Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells (English)
Paper
- New search for: J Jeschke
- New search for: M Martens
- New search for: S Hagedorn
- New search for: A Knauer
- New search for: A Mogilatenko
- New search for: H Wenzel
- New search for: U Zeimer
- New search for: J Enslin
- New search for: T Wernicke
- New search for: M Kneissl
- New search for: M Weyers
- New search for: J Jeschke
- New search for: M Martens
- New search for: S Hagedorn
- New search for: A Knauer
- New search for: A Mogilatenko
- New search for: H Wenzel
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- New search for: M Kneissl
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In:
Semiconductor Science and Technology
;
33
, 3
;
035015
;
2018
-
ISSN:
- Article (Journal) / Electronic Resource
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Title:Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells
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Subtitle:Paper
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Additional title:Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells
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Contributors:J Jeschke ( author ) / M Martens ( author ) / S Hagedorn ( author ) / A Knauer ( author ) / A Mogilatenko ( author ) / H Wenzel ( author ) / U Zeimer ( author ) / J Enslin ( author ) / T Wernicke ( author ) / M Kneissl ( author )
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Published in:Semiconductor Science and Technology ; 33, 3 ; 035015
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Publisher:
- New search for: Institute of Physics
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Publication date:2018-03-01
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Size:7 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 33, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Review on the dynamics of semiconductor nanowire lasersRobert Röder / Carsten Ronning et al. | 2018
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Operation mode switchable charge-trap memory based on few-layer MoS2Xiang Hou / Xiao Yan / Chunsen Liu / Shijin Ding / David Wei Zhang / Peng Zhou et al. | 2018
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Tunable electric properties of bilayer InSe with different interlayer distances and external electric fieldJimin Shang / Longfei Pan / Xiaoting Wang / Jingbo Li / Zhongming Wei et al. | 2018
- 034003
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The effect of Ge precursor on the heteroepitaxy of Ge1−xSnx epilayers on a Si (001) substratePedram Jahandar / David Weisshaupt / Gerard Colston / Phil Allred / Jorg Schulze / Maksym Myronov et al. | 2018
- 035001
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A comprehensive device modelling of perovskite solar cell with inorganic copper iodide as hole transport materialSyed Zulqarnain Haider / Hafeez Anwar / Mingqing Wang et al. | 2018
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Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit arrayMelih Korkmaz / Bulent Arikan / Y Eren Suyolcu / Bulent Aslan / Uğur Serincan et al. | 2018
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The zinc-loss effect and mobility enhancement of DUV-patterned sol–gel IGZO thin-film transistorsKuan-Hsun Wang / Hsiao-Wen Zan / Olivier Soppera et al. | 2018
- 035004
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Thermoelectric prospects of chemically deposited PbSe and SnSe thin filmsP K Nair / Ana Karen Martínez / Ana Rosa García Angelmo / Enue Barrios Salgado / M T S Nair et al. | 2018
- 035005
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Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designsT Kaul / G Erbert / A Maaßdorf / S Knigge / P Crump et al. | 2018
- 035006
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Above room temperature operation of InGaAs/AlGaAs/GaAs quantum cascade lasersD Pierścińska / P Gutowski / G Hałdaś / A Kolek / I Sankowska / J Grzonka / J Mizera / K Pierściński / M Bugajski et al. | 2018
- 035007
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Determination of the band gap of indium-rich InGaN by means of photoacoustic spectroscopyRobert Oliva / Szymon J Zelewski / Łukasz Janicki / Katarzyna R Gwóźdź / Jarosław Serafińczuk / Mariusz Rudziński / Ekmel Özbay / Robert Kudrawiec et al. | 2018
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Improved performance of AlGaN-based deep ultraviolet light-emitting diode using modulated-taper design for p-AlGaN layerL Lu / G G Ding / Y Zhang / Y H Liu / F J Xu et al. | 2018
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Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth techniqueApurba Chakraborty / Ankush Bag / Partha Mukhopadhyay / Saptarsi Ghosh / Dhrubes Biswas et al. | 2018
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Fully patterned p-channel SnO TFTs using transparent Al2O3 gate insulator and ITO as source and drain contactsD E Guzmán-Caballero / M A Quevedo-López / W De la Cruz / R Ramírez-Bon et al. | 2018
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Selective metallization of amorphous-indium–gallium–zinc-oxide thin-film transistor by using helium plasma treatmentHun Jang / Su Jeong Lee / Yoann Porte / Jae-Min Myoung et al. | 2018
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Current oscillations in Schottky-barrier CNTFET: towards resonant tunneling device operationAhmed Shaker / Mahmoud Ossaimee et al. | 2018
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Suppression of short channel effects in FinFETs using crystalline ZrO2 high-K/Al2O3 buffer layer gate stack for low power device applicationsMeng-Chen Tsai / Chin-I Wang / Yen-Chang Chen / Yi-Ju Chen / Kai-Shin Li / Min-Cheng Chen / Miin-Jang Chen et al. | 2018
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A new coupling mechanism between two graphene electron waveguides for ultrafast switchingWei Huang / Shi-Jun Liang / Elica Kyoseva / Lay Kee Ang et al. | 2018
- 035015
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Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wellsJ Jeschke / M Martens / S Hagedorn / A Knauer / A Mogilatenko / H Wenzel / U Zeimer / J Enslin / T Wernicke / M Kneissl et al. | 2018
- 035016
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Design guideline for Si/organic hybrid solar cell with interdigitated back contact structureAri Bimo Prakoso / Rusli / Zeyu Li / Chenjin Lu / Changyun Jiang et al. | 2018
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Heterostructured semiconductor single-walled carbon nanotube films for solution-processed high-performance field-effect transistorsNoh-Hwal Park / Seung-Hoon Lee / Seung-Hyeon Jeong / Dongyoon Khim / Yun Ho Kim / Sungmi Yoo / Yong-Young Noh / Jang-Joo Kim et al. | 2018
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Defect and Optical Properties of Sb doped and hydrogenated BaSnO3Ankita Sarkar / S K De et al. | 2018
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High-performance polymeric photovoltaic cells with a gold chloride-treated polyacrylonitrile hole extraction interlayerJi-Ho Jeong / Yong-Jin Noh / Seok-Soon Kim / Sung-Nam Kwon / Seok-In Na et al. | 2018