Integer quantum Hall effect in Kekulé-patterned graphene (English)
- New search for: Mohammadi, Yawar
- New search for: Bahrami, Samira
- New search for: Mohammadi, Yawar
- New search for: Bahrami, Samira
In:
Chinese Physics B
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31
, 1
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2022
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Integer quantum Hall effect in Kekulé-patterned graphene
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Contributors:Mohammadi, Yawar ( author ) / Bahrami, Samira ( author )
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Published in:Chinese Physics B ; 31, 1
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Publisher:
- New search for: Chinese Physical Society and IOP Publishing Ltd
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Publication date:2022-01-01
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Size:8 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 31, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Semi-quantum private comparison protocol of size relation with d-dimensional GHZ states*Wang, Bing / Liu, San-Qiu / Gong, Li-Hua et al. | 2022
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFC0805100) and the Fundamental Research Funds for the Central Universities of China (Grant No. PA2020GDGP0052).
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Tunable terahertz transmission behaviors and coupling mechanism in hybrid MoS2 metamaterialsDeng, Yuwang / Zhou, Qingli / Liang, Wanlin / Zhang, Pujing / Zhang, Cunlin et al. | 2022
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First-principles study on improvement of two-dimensional hole gas concentration and confinement in AlN/GaN superlatticesHe, Huihui / Yang, Shenyuan et al. | 2022
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Perpendicular magnetic anisotropy of Pd/Co2 MnSi/NiFe2O4/Pd multilayers on F-mica substratesBai, Qingwang / Guo, Bin / Yin, Qin / Wang, Shuyun et al. | 2022
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Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTsFeng, Ruize / Wang, Bo / Cao, Shurui / Liu, Tong / Su, Yongbo / Ding, Wuchang / Ding, Peng / Jin, Zhi et al. | 2022
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Quality factor enhancement of plasmonic surface lattice resonance by using asymmetric periodsShi, Yunjie / Xiong, Lei / Dong, Yuming / Sun, Degui / Li, Guangyuan et al. | 2022
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Determination of quantum toric error correction code threshold using convolutional neural network decodersWang, Hao-Wen / Xue, Yun-Jia / Ma, Yu-Lin / Hua, Nan / Ma, Hong-Yang et al. | 2022
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A novel low-loss four-bit bandpass filter using RF MEMS switchesHan, Lulu / Wang, Yu / Wu, Qiannan / Zhang, Shiyi / Wang, Shanshan / Li, Mengwei et al. | 2022
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Explosive synchronization in a mobile network in the presence of a positive feedback mechanismQian, Dong-Jie et al. | 2022
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Solving the time-dependent Schrödinger equation by combining smooth exterior complex scaling and Arnoldi propagatorWang, Shun / Jiang, Wei-Chao et al. | 2022
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Bandwidth-tunable silicon nitride microring resonatorsLiu, Jiacheng / Wu, Chao / Xia, Gongyu / Zheng, Qilin / Zhu, Zhihong / Xu et al. | 2022
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Probing structural and electronic properties of divalent metal Mg n+1 and SrMg n (n = 2–12) clusters and their anionsXi, Song-Guo / Li, Qing-Yang / Hu, Yan-Fei / Yuan, Yu-Quan / Zhao, Ya-Ru / Yuan, Jun-Jie / Li, Meng-Chun / Yang, Yu-Jie et al. | 2022
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Study on a novel vertical enhancement-mode Ga 2 O 3 MOSFET with FINFET structureGuo, Liangliang / Zhang, Yuming / Luan, Suzhen / Qiao, Rundi / Jia, Renxu et al. | 2022
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Integer quantum Hall effect in Kekulé-patterned grapheneMohammadi, Yawar / Bahrami, Samira et al. | 2022
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Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistorGuo, Yang-Yan / Han, Wei-Hua / Zhang, Xiao-Di / Chen, Jun-Dong / Yang, Fu-Hua et al. | 2022
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Sensitivity of heavy-ion-induced single event burnout in SiC MOSFETZhang, Hong / Guo, Hong-Xia / Zhang, Feng-Qi / Pan, Xiao-Yu / Liu, Yi-Tian / Gu, Zhao-Qiao / Ju, An-An / Ouyang, Xiao-Ping et al. | 2022
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Nonlinear dynamics analysis of cluster-shaped conservative flows generated from a generalized thermostatted systemLi, Yue / Chen, Zengqiang / Wang, Zenghui / Cang, Shijian et al. | 2022
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