Contactless electroreflectance, photoluminescence and time-resolved photoluminescence of GaInNAs quantum wells obtained by the MBE method with N-irradiation (English)
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In:
Semiconductor Science and Technology
;
26
, 4
;
045012
;
2011
- Article (Journal) / Electronic Resource
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Title:Contactless electroreflectance, photoluminescence and time-resolved photoluminescence of GaInNAs quantum wells obtained by the MBE method with N-irradiation
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Contributors:Baranowski, M ( author ) / Kudrawiec, R ( author ) / Syperek, M ( author ) / Misiewicz, J ( author ) / Zhao, H ( author ) / Sadeghi, M ( author ) / Wang, S M ( author )
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Published in:Semiconductor Science and Technology ; 26, 4 ; 045012
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Publication date:2011-04-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 26, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 043001
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Open quantum dots—probing the quantum to classical transitionFerry, D K / Burke, A M / Akis, R / Brunner, R / Day, T E / Meisels, R / Kuchar, F / Bird, J P / Bennett, B R et al. | 2011
- 43001
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TOPICAL REVIEW: Open quantum dots—probing the quantum to classical transitionFerry, D K et al. | 2011
- 045001
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Structure and characteristics of the high-temperature SiC detectors based on Al ion-implanted p+–n junctionsKalinina, E V / Ivanov, A M / Strokan, N B / Lebedev, A A et al. | 2011
- 045002
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Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high-k dielectrics for nanoscale double-gate MOSFETsDarbandy, Ghader / Ritzenthaler, Romain / Lime, François / Garduño, Ivan / Estrada, Magali / Cerdeira, Antonio / Iñiguez, Benjamin et al. | 2011
- 045003
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Electrical double layer gating in GaAs–(Al,Ga)As heterostructures using tetrabutylammonium bis(trifluoromethylsulfonyl)imideTakagaki, Y / Wirsig, A / Ramsteiner, M / Hey, R / Hucho, C et al. | 2011
- 045004
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Al/Al2O3/Sm2O3/SiO2/Si structure memory for nonvolatile memory applicationPan, Tung-Ming / Chen, Fa-Hsyang et al. | 2011
- 045005
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Crossbar architecture for tera-scale integrationCerofolini, G F / Ferri, M / Romano, E / Suriano, F / Veronese, G P / Solmi, S / Narducci, D et al. | 2011
- 045006
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Combined scheme of UV/ozone and HMDS treatment on a gate insulator for performance improvement of a low-temperature-processed bottom-contact OTFTFan, Ching-Lin / Lin, Yu-Zuo / Huang, Cheng-Han et al. | 2011
- 045007
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Low-temperature roll-to-roll coating procedure of dye-sensitized solar cell photoelectrodes on flexible polymer-based substratesTinguely, Jean-Claude / Solarska, Renata / Braun, Artur / Graule, Thomas et al. | 2011
- 045008
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Capture kinetics at deep-level defects in MBE-grown CdTe layersOlender, Karolina / Wosinski, Tadeusz / Makosa, Andrzej / Kret, Slawomir / Kolkovsky, Valery / Karczewski, Grzegorz et al. | 2011
- 045009
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Defect-enhanced photo-detection at 1550 nm in a silicon waveguide formed via LOCOSLogan, D F / Knights, A P / Jessop, P E / Tarr, N G et al. | 2011
- 045010
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Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switchingRyvkin, Boris S / Avrutin, Eugene A / Kostamovaara, Juha T et al. | 2011
- 045011
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Analysis of trap generation during programming/erasing cycling in silicon nanocrystal memory devicesYang, Xiaonan / Wang, Yong / Zhan, Manhong / Huo, Zongliang / Wang, Qin / Long, Shibing / Liu, Ming et al. | 2011
- 045012
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Contactless electroreflectance, photoluminescence and time-resolved photoluminescence of GaInNAs quantum wells obtained by the MBE method with N-irradiationBaranowski, M / Kudrawiec, R / Syperek, M / Misiewicz, J / Zhao, H / Sadeghi, M / Wang, S M et al. | 2011
- 045013
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Quantitative analysis of carrier activation and redistribution in self-assembled quantum dot (QD) heterostructures using rate equationsLu, Xuejun / Vaillancourt, Jarrod et al. | 2011
- 045014
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Performance simulation of a three-dimensional nanoscale field-effect diodeGatabi, Iman Rezanejad / Raissi, Farshid et al. | 2011
- 045015
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Lateral epitaxial overgrowth of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxyWang, Yongjin / Hu, Fangren / Hane, Kazuhiro et al. | 2011
- 045016
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Laser annealing of thin film electroluminescent devices deposited at a high rate using high target utilization sputteringWakeham, S J / Tsakonas, C / Cranton, W M / Thwaites, M J / Boutaud, G / Koutsogeorgis, D C et al. | 2011
- 045017
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Metal–insulator transition in Si/SiGe heterostructures: mobility, spin polarization and Dingle temperatureGold, A et al. | 2011
- 49501
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CORRIGENDUM: Calculation of the parameters for the Fano resonance in the impurity photocurrent spectrum of semiconductors doped with hydrogen-like donorsYa Aleshkin, V et al. | 2011
- 049501
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Calculation of the parameters for the Fano resonance in the impurity photocurrent spectrum of semiconductors doped with hydrogen-like donorsYa Aleshkin, V / Burdeiny, D I / Gavrilenko, L V et al. | 2011