Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes (English)
Paper
- New search for: T Maekura
- New search for: K Tanaka
- New search for: C Motoyama
- New search for: R Yoneda
- New search for: K Yamamoto
- New search for: H Nakashima
- New search for: D Wang
- New search for: T Maekura
- New search for: K Tanaka
- New search for: C Motoyama
- New search for: R Yoneda
- New search for: K Yamamoto
- New search for: H Nakashima
- New search for: D Wang
In:
Semiconductor Science and Technology
;
32
, 10
;
104001
;
2017
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes
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Subtitle:Paper
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Additional title:Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes
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Contributors:T Maekura ( author ) / K Tanaka ( author ) / C Motoyama ( author ) / R Yoneda ( author ) / K Yamamoto ( author ) / H Nakashima ( author ) / D Wang ( author )
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Published in:Semiconductor Science and Technology ; 32, 10 ; 104001
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Publisher:
- New search for: Institute of Physics
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Publication date:2017-10-01
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Size:6 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 32, Issue 10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 103001
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Spatially selective photochemical activity on surfaces of ferroelastics with local polarizationAjay S Pisat / Gregory S Rohrer / Paul A Salvador et al. | 2017
- 103002
-
The use of anomalous x-ray diffraction as a tool for the analysis of compound semiconductorsDaniel M Többens / Susan Schorr et al. | 2017
- 103003
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GaAs-based micro/nanomechanical resonatorsHiroshi Yamaguchi et al. | 2017
- 104001
-
Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodesT Maekura / K Tanaka / C Motoyama / R Yoneda / K Yamamoto / H Nakashima / D Wang et al. | 2017
- 104002
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Partial hybridisation of electron-hole states in an InAs/GaSb double quantum well heterostructureC S Knox / C Morrison / F Herling / D A Ritchie / O Newell / M Myronov / E H Linfield / C H Marrows et al. | 2017
- 104003
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A benchmark of co-flow and cyclic deposition/etch approaches for the selective epitaxial growth of tensile-strained Si:PJ M Hartmann / M Veillerot / B Prévitali et al. | 2017
- 104004
-
Piezotronic effect in 1D van der Waals solid of elemental tellurium nanobelt for smart adaptive electronicsShengjie Gao / Yixiu Wang / Ruoxing Wang / Wenzhuo Wu et al. | 2017
- 104005
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Photoluminescence of phosphorus atomic layer doped Ge grown on SiYuji Yamamoto / Li-Wei Nien / Giovanni Capellini / Michele Virgilio / Ioan Costina / Markus Andreas Schubert / Winfried Seifert / Ashwyn Srinivasan / Roger Loo / Giordano Scappucci et al. | 2017
- 104006
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Sensitivity enhanced FTIR investigation of defects introduced by RTA pre-treatment in Czochralski silicon wafersDawid Kot / Gudrun Kissinger / Andreas Sattler et al. | 2017
- 104007
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Low-voltage organic thin-film transistors based on solution-processed hybrid dielectrics: theoretical and experimental studiesQiutan Ke / Qian Wu / Lijuan Liang / Yanli Pei / Xubing Lu / Minmin Li / Kairong Huang / Xuying Liu / Chuan Liu et al. | 2017
- 104008
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Control of Ge1−x−ySixSny layer lattice constant for energy band alignment in Ge1−xSnx/Ge1−x−ySixSny heterostructuresMasahiro Fukuda / Kazuhiro Watanabe / Mitsuo Sakashita / Masashi Kurosawa / Osamu Nakatsuka / Shigeaki Zaima et al. | 2017
- 104009
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Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulationA Arvanitopoulos / N Lophitis / K N Gyftakis / S Perkins / M Antoniou et al. | 2017
- 104010
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Valence and conduction band edges of selenide and sulfide-based kesterites—a study by x-ray based spectroscopy and ab initio theoryTetiana Olar / Archana Manoharan / Claudia Draxl / Wolfram Calvet / Bünyamin Ümsur / Vladimir Parvan / Binoy Chacko / Haibing Xie / Edgardo Saucedo / Laura Elisa Valle-Rios et al. | 2017
- 105001
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Investigation of dielectric substrates on electrical and optical performance of wafer-scale graphene using non-contact methodsDong Wang / Jing Ning / Jincheng Zhang / Lixin Guo / Yue Hao et al. | 2017
- 105002
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Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS CapacitorsChong Wang / Eddy Simoen / Ming Zhao / Wei Li et al. | 2017
- 105003
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Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperatureIonel Stavarache / Valentin Adrian Maraloiu / Catalin Negrila / Petronela Prepelita / Ion Gruia / Gheorghe Iordache et al. | 2017
- 105004
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GaSe oxidation in air: from bulk to monolayersMahfujur Rahaman / Raul D Rodriguez / Manuel Monecke / Santos A Lopez-Rivera / Dietrich R T Zahn et al. | 2017
- 105005
-
Positive centre voltage in T-branch junctions on n-type GaAs/AlGaAs based on hydrodynamicsMichael Szelong / Arne Ludwig / Andreas Dirk Wieck / Ulrich Kunze et al. | 2017
- 105006
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A low-cost fabrication method for sub-millimeter wave GaAs Schottky diodeSarvenaz Jenabi / Dominic Deslandes / Francois Boone / Serge A Charlebois et al. | 2017
- 105007
-
TDDB modeling depending on interfacial conditions in magnetic tunnel junctionsChul-Min Choi / Hiroaki Sukegawa / Seiji Mitani / Yun-Heub Song et al. | 2017
- 105008
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Electron mobility in abrupt-interface and step-graded AlGaN/GaN HeterostructuresDongfeng Liu / Donghua Lin / Zhizhong Li / Kangxian Guo et al. | 2017
- 105009
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Improved reverse recovery characteristics of inAlN/GaN schottky barrier diode using a SOI substrateHsien-Chin Chiu / Li-Yi Peng / Hsiang-Chun Wang / Hsuan-Ling Kao / Hou-Yu Wang / Jen-Inn Chyi et al. | 2017
- 105010
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Employing hole-array recess of barrier layer of AlGaN/GaN Heterostructures to reduce annealing Temperature of Ohmic contactKefeng Han et al. | 2017
- 105011
-
Novel electronic properties of 2D MoS2/TiO2 van der Waals heterostructureYanhua Li / Congzhong Cai / Baoguang Sun / Jianjun Chen et al. | 2017
- 105012
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Simultaneous blue and green lasing of GaN-based vertical-cavity surface-emitting lasersR B Xu / Y Mei / B P Zhang / L Y Ying / Z W Zheng / W Hofmann / J P Liu / H Yang / M Li / J Zhang et al. | 2017
- 105013
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P–n junction diodes with polarization induced p-type graded InxGa1–xN layerYuuki Enatsu / Chirag Gupta / Stacia Keller / Shuji Nakamura / Umesh K Mishra et al. | 2017
- 109401
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Ion beam irradiation of nanostructures: sputtering, dopant incorporation, and dynamic annealingHenry Holland-Moritz / Andreas Johannes / Wolfhard Möller / Carsten Ronning et al. | 2017