3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (English)
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In:
IEEE Electron Device Letters
;
37
, 7
;
902-905
;
2016
- Article (Journal) / Electronic Resource
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Title:3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs
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Contributors:Green, Andrew J. ( author ) / Chabak, Kelson D. ( author ) / Heller, Eric R. ( author ) / Fitch, Robert C. ( author ) / Baldini, Michele ( author ) / Fiedler, Andreas ( author ) / Irmscher, Klaus ( author ) / Wagner, Gunter ( author ) / Galazka, Zbigniew ( author ) / Tetlak, Stephen E. ( author )
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Published in:IEEE Electron Device Letters ; 37, 7 ; 902-905
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Publisher:
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Publication date:2016-07-01
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Size:1354308 byte
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 37, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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