$\hbox{In}_{0.5}\hbox{Ga}_{0.5}\hbox{As}$ -Based Metal–Oxide–Semiconductor Capacitor on GaAs Substrate Using Metal–Organic Chemical Vapor Deposition (English)
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In:
IEEE Transactions on Electron Devices
;
60
, 1
;
235-240
;
2013
- Article (Journal) / Electronic Resource
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Title:$\hbox{In}_{0.5}\hbox{Ga}_{0.5}\hbox{As}$ -Based Metal–Oxide–Semiconductor Capacitor on GaAs Substrate Using Metal–Organic Chemical Vapor Deposition
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Contributors:Nguyen, H. Q. ( author ) / Trinh, H. D. ( author ) / Chang, E. Y. ( author ) / Lee, C. T. ( author ) / Shin Yuan Wang, ( author ) / Yu, H. W. ( author ) / Hsu, C. H. ( author ) / Nguyen, C. L. ( author )
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Published in:IEEE Transactions on Electron Devices ; 60, 1 ; 235-240
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Publisher:
- New search for: IEEE
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Publication date:2013-01-01
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Size:797602 byte
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 60, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 4
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T-ED Retiring EditorsCressler, John D. et al. | 2013
- 4
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EDITORIAL - T-ED Retiring EditorsCressler, J D et al. | 2013
- 5
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Welcome to a New T-ED EditorCressler, John D. et al. | 2013
- 6
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Counterdoped Pocket Thickness Optimization of Gate-on-Source-Only Tunnel FETsKuo-Hsing Kao, / Verhulst, A. S. / Vandenberghe, W. G. / De Meyer, K. et al. | 2013
- 6
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Silicon and Column IV Semiconductor Devices - Counterdoped Pocket Thickness Optimization of Gate-on-Source-Only Tunnel FETsKao, K-H et al. | 2013
- 13
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Revisited RF Compact Model of Gate Resistance Suitable for High- $K$/Metal Gate TechnologyDormieu, B. / Scheer, P. / Charbuillet, C. / Jaouen, H. / Danneville, F. et al. | 2013
- 13
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Revisited RF Compact Model of Gate Resistance Suitable for High- Formula Not Shown /Metal Gate TechnologyDormieu, B. / Scheer, P. / Charbuillet, C. / Jaouen, H. / Danneville, F. et al. | 2013
- 20
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Coupling Mechanisms and Effects Between On-Chip Antenna and Inductor or Coplanar WaveguideTianwei Deng, / Zhiming Chen, / Zhang, Y. P. et al. | 2013
- 28
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Design Optimization of Multigate Bulk MOSFETsHo, Byron / Xin Sun, / Changhwan Shin, / Tsu-Jae King Liu, et al. | 2013
- 34
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An Investigation on the Optimization and Scaling of Complementary SiGe HBTsChakraborty, P. S. / Moen, K. A. / Cressler, J. D. et al. | 2013
- 42
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Control of Resistance by Oxide on the Surface of Cu Interconnects With CuSiN and Ti-based Barrier MetalHayashi, Y. / Matsunaga, N. / Wada, M. / Nakao, S. / Watanabe, K. / Kato, S. / Sakata, A. / Kajita, A. / Shibata, H. et al. | 2013
- 49
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Comparison of SRAM Cells for 10-nm SOI FinFETs Under Process and Environmental VariationsJaksic, Z. / Canal, R. et al. | 2013
- 56
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Formula Not Shown Interface Engineering of Germanium Epitaxial Layer Grown Directly on SiliconTan, Y. H. / Yew, K. S. / Lee, K. H. / Chang, Y. J. / Chen, K. N. / Ang, D. S. / Fitzgerald, E. A. / Tan, C. S. et al. | 2013
- 56
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$\hbox{Al}_{2}\hbox{O}_{3}$ Interface Engineering of Germanium Epitaxial Layer Grown Directly on SiliconYew Heng Tan, / Kwang Sing Yew, / Kwang Hong Lee, / Yao-Jen Chang, / Kuan-Neng Chen, / Diing Shenp Ang, / Fitzgerald, E. A. / Chuan Seng Tan, et al. | 2013
- 56
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AI2O3 Interface Engineering of Germanium Epitaxial Layer Grown Directly on SiliconTan, Y H et al. | 2013
- 63
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Subthreshold Analog/RF Performance Enhancement of Underlap DG FETs With High- $k$ Spacer for Low Power ApplicationsKoley, K. / Dutta, A. / Syamal, B. / Saha, S. K. / Sarkar, C. K. et al. | 2013
- 63
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Subthreshold Analog/RF Performance Enhancement of Underlap DG FETs With High- Formula Not Shown Spacer for Low Power ApplicationsKoley, K. / Dutta, A. / Syamal, B. / Saha, S. K. / Sarkar, C. K. et al. | 2013
- 70
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Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random MemoryNardi, F. / Balatti, S. / Larentis, S. / Gilmer, D. C. / Ielmini, D. et al. | 2013
- 78
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Fabrication and Electrical Characterization of Fully CMOS-Compatible Si Single-Electron DevicesKoppinen, P. J. / Stewart, M. D. / Zimmerman, N. M. et al. | 2013
- 84
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Stochastic Variability in Silicon Double-Gate Lateral Tunnel Field-Effect TransistorsLeung, G. / Chi On Chui, et al. | 2013
- 92
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Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser AnnealingHsu-Yu Chang, / Adams, B. / Po-Yen Chien, / Jiping Li, / Woo, J. C. S. et al. | 2013
- 97
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FEM Model of Wraparound CNTFET With Multi-CNT and Its Capacitance ModelingAkanda, M. R. K. / Khosru, Q. D. M. et al. | 2013
- 103
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Transport Gap in Dual-Gated Graphene Bilayers Using Oxides as DielectricsKayoung Lee, / Fallahazad, B. / Hongki Min, / Tutuc, E. et al. | 2013
- 109
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Narrow-Width Effect on High-Frequency Performance and RF Noise of Sub-40-nm Multifinger nMOSFETs and pMOSFETsKuo-Liang Yeh, / Jyh-Chyurn Guo, et al. | 2013
- 117
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Orientational Dependence in Device Performances of InAs and Si Nanowire MOSFETs Under Ballistic TransportShimoida, K. / Yamada, Y. / Tsuchiya, H. / Ogawa, M. et al. | 2013
- 123
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Physical Modeling of the Capacitance and Capacitive Coupling Noise of Through-Oxide Vias in FDSOI-Based Ultra-High Density 3-D ICsChuan Xu, / Banerjee, K. et al. | 2013
- 132
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Operating Voltage Constraints in 45-nm SOI nMOSFETs and Cascode CoresArora, R. / Cressler, J. D. et al. | 2013
- 140
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Contact-Induced Negative Differential Resistance in Short-Channel Graphene FETsGrassi, R. / Low, T. / Gnudi, A. / Baccarani, G. et al. | 2013
- 147
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Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM CellsHu, Vita Pi-Ho / Ming-Long Fan, / Pin Su, / Ching-Te Chuang, et al. | 2013
- 153
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Fabrication of $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ pMOSFETs Using Corrugated Substrates for Improved $I_{\rm ON}$ and Reduced Layout-Width DependenceHo, B. / Nuo Xu, / Wood, B. / Vinh Tran, / Chopra, S. / Yihwan Kim, / Bich-Yen Nguyen, / Bonnin, O. / Mazure, C. / Kuppurao, S. et al. | 2013
- 153
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Fabrication of Si1-xGex/Si pMOSFETs Using Corrugated Substrates for Improved /ON and Reduced Layout-Width DependenceHo, B et al. | 2013
- 153
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Fabrication of Formula Not Shown pMOSFETs Using Corrugated Substrates for Improved Formula Not Shown and Reduced Layout-Width DependenceHo, B. / Xu, N. / Wood, B. / Tran, V. / Chopra, S. / Kim, Y. / Nguyen, B. Y. / Bonnin, O. / Mazure, C. / Kuppurao, S. et al. | 2013
- 159
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The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTsSukwon Choi, / Heller, E. R. / Dorsey, D. / Vetury, R. / Graham, S. et al. | 2013
- 159
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Compound Semiconductor Devices - The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTsChoi, S et al. | 2013
- 163
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InP DHBTs Having Lateral and Sidewall Collector Schottky ContactsCohen-Elias, D. / Gavrilov, A. / Cohen, S. / Kraus, S. / Ritter, D. et al. | 2013
- 171
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A Parametric Study of InGaN/GaN Nanorod Core-Shell LEDsAuf der Maur, Matthias / Sacconi, F. / Di Carlo, A. et al. | 2013
- 178
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Position-Dependent Bulk Traps and Carrier Compensation in 4H-SiC Bipolar Junction TransistorsUsman, M. / Nawaz, M. / Hallen, A. et al. | 2013
- 186
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Analysis of Contributing Factors for Determining the Reliability Characteristics of GaN-Based White Light-Emitting Diodes With Dual Degradation KineticsEunjin Jung, / Min Soo Kim, / Hyunsoo Kim, et al. | 2013
- 192
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Impact of Buffer Layer on Atomic Layer Deposited TiAlO Alloy Dielectric Quality for Epitaxial-GaAs/Ge Device ApplicationDalapati, G. K. / Chia, C. K. / Mahata, C. / Krishnamoorthy, S. / Tan, C. C. / Tan, H. R. / Maiti, C. K. / Dongzhi Chi, et al. | 2013
- 200
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Analysis of the GaAs/GaAsBi Material System for Heterojunction Bipolar TransistorsMarks, Z. D. / Haygood, I. W. / Van Zeghbroeck, B. et al. | 2013
- 206
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Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTsSchleeh, J. / Rodilla, H. / Wadefalk, N. / Nilsson, P. / Grahn, J. et al. | 2013
- 213
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Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation TechniqueHan-Yin Liu, / Bo-Yi Chou, / Wei-Chou Hsu, / Ching-Sung Lee, / Jinn-Kong Sheu, / Chiu-Sheng Ho, et al. | 2013
- 221
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Micromachined Passive Bandpass Filters Based on GaAs Monolithic-Microwave-Integrated-Circuit TechnologyZhiqiang Zhang, / Xiaoping Liao, et al. | 2013
- 229
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Photoelectrical and Low-Frequency Noise Characteristics of ZnO Nanorod Photodetectors Prepared on Flexible SubstrateChen, T. P. / Young, S. J. / Chang, S. J. / Hsiao, C. H. / Wu, S. L. et al. | 2013
- 235
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Formula Not Shown -Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor DepositionNguyen, H. Q. / Trinh, H. D. / Chang, E. Y. / Lee, C. T. / Wang, S. Y. / Yu, H. W. / Hsu, C. H. / Nguyen, C. L. et al. | 2013
- 235
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In0.5Ga0.5As-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor DepositionNguyen, H Q et al. | 2013
- 235
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$\hbox{In}_{0.5}\hbox{Ga}_{0.5}\hbox{As}$ -Based Metal–Oxide–Semiconductor Capacitor on GaAs Substrate Using Metal–Organic Chemical Vapor DepositionNguyen, H. Q. / Trinh, H. D. / Chang, E. Y. / Lee, C. T. / Shin Yuan Wang, / Yu, H. W. / Hsu, C. H. / Nguyen, C. L. et al. | 2013
- 241
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Junction-Temperature Determination in InGaN Light-Emitting Diodes Using Reverse Current MethodBiqing Wu, / Siqi Lin, / Tien-Mo Shih, / Yulin Gao, / Yijun Lu, / Lihong Zhu, / Guolong Chen, / Zhong Chen, et al. | 2013
- 246
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Memory Devices and Technology - Specifications of Nanoscale Devices and Circuits for Neuromorphic Computational SystemsRajendran, B et al. | 2013
- 246
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Specifications of Nanoscale Devices and Circuits for Neuromorphic Computational SystemsRajendran, B. / Yong Liu, / Jae-sun Seo, / Gopalakrishnan, K. / Chang, Leland / Friedman, D. J. / Ritter, M. B. et al. | 2013
- 254
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Impact of Moisture From Passivation on Endurance and Retention of NAND Flash MemoryZih-Song Wang, / Te-Yuan Yin, / Tzung-Hua Ying, / Ya-Jui Lee, / Chieh-Yi Lu, / Arakawa, H. / Chrong Jung Lin, et al. | 2013
- 260
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Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip ApplicationsYamada, T. / Nakajima, Y. / Hanajiri, T. / Sugano, T. et al. | 2013
- 260
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Thin Film Transistors - Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip ApplicationsYamada, T et al. | 2013
- 268
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Very Large Current Modulation in Vertical Heterostructure Graphene/hBN TransistorsFiori, G. / Bruzzone, S. / Iannaccone, G. et al. | 2013
- 274
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Direct Band-to-Band Tunneling in Reverse Biased $ \hbox{MoS}_{2}$ Nanoribbon p-n JunctionsGhosh, R. K. / Mahapatra, S. et al. | 2013
- 274
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Direct Band-to-Band Tunneling in Reverse Biased Formula Not Shown Nanoribbon p-n JunctionsGhosh, R. K. / Mahapatra, S. et al. | 2013
- 274
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Direct Band-to-Band Tunneling in Reverse Biased MoS2 Nanoribbon p-n JunctionsGhosh, R K et al. | 2013
- 280
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Charge Distribution and Contact Resistance Model for Coplanar Organic Field-Effect TransistorsChang Hyun Kim, / Bonnassieux, Y. / Horowitz, G. et al. | 2013
- 288
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A Self-Consistent Electrothermal Model for Analyzing NBTI Effect in p-Type Poly-Si Thin-Film TransistorsChih-Hsiang Ho, / Panagopoulos, G. / Roy, K. et al. | 2013
- 295
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Degradation of Polycrystalline Silicon TFT CMOS Inverters under AC OperationWei Chen, / Mingxiang Wang, / Yan Zhou, / Man Wong, et al. | 2013
- 301
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Optoelectronics, Displays, Imaging - Application of MgCaO Cathode Layer to Plasma Display Panel for High Luminous EfficacyLee, T-H et al. | 2013
- 301
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Application of MgCaO Cathode Layer to Plasma Display Panel for High Luminous EfficacyTae-Ho Lee, / Hee-Woon Cheong, / Ohyung Kwon, / Ki-Woong Whang, et al. | 2013
- 305
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Analysis of Gated CMOS Image Sensor for Spatial FilteringSpivak, A. / Belenky, A. / Fish, A. / Yadid-Pecht, O. et al. | 2013
- 314
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Fixed-Pattern-Noise Correction for an Integrating Wide-Dynamic-Range CMOS Image SensorDas, D. / Collins, S. et al. | 2013
- 320
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High-Performance Solution-Processed ZrInZnO Thin-Film TransistorsPhan Trong Tue, / Miyasako, T. / Jinwang Li, / Huynh Thi Cam Tu, / Inoue, S. / Tokumitsu, E. / Shimoda, T. et al. | 2013
- 320
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High-Performance Solution-Processed ZrlnZnO Thin-Film TransistorsTue, P T et al. | 2013
- 327
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Fabrication and Characterization of High-Mobility Solution-Based Chalcogenide Thin-Film TransistorsMejia, I. / Salas-Villasenor, A. L. / Dongkyu Cha, / Alshareef, H. N. / Gnade, B. E. / Quevedo-Lopez, M. A. et al. | 2013
- 333
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Color-Tunable and Phosphor-Free White-Light Multilayered Light-Emitting DiodesCheung, Y. F. / Choi, H. W. et al. | 2013
- 339
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Solid-State Power and High Voltage Devices - High-Q Backside Silicon-Embedded Inductor for Power Applications in μH and MHz RangeWu, R et al. | 2013
- 339
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High-$Q$ Backside Silicon-Embedded Inductor for Power Applications in $\mu\hbox{H}$ and MHz RangeRongxiang Wu, / Sin, J. K. O. / Yue, C. P. et al. | 2013
- 339
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High- Formula Not Shown Backside Silicon-Embedded Inductor for Power Applications in Formula Not Shown and MHz RangeWu, R. / Sin, J. K. / Yue, C. P. et al. | 2013
- 346
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A Novel Compact High-Voltage LDMOS Transistor Model for Circuit SimulationLongxing Shi, / Kan Jia, / Weifeng Sun, et al. | 2013
- 354
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Design of Novel 300-V Field-MOS FETs With Low on-Resistance for Analog Switch CircuitsMiyoshi, T. / Tominari, T. / Hayashi, Y. / Yoshinaga, M. / Oshima, T. / Wada, S. / Noguchi, J. et al. | 2013
- 360
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High-Performance p-Channel LDMOS Transistors and Wide-Range Voltage Platform Technology Using Novel p-Channel StructureShimamoto, S. / Yanagida, Y. / Shirakawa, S. / Miyakoshi, K. / Oshima, T. / Sakano, J. / Wada, S. / Noguchi, J. et al. | 2013
- 366
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Numerical Evaluation of 10-kV Clustered Insulated Gate Bipolar Transistor in 4H-SiCMenon, K. G. / Narayanan, E. M. S. et al. | 2013
- 374
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Cu Interconnect Limitations and Opportunities for SWNT Interconnects at the End of the RoadmapCeyhan, A. / Naeemi, A. et al. | 2013
- 374
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Materials, Processing, and Packaging - Cu Interconnect Limitations and Opportunities for SWNT Interconnects at the End of the RoadmapCeyhan, A et al. | 2013
- 383
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Demonstration of a Subthreshold FPGA Using Monolithically Integrated Graphene InterconnectsKyeong-Jae Lee, / Hyesung Park, / Jing Kong, / Chandrakasan, A. P. et al. | 2013
- 391
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Solid-State Device Phenomena - Self-Selection Unipolar HfOx-Based RRAMTran, X A et al. | 2013
- 391
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Self-Selection Unipolar Formula Not Shown -Based RRAMTran, X. A. / Zhu, W. / Liu, W. J. / Yeo, Y. C. / Nguyen, B. Y. / Yu, H. Y. et al. | 2013
- 391
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Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAMTran, X. A. / Zhu, W. / Liu, W. J. / Yeo, Y. C. / Nguyen, B. Y. / Yu, H. Y. et al. | 2013
- 396
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SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices—Part I: NBTIFranco, J. / Kaczer, B. / Roussel, P. J. / Mitard, J. / Moonju Cho, / Witters, L. / Grasser, T. / Groeseneken, G. et al. | 2013
- 405
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SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices—Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability IssuesFranco, J. / Kaczer, B. / Toledano-Luque, M. / Roussel, P. J. / Kauerauf, T. / Mitard, J. / Witters, L. / Grasser, T. / Groeseneken, G. et al. | 2013
- 413
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New Insights Into Defect Loss, Slowdown, and Device Lifetime EnhancementMeng Duan, / Jian Fu Zhang, / Zhigang Ji, / Wei Dong Zhang, / Kaczer, B. / De Gendt, S. / Groeseneken, G. et al. | 2013
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Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector–One Resistor Crossbar ArrayChun-Li Lo, / Tuo-Hung Hou, / Mei-Chin Chen, / Jiun-Jia Huang, et al. | 2013
- 427
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Comparison of Interfacial and Bulk Ionic Motion in Analog MemristorsGreenlee, J. D. / Calley, W. L. / Moseley, M. W. / Doolittle, W. A. et al. | 2013
- 433
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Electrical Resistivity of Liquid Ge2Sb2Te5 Based on Thin-Film and Nanoscale Device MeasurementsCU, K et al. | 2013
- 433
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Electrical Resistivity of Liquid $\hbox{Ge}_{2} \hbox{Sb}_{2}\hbox{Te}_{5}$ Based on Thin-Film and Nanoscale Device MeasurementsCil, K. / Dirisaglik, F. / Adnane, L. / Wennberg, M. / King, A. / Faraclas, A. / Akbulut, M. B. / Yu Zhu, / Chung Lam, / Gokirmak, Ali et al. | 2013
- 433
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Electrical Resistivity of Liquid Formula Not Shown Based on Thin-Film and Nanoscale Device MeasurementsCil, K. / Dirisaglik, F. / Adnane, L. / Wennberg, M. / King, A. / Faraclas, A. / Akbulut, M. B. / Zhu, Y. / Lam, C. / Gokirmak, A. et al. | 2013
- 438
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Forming Kinetics in HfO2-Based RRAM CellsLorenzi, P et al. | 2013
- 438
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Forming Kinetics in Formula Not Shown -Based RRAM CellsLorenzi, P. / Rao, R. / Irrera, F. et al. | 2013
- 438
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Forming Kinetics in $\hbox{HfO}_{2}$ -Based RRAM CellsLorenzi, P. / Rao, R. / Irrera, F. et al. | 2013
- 444
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On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETsdos Santos, Sara D. / Nicoletti, T. / Martino, J. A. / Aoulaiche, M. / Veloso, A. / Jurczak, M. / Simoen, E. / Claeys, C. et al. | 2013
- 451
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Performance Comparison of Conventional and Inverted Organic Bulk Heterojunction Solar Cells From Optical and Electrical AspectsDazheng Chen, / Chunfu Zhang, / Zhizhe Wang, / Jincheng Zhang, / Qian Feng, / Shengrui Xu, / Xiaowei Zhou, / Yue Hao, et al. | 2013
- 451
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Molecular and Organic Devices - Performance Comparison of Conventional and Inverted Organic Bulk Heterojunction Solar Cells From Optical and Electrical AspectsChen, D et al. | 2013
- 458
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Improved Efficiency of Backward-Wave Oscillator With an Inclined Electron BeamSattorov, M. / Khutoryan, E. / Lukin, K. / Ohjoon Kwon, / Gun-Sik Park, et al. | 2013
- 458
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Vacuum Electron Devices - Improved Efficiency of Backward-Wave Oscillator With an Inclined Electron BeamSattorov, M et al. | 2013
- 464
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The Design and Fabrication of Carbon-Nanotube-Based Field Emission X-Ray Cathode With Ballast ResistorYonghai Sun, / Jaffray, D. A. / Yeow, J. T. W. et al. | 2013
- 471
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High-Power Millimeter-Wave BWO Driven by Sheet Electron BeamZhanliang Wang, / Yubin Gong, / Yanyu Wei, / Zhaoyun Duan, / Yabin Zhang, / Linna Yue, / Huarong Gong, / Hairong Yin, / Zhigang Lu, / Jin Xu, et al. | 2013
- 478
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Field-Emission Characteristics of Selectively Grown CNTsChung-Nan Tsai, / Kirkici, H. et al. | 2013
- 482
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High-Power Tunable Terahertz Radiation by High-Order Harmonic GenerationHuarong Gong, / Travish, G. / Jin Xu, / Yanyu Wei, / Jinjun Feng, / Yubin Gong, et al. | 2013
- 487
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Nanodiamond Vacuum Field Emission Integrated Differential AmplifierShao-Hua Hsu, / Weng Poo Kang, / Davidson, J. L. / Huang, J. H. / Kerns, David V. et al. | 2013
- 494
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Enhancing Frequency-Tuning Ability of an Improved Relativistic Backward-Wave OscillatorWei Song, / Xiaowei Zhang, / Changhua Chen, / Jun Sun, / Zhimin Song, et al. | 2013
- 498
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Bipolar Poisson Solution for Independent Double-Gate MOSFETAbraham, A. / Thakur, P. K. / Mahapatra, S. et al. | 2013
- 498
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BRIEFS - Bipolar Poisson Solution for Independent Double-Gate MOSFETAbraham, A et al. | 2013
- 502
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Physics-Based Solution for Electrical Resistance of Graphene Under Self-Heating EffectVerma, R. / Bhattacharya, S. / Mahapatra, S. et al. | 2013
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High-Power Copper Gratings for a Sheet-Beam Traveling-Wave Amplifier at G-bandJoye, C. D. / Calame, J. P. / Cook, A. M. / Garven, M. et al. | 2013
- 510
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Electron Transport in InAsSb-Based nBn Photodetector StructuresUmana-Membreno, G. A. / Klein, B. / Smith, E. P. G. / Antoszewski, J. / Plis, E. / Johnson, S. M. / Krishna, S. / Rhiger, D. R. / Faraone, L. et al. | 2013
- 513
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Characterization of Thermoelectric Properties of Heavily Doped n-Type Polycrystalline Silicon Carbide Thin FilmsMan I Lei, / Mehregany, M. et al. | 2013
- 518
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Errata to “Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFET” [Jul 12 1974-1979]Jandhyala, Srivatsava / Abraham, Aby / Anghel, Costin / Mahapatra, Santanu et al. | 2013
- 518
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CORRESPONDENCE - Errata to "Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFET"Jandhyala, S et al. | 2013
- 518
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Errata to Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFETJandhyala, S. / Abraham, A. / Anghel, C. / Mahapatra, S. et al. | 2013
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Special Issue on GaN Electronic Devices| 2013
- C1
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Table of contents| 2013
- C2
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IEEE Transactions on Electron Devices publication information| 2013
- C3
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IEEE Transactions on Electron Devices information for authors| 2013
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Physical Modeling of the Capacitance and Capacitive Coupling Noise of Through-Oxide Vras in FDSOI-Based Ultra-High-Density 3-D ICsXu, C et al. | 2013
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ANNOUNCEMENTS - Call for Papers — Special Issue on GaN Electron Devices| 2013