A nitrogen-treated memristive device for tunable electronic synapses (English)
Paper
- New search for: Sangsu Park
- New search for: Manzar Siddik
- New search for: Jinwoo Noh
- New search for: Daeseuk Lee
- New search for: Kibong moon
- New search for: Jiyong Woo
- New search for: Byoung Hun Lee
- New search for: Hyunsang Hwang
- New search for: Sangsu Park
- New search for: Manzar Siddik
- New search for: Jinwoo Noh
- New search for: Daeseuk Lee
- New search for: Kibong moon
- New search for: Jiyong Woo
- New search for: Byoung Hun Lee
- New search for: Hyunsang Hwang
In:
Semiconductor Science and Technology
;
29
, 10
;
104006
;
2014
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ISSN:
- Article (Journal) / Electronic Resource
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Title:A nitrogen-treated memristive device for tunable electronic synapses
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Subtitle:Paper
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Additional title:A nitrogen-treated memristive device for tunable electronic synapses
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Contributors:Sangsu Park ( author ) / Manzar Siddik ( author ) / Jinwoo Noh ( author ) / Daeseuk Lee ( author ) / Kibong moon ( author ) / Jiyong Woo ( author ) / Byoung Hun Lee ( author ) / Hyunsang Hwang ( author )
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Published in:Semiconductor Science and Technology ; 29, 10 ; 104006
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Publisher:
- New search for: Institute of Physics
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Publication date:2014-10-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 29, Issue 10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 100301
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Memristive devicesAndy Thomas et al. | 2014
- 104001
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If it’s pinched it’s a memristorLeon Chua et al. | 2014
- 104002
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Analog resistive switching behavior of Al/Nb2O5/Al deviceH Mähne / H Wylezich / F Hanzig / S Slesazeck / D Rafaja / T Mikolajick et al. | 2014
- 104003
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Electrode-material dependent switching in TaOx memristorsNing Ge / M-X Zhang / Lu Zhang / J Joshua Yang / Zhiyong Li / R Stanley Williams et al. | 2014
- 104004
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TiO2-based memristors and ReRAM: materials, mechanisms and models (a review)Ella Gale et al. | 2014
- 104005
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MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arraysRohit S Shenoy / Geoffrey W Burr / Kumar Virwani / Bryan Jackson / Alvaro Padilla / Pritish Narayanan / Charles T Rettner / Robert M Shelby / Donald S Bethune / Karthik V Raman et al. | 2014
- 104006
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A nitrogen-treated memristive device for tunable electronic synapsesSangsu Park / Manzar Siddik / Jinwoo Noh / Daeseuk Lee / Kibong moon / Jiyong Woo / Byoung Hun Lee / Hyunsang Hwang et al. | 2014
- 104007
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Memristor-based pattern matchingMartin Klimo / Ondrej Such / Ondrej Skvarek / Milan Fratrik et al. | 2014
- 104008
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Using the multi-bit feature of memristors for register files in signed-digit arithmetic unitsDietmar Fey et al. | 2014
- 104009
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Logic with memory: and gates made of organic and inorganic memristive devicesG Baldi / S Battistoni / G Attolini / M Bosi / C Collini / S Iannotta / L Lorenzelli / R Mosca / J S Ponraj / R Verucchi et al. | 2014
- 104010
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Memristor-based ternary content addressable memory (mTCAM) for data-intensive computingLe Zheng / Sangho Shin / Sung-Mo Steve Kang et al. | 2014
- 104011
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MemFlash device: floating gate transistors as memristive devices for neuromorphic computingC Riggert / M Ziegler / D Schroeder / W H Krautschneider / H Kohlstedt et al. | 2014
- 104012
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Solid-state memcapacitive device based on memristive switchJ Flak / E Lehtonen / M Laiho / A Rantala / M Prunnila / T Haatainen et al. | 2014