Theoretical study of optical properties in deep ultraviolet Al-rich AlGaN/AIN quantum wells (English)
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In:
Semiconductor Science and Technology
;
24
, 3
;
035002
;
2009
- Article (Journal) / Electronic Resource
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Title:Theoretical study of optical properties in deep ultraviolet Al-rich AlGaN/AIN quantum wells
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Contributors:Park, S H ( author )
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Published in:Semiconductor Science and Technology ; 24, 3 ; 035002
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Publication date:2009-03-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 24, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 33001
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TOPICAL REVIEW: Trends in the electronic structure of dilute nitride alloysO'Reilly, E.P. et al. | 2009
- 033001
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Trends in the electronic structure of dilute nitride alloysO'Reilly, E P / Lindsay, A / Klar, P J / Polimeni, A / Capizzi, M et al. | 2009
- 035001
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Single halo SDODEL n-MOSFET: an alternative low-cost pseudo-SOI with better analog performanceSarkar, Partha / Mallik, Abhijit / Sarkar, Chandan Kumar et al. | 2009
- 035002
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Theoretical study of optical properties in deep ultraviolet Al-rich AlGaN/AIN quantum wellsPark, S H et al. | 2009
- 035002/1
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Theoretical study of optical properties in deep ultraviolet Al-rich AlGaN/AlN quantum wellsPark, S.H. et al. | 2009
- 035003
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The effect of injection damage on a silicon bipolar low-noise amplifierChai, Changchun / Yang, Yintang / Zhang, Bing / Leng, Peng / Yang, Yang / Rao, Wei et al. | 2009
- 035004
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Analysis of the current–voltage characteristics of the Pd/Au Schottky structure on n-type GaN in a wide temperature rangeRavinandan, M / Rao, P Koteswara / Rajagopal Reddy, V et al. | 2009
- 035005
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Large depletion region at the epitaxial n-ZnSe/GaAs heterointerfaceFrey, A / Lehmann, F / Grabs, P / Gould, C / Schmidt, G / Brunner, K / Molenkamp, L W et al. | 2009
- 035006
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Transparent and conducting ZnO films grown by spray pyrolysisHadjeris, Lazhar / Herissi, Labidi / Assouar, M Badreddine / Easwarakhanthan, Thomas / Bougdira, Jamal / Attaf, Nadhir / Aida, M Salah et al. | 2009
- 035007
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The role of Ce dopant on the electrical properties of GaSb single crystals, measured by far-infrared Fourier transform spectroscopyOlvera-Cervantes, J / Plaza, J L / Diéguez, E et al. | 2009
- 035008
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Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructuresŤapajna, M / Čičo, K / Kuzmík, J / Pogany, D / Pozzovivo, G / Strasser, G / Carlin, J-F / Grandjean, N / Fröhlich, K et al. | 2009
- 035009
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Highly power efficient organic light-emitting diodes based on Cs2CO3 n-doped and MoO3 p-doped carrier transport layersMa, Junwei / Jiang, X Y / Liang, Zhang / Cao, Jin / Zhang, Xiaowen / Zhang, Z L et al. | 2009
- 035010
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A ZnO-based MOSFET with a photo-CVD SiO2 gate oxideYoung, S J / Ji, L W / Chang, S J / Meen, T H / Chen, K J et al. | 2009
- 035011
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In-place bonding of GaAs/InGaAs/GaAs heterostructures to GaAs (0 0 1)Owen, D L / Lackner, D / Pitts, O J / Watkins, S P / Mooney, P M et al. | 2009
- 035012
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Ion beam-induced hydrogen migration in a SiO2/a-Si:H/SiO2 layer stackPantchev, B / Danesh, P / Schmidt, B / Grambole, D / Möller, W et al. | 2009
- 035013
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Temperature-dependent photoreflectance and photoluminescence characterization of the subband structure and built-in electric field of GaAs/GaInAs graded-channel high electron mobility transistor structuresHo, Ching-Hwa / Li, Jian-Shen / Lin, Yu-Shyan et al. | 2009
- 035014
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Comparative study of self-heating effect on electron mobility in nano-scale strained silicon-on-insulator and strained silicon grown on relaxed SiGe-on-insulator n-metal–oxide–semiconductor field-effect transistorsKim, Seong-Je / Shim, Tae-Hun / Choi, Ki-Ryoung / Park, Jea-Gun et al. | 2009
- 035015
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Characteristics of the ZnO thin film transistor by atomic layer deposition at various temperaturesKwon, Semyung / Bang, Seokhwan / Lee, Seungjun / Jeon, Sunyeol / Jeong, Wooho / Kim, Hyungchul / Gong, Su Cheol / Chang, Ho Jung / Park, Hyung-ho / Jeon, Hyeongtag et al. | 2009
- 035016
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Simulation of hole mobility in two-dimensional systemsDonetti, Luca / Gamiz, Francisco / Rodriguez, Noel et al. | 2009
- 035017
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Wave functions and energy levels of acceptors and excitons in GaAs-type semiconductorsEfanov, A V et al. | 2009
- 035017/1
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Wave functions and energy levels of acceptor and excitons in GaAs-type semiconductorsEfanov, A.V. et al. | 2009
- 035018
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Contactless electroreflectance studies of ultra-dilute GaAs1−xBix alloysBhusal, L / Ptak, A J / France, R / Mascarenhas, A et al. | 2009
- 035019
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Novel in situ resistance measurement for the investigation of CIGS growth in a selenization processLiu, Wei / Tian, Jian-Guo / Li, Zu-Bin / He, Qing / Li, Feng-Yan / Li, Chang-Jian / Sun, Yun et al. | 2009
- 035020
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55 W peak power from 1100 nm wavelength 60 µm broad-area laser diodes enabled by reduced carrier accumulation in the waveguidePietrzak, A / Crump, P / Wenzel, H / Staske, R / Erbert, G / Tränkle, G et al. | 2009
- 035020/1
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55 W peak power from 1100 nm wavelength 60 micron broad-area laser diodes enabled by reduced carrier accumulation in the waveguidePietrzak, A. / Crump, P. / Wenzel, H. / Staske, R. / Erbert, G. / Tränkle, G. et al. | 2009