Role of Defects in the Reliability of HfO2/Si-Based Spacer Dielectric Stacks for Local Interconnects (English)
- New search for: Wu, C.
- New search for: Chasin, A.
- New search for: Padovani, A.
- New search for: Lesniewska, A.
- New search for: Demuynck, S.
- New search for: Croes, K.
- New search for: Wu, C.
- New search for: Chasin, A.
- New search for: Padovani, A.
- New search for: Lesniewska, A.
- New search for: Demuynck, S.
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In:
2019 IEEE International Reliability Physics Symposium (IRPS)
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1-6
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2019
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ISBN:
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- Conference paper / Electronic Resource
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Title:Role of Defects in the Reliability of HfO2/Si-Based Spacer Dielectric Stacks for Local Interconnects
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Contributors:Wu, C. ( author ) / Chasin, A. ( author ) / Padovani, A. ( author ) / Lesniewska, A. ( author ) / Demuynck, S. ( author ) / Croes, K. ( author )
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Publication date:2019-03-01
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Size:615813 byte
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ISBN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Low Voltage Transient RESET Kinetic Modeling of OxRRAM for Neuromorphic ApplicationsDoevenspeck, J. / Degraeve, R. / Fantini, A. / Debacker, P. / Verkest, D. / Lauwereins, R. / Dehaene, W. et al. | 2019
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TCAD Simulation on FinFET n-type Power Device HCI Reliability ImprovementZhu, B. / Bazizi, E. M. / Tng, J.H.M. / Li, Z. / Banghart, E. K. / Hassan, M. K. / Hu, Y. / Zhou, D. / Choi, D. / Qin, L. et al. | 2019
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2019 IEEE International Reliability Physics Symposium| 2019
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Probing Write Error Rate and Random Telegraph Noise of MgO Based Magnetic Tunnel Juction Using a High Throughput Characterization SystemGao, Shifan / Chen, Bing / Xu, Nuo / Qu, Yiming / Zhao, Yi et al. | 2019
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Novel Gyrotron Beam Annealing Method for Mg-Implanted Bulk GaNHogan, K. / Tozier, S. / Rocco, E. / Mahaboob, I. / Meyers, V. / McEwen, B. / Shahedipour-Sandvik, F. / Tompkins, R. / Derenge, M. / Jones, Kenneth et al. | 2019
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VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench GateAsllani, Besar / Castellazzi, Alberto / Salvado, Oriol Avino / Fayyaz, Asad / Morel, Herve / Planson, Dominique et al. | 2019
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Enhanced Fail Rate Projections Using Negative Design Assist in Automotive Grade SRAMsBalasubramanian, Sriram / Balan, Hari / Liu, Lei / Khua, Kevin / Neo, Wah Peng / Sui, Dianji / Simon Chan, Tze Ho et al. | 2019
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Fundamental Understanding of Oxide Defects in HfO2 and Y2O3 on GaAs(001) with High Thermal StabilityWan, H. W. / Hong, Y. J. / Young, L. B. / Hong, M. / Kwo, J. et al. | 2019
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Modeling of Apparent Activation Energy and Lifetime Estimation for Retention of 3D SGVC MemoryHsiao, Wei-Hao / Wang, Nian-Jia / Lee, Ming-Yi / Kuo, Li-Kuang / Lin, Ding-Jhang / Chao, Yen-Hai / Lu, Chih-Yuan et al. | 2019
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Utilizing a Thorough Understanding of Critical Aging and Failure Mechanisms in finFET Technologies to Enable Reliable High Performance CircuitsWeir, Bonnie / Prasad, Vani / Moinian, Shahriar / Park, SangJune / Blasko, Joseph / Brown, Jason / Pallinti, Jayanthi et al. | 2019
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Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive AnalysisFabris, E. / Meneghini, M. / De Santi, C. / Borga, M. / Meneghesso, G. / Zanoni, E. / Kinoshita, Y. / Tanaka, K. / Ishida, H. / Ueda, T. et al. | 2019
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Advanced Circuit Reliability Verification for Robust DesignFan, Antony / Wang, Joddy / Aptekar, Vladimir et al. | 2019
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Alpha Particle Soft-Error Rates for D-FF Designs in 16-Nm and 7-Nm Bulk FinFET TechnologiesCao, J. / Xu, L. / Bhuva, B. L. / Wen, S. -J. / Wong, R. / Narasimham, B. / Massengill, L. W. et al. | 2019
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Design Strategies for Rugged SiC Power DevicesXing, Diana / Liu, Tianshi / Yu, Susanna / Kang, Minseok / Salemi, Arash / White, Marvin / Agarwal, Anant et al. | 2019
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Low-Frequency Noise Measurements to Characterize Cu-Electromigration Down to 44nm Metal PitchBeyne, Sofie / Pedreira, Olalla Varela / De Wolf, Ingrid / Tokei, Zsolt / Croes, Kristof et al. | 2019
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Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI TechnologyNguyen, A.P. / Garros, X. / Rafik, M. / Cacho, F. / Roy, D. / Federspiel, X. / Gaillard, F. et al. | 2019
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A Comparison of Environmental Stressing Data and Simulation at the Corner of a Test Chip in a FC-BGA PackageMallampati, Sandeep / Baig, Zaeem / Pozder, Scott / Chua, Eng Chye et al. | 2019
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2019 IRPS Exhibitors| 2019
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Flight Safety Certification Implications for Complex Multi-Core Processor Based Avionics SystemsAthavale, Jyotika / Mariani, Riccardo / Paulitsch, Michael et al. | 2019
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A Statistical Learning Model for Accurate Prediction of Time-Dependent Dielectric Degradation for Low Failure RatesJoshi, Kaustubh / Lee, Yung-Huei / Yao, Yu-Cheng / Chang, Shu-Wen / Bian, Siao-Syong / Liao, P. J. / Shih, Jiaw-Ren / Chen, Min-Jan et al. | 2019
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Stability of 4H-SiC JBS Diodes Under Repetitive Avalanche StressKanale, Ajit / Han, Kijeong / Jayant Baliga, B. / Bhattacharya, Subhashish et al. | 2019
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First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and InterconnectsMishra, Abhishek / Meersha, Adil / Kranthi, N.K. / Trivedi, Kruti / Variar, Harsha B. / Veenadhari Bellamkonda, N S / Raghavan, Srinivasan / Shrivastava, Mayank et al. | 2019
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Preface| 2019
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Impact of NBTI on Increasing the Susceptibility of FinFET to RadiationSill Torres, Frank / Amrouch, Hussam / Henke, Jorg / Drechsler, Rolf et al. | 2019
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Product Reliability Methods to Enable High Performance CPU'sRechter, Roman / Kwasnick, Robert / Reshef, Almog / Zonensain, Oren / Raz, Tal / Rahman, Anisur / Polasam, Praveen / Levit, Maxim et al. | 2019
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SEIFF: Soft Error Immune Flip-Flop for Mitigating Single Event Upset and Single Event Transient in 10 nm FinFETUemura, Taiki / Lee, Soonyoung / Min, Dahye / Moon, Ihlhwa / Lee, Seungbae / Pae, Sangwoo et al. | 2019
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Comparative Analysis of the Degradation Mechanisms in Logic and I/O FinFET Devices Induced by Plasma DamageHiblot, Gaspard / Liu, Yefan / Hellings, Geert / Van der Plas, Geert et al. | 2019
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Bilayer Passivation Film for Cu Interconnects on Si Interconnect FabricShakoorzadeh, Niloofar / Hanna, Amir / Iyer, Subramanian et al. | 2019
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Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and ModelingWu, Zhicheng / Franco, Jacopo / Claes, Dieter / Rzepa, Gerhard / Roussel, Philippe J. / Collaert, Nadine / Groeseneken, Guido / Linten, Dimitri / Grasser, Tibor / Kaczer, Ben et al. | 2019
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Investigation on Latch-Up Path Between I/O PMOS and Core PMOS in a 0.18-μm CMOS ProcessChen, Chun-Cheng / Ker, Ming-Dou et al. | 2019
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Gaining Confidence - A Review of Silicon Carbide's Reliability StatusKaminski, Nando / Rugen, Sarah / Hoffmann, Felix et al. | 2019
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Physical Insights into the Low Current ESD Failure of LDMOS-SCR and its Implication on Power ScalabilityKarmel Kranthi, Nagothu / Sampath Kumar, B. / Salman, Akram / Boselli, Gianluca / Shrivastava, Mayank et al. | 2019
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Cycling Induced Trap Generation and Recovery Near the Top Select Gate Transistor in 3D NANDZou, Xingqi / Yan, Liang / Jin, Lei / Li, Da / Xu, Feng / Ai, Di / Zhang, An / Liu, Hongtao / Wang, Ming / Li, Wei et al. | 2019
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Investigation of NBTI Dynamic Behavior with Ultra-Fast MeasurementCacho, F. / Federspiel, X. / Nouguier, D. / Diouf, C. et al. | 2019
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Distinguishing Interfacial Hole Traps in (110), (100) High-K Gate StackLiu, Yueyang / Jiang, Xiangwei / Wang, Liwei / En, Yunfei / Wang, Runsheng et al. | 2019
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CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW TechnologiesChen, S.-H. / Linten, D. / Hellings, G. / Simicic, M. / Kaczer, B. / Chiarella, T. / Mertens, H. / Mitard, J. / Mocuta, A. / Horiguchi, N. et al. | 2019
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Comprehensive Study for OFF-State Hot Carrier Degrdation of Scaled nMOSFETs in DRAMLee, Nam-Hyun / Kim, Jongkyun / Son, Donghee / Kim, Kangjun / Seok, Jung Eun et al. | 2019
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Evaluating Impact of Information Uncertainties on Component Reliability AssessmentDas, Diganta / Elburn, Edmond / Pecht, Michael / Sood, Bhanu et al. | 2019
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Stress Migration Followed by Electromigration Reliability TestingPassage, J.M. / Azhari, N. / Lloyd, J.R. et al. | 2019
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Electromigration Early Failures for Cu Pillar Interconnections with an ENEPIG Pad Finish and its SuppressionTsuchiya, Hideaki / Suzumura, Naohito / Shibata, Ryuji / Aono, Hideki / Ogasawara, Makoto / Akiba, Toshihiko / Sakata, Kenji / Nakagawa, Kazuyuki / Funaya, Takuo et al. | 2019
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Single-Event Upset Responses of Dual- and Triple-Well D Flip-Flop Designs in 7-nm Bulk FinFET TechnologyXu, L. / Cao, J. / Bhuva, B. L. / Chatterjee, I. / Wen, S. -J. / Wong, R. / Massengill, L. W. et al. | 2019
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Concise Analytical Expression for Wunsch-Bell 1-D Pulsed Heating and Applications in ESD Using TLPHellings, Geert / Roussel, Philippe / Wang, Nian / Boschke, Roman / Chen, Shih-Hung / Simicic, Marko / Scholz, Mirko / Stoedel, Soeren / Myny, Kris / Linten, Dimitri et al. | 2019
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Process Variation of Pixel Definition and Effects of Flexible OLED Luminance DegradationLee, Jongwon / Kim, Sangkil / Choi, Yoonsuk / Park, Jongwoo et al. | 2019
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$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN GateCanato, E. / Masin, F. / Borga, M. / Zanoni, E. / Meneghini, M. / Meneghesso, G. / Stockman, A. / Banerjee, A. / Moens, P. et al. | 2019
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On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETsParihar, Narendra / Sharma, Uma / Southwick, Richard G. / Wang, Miaomiao / Stathis, James H. / Mahapatra, Souvik et al. | 2019
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Switching Variability Factors in Compliance-Free Metal Oxide RRAMVeksler, D. / Bersuker, G. / Bushmaker, A. W. / Shrestha, P. R. / Cheung, K. P. / Campbell, J. P. et al. | 2019
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Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETsMakarov, A. / Kaczer, B. / Roussel, Ph. / Chasin, A. / Grill, A. / Vandemaele, M. / Hellings, G. / El-Sayed, A.-M. / Grasser, T. / Linten, D. et al. | 2019
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Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate DevicesO'Sullivan, B.J. / Ritzenthaler, R. / Rzepa, G. / Wu, Z. / Litta, E. Dentoni / Richard, O. / Conard, T. / Machkaoutsan, V. / Fazan, P. / Kim, C. et al. | 2019
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Soft Error Performance of High-Speed Pulsed-DICE-Latch Design in 16 nm and 7 nm FinFET ProcessesNarasimham, B. / Chandrasekharan, K. / Wang, J. K. / Bhuva, B. L. et al. | 2019
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Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI TechnologyJi, Y. / Goo, H. J. / Lim, J. / Lee, S. B. / Lee, S. / Uemura, T. / Park, J. C. / Han, S. I. / Shin, S. C. / Lee, J. H. et al. | 2019
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Efficient Simulation of Electromigration Damage in Large Chip Power Grids Using Accurate Physical Models (Invited Paper)Najm, Farid N. / Sukharev, Valeriy et al. | 2019
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Reliability Analysis of a Delay-Locked Loop Under HCI and BTI DegradationDhar, Tonmoy / Sapatnekar, Sachin S. et al. | 2019
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On the Effect of NBTI Induced Aging of Power Stage on the Transient Performance of On-Chip Voltage RegulatorsKrishna Chekuri, Venkata Chaitanya / Singh, Arvind / Dasari, Nihar / Mukhopadhyay, Saibal et al. | 2019
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Response of Switching Hole Traps in the Small-Area P-MOSFET Under Channel Hot-Hole EffectJu, X. / Ang, D. S. et al. | 2019
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A New Approach to Validate GaN FET Reliability to Power-Line Surges Under Use-ConditionsBahl, Sandeep R. / Brohlin, Paul et al. | 2019
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High Resolution Observation of Subsurface Defects at SiO2/4H-SiC Interfaces by Local Deep Level Transient Spectroscopy Based on Time-Resolved Scanning Nonlinear Dielectric MicroscopyYamagishi, Yuji / Cho, Yasuo et al. | 2019
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Characterization and Modelling of High Speed Ge Photodetectors ReliabilitySy, F. / Rafhay, Q. / Poette, J. / Grosa, G. / Besset, C. / Beylier, G. / Grosse, P. / Roy, D. / Broquin, J.-E. et al. | 2019
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Copyright Page| 2019
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Reliability Evaluation of Silicon Interconnect Fabric TechnologyThankappan, Kannan K. / Bajwa, Adeel / Vaisband, Boris / Jangam, SivaChandra / Iyer, Subramanian S. et al. | 2019
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A Physical-Statistical Approach to AlGaN/GaN HEMT ReliabilityMoens, Peter / Stockman, Arno et al. | 2019
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Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETsHabersat, Daniel B. / Green, Ronald / Lelis, Aivars J. et al. | 2019
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Recent Updates to Transistor Level Reliability AnalysisSchaldenbrand, Art / Xie, Jushan / Elhak, Hany et al. | 2019
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Positive Bias Instability in ZnO TFTs with Al2O3 Gate DielectricBolshakov, Pavel / Rodriguez-Davila, Rodolfo A. / Quevedo-Lopez, Manuel / Young, Chadwin D. et al. | 2019
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Variation-Aware Physics-Based Electromigration Modeling and Experimental Calibration for VLSI InterconnectsNair, Sarath Mohanachandran / Bishnoi, Raiendra / Tahoori, Mehdi B. / Zahedmanesh, Houman / Croes, Kristof / Garello, Kevin / Kar, Gouri Sankar / Catthoor, Francky et al. | 2019
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Do Solar Proton Events Reduce the Number of Faults in Supercomputers?: A Comparative Analysis of Faults During and without Solar Proton EventsMcKay Bowen, Claire / DeBardeleben, Nathan / Blanchard, Sean / Anderson-Cook, Christine et al. | 2019
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Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered BarriersPadovani, Andrea / Pesic, Milan / Kumar, Mondol Anik / Blomme, Pieter / Subirats, Alexandre / Vadakupudhupalayam, Senthil / Baten, Zunaid / Larcher, Luca et al. | 2019
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Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMsLiao, Wang / Hashimoto, Masanori / Manabe, Seiya / Watanabe, Yukinobu / Abe, Shin-Ichiro / Nakano, Keita / Takeshita, Hayato / Tampo, Motonobu / Takeshita, Soshi / Miyake, Yasuhiro et al. | 2019
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Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet TransistorWang, Miaomiao / Zhang, Jingyun / Zhou, Huimei / Southwick, Richard G. / Kuo Chao, Robin Hsin / Miao, Xin / Basker, Veeraraghavan S. / Yamashita, Tenko / Guo, Dechao / Karve, Gauri et al. | 2019
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Tolerance of Deep Neural Network Against the Bit Error Rate of NAND Flash MemoryHasan, Mehedi / Ray, Biswajit et al. | 2019
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Reliability Issues in Analog ReRAM Based Neural-Network ProcessorYasuhara, Ryutaro / Ono, Takashi / Mochida, Reiji / Muraoka, Shunsaku / Kouno, Kazuyuki / Katayama, Koji / Hayata, Yuriko / Nakayama, Masayoshi / Suwa, Hitoshi / Hayakawa, Yukio et al. | 2019
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Design-For-Reliability Flow in 7nm Products with Data Center and Automotive ApplicationsAhn, Jae-Gyung / Chen, I-Ru / Yeh, Ping-Chin / Chang, Jonathan et al. | 2019
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Reliability Challenges with Materials for Analog ComputingCartier, Eduard A. / Kim, Wanki / Gong, Nanbo / Gokmen, Tayfun / Frank, Martin M. / Bishop, Douglas M. / Kim, Youngseok / Kim, Seyoung / Ando, Takashi / Wu, Ernest Y. et al. | 2019