Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure (English)
- New search for: Wei Cao,
- New search for: Yao, C J
- New search for: Jiao, G F
- New search for: Daming Huang,
- New search for: Yu, H Y
- New search for: Ming-Fu Li,
- New search for: Wei Cao,
- New search for: Yao, C J
- New search for: Jiao, G F
- New search for: Daming Huang,
- New search for: Yu, H Y
- New search for: Ming-Fu Li,
In:
IEEE Transactions on Electron Devices
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58
, 7
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2122-2126
;
2011
- Article (Journal) / Electronic Resource
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Title:Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure
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Contributors:Wei Cao, ( author ) / Yao, C J ( author ) / Jiao, G F ( author ) / Daming Huang, ( author ) / Yu, H Y ( author ) / Ming-Fu Li, ( author )
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Published in:IEEE Transactions on Electron Devices ; 58, 7 ; 2122-2126
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Publisher:
- New search for: IEEE
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Publication date:2011-07-01
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Size:643182 byte
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 58, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1819
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Changes in the Editorial BoardVerret, Doug et al. | 2011
- 1822
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Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser AnnealingSmith, J T / Sandow, C / Das, S / Minamisawa, R A / Mantl, S / Appenzeller, J et al. | 2011
- 1822
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Silicon and Column IV Semiconductor Devices - Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser AnnealingSmith, J T et al. | 2011
- 1830
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A Unified Carrier-Transport Model for the Nanoscale Surrounding-Gate MOSFET Comprising Quantum–Mechanical EffectsGuangxi Hu, / Jinglun Gu, / Shuyan Hu, / Ying Ding, / Ran Liu, / Ting-Ao Tang, et al. | 2011
- 1837
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A 60-GHz Millimeter-Wave CMOS Integrated On-Chip Antenna and Bandpass FilterHuey-Ru Chuang, / Lung-Kai Yeh, / Pei-Chun Kuo, / Kai-Hsiang Tsai, / Han-Lin Yue, et al. | 2011
- 1846
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Performance and Yield Benefits of Quasi-Planar Bulk CMOS Technology for 6-T SRAM at the 22-nm NodeChanghwan Shin, / Damrongplasit, N / Xin Sun, / Tsukamoto, Y / Nikolic, B / Tsu-Jae King Liu, et al. | 2011
- 1855
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A Tunnel FET for Formula Not Shown Scaling Below 0.6 V With a CMOS-Comparable PerformanceAsra, R. / Shrivastava, M. / Murali, K. V. / Pandey, R. K. / Gossner, H. / Rao, V. R. et al. | 2011
- 1855
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A Tunnel FET for $V_{DD}$ Scaling Below 0.6 V With a CMOS-Comparable PerformanceAsra, R / Shrivastava, M / Murali, K V R M / Pandey, R K / Gossner, H / Rao, V R et al. | 2011
- 1864
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Three-Dimensional Simulation of Charge-Trap Memory Programming—Part I: Average BehaviorAmoroso, S M / Maconi, A / Mauri, A / Compagnoni, Christian Monzio / Spinelli, A S / Lacaita, A L et al. | 2011
- 1872
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Three-Dimensional Simulation of Charge-Trap Memory Programming—Part II: VariabilityMaconi, A / Amoroso, S M / Compagnoni, C M / Mauri, A / Spinelli, A S / Lacaita, A L et al. | 2011
- 1879
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Impacts of Nanocrystal Location on the Operation of Trap-Layer-Engineered Poly-Si Nanowired Gate-All-Around SONOS Memory DevicesCheng-Wei Luo, / Horng-Chih Lin, / Ko-Hui Lee, / Wei-Chen Chen, / Hsing-Hui Hsu, / Tiao-Yuan Huang, et al. | 2011
- 1886
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Pulsed Method for Characterizing Aqueous Media Using Nanowire Field Effect TransistorsMescher, M / Marcelis, B / de Smet, L C P M / Sudholter, E J R / Klootwijk, J H et al. | 2011
- 1892
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LAyer Selection by ERase (LASER) With an Etch-Through-Spacer Technique in a Bit-Line Stacked 3-D nand Flash Memory ArrayJang-Gn Yun, / Se Hwan Park, / Byung-Gook Park, et al. | 2011
- 1898
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On Different Process Schemes for MOSFETs With a Controllable NiSi-Based Metallic Source/DrainJun Luo, / Dongping Wu, / Zhijun Qiu, / Jun Lu, / Hultman, L / Ostling, M / Shi-Li Zhang, et al. | 2011
- 1907
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Vertical Silicon p-n-p-n Tunnel nMOSFET With MBE-Grown Tunneling JunctionTura, A / Zhenning Zhang, / Peichi Liu, / Ya-Hong Xie, / Woo, Jason C S et al. | 2011
- 1914
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Semiself-Protection Scheme for Gigahertz High-Frequency Output ESD ProtectionJian-Hsing Lee, / Shao-Chang Huang, / Hung-Der Su, / Ke-Horng Chen, et al. | 2011
- 1922
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Performance Comparison of Single- and Dual-Gate Carbon-Nanotube Thin-Film Field-Effect TransistorsNarasimhamurthy, K C / Paily, R et al. | 2011
- 1928
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RF Performance Potential of Array-Based Carbon-Nanotube Transistors—Part I: Intrinsic ResultsPaydavosi, N / Alam, A U / Ahmed, S / Holland, K D / Rebstock, J P / Vaidyanathan, M et al. | 2011
- 1941
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RF Performance Potential of Array-Based Carbon-Nanotube Transistors—Part II: Extrinsic ResultsPaydavosi, N / Rebstock, J P / Holland, K D / Ahmed, S / Alam, A U / Vaidyanathan, M et al. | 2011
- 1952
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A Double-Heterojunction Bipolar Transistor Having a Degenerately Doped Emitter and Backward-Diode Base ContactCohen-Elias, D / Kraus, S / Cohen, S / Gavrilov, A / Ritter, D et al. | 2011
- 1952
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Compound Semiconductor Devices - A Double-Heterojunction Bipolar Transistor Having a Degenerately Doped Emitter and Backward-Diode Base ContactCohen-Elias, D et al. | 2011
- 1957
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Contact and Channel 3rd-Order Nonlinearity in III-N HFETsKhan, B M / Simin, G S et al. | 2011
- 1963
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Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETsKharche, N / Klimeck, G / Kim, D / del Alamo, J A / Luisier, M et al. | 2011
- 1972
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Analysis of Electron Mobility in Inversion-Mode Formula Not Shown MOSFETsWang, W. / Hwang, J. C. / Xuan, Y. / Ye, P. D. et al. | 2011
- 1972
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Analysis of Electron Mobility in Inversion-Mode $ \hbox{Al}_{2}\hbox{O}_{3}/\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ MOSFETsWeike Wang, / Hwang, J C M / Yi Xuan, / Ye, P D et al. | 2011
- 1972
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Analysis of Electron Mobility in Inversion-Mode Al2O3/InxGa1-xAs MOSFETsWang, W et al. | 2011
- 1979
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Numerical Analysis of Forward-Current/Voltage Characteristics of Vertical GaN Schottky-Barrier Diodes and p-n Diodes on Free-Standing GaN SubstratesMochizuki, K / Mishima, T / Terano, A / Kaneda, N / Ishigaki, T / Tsuchiya, T et al. | 2011
- 1986
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Analysis of Reverse Leakage Current and Breakdown Voltage in GaN and InGaN/GaN Schottky BarriersWei Lu, / Lingquan Wang, / Siyuan Gu, / Aplin, D P R / Estrada, D M / Yu, P K L / Asbeck, P M et al. | 2011
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- 1995
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Electrical-Stress-Induced Threshold Voltage Instability in Solution-Processed ZnO Thin-Film Transistors: An Experimental and Simulation StudyGupta, D / Seunghyup Yoo, / Changhee Lee, / Yongtaek Hong, et al. | 2011
- 2003
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Improved Subthreshold Swing and Gate-Bias Stressing Stability of p-Type Cu2O Thin-Film Transistors Using a HfO2 High-k Gate Dielectric Grown on a SiO2/Si Substrate by Pulsed Laser AblationZou, X et al. | 2011
- 2003
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Improved Subthreshold Swing and Gate-Bias Stressing Stability of p-Type $\hbox{Cu}_{2}\hbox{O}$ Thin-Film Transistors Using a $\hbox{HfO}_{2}$ High- $k$ Gate Dielectric Grown on a $\hbox{SiO}_{2}/\hbox{Si}$ Substrate by Pulsed Laser AblationXiao Zou, / Guojia Fang, / Jiawei Wan, / Xun He, / Haoning Wang, / Nishuang Liu, / Hao Long, / Xingzhong Zhao, et al. | 2011
- 2008
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Symmetric Vertical-Channel Nickel-Salicided Poly-Si Thin-Film Transistors With Self-Aligned Oxide Overetching StructuresYi-Hong Wu, / Po-Yi Kuo, / Yi-Hsien Lu, / Yi-Hsuan Chen, / Tsung-Yu Chiang, / Kuan-Ti Wang, / Li-Chen Yen, / Tien-Sheng Chao, et al. | 2011
- 2014
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Integration of Solar Cells on Top of CMOS Chips Part I: a-Si Solar CellsLu, J / Kovalgin, A Y / van der Werf, K H M / Schropp, R E I / Schmitz, J et al. | 2011
- 2022
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Comparison of Quantum Dots-in-a-Double-Well and Quantum Dots-in-a-Well Focal Plane Arrays in the Long-Wave InfraredAndrews, J R / Restaino, S R / Teare, S W / Sharma, Y D / Jang, W / Vandervelde, T E / Brown, J S / Reisinger, A / Sundaram, M / Krishna, S et al. | 2011
- 2022
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Optoelectronics, Displays, and Imaging - Comparison of Quantum Dots-in-a-Double-Well and Quantum Dots-in-a-Well Focal Plane Arrays in the Long-Wave InfraredAndrews, J R et al. | 2011
- 2028
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Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS TechnologyRichardson, J A / Webster, E A G / Grant, L A / Henderson, R K et al. | 2011
- 2036
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Transparent ZnO Nanowire-Network Ultraviolet PhotosensorShi-Ming Peng, / Yan-Kuin Su, / Liang-Wen Ji, / Sheng-Joue Young, / Chi-Nan Tsai, / Jhih-Hong Hong, / Zong-Syun Chen, / Cheng-Zhi Wu, et al. | 2011
- 2041
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The Effects of Mechanical Bending and Illumination on the Performance of Flexible IGZO TFTsMunzenrieder, N / Cherenack, K H / Troster, G et al. | 2011
- 2049
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Dynamic Analysis of Cascaded Laser Power Converters for Simultaneous High-Speed Data Detection and Optical-to-Electrical DC Power GenerationJin-Wei Shi, / Kuo, F.-M / Chan-Shan Yang, / Lo, S.-S / Ci-Ling Pan, et al. | 2011
- 2057
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Low Specific on-Resistance Power MOS Transistor With Multilayer Carrier Accumulation Breaks the Limit Line of SiliconBaoxing Duan, / Yintang Yang, et al. | 2011
- 2057
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Off-State Degradation of High-Voltage-Tolerant nLDMOS-SCR ESD DevicesGriffoni, A / Shih-Hung Chen, / Thijs, S / Kaczer, B / Franco, J / Linten, D / De Keersgieter, A / Groeseneken, G et al. | 2011
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Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS DevicesTanaka, A / Oritsuki, Y / Kikuchihara, H / Miyake, M / Mattausch, H J / Miura-Mattausch, Mitiko / Liu, Y / Green, K et al. | 2011
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Impacts of Zr Composition in $\hbox{Hf}_{1-x} \hbox{Zr}_{x}\hbox{O}_{y}$ Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability CharacteristicsHyung-Suk Jung, / So-Ah Lee, / Sang-ho Rha, / Sang Young Lee, / Hyo Kyeom Kim, / Do Hyun Kim, / Kyu Hwan Oh, / Jung-Min Park, / Weon-Hong Kim, / Min-Woo Song, et al. | 2011
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Solid-State Device Phenomena - Impacts of Zr Composition in Hf1-xZrxOy Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability CharacteristicsJung, H-S et al. | 2011
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Time-Dependent Many-Particle Simulation for Resonant Tunneling Diodes: Interpretation of an Analytical Small-Signal Equivalent CircuitTraversa, F L / Buccafurri, E / Alarcon, A / Albareda, G / Clerc, R / Calmon, F / Poncet, A / Oriols, X et al. | 2011
- 2113
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The Vibrating Body TransistorGrogg, D / Ionescu, A M et al. | 2011
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Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n StructureWei Cao, / Yao, C J / Jiao, G F / Daming Huang, / Yu, H Y / Ming-Fu Li, et al. | 2011
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Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film TransistorSung-Min Yoon, / Shinhyuk Yang, / Min-Ki Ryu, / Chun-Won Byun, / Soon-Won Jung, / Sang-Hee Ko Park, / Chi-Sun Hwang, / Kyoung-Ik Cho, et al. | 2011
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Vacuum Electron Devices - Influence of Plasma Spraying on the Performance of Oxide CathodesZhang, M et al. | 2011
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A Microionizer for Portable Mass Spectrometers Using Double-Gated Isolated Vertically Aligned Carbon Nanofiber ArraysLiang-Yu Chen, / Velasquez-Garcia, L F / Xiazhi Wang, / Teo, K / Akinwande, A I et al. | 2011
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Experimental Investigation of a High-Power Ka-Band Folded Waveguide Traveling-Wave TubeHuarong Gong, / Yubin Gong, / Tao Tang, / Jin Xu, / Weng-Xiang Wang, et al. | 2011
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