A 1.9 GHz-band GaAs direct-quadrature modulator IC with a phase shifter (English)
- New search for: Yamamoto, K.
- New search for: Maemura, K.
- New search for: Andoh, N.
- New search for: Noda, M.
- New search for: Oki, K.
- New search for: Ishida, H.
- New search for: Mitsui, Y.
- New search for: Otsubo, M.
- New search for: Mitsui, S.
- New search for: Yamamoto, K.
- New search for: Maemura, K.
- New search for: Andoh, N.
- New search for: Noda, M.
- New search for: Oki, K.
- New search for: Ishida, H.
- New search for: Mitsui, Y.
- New search for: Otsubo, M.
- New search for: Mitsui, S.
In:
GaAs IC Symposium Technical Digest 1992
;
37-40
;
1992
-
ISBN:
- Conference paper / Electronic Resource
-
Title:A 1.9 GHz-band GaAs direct-quadrature modulator IC with a phase shifter
-
Contributors:Yamamoto, K. ( author ) / Maemura, K. ( author ) / Andoh, N. ( author ) / Noda, M. ( author ) / Oki, K. ( author ) / Ishida, H. ( author ) / Mitsui, Y. ( author ) / Otsubo, M. ( author ) / Mitsui, S. ( author )
-
Published in:
-
Publisher:
- New search for: IEEE
-
Publication date:1992-01-01
-
Size:338112 byte
-
ISBN:
-
DOI:
-
Type of media:Conference paper
-
Type of material:Electronic Resource
-
Language:English
-
Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 0_1
-
GaAs IC Symposium. 14th Annual IEEE Gallium Arsenide Integrated Circuit Symposium Technical Digest [Front Cover]| 1992
- 3
-
MMICs for automotive and traffic applicationsColquhoun, A. / Schmidt, L.P. et al. | 1992
- 7
-
Customer acceptance of GaAs ICsLande, S. et al. | 1992
- 11
-
Microelectronics for planetary spacecraftDraper, R.F. et al. | 1992
- 15
-
Current status of high performance silicon bipolar technologyZdebel, P.J. et al. | 1992
- 19
-
Novel high-impedance photoconductive sampling probe for ultra-high speed circuit characterizationKim, J. / Chan, Y.-J. / Williamson, S. / Nees, J. / Wakana, S. / Whitaker, J. / Pavlidis, D. et al. | 1992
- 23
-
A D-band monolithic low noise amplifierWang, H. / Ton, T.N. / Tan, K.L. / Garske, D. / Dow, G.S. / Berenz, J. / Pospieszalski, M.W. / Pan, S.K. et al. | 1992
- 29
-
A precise analog phase shifter for SHF SATCOM phased arraysHodges, N.E. / Yam, M.H. et al. | 1992
- 33
-
Broadband 1.5 GHz analog monolithic vector modulatorBingham, S. / Krause, B. et al. | 1992
- 37
-
A 1.9 GHz-band GaAs direct-quadrature modulator IC with a phase shifterYamamoto, K. / Maemura, K. / Andoh, N. / Noda, M. / Oki, K. / Ishida, H. / Mitsui, Y. / Otsubo, M. / Mitsui, S. et al. | 1992
- 41
-
Transimpedance amplifier design and performance for high bit rate optical fiber local loop networksHalkias, G. / Papavassiliou, C. / Perantinos, G. / Stathaki, E. / Turner, J. / Christou, A. et al. | 1992
- 47
-
Monolithic W-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTsWang, H. / Chang, K.W. / Chen, T.H. / Tan, K.L. / Dow, G.S. / Allen, B. / Berenz, J. et al. | 1992
- 51
-
A fully integrated monolithic D-band oscillator-doubler chain using InP-based HEMTsKwon, Y. / Pavlidis, D. / Marsh, P. / Ng, G.I. / Brock, T. / Munns, G. / Haddad, G.I. et al. | 1992
- 55
-
On-wafer measurement uncertainty for 3-terminal active millimetre-wave devicesWalters, P. / Pollard, R. / Richardson, J. / Gamand, P. / Suchet, P. et al. | 1992
- 59
-
A highly integrated wideband millimeter wave MMIC converter using 0.25 mu m p-HEMT technologyFudem, H. / Moghe, S. / Dietz, G. et al. | 1992
- 63
-
A W-band monolithic InGaAs/GaAs HEMT Schottky diode image reject mixerTon, T.N. / Chen, T.H. / Chang, K.W. / Wang, H. / Tan, T.L. / Dow, G.S. / Hayashibara, G.M. / Allen, B. / Berenz, J. et al. | 1992
- 67
-
A planar heterostructure diode W-band mixer using monolithic balanced integrated approach on InPKwon, Y. / Pavlidis, D. / Marsh, P. / Ng, G.I. / Brock, T. et al. | 1992
- 71
-
A 0.1-W W-band pseudomorphic HEMT MMIC power amplifierChen, T.H. / Tan, K.L. / Dow, G.S. / Wang, H. / Chang, K.W. / Ton, T.N. / Allen, B. / Berenz, J. / Liu, P.H. / Streit, D. et al. | 1992
- 75
-
8-96 GHz on-wafer network analysisYu, R.Y. / Pusl, J. / Konishi, Y. / Case, M. / Kamegawa, M. / Rodwell, M. et al. | 1992
- 81
-
GaAs RISC processorsBrown, R.B. / Barker, P. / Chandna, A. / Huff, T.R. / Kayssi, A.I. / Lomax, R.J. / Mudge, T.N. / Nagle, D. / Sakallah, K.A. / Sherhart, P.J. et al. | 1992
- 85
-
32 bit GaAs HFET IEEE floating point multiplierTate, L.R. / Niescier, R.J. / Hu, A.C. / Scorzelli, J. / Leung, W.-B. / Tzinis, C.H. / Robertson, P.J. / Baca, A. et al. | 1992
- 89
-
Complementary HFET 32-bit serial multiplierLaRue, G.S. / Grider, D.E. et al. | 1992
- 93
-
25 ps/gate GaAs standard cell LSIs using 0.5 mu m gate MESFETsNemoto, M. / Ogawa, Y. / Morita, Y. / Seki, S. / Kawakami, Y. / Akiyama, M. et al. | 1992
- 97
-
A 1 mW, 500 MHz 4-bit adder using two-phase dynamic FET logic gatesNary, K.R. / Long, S.I. et al. | 1992
- 101
-
39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technologyJensen, J.F. / Stanchina, W.E. / Metzger, R.A. / Rensch, D.B. et al. | 1992
- 105
-
System architecture and key components for an 8 bit/1 GHz GaAs MESFET ADCSauerer, J. / Hagelauer, R. / Oehler, F. / Rohmer, G. / Schlag, U. / Seitzer, D. / Grave, T. / Kellner, W. et al. | 1992
- 109
-
A stacked DCFL structure applied to a prescalar IC and investigated for ASICsShimizu, S. / Kamatani, Y. / Koide, N. / Nagasawa, H. / Kataoka, S. / Kitaura, Y. et al. | 1992
- 119
-
Advances in CPW-design applied to monolithic integrated Ka-band MESFET and HEMT-amplifiers on GaAsBertenburg, R. / Koster, N.H.L. / Wolff, I. / Tegude, F.-J. / Narozny, P. / Wenger, J. / Dambkes, H. et al. | 1992
- 123
-
GaAs MMICs for an integrated GPS front-endBenton, R. / Nijjar, M. / Woo, C. / Podell, A. / Horvath, G. / Wilson, E. / Mitchell, S. et al. | 1992
- 127
-
Monolithic pulse-doped MESFET LNA for DBS downconverterShiga, N. / Nakajima, S. / Kuwata, N. / Otobe, K. / Sekiguchi, T. / Matsuzaki, K. / Hayashi, H. et al. | 1992
- 131
-
Advanced technologies of low-power GaAs ICs and power modules for cellular telephonesIshikawa, O. / Ota, Y. / Maeda, M. / Tezuka, A. / Sakai, H. / Katoh, T. / Itoh, J. / Mori, Y. / Sagawa, M. / Inada, M. et al. | 1992
- 135
-
SPDT switch MMIC using E/D-mode GaAs JFETs for personal communicationsKusunoki, S. / Ohgihara, T. / Wada, M. / Murakami, Y. et al. | 1992
- 139
-
A high power-added efficiency GaAs power MESFET operating at a very low drain bias for use in L-band medium-power amplifiersMurai, S. / Sawai, T. / Yamaguchi, T. / Matsushita, S. / Harada, Y. et al. | 1992
- 143
-
A fully integrated transceiver chip for the 900 MHz communication bandsWoo, C. / Podell, A. / Benton, R. / Fisher, D. / Wachsman, J. et al. | 1992
- 149
-
Can GaAs ICs achieve Si VLSI reliability?MacWilliams, K.P. / Janousek, B.K. et al. | 1992
- 153
-
Reliability testing of state-of-the-art PM HEMT MMICs three-stage low-noise amplifierSaito, Y. / Jones, W. / Lizandro, C.J. / Mai, K. / Perry, C. / Wiltz, J. / Claxton, S. / Esfandiari, R. / Rezek, E. et al. | 1992
- 157
-
Reliability characteristics of mesa-etched isolated emitter structure AlGaAs/GaAs HBTs with Be-doped baseNozu, T. / Tsuda, K. / Asaka, M. / Obara, M. et al. | 1992
- 161
-
High current/temperature stress test on metal lines and interconnections for GaAs MMICsMagistrali, F. / Sala, D. / Turner, J. / Vanner, K. et al. | 1992
- 165
-
High performance and highly uniform sub-quarter micron BPLDD SAGFET with reduced source to gate spacingShimura, T. / Hosogi, K. / Khono, Y. / Sakai, M. / Kuragaki, T. / Shimada, M. / Kitano, T. / Nishitani, K. / Otsubo, M. / Mitsui, S. et al. | 1992
- 169
-
Process optimization of high performance ion implanted GaAs JFETsWilson, M.R. / Chasson, D.E. / Krongard, B.S. / Rosenberry, R.W. / Shah, N.A. / Welch, B.M. et al. | 1992
- 173
-
Low damage processing of III-V devices by ECR plasma techniquesMurrell, A.J. / Grimwood, R.C. / O'Sullivan, P. / Gilbert, M. / Vanner, K. / Ruddell, F. / Davies, I. / Hilton, K. / Bland, S. / Spear, D. et al. | 1992
- 177
-
Folded U-shaped micro-wire technology for GaAs IC interconnectionsHirano, M. / Toyoda, I. / Tokumitsu, M. / Asai, K. et al. | 1992
- 183
-
8-watt high efficiency X-band power amplifier using AlGaAs/GaAs HFET technologyCooper, S. / Anderson, K. / Culbertson, R. / Mason, J. / Bryant, D. / Saunier, P. et al. | 1992
- 187
-
High-efficiency 20 watt S/C-band power amplifier MMICKomiak, J.J. / Helms, D. et al. | 1992
- 191
-
High power CW RF probe measurementsLum, A. / Dale, C. / Ragle, D. / Vernon, M. et al. | 1992
- 195
-
Quarter, half, and one watt wideband millimeter-wave MMIC amplifiersGoldfarb, M. / Erfany, B. / Bernkopf, P. et al. | 1992
- 199
-
A unique 2 to 6 GHz 1 watt high efficiency GaAs MMIC amplifier design using all-pass matching networksArell, T. / Hongsmatip, T. et al. | 1992
- 203
-
A monolithic 1 to 50 GHz distributed amplifier with 20 dBm output powerPerdomo, J. / Hughes, B. / Kondoh, H. / Studebaker, L. / Zhou, G. / Taylor, T. / Li, C. / Ma, T. et al. | 1992
- 207
-
A high linearity, high efficiency pseudomorphic HEMTShanfield, S. / Schindler, M. / Aucoin, L. / Platzker, A. / Hoke, W. / Lyman, P. / Chu, S.L.G. / Binder, R. et al. | 1992
- 211
-
High linearity monolithic broadband pseudomorphic spike-doped MESFET amplifiersChu, S.L.G. / Huang, J.C. / Bertrand, A. / Schindler, M.J. / Struble, W. / Binder, R. / Hoke, W. et al. | 1992
- 217
-
Statistical process control implementation for GaAs integrated circuit fabricationSalzman, K.A. et al. | 1992
- 221
-
Temperature-dependent large signal model of heterojunction bipolar transistorsWhitefield, D.S. / Wei, C.J. / Hwang, J.C.M. et al. | 1992
- 225
-
Improved MESFET characterization for analog circuit design and analysisParker, A.E. / Skellern, D.J. et al. | 1992
- 229
-
Analysis of gate capacitances in GaAs JFETsAnholt, R. et al. | 1992
- 233
-
Numerical simulation of sidegating effect in GaAs MESFETsShwu-Jing Chang, / Chien-Ping Lee, et al. | 1992
- 237
-
Elimination of sidegating in n-channel GaAs MESFETs using a p-type wellCanfield, P.C. / Allstot, D.J. et al. | 1992
- 241
-
Simulation of trapping effects in GaAs MESFETs and requirements for substrates in MESFET-ICsHorio, K. / Fuseya, Y. et al. | 1992
- 247
-
InP integrated circuit technology for microwave, digital, and optoelectronic applicationsLarson, L.E. / Brown, J.J. et al. | 1992
- 251
-
A manufacturable high performance 0.1- mu m pseudomorphic AlGaAs/InGaAs HEMT process for W-band MMICsTan, K.L. / Liu, P.H. / Streit, D.C. / Dia, R. / Han, A.C. / Freudenthal, A. / Velebir, J. / Stolt, K. / Lee, J. / Lai, R. et al. | 1992
- 255
-
A high efficiency 0.25 mu m pseudomorphic HEMT power processDanzilio, D. / White, P. / Hanes, L.K. / Lauterwasser, B. / Ostrowski, B. / Rose, F. et al. | 1992
- 259
-
High efficiency X-band power HBTsWu, C.S. / Pao, C.K. / Hu, M. / Igawa, A.T. / Wang, D.C. / Wen, C.P. / Cisco, T.C. et al. | 1992
- 263
-
Producibility and performance of the microwave power HBTHo, W.J. / Wang, N.L. / Chang, M.F. / Higgins, J.A. et al. | 1992
- 267
-
A backside via process for thermal resistance improvement demonstrated using GaAs HBTsKofol, J.S. / Lin, B.J.F. / Mierzwinski, M. / Kim, A. / Armstrong, A. / Van Tuyl, R. et al. | 1992
- 271
-
Monitoring the base and emitter resistances in an AlGaAs/GaAs HBT linePrasad, S.J. et al. | 1992
- 283
-
A complete 400 Mb/s burst-mode data OEIC receiverMactaggart, R. / Bendett, M. / Taylor, S. et al. | 1992
- 287
-
A low noise and broad-band optical receiver for 10 Gb/s communication systemsKobayashi, N. / Furukawa, R. / Ozeki, Y. / Ushikubo, T. / Akiyama, M. et al. | 1992
- 291
-
10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data linksBerroth, M. / Hurm, V. / Lang, M. / Ludwig, M. / Nowotny, U. / Wang, Z.-G. / Wennekers, P. / Hulsmann, A. / Kaufel, G. / Kohler, K. et al. | 1992
- 295
-
A 9.6 Gb/s HEMT ATM switch LSI for B-ISDNWatanabe, Y. / Nakasha, Y. / Kato, Y. / Odani, K. / Abe, M. et al. | 1992
- 301
-
4 W, 7-12 GHz, compact CB HBT MMIC power amplifierWang, N.-L. / Ho, W.-J. / Higgins, J.A. et al. | 1992
- 305
-
A monolithic 35 GHz HBT quasi-optical grid oscillatorSovero, E.A. / Kim, M. / Weikle, R.M. / Deakin, D.S. / Ho, W.J. / Higgins, J.A. / Rutledge, D.B. et al. | 1992
- 309
-
HBT low power consumption 2-4.5 GHz variable gain feedback amplifierKobayashi, K.W. / Esfandiari, R. / Umemoto, D.K. / Oki, A.K. / Tran, L.T. / Streit, D.C. et al. | 1992
- 313
-
Integrated complementary HBT microwave push-pull and Darlington amplifiers with PNP active loadsKobayashi, K.W. / Umemoto, D.K. / Velebir, J.R. / Streit, D.C. / Oki, A.K. et al. | 1992