0.1- $\mu \text{m}$ Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers (English)
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- New search for: Xu, Dong
- New search for: Chu, K. K.
- New search for: Diaz, J. A.
- New search for: Ashman, M.
- New search for: Komiak, J. J.
- New search for: Pleasant, L. Mt.
- New search for: Creamer, C.
- New search for: Nichols, K.
- New search for: Duh, K. H. G.
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In:
IEEE Electron Device Letters
;
36
, 5
;
442-444
;
2015
- Article (Journal) / Electronic Resource
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Title:0.1- $\mu \text{m}$ Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers
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Contributors:Xu, Dong ( author ) / Chu, K. K. ( author ) / Diaz, J. A. ( author ) / Ashman, M. ( author ) / Komiak, J. J. ( author ) / Pleasant, L. Mt. ( author ) / Creamer, C. ( author ) / Nichols, K. ( author ) / Duh, K. H. G. ( author ) / Smith, P. M. ( author )
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Published in:IEEE Electron Device Letters ; 36, 5 ; 442-444
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Publisher:
- New search for: IEEE
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Publication date:2015-05-01
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Size:620840 byte
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 36, Issue 5
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 423
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Changes to the Editorial BoardChatterjee, Amitava et al. | 2015
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Silicon-Controlled Rectifier for Electrostatic Discharge Protection Solutions With Minimal Snapback and Reduced Overshoot VoltageSun, Ruei-Cheng / Wang, Zhixin / Klebanov, Maxim / Liang, Wei / Liou, Juin J. / Liu, Don-Gey et al. | 2015
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The Effects of Direct Source-to-Drain Tunneling and Variation in the Body Thickness on (100) and (110) Sub-10-nm Si Double-Gate TransistorsCho, Woo-Suhl / Roy, Kaushik et al. | 2015
- 430
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Experimental Proof of the Drain-Side Dielectric Breakdown of HKMG nMOSFETs Under Logic Circuit OperationKupke, Steve / Knebel, Steve / Ocker, Johannes / Slesazeck, Stefan / Agaiby, Rimoon / Trentzsch, Martin / Mikolajick, Thomas et al. | 2015
- 433
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Impact of Source–Drain Series Resistance on Drain Current Mismatch in Advanced Fully Depleted SOI n-MOSFETsIoannidis, E. G. / Theodorou, C. G. / Haendler, S. / Josse, E. / Dimitriadis, C. A. / Ghibaudo, G. et al. | 2015
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Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron TransistorsYang, Zhichao / Nath, Digbijoy N. / Zhang, Yuewei / Khurgin, Jacob B. / Rajan, Siddharth et al. | 2015
- 439
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Common Emitter Current Gain >1 in III-N Hot Electron Transistors With 7-nm GaN/InGaN BaseGupta, Geetak / Ahmadi, Elaheh / Hestroffer, Karine / Acuna, Edwin / Mishra, Umesh K. et al. | 2015
- 442
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0.1- $\mu \text{m}$ Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power AmplifiersXu, Dong / Chu, K. K. / Diaz, J. A. / Ashman, M. / Komiak, J. J. / Pleasant, L. Mt. / Creamer, C. / Nichols, K. / Duh, K. H. G. / Smith, P. M. et al. | 2015
- 445
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GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate DielectricHua, Mengyuan / Liu, Cheng / Yang, Shu / Liu, Shenghou / Fu, Kai / Dong, Zhihua / Cai, Yong / Zhang, Baoshun / Chen, Kevin J. et al. | 2015
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Metal-Semiconductor Field-Effect Transistors With In–Ga–Zn–O Channel Grown by Nonvacuum-Processed Mist Chemical Vapor DepositionDang, Giang T. / Kawaharamura, Toshiyuki / Furuta, Mamoru / Allen, Martin W. et al. | 2015
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Environment-Dependent Bias Stress Stability of P-Type SnO Thin-Film TransistorsHan, Young-Joon / Choi, Yong-Jin / Jeong, Chan-Yong / Lee, Daeun / Song, Sang-Hun / Kwon, Hyuck-In et al. | 2015
- 469
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- 472
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Flexible Quasi-Vertical In-Ga-Zn-O Thin-Film Transistor With 300-nm Channel LengthPetti, Luisa / Frutiger, Andreas / Munzenrieder, Niko / Salvatore, Giovanni A. / Buthe, Lars / Vogt, Christian / Cantarella, Giuseppe / Troster, Gerhard et al. | 2015
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Improved Performance in Mirror-Assisted Back-Contact CMOS Photovoltaic DevicesHung, Yung-Jr / Chen, Jia-Fa / Chun, Chung-Lin et al. | 2015
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Direct-Conversion CMOS X-Ray Imager With $5.6 ~\mu \text{m} \times 6.25~\mu \text{m}$ PixelsParsafar, Alireza / Scott, Christopher C. / El-Falou, Abdallah / Levine, Peter M. / Karim, Karim S. et al. | 2015
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Low ON-State Voltage Optically Triggered Power Transistor for SiC Emitter Turn-OFF ThyristorMojab, Alireza / Mazumder, Sudip K. et al. | 2015
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Formation of Insulated-Gate Bipolar Transistor Highly Activated Anodes via Nickel Silicidation With Dopant SegregationMinamisawa, R. A. / Papadopoulos, C. / Jabrany, R. / Knoll, L. / Corvasce, C. / Rahimo, M. et al. | 2015
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Modified Interface State Charge Model for 4H-SiC Power MOSFETsHisamoto, Digh / Yoshimoto, Hiroyuki / Tega, Naoki et al. | 2015
- 493
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A GaN-Based Insulated-Gate Photoconductive Semiconductor Switch for Ultrashort High-Power Electric PulsesWang, Xinmei / Mazumder, Sudip K. / Shi, Wei et al. | 2015
- 496
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Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM CapacitorsAustin, Dustin Z. / Allman, Derryl / Price, David / Hose, Sallie / Conley, John F. et al. | 2015
- 499
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Vertically Stacked Carbon Nanotube-Based Interconnects for Through Silicon Via ApplicationJiang, Di / Mu, Wei / Chen, Si / Fu, Yifeng / Jeppson, Kjell / Liu, Johan et al. | 2015
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Package-Level Microjet-Based Hotspot Cooling Solution for Microelectronic DevicesHan, Yong / Lau, Boon Long / Zhang, Xiaowu et al. | 2015
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Hybrid Fabrication of Highly Rectifying $p$ - $n$ Homojunction Based on Nanostructured TiO2Hazra, A. / Chattopadhyay, P. P. / Bhattacharyya, Partha et al. | 2015
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A Frequency Stable Vacuum-Sealed Tube High-Power Microwave Vircator Operated at 500 HzParson, Jonathan M. / Lynn, Curtis F. / Scott, Mike C. / Calico, Steve E. / Dickens, James C. / Neuber, vAndreas A. / Mankowski, John J. et al. | 2015
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Spin Analog-to-Digital Convertor Using Magnetic Tunnel Junction and Spin Hall EffectJiang, Yanfeng / Lv, Yang / Jamali, Mahdi / Wang, Jian-Ping et al. | 2015
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EDS Meetings Calendar| 2015
- 525
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IEEE Electron Device Letters information for authors| 2015
- 526
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42nd IEEE PVSC| 2015
- 527
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Table of contents| 2015
- C2
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IEEE Electron Device Letters publication information| 2015