alex / Bury, Erik / Degraeve, Robin / Kaczer, Ben et al. | 2024
- 5A.1-1
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A Systematic Study of HCI Improvement in FinFET with Source/Drain Implant and Geometry ModulationRanjan, Rakesh / Perepa, Pavitra R. / Lee, Ki-Don / Jha, Ashish K. / Sahoo, Kartika C. / Sanders, Kayla N. / Moeller, Robert / Sharma, Prateek / Kang, Minhyo / Kim, Peter et al. | 2024
- 5B.1-1
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Reliability Considerations for 5G and 6G Phased ArraysDunworth, Jeremy / Jayamon, Jefy / Asbeck, Peter / Rebeiz, Gabriel et al. | 2024
- 5B.2-1
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Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion EffectsSaro, Marco / de Pieri, Francesco / Carlotto, Andrea / Fornasier, Mirko / Rampazzo, Fabiana / De Santi, Carlo / Meneghesso, Gaudenzio / Meneghini, Matteo / Zanoni, Enrico / Bisi, Davide et al. | 2024
- 5C.2-1
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Cell Lifetime Degradation Model Development for Li-Ion Coin Cells considering Calendar Aging and Post-Knee Degradation (Invited)Lall, Pradeep / Soni, Ved et al. | 2024
- 6A.3-1
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New Insights into the Random Telegraph Noise (RTN) in FinFETs at Cryogenic TemperatureWang, Zirui / Wang, Haoran / Wang, Yuxiao / Sun, Zixuan / Zeng, Lang / Wang, Runsheng / Huang, Ru et al. | 2024
- 6B.1-1
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PBTI in Scaled Oxide Submicron Enhancement Mode High-K Gallium Nitride TransistorsJoy, Soumitra / Joshi, Kaustubh / Zubair, Ahmad / Bader, Samuel / Peck, Jason / Beumer, Michael / Koirala, Pratik / Radosavljevic, Marko / Vora, Heli / Meric, Inanc et al. | 2024
- 7A.5-1
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Comprehensive Performance and Reliability Assessment of Se-based Selector-Only MemoryRavsher, Taras / Degraeve, Robin / Garbin, Daniele / Clima, Sergiu / Fantini, Andrea / Donadio, Gabriele / Kundu, Shreya / Devulder, Wouter / Hody, Hubert / Potoms, Goedele et al. | 2024
- 7B.2-1
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A Full Transient ElectroThermal - Elastoplastic Mechanical and Metallurgical 2D FEM of SiC MOSFET for Gate-Region Stress Investigation under Short-Pulse Short-Circuit (Invited)Shqair, Mustafa / Sarraute, Emmanuel / Richardeau, Frederic et al. | 2024
- 7B.5-1
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Modeling of Negative Bias Temperature Instability (NBTI) for Gate-All-Around (GAA) Stacked Nanosheet TechnologyLiu, Leitao / Fang, Jingtian / Pal, Ashish / Asenov, Plamen / Bajaj, Mohit / Deng, Bei / Lin, Xi-Wei / Mahapatra, Souvik / Kengeri, Subi / Bazizi, El Mehdi et al. | 2024
- 7C.1-1
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Accelerating Device-Circuit Self-Heating Simulations with Dynamic Time Evolution for GAAFETChen, Sihao / Li, Yu / Peng, Baokang / Sun, Zixuan / Zhang, Lining / Wang, Runsheng / Huang, Ru et al. | 2024
- 8A.2-1
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Statistical Characterization of Off-State Stress Degradation in Planar HKMG nFETs Using Device ArraysSaraza-Canflanca, P. / Sangani, D. / Diaz-Fortuny, J. / Tyaginov, S. / Gielen, G. / Bury, E. / Kaczer, B. et al. | 2024
- 8A.4-1
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A Novel Induced Offset Voltage Sensor for Separable Wear-Out Mechanism Characterization in a 12nm FinFET ProcessHill, Ian / Rendon, Mateo / Ivanov, Andre et al. | 2024
- 8B.4-1
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Thermal Analysis of High-Performance Server SoCs from FinFET to Nanosheet TechnologiesKumar, Nitish / Sankatali, Venkateswarlu / Chen, Yukai / Brunion, Moritz / Mishra, Subrat / Gupta, Ankur / Singh, Pushpapraj / Catthoor, Francky / Myers, James / Ryckaert, Julien et al. | 2024
- 8C.4-1
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On-Chip Single-Shot Pulse Generator for TDDB Characterization on a Sub-Nanosecond TimescaleDrallmeier, Matthew / Zhou, Yujie / Rosenbaum, Elyse et al. | 2024
- 9A.1-1
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Performance and Reliability of Nanosheet Oxide Semiconductor FETs with ALD-Grown InGaO for 3D Integration (Invited)Kobayashi, Masaharu / Hikake, Kaito / Li, Zhuo / Hao, Junxiang / Pandy, Chitra / Saraya, Takuya / Hiramoto, Toshiro / Takahashi, Takanori / Uenuma, Mutsunori / Uraoka, Yukiharu et al. | 2024
- 9B.2-1
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Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin IdentificationWang, Da / Xue, Yongkang / Liu, Yong / Ren, Pengpeng / Sun, Zixuan / Wang, Zirui / Liu, Yueyang / Cheng, Zhijun / Yang, Haiyang / Liu, Xiangli et al. | 2024
- 9B.3-1
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A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNANDMyeong, Ilho / Lim, Suhwan / Kim, Taeyoung / Park, Sanghyun / Noh, Suseong / Lee, Seung Min / Woo, Jongho / Ko, Hanseung / Noh, Youngji / Choi, Munkang et al. | 2024
- 10A.3-1
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Characterization and Multiscale Modeling of TDDB in State-of-the-art BEOLPalmieri, Andrea / Tavakoli, Mahdi / Ching, Chi / Zheng, Wenkai / You, Shi / Zhang, Xiaodong / Cornigli, Davide / Haverty, Michael / Singh, Navneet / Larcher, Luca et al. | 2024
- 10A.4-1
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A Novel Method for the Determination of Electromigration-Induced Void Nucleation StressesShuster-Passage, J. / Razek, S. Abdel / Mattoo, M. / Hauschildt, M. / Choi, S. / Gall, M. / Kteyan, A. / Choy, J.-H. / Sukharev, V. / Kraatz, M. et al. | 2024
- 10B.4-1
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The Enhancement Mechanisms of SiOx Hardness via Manipulation of Oxygen ContentCho, Hwanbeom / Kim, Kyeongeun / Kim, Minkyoung / An, Chinam / Sim, Noeul / Oh, Youngseok / Kim, Minseung / Kim, Gyumyeong / Park, Jinkyung / Jeon, Jin et al. | 2024
- 10B.5-1
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Machine Vision Observation, Artificial Intelligence Pattern Recognition, Protective Circuit Design, Characterization of Multiple Materials, and Nano-Structural Analysis for Investigating InGaN Green Light Emitting Diode Degradation in a Salty Water Vapor EnvironmentChen, Cheng-Shan / Yang, Chun-Yen / Yang, Shao-Jui / Wang, Deng-Yi / Kuo, Yaw-Wen / Hsiao, Wei-Han / Chou, Hsin-Hung / Lin, Chia-Feng / Li, Yung-Hui / Wu, YewChung Sermon et al. | 2024
- 10C.2-1
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Scaling Trends and Bias Dependence of SRAM SER from 16-nm to 3-nm FinFETNarasimham, B. / Montoya, A. R. / Paone, C. / Riehle, T. / Smith, M. / Tsau, L. / Ball, D. / Bhuva, B. et al. | 2024
- 10C.3-1
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Charge Trapping in Irradiated 3D Devices and ICs (Invited)Zhang, En Xia / Toguchi, Shintaro / Guo, Zi Xiang / Alles, Michael L. / Schrimpf, Ronald D. / Fleetwood, Daniel M. et al. | 2024
- P5.EM-1
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Impact of Edge and Basal Plane Oxidation on the Stability of Oxygen Doped MoS2- RRAMGora, Suman / Singh, Jay / Jangra, Mandeep / Datta, Arnab et al. | 2024
- P6.EM-1
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Drain Current Degradation Induced by Charge Trapping/De-Trapping in Fe-FETKim, Taeyoung / Lim, Suhwan / Myeong, Ilho / Park, Sanghyun / Noh, Suseong / Lee, Seung Min / Woo, Jongho / Ko, Hanseung / Noh, Youngji / Choi, Moonkang et al. | 2024
- P10.EM-1
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Microscopic Modeling of MgO Barrier Degradation Due to Interface Oxygen Frenkel Defects in Scaled MTJ Toward High-Density STT-MRAMTakashima, Rina / Koike, Takeo / Itai, Shogo / Sugiyama, Hideyuki / Lee, Young Min / Toko, Masaru / Ono, Soichiro / Watanabe, Daisuke / Oikawa, Soichi / Koi, Katsuhiko et al. | 2024
- P11.EM-1
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Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance $(> 10^{14})$ of HfZrO Anti-ferroelectrics for DRAM ApplicationsWeng, Zeping / Lan, Zhangsheng / Ding, Yaru / Qu, Yiming / Zhao, Yi et al. | 2024
- P16.EL-1
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Research on the Latch-Up Mechanism of DSOI at High TemperatureWu, Yuchen / Liu, Fanyu / Li, Bo / Li, Jiangjiang / Chen, Siyuan / Huang, Yang / Li, Jiamin / Zhang, Tiexin / Wan, Jing / Xu, Yong et al. | 2024
- P17.GaN-1
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Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTsCavaliere, A. / De Santi, C. / Meneghesso, G. / Zanoni, E. / Meneghini, M. et al. | 2024
- P22.MR-1
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Body Bias Impact on ION Degradation in SiGe-Channel pMOS without Si-Cap for DRAM PeripheryChatterjee, Dibyendu / Sharma, Uma / Murai, Hiroshi / Kudo, Tomohiko / Singanamalla, Raghu / Liu, Haitao et al. | 2024
- P23.MR-1
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Effect of Back Gate on Word Line Disturb Immunity of a Vertical Channel DRAM Cell Array TransistorJeong, Moonyoung / Lee, Sangho / Jun, Yootak / Lee, Kiseok / Park, Seokhan / Oh, Jeonghoon / Kim, Ilgweon / Park, Jemin et al. | 2024
- P24.MR-1
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Charge Loss Improvement in 3D Flash Memory by Molecular Oxidation of Tunneling OxideJhang, Pei-Ci / Lu, Chi-Pin / Shieh, Jung-Yu / Yang, Ling-Wu / Yang, Tahone / Chen, Kuang-Chao / Lu, Chih-Yuan / Lue, Hang-Ting / Du, Pei-Ying et al. | 2024
- P25.MR-1
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Cross-Temperature Reliability of 3D NAND: Cell-to-Cell Variability Analysis and CountermeasureKumar, Mondol Anik / Ray, Biswajit et al. | 2024
- P36.PI-1
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Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown CharacteristicsBastos, J. P. / O'Sullivan, B. J. / Higashi, Y. / Chasin, A. / Franco, J. / Arimura, H. / Ganguly, J. / Capogreco, E. / Spessot, A. / Horiguchi, N. et al. | 2024
- P46.RE-1
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Multiple Bit Upsets in Register Circuits at the 5-nm Bulk FinFET NodeXiong, Yoni / Pieper, Nicholas J. / Kronenberg, Jenna B. / Ball, Dennis R. / Casey, Megan / Bhuva, Bharat L. et al. | 2024
- P50.RT-1
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Repetitive Pulse Testing for LDMOS Transistor ReliabilityLiu, Tianjiao / Cook, Michael / Kendrick, Chris et al. | 2024
- P52.RT-1
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Surface Charge Migration in SiC Power MOSFETs Induced by HVDC-H3TRB TestingRummel, B.D. / Glaser, C.E. / Gurule, R.T. / Groves, M. / Binder, A.T. / Floyd, R. / Yates, L. / Reilly, K.J. / Kaplar, R.J. et al. | 2024
- P53.RF-1
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Assessing Non-Conducting Off-State Induced Hard Breakdown for PD-SOI MOSFETs using an RF Measurement TechniqueOtero-Carrascal, Alan Y. / Chaparro-Ortiz, Dora A. / Gutierrez-D, Edmundo A. / Torres-Torres, Reydezel / Huerta-Gonzalez, Oscar / Srinivasan, P. et al. | 2024
- P54.SiC-1
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Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB StressAvramenko, M. / De Schepper, L. / Cano, J.-F. / Geenen, F. / Moens, P. / Marcuzzi, A. / De Santi, C. / Meneghini, M. et al. | 2024
- P58.SiC-1
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Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-SiC FETs Using the Subthreshold Slope MethodSteinmann, Philipp / Lichtenwalner, Daniel J. / Stein, Shane / Park, Jae-Hyung / Das, Suman / Ryu, Sei-Hyung et al. | 2024
- P65.TX-1
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Self-Heating and Process-Induced Threshold Voltage Aware Reliability and Aging Analysis of Forksheet FETRathore, Sunil / Bagga, Navjeet / Dasgupta, S. et al. | 2024
- P67.TX-1
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Design Techniques Evaluation to Mitigate RTS Noise Effect in Column ADC of 3D Stacked Image Sensorsda Cunha, M. Gouveia / Place, S. / Gauthier, O. / Virollet, N. / Vignetti, M. / Martin-Gonthier, P. / Magnan, P. / Goiffon, V. et al. | 2024
- P68.TX-1
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A Novel Quantitative Model for Combination Effects of Hydrogen and Process Heat on Peripheral Transistors in 3D-NAND Flash MemoryLee, Dongjin / Lee, Yunjo / Na, Soyeong / Yun, KangOh / Baek, Sungkweon / Lee, Jaeduk / Jang, Jaehoon / Song, Jaihyuk et al. | 2024
- P69.TX-1
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Effect of Off-State Stress on Data-Valid Window Margin for Advanced DRAM Using HK/MG Process TechnologyLee, S. / Lee, N-H / Kim, G-J / Ahn, J. / Kim, IH. / Ha, S. / Rhee, S. / Bae, GH / Lee, KW / Lee, YS et al. | 2024
- P70.TX-1
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Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFETQu, Junru / Liu, Dong / Chen, Bing / Sun, Ying / Li, Xinze / Jin, Chengji / Chen, Jiajia / Qian, Haoji / Shen, Rongzong / Yu, Xiao et al. | 2024
- P72.TX-1
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Investigation of Interplays between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETsSun, Zixuan / Xue, Yongkang / Lu, Haoran / Ren, Pengpeng / Wang, Zirui / Ji, Zhigang / Wang, Runsheng / Huang, Ru et al. | 2024
- P74.TX-1
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Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETsVerma, Rupali / Patbhaje, Utpreksh / Shah, Asif Altaf / Kumar, Jeevesh / Chaudhuri, Rajarshi Roy / Dar, Aadil Bashir / Shrivastava, Mayank et al. | 2024
- P75.TX-1
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A New Method of Automatic Extraction of RTN and OMI-Friendly ImplementationXiao, Yu / Zhang, Chenyang / Wang, Da / Xue, Yongkang / Ren, Pengpeng / Ji, Zhigang et al. | 2024