Cutoff frequency and propagation delay time of 1.5-nm gate oxide CMOS (English)
- New search for: Momose, H.S.
- New search for: Morifuji, E.
- New search for: Yoshitomi, T.
- New search for: Ohguro, T.
- New search for: Saito, M.
- New search for: Iwai, H.
- New search for: Momose, H.S.
- New search for: Morifuji, E.
- New search for: Yoshitomi, T.
- New search for: Ohguro, T.
- New search for: Saito, M.
- New search for: Iwai, H.
In:
IEEE Transactions on Electron Devices
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48
, 6
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1165-1174
;
2001
- Article (Journal) / Electronic Resource
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Title:Cutoff frequency and propagation delay time of 1.5-nm gate oxide CMOS
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Contributors:Momose, H.S. ( author ) / Morifuji, E. ( author ) / Yoshitomi, T. ( author ) / Ohguro, T. ( author ) / Saito, M. ( author ) / Iwai, H. ( author )
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Published in:IEEE Transactions on Electron Devices ; 48, 6 ; 1165-1174
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Publisher:
- New search for: IEEE
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Publication date:2001-06-01
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Size:252588 byte
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 48, Issue 6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1027
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Changes in the editorial boardVerret, D. et al. | 2001
- 1028
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PAPERS - Compound Semiconductor Devices - A Vertical Resonant Tunneling Transistor for Application in Digital Logic CircuitsStock, J. et al. | 2001
- 1028
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A vertical resonant tunneling transistor for application in digital logic circuitsStock, J. / Malindretos, J. / Indlekofer, K.M. / Pottgens, M. / Forster, A. / Luth, H. et al. | 2001
- 1033
-
Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrierChang-You Chen, / Chang, E.Y. / Li Chang, / Szu-Hun Chen, et al. | 2001
- 1033
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PAPERS - Compound Semiconductor Devices - Backside Copper Metallization of GaAs MESFETs Using TaN as the Diffusion BarrierChen, C.-Y. et al. | 2001
- 1037
-
Enhancement-mode Al/sub 0.66/In/sub 0.34/As/Ga/sub 0.67/In/sub 0.33/As metamorphic HEMT, modeling and measurementsBoudrissa, M. / Delos, E. / Gaquiere, C. / Rousseau, M. / Cordier, Y. / Theron, D. / Jaeger, J.C. et al. | 2001
- 1037
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PAPERS - Compound Semiconductor Devices - Enhancement-Mode Al0.66In0.34As-Ga0.67In0.33As Metamorphic HEMT: Modeling and MeasurementsBoudrissa, M. et al. | 2001
- 1045
-
A comparison between Monte Carlo and extended drift-diffusion models for abrupt InP/InGaAs HBTsGarcias-Salva, P. / Lopez-Gonzalez, J.M. / Prat, L. et al. | 2001
- 1045
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PAPERS - Compound Semiconductor Devices - A Comparison Between Monte Carlo and Extended Drift-Diffusion Models for Abrupt InP-InGaAs HBTsGarcias-Salvà, P. et al. | 2001
- 1054
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On the multiple negative-differential-resistance (MNDR) InGaP-GaAs resonant tunneling bipolar transistorsWen-Chau Liu, / Hsi-Jen Pan, / Wei-Chou Wang, / Shun-Ching Feng, / Kun-Wei Lin, / Kuo-Hui Yu, / Lih-Wen Laih, et al. | 2001
- 1054
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PAPERS - Compound Semiconductor Devices - On the Multiple Negative-Differential-Resistance (MNDR) InGaP-GaAs Resonant Tunneling Bipolar TransistorsLiu, W.-C. et al. | 2001
- 1060
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High-performance bottom electrode organic thin-film transistorsKymissis, I. / Dimitrakopoulos, C.D. / Purushothaman, S. et al. | 2001
- 1060
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PAPERS - Materials Processing and Packaging - High-Performance Bottom Electrode Organic Thin-Film TransistorsKymissis, I. et al. | 2001
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Effects of current spreading on the performance of GaN-based light-emitting diodesHyunsoo Kim, / Seong-Ju Park, / Hyunsang Hwang, et al. | 2001
- 1065
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PAPERS - Optoelectronics, Displays, Imaging - Effects of Current Spreading on the Performance of GaN-Based Light-Emitting DiodesKim, H. et al. | 2001
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PAPERS - Optoelectronics, Displays, Imaging - A Novel Air-Bridge Type Gate-Data Line-Crossover Reducing Signal Delay for Large-Size TFT-LCD PanelPark, J.-W. et al. | 2001
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A novel air-bridge type gate-data line-crossover reducing signal delay for large-size TFT-LCD panelJin-Woo Park, / Ji-Hoon Kang, / Min-Cheol Lee, / Min-Koo Han, et al. | 2001
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PAPERS - Optoelectronics, Displays, Imaging - Excess Noise Analysis of Separate Absorption Multiplication Region Superlattice Avalanche PhotodiodesShih, N.-F. et al. | 2001
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Excess noise analysis of separate absorption multiplication region superlattice avalanche photodiodesNeng-Fu Shih, et al. | 2001
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A new method to reduce addressing time in a large AC plasma display panelChung-Hoo Park, / Dong-Hyun Kim, / Sung-Hyun Lee, / Jae-Hwa Ryu, / Jung-Soo Cho, et al. | 2001
- 1082
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PAPERS - Optoelectronics, Displays, Imaging - A New Method to Reduce Addressing Time in a Large AC Plasma Display PanelPark, C.-H. et al. | 2001
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Characteristics of low-temperature poly-Si TFTs on Al/glass substratesMishima, Y. / Yoshino, K. / Takei, M. / Sasaki, N. et al. | 2001
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PAPERS - Optoelectronics, Displays, Imaging - Characteristics of Low-Temperature Poly-Si TFTs on Al-Glass SubstratesMishima, Y. et al. | 2001
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High-performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstrationMasini, C. / Calace, L. / Assanto, G. / Hsin-Chiao Luan, / Kimerling, L.C. et al. | 2001
- 1092
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PAPERS - Optoelectronics, Displays, Imaging - High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: From Model to DemonstrationMasini, G. et al. | 2001
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- 1109
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PAPERS - Silicon Devices - Characterization of Soft Breakdown in Thin Oxide NMOSFETs Based on the Analysis of the Substrate CurrentCrupi, F. et al. | 2001
- 1109
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Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate currentCrupi, F. / Iannaccone, G. / Crupi, I. / Degraeve, R. / Groeseneken, G. / Maes, H.E. et al. | 2001
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PAPERS - Silicon Devices - SiGe Source-Drain Structure for the Suppression of the Short-Channel Effect of Sub-0.1-mm p-Channel MOSFETsNishiyama, A. et al. | 2001
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SiGe source/drain structure for the suppression of the short-channel effect of sub-0.1-/spl mu/m p-channel MOSFETsNishiyama, A. / Matsuzawa, K. / Takagi, S. et al. | 2001
- 1114
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SiGe source/drain structure for the suppression of the short-channel effect of sub-0.1- mu m p-channel MOSFETsNishiyama, A. / Matsuzawa, K. / Takagi, S. et al. | 2001
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PAPERS - Silicon Devices - The Impact of Interconnection and Dielectric Materials on the Time Delay of Scaled Memory-Adder SystemsNikolic, K. et al. | 2001
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- 1127
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Hole trapping and trap generation in the gate silicon dioxideZhang, J.F. / Sii, H.K. / Groeseneken, G. / Degraeve, R. et al. | 2001
- 1127
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PAPERS - Silicon Devices - Hole Trapping and Trap Generation in the Gate Silicon DioxideZhang, J.F. et al. | 2001
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Ultrathin gate oxide CMOS with nondoped selective epitaxial Si channel layerMomose, H.S. / Ohguro, T. / Morifuji, E. / Sugaya, H. / Nakamura, S. / Iwai, H. et al. | 2001
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PAPERS - Silicon Devices - Ultrathin Gate Oxide CMOS with Nondoped Selective Epitaxial Si Channel LayerMomose, H.S. et al. | 2001
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An investigation of laser annealed and metal-induced crystallized polycrystalline silicon thin-film transistorsMurley, D. / Young, N. / Trainor, M. / McCulloch, D. et al. | 2001
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PAPERS - Silicon Devices - An Investigation of Laser Annealed and Metal-Induced Crystallized Polycrystalline Silicon Thin-Film TransistorsMurley, D. et al. | 2001
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Novel cell transistor using retracted Si/sub 3/N/sub 4/-liner STI for the improvement of data retention time in gigabit density DRAM and beyondJooyoung Lee, / Daewon Ha, / Kinam Kim, et al. | 2001
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PAPERS - Silicon Devices - Novel Cell Transistor Using Retracted Si3N4-Liner STI for the Improvement of Data Retention Time in Gigabit Density DRAM and BeyondLee, J. et al. | 2001
- 1159
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Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETsYang, K.N. / Huang, H.T. / Chen, M.J. / Lin, Y.M. / Yu, M.C. / Jang, S.M. / Yu, D.C.H. / Liang, M.S. et al. | 2001
- 1159
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PAPERS - Silicon Devices - Characterization and Modeling of Edge Direct Tunneling (EDT) Leakage in Ultrathin Gate Oxide MOSFETsYang, K.N. et al. | 2001
- 1165
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PAPERS - Silicon Devices - Cutoff Frequency and Propagation Delay Time of 1.5-nm Gate Oxide CMOSMomose, H.S. et al. | 2001
- 1165
-
Cutoff frequency and propagation delay time of 1.5-nm gate oxide CMOSMomose, H.S. / Morifuji, E. / Yoshitomi, T. / Ohguro, T. / Saito, M. / Iwai, H. et al. | 2001
- 1175
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Self-assembled Ge/Si dots for faster field-effect transistorsSchmidt, O.G. / Eberl, K. et al. | 2001
- 1175
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PAPERS - Silicon Devices - Self-Assembled Ge-Si Dots for Faster Field-Effect TransistorsSchmidt, O.G. et al. | 2001
- 1180
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Low-frequency noise of integrated polysilicon resistorsBrederlow, R. / Weber, W. / Dahl, C. / Schmitt-Landsiedel, D. / Thewes, R. et al. | 2001
- 1180
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PAPERS - Silicon Devices - Low-Frequency Noise of Integrated Poly-Silicon ResistorBrederlow, R. et al. | 2001
- 1188
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Hole quantization effects and threshold voltage shift in pMOSFET-assessed by improved one-band effective mass approximationHou, Y.T. / Ming-Fu Li, et al. | 2001
- 1188
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PAPERS - Silicon Devices - Hole Quantization Effects and Threshold Voltage Shift in pMOSFET -- Assessed by Improved One-Band Effective Mass ApproximationHou, Y.T. et al. | 2001
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PAPERS - Silicon Devices - A High-Density DRAM Cell with Built-In Gain StageKamoulakos, G. et al. | 2001
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A high-density DRAM cell with built-in gain stageKamoulakos, G. / Tsiatouhas, Y. / Chrisanthopoulos, A. / Arapoyanni, A. et al. | 2001
- 1200
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Characterization of random reactive ion etched-textured silicon solar cellsZaidi, S.H. / Ruby, D.S. / Gee, J.M. et al. | 2001
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PAPERS - Silicon Devices - Characterization of Random Reactive Ion Etched-Textured Silicon Solar CellsZaidi, S.H. et al. | 2001
- 1207
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PAPERS - Silicon Devices - Impact of CMOS Processing Steps on the Drain Current Kink of NMOSFETs at Liquid Helium TemperatureSimoen, E. et al. | 2001
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Impact of CMOS processing steps on the drain current kink of NMOSFETs at liquid helium temperatureSimoen, E. / Claeys, C. et al. | 2001
- 1216
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PAPERS - Silicon Devices - A Charge Pumping Device with a Potential Barrier Using Inversion Charge TransferChung, I.-Y. et al. | 2001
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A charge pumping device with a potential barrier using inversion charge transferIn-Young Chung, / Young June Park, / Hong Shick Min, et al. | 2001
- 1222
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On the iterative schemes to obtain base doping profiles for reducing base transit time in a bipolar transistorJagadesh Kumar, M. / Patri, V.S. et al. | 2001
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PAPERS - Solid State Device Phenomena - On the Iterative Schemes to Obtain Base Doping Profiles for Reducing Base Transit Time in a Bipolar TransistorKumar, M.J. et al. | 2001
- 1225
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Effects of rapid thermal annealing on the structural properties of GaN thin filmsChang-Fei Zhu, / Wai-Keung Fong, / Bong-Hung Leung, / Choi-Chin Cheng, / Surya, C. et al. | 2001
- 1225
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PAPERS - Solid State Device Phenomena - Effects of Rapid Thermal Annealing on the Structural Properties of GaN Thin FilmsZhu, C.-F. et al. | 2001
- 1231
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A highly reliable ferroelectric memory technology with SrBi/sub 2/Ta/sub 2/O/sub 9/-based material and metal covering cell structureFajii, E. / Judai, Y. / Ito, T. / Kutsunai, T. / Nagano, Y. / Noma, A. / Nasu, T. / Izutsu, Y. / Mikawa, T. / Yasuoka, H. et al. | 2001
- 1231
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PAPERS - Solid State Device Phenomena - A Highly Reliable Ferroelectric Memory Technology with SrBi2Ta2O9 -Based Material and Metal Covering Cell StructureFujii, E. et al. | 2001
- 1237
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PAPERS - Solid State Device Phenomena - Extraction of Eleven Model Parameters for Consistent Reproduction of Lateral Bipolar Snapback High-Current I-V Characteristics in NMOS DevicesChen, M.-J. et al. | 2001
- 1237
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Extraction of eleven model parameters for consistent reproduction of lateral bipolar snapback high-current I-V characteristics in NMOS devicesMing-Jer Chen, / Hun-Shung Lee, / Shuenn-Tarng Chen, et al. | 2001
- 1245
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Built-in longitudinal field effects in sub-100-nm graded Si/sub 1-x/Ge/sub x/ channel PMOSFETsOuyang, Q.C. / Xiangdong Chen, / Tasch, A.F. / Register, L.F. / Banerjee, S.K. et al. | 2001
- 1245
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PAPERS - Solid State Device Phenomena - Built-in Longitudinal Field Effects in Sub-100-nm Graded Si1-xGex Channel PMOSFETsOuyang, Q.C. et al. | 2001
- 1251
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Radio-frequency performance of a state-of-the-art 0.5-/spl mu/m-rule thin-film SOI power MOSFETMatsumoto, S. / Hiraoka, Y. / Sakai, T. et al. | 2001
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PAPERS - Solid State Device Phenomena - Radio-Frequency Performance of a State-of-the-Art 0.5-mm-Rule Thin-Film SOI Power MOSFETMatsumoto, S. et al. | 2001
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PAPERS - Solid State Power and High Voltage - High-Voltage Power Integrated Circuit Technology Using SOI for Driving Plasma Display PanelsKim, J. et al. | 2001
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High-voltage power integrated circuit technology using SOI for driving plasma display panelsJongdae Kim, / Tae Moon Roh, / Sang-Gi Kim, / Song, Q.S. / Dae Woo Lee, / Jin-Gun Koo, / Kyong-IK Cho, / Dong Sung Ma, et al. | 2001
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PAPERS - Solid State Power and High Voltage - Simulation of Power Heterojunction Bipolar Transistors on Gallium ArsenidePalankovski, V. et al. | 2001
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Simulation of power heterojunction bipolar transistors on gallium arsenidePalankovski, V. / Schultheis, R. / Selberherr, S. et al. | 2001
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A high-efficiency thin-film SOI power MOSFET having a self-aligned offset gate structure for multi-gigahertz applicationsMatsumoto, S. / Hiraoka, Y. / Sakai, T. et al. | 2001
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PAPERS - Solid State Power and High Voltage - A High-Efficiency Thin-Film SOI Power MOSFET Having a Self-Aligned Offset Gate Structure for Multi-Gigahertz ApplicationsMatsumoto, S. et al. | 2001
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BRIEFS - A Trap Generation Closed-Form Statistical Model for Intrinsic Oxide BreakdownHuang, H.-T. et al. | 2001
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A trap generation closed-form statistical model for intrinsic oxide breakdownHuan-Tsung Huang, / Ming-Jer Chen, / Chi-Wen Su, / Jyh-Huei Chen, / Chin-Shan Hou, / Mong-Song Liang, et al. | 2001
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BRIEFS - Impact of N2O Activation Treatment on Junction Characteristics of p+-n Junctions Formed by a Solid Diffusion SourceYang, W.L. et al. | 2001
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Optimization of sub-5-nm multiple-thickness gate oxide formed by oxygen implantationYa-Chin King, / Kuo, C. / Tsu-Jae King, / Chenming Hu, et al. | 2001
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BRIEFS - Optimization of Sub-5-nm Multiple-Thickness Gate Oxide Formed by Oxygen ImplantationKing, Y.-C. et al. | 2001
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BRIEFS - Fabrication of Monolithically-Integrated InAlAs-InGaAs-InP HEMTs and InAs-AlSb-GaSb Resonant Interband Tunneling DiodesFay, P. et al. | 2001
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Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb resonant interband tunneling diodesFay, P. / Lu Jiang, / Xu, Y. / Bernstein, G.H. / Chow, D.H. / Schulman, J.N. / Dunlap, H.L. / de los Santos, H.J. et al. | 2001
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BRIEFS - Post-Processed Cu Inductors with Application to a Completely Integrated 2-GHz VCORogers, J.W.M. et al. | 2001
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CORRESPONDENCE - Correction to "Optimization of the Specific On-Resistance of the COOLMOSTM"Chen, X.-B. et al. | 2001
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Correction to "Optimization of the specific on-resistance of the COOLMOS/sup TM/"Xing-Bi Chen, / Sin, J.K.O. et al. | 2001