Defect characteristics of Be+-implanted GaAs/AlAs heterostructures: effect of annealing (English)
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- New search for: S Mitra
- New search for: S Mitra
In:
Semiconductor Science and Technology
;
5
, 11
;
1138-1140
;
1990
- Article (Journal) / Electronic Resource
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Title:Defect characteristics of Be+-implanted GaAs/AlAs heterostructures: effect of annealing
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Contributors:S Mitra ( author )
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Published in:Semiconductor Science and Technology ; 5, 11 ; 1138-1140
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Publication date:1990-11-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 5, Issue 11
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1073
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Alternative small gap materials for IR detectionR Triboulet et al. | 1990
- 1081
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Inter-subband scattering rates in GaAs-GaAlAs heterojunctionsD R Leadley / R J Nicholas / J J Harris / C T Foxon et al. | 1990
- 1088
-
Transverse currents and contact resistances in the quantum Hall regime of Si-MOS structuresG Nachtwei / C Breitlow / O Salchow / H Kruger / R Hermann et al. | 1990
- 1093
-
Zener tunnelling effect on the C-V characteristics of Hg1-xCdxTe MIS structuresR K Bhan / V Dhar / P K Chaudhury / V Gopal / K C Chhabra et al. | 1990
- 1100
-
DLTS investigation of deep levels in bulk GaAs under uniaxial stressC A Londos / T Pavelka et al. | 1990
- 1105
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Misfit strains in epitaxial heterostructures based on semiconducting solid solutions of A4B6 compoundsA N Vasil'ev / V N Nikiforov / I M Malinski / A M Gaskov / R S Georgius et al. | 1990
- 1110
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The graded-gate FET: a MOS device structure for magnetic field sensing applicationsB S Gill / E L Heasell et al. | 1990
- 1115
-
Band structure parameters of Pb0.25Sn0.72Mn0.03Te semimagnetic semiconductorsG Karczewski / L Swierkowski / T Story / A Szczerbakow / J Niewodniczanska-Blinowska / G Bauer et al. | 1990
- 1124
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On excitation and decay mechanisms of the Yb3+ luminescence in InPK Thonke / K Pressel / G Bohnert / A Stapor / J Weber / M Moser / A Molassioti / A Hangleiter / F Scholz et al. | 1990
- 1133
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Electron capture cross sections of the platinum donor level in siliconN Baber / M Asghar / M Zafar Iqbal et al. | 1990
- 1136
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Some results on the dependence of the 2D electron effective mass on temperature and magnetic fieldR Fletcher / M D'Iorio / J J Harris / C T Foxon et al. | 1990
- 1138
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Defect characteristics of Be+-implanted GaAs/AlAs heterostructures: effect of annealingS Mitra et al. | 1990
- 1141
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Resonant Raman scattering in GaAs/AlAs quantum wellsR Springett / W Hayes / M S Skolnick / G W Smith / C R Whitehouse et al. | 1990
- 1145
-
On the Fermi-Thomas screening of remote charges in quantised inversion layers at low temperatureF Berz et al. | 1990
- 1146
-
Disorder-induced mixing of InGaAs/InP multiple quantum wells by phosphorus implantation for optical wave-guidesN J Whitehead / W P Gillin / I V Bradley / B L Weiss / P Claxton et al. | 1990