Tunable RF Phase Shifters Based on Vanadium Dioxide Metal Insulator Transition (English)
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In:
IEEE Journal of the Electron Devices Society
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6
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965-971
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2018
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Tunable RF Phase Shifters Based on Vanadium Dioxide Metal Insulator Transition
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Contributors:Casu, Emanuele Andrea ( author ) / Oliva, Nicolo ( author ) / Cavalieri, Matteo ( author ) / Muller, Andrei A. ( author ) / Fumarola, Alessandro ( author ) / Vitale, Wolfgang A. ( author ) / Krammer, Anna ( author ) / Schuler, Andreas ( author ) / Fernandez-Bolanos, Montserrat ( author ) / Ionescu, Adrian M. ( author )
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Published in:IEEE Journal of the Electron Devices Society ; 6 ; 965-971
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Publisher:
- New search for: IEEE
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Publication date:2018-01-01
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Size:2481508 byte
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Editorial Toward Faster Publishing and Shorter Turnaround TimeOstling, Mikael et al. | 2018
- 2
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A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFETAlper, Cem / Padilla, Jose Luis / Palestri, Pierpaolo / Ionescu, Adrian M. et al. | 2018
- 8
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Experimental Investigations of State-of-the-Art 650-V Class Power MOSFETs for Cryogenic Power Conversion at 77KChen, Yu / Chen, Xiao-Yuan / Li, Tao / Feng, Ying-Jun / Liu, Yang / Huang, Qin / Li, Meng-Yao / Zeng, Lei et al. | 2018
- 19
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Electrostatically Doped DSL Schottky Barrier MOSFET on SOI for Low Power ApplicationsBashir, Faisal / Alharbi, Abdullah G. / Loan, Sajad A. et al. | 2018
- 26
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UHD AMOLED Driving Scheme of Compensation Pixel and Gate Driver Circuits Achieving High-Speed OperationLin, Chih-Lung / Chen, Po-Syun / Deng, Ming-Yang / Wu, Chia-En / Chiu, Wen-Ching / Lin, Yu-Sheng et al. | 2018
- 34
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Electrical Contacts in SOI MEMS Using Aerosol Jet PrintingKhorramdel, Behnam / Torkkeli, Altti / Mantysalo, Matti et al. | 2018
- 41
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Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrOxZhou, Jiuren / Peng, Yue / Han, Genquan / Li, Qinglong / Liu, Yan / Zhang, Jincheng / Liao, Min / Sun, Qing-Qing / Zhang, David Wei / Zhou, Yichun et al. | 2018
- 49
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Si3N4/Al2O3 Stack Layer Passivation for InAlAs/InGaAs InP-Based HEMTs With Good DC and RF PerformancesDing, Peng / Chen, Chen / Asif, Muhammad / Wang, Xi / Niu, Jiebin / Yang, Feng / Ding, Wuchang / Su, Yongbo / Wang, Dahai / Jin, Zhi et al. | 2018
- 55
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Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT ApplicationsCouso, Carlos / Martin-Martinez, Javier / Porti, Marc / Nafria, Montserrat et al. | 2018
- 63
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Quadruple Gate-Embedded T Structured GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility TransistorsLee, Ching-Ting / Chen, Wei-Shian / Lee, Hsin-Ying et al. | 2018
- 68
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Al2O3-Dielectric In0.18Al0.82N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench StructureLee, Ching-Sung / Hsu, Wei-Chou / Liu, Han-Yin / Chen, Yu-Chang et al. | 2018
- 74
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Design and Characterization of a Silicon Photomultiplier in 0.35- ${\mu }\text{m}$ CMOSD'Ascenzo, Nicola / Brockherde, Werner / Dreiner, Stefan / Schwinger, Alexander / Schmidt, Andrei / Xie, Qingguo et al. | 2018
- 81
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Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash MemoryJi, Hao / Wei, Yehui / Ma, Pengfei / Jiang, Ran et al. | 2018
- 85
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Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETsJazaeri, Farzan / Zhang, Chun-Min / Pezzotta, Alessandro / Enz, Christian et al. | 2018
- 95
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Gold-Nanoparticle-Coated Ge MIS PhotodiodesHsiao, Hao-Tse / Yao, I-Cheng / Ni, I-Chih / Tzeng, Shien-Der / Lin, Wei-Fan / Lin, Bo-Yu / Lin, Chu-Hsuan et al. | 2018
- 100
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In–Ga–Zn–O Thin-Film Devices As Synapse Elements in a Neural NetworkKimura, Mutsumi / Koga, Yuki / Nakanishi, Hiroki / Matsuda, Tokiyoshi / Kameda, Tomoya / Nakashima, Yasuhiko et al. | 2018
- 106
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High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFETWang, Yuangang / Lv, Yuanjie / Zhou, Xingye / Yin, Jiayun / Han, Tingting / Gu, Guodong / Song, Xubo / Tan, Xin / Dun, Shaobo / Guo, Hongyu et al. | 2018
- 110
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AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As OxidantsWang, Huan-Chung / Hsieh, Ting-En / Lin, Yueh-Chin / Luc, Quang Ho / Liu, Shih-Chien / Wu, Chia-Hsun / Dee, Chang Fu / Majlis, Burhanuddin Yeop / Chang, Edward Yi et al. | 2018
- 116
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75 Years of the Device Research Conference—A History Worth RepeatingFranklin, Aaron D. / Jena, Debdeep / Akinwande, Deji et al. | 2018
- 121
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Improvement of Charge Injection Using Ferroelectric Si:HfO2 As Blocking Layer in MONOS Charge Trapping MemoryJi, Hao / Wei, Yehui / Zhang, Xinlei / Jiang, Ran et al. | 2018
- 126
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Design Considerations for 4H-SiC Lateral BJTs for High Temperature Logic ApplicationsSiddiqui, Amna / Elgabra, Hazem / Singh, Shakti et al. | 2018
- 135
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High-Voltage 12.5-V Backside-Illuminated CMOS Photovoltaic Mini-ModulesHung, Yung-Jr / Cheng, Yu-Ching / Cai, Meng-Syuan / Lu, Chen-Han / Su, Hsiu-Wei et al. | 2018
- 139
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Scaling and Modeling of High Temperature 4H-SiC p-i-n PhotodiodesHou, Shuoben / Hellstrom, Per-Erik / Zetterling, Carl-Mikael / Ostling, Mikael et al. | 2018
- 146
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Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr0.7Ca0.3MnO3 Material Improvements and Device MeasurementsMoon, Kibong / Fumarola, Alessandro / Sidler, Severin / Jang, Junwoo / Narayanan, Pritish / Shelby, Robert M. / Burr, Geoffrey W. / Hwang, Hyunsang et al. | 2018
- 156
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Transient Simulation of Semiconductor Devices Using a Deterministic Boltzmann Equation SolverHong, Sung-Min / Jang, Jae-Hyung et al. | 2018
- 164
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Contact Resistance Reduction of WS2 FETs Using High-Pressure Hydrogen AnnealingKim, Yun Ji / Park, Woojin / Yang, Jin Ho / Kim, Yonghun / Lee, Byoung Hun et al. | 2018
- 169
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Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr0.7Ca0.3MnO3 Device Characteristics on Neural Network Training AccuracyFumarola, Alessandro / Sidler, Severin / Moon, Kibong / Jang, Junwoo / Shelby, Robert M. / Narayanan, Pritish / Leblebici, Yusuf / Hwang, Hyunsang / Burr, Geoffrey W. et al. | 2018
- 179
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The Role of the Photo-Generated Carrier in Surface Flashover of the GaAs Photoconductive Semiconductor SwitchWang, Shaoqiang / Shi, Wei et al. | 2018
- 183
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Multiple-Submicron Channel Array Gate-Recessed AlGaN/GaN Fin-MOSHEMTsLee, Ching-Ting / Juo, Hung-Yin et al. | 2018
- 189
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A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect TransistorsJiang, Chunsheng / Si, Mengwei / Liang, Renrong / Xu, Jun / Ye, Peide D. / Alam, Muhammad Ashraful et al. | 2018
- 195
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Deep Subthreshold TFT Operation and Design Window for Analog Gain StagesCheng, Xiang / Lee, Sungsik / Nathan, Arokia et al. | 2018
- 201
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High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers DesignChiu, Hsien-Chin / Chang, Yi-Sheng / Li, Bo-Hong / Wang, Hsiang-Chun / Kao, Hsuan-Ling / Hu, Chih-Wei / Xuan, Rong et al. | 2018
- 207
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Importance of $\Delta V_{{\text {DIBLSS}}}/({I}_{{\text {on}}} /{I}_{{\text {off}}})$ in Evaluating the Performance of n-Channel Bulk FinFET DevicesEng, Yi-Chuen / Hu, Luke / Chang, Tzu-Feng / Hsu, Steven / Chiou, Chun Mao / Wang, Ted / Yang, Chih-Wei / Cheng, Osbert / Wang, Chih-Yi / Tseng, C. S. et al. | 2018
- 214
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Integrated Active-Matrix Capacitive Sensor Using a-IGZO TFTs for AMOLEDChen, Yuanfeng / Geng, Di / Jang, Jin et al. | 2018
- 219
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Hot-Carrier Degradation in Power LDMOS: Selective LOCOS- Versus STI-Based ArchitectureTallarico, Andrea Natale / Reggiani, Susanna / Depetro, Riccardo / Torti, Andrea Mario / Croce, Giuseppe / Sangiorgi, Enrico / Fiegna, Claudio et al. | 2018
- 227
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Spin Splitter Based on Magnetically Confined Semiconductor Microstructure Modulated by Spin-Orbit CouplingLu, Maowang / Chen, Saiyan / Huang, Xinhong / Zhang, Guilian et al. | 2018
- 233
-
Analytical Calculation of Influence of Ferroelectric Properties on Electrical Characteristics Negative Capacitance Germanium FETsPeng, Yue / Han, Genquan / Chen, Zhibin / Li, Qinglong / Zhang, Jincheng / Hao, Yue et al. | 2018
- 240
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Passivation of Poly-Si Thin Film Employing Si Self-Implantation and Its Application to TFTsChen, Rongsheng / Zhou, Wei / Deng, Sunbin / Zhang, Meng / Wong, Man / Kwok, Hoi Sing et al. | 2018
- 245
-
Negative Capacitance Enhanced All Spin Logic Devices With an Ultra-Low 1 mV Working VoltageGao, Tianqi / Zeng, Lang / Zhang, Deming / Qin, Xiaowan / Long, Mingzhi / Zhang, Yue / Lin, Xiaoyang / Zhang, Youguang / Zhao, Weisheng et al. | 2018
- 250
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NbO2-Based Frequency Storable Coupled Oscillators for Associative Memory ApplicationLee, Donguk / Cha, Euijun / Park, Jaehyuk / Sung, Changhyuck / Moon, Kibong / Chekol, Solomon Amsalu / Hwang, Hyunsang et al. | 2018
- 254
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InGaAs/AlAs Resonant Tunneling Diodes for THz Applications: An Experimental InvestigationMuttlak, Saad G. / Abdulwahid, Omar S. / Sexton, J. / Kelly, Michael J. / Missous, Mohamed et al. | 2018
- 263
-
The Cryogenic Temperature Behavior of Bipolar, MOS, and DTMOS Transistors in Standard CMOSHomulle, Harald / Song, Lin / Charbon, Edoardo / Sebastiano, Fabio et al. | 2018
- 271
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Analysis and Simulation of Low-Frequency Noise in Indium-Zinc-Oxide Thin-Film TransistorsLiu, Yuan / He, Hongyu / Chen, Rongsheng / En, Yun-Fei / Li, Bin / Chen, Yi-Qiang et al. | 2018
- 280
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Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO2 Capacitor for Normally Off ApplicationKobayashi, Masaharu / Ueyama, Nozomu / Jang, Kyungmin / Hiramoto, Toshiro et al. | 2018
- 286
-
Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3-Dimensional NAND Flash MemoryKwon, Dae Woong / Lee, Junil / Kim, Sihyun / Lee, Ryoongbin / Kim, Sangwan / Lee, Jong-Ho / Park, Byung-Gook et al. | 2018
- 291
-
On the Formulation of Self-Heating Models for Circuit SimulationZhang, Lining / Song, Debin / Xiao, Ying / Lin, Xinnan / Chan, Mansun et al. | 2018
- 298
-
A New On-Chip ESD Strategy Using TFETs-TCAD Based Device and Network SimulationsSithanandam, Radhakrishnan / Kumar, Mamidala Jagadesh et al. | 2018
- 309
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Enhanced Hole Injection Into Single Layer WSe2Rodder, Michael A. / Dodabalapur, Ananth et al. | 2018
- 314
-
Investigation of Channel Doping Concentration and Reverse Boron Penetration on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode FETsHsieh, Dong-Ru / Chan, Yi-De / Kuo, Po-Yi / Chao, Tien-Sheng et al. | 2018
- 320
-
Effects of Al2O3 Capping and Post-Annealing on the Conduction Behavior in Few-Layer Black Phosphorus Field-Effect TransistorsZheng, H. M. / Gao, J. / Sun, S. M. / Ma, Q. / Wang, Y. P. / Zhu, B. / Liu, W. J. / Lu, H. L. / Ding, S. J. / Zhang, David W. et al. | 2018
- 325
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Dielectric Engineering With the Environment Material in 2-D Semiconductor DevicesWang, Hao / Chang, Sheng / He, Jin / Huang, Qijun / Liu, Feng et al. | 2018
- 332
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FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and VariabilityNagy, Daniel / Indalecio, Guillermo / Garcia-Loureiro, Antonio J. / Elmessary, Muhammad A. / Kalna, Karol / Seoane, Natalia et al. | 2018
- 341
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A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access MemorySu, Yu-Ting / Liu, Hsi-Wen / Chen, Po-Hsun / Chang, Ting-Chang / Tsai, Tsung-Ming / Chu, Tian-Jian / Pan, Chih-Hung / Wu, Cheng-Hsien / Yang, Chih-Cheng / Wang, Min-Chuan et al. | 2018
- 346
-
Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO2 CapacitorJang, Kyungmin / Ueyama, Nozomu / Kobayashi, Masaharu / Hiramoto, Toshiro et al. | 2018
- 354
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Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETsIm, Ki-Sik / Atmaca, Gokhan / Won, Chul-Ho / Caulmilone, Raphael / Cristoloveanu, Sorin / Kim, Yong-Tae / Lee, Jung-Hee et al. | 2018
- 360
-
Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN BarrierWang, Wen / Yu, Xinxin / Zhou, Jianjun / Chen, Dunjun / Zhang, Kai / Kong, Cen / Kong, Yuechan / Li, Zhonghui / Chen, Tangsheng et al. | 2018
- 365
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Optimization of Pinned Photodiode Pixels for High-Speed Time of Flight ApplicationsAcerbi, Fabio / Moreno-Garcia, Manuel / Koklu, Gozen / Gancarz, Radoslaw Marcin / Buttgen, Bernhard / Biber, Alice / Furrer, Daniel / Stoppa, David et al. | 2018
- 376
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Spatiotemporal Summation of a Triple-Terminal Light-Induced Artificial SynapseShen, Xiangfei / Shi, Zheng / Zhang, Shuai / Zhu, Bingcheng / Yuan, Jialei / Cai, Wei / Wang, Yongjin et al. | 2018
- 382
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Prospects of Tunnel FETs in the Design of Power Management Circuits for Weak Energy Harvesting DC SourcesCavalheiro, David Nunes / Moll, Francesc / Valtchev, Stanimir et al. | 2018
- 392
-
Enhancing Near-Infrared Photodetection Efficiency in SPAD With Silicon Surface NanostructurationFrey, Laurent / Marty, Michel / Andre, Severine / Moussy, Norbert et al. | 2018
- 396
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3-D Stacked Technology of DRAM-Logic Controller Using Through-Silicon Via (TSV)Shen, Wen-Wei / Lin, Yu-Min / Chen, Shang-Chun / Chang, Hsiang-Hung / Chang, Tao-Chih / Lo, Wei-Chung / Lin, Chien-Chung / Chou, Yung-Fa / Kwai, Ding-Ming / Kao, Ming-Jer et al. | 2018
- 403
-
Compensated Synaptic Device for Improved Recognition Accuracy of Neuromorphic SystemLee, Chuljun / Koo, Sang-Mo / Oh, Jong-min / Lee, Daeseok et al. | 2018
- 408
-
A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-Gate MOSFETsNetsu, Seiko / Hellenbrand, Markus / Zota, Cezar B. / Miyamoto, Yasuyuki / Lind, Erik et al. | 2018
- 413
-
Drift Field Implementation in Large Pinned Photodiodes for Improved Charge Transfer SpeedHondongwa, Donald B. / Fossum, Eric R. et al. | 2018
- 420
-
Analysis and Validation of Low-Frequency Noise Reduction in MOSFET Circuits Using Variable Duty Cycle Switched BiasingJainwal, Kapil / Sarkar, Mukul / Shah, Kushal et al. | 2018
- 432
-
Thickness Effect on Operational Modes of ZnGa2O4 MOSFETsCheng, Li-Chung / Huang, Chiung-Yi / Horng, Ray-Hua et al. | 2018
- 438
-
A Multi-Bit Neuromorphic Weight Cell Using Ferroelectric FETs, suitable for SoC IntegrationObradovic, Borna / Rakshit, Titash / Hatcher, Ryan / Kittl, Jorge / Sengupta, Rwik / Hong, Joon Goo / Rodder, Mark S. et al. | 2018
- 449
-
Suppression of Punch-Through Current in 3 kV 4H-SiC Reverse-Blocking MOSFET by Using Highly Doped Drift LayerMori, Seigo / Aketa, Masatoshi / Sakaguchi, Takui / Asahara, Hirokazu / Nakamura, Takashi / Kimoto, Tsunenobu et al. | 2018
- 464
-
A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory With Enhanced Memory Window and Data RetentionWang, Hong / Yan, Xiaobing / Jia, Xinlei / Zhang, Zichang / Ho, Chi-Hsiang / Lu, Chao / Zhang, Yuanyuan / Yang, Tao / Zhao, Jianhui / Zhou, Zhenyu et al. | 2018
- 468
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Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS CapacitorsPande, Peyush / Dimitrijev, Sima / Haasmann, Daniel / Amini Moghadam, Hamid / Tanner, Philip / Han, Jisheng et al. | 2018
- 475
-
Development and Fabrication of AlGaInP-Based Flip-Chip Micro-LEDsHorng, Ray-Hua / Chien, Huan-Yu / Chen, Ken-Yen / Tseng, Wei-Yu / Tsai, Yu-Ting / Tarntair, Fu-Gow et al. | 2018
- 480
-
Guest Editorial Special Section on the First Electron Devices Technology and Manufacturing (EDTM) Conference 2017Wakabayashi, Hitoshi et al. | 2018
- 481
-
Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon ChannelTakeuchi, Hideki / Mears, Robert J. / Stephenson, Robert J. / Hytha, Marek / Connelly, Daniel / Fastenko, Pavel / Burton, Richard / Cody, Nyles W. / Weeks, Doran / Choutov, Dmitri et al. | 2018
- 487
-
Pretreatment Effects on High-k/InxGa1–xAs MOS Interface Properties and Their Physical ModelYokoyama, Chiaki / Chang, Chi-Yu / Takenaka, Mitsuru / Takagi, Shinichi et al. | 2018
- 494
-
An Innovative Indicator to Evaluate DRAM Cell Transistor Leakage Current DistributionCho, Min Hee / Jeon, Namho / Kim, Taek Yong / Jeong, Moonyoung / Lee, Sungsam / Hong, Jong Seo / Hong, Hyeong Sun / Yamada, Satoru et al. | 2018
- 500
-
High-Mobility and H2-Anneal Tolerant InGaSiO/InGaZnO/InGaSiO Double Hetero Channel Thin Film Transistor for Si-LSI Compatible ProcessSaito, Nobuyoshi / Miura, Kentaro / Ueda, Tomomasa / Tezuka, Tsutomu / Ikeda, Keiji et al. | 2018
- 506
-
Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized AdditivesOnuki, Jin / Tamahashi, Kunihiro / Inami, Takashi / Nagano, Takatoshi / Sasajima, Yasushi / Ikeda, Shuji et al. | 2018
- 512
-
New Compact Electron Cyclotron Resonance Plasma Source for Silicon Nitride Film Formation in Minimal Fab SystemGoto, Tetsuya / Sato, Kei-Ichiro / Yabuta, Yuki / Sugawa, Shigetoshi / Hara, Shiro et al. | 2018
- 518
-
Bipolar Resistive Switching Characteristics in Flexible Pt/MZT/Al Memory and Ni/NbO2/Ni Selector StructureLee, Ke-Jing / Chang, Yu-Chi / Lee, Cheng-Jung / Wang, Li-Wen / Wang, Yeong-Her et al. | 2018
- 525
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Evaluation of Si:HfO2 Ferroelectric Properties in MFM and MFIS StructuresAnderson, Jackson D. / Merkel, Jordan / Macmahon, David / Kurinec, Santosh K. et al. | 2018
- 535
-
Introduction to the Special Section on the 2017 IEEE S3S ConferenceKhakifirooz, Ali / Sugii, Nobuyuki et al. | 2018
- 537
-
Demonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector RegionsHashemi, Pouya / Yau, Jeng-Bang / Chan, Kevin K. / Ning, Tak H. / Shahidi, Ghavam G. et al. | 2018
- 543
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A SPDT RF Switch Small- and Large-Signal Characteristics on TR-HR SOI SubstratesKazemi Esfeh, Babak / Rack, Martin / Makovejev, Sergej / Allibert, Frederic / Raskin, Jean-Pierre et al. | 2018
- 551
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Advanced FDSOI Device Design: The U-Channel Device for 7 nm Node and BeyondMuralidhar, Ramachandran / Dennard, Robert H. / Ando, Takashi / Lauer, Isaac / Hook, Terence et al. | 2018
- 557
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Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI)Deng, Jianan / Shao, Jinhai / Lu, Bingrui / Chen, Yifang / Zaslavsky, Alexander / Cristoloveanu, Sorin / Bawedin, Maryline / Wan, Jing et al. | 2018
- 565
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Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting ApplicationsMori, Takayuki / Ida, Jiro / Momose, Shun / Itoh, Kenji / Ishibashi, Koichiro / Arai, Yasuo et al. | 2018
- 571
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Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding ProcessLee, Kwang Hong / Wang, Yue / Wang, Bing / Zhang, Li / Sasangka, Wardhana Aji / Goh, Shuh Chin / Bao, Shuyu / Lee, Kenneth E. / Fitzgerald, Eugene A. / Tan, Chuan Seng et al. | 2018
- 579
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Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III–V and Ge MaterialsKim, Sang-Hyeon / Kim, Seong-Kwang / Shim, Jae-Phil / Geum, Dae-Myeong / Ju, Gunwu / Kim, Han-Sung / Lim, Hee-Jeong / Lim, Hyeong-Rak / Han, Jae-Hoon / Lee, Subin et al. | 2018
- 588
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Germanium on Insulator Fabrication for Monolithic 3-D IntegrationAbedin, Ahmad / Zurauskaite, Laura / Asadollahi, A. / Garidis, Konstantinos / Jayakumar, Ganesh / Malm, B. Gunnar / Hellstrom, Per-Erik / Ostling, Mikael et al. | 2018
- 594
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Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-IntegrationGaly, P. / Camirand Lemyre, J. / Lemieux, P. / Arnaud, F. / Drouin, D. / Pioro-Ladriere, Michel et al. | 2018
- 601
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Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness VariationsIndalecio, Guillermo / Garcia-Loureiro, Antonio J. / Elmessary, Muhammad A. / Kalna, Karol / Seoane, Natalia et al. | 2018
- 611
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Controlling L-BTBT in Emerging Nanotube FETs Using Dual-Material GateJain, Aakash Kumar / Sahay, Shubham / Kumar, Mamidala Jagadesh et al. | 2018
- 622
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Effects of Electric Fields on the Switching Properties Improvements of RRAM Device With a Field-Enhanced Elevated-Film-Stack StructureChuang, Kai-Chi / Lin, Kuan-Yu / Luo, Jun-Dao / Li, Wei-Shuo / Li, Yi-Shao / Chu, Chi-Yan / Cheng, Huang-Chung et al. | 2018
- 627
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Enhancing the Electrical Uniformity and Reliability of the HfO2-Based RRAM Using High-Permittivity Ta2O5 Side WallYuan, Mei / Tseng, Yi-Ting / Chen, Po-Hsun / Shih, Chih-Cheng / Huang, Hui-Chun / Chang, Ting-Chang / Cui, Xiaole / Lin, Xinnan / Zhang, Shengdong / Zhou, Hang et al. | 2018
- 633
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Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki DiodesBizindavyi, Jasper / Verhulst, Anne S. / Smets, Quentin / Verreck, Devin / Soree, Bart / Groeseneken, Guido et al. | 2018
- 642
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Random Telegraph Signal Phenomena in Ultra Shallow p+n Silicon Avalanche DiodesAgarwal, Vishal / Annema, Anne-Johan / Dutta, Satadal / Hueting, Raymond J. E. / Nanver, Lis K. / Nauta, Bram et al. | 2018
- 653
-
Influence of Surface Energy and Roughness on Hole Mobility in Solution-Processed Hybrid Organic Thin Film TransistorsLee, Sungsik / Li, Flora M. / Nathan, Arokia et al. | 2018
- 658
-
Built-In Sheet Charge As an Alternative to Dopant Pockets in Tunnel Field-Effect Transistors`Verreck, Devin / Verhulst, Anne S. / Xiang, Yang / Yakimets, Dmitry / El Kazzi, Salim / Parvais, Bertrand / Groeseneken, Guido / Collaert, Nadine / Mocuta, Anda et al. | 2018
- 664
-
Diffusive-Probabilistic Model for Inter-Pixel Crosstalk in HgCdTe Focal Plane ArraysVallone, Marco / Goano, Michele / Bertazzi, Francesco / Ghione, Giovanni / Hanna, Stefan / Eich, Detlef / Figgemeier, Heinrich et al. | 2018
- 674
-
Threshold Switching Behavior of Ag-SiTe-Based Selector Device and Annealing Effect on its CharacteristicsSong, Bing / Xu, Hui / Liu, Sen / Liu, Haijun / Li, Qingjiang et al. | 2018
- 680
-
Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium- Zinc-Oxide TFTs With Al Reacted Source/DrainLiang, Ting / Shao, Yang / Lu, Huiling / Zhou, Xiaoliang / Deng, Xuan / Zhang, Shengdong et al. | 2018
- 685
-
Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film TransistorsYang, Chung-I. / Chang, Ting-Chang / Liao, Po-Yung / Chen, Li-Hui / Chen, Bo-Wei / Chou, Wu-Ching / Chen, Guan-Fu / Lin, Sung-Chun / Yeh, Cheng-Yen / Tsai, Cheng-Ming et al. | 2018
- 691
-
SCR-Based ESD Protection Using a Penta-Well for 5 V ApplicationsSong, Bo-Bae / Do, Kyoung-Il / Koo, Yong-Seo et al. | 2018
- 696
-
Novel Computing Method for Short Programming Time and Low Energy Consumption in HfO2 Based RRAM ArraysSassine, Gilbert / Cagli, Carlo / Nodin, Jean-Francois / Molas, Gabriel / Nowak, Etienne et al. | 2018
- 703
-
Contactless Method to Measure 2DEG Charge Density and Band Structure in HEMT StructuresTurkulets, Yury / Shalish, Ilan et al. | 2018
- 708
-
The Simulation Study of the SOI Trench LDMOS With Lateral Super JunctionChen, Weizhong / He, Lijun / Han, Zhengsheng / Huang, Yi et al. | 2018
- 714
-
Improved Uniformity and Endurance Through Suppression of Filament Overgrowth in Electrochemical Metallization Memory With AgInSbTe Buffer LayerTao, Ye / Li, Xuhong / Xu, Haiyang / Wang, Zhongqiang / Ding, Wentao / Liu, Weizhen / Ma, Jiangang / Liu, Yichun et al. | 2018
- 721
-
In-Line Tunnel Field Effect Transistor: Drive Current ImprovementPark, Woojin / Hanna, Amir N. / Kutbee, Arwa T. / Hussain, Muhammad Mustafa et al. | 2018
- 726
-
Low Power and Low Noise Shift Register for In-Cell Touch Display ApplicationsSeo, Jeongrim / Nam, Hyoungsik et al. | 2018
- 733
-
Effect of Al2O3 Passivation Layer and Cu Electrodes on High Mobility of Amorphous IZO TFTHu, Shiben / Ning, Honglong / Lu, Kuankuan / Fang, Zhiqiang / Tao, Ruiqiang / Yao, Rihui / Zou, Jianhua / Xu, Miao / Wang, Lei / Peng, Junbiao et al. | 2018
- 738
-
Editorial For J-EDS WebsiteNathan, Arokia et al. | 2018
- 739
-
A Substrate-Dissipating (SD) Mechanism for a Ruggedness-Improved SOI LDMOS DeviceWang, Bing / Wang, Zhigang / Kuo, James B. et al. | 2018
- 747
-
Counteracting Threshold-Voltage Drift in Ion-Selective Field Effect Transistors (ISFETs) Using Threshold-Setting Ion ImplantationElyasi, Ali / Fouladian, Majid / Jamasb, Shahriar et al. | 2018
- 755
-
Investigating on Through Glass via Based RF Passives for 3-D IntegrationQian, Libo / Sang, Jifei / Xia, Yinshui / Wang, Jian / Zhao, Peiyi et al. | 2018
- 760
-
High-Gain Transimpedance Amplifier for Flexible Radiation Dosimetry Using InGaZnO TFTsBahubalindruni, Pydi Ganga / Martins, Jorge / Santa, Ana / Tavares, Vitor / Martins, Rodrigo / Fortunato, Elvira / Barquinha, Pedro et al. | 2018
- 766
-
User-Oriented Piezoelectric Force Sensing and Artificial Neural Networks in Interactive DisplaysGao, Shuo / Duan, Jifang / Kitsos, Vasileios / Selviah, David R. / Nathan, Arokia et al. | 2018
- 774
-
Inkjet Printed Electrodes in Thin Film TransistorsTao, Ruiqiang / Ning, Honglong / Chen, Jianqiu / Zou, Jianhua / Fang, Zhiqiang / Yang, Caigui / Zhou, Yicong / Zhang, Jianhua / Yao, Rihui / Peng, Junbiao et al. | 2018
- 791
-
Dual-Surface Modification of AlGaN/GaN HEMTs Using TMAH and Piranha Solutions for Enhancing Current and 1/f-Noise CharacteristicsReddy, M. Siva Pratap / Park, Won-Sang / Im, Ki-Sik / Lee, Jung-Hee et al. | 2018
- 797
-
Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic ApplicationsYao, Jing-Neng / Lin, Yueh-Chin / Hsu, Heng-Tung / Yang, Kai-Chun / Hsu, Hisang-Hua / Sze, Simon M. / Chang, Edward Yi et al. | 2018
- 803
-
An Investigation of Anode Hole Injection-Induced Abnormal Body Current in n-Channel HfO2/TiN MOSFETsLiao, Jih-Chien / Chang, Ting-Chang / Syong, Wei-Ren / Chang, Kai-Chun / Lu, Ying-Hsin / Liu, Hsi-Wen / Lin, Chien-Yu / Chen, Li-Hui / Jin, Fu-Yuan / Chen, Yu-Hsuan et al. | 2018
- 808
-
Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETsKwon, Sung-Kyu / Kwon, Hyuk-Min / Han, In-Shik / Jang, Jae-Hyung / Oh, Sun-Ho / Song, Hyeong-Sub / Park, Byoung-Seok / Chung, Yi-Sun / Lee, Jung-Hwan / Kim, Si-Bum et al. | 2018
- 815
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Lateral $\beta$ -Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kVHu, Zhuangzhuang / Zhou, Hong / Dang, Kui / Cai, Yuncong / Feng, Zhaoqing / Gao, Yangyang / Feng, Qian / Zhang, Jincheng / Hao, Yue et al. | 2018
- 821
-
Steep Slope Field-Effect Transistors With B–Te-Based Ovonic Threshold Switch DeviceYoo, Jongmyung / Lee, Donguk / Park, Jaehyuk / Song, Jeonghwan / Hwang, Hyunsang et al. | 2018
- 825
-
2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact MaterialsLiu, Xinke / Chiu, Hsien-Chin / Wang, Hou-Yu / Hu, Cong / Wang, Hsiang-Chun / Kao, Hsuan-Ling / Chien, Feng-Tso et al. | 2018
- 830
-
Drain-Induced Barrier Lowering in Oxide Semiconductor Thin-Film Transistors With Asymmetrical Local Density of StatesLee, Hyeon-Jun / Abe, Katsumi / Cho, Sung Haeng / Kim, June-Seo / Bang, Seokhwan / Lee, Myoung-Jae et al. | 2018
- 835
-
Simultaneous Emission AC-OLED Pixel Circuit for Extended Lifetime of OLED DisplaySeol, Ki-Hyuk / Kim, Young In / Park, Seungjun / Nam, Hyoungsik et al. | 2018
- 841
-
Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology NodeYao, Jiaxin / Li, Jun / Luo, Kun / Yu, Jiahan / Zhang, Qingzhu / Hou, Zhaozhao / Gu, Jie / Yang, Wen / Wu, Zhenhua / Yin, Huaxiang et al. | 2018
- 849
-
Enhancing Driving Performance of a-Si:H Thin-Film Transistors With Capacitive Coupling Method for Display ApplicationsLin, Chih-Lung / Chen, Fu-Hsing / Chang, Jui-Hung / Lin, Yu-Sheng et al. | 2018
- 856
-
InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/DChang, Po-Chun / Hsiao, Chih-Jen / Lumbantoruan, Franky Juanda / Wu, Chia-Hsun / Lin, Yen-Ku / Lin, Yueh-Chin / Sze, Simon M. / Chang, Edward Yi et al. | 2018
- 861
-
Multi- ${V}_{\text{th}}$ Strategies of 7-nm node Nanosheet FETs With Limited Nanosheet SpacingYoon, Jun-Sik / Jeong, Jinsu / Lee, Seunghwan / Baek, Rock-Hyun et al. | 2018
- 866
-
An Experimental Approach to Characterizing the Channel Local Temperature Induced by Self-Heating Effect in FinFETHsieh, E Ray / Jiang, Meng-Ru / Lin, Jian-Li / Chung, Steve S. / Chen, Tse Pu / Huang, Shih An / Chen, Tai-Ju / Cheng, Osbert et al. | 2018
- 875
-
Plasma Charging Effect on the Reliability of Copper BEOL Structures in Advanced FinFET TechnologiesTsai, Yi-Pei / Liou, Peng-Chun / Lin, Chrong Jung / King, Ya-Chin et al. | 2018
- 884
-
InGaAs Capacitor-Less DRAM Cells TCAD DemonstrationNavarro, Carlos / Navarro, Santiago / Marquez, Carlos / Donetti, Luca / Sampedro, Carlos / Karg, Siegfried / Riel, H. / Gamiz, Francisco et al. | 2018
- 948
-
Editorial to J-EDS ESSDERC 2017 Special IssueNafria, Montserrat / Collaert, Nadine et al. | 2018
- 950
-
Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeOx Interfacial Layers Formed by Plasma Pre-OxidationKe, Mengnan / Takenaka, Mitsuru / Takagi, Shinichi et al. | 2018
- 956
-
On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky DiodesLorin, Thomas / Vandendaele, William / Gwoziecki, Romain / Baines, Yannick / Biscarrat, Jerome / Jaud, Marie-Anne / Gillot, Charlotte / Charles, Matthew / Plissonnier, Marc / Ghibaudo, G. et al. | 2018
- 965
-
Tunable RF Phase Shifters Based on Vanadium Dioxide Metal Insulator TransitionCasu, Emanuele Andrea / Oliva, Nicolo / Cavalieri, Matteo / Muller, Andrei A. / Fumarola, Alessandro / Vitale, Wolfgang A. / Krammer, Anna / Schuler, Andreas / Fernandez-Bolanos, Montserrat / Ionescu, Adrian M. et al. | 2018
- 972
-
A Physical Model for the Hysteresis in MoS2 TransistorsKnobloch, Theresia / Rzepa, Gerhard / Illarionov, Yury Yu. / Waltl, Michael / Schanovsky, Franz / Stampfer, Bernhard / Furchi, Marco M. / Mueller, Thomas / Grasser, Tibor et al. | 2018
- 979
-
Material-Device-Circuit Co-Design of 2-D Materials-Based Lateral Tunnel FETsAgarwal, Tarun / Fiori, Gianluca / Soree, Bart / Radu, Iuliana / Heyns, Marc / Dehaene, Wim et al. | 2018
- 987
-
SPICE Modeling of Photoelectric Effects in Silicon With Generalized DevicesRossi, Chiara / Buccella, Pietro / Stefanucci, Camillo / Sallese, Jean-Michel et al. | 2018
- 996
-
Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic TemperaturesIncandela, Rosario M. / Song, Lin / Homulle, Harald / Charbon, Edoardo / Vladimirescu, Andrei / Sebastiano, Fabio et al. | 2018
- 1007
-
Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 KBeckers, Arnout / Jazaeri, Farzan / Enz, Christian et al. | 2018
- 1019
-
Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device ApplicationsPesic, Milan / Li, Taide / Di Lecce, Valerio / Hoffmann, Michael / Materano, Monica / Richter, Claudia / Max, Benjamin / Slesazeck, Stefan / Schroeder, Uwe / Larcher, Luca et al. | 2018
- 1026
-
Ultrahigh-Sensitive CMOS pH Sensor Developed in the BEOL of Standard 28 nm UTBB FDSOIAyele, Getenet Tesega / Monfray, Stephane / Ecoffey, Serge / Boeuf, Frederic / Cloarec, Jean-Pierre / Drouin, Dominique / Souifi, Abdelkader et al. | 2018
- 1033
-
Strained Silicon Complementary TFET SRAM: Experimental Demonstration and SimulationsLuong, G. V. / Strangio, S. / Tiedemann, A. T. / Bernardy, P. / Trellenkamp, S. / Palestri, P. / Mantl, S. / Zhao, Q. T. et al. | 2018
- 1041
-
Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded ElectrodesOliva, Nicolo / Casu, Emanuele Andrea / Vitale, Wolfgang A. / Stolichnov, Igor / Ionescu, Adrian Mihai et al. | 2018
- 1048
-
Tunneling Transistors Based on MoS2/MoTe2 Van der Waals HeterostructuresBalaji, Yashwanth / Smets, Quentin / Lockhart De La Rosa, Cesar Javier / Lu, Anh Khoa Augustin / Chiappe, Daniele / Agarwal, Tarun / Lin, Dennis H. C. / Huyghebaert, Cedric / Radu, Iuliana / Mocuta, Dan et al. | 2018
- 1056
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Modeling of Carrier Trapping and Its Impact on Switching PerformanceMiura-Mattausch, Mitiko / Kikuchihara, Hideyuki / Maiti, Tapas Kumar / Navarro, Dondee / Mattausch, Hans Jurgen et al. | 2018
- 1064
-
Fabrication and Study on Red Light Micro-LED DisplaysHorng, Ray-Hua / Chien, Huan-Yu / Tarntair, Fu-Gow / Wuu, Dong-Sing et al. | 2018
- 1070
-
A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal GateGlass, Stefan / Kato, Kimihiko / Kibkalo, Lidia / Hartmann, Jean-Michel / Takagi, Shinichi / Buca, Dan / Mantl, Siegfried / Qing-Tai, Zhao et al. | 2018
- 1077
-
Titanium Dioxide-Based Memristive Thin Film: A Correlation Study Between the Experimental Work and Simulation Program With Integrated Circuit Emphasis Hyperbolic Sine ModelsAbu Bakar, Raudah / Kamarozaman, Nur Syahirah / Abdullah, Wan Fazlida Hanim / Herman, Sukreen Hana et al. | 2018
- 1091
-
Simulation Study of a Super-Junction Deep-Trench LDMOS With a Trapezoidal TrenchCheng, Junji / Li, Ping / Chen, Weizhen / Yi, Bo / Chen, Xing Bi et al. | 2018
- 1097
-
Quantitative TLP Waveform Analysis for GGNmostsDe Raad, Gijs et al. | 2018
- 1115
-
Vacuum Nano-Triode in Nothing-On-Insulator Configuration Working in Terahertz DomainRavariu, Cristian et al. | 2018
- 1124
-
Abnormal Bias-Temperature Stress and Thermal Instability of $\beta$ -Ga2O3 Nanomembrane Field-Effect TransistorMa, Jiyeon / Lee, Oukjae / Yoo, Geonwook et al. | 2018
- 1129
-
Consideration of UFET Architecture for the 5 nm Node and Beyond Logic TransistorDas, Uttam Kumar / Eneman, Geert / Velampati, Ravi Shankar R. / Chauhan, Yogesh Singh / Jinesh, K. B. / Bhattacharyya, Tarun K. et al. | 2018
- 1136
-
High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98- $\text{m}{\Omega} \cdot$ cm2 for Power Device ApplicationsWang, Huan-Chung / Lumbantoruan, Franky Juanda / Hsieh, Ting-En / Wu, Chia-Hsun / Lin, Yueh-Chin / Chang, Edward Yi et al. | 2018
- 1142
-
Al2O3-Dielectric InAlN/AlN/GaN ${\Gamma}$ -Gate MOS-HFETs With Composite Al2O3/TiO2 Passivation OxidesLee, Ching-Sung / Yao, Xue-Cheng / Huang, Yi-Ping / Hsu, Wei-Chou et al. | 2018
- 1147
-
Role of Shape Factor in Forming Surface Electric Field Basin in RESURF Lateral Power Devices and its Optimization DesignZhang, Jun / Guo, Yu-Feng / Pan, David Z. et al. | 2018
- 1154
-
An Optimized 4H-SiC Trench MOS Barrier Schottky (TMBS) RectifierWang, Ying / Wang, Wen-Ju / Yu, Cheng-Hao / Huang, Yi-Fei / Sun, You-Lei / Tang, Jian-Xiang et al. | 2018
- 1159
-
CVD Growth Technologies of Layered MX2 Materials for Real LSI Applications—Position and Growth Direction Control and Gas Source SynthesisIrisawa, T. / Okada, N. / Mizubayashi, W. / Mori, T. / Chang, W.-H. / Koga, K. / Ando, A. / Endo, K. / Sasaki, S. / Endo, T. et al. | 2018
- 1164
-
A Computationally Efficient Compact Model for Trap-Assisted Carrier Transport Through Multi-Stack Gate Dielectrics of HKMG nMOS TransistorsOjha, Apoorva / Mohapatra, Nihar R. et al. | 2018
- 1173
-
Suppressing Oxidation-Enhanced Diffusion of Boron in Silicon With Oxygen-Inserted LayersConnelly, Daniel / Burton, Richard / Cody, Nyles W. / Fastenko, Pavel / Hytha, Marek / Stephenson, Robert / Takeuchi, Hideki / Weeks, Keith Doran / Mears, Robert et al. | 2018
- 1179
-
High Figure-of-Merit ( ${V}_{\text{BR}}^{\text{2}}$ / ${R}_{\text{ON}}$ ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back BarrierLee, Jun-Hyeok / Ju, Jeong-Min / Atmaca, Gokhan / Kim, Jeong-Gil / Kang, Seung-Hyeon / Lee, Yong Soo / Lee, Sang-Heung / Lim, Jong-Won / Kwon, Ho-Sang / Lisesivdin, Sefer Bora et al. | 2018
- 1187
-
Performance of Stacked Nanosheets Gate-All-Around and Multi-Gate Thin-Film-TransistorsLin, Yu-Ru / Yang, Yi-Yun / Lin, Yu-Hsien / Kurniawan, Erry Dwi / Yeh, Mu-Shih / Chen, Lun-Chun / Wu, Yung-Chun et al. | 2018
- 1192
-
Analysis of Read Margin and Write Power Consumption of a 3-D Vertical RRAM (VRRAM) Crossbar ArrayChoi, Sujin / Sun, Wookyung / Shin, Hyungsoon et al. | 2018
- 1202
-
Guest Editorial Special Section on the Second Electron Devices Technology and Manufacturing (EDTM) Conference 2018Ishimaru, Kazunari / Horiguchi, Naoto / Nojiri, Kazuo / Zhang, Paul Lining / Berger, Paul R. et al. | 2018
- 1205
-
Gettering Sinks for Metallic Impurities Formed by Carbon-Cluster Ion Implantation in Epitaxial Silicon Wafers for CMOS Image SensorOnaka-Masada, Ayumi / Okuyama, Ryosuke / Shigematsu, Satoshi / Okuda, Hidehiko / Kadono, Takeshi / Hirose, Ryo / Koga, Yoshihiro / Sueoka, Koji / Kurita, Kazunari et al. | 2018
- 1212
-
Rigidity Enhancement of GeO2 by Y-Doping for Reliable Ge Gate StacksNishimura, Tomonori / Tang, Xiaoyu / Lu, Cimang / Yajima, Takeaki / Toriumi, Akira et al. | 2018
- 1218
-
P-Channel and N-Channel Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Ultralow Power CMOSMori, Takayuki / Ida, Jiro et al. | 2018
- 1225
-
Electrode Material Dependence of Resistance Change Behavior in Ta2O5 Resistive Analog Neuromorphic DeviceShima, Hisashi / Takahashi, Makoto / Naitoh, Yasuhisa / Akinaga, Hiroyuki et al. | 2018
- 1232
-
Ge FinFET CMOS Inverters With Improved Channel Surface Roughness by Using In-Situ ALD Digital O3 TreatmentYeh, M.-S. / Luo, G.-L. / Hou, F.-J. / Sung, P.-J. / Wang, C. J. / Su, C.-J. / WU, C.-T. / Huang, Y.-C. / Hong, T.-C. / Chen, B.-Y. et al. | 2018
- 1238
-
Ultra-High-Efficiency Writing in Voltage-Control Spintronics Memory (VoCSM): The Most Promising Embedded Memory for Deep LearningOhsawa, Y. / Yoda, H. / Shimomura, N. / Shirotori, S. / Fujita, S. / Koi, K. / Buyandalai, A. / Oikawa, S. / Shimizu, M. / Kato, Y. et al. | 2018
- 1244
-
Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM LayoutAnju, Eisuke / Muneta, Iriya / Kakushima, Kuniyuki / Tsutsui, Kazuo / Wakabayashi, Hitoshi et al. | 2018
- 1251
-
Sputter-Deposited-MoS2 ${n}$ MISFETs With Top-Gate and Al2O3 Passivation Under Low Thermal Budget for Large Area IntegrationMatsuura, Kentaro / Shimizu, Jun'Ichi / Toyama, Mayato / Ohashi, Takumi / Muneta, Iriya / Ishihara, Seiya / Kakushima, Kuniyuki / Tsutsui, Kazuo / Ogura, Atsushi / Wakabayashi, Hitoshi et al. | 2018
- 1258
-
Origin of High Mobility in InSnZnO MOSFETsSaito, Nobuyoshi / Ueda, Tomomasa / Tezuka, Tsutomu / Ikeda, Keiji et al. | 2018
- 1258
-
2018 IndexIEEE Journal of the Electron Devices SocietyVol. 6| 2018
- C1
-
Table of contents| 2018
- C2
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IEEE Journal of the Electron Devices Society publication information| 2018
- C3
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IEEE Journal of the Electron Devices Society information for authors| 2018