Basic insight about the strain engineering of n-type FinFETs (English)
- New search for: Serra, N.
- New search for: Esseni, D.
- New search for: Serra, N.
- New search for: Esseni, D.
In:
2009 10th International Conference on Ultimate Integration of Silicon
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113-116
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2009
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ISBN:
- Conference paper / Electronic Resource
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Title:Basic insight about the strain engineering of n-type FinFETs
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Contributors:Serra, N. ( author ) / Esseni, D. ( author )
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Published in:
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Publisher:
- New search for: IEEE
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Publication date:2009-03-01
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Size:540564 byte
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ISBN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 5
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Silicon spintronicsAppelbaum, Ian et al. | 2009
- 11
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Advanced SOI CMOS transistor technology for high performance microprocessorsHorstmann, M. / Wiatr, M. / Wei, A. / Hoentschel, J. / Feudel, Th. / Scheiper, Th. / Stephan, R. / Gerhadt, M. / Raab, M. et al. | 2009
- 15
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Pockets engineering impact on mismatch performance on 45nm MOSFET technologiesMezzomo, Cecilia M. / Leyris, Cedric / Josse, Emmanuel / Ghibaudo, Gerard et al. | 2009
- 19
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Correlation of fin shape fluctuations to FinFET electrical variability and noise margins of 6-T SRAM cellsBaravelli, Emanuele / De Marchi, Luca / Jurczak, Malgorzata / Speciale, Nicolo et al. | 2009
- 23
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Efficient simulations of 6σ VT distributions due to Random Discrete DopantsReid, Dave / Millar, Campbell / Roy, Gareth / Roy, Scott / Asenov, Asen et al. | 2009
- 27
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Mobility extraction of UTB n-MOSFETs down to 0.9 nm SOI thicknessSchmidt, M. / Lemme, M.C. / Gottlob, H.D.B. / Kurz, H. / Driussi, F. / Selmi, L. et al. | 2009
- 31
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Accurate effective mobility extraction in SOI MOS transistorsThomas, S.M. / Whall, T.E. / Parker, E.H.C. / Leadley, D.R. / Lander, R.J.P. / Vellianitis, G. / Watling, J.R. et al. | 2009
- 35
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Effect of access resistance on apparent mobility reduction in nano-MOSFETHuet, K. / Saint-Martin, J. / Bournel, A. / Querlioz, D. / Dollfus, P. et al. | 2009
- 39
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Static and low frequency noise characterization of FinFET devicesBennamane, K. / Boutchacha, T. / Ghibaudo, G. / Mouis, M. / Collaert, N. et al. | 2009
- 43
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A unified density gradient approach to ‘ab-initio’ ionised impurity scattering in 3D MC simulations of nano-CMOS variabilityAlexander, C. / Kovac, U. / Roy, G. / Roy, S. / Asenov, A. et al. | 2009
- 47
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Full-3D real-space treatment of surface roughness in double gate MOSFETsBuran, Claudio / Pala, Marco G. / Poli, Stefano / Mouis, Mireille et al. | 2009
- 53
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Exhaustive experimental study of tunnel field effect transistors (TFETs): From materials to architectureLe Royer, C. / Mayer, F. et al. | 2009
- 57
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Simulation study of graphene nanoribbon tunneling transistors including edge roughness effectsGrassi, Roberto / Gnudi, Antonio / Reggiani, Susanna / Gnani, Elena / Baccarani, Giorgio et al. | 2009
- 61
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Computational exploration of novel silicon nanostructuresNishio, Kengo / Ozaki, Taisuke / Morishita, Tetsuya / Shinoda, Wataru / Mikami, Masuhiro et al. | 2009
- 65
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High performance Schottky barrier MOSFETs on UTB SOIUrban, C. / Sandow, C. / Zhao, Q.-T. / Mantl, S. et al. | 2009
- 69
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Interface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETsGhoneim, H. / Knoch, J. / Riel, H. / Webb, D. / Bjork, M.T. / Karg, S. / Lortscher, E. / Schmid, H. / Riess, W. et al. | 2009
- 73
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Characterization of dopant segregated Schottky barrier source/drain contactsGudmundsson, Valur / Hellstrom, Per-Erik / Zhang, Shi-Li / Ostling, Mikael et al. | 2009
- 77
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Impact ionization rates for strained SiGeDinh, Thanh Viet / Jungemann, Christoph et al. | 2009
- 83
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Ge and III/V devices for advanced CMOSHeyns, Marc / Adelmann, Christoph / Brammertz, Guy / Brunco, David / Caymax, Matty / De Jaeger, Brice / Delabie, Annelies / Eneman, Geert / Houssa, Michel / Lin, Dennis et al. | 2009
- 87
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Interface oxide trap characterisation in germanium-on-insulator 0.12 μm PMOS transistors by drain current noise measurementsGyani, J. / Soliveres, S. / Martinez, F. / Valenza, M. / Le Royer, C. / Augendre, E. / Romanjek, K. / Drazek, Charlotte et al. | 2009
- 91
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Intrinsic cut off frequency of Si and GaAs based Resonant Tunneling DiodesBuccafurri, E. / Clerc, R. / Calmon, F. / Pala, M. / Poncet, A. / Ghibaudo, G. et al. | 2009
- 95
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Spectroscopic detection of (i) intrinsic band edge defects, and (ii) transition metal (TM) and rare earth lanthanide (REL) atom occupied states in elemental and complex oxides: A novel pathway to (i) device reliability and (ii) increased functionality in ULSI CMOSLucovsky, Gerald / Hyungtak Seo, / Kwun-Bum Chung, / Jinwu Kim, et al. | 2009
- 99
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Rare-earth based alternative gate dielectrics for future integration in MOSFETsLopes, J.M.J. / Durgun-Ozben, E. / Roeckerath, M. / Littmark, U. / Luptak, R. / Lenk, St. / Besmehn, A. / Breuer, U. / Schubert, J. / Mantl, S. et al. | 2009
- 103
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Quantization effects in silicided and metal gate MOSFETsRodriguez, N. / Gamiz, F. / Clerc, R. / Sampedro, C. / Godoy, A. / Ghibaudo, G. et al. | 2009
- 109
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Performance enhancement of uniaxially-tensile strained Si NW-nFETs fabricated by lateral strain relaxation of SSOIFeste, S.F. / Knoch, J. / Habicht, S. / Buca, D. / Zhao, Q.T. / Mantl, S. et al. | 2009
- 113
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Basic insight about the strain engineering of n-type FinFETsSerra, N. / Esseni, D. et al. | 2009
- 117
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Impact of strain on p-DGMOS performance using full-band Monte Carlo simulationAubry-Fortuna, V. / Huet, K. / Bournel, A. / Rideau, D. / Chassat, C. / Dollfus, P. et al. | 2009
- 121
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Modeling of piezoresistive coefficients in Si hole inversion layersPham, A. T. / Jungemann, C. / Meinerzhagen, B. et al. | 2009
- 125
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Comparison of advanced transport models for nanoscale nMOSFETsPalestri, P. / Alexander, C. / Asenov, A. / Baccarani, G. / Bournel, A. / Braccioli, M. / Cheng, B. / Dollfus, P. / Esposito, A. / Esseni, D. et al. | 2009
- 131
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Implementing brain-like systems using nano functional devicesShibata, Tadashi et al. | 2009
- 135
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Phenomenological considerations of resistively switching TiO2 in nano crossbar arraysNauenheim, C. / Kugeler, C. / Trellenkamp, St. / Rudiger, A. / Waser, R. et al. | 2009
- 139
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Scalability of MSD memory effectHubert, A. / Cristoloveanu, S. / Bawedin, M. / Ernst, T. et al. | 2009
- 143
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A multilayer RRAM nanoarchitecture with resistively switching Ag-doped spin-on glassMeier, M. / Rosezin, R. / Gilles, S. / Rudiger, A. / Kugeler, C. / Waser, R. et al. | 2009
- 147
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Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applicationsOrtolland, C. / Mathew, S. / Duffy, R. / Saino, K. / Kim, C.S. / Mertens, S. / Horiguchi, N. / Vrancken, C. / Chiarella, T. / Kerner, C. et al. | 2009
- 151
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Organic electronicsHeremans, Paul et al. | 2009
- 157
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A comparative study of non-melt laser spike annealing and flash lamp annealing in terms of transistor performance and pattern effects on SOI-CMOSFETs for the 32 nm node and belowIllgen, R. / Flachowsky, S. / Herrmann, T. / Feudel, T. / Thron, D. / Bayha, B. / Klix, W. / Horstmann, M. / Stenzel, R. et al. | 2009
- 161
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Scalability of advanced partially depleted n-MOSFET devices on biaxial strained SOI substratesFlachowsky, S. / Hontschel, J. / Wei, A. / Illgen, R. / Hermann, P. / Herrmann, T. / Klix, W. / Stenzel, R. / Ramirez, A. / Horstmann, M. et al. | 2009
- 165
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Characterisation of CMOS compatible vertical MOSFETs with new architectures through EKV parameter extraction and RF measurementTan, L. / Hakim, M. M. A. / Connor, S. / Bousquet, A. / Redman-White, W. / Ashburn, P. / Hall, S. et al. | 2009
- 173
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Underlap channel UTBB MOSFETs for low—power analog/RF applicationsKranti, A. / Burignat, S. / Raskin, J.-P. / Armstrong, G.A. et al. | 2009
- 177
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The disposable dot FET: A strained silicon channel on top of removed SiGeGerharz, J. / Mussler, G. / Moers, J. / Rinke, G. / Trellenkamp, St. / Grutzmacher, D. et al. | 2009
- 181
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Integration of laser-annealed junctions in a low-temperature high-k metal-gate MISFETBiasotto, Cleber / Jovanovic, Vladimir / Gonda, Viktor / van der Cingel, Johan / Milosavljevic, Silvana / Nanver, Lis K. et al. | 2009
- 185
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Discussion of origins of high-density trap states in SIMOX wafersNakajima, Yoshikata / Toda, Takahiro / Hanajiri, Tatsuro / Toyabe, Toru / Sugano, Takuo et al. | 2009
- 189
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Impact of TiN metal gate thickness and the HfSiO nitridation on MuGFETs electrical performanceRodrigues, M. / Mercha, A. / Simoen, E. / Collaert, N. / Claeys, C. / Martino, J.A. et al. | 2009
- 193
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Peculiarities of electrical properties of metal-insulator-semiconductor capacitors based on high-k dielectric stack containing HfTiSiO:N and HfTiO:N filmsMikhelashvili, V. / Thangadurai, P. / Kaplan, W. D. / Eisenstein, G. et al. | 2009
- 197
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Impact of sputter deposited TaN and TiN metal gates on ZrO2/Ge and ZrO2/Si high-k dielectric gate stacksHenkel, C. / Abermann, S. / Bethge, O. / Klang, P. / Bertagnolli, E. et al. | 2009
- 201
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Detection of strain minimization in Hf-based gate dielectrics by X-ray absorption and non-linear optical second harmonic generation spectroscopyGundogdu, K. / Lucovsky, G. / Chung, K.-B. / Kim, J. / Nordlund, D. et al. | 2009
- 205
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Interfacial and electrical characterization of HfO2 gate dielectric film with a blocking layer of Al2O3Xinhong Cheng, / Dawei He, / Zhaorui Song, / Yuehui Yu, / Qing-Tai Zhao, / DaShen Shen, et al. | 2009
- 209
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Electrical characteristics of atomic layer deposited aluminium oxide and lanthanum-zirconium oxide high-k Dielectric stacksAbermann, S. / Henkel, C. / Bethge, O. / Bertagnolli, E. et al. | 2009
- 213
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A scalable architecture of associative processors employing nano functional devicesTu Bui, Trong / Shibata, Tadashi et al. | 2009
- 217
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A Parzen-window classifier architecture for massively-integrated nanoscale resonant devicesKang, Kyunghee / Shibata, Tadashi et al. | 2009
- 221
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NBTI tolerant 4T double-gate SRAM designEbrahimi, Behzad / Afzali-Kusha, Ali et al. | 2009
- 225
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Using charge self-compensation domino full-adder with multiple supply and dual threshold voltage in 45nm technologyJinhui Wang, / Wuchen Wu, / Ligang Hou, / Shuqin Geng, / Wang Zhang, / Xiaohong Peng, / Na Gong, et al. | 2009
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High-κ Ta2O5 film for resistive switching memory applicationTsai, Y.-R. / Liao, K.-C. / Maikap, S. et al. | 2009
- 233
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A nano-functional-device-based image feature extraction circuitry with current-balancing feedbackYoshii, Kazuma / Shibata, Tadashi et al. | 2009
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CMOS sensor array for bi-directional communication with electrically active cellsYegin, U. / Schindler, M. / Ingebrandt, S. / Eick, S. / Kim, S. K. / Hwang, C.S. / Schindler, C. / Schubert, J. / Schroeder, H. / Kim, S.K. et al. | 2009
- 241
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Power and delay estimation for dynamic OR gates with header and footer transistor based on wavelet neural networksJinhui Wang, / Wuchen Wu, / Zuo Lei, / Ligang hou, / Xiaohong Peng, / Daming Gao, / Na Gong, et al. | 2009
- 245
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Silicon nanowire pinch-off FET : Basic operation and analytical modelSoree, Bart / Magnus, Wim et al. | 2009
- 249
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Sample variability and time stability in scaled silicon nanowiresPierre, M. / Jehl, X. / Wacquez, R. / Vinet, M. / Sanquer, M. / Belli, M. / Prati, E. / Fanciulli, M. / Verduijn, J. / Tettamanzi, G. C. et al. | 2009
- 253
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Effective-mass model of surface scattering in locally oxidized Si nanowiresDrouvelis, P. / Fagas, G. et al. | 2009
- 257
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MESFETs on H-terminated polycrystalline diamondCalvani, P. / Sinisi, F. / Rossi, M. C. / Conte, G. / Giovine, E. / Ciccognani, W. / Limiti, E. et al. | 2009
- 261
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Modeling of Metal-Semiconductor Field-Effect-Transistor on H- terminated polycrystalline diamondPasciuto, B. / Ciccognani, W. / Limiti, E. / Calvani, P. / Rossi, M. C. / Conte, G. et al. | 2009
- 265
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Design considerations for undoped FinFETs based on a 3D compact model for the potential barrierKloes, Alexander / Weidemann, Michaela / Schwarz, Mike / Holtij, Thomas et al. | 2009
- 269
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Compact modeling of quantization effects for cylindrical gate-all-around MOSFETsCousin, Bastien / Rozeau, Olivier / Jaud, Marie-Anne / Jomaah, Jalal et al. | 2009
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Simulation assessment of process options for advanced CMOS devicesKampen, C. / Burenkov, A. / Lorenz, J. / Ryssel, H. et al. | 2009
- 277
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Valley splitting in thin silicon films from a two-band k·p modelSverdlov, V. / Windbacher, T. / Baumgartner, O. / Schanovsky, F. / Selberherr, S. et al. | 2009
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Investigation of the vertical IMOS-transistor by device simulationKraus, Rainer / Jungemann, Christoph et al. | 2009
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Impact of strain on the performance of high-k/metal replacement gate MOSFETsWang, Xingsheng / Roy, Scott / Asenov, Asen et al. | 2009
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Proceedings of the 10th International conference on ULtimate Integration of Silicon| 2009